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CN101622707A - semiconductor module and inverter apparatus - Google Patents

semiconductor module and inverter apparatus Download PDF

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Publication number
CN101622707A
CN101622707A CN200880006025.5A CN200880006025A CN101622707A CN 101622707 A CN101622707 A CN 101622707A CN 200880006025 A CN200880006025 A CN 200880006025A CN 101622707 A CN101622707 A CN 101622707A
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China
Prior art keywords
substrate
mentioned
switch element
semiconductor module
pair
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Granted
Application number
CN200880006025.5A
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Chinese (zh)
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CN101622707B (en
Inventor
青木一雄
鹤冈纯司
安井诚二
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Aisin AW Co Ltd
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Aisin AW Co Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
    • H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

Provided is a semiconductor module having a structure capable of suppressing the thermal interference between switching elements on each pair of substrates on a base plate and appropriately cooling the switching elements on all of the substrates. Parallel flow generating means (8) for generating parallel flows of a refrigerant are arranged in refrigerant flow paths (7). Each substrate (3) has thereon the switching element (4) and a diode element (5) such that those elements are disposed in parallel in a direction (C) orthogonal to a direction (D) in which the refrigerant flows. On each substrate, the switching element (4) and a connection terminal area (6) are arranged in different positions in the refrigerant flowing direction (D). Each pair of the substrates (3) are disposed in series in the refrigerant flowing direction (D). In one substrate (3) of each pair, the switching element (4) is arranged on one side in the orthogonal direction (C), and in the other substrate (3), the diode element (5) is disposed on that same side in the orthogonal direction (C). In at least one substrate (3) of each pair, the connection terminal area (6) is disposed closer to the other substrate (3) than the switching element (4) on that substrate (3).

Description

Semiconductor module and DC-to-AC converter
Technical field
The present invention relates to possess base plate; Be positioned on the one side of this base plate, and possessed a plurality of substrates in switch element, diode element and splicing ear zone respectively; And be configured to the semiconductor module and the DC-to-AC converter of the coolant flow path that contacts with the another side of above-mentioned base plate.
Background technology
For example, in the inverter circuit of the motor that is used for driving the high-power output of being adopted as motor vehicle driven by mixed power, motor vehicle etc., possess the semiconductor module of the switch element that is used to constitute this inverter circuit, its caloric value is many, also is required miniaturization.Therefore, the cooling construction as semiconductor module adopts water-cooling pattern more.As the formation of the semiconductor module of such water-cooling pattern, disclosed formation shown in Figure 15 in for example following patent documentation 1.In this figure, be that vertical view, (b) are front view for end view, (c) (a).Semiconductor module 101 shown in this figure, possessed inner face formed striated fin 103 base plate 102 and be positioned in top 6 substrates 104 of this base plate 102.In addition, below base plate 102, not shown tank cover is configured to contact with the bottom surface (downside of the fin 103 among Figure 15 (b)) of fin 103, thus, has formed coolant flow path 105 respectively 103 of a plurality of fin.Therefore, on this semiconductor module 101, flow of coolant direction D becomes the length direction (left and right directions of Figure 15) of base plate 102.And, be positioned in 6 substrates 104 on the base plate 102, on flow of coolant direction D by configured in series.
In addition, on each substrate 104,2 IGBT (Insulated Gate Bipolar Transistor) element and diode element 107 have been disposed seriatim as switch element 106.In addition, disposed the splicing ear zone 108 of carrying out wire bonds with each substrate 104 in abutting connection with ground, this wire bonds is used for element 106,107 on each substrate 104 and not shown control basal plate electrical connection.And on this substrate 104,2 switch elements 106 and 2 diode elements 107 are replaced alignment arrangements singly on the vertical direction vertical with flow of coolant direction D.In addition, splicing ear zone 108, on flow of coolant direction D, be configured to a pair of substrate 104A, 104B the opposition side of an opposed side.
Patent documentation 1: TOHKEMY 2004-349324 communique (6-7 page or leaf, the 5th figure)
In the formation of above-mentioned semiconductor module shown in Figure 15,6 substrates 104 all are arranged in series on the flow of coolant direction D.Therefore, the identical cooling agent stream that is flowed in 103 formed each coolant flow path 105 of a plurality of fin has become the formation of cooling off a plurality of (at least 3) switch element 106 in turn.Therefore, exist the temperature of the cooling agent that flows through each coolant flow path 105 to rise gradually, the problem that the cooling performance of the switch element 106 in downstream reduces.
In addition, in the formation of above-mentioned semiconductor module shown in Figure 15, splicing ear zone 108 with respect to a pair of substrate 104A, 104B, is configured on flow of coolant direction D and this a pair of substrate 104A, the opposed side opposition side of 104B.Therefore, a pair of substrate 104A, 104B switch element 106 separately is not because opposed across splicing ear zone 108, is configured on each substrate 104 mutually apart from the closer position of the maximum switch element of heating 106.Thereby the heat that comes from these a plurality of switch element 106 conduction takes place hot the interference on base plate 102 easily, often makes the rising of the temperature part of base plate 102.There is the situation of the cooling performance reduction that is configured in this regional switch element 106 this moment in the high zone of the temperature of base plate 102.
Summary of the invention
The present invention makes in view of above-mentioned problem just, its purpose is to provide a kind of semiconductor module and DC-to-AC converter, it possesses the caused heat on base plate of heating that suppresses the switch element that a pair of substrate possessed separately interferes, and suitably cools off the formation of the switch element of whole substrates.
Semiconductor module of the present invention in order to achieve the above object possesses: base plate; Be positioned on the one side of this base plate, and possessed a plurality of substrates in switch element, diode element and splicing ear zone respectively; And be configured to the coolant flow path that contacts with the another side of above-mentioned base plate, the feature formation of this semiconductor module is, possess concurrent flow and form the unit, this concurrent flow forms the unit and be formed on the parallel cooling agent stream of prescribed direction in above-mentioned coolant flow path, the above-mentioned switch element of above-mentioned each substrate and above-mentioned diode element, alignment arrangements on the vertical direction vertical with above-mentioned flow of coolant direction, above-mentioned switch element is configured to different positions with above-mentioned splicing ear zone on above-mentioned flow of coolant direction, above-mentioned a plurality of substrate, use a pair of substrate of either party in the switch element with switch element and upper arm to have possessed a pair of underarm respectively, in above-mentioned flow of coolant direction configured in series, and on a substrate, side in above-mentioned vertical direction disposes above-mentioned diode element, side in above-mentioned vertical direction on another substrate disposes above-mentioned diode element, and the above-mentioned splicing ear area configurations of at least one substrate of above-mentioned a pair of substrate becomes than close another substrate-side of the above-mentioned switch element of this substrate.
Constitute according to this feature, be positioned in a plurality of substrates switch element and the diode element separately on the one side of base plate, arrangement is arranged in series in the formation on the vertical vertical direction of flow of coolant direction in the coolant flow path set on the another side with base plate, each switch element of a pair of substrate of flow of coolant direction configured in series be configured to mutually the vertical direction vertical with the flow of coolant direction hardly with the position.Thereby, when the parallel cooling agent stream in coolant flow path is observed, can constitute identical cooling agent and flow any one switch element that only cools off basically in a pair of substrate.Therefore, can distinguish the both sides' that suitably cool off a pair of substrate switch element.In other words, the upstream side that can be suppressed at the flow of coolant direction carries out the same coolant stream after the cooling of the switch element of a substrate, temperature are risen, and carries out the decline of cooling performance of switch element that formation produced, the downstream of cooling of the switch element of another substrate again in the downstream.Therefore, can suitably cool off the switch element of the whole substrates on the one side that is positioned in base plate.
