CN101626000B - Metal array substrate, photoelectric element, light emitting element and manufacturing method thereof - Google Patents

Abstract

The present invention discloses a metal array substrate, a high thermal conductivity photoelectric element and a light-emitting element having the same, and a manufacturing method thereof. The metal array substrate comprises a plurality of metal unit substrates and a colloidal substance with an adhesive function located between the metal unit substrates. The high thermal conductivity photoelectric element comprises a metal unit substrate, a bonding layer located on the metal unit substrate, and an epitaxial structure located on the bonding layer.

Description

Metal array substrate, photoelectric element, light emitting element and manufacturing method thereof

technical field

The invention discloses a metal array substrate and a photoelectric element structure with high thermal conductivity formed thereon and its manufacturing method, in particular to a high thermal conductivity light-emitting diode structure and its manufacturing method.

Background technique

It is known that the aluminum oxide (sapphire) substrate carrying the blue light-emitting diode is a material with low thermal conductivity (the thermal conductivity is about 40W/mK). When operating under a high current condition, it cannot effectively transfer heat, causing heat accumulation and affecting the light-emitting diode. reliability.

At present, the whole piece of metal copper substrate with high thermal conductivity (the thermal conductivity is about 400W/mK) is connected to the light-emitting diode by electroplating or pasting, which can effectively transfer heat. However, after the growth substrate is removed, the internal stress compresses the entire metal copper substrate, causing the wafer to warp and affecting the subsequent process yield.

Contents of the invention

The invention provides a metal substrate structure with high thermal conductivity, which is a metal array substrate composed of a plurality of metal unit substrates and a colloid substance with adhesion function and located between the metal unit substrates.

The present invention provides a structure with a high thermal conductivity metal substrate consisting of copper, aluminum, nickel, gold and alloys thereof.

The present invention provides a metal substrate structure with high thermal conductivity, wherein the colloidal substance has insulation and high temperature resistance properties, such as a secondary curing liquid resin, which can be cured by UV irradiation or heating (<400°C) baking.

The invention provides a photoelectric element structure with high thermal conductivity, wherein the substrate is a metal array substrate.

The invention provides a structure of photoelectric elements with high thermal conductivity, wherein the substrate is a metal array substrate, which is composed of a plurality of metal unit substrates and each metal unit substrate has a colloid substance on the side.

The invention provides a structure of photoelectric elements with high thermal conductivity, wherein the substrate is a metal array substrate, which is composed of a plurality of metal unit substrates, and is bonded to the light-emitting diode structure by means of a bonding layer or electroplating.

The invention provides a photoelectric element structure with high thermal conductivity, wherein the substrate is a metal array substrate, which is composed of a plurality of metal unit substrates, and the area of each metal unit substrate can be equal or unequal.

The invention provides a structure of photoelectric elements with high thermal conductivity, wherein the substrate is a metal array substrate. Due to its high heat conduction efficiency, the photoelectric elements can be directly packaged without adding a submount.

The invention provides a structure of photoelectric elements with high thermal conductivity, which can be a vertical structure or a horizontal structure.

The invention discloses a light-emitting structure with a metal substrate with high thermal conductivity. The metal substrate is not pasted or electroplated on the light-emitting structure as a whole, but the metal unit substrate is bonded with a colloidal substance to form a metal array substrate. After the growth substrate is removed, there is no need to cut the metal substrate, and because the colloidal substance has the function of buffering stress, it can reduce the probability of chip warpage and improve the yield of subsequent processes.

Description of drawings

Figure 1 shows the appearance of the metal array substrate of the present invention;

2A-2H show the fabrication flow chart of the metal array substrate of the present invention;

Fig. 3-7 shows the photoelectric element fabrication flowchart of the embodiment of the present invention;

Fig. 8-12 shows the production flow diagram of the photoelectric element of another embodiment of the present invention;

4 and 13-19 show the fabrication flow chart of the photoelectric element according to another embodiment of the present invention.

