CN101587134A - Probe of vertical probe card - Google Patents
Probe of vertical probe card Download PDFInfo
- Publication number
- CN101587134A CN101587134A CN200810098449.0A CN200810098449A CN101587134A CN 101587134 A CN101587134 A CN 101587134A CN 200810098449 A CN200810098449 A CN 200810098449A CN 101587134 A CN101587134 A CN 101587134A
- Authority
- CN
- China
- Prior art keywords
- probe
- carb
- vertical
- coating
- vertical probe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 title claims abstract description 145
- 239000002861 polymer material Substances 0.000 claims abstract description 5
- 239000002103 nanocoating Substances 0.000 claims description 27
- 229920001940 conductive polymer Polymers 0.000 claims description 21
- 239000002322 conducting polymer Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 11
- 239000007769 metal material Substances 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 claims description 3
- 229920000767 polyaniline Polymers 0.000 claims description 3
- 229920000128 polypyrrole Polymers 0.000 claims description 3
- 229920000123 polythiophene Polymers 0.000 claims description 3
- DECCZIUVGMLHKQ-UHFFFAOYSA-N rhenium tungsten Chemical group [W].[Re] DECCZIUVGMLHKQ-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052790 beryllium Inorganic materials 0.000 claims description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000012360 testing method Methods 0.000 abstract description 20
- 238000009501 film coating Methods 0.000 abstract description 5
- 239000007888 film coating Substances 0.000 abstract description 4
- 238000004140 cleaning Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000002120 nanofilm Substances 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000003989 dielectric material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- -1 Polyparaphenylene Polymers 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000036244 malformation Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
- G01R1/06755—Material aspects
- G01R1/06761—Material aspects related to layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Measuring Leads Or Probes (AREA)
Abstract
The invention discloses a probe of a vertical probe card. The technical means of the invention is mainly to plate a high-conductivity polymer material with the thickness of 1-20 nanometers of a nanometer coating film on the surface of about 1-10 mils at the probe tip of a vertical probe card. By means of the film coating, the nano film coating on the vertical probe can effectively ensure that the probe has excellent quality of no adhesion, high conductivity, reduced contact force and prolonged service life, thereby improving the yield of wafer test, reducing the cleaning frequency of the probe and reducing the overall test cost.
Description
Technical field
The present invention relates to a kind of probe (Probe Card) that is used for wafer probe (Wafer Probe) test, particularly about a kind of probe with vertical probe carb of conducting polymer nano-coating.
Background technology
Probe (Probe Card) is the structure that is made of multilayer board (PCB), some is above 30 layers, its complex structure also utilizes a series of electronic contact (pad) on the indivedual contact of many probes (Probe) (spy is touched) wafer, the contact point of every probe and wafer is more tiny more than hair.Probe is to be applied in integrated circuit (IC) as yet before the encapsulation, at the crystal grain (Die) that is formed by wafer (Wafer) cutting, with probe this crystal grain is done the function test, to filter out unacceptable product, and the encapsulation engineering after carrying out again.Therefore, the survey of wafer pin is in the integrated circuit manufacturing manufacturing cost to be influenced one of sizable important flow process.
For the vertical probe card structure; the two ends of probe can electrically connect determinand and circuit board respectively; because the electric current suitable height of moment conducting between tips of probes and each weld pad; therefore through regular meeting because the temperature at two ends is too high or or even the generation of spark arranged; and cause tips of probes, thereby to the reliability of test and all exert an adverse impact the serviceable life of probe because produce oxide layer or carbonization phenomenon takes place and make electric conductivity reduce to raise with resistance value.
In addition, contact to reach the relation between the good test mass with the good of crystal grain to be measured for the probe in the whole vertical probe carb, with the vertical probe carb is example, because it is sticking that the needle point of its probe is stained with easily, and make test mass variation or mistake survey, can cause testing yield and glide rapidly.Be generally and addressed this problem, adopted the method that strengthens contact forces (Overdrive) to make probe tip more go deep into the surface of crystal grain to be measured mostly, to reach preferable contact and good test mass.Adopting increases this solution of contact force, though can certain effect be arranged to keeping the test yield, but destroy the understructure of crystal grain to be measured easily, especially (0.13um, 90nm, 65nm in advanced person's wafer manufacturing technology ... or the like) when importing frangible low dielectric (low-k dielectrics) material, can require wafer pin survey technology can not make low dielectric (low-k dielectrics) material and subsurface material or malformation or destruction.And if when adopting the cleaning probe to be solution, may be because number of probes increases or problem such as probe spacing minimizing, and the frequency (clear pin frequency) of cleaning probe is increased rapidly, and can reduce the utilization rate and the minimizing probe life-span of tester table.