In addition, according to this formation, use a pair of substrate of either party in the switch element with switch element and upper arm about having possessed a pair of underarm respectively, because the splicing ear area configurations of at least one substrate becomes switch element than this substrate near another substrate-side, so the both sides' of a pair of substrate switch element is regional and dispose across the splicing ear of at least one substrate on the flow of coolant direction.Therefore, the maximum switch element of heating in each substrate is configured in distant position.Therefore can suppress the caused heat on base plate of heating of the switch element that a pair of substrate possessed separately and interfere, can suitably cool off the switch element of whole substrates.
Here, preferred above-mentioned a pair of substrate has same formation mutually, and is configured to point symmetry.
By this formation, as described above, on the flow of coolant direction,, be configured in mutually on the same hardly position of the direction vertical, and can make these a pair of commonization of substrate with the flow of coolant direction by the switch element separately of a pair of substrate of configured in series.Therefore, on the flow of coolant direction by the switch element separately of a pair of substrate of configured in series, owing to be configured in mutually on the same hardly position of the direction vertical with the flow of coolant direction, so do not need to adopt the different multiple substrate of configuration of element etc., can suppress the rising of semiconductor module manufacturing cost.
In addition, the both sides' of preferred above-mentioned a pair of substrate above-mentioned splicing ear zone is configured to than close another substrate-side of the above-mentioned switch element of each substrate.
Constitute by this, 2 switch elements that a pair of substrate has separately are on the flow of coolant direction, be configured across the splicing ear zone of both sides' substrate at least.Thus, can on the position that is separated from each other between a pair of substrate, dispose the switch element of heating, suppress the heat that on base plate, produces that heat that the switch element by a pair of substrate transmits separately causes and interfere.Therefore, can suitably cool off the switch element of whole substrates.
In addition, preferred above-mentioned concurrent flow forms the unit, is a plurality of fin that the another side along base plate disposes in parallel to each other.
Constitute by this, can in coolant flow path, suitably form along the parallel cooling agent stream of a plurality of fin directions.In addition,, can widen the surface area of coolant flow path, the heat heat radiation that substrate is transmitted to base plate by a plurality of fin are set.
In addition, preferably the above-mentioned switch element to the aforesaid substrate that the downstream disposed of above-mentioned flow of coolant direction is provided with temperature detecting unit, adopt this temperature detecting unit to carry out temperature detection, this temperature detection is used for the temperature treatment of above-mentioned a pair of substrate both sides' switch element.
Constitute by this, can omit temperature detecting unit at the switch element of the substrate of the upstream side configuration of flow of coolant direction.Therefore, can simplify the formation of temperature detecting unit, reduce the manufacturing cost of semiconductor module.In addition, compare the upstream side of flow of coolant direction usually, the temperature height of downstream cooling agent is configured in the switch element of the substrate in downstream, becomes the possibility height of high temperature than the switch element of the substrate that is configured in upstream side.Therefore, even only utilize the temperature detection result of the switch element of the substrate be configured in the downstream to carry out temperature treatment, the temperature of switch element that is configured in the substrate of upstream side also can not surpass specified action and ensure temperature range, can not have problems.
In addition, preferably the above-mentioned underarm to ground connection is provided with temperature detecting unit with switch element, adopts this temperature detecting unit to carry out temperature detection, and this temperature detection is used for the temperature treatment of above-mentioned a pair of substrate both sides' switch element.
By this formation, can be that benchmark constitutes temperature detecting unit with the earth potential.Therefore, compare, can simplify formation, reduce the cost of manufacture of semiconductor module with the temperature detecting unit that with the power supply potential is benchmark.
In addition, preferred 6 substrates of mounting on the one side of above-mentioned base plate, these 6 substrates are as above-mentioned a plurality of substrates, possess respectively be used for constituting three-phase alternating current with each phase underarm of inverter circuit with switch element and upper arm either party with switch element.
Constitute by this,,, can constitute three-phase alternating current inverter circuit small-sized, light weight at an easy rate so utilize this semiconductor module because possessing of one is used to constitute whole switch elements of three-phase alternating current with inverter circuit on base plate.
In addition, preferably, constitute DC-to-AC converter by constituting the semiconductor module of above-mentioned three-phase alternating current with inverter circuit.
Description of drawings
Fig. 1 is the vertical view of formation of major part of the semiconductor module of expression first execution mode of the present invention.
Fig. 2 is the II-II sectional view of Fig. 1.
Fig. 3 is the III-III sectional view of Fig. 1.
Fig. 4 is the IV-IV sectional view of Fig. 2.
Fig. 5 is the cross-sectional perspective view of the semiconductor module of first execution mode of the present invention.
Fig. 6 is the wiring diagram of the inverter circuit of first execution mode of the present invention.
Fig. 7 is the vertical view of whole formations of the semiconductor module of expression first execution mode of the present invention.
Fig. 8 is the VIII-VIII sectional view of Fig. 7.
Fig. 9 is the vertical view of formation of major part of the semiconductor module of expression second execution mode of the present invention.
Figure 10 is the vertical view of formation of major part of the semiconductor module of expression the 3rd execution mode of the present invention.
Figure 11 is the vertical view of formation of major part of the semiconductor module of expression the 4th execution mode of the present invention.
Figure 12 is the vertical view of formation of major part of the semiconductor module of expression the 5th execution mode of the present invention.
Figure 13 be expression the present invention other execution modes, on the flow of coolant direction configured in series figure of example of different 2 semiconductor modules of caloric value.
Figure 14 is the figure of configuration example of 2 semiconductor modules of expression other execution modes of the present invention.
Figure 15 is the figure that the semiconductor module of the relevant background technology of expression constitutes.
Embodiment
1. first execution mode
Describe for first execution mode of the present invention with reference to the accompanying drawings.In the present embodiment, describe with the example in the semiconductor module 1 of the DC-to-AC converter of inverter circuit the present invention being useful in as constituting three-phase alternating current.Fig. 1～Fig. 8 is the figure of formation that is used to illustrate the semiconductor module 1 of present embodiment.Also have, in Fig. 1～Fig. 5, omit the formation of having represented beyond the substrate 3 of base plate more than 2.
As shown in these figures, this semiconductor module 1 possesses the cooling construction that comprises coolant flow path 7, and this cooling construction is used for switch elements 4 substrate 3 on the top 2A that is positioned in base plate 2, that particularly caloric value is maximum are cooled off.In addition, as shown in Figure 6, this semiconductor module 1, the inverter circuit 11 of the driving usefulness of formation three-phase alternating-current motor 31.Therefore, as shown in Figure 1, constitute 6 substrates 3 that to possess switch element 4 and diode element 5 respectively and be positioned on the top 2A of base plate 2.Also have, as shown in Figures 7 and 8, in this semiconductor module 1, to surround the mode mounting shell 41 of 6 substrates 3, support control basal plate 9 by this shell 41 on base plate 2, this control basal plate 9 is used to carry out the action control of the switch element 4 on each substrate 3 etc.Below, the formation of the each several part of this semiconductor module 1 is described in detail.