[Description of main component symbols]

1～copper substrate

2～Photoresist

3～strip structure

4～Colloidal substance

5, 6a, 6b～Metal unit substrate

7a, 7b～electroplated nickel layer

8～electroplated copper layer

10, 20～metal array substrate

11～Joining layer

21 ~ growth substrate

22～Epitaxial structure

23 ~ the first electrical semiconductor layer

24～active layer

25～Second electrical semiconductor layer

26～Second electrical contact layer

27～reflective layer

28～The first electrical contact layer

29 ~ the first electrode

30～cutting lane

31～Temporary substrate

32～adhesive layer

33～Second electrode

34～film

100, 200, 300～LED die

Detailed ways

The invention discloses a metal array substrate, a photoelectric element structure with high thermal conductivity formed thereon and a manufacturing method thereof. In order to make the description of the present invention more detailed and complete, reference may be made to the following description together with FIGS. 1 to 19 .

Embodiment one

The photoelectric element of the present invention takes a light emitting diode as an example, and its structure and manufacturing method are shown in Figures 1-8. FIG. 1 is an appearance view of a metal array substrate used in the present invention. 2A to 2H are flow charts of the fabrication method of the metal array substrate used in the present invention. As shown in FIG. 2A, a metal substrate 1, such as a copper substrate, is adhered with an adhesive film 34 below it, and a layer of photoresist 2 is coated on its upper surface (as shown in FIG. 2B ), and then the yellow light development and etching process is used. A plurality of strip structures 3 are formed by etching on the metal substrate 1, wherein the distance between two adjacent strip structures depends on the design of the LED structure to be pasted thereafter (as shown in Figures 2C and 2D). Then fill the strip structure with colloidal substance 4 (as shown in Figure 2E, 2F), wherein the colloidal substance has insulation and high temperature resistance properties, such as a secondary hardening liquid resin, which can be baked by UV irradiation or heating (<400°C) And solidified. Finally, the photoresist is removed to form a high thermal conductivity metal array substrate 10 composed of a plurality of adjacent metal unit substrates 5 with the same area bonded by colloidal substances or a plurality of adjacent metal unit substrates with different areas. The high thermal conductivity metal array substrate 20 composed of 6a and 6b is shown in FIGS. 2G and 2H. The metal array substrates 10 and 20 may be composed of metals such as copper (Cu), aluminum (Al), nickel (Ni), gold (Au) or alloys thereof.

As shown in FIG. 3, a bonding layer 11 is formed on the metal array substrate 10, and its material can be metal materials such as silver, gold, aluminum, indium, or a spontaneous conductive polymer, or a polymer doped with aluminum, gold, etc. , platinum, zinc, silver, nickel, germanium, indium, tin, titanium, lead, copper, palladium or their alloys composed of conductive materials.

FIG. 4 shows a light-emitting structure, such as a light-emitting diode, including a growth substrate 21 made of gallium arsenide, silicon, silicon carbide, sapphire, indium phosphide, gallium phosphide, aluminum nitride, or gallium nitride. Next, an epitaxial structure 22 is formed on the growth substrate 21 . The epitaxial structure 22 is formed by an epitaxial process, such as metal organic vapor deposition epitaxy (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE). The epitaxial structure 22 includes at least a first electrical semiconductor layer 23, such as an n-type aluminum gallium indium phosphide (Al _x Ga _1-x ) _y In _1-y P layer or an n-type aluminum gallium indium nitride (Al _x Ga _1-x ) _y In _1-y N layer; the active layer 24 is, for example, aluminum gallium indium phosphide (Al _x Ga _1-x ) _y In _1-y P or aluminum gallium indium nitride (Al _x Ga _1-x ) a multiple quantum well structure formed by _y In _1-y N; and the second electrical semiconductor layer 25, for example, a p-type aluminum gallium indium phosphide (Al _x Ga _1-x ) _y In _1-y P layer or p type aluminum gallium indium nitride (Al _x Ga _1-x ) _y In _1-y N layer. In addition, the active layer 24 of this embodiment can be formed by stacking, for example, a homostructure, a single heterostructure, a double heterostructure, or a multiple quantum well structure.

Next, a second electrical contact layer 26 and a reflective layer 27 are formed on the epitaxial structure 22 . The material of the second electrical contact layer 26 can be indium tin oxide (Indium Tin Oxide), indium oxide (Indium Oxide), tin oxide (Tin Oxide), cadmium tin oxide (Cadmium Tin Oxide), zinc oxide (Zinc Oxide), Magnesium Oxide or Titanium Nitride, etc. The reflective layer 27 can be a metal material, such as aluminum, gold, platinum, zinc, silver, nickel, germanium, indium, tin and other metals or alloys thereof; it can also be made of a combination of metal and oxide, such as indium tin oxide/silver (ITO /Ag), indium tin oxide/alumina/silver (ITO/AlO _x /Ag), indium tin oxide/titanium oxide/silicon oxide (ITO/TiO _x /SiO _x ), titanium oxide/silicon oxide/aluminum (TiO _x /SiO _x /Al), indium tin oxide/silicon nitride/aluminum (ITO/SiN _x /Al), indium tin oxide/silicon nitride/silver (ITO/SiN _x /Ag), indium tin oxide/silicon nitride /aluminum oxide/aluminum (ITO/SiN _x /Al ₂ O ₃ /Al), or indium tin oxide/silicon nitride/aluminum oxide/silver (ITO/SiN _x /Al ₂ O ₃ /Ag), etc.