Existing vertical probe carb ubiquity probe easily is stained with sticking problem, though industry has been developed in this method of detecting probe surface plating plated film in recent years, can't solve probe but this method can only solve the life problems of probe mostly and be stained with sticking problem, therefore still can't solve improving test yield and this problem of stable testing.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of vertical probe carb, its probe structure can make the wafer sort steady quality, and make probe can not be stained with sticking crystal grain and reach and reduce clear pin frequency, improve the tester table mobility and improve the test yield, thereby reduce the effect of integrated testability cost.
For achieving the above object, the invention provides a kind of probe of vertical probe carb, a conducting polymer nano-coating made and is coated with by this probe by metal material.
Compared with prior art, the probe of vertical probe carb provided by the invention, cause at its detecting probe surface, therefore makes the probe of vertical probe carb of the present invention possess the excellent quality of not being stained with sticking (No Clean), high conductivity, stablizing contact resistance (ContactResistance), life-saving with the electrical-conductive nanometer material film plating.The probe of vertical probe carb provided by the present invention, can make test mass stable, it utilizes probe and intercrystalline to be measured to produce the principle of attractive force hardly, make probe have and be not stained with sticking characteristic, and the probe that makes vertical probe carb of the present invention has the clear pin frequency of reduction, improve the tester table mobility, improve the test yield, and the advantage that reduces the integrated testability cost.
The present invention is further illustrated below in conjunction with accompanying drawing and embodiment.
Description of drawings
Fig. 1 is the structural representation of preferred embodiment of using the vertical probe carb of probe of the present invention.
Fig. 2 is the enlarged diagram of the nano-coating of Fig. 1 middle probe needle point.
Embodiment
Relevant detailed description of the present invention and technology contents, existing as follows with regard to accompanying drawings:
The present invention discloses a kind of probe of vertical probe carb, comprises a plurality of probes and conducting polymer nano-coating, and wherein these probes are to be made by metal material, and device is on vertical probe carb, and the conducting polymer nano-coating then is plated on these probes.
Above-mentioned vertical probe carb is micro electronmechanical array microprobe card (MEMS probe card) or the rectilinear line pin probe made from micro-electromechanical technology.
Above-mentioned conducting polymer nano-coating is to have the conductive polymer material of not being stained with stick nature, and wherein this conductive polymer material is to select a composition or derivatives thereof of selecting in polypyrrole (Polypyrrole), poly-phenylene vinylene (ppv) (Polyparaphenylene), polythiophene (Polythiophene), polyaniline (Polyaniline) or the above-mentioned group at least.And the thickness of conducting polymer nano-coating can be 1～20 nanometer, also can be 1～10 nanometer.
The material of above-mentioned probe is a metal material, comprise that nickel, gold, copper, tungsten, rhenium, titanium, platinum, palladium, silver, zinc, beryllium etc. have metal material or its alloy of electric conductivity, and alloy can be rhenium tungsten or beryllium copper.Wherein, the structure of probe is metal Microspring or metal wire pin.
The method that above-mentioned conducting polymer nano-coating is plated on these probes can be a chemical plating method.Wherein, this conducting polymer nano-coating is plated on the surface perpendicular to needle point place 1～10 mil (mil) of these probes.
Fig. 1 is the structural representation of preferred embodiment of using the vertical probe carb of probe of the present invention.As shown in Figure 1, the vertical probe carb of this embodiment comprises a substrate 10, a guide 12 and a plurality of probe 14, wherein substrate 10 bottom surfaces have a plurality of weld pads (not shown) that present convex, guide mechanism 12 is arranged on the position corresponding to substrate 10 bottom surfaces, and above-mentioned all probes 14 then are arranged in the guide 12 in a movable manner.The top of each probe 14 is corresponding to the below, position of each weld pad of substrate 10, then extend towards the outside of guide mechanism 12 bottom, therefore when probe is applied to testing a chip, the bottom of each probe 14 is pressed against the contact of chip to be measured, chip to be measured and probe simultaneously make probe 14 tops be pressed against each weld pad of substrate 10, so that can electrically connect mutually by means of the elasticity of each probe 14.