1-1. the cooling construction of substrate
At first, according to Fig. 1～Fig. 5, the cooling construction of the substrate in the semiconductor module 13 is described.As shown in Figure 1, this semiconductor module 1 possess base plate 2, in this coolant flow path 7 that 6 of mounting substrates 3 and being configured to contact with 2B below the base plate 2 on the 2A above base plate 2.Here, in coolant flow path 7, be provided with a plurality of fin 8 that form the unit as concurrent flow, be used to form at the parallel cooling agent stream of prescribed direction.As Fig. 2～shown in Figure 5, a plurality of fin 8 2B below base plate 2 is disposed in parallel to each other.Here, each fin 8 forms the tabular of specific thickness that the following 2B with respect to base plate 2 vertically sets up, carries out cut etc. by the following 2B to base plate 2 and forms with base plate 2.In addition, the interval of a plurality of fin 8 is almost certain, and the height of a plurality of fin 8 is also certain.By such fin 8 is set, be directed to the cooling agent stream in the coolant flow path 7, become the direction that concurrent flow forms the unit defined, promptly become along the concurrent flow of the direction PARALLEL FLOW of fin 8.In illustrated embodiment, 8 of a plurality of fin have formed the cooling agent stream that is parallel to each other.And as shown in Figure 1, the direction (among Fig. 1 from bottom to top direction) that is parallel to a plurality of fin 8 becomes flow of coolant direction D.In addition, the vertical direction of flow of coolant direction D becomes the vertical vertical direction C of relative flow of coolant direction (left and right directions among Fig. 1, following only be called " vertical direction C ") therewith.Also have, in the present embodiment, the top 2A of base plate 2 is equivalent to one side of the present invention, below 2B be equivalent to another side of the present invention.
As Fig. 2, Fig. 3 and shown in Figure 5, base plate 2 is formed parts 12 by the water route and supports.In addition, to cover the mode that the water route forms the bottom surface of parts 12, be provided with flat base plate parts 13.Here, water route formation parts 12 flat shapes are and base plate 2 shape much at one to have rectangular-shaped profile.Here, the water route forms parts 12, and its flat shape has formed and base plate 2 shape much at one, has the profile of cuboid.And the water route forms parts 12, has perisporium 12a that surrounds its periphery and butt board 12b and the divider wall parts 12c that is formed on the inboard of this perisporium 12a.And, be connected to the following 2B of base plate 2 above the perisporium 12a, be connected to base plate part 13 below the perisporium 12a.Butt board 12b is configured to the plate-like portion that contacts with the bottom surface (Fig. 2 and Fig. 3's is following) of fin 8.Therefore, by a plurality of fin 8 with by each space of a plurality of slender space of butt board 12b encirclement, form coolant flow path 7.Therefore, the cooling agent by flowing through in each of a plurality of coolant flow path 7 of being separated by a plurality of fin 8 has formed a plurality of parallel cooling agents streams.In addition, divider wall parts 12c is provided with along vertical direction C, is that the separated by spaces with the below of butt board 12b becomes 2 wall segment.Here, the space on the right side of the divider wall parts 12c among Fig. 3 and Fig. 5 becomes the inflow side cooling agent and accumulates the 14A of place, and the space in left side becomes the outflow side cooling agent and accumulates the 14B of place.
And the inflow side cooling agent accumulates the 14A of place, is communicated with coolant flow path 7 by inflow side restriction 15A, and the outflow side cooling agent accumulates the 14B of place, is communicated with coolant flow path 7 by outflow side restriction 15B.Inflow side restriction 15A and outflow side restriction 15B, the perisporium 12a and the gap between butt board 12b that form parts 12 by water constitute.As shown in Figure 4, inflow side restriction 15A and outflow side restriction 15B all form the peristome in the long slit-shaped of vertical direction C.In addition, the inflow side cooling agent accumulates the 14A of place, the outflow side cooling agent accumulates place 14B, inflow side restriction 15A and outflow side restriction 15B all has the length at vertical direction C identical with the integral width W of coolant flow path 7.
And cooling agent resembles and flows following.That is to say that as shown in Figure 4 the ejection pressure of cooling agent by not shown pump etc. flow into from flowing into road 16A, are admitted to the inflow side cooling agent and accumulate among the 14A of place.And, be full of this inflow side cooling agent and accumulated the cooling agent of locating 14A such as Fig. 3～shown in Figure 5, by inflow side restriction 15A, flow in the coolant flow path 7 of 8 of a plurality of fin.And by in the coolant flow path 7 time, cooling agent carries out heat exchange at base plate 2 and 8 of fin, carries out the cooling of the substrate 3 on the base plate 2.And, passed through the cooling agent of coolant flow path 7, via outflow side restriction 15B, be admitted to the outflow side cooling agent and accumulate among the 14B of place.Afterwards, be full of the outflow side cooling agent and accumulate the cooling agent of locating 14B, discharge by flowing out road 16B.According to above explanation, the flow of coolant direction D in the coolant flow path 7 becomes the direction that is parallel to a plurality of fin 8.In order to carry out heat exchange between base plate 2 and fin 8 and cooling agent effectively, base plate 2 and fin 8 preferably are made of the high metal of heat conductivity (for example copper etc.).Also have, in the present embodiment,, adopt the Xiang Shuizhong that is used to vehicle etc. to add the cooling fluid of ethylene glycol etc. as cooling agent.
1-2. the configuration of substrate constitutes
Below, according to Fig. 1 the configuration formation as the substrate 3 on the semiconductor module 1 of major part of the present invention is described.In the present embodiment, on the 2A, 6 substrates 3 are configured to arrange 2 rows on flow of coolant direction D on base plate 2, and arrange 3 rows on vertical direction C.And, by these 6 substrates 3, as described later, constitute inverter circuit 11.
Substrate 3 has underarm substrate 3A and upper arm substrate 3B, and this underarm constitutes the underarm 33 of inverter circuit 11 (with reference to Fig. 6) with substrate 3A, and possesses underarm switch element 4A; This upper arm constitutes upper arm 34 with substrate 3B, and possesses upper arm switch element 4B.Here, in 6 substrates 3, as underarm substrate 3A, dispose 3 substrates as upper arm substrate 3B with the upstream side (downside among Fig. 1) of flow of coolant direction D with 3 substrates of the downstream (upside among Fig. 1) of flow of coolant direction D configuration.And, 6 substrates 3, formation uses substrate 3A and upper arm to use substrate 3B as one group with the underarm of paired (a pair of) that upward quilt series connection of flow of coolant direction D (above-below direction of pressing among Fig. 1 is arranged) is disposed, and 3 group substrates 3 are arranged configuration on vertical direction C.Like this, a pair of substrate 3A, 3B are configured in respectively on upstream side and the downstream, and it is right also to become on cooling construction.Also have, for the notion of underarm and upper arm, the back describes according to Fig. 6.In addition, in the following description, when only claiming " substrate 3 ", think the general designation underarm with substrate 3A and upper arm substrate 3B, when only claiming " switch element 4 ", think general designation underarm switch element 4A and upper arm switch element 4B.
Each substrate 3 possesses a switch element 4, a diode element 5 and a splicing ear zone 6.Specifically, substrate 3 is provided with Copper Foil 10 on the upper and lower surface of the substrate body 21 that constitutes with insulated substrate, the not shown scolding tin of Copper Foil 10 usefulness of downside is fixed on the base plate 2, simultaneously on the Copper Foil 10 of upside, by not shown scolding tin floatless switch element 4 and diode element 5.That switch element 4 is concrete here is IGBT element (Insulated Gate Bipolar Transistor), and that diode element 5 is concrete is FWD element (Free Wheel Diode).Therefore, in substrate 3, the caloric value of switch element 4 is maximum.In addition, on the zone of the Copper Foil 10 that upside also is not set, splicing ear zone 6 is configured to directly be positioned on the substrate body 21.Also have, omit in Fig. 1, the lead pin 22 (with reference to Fig. 7 and Fig. 8) that is used to be electrically connected switch element 4 and control basal plate 9 is fixed on splicing ear zone 6 by scolding tin.In addition, on splicing ear zone 6, also be used to be electrically connected the wire bonds of switch element 4 and lead pin 22.