Next, as shown in FIG. 5 , the light emitting structure with the reflective layer 27 is bonded on the bonding layer 11 as shown in FIG. 3 , and the adhesive film is removed. Next, as shown in FIG. 6 , after the growth substrate 21 is removed by means of laser lift-off technology, etching process or chemical mechanical polishing process, the surface of the first electrical semiconductor layer 23 of the epitaxial structure 22 is exposed, and then the first electrical semiconductor layer 23 is formed thereon. An electrical contact layer 28 . The material of the first electrical contact layer 28 can be indium tin oxide (Indium Tin Oxide), indium oxide (Indium Oxide), tin oxide (Tin Oxide), cadmium tin oxide (Cadmium Tin Oxide), zinc oxide (Zinc Oxide), A thin film formed of magnesium oxide (Magnesium Oxide), titanium nitride (Titanium Nitride), germanium gold (Ge/Au) or germanium gold nickel (Ge/Au/Ni), and can be selectively formed on the film by etching process specific patterns. The first electrodes 29 are formed between the specific patterns of the first electrical contact layer 28 by means of thermal evaporation, electron beam evaporation (E-beam) or ion sputtering (Sputtering). If the first electrical contact layer 28 is a continuous film layer without a specific pattern, the first electrode 29 can be directly formed on the first electrical contact layer. In this embodiment, the metal array substrate 10 can be used as the second electrode. Then etch a plurality of dicing lines 30, and then cut the light-emitting diodes along the dicing lines into a plurality of light-emitting diode dies 100 having a metal unit substrate 5 with high thermal conductivity, as shown in FIG. .

Embodiment two

The flowchart of the manufacturing method of the metal array substrate in another embodiment of the present invention is the same as that in the first embodiment (FIG. 2A to FIG. 2H). The formed light-emitting structure takes a light-emitting diode as an example. The structure and manufacturing method are shown in Figures 8-12. Figure 8 includes a growth substrate 21 whose material can be gallium arsenide, silicon, silicon carbide, sapphire, indium phosphide , gallium phosphide, aluminum nitride or gallium nitride, etc. Next, an epitaxial structure 22 is formed on the growth substrate 21 . The epitaxial structure 22 is formed by an epitaxial process, such as metal organic vapor deposition epitaxy (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE). The epitaxial structure 22 includes at least a first electrical semiconductor layer 23, such as an n-type aluminum gallium indium phosphide (Al _x Ga _1-x ) _y In _1-y P layer or an n-type aluminum gallium indium nitride (Al _x Ga _1-x ) _y In _1-y N layer; the active layer 24 is, for example, aluminum gallium indium phosphide (Al _x Ga _1-x ) _y In _1-y P or aluminum gallium indium nitride (Al _x Ga _1-x ) a multiple quantum well structure formed by _y In _1-y N; and the second electrical semiconductor layer 25, for example, a p-type aluminum gallium indium phosphide (Al _x Ga _1-x ) _y In _1-y P layer or p type aluminum gallium indium nitride (Al _x Ga _1-x ) _y In _1-y N layer. In addition, the active layer 24 of this embodiment can be formed by stacking, for example, a homostructure, a single heterostructure, a double heterostructure, or a multiple quantum well structure. Next, a second electrical contact layer 26 is formed on the epitaxial structure 22, and its material can be Indium Tin Oxide, Indium Oxide, Tin Oxide, Cadmium Tin Oxide, Zinc oxide (Zinc Oxide), magnesium oxide (Magnesium Oxide) or titanium nitride (Titanium Nitride), etc.

Next, as shown in FIG. 9, the epitaxial structure having the second electrical contact layer 26 is bonded to the temporary substrate 31 through the adhesive layer 32, and then the growth substrate is removed by laser lift-off technology, etching process or chemical mechanical polishing process ( not shown).

