CN101621027B - A Method of Adjusting Varactor Diode Characteristics Using Partial Secondary Doping Process - Google Patents
A Method of Adjusting Varactor Diode Characteristics Using Partial Secondary Doping Process Download PDFInfo
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- CN101621027B CN101621027B CN2008101160445A CN200810116044A CN101621027B CN 101621027 B CN101621027 B CN 101621027B CN 2008101160445 A CN2008101160445 A CN 2008101160445A CN 200810116044 A CN200810116044 A CN 200810116044A CN 101621027 B CN101621027 B CN 101621027B
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 230000008569 process Effects 0.000 title claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 12
- 238000005468 ion implantation Methods 0.000 claims abstract description 11
- 238000001465 metallisation Methods 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 3
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- 239000004065 semiconductor Substances 0.000 abstract description 10
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- 108090000723 Insulin-Like Growth Factor I Proteins 0.000 description 1
- 102000013275 Somatomedins Human genes 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
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Abstract
The invention discloses a method for adjusting the characteristics of a variable capacitance diode by adopting a local secondary doping process, which comprises the following steps: selecting a B-C junction of HBT material to manufacture a variable capacitance diode, and utilizing the high doping characteristic of a base layer material in the HBT to enable contact metal to form ohmic contact without a high-temperature metallization process or a rapid metallization process; the method comprises the steps of adopting a high-temperature-resistant and repeatedly-thickened mask layer to protect a region which does not need secondary doping, utilizing ion implantation equipment to carry out secondary doping on doping elements in a varactor material region, adjusting doping components in the varactor material region to be in a state suitable for manufacturing a hyper-abrupt junction of a varactor, and simultaneously enabling the region which does not need secondary doping not to be affected by the secondary doping. The invention carries out secondary doping on the diode device material area with optimized performance and simultaneously protects the characteristics of other areas of the circuit, so that the same semiconductor material can meet the requirements of other devices and simultaneously can manufacture a high-quality variable capacitance diode.
Description
Technical field
The present invention relates to semiconductor device and ic manufacturing technology field, relate in particular to a kind of method that adopts local secondary doping process to adjust characteristics of variable capacitance diode.
Background technology
In the modern semiconductors circuit technology, heterojunction bipolar transistor (HBT) technology is applied in the microwave integrated circuit, for the microwave integrated circuit that has tuber function usually with its high frequency characteristics, as the monolithic voltage controlled oscillator, variable capacitance diode is its core tuning device.Linearity variable capacitance diode good, that control is sensitive need surpass the junction characteristic of sudden change.For the integrated circuit that has tuber function of routine,, need on a slice substrate, make transistor 101, variable capacitance diode 102, transmission line and multiple devices such as interconnection line 103, passive device 104 with built-up circuit as schematic diagram 1.Will satisfy other device requirement simultaneously owing to make the conventional semi-conducting material that monolithic integrated circuit provided, its material behavior also not exclusively is suitable for making high performance variable capacitance diode.Way at present commonly used is in the limitation scope of current material, selects wherein preferably that a knot is used, and makes variable capacitance diode, and resulting device property can not reach optimization.
It is the processes well known that semi-conducting material mixes that ion injects, its operation principle such as schematic diagram 2, by ion source and accelerator 201, under the vacuum condition that target chamber 202 is provided with doping component particle 204 to be injected into the position of certain depth in the semi-conducting material 203, this makes its secondary that can be used for doping content regulate, and reaches the purpose of regulating material behavior.Ion injects can be by the blocking-up of mask materials such as metal, photoresist, and the secondary diffusion at high temperature can take place the ion of injection.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of method that adopts local secondary doping process to adjust characteristics of variable capacitance diode, with in the monolithic integrated circuit manufacture craft, the variable capacitance diode material area is adjusted to the dopant states that is suitable for making variable capacitance diode, make same chip semiconductor material when satisfying other device requirement, can make high-quality variable capacitance diode, obtain high performance monolithic tuning circuit module.
(2) technical scheme
For achieving the above object, technical scheme provided by the invention is as follows:
A kind of method that adopts local secondary doping process to adjust characteristics of variable capacitance diode, this method comprises:
Select base stage-collector electrode (Base-Collector of HBT material, B-C) knot is made variable capacitance diode, utilize the highly doped feature of base layer material among the HBT, make contacting metal can form ohmic contact without the high-temperature metal metallization processes or by quick metallization process;
Adopt mask layer protection high temperature resistant and repeatedly thickening to need not the zone of secondary doping; utilize ion implantation device that the variable capacitance diode material area is carried out the doped chemical secondary doping; adjust variable capacitance diode material area doping component to the super abrupt junction state that is suitable for making variable capacitance diode, make the zone that need not secondary doping not be subjected to the influence of this secondary doping simultaneously.
In the such scheme; the mask layer protection that described employing is high temperature resistant and repeatedly thicken need not the zone of secondary doping; utilizing ion implantation device that the variable capacitance diode material area is carried out the step of doped chemical secondary doping, is to carry out after meeting causes the processing step of secondary diffusion.
In the such scheme, described meeting causes that the processing step of secondary diffusion comprises at least: high temperature alloy metallization processes, high-temperature medium material growth technique and high-temperature baking technology.
In the such scheme, this method zone that mask layer protection high temperature resistant and repeatedly thickening need not secondary doping in described employing, utilize ion implantation device the variable capacitance diode material area to be carried out further comprise after the step of doped chemical secondary doping:
Execution is difficult for causing base stage (Base) the layer material contact for producing and the passivation technology step of secondary diffusion.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
This employing local secondary doping process provided by the invention is adjusted the method for characteristics of variable capacitance diode; the diode component material area of need being optimized performance carries out secondary doping; while other regional characteristics of protective circuit; make at same chip semiconductor material and can when satisfying other device requirement, can make high-quality variable capacitance diode.The present invention can be used for the semiconductor technology of HBT, makes the monolithic integrated circuit module of high performance band tuber function.