Fig. 2 is the enlarged diagram that has probe 14 needle points of nano-coating among Fig. 1, the present invention's probe 14 is in this embodiment still kept copline with former probe, and because nano-coating thickness, can not cause the change of probe size between 1～20nm and measurement exerts an influence to high frequency.But, by present embodiment as can be known, no matter the structure of vertical probe carb is how, according to the amplification partial structure of the probe 14 that Fig. 2 disclosed as can be known, as long as the surface plating of 14 most advanced and sophisticated places can reach effect of the presently claimed invention with conducting polymer nano-coating 140 to probe.
And above-mentioned substrate 10 can be selected from printed circuit board (PCB) or silicon substrate, but the material of vertical probe 14 then is the metal material or the alloy of electric conductivity, and common alloy material is rhenium tungsten, beryllium copper.
In addition, with regard to the process of signal transmission, when vertical probe is carrying out signal when transmission, because being coated with the probe of conducting polymer nano-coating has and is not stained with sticking characteristic, therefore probe touches the correct test position of crystal grain to be measured easily, and substantially free of impurities, and make probe reach signal transmission more accurately carrying out can avoiding noise when signal transmits, improve the stability and the yield of test simultaneously.
In addition, in order to strengthen frangible low dielectric (low-k dielectrics) material that (0.13um, 90nm, 65nm...) imports in advanced person's wafer manufacturing technology, require wafer pin survey technology can not make low dielectric (low-k dielectrics) material and subsurface material or structure thereof cause distortion or destruction.Because not being stained with of nano-coating probe is sticking, therefore will not be made as overdrive by tester table in the present invention, establish a minimum value and get final product, so just can reach above-mentioned requirement, and guarantee to test preferably accuracy rate and quality.
In addition, the nano-coating structure of the probe of the vertical probe carb that the present invention discloses can be by manufacture methods such as for example plated films, on detecting probe surface, directly form nano-coating, therefore only need be by accurate film coating jig control probe plated film length, and owing to only need with the size of printed circuit board (PCB) or silicon substrate and the relative distance of probe, design parameter as accurate film coating jig, therefore the present invention can be under the prerequisite that does not change former probe card configuration, can finish the previous operations of the nano-coating of probe probe, therefore relatively also make the probe copline of vertical probe carb of the present invention can not change because of being coated with of nano-coating, being coated with the qualification rate of process and output for nano-coating so all has apparent help, thereby has also reduced required man-hour of expending of whole manufacture process and cost.
In sum, the probe of a kind of vertical probe carb provided by the invention is because its institute The nano-coating that has make vertical probe carb can adopt in have high degree of integration, high pin number, The chance of close spacing, and in conjunction with accurate film coating jig design and manufacturing technology so that the present invention What the probe nano plated film cost of manufacture of vertical probe carb and qualification rate all obtained showing advances Step.
The probe of the vertical probe carb that the present invention discloses, these install at vertical probe The probe of card mainly is the wafer sort that is applied in the semiconductor industry, and this class probe exists Do wafer sort the problem that sticks crystal grain is arranged often. Compared with prior art, the present invention In mode not seen before, namely plate the conducting polymer nano-coating at detecting probe surface, can Make probe and intercrystalline to be measured produce hardly attraction, so that probe has the characteristic of not sticking, And make the present invention have the clear pin frequency of reduction, and improve the tester table mobility, improve test very Rate, and the advantage that reduces the integrated testability cost.
Claims (10)
1. the probe of a vertical probe carb is made by metal material, is used for device at described vertical probe carb, it is characterized in that: be coated with the conducting polymer nano-coating on the described probe.
2. the probe of vertical probe carb according to claim 1, it is characterized in that: described conducting polymer nano-coating is to have the conductive polymer material of not being stained with stick nature.
3. as the probe of vertical probe carb as described in the claim 2, it is characterized in that: described conductive polymer material comprises selects a composition or derivatives thereof of selecting at least in polypyrrole, poly-phenylene vinylene (ppv), polythiophene, polyaniline or the above-mentioned group.