Next, as shown in FIG. 10 , after the growth substrate 21 is removed, the surface of the first electrical semiconductor layer 23 of the epitaxial structure 22 is exposed, and then the first electrical contact layer 28 is formed thereon. The material of the first electrical contact layer 28 can be indium tin oxide (Indium Tin Oxide), indium oxide (Indium Oxide), tin oxide (Tin Oxide), cadmium tin oxide (Cadmium Tin Oxide), zinc oxide (Zinc Oxide), A thin film formed of magnesium oxide (Magnesium Oxide), titanium nitride (Titanium Nitride), germanium gold (Ge/Au) or germanium gold nickel (Ge/Au/Ni), and can be selectively formed on the film by etching process specific patterns. Next, the light-emitting diode is etched from the first electrical contact layer 28, the first electrical semiconductor layer 23, the active layer 24, and the second electrical semiconductor layer 25 from top to bottom to expose the second electrical contact layer 26, and then respectively The first electrode 29 is formed on the upper surface of the first electrical contact layer 28 , and the second electrode 33 is formed on the exposed surface of the second electrical contact layer 26 . The materials of the first electrode and the second electrode may be gold-tin alloy or gold-indium alloy. In this embodiment, the upper surface and/or the lower surface of the first electrical contact layer 28 and the exposed surface of the second electrical contact layer 26 may also be etched into a rough surface. Next, the chip is cut into element structure dies having the first electrodes 29 and the second electrodes 33 one by one, and these are adhered on the adhesive film 34 .

Next, as shown in FIG. 11, the die on the adhesive film is directly bonded to the high thermal conductivity metal array substrate 20 shown in FIG. 2H, so that the first electrodes 29 and the second electrodes 33 correspond to the adjacent metal The colloid substance on the unit substrates 6b, 6a and between the metal unit substrates 6b, 6a has the function of isolating the two electrodes. Then remove the upper and lower adhesive films 34 (not shown), the temporary substrate 31 and the adhesive layer 32 . If the temporary substrate 31 is a translucent substrate, it does not need to be removed. Next, the LED is cut along the dicing line into a plurality of flip-chip LED dies 200 having metal unit substrates with high thermal conductivity, as shown in FIG. 12 . The metal unit substrate is composed of two adjacent unit substrates 6a and 6b with different areas, the area of which is determined by the distance between the corresponding second electrode 33 and the first electrode 29, and colloidal substance 4 is provided on its side.

Embodiment Three

Still another embodiment of the present invention, its structure and manufacturing method are shown in Figures 13-19.

Figure 13 shows that taking the structure formed in Figure 4 as an example, the photoresist 2 is used to define the position of the cutting line on the reflective layer 27, and then an electroplating layer is formed as shown in Figure 14, such as electroplating nickel (7a )/copper (8)/nickel (7b) (thicknesses are 10-50 μm/50-100 μm/5-20 μm respectively), wherein the function of nickel is to relieve the internal stress of copper, and nickel alloy can be used instead. Then the photoresist is removed, that is, multiple cutting lines 30 are formed (as shown in FIG. 15 ). Then, the heat-resistant colloidal substance 4 is filled up the entire cutting line to form a metal array substrate with high thermal conductivity composed of a plurality of metal unit substrates bonded by the colloidal substance (as shown in FIG. 16 ). Then remove the growth substrate 21 (not shown), and then form the first electrical contact layer 28 on the first electrical semiconductor layer 23 , as shown in FIG. 17 . A first electrode 29 is formed on the first electrical contact layer, a second electrode 33 is formed on the surface of the electroplated nickel 7b, and multiple cutting lines 30 are formed by photolithography, as shown in FIG. 18 . Then use a laser or a diamond knife to cut the die, and cut the light emitting diode into a plurality of light emitting diode die 300 with metal unit substrates with high thermal conductivity, as shown in FIG. 19 .

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The scope of protection of the invention should be defined by the claims.

Claims (10)

1. a metal array basal plate, comprises:

Multiple metal unit substrates, wherein the area of the plurality of metal unit substrate can be equal to each other or be different;

Glued membrane is adhered to the plurality of metal unit substrate below; And

Colloidal substance, is positioned between the plurality of metal unit substrate to connect the plurality of metal unit substrate,

Wherein this colloidal substance is forever positioned at least two sides of each metal unit substrate, and this colloidal substance is to be positioned at continuously this at least two sides.