In addition, the switch element 4 on each substrate 3, diode element 5, and the configuration in splicing ear zone 6 as below carry out.That is to say that as shown in Figure 1, switch element 4 and diode element 5 are arranged configuration on vertical direction C (left and right directions among Fig. 1).In illustrated embodiment, switch element 4 has big slightly profile than diode element 5.And, the center of the flow of coolant direction D of diode element 5 is configured in respect to the center of the flow of coolant direction D of switch element 4 on the position that the side (leaving a side in splicing ear zone 6) of flow of coolant direction D staggers, and the edge of the side of the above-mentioned flow of coolant direction D of switch element 4 and diode element 5 becomes same linearity.Here, in example shown in Figure 1, " side of flow of coolant direction D " is meant the downstream (upside among Fig. 1) of flow of coolant direction D in underarm usefulness substrate 3A, the upstream side (downside among Fig. 1) of flow of coolant direction D in upper arm usefulness substrate 3B.In addition, switch element 4 and splicing ear zone 6 are configured in different positions on flow of coolant direction D.Concrete, splicing ear zone 6 is configured in position much at one with respect to switch element 4 on vertical direction C, promptly the opposite side with flow of coolant direction D disposes in abutting connection with ground.Here in example shown in Figure 1, " opposite side of flow of coolant direction D ", be meant the downstream (downside among Fig. 1) of flow of coolant direction D in underarm usefulness substrate 3A, the downstream (upside among Fig. 1) of flow of coolant direction D in upper arm usefulness substrate 3B.Cooperate the configuration of each such element etc., in illustrated embodiment, the substrate body 21 of each substrate 3 has formed and has had tabular in the long oblong plan shape of vertical direction C.
In addition, according to above-mentioned explanation, quilt series connection on flow of coolant direction D (above-below direction of pressing among Fig. 1 is arranged) a pair of underarm of configuration is used the relation of substrate 3B with substrate 3A and upper arm, promptly constitute in the relation of each a pair of substrate of organizing 3, the side deploy switch element 4 of vertical direction C on a substrate 3, the side of vertical direction C configuration diode element 5 on another substrate 3.Concrete, left side (left side among Fig. 1) the deploy switch element 4 of vertical direction C on underarm usefulness substrate 3A is at the right side (right side among Fig. 1) of vertical direction C configuration diode element 5.On the other hand, use among the substrate 3B at upper arm, opposite with underarm with substrate 3A, at the left side of vertical direction C configuration diode element 5, at the right side of vertical direction C deploy switch element 4.In the present embodiment, in order to realize satisfying a pair of underarm of relation substrate 3A and the upper arm configuration of substrate 3B like this, a pair of substrate 3A, 3B have same formation mutually, and substrate 3A, 3B that this is a pair of are configured to point symmetry.At this moment, with about flow of coolant direction D between a pair of substrate 3A, 3B and vertical direction C both sides' middle position as benchmark, make a pair of substrate 3A, 3B be configured to point symmetry.
For on flow of coolant direction D by a pair of substrate 3A, the 3B of configured in series, constitute by configuration as described above, underarm usefulness switch element 4A and the upper arm switch element 4B of a pair of substrate 3A, 3B, the configuration of on position same hardly on the vertical direction C, being staggered.Therefore, when flowing through a plurality of parallel cooling agent flow point in 8 formed a plurality of coolant flow path 7 of fin and not observing, flow through the same coolant stream in the coolant flow path 7, formed and only carried out upper arm is used either party's cooling among the switch element 4A with switch element 4B and underarm formation basically.Therefore, can distinguish switch element 4A, the 4B that suitably cools off a pair of substrate 3A, 3B both sides.In other words, same coolant stream after the upstream side that can be suppressed at flow of coolant direction D carries out upper arm temperature has risen with the cooling of switch element 4B carries out the reduction of the cooling performance of underarm usefulness switch element 4A that produced, the downstream in the formation of underarm with the cooling of switch element 4A again in the downstream.
In addition, in the present embodiment, a pair of substrate 3A, 3B both sides' splicing ear zone 6 is configured to switch element 4 close another substrate 3 sides than each substrate 3.Specifically, use among the substrate 3A at underarm, splicing ear zone 6 is configured to use switch element 4A near upper arm substrate 3B side than underarm.In addition, use among the substrate 3B at upper arm, splicing ear zone 6 is configured to use switch element 4B near underarm substrate 3A side than upper arm.Thus, underarm switch element 4A and upper arm switch element 4B, on flow of coolant direction D, clip a pair of substrate 3A, 3B both sides' splicing ear zone 6 and be configured, therefore can on the position of leaving mutually between a pair of substrate 3A, 3B, dispose switch element 4A, the 4B that generates heat most.Therefore, can suppress to interfere by the switch element 4A of a pair of substrate 3A, 3B, the caused heat on base plate 2 of heat that 4B transmits separately.
Also have, in the present embodiment, as mentioned above, splicing ear zone 6 be configured on the vertical direction C with switch element 4 position much at one on, so splicing ear zone 6 separately of a pair of substrate 3A, 3B, identical with a pair of substrate 3A, 3B switch element 4 separately, on a substrate 3, be configured in the side of vertical direction C, on another substrate 3, be configured on the opposite side of vertical direction C.Specifically, splicing ear zone 6 is used among the substrate 3A at underarm, is configured in the left side (left side among Fig. 1) of vertical direction C, uses among the substrate 3B at upper arm, is configured in the right side (right side among Fig. 1) of vertical direction C.By configuration splicing ear like this zone 6, use splicing ear zone 6 at the splicing ear zone 6 and the upper arm that on vertical direction C, alternately dispose underarm usefulness substrate 3A.Therefore as shown in Figure 7, many lead pins 22 that are fixed on the splicing ear zone 6 of each substrate 3 can easily be arranged in row on vertical direction C.Therefore can simplify the wiring pattern of control basal plate 9 described later, and make the welding sequence of lead pin 22 and control basal plate 9 easy.
1-3. the formation of inverter circuit
Below, the inverter circuit 11 that the semiconductor module 1 by present embodiment is constituted electric constitutes and describes.As shown in Figure 6, this inverter circuit 11 becomes the driving circuit of three-phase alternating-current motor 31.That is to say, this inverter circuit 11 possess corresponding respectively three-phase alternating-current motor 31 U phase coil 31u, V phase coil 31v, and W phase coil 31w (corresponding U phase, V phase, and each phase of W phase) U phase arm 32u, V phase arm 32v, and W phase arm 32w are set.And, these each mutually usefulness arm 32u, 32v, 32w, it constitutes to have respectively and can assist a pair of underarm 33 and the upper arm 34 that moves mutually.Here, underarm 33, it constitutes has underarm that the IGBT element forms with switch element 4A and the diode element 5 that is connected in parallel with emitter-inter-collector of switch element 4A at this underarm.Equally, upper arm 34, it constitutes has upper arm that the IGBT element forms with switch element 4B and the diode element 5 that is connected in parallel with emitter-inter-collector of switch element 4B at this upper arm.Here, diode element 5 its anodes are connected in the emitter of switch element 4A, 4B, and negative electrode is connected in the collector electrode of switch element 4A, 4B.