Description of drawings
Fig. 1 is the schematic diagram that contains multiple device in the monolithic integrated circuit;
Fig. 2 is an ion implantation device operation principle schematic diagram;
Fig. 3 is the process chart according to optimization of the present invention;
Fig. 4 injects the process chart of making variable capacitance diode according to the invention process secondary.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
This employing local secondary doping process provided by the invention is adjusted the method for characteristics of variable capacitance diode, specifically may further comprise the steps:
Select base stage-collector electrode (Base-Collector of HBT material, B-C) knot is made variable capacitance diode, utilize the highly doped feature of base layer material among the HBT, make contacting metal can form ohmic contact without the high-temperature metal metallization processes or by quick metallization process;
Adopt mask layer protection high temperature resistant and repeatedly thickening to need not the zone of secondary doping; utilize ion implantation device that the variable capacitance diode material area is carried out the doped chemical secondary doping; adjust variable capacitance diode material area doping component to the super abrupt junction state that is suitable for making variable capacitance diode, make the zone that need not secondary doping not be subjected to the influence of this secondary doping simultaneously.
The mask layer protection that above-mentioned employing is high temperature resistant and repeatedly thicken need not the zone of secondary doping; utilizing ion implantation device that the variable capacitance diode material area is carried out the step of doped chemical secondary doping, is to carry out after meeting causes the processing step of secondary diffusion.
Above-mentioned meeting causes that the processing step of secondary diffusion comprises at least: high temperature alloy metallization processes, high-temperature medium material growth technique and high-temperature baking technology.
Mask layer protection high temperature resistant and repeatedly thickening need not the zone of secondary doping to this method in described employing; utilize ion implantation device the variable capacitance diode material area to be carried out further comprise after the step of doped chemical secondary doping: to carry out steps such as base stage (Base) the layer material contact for producing be difficult for causing the secondary diffusion and passivation technology.
According to the above-mentioned description of this invention, divide 2 steps to be elaborated below in conjunction with specific embodiment:
The making of step 1: HBT, as shown in Figure 3; This step can be divided into following each substep again:
Step 301: growth emitter metal contact layer;
Step 302: corrosion emitter material layer;
Step 303: growth HBT base metal contact layer, different with the processes well known flow process, the diode base layer contact layer of not growing this moment;
Step 304: corrosion base material layer keeps the diode area base material;
Step 305: corrosion collector material layer keeps HBT and diode area collector material;
Step 306: growth collector electrode metal contact layer forms wiring and passive device metal level simultaneously;
Step 307 is to step 308: somatomedin, the etching medium, growth multilayer wiring and passive device metal level, metallization and annealing process, form the device state as Fig. 4 (a): except that variable capacitance diode 4020, transistor 401, transmission line and interconnection line 403, passive device 404 etc. have all been finished processing.
Step 2: secondary doping, make the variable capacitance diode of optimizing, as schematic diagram 4; This step can be divided into following each substep again:
Step 411: mask protection is carried out in non-variable capacitance diode zone, wherein directly the mask material of contact semiconductor device needs high temperature resistant and is easy to remove, its thickness need reach realizes enough masking effects, bottom adopts the high temperature resistant photoresist spin coating of PMMA, and adopts thick film photolithography glue secondary or repeatedly cover spin coating and realize thickening; Adopt ion implantor that doping component is injected the interface, make material be converted into super abrupt junction, realize the target of secondary doping.
In this secondary doping process, required doping composition is injected into the diode material interface according to required dosage and energy, reaches the required material super abrupt junction of high-performance transfiguration diode characteristic.Dosage that its intermediate ion injects and energy are determined according to the material characteristics of required adjusting.And adopt resistant to elevated temperatures mask layer, integrated circuit is removed extra-regional other zones of required secondary doping protect, make its characteristic not be subjected to the influence of secondary doping process.Mask material must be able to bear the secondary doping process ambient temperature and effectively isolate ion and inject.
Step 412: growth variable capacitance diode base material contact metal layer.
Step 413: technological process is finished, and forms the integrated circuit that multiple device such as transistor 401, variable capacitance diode 402, transmission line and interconnection line 403, the passive device 404 etc. illustrated as Fig. 4 (d) constitutes.Wherein variable capacitance diode 402 is to carry out device after secondary doping is optimized by method of the present invention.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
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| CN117199145B (en) * | 2023-09-18 | 2024-05-07 | 扬州国宇电子有限公司 | High-capacitance-ratio super-abrupt variable-capacitance diode and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6787882B2 (en) * | 2002-10-02 | 2004-09-07 | The United States Of America As Represented By The Secretary Of The Navy | Semiconductor varactor diode with doped heterojunction |
| CN1695293A (en) * | 2002-09-13 | 2005-11-09 | Tlc精密晶片技术公司 | Integrated circuit oscillator |
| CN1959985A (en) * | 2005-11-02 | 2007-05-09 | 国际商业机器公司 | Semiconductor structure and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1695293A (en) * | 2002-09-13 | 2005-11-09 | Tlc精密晶片技术公司 | Integrated circuit oscillator |
| US6787882B2 (en) * | 2002-10-02 | 2004-09-07 | The United States Of America As Represented By The Secretary Of The Navy | Semiconductor varactor diode with doped heterojunction |
| CN1959985A (en) * | 2005-11-02 | 2007-05-09 | 国际商业机器公司 | Semiconductor structure and manufacturing method thereof |
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