2. metal array basal plate as claimed in claim 1, wherein also has photoelectric cell on the plurality of metal unit substrate, and wherein this photoelectric cell can be light-emitting diode, laser diode, solar cell or optical detector etc.

3. a method of making metal array basal plate, comprises step:

Metal substrate is provided, and it has high-termal conductivity;

Adhesive film below this metal substrate;

Utilize the steps such as exposure, etching in this metal substrate, to form patterning; And

Filling colloidal substance is in this patterning, and wherein this colloidal substance can impose energy and solidified to connect multiple metal unit substrates,

Wherein this colloidal substance is forever positioned at least two sides of this each metal unit substrate, and this colloidal substance is to be positioned at continuously this at least two sides.

4. making has a method for the high thermal conductivity photoelectric cell of metal array basal plate, comprises step:

Growth substrate is provided;

Growth epitaxial structure is on this growth substrate, and wherein this epitaxial structure also comprises: the first electrical semiconductor layer; Active layer, on this first electrical semiconductor layer; And the second electrical semiconductor layer, on this active layer;

Form reflector on this epitaxial structure;

Form barrier layer on this reflector to define multiple patternings;

Electroplate the region that at least layer of metal layer is not covered by this barrier layer in this reflector;

Remove this barrier layer;

Filling colloidal substance with continuously around the plurality of patterning and impose energy and solidified, to form a metal array basal plate that forever comprises this colloidal substance;

Remove this growth substrate;

Form electrically connect structure on this epitaxial structure;

Between this epitaxial structure, form multiple Cutting Roads according to multiple patternings; And

Form this photoelectric cell along the plurality of Cutting Road cutting.

5. a tube core for light-emitting component, it can directly carry out encapsulation step and not need separately to add a support plate, comprises:

Metal unit substrate;

Colloidal substance is forever positioned at least two sides of this metal unit substrate, and wherein this colloidal substance can impose energy and solidified, and this colloidal substance is to be positioned at continuously this at least two sides;

Knitting layer is positioned on this metal unit substrate; And

Epitaxial structure is positioned on this knitting layer, and wherein this epitaxial structure at least comprises: the first electrical semiconductor layer; Active layer, on this first electrical semiconductor layer; And the second electrical semiconductor layer, on this active layer;

Wherein, the area of this metal unit substrate is close with this epitaxial structure area.

6. a tube core for light-emitting component, it can directly carry out encapsulation step and not need separately to add a support plate, comprises:

At least two adjacent metal cell substrates;

Colloidal substance is forever between these two adjacent metal cell substrates and be positioned at least two sides of each metal unit substrate, and this colloidal substance is to be positioned at continuously this at least two sides; And

Epitaxial structure is positioned on these at least two adjacent metal cell substrates, and wherein this epitaxial structure at least comprises: the first electrical semiconductor layer; Active layer, on this first electrical semiconductor layer; And the second electrical semiconductor layer, on this active layer;

And the area summation of these at least two adjacent metal cell substrates approximately equates with this epitaxial structure area.

7. a method of making light-emitting component, comprises:

Growth substrate is provided;

Form epitaxial structure on this growth substrate;

Metal array basal plate is provided, and its structure is formed by structure claimed in claim 1;

Provide knitting layer to engage this epitaxial structure and this metal array basal plate;

Remove this growth substrate;

Form multiple Cutting Roads on this epitaxial structure and this metal array basal plate; And

Form this light-emitting component along the plurality of Cutting Road cutting.

8. method as claimed in claim 7, wherein this light-emitting component can directly carry out encapsulation step and not need separately to add a support plate.

9. a method of making light-emitting component, comprises:

Growth substrate is provided;

Form epitaxial structure on this growth substrate;

Temporary base is provided;

Adhesion coating adhere this epitaxial structure and this temporary base are provided;

Remove this growth substrate;

Form electrically connect structure on this epitaxial structure;

Metal array basal plate is provided, and its structure is formed by structure claimed in claim 1;

Joint has this epitaxial structure and this metal array basal plate of this electrically connect structure;

Remove this temporary base;

Form multiple Cutting Roads on this epitaxial structure and this metal array basal plate; And

Form this light-emitting component along the plurality of Cutting Road cutting.

10. method as claimed in claim 9, wherein this light-emitting component can directly carry out encapsulation step and not need separately to add a support plate.