In addition, each is a pair of underarm 33 and the upper arm 34 of usefulness mutually, is the negative pole N side of ground connection according to underarm 33, and upper arm 34 is connected in series for the mode of the anodal P side of supply voltage.Specifically, underarm with the emitter of switch element 4A be connected in negative pole N, upper arm is connected in anodal P with the collector electrode of switch element 4B.That is to say that underarm becomes low side switch with switch element 4A, upper arm becomes high-side switch with switch element 4B.And underarm is with the collector electrode of switch element 4A and the upper arm emitter with switch element 4B, is connected respectively to and U phase coil 31u, the V phase coil 31v of each arm 32u, 32v, motor 31 that 32w is corresponding, and W phase coil 31w.
This inverter circuit 11, with the relation of each substrate 3 of semiconductor module 1 in, underarm has constituted underarm 32 with the underarm of substrate 3A with switch element 4A and diode element 5, and upper arm has constituted upper arm 33 with the upper arm of substrate 3B with switch element 4B and diode element 5.That is to say, 3 underarms that be configured in 6 substrates 3 on the base plate 2, the downstream (upside among Fig. 1) of flow of coolant direction D disposed constitute U phase arm 32u, V phase arm 32v, and the underarm 32 of W phase arm 32w respectively with substrate 3A, and 3 upper arm that the upstream side of flow of coolant direction D (downside among Fig. 1) is disposed constitute U phase arm 32u, V phase arm 32v respectively, reach the upper arm 33 of W phase arm 32w with substrate 3B.In addition, on base plate 2, a pair of (one group) underarm of quilt series connection on flow of coolant direction D (above-below direction of pressing among Fig. 1 is arranged) configuration constitutes U phase arm 32u, V phase arm 32v respectively, reaches either party among the W phase arm 32w with substrate 3A and upper arm substrate 3B.Therefore, for example a pair of substrate 3A, the 3B in vertical direction C left side (left side among Fig. 1) constitute U phase arm 32u, a pair of substrate 3A, the 3B of the central authorities of vertical direction C constitutes V phase arm 32v, and a pair of substrate 3A, the 3B on vertical direction C right side (right side among Fig. 1) constitutes W phase arm 32w.
1-4. the top of semiconductor module constitutes
Contrast base plate 2 describes near the top formation of the semiconductor module 1 of upside setting below.As shown in Figures 7 and 8, this semiconductor module 1, constitute as such top, have resin system shell 41 that is positioned on the base plate 2, is provided with in the mode of surrounding above-mentioned 6 substrates 3 and the control basal plate 9 that is supported on the top of 6 substrates 3 by this shell 41.
Here, shell 41 its flat shapes have rectangular-shaped, the rectangular-shaped profile more slightly larger slightly than base plate 2.This shell 41 forms accommodation spaces 42, is used to take in 6 substrates 3 that are configured on the base plate 2, and constitute have be enclosed in this accommodation space 42 around surrounding wall portion 41a.Also have, in accommodation space 42, the packing material of filling epoxy resin etc. is cured.Therefore, 6 substrates 3 that are configured on the final base plate 2 and shell 41 are by integrated.In addition, as shown in Figure 7, at shell 41 four jiaos are used to make shell 41 to be fixed on the connecting hole 43 of the bindiny mechanisms such as inserting bolt on the base plate 2 but be set up.
In addition, above the surrounding wall portion 41a, with 2 the faces formations of 41d above the highly different first top 41c and second.Here, 41c is the long rectangular surfaces on vertical direction C that is provided with respectively on the upstream side of flow of coolant direction D and downstream (upside of Fig. 7 and downside) above first.In addition, the second top 41d is the face than the low one-level of first 41c.Shell 41 first above on the 41c, be provided with as being configured in being used in the shell 41 and be electrically connected positive terminal 44a, negative terminal 44b and the lead-out terminal 44c of outside leading-out terminal of the not shown lead frame of each substrate 3.Here, each positive terminal 44a and negative terminal 44b all be set at Fig. 7 downside first above on the 41c, simultaneously 3 lead-out terminal 44c be set at Fig. 7 upside first above on the 41c.Positive terminal 44a is electrically connected on anodal P, and negative terminal 44b is electrically connected on negative pole N (with reference to Fig. 6).In addition, 3 lead-out terminal 44c are electrically connected on U phase coil 31u, V phase coil 31v and the W phase coil 31w (with reference to Fig. 6) of three-phase alternating-current motor 31 respectively.
Shell 41 second above 41d above, disposed control basal plate 9.Therefore, near a plurality of positions on second both sides of the edge of the vertical direction C of 41d, the not shown nut portions that the bolt 45 of the fixedly usefulness of formation and control basal plate 9 screws, by these a plurality of bolts 45, control basal plate 9 is fastened on the shell 41.In addition, control basal plate 9, by and second above the pad 46 of configuration between 41d top, being configured to relatively, these masks have certain intervals ground parallel.
In addition, a plurality of lead pins 22 by the splicing ear of each substrate 3 zone 6 is fixed connect control basal plate 9, are weldingly fixed on the top set not shown wiring diagram of control basal plate 9.In the present embodiment, for with a pair of substrate 3A, 2 groups that adjoin each other when 3B is one group, the lead pin 22 of one group underarm usefulness substrate 3A and the upper arm of another group are configured to form a line on flow of coolant direction D with the lead pin 22 of substrate 3B.Control basal plate 9 is the substrates that formed the control circuit that is used to drive inverter circuit 11, is made of the circuit block of real dress regulation on printed base plate.And this control basal plate 9 and be configured in 3 of a plurality of substrates on the base plate 2 is electrically connected by lead pin 22.
In addition, on this control basal plate 9 temperature sensing circuit 9a has been installed, the function of this temperature sensing circuit 9a performance temperature detecting unit is used to detect the temperature of the switch element 4 of each substrate 3.Here, temperature sensing circuit 9a for being set at not shown temperature detection on the switch element 4 by detection with the fixed computing of professional etiquette of going forward side by side of the voltage between the anode-cathode of diode, detects the computing circuit of the temperature of each switch element 4.In the present embodiment, in each switch element 4A, the 4B of a pair of substrate 3A, 3B, only to switch element 4A temperature sensing circuit 9a being set with the underarm of substrate 3A at the underarm of the downstream of flow of coolant direction D configuration.In other words, omit temperature sensing circuit 9a with the upper arm of substrate 3B with switch element 4B for the upper arm of the upstream side of flow of coolant direction D configuration.Therefore, this semiconductor module 1, become the underarm that disposes by downstream and carried out temperature detection, be used for a pair of substrate 3A, 3B both sides' switch element 4A, the temperature treatment of 4B with the set temperature sensing circuit 9a of switch element 4A to flow of coolant direction D.Also have, control basal plate 9, as the temperature treatment of switch element 4A, 4B, for example whether the temperature of monitoring switch element 4A, 4B is in specified action ensures temperature range, when surpassing this temperature range, carry out the control etc. of the action of shutdown switch element 4A, 4B.
Like this, by only the underarm of the downstream configuration of flow of coolant direction D is provided with the formation of temperature sensing circuit 9a with switch element 4A, with upper arm is compared with the situation that switch element 4B is provided with temperature sensing circuit 9a simultaneously, the number of temperature sensing circuit 9a is kept to half.In addition, usually, compare the upstream side of flow of coolant direction D, the temperature height of downstream cooling agent, the underarm that is configured in the downstream is bigger with the possibility that switch element 4B becomes high temperature than the upper arm that is configured in upstream side with switch element 4A.Therefore, even only utilize underarm to carry out temperature treatment with the temperature detection result of switch element 4A, upper arm also can not surpass specified action guarantee temperature range with the temperature of switch element 4B, can not have problems.Also have, in the present embodiment since with the element of the downstream configuration of flow of coolant direction D as underarm switch element 4A, so can simplify the formation of temperature sensing circuit 9a.That is to say, by making whole temperature sensing circuit 9a as the temperature detection usefulness of underarm with switch element 4A, each temperature sensing circuit 9a can become with negative pole N () current potential be the computing circuit of benchmark.Therefore, be that the temperature sensing circuit 9a of benchmark compares with current potential with anodal P, can simplify the formation of temperature sensing circuit 9a.Therefore, can seek the cost degradation of semiconductor module 1.