4. as the probe of vertical probe carb as described in claim 1 or 3, it is characterized in that: the thickness of described conducting polymer nano-coating is 1～20 nanometer.
5. as the probe of vertical probe carb as described in claim 1 or 3, it is characterized in that: the thickness of described conducting polymer nano-coating is 1～10 nanometer.
6. the probe of vertical probe carb according to claim 1, it is characterized in that: described metal material comprises nickel, gold, copper, tungsten, rhenium, titanium, beryllium, the metal material with electric conductivity or its alloy.
7. as the probe of vertical probe carb as described in the claim 6, it is characterized in that: described alloy is rhenium tungsten or beryllium copper.
8. the probe of vertical probe carb according to claim 1, it is characterized in that: the structure of described probe comprises a metal Microspring or a metal wire pin.
9. the probe of vertical probe carb according to claim 1, it is characterized in that: described conducting polymer nano-coating is a kind of high molecular nanometer plated film that forms with chemical plating method.
10. the probe of vertical probe carb according to claim 1 is characterized in that: described conducting polymer nano-coating is plated on the surface perpendicular to needle point place 1～10 mil of this probe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810098449.0A CN101587134A (en) | 2008-05-23 | 2008-05-23 | Probe of vertical probe card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810098449.0A CN101587134A (en) | 2008-05-23 | 2008-05-23 | Probe of vertical probe card |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101587134A true CN101587134A (en) | 2009-11-25 |
Family
ID=41371464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200810098449.0A Pending CN101587134A (en) | 2008-05-23 | 2008-05-23 | Probe of vertical probe card |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101587134A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110488200A (en) * | 2019-07-30 | 2019-11-22 | 浙江杭可科技股份有限公司 | One kind being suitable for charging and discharging lithium battery probe ageing tester and aging method |
| TWI794676B (en) * | 2019-11-11 | 2023-03-01 | 日商日本麥克隆尼股份有限公司 | Electrical connection device |
-
2008
- 2008-05-23 CN CN200810098449.0A patent/CN101587134A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110488200A (en) * | 2019-07-30 | 2019-11-22 | 浙江杭可科技股份有限公司 | One kind being suitable for charging and discharging lithium battery probe ageing tester and aging method |
| TWI794676B (en) * | 2019-11-11 | 2023-03-01 | 日商日本麥克隆尼股份有限公司 | Electrical connection device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20020153913A1 (en) | Probe for the probe card | |
| KR101453474B1 (en) | Electrical Test Probe | |
| KR102015798B1 (en) | Probe for the test device | |
| US5266895A (en) | Probe with contact portion including Au and Cu alloy | |
| CN103261896A (en) | Probe card | |
| CN100353515C (en) | Method for online test of wafer metal interconnection line reliability | |
| KR102072634B1 (en) | Probe card needle with improved corrosion and electrical properties | |
| WO2005072438A2 (en) | Multi-signal single beam probe | |
| CN101587134A (en) | Probe of vertical probe card | |
| CN105723225A (en) | Probe pin and method for producing a probe pin | |
| TWI305839B (en) | Contact-making apparatus and method for production of at least one contact element of a contact-making apparatus | |
| EP1584932A1 (en) | Method of testing semiconductor wafers with non-penetrating probes | |
| US20090212805A1 (en) | Probe of vertical probe card | |
| US8471581B2 (en) | Apparatus and method for inspecting defects in circuit pattern of substrate | |
| CN101592682A (en) | probe of horizontal probe card | |
| CN211697918U (en) | Probe card | |
| JP3683183B2 (en) | Insulating film evaluation method and evaluation apparatus | |
| TW200532209A (en) | Multi-signal single beam probe | |
| TWI271528B (en) | Method of circuit electrical test | |
| JP2751353B2 (en) | Method and apparatus for electrically measuring wafer characteristics | |
| CN101592681A (en) | Probe of test fixture | |
| KR101018490B1 (en) | Needle for probe card | |
| WO2018009940A1 (en) | Stacked stud bump contacts for wafer test contactors, and associated methods | |
| CN115774132A (en) | Film laser resistance-adjusting probe card | |
| Kataoka et al. | Micro phenomena in low contact-force probing on aluminum |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20091125 |