2. second execution mode
With reference to the accompanying drawings second execution mode of the present invention is described.Fig. 9 is the vertical view of formation of major part of the semiconductor module 1 of expression present embodiment.As shown in this figure, the semiconductor module 1 of present embodiment, it constitutes on a base plate 2, only one group of group that is made of with substrate 3B with substrate 3A and upper arm a pair of underarm of mounting.That is to say, the semiconductor module 1 of present embodiment, the number that is positioned in a substrate 3 on the base plate 2 is different with above-mentioned first execution mode.Also have, to the point that does not specify in the present embodiment, can be identical with the formation of above-mentioned first execution mode.
Therefore, in the semiconductor module 1 of present embodiment, compare with the semiconductor module 1 of above-mentioned first execution mode, in the narrowed width of the vertical direction C of base plate 2, the integral width W of coolant flow path 7 also narrows down in addition.In addition, though diagram is omitted, for the top formation of semiconductor module 1, shell 41 becomes the shape consistent with the shape of base plate 2, and control basal plate 9 becomes the formation that is suitable for controlling a pair of substrate 3A, 3B.This semiconductor module 1 is used in combination by 3, can constitute the inverter circuit 11 identical with above-mentioned first execution mode.In addition, when using this semiconductor module 1 separately, for example also can by with the combination of coil, electric capacity etc., constitute chopper circuit.Also having, though diagram is omitted, on a base plate 2 a pair of underarm is constituted semiconductor module 1 with substrate 3A and upper arm with 2 groups of group mountings or the mounting that substrate 3B constitutes more than 4 groups, also is one of preferred implementation of the present invention.For example, when constituting the inverter circuit that single phase alternating current (A.C.) uses etc., preferably on a base plate 2,2 groups of groups that constitute with substrate 3B with substrate 3A and upper arm by a pair of underarm of mounting.
3. the 3rd execution mode
With reference to the accompanying drawings the 3rd execution mode of the present invention is described.Figure 10 is the vertical view of formation of major part of the semiconductor module 1 of expression present embodiment.The semiconductor module 1 of present embodiment mainly is that the configuration of substrate 3 constitutes different with above-mentioned first and second execution mode.Here for the simplification of accompanying drawing etc., identical with above-mentioned second execution mode, adopted on a base plate 2 example that constitutes of the group that one group of mounting only is made of a pair of substrate 3A, 3B to describe, certainly identical with above-mentioned first execution mode, be applicable to that equally also with a pair of substrate 3A, 3B be one group, the formation of the many group substrates 3 of mounting on base plate 2.Also have, the point for not specifying in the present embodiment can adopt and above-mentioned first execution mode or the identical formation of second execution mode.
The semiconductor module 1 of present embodiment, upper arm is identical with above-mentioned first and second execution mode with the configuration in switch element 4, diode element 5 and splicing ear zone 6 among the substrate 3B, and underarm is different with above-mentioned first and second execution mode with the configuration in switch element 4, diode element 5 and splicing ear zone 6 among the substrate 3A.That is to say that in the present embodiment, use among the substrate 3A at underarm, switch element 4 is configured to than splicing ear zone 6 near upper arm substrate 3B sides.Therefore, in this semiconductor module 1,, be configured to than the switch element 4B of this substrate 3B near underarm with substrate 3A side only as the side's of a pair of substrate 3A, 3B upper arm splicing ear zone 6 with substrate 3B.Also have, for the diode element 5 of underarm with substrate 3A since with switch element 4 alignment arrangements on vertical direction C, so same with switch element 4, be configured to than splicing ear zone 6 near upper arm with substrate 3B sides.In addition, for switch element 4 on each substrate 3A, 3B and diode element 5 in the position of vertical direction C relation, become identical with above-mentioned first and second execution mode.
Therefore, in this semiconductor module 1, underarm is not same formation with substrate 3A and upper arm with substrate 3B, and underarm is mirror image switch with upper arm with substrate 3B with substrate 3A, and has changed the formation of the position relation of vertical direction C.And the configuration of the substrate 3 of the semiconductor module 1 of present embodiment constitutes, and the such underarm of mode configured in series that all is positioned at the upstream side of flow of coolant direction D with switch element 4 is realized with substrate 3B with substrate 3A and upper arm.
4. the 4th execution mode
The 4th execution mode to invention describes with reference to the accompanying drawings.Figure 11 is the vertical view of formation of major part of the semiconductor module 1 of present embodiment.The semiconductor module 1 of present embodiment, the configuration of substrate 3 constitutes different with above-mentioned first～the 3rd execution mode.Here for the simplification of accompanying drawing etc., identical with above-mentioned second execution mode, adopt on a base plate 2 mounting only the example that constitutes of one group of group that constitutes by a pair of substrate 3A, 3B describe.Certainly identical with above-mentioned first execution mode, be one group with a pair of substrate 3A, 3B, on base plate 2 mounting suitable too in the formation of many group substrates 3.Also have, the point to not specifying in the present embodiment can adopt and above-mentioned first execution mode or the identical formation of second execution mode.
The semiconductor module 1 of present embodiment, the underarm configuration in switch element 4, diode element 5 and splicing ear zone 6 among the substrate 3A, identical with above-mentioned first and second execution mode, upper arm is different with above-mentioned first and second execution mode with the configuration in switch element 4, diode element 5 and splicing ear zone 6 among the substrate 3B.That is to say that in the present embodiment, use among the substrate 3B at upper arm, switch element 4 is configured to than splicing ear zone 6 near underarms substrate 3A sides.Therefore, in this semiconductor module 1,, be configured to than the switch element 4A of this substrate 3A near upper arm with substrate 3B side as a pair of substrate 3A, 3B one side's underarm splicing ear zone 6 with substrate 3A.Also have, for the diode area 5 of upper arm with substrate 3B since with switch element 4 vertical direction C on alignment arrangements, so similarly be configured to than splicing ear zone 6 near underarms with substrate 3A sides with this switch element 4.In addition, for switch element 4 among each substrate 3A, 3B and diode element 5 in the position of vertical direction C relation, become identical with above-mentioned first and second execution mode.
Therefore, in this semiconductor module 1, underarm is not same formation with substrate 3A and upper arm with substrate 3B, and upper arm is the formation of mirror image switch and the position of having changed vertical direction C relation with substrate 3B with substrate 3A with underarm.And the configuration of the substrate 3 of the semiconductor module 1 of present embodiment constitutes, and is the mode that all is positioned at the upstream side of flow of coolant direction D with switch element 4, and the such underarm of configured in series is realized with substrate 3B with substrate 3A and upper arm.
The 5th execution mode
The 5th execution mode to invention describes with reference to the accompanying drawings.Figure 12 is the vertical view of formation of major part of the semiconductor module 1 of present embodiment.It is different with above-mentioned first～the 4th execution mode that the semiconductor module 1 of present embodiment mainly is that each substrate 3 respectively possesses two switch elements 4, two diode elements 5 and 6 aspects, two splicing ear zones.Here for the simplification of accompanying drawing etc., identical with above-mentioned second execution mode, adopt on a base plate 2 mounting only the example that constitutes of one group of group that constitutes by a pair of substrate 3A, 3B describe.Certainly identical with above-mentioned first execution mode, be one group with a pair of substrate 3A, 3B, on base plate 2 mounting suitable too in the formation of many group substrates 3.Also have, the point to not specifying in the present embodiment can adopt and above-mentioned first execution mode or the identical formation of second execution mode.
The semiconductor module 1 of present embodiment, as follows in the configuration in the switch element 4 on each substrate 3, diode element 5 and splicing ear zone 6: i.e. two switch elements 4 configured in series adjacent to each other on flow of coolant direction D.In addition, also configured in series adjacent to each other on flow of coolant direction D of two diode elements 5.And, these two switch elements 4 and two diode elements 5 alignment arrangements on vertical direction C.And these two switch elements 4 and two diode elements 5 dispose on the same Copper Foil 10.In illustrated embodiment, switch element 4 has the profile bigger slightly than diode element 5.And, diode element 5 be configured in the center of flow of coolant direction D with respect to switch element 4 in the center of flow of coolant direction D on the position of staggering of 5 opposite sides of 2 diode elements, the edge of 2 switch elements 4 and 2 diode element 5 mutual opposite sides becomes same linearity respectively.In addition, splicing ear zone 6, be configured to vertical direction C go up with 2 switch element 4 positions much at one on, clip these 2 switch elements 4 respectively in the both sides (upstream side and downstream) of flow of coolant direction D in abutting connection with configuration.
In addition, on flow of coolant direction D, used in substrate 3A and the relation of upper arm with substrate 3B by a pair of underarm of series connection (above-below direction of pressing among Figure 12 is arranged) configuration, at 2 switch elements 4 of side configuration of vertical direction C, the side at vertical direction C on another substrate 3 disposes 2 diode elements 5 on a substrate 3.Specifically, use among the substrate 3A at 2 switch elements 4 of the left side (left side among Figure 12) of vertical direction C configuration, at 2 diode elements 5 of the right side (right side among Figure 12) of vertical direction C configuration at underarm.On the other hand, use among the substrate 3B at upper arm, opposite with underarm with substrate 3A, at 2 diode elements 5 of the left side of vertical direction C configuration, at 2 switch elements 4 of the right side of vertical direction C configuration.Also have, splicing ear zone 6 is same with switch element 4, uses on the substrate 3A at underarm, is configured in the left side (left side among Figure 12) of vertical direction C, uses among the substrate 3B at upper arm, is configured in the right side of vertical direction C.In the present embodiment, use substrate 3A and upper arm with the configuration of substrate 3B, suppose that a pair of substrate 3A, 3B have same formation mutually, and substrate 3A, 3B that this is a pair of are configured to point symmetry in order to realize a pair of underarm that satisfies such relation.At this moment, as benchmark, make a pair of substrate 3A, 3B be configured to point symmetry flow of coolant direction D between relevant a pair of substrate 3A, 3B and vertical direction C both sides' middle position.
6. other execution modes
(1) under the situation that the semiconductor module 1 that has illustrated in a plurality of the respective embodiments described above is used in combination, when the caloric value of each semiconductor module 1 not simultaneously, preferably dispose in turn according to the mode of the big more semiconductor module 1 of caloric value the closer to the upstream side of flow of coolant direction D.Figure 13 represents that 2 semiconductor module 1A, 1B that caloric value is different are arranged in series in the example on the flow of coolant direction D.In this example, the formation of each semiconductor module 1 is identical with the formation of above-mentioned first execution mode.And, at the first semiconductor module 1A of the upstream side of flow of coolant direction D configuration, bigger than the second semiconductor module 1B caloric value of the downstream configuration of flow of coolant direction D.In this example, after cooling agent passes through the coolant flow path 7 of the first semiconductor module 1A along flow direction D, by the coolant flow path 7 of the second semiconductor module 1B.By such formation, can seek equilibrium along with the caloric value of the decline of the cooling performance that causes to the flowing of the downstream of flow direction D, cooling agent that temperature rises gradually and each semiconductor module 1.Also have, as the different situation of the caloric value of a plurality of like this semiconductor modules 1, for example become the inverter circuit 11 that is constituted by each semiconductor module 1 and drive constituting of the various different motor of exporting, have the dispar situation of the magnitude of current of the switch element 4 that flows through each semiconductor module 1.
(2) under the situation about using at semiconductor module 1 that combination has illustrated in a plurality of the respective embodiments described above, preferably the mode that is positioned near the side of other semiconductor modules 1 that adjoin each other according to the positive terminal 44a and the negative terminal 44b of 2 semiconductor modules 1 disposes 2 semiconductor modules 1.Figure 14 has represented the example of the configuration of such 2 semiconductor module 1A, 1B.In this example, the formation of each semiconductor module 1 is identical with the formation of above-mentioned first execution mode.And the first semiconductor module 1A of the downside of Figure 14 configuration is configured in the second semiconductor module 1B side of adjacency, and on the direction that positive terminal 44a and negative terminal 44b are positioned at.In addition, be configured in the second semiconductor module 1B of the upside of Figure 14, be configured in the first semiconductor module 1A side of adjacency, and on the direction that positive terminal 44a and negative terminal 44b are positioned at.By such configuration 2 semiconductor module 1A, 1B, as shown in figure 14, can make anodal bus bar 48A and the negative pole bus bar 48B of 2 semiconductor module 1A, 1B shared respectively, can also anodal bus bar 48A of configuration in parallel and negative pole bus bar 48B.And, by so anodal bus bar 48A of configuration in parallel and negative pole bus bar 48B, owing to flow through the influence of the co-current of anodal bus bar 48A and negative pole bus bar 48B respectively round about, can offset the magnetic field that produces of anodal bus bar 48A and negative pole bus bar 48B on every side, reduce the inductance of anodal bus bar 48A and negative pole bus bar 48B.
(3) in the respective embodiments described above, as cooling agent, adopting the situation of the cooling fluid of adding ethylene glycol etc. in the water is that example is illustrated, but the cooling agent among the present invention is not limited thereto.That is to say that semiconductor module 1 of the present invention can adopt the various cooling agents of known liquid or gas etc. aptly.
(4) in each above-mentioned execution mode, concrete example as the formation of " configured in series on flow of coolant direction D ", with the direction of the center that connects a plurality of elements or substrate, be configured to be illustrated with the parallel generally such example that constitutes of flow of coolant direction D.But the scope that is equivalent to the formation of " configured in series on flow of coolant direction D " is not limited thereto.That is to say, even connect the direction of the center of a plurality of elements or substrate, when being configured on the direction of reporting to the leadship after accomplishing a task with flow of coolant direction D, at least a portion at element or substrate is under the situation of the position relation that repeats mutually with vertical direction C, also be equivalent to the formation of " configured in series on flow of coolant direction D ", can become one of preferred implementation of the present invention.
(5) same in each above-mentioned execution mode, concrete example as the formation of " alignment arrangements on respect to the vertical direction C of flow of coolant direction D ", with the direction of the center that connects a plurality of elements or substrate, be configured to be illustrated with the such example that constitutes of vertical direction C almost parallel.But the scope that is equivalent to the formation of " alignment arrangements on vertical direction C " is not limited thereto.That is to say, even when connecting the direction of the center of a plurality of elements or substrate and being configured on the direction of reporting to the leadship after accomplishing a task with vertical direction C, as long as at least a portion of element or substrate is in when the position of repetition concerns mutually on the flow of coolant direction D, also be equivalent to the formation of " alignment arrangements on vertical direction C ", also can become one of preferred implementation of the present invention.
(6) in the respective embodiments described above, form the unit as concurrent flow, the example that a plurality of parallel fin 8 are set on the following 2B to base plate 2 is illustrated.But concurrent flow forms the concrete formation of unit and is not limited thereto.Therefore, for example forming a plurality of parallel fin 8 on parts 12 sides forming with the water route of the not consubstantiality of base plate 2, be connected to the formation of base plate 2 above each fin 8, also is one of preferred implementation of the present invention.In addition, also can at random determine for the number of fin 8, interval etc.In addition, also can constitute concurrent flow and form the unit by the parts beyond the fin 8.For example, also can equally also can form the parallel cooling agent stream of prescribed direction by elongated a plurality of through holes set on the base plate 2, groove etc., this moment, these through holes, groove etc. were concurrent flow formation unit.
(7) in addition, the front end of preferred fin 8 is the formation with predetermined gap for opposed plate-shaped member.That is to say, in each above-mentioned execution mode, form the bottom surface (Fig. 2 and Fig. 3's is following) of the fin 8 of unit as concurrent flow, forming the situation that the butt board 12b of parts 12 is provided with like that with water route in succession is that example is illustrated, the bottom surface of preferred fin 8 for the butt board for having the formation of specified gap.Equally, when forming parts 12 sides formation fin 8 in the water route, the top of preferred fin 8 is the formation with predetermined gap concerning the following 2B of base plate 2.
(8) in addition, in the respective embodiments described above, the example that the parallel cooling agent stream that forms unit formation by concurrent flow is respectively linearity is illustrated.But, form the parallel cooling agent stream that the unit forms by concurrent flow, be not defined as linearity, also can have the curve-like of bend such as waveform, this also is one of preferred implementation of the present invention.This kind situation is when for example concurrent flow forms the unit and is fin 8, and each fin 8 is formed crooked curve-likes such as waveform in vertical view.
(9) in the respective embodiments described above, to having possessed the underarm substrate 3A of underarm with switch element 4A, the example when being configured to than upper arm with the downstream of the close flow of coolant direction D of substrate 3B is illustrated.But, underarm is configured to than the formation of upper arm with the upstream side of the close flow of coolant direction D of substrate 3B with substrate 3A, also be one of preferred implementation of the present invention.In such cases, consider the reliability of temperature treatment, omit, with switch element 4B temperature sensing circuit 9a is set and the downstream at flow of coolant direction D is provided with the upper arm that is configured for the temperature sensing circuit 9a of underarm with switch element 4A.But, do not get rid of upper arm switch element 4B omission temperature sensing circuit 9a, and the underarm that the upstream side at flow of coolant direction D disposes is provided with the formation of temperature sensing circuit 9a with switch element 4A the downstream configuration of flow of coolant direction D.In addition, also can be formed on underarm all is provided with temperature sensing circuit 9a with the both sides of switch element 4B with switch element 4A and upper arm formation.
(10) in each above-mentioned execution mode, the example that constitutes that the following 2B that has been configured a plurality of substrates 3, base plate 2 with the top 2A of base plate 2 has been set up coolant flow path 7 is illustrated, but embodiments of the present invention are not limited thereto.That is to say that the configuration direction of base plate 2 is arbitrarily, with the face that disposed a plurality of substrates 3 for down to or side direction also be one of preferred implementation of the present invention.
(11) in above-mentioned first, second and the 5th execution mode, a pair of substrate 3A, 3B are had identical example when constituting mutually be illustrated.But, for realizing the configuration of a pair of substrate 3A as described above, 3B, may not need a pair of substrate 3A, 3B to have identical formation, at least identical the getting final product of configuration in the switch element 4 of each substrate 3, diode element 5 and splicing ear zone 6.Therefore, underarm substrate 3A and upper arm substrate 3B, the configuration in its switch element 4, diode element 5 and splicing ear zone 6 can be identical, also can be other different formations, substrate 3A, 3B are configured to point-symmetric formation, also are one of preferred implementations of the present invention.
(12) in each above-mentioned execution mode, the example when semiconductor module 1 is applicable to inverter circuit 11, chopper circuit is main being illustrated.But the scope of application of the present invention is not limited thereto, and also can suitably be used in the various semiconductor modules 1 of the suitable cooling that needs switch element 4.
The present invention can suitably utilize is possessing base plate; Be positioned in a plurality of substrates that possessed switch element, diode element and splicing ear zone on the one side of this base plate, respectively; And be configured in the semiconductor module of the coolant flow path that contacts with the another side of above-mentioned base plate.

Claims (8)

1, a kind of semiconductor module possesses: base plate; Be positioned on the one side of this base plate, and possessed a plurality of substrates in switch element, diode element and splicing ear zone respectively; And be configured to the coolant flow path that contacts with the another side of above-mentioned base plate,
And possess concurrent flow formation unit, this concurrent flow forms unit and be formed on the parallel cooling agent stream of prescribed direction in above-mentioned coolant flow path,
The above-mentioned switch element of above-mentioned each substrate and above-mentioned diode element alignment arrangements on the vertical direction vertical with above-mentioned flow of coolant direction, and above-mentioned switch element is configured in different positions with above-mentioned splicing ear zone on above-mentioned flow of coolant direction
Above-mentioned a plurality of substrate, possessed a pair of underarm respectively and used a pair of substrate of either party in the switch element with switch element and upper arm, configured in series on above-mentioned flow of coolant direction, and the side in above-mentioned vertical direction on a substrate disposes above-mentioned switch element, side in above-mentioned vertical direction on another substrate disposes above-mentioned diode element
The above-mentioned splicing ear area configurations of at least one substrate of above-mentioned a pair of substrate becomes than close another substrate-side of the above-mentioned switch element of this substrate.
2, semiconductor module according to claim 1 is characterized in that,
Above-mentioned a pair of substrate has identical formation mutually, is configured to point symmetry.
3, semiconductor module according to claim 1 and 2 is characterized in that,
The both sides' of above-mentioned a pair of substrate above-mentioned splicing ear zone is configured to than close another substrate-side of the above-mentioned switch element of each substrate.
4, according to each described semiconductor module in the claim 1～3, it is characterized in that,
Above-mentioned concurrent flow forms the unit, is a plurality of fin that the another side along base plate disposes in parallel to each other.
5, according to each described semiconductor module in the claim 1～4, it is characterized in that,
Above-mentioned switch element at the aforesaid substrate that the downstream disposed of above-mentioned flow of coolant direction is provided with temperature detecting unit, adopt this temperature detecting unit to carry out temperature detection, this temperature detection is used for the temperature treatment of above-mentioned a pair of substrate both sides' switch element.
6, according to each described semiconductor module in the claim 1～5, it is characterized in that,
Above-mentioned underarm to ground connection is provided with temperature detecting unit with switch element, adopts this temperature detecting unit to carry out temperature detection, and this temperature detection is used for the temperature treatment of above-mentioned a pair of substrate both sides' switch element.
7, according to each described semiconductor module in the claim 1～7, it is characterized in that,
6 substrates of mounting on the one side of above-mentioned base plate, these 6 substrates are as above-mentioned a plurality of substrates, possess respectively be used for constituting three-phase alternating current with each phase underarm of inverter circuit with switch element and upper arm either party with switch element.
8, a kind of DC-to-AC converter possesses the described semiconductor module of claim 7.
CN200880006025.5A 2007-05-22 2008-02-15 Semiconductor module and inverter apparatus Expired - Fee Related CN101622707B (en)

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