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CN101499785A - 设置有功率放大器的高频模块 - Google Patents

设置有功率放大器的高频模块 Download PDF

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Publication number
CN101499785A
CN101499785A CNA2009100028133A CN200910002813A CN101499785A CN 101499785 A CN101499785 A CN 101499785A CN A2009100028133 A CNA2009100028133 A CN A2009100028133A CN 200910002813 A CN200910002813 A CN 200910002813A CN 101499785 A CN101499785 A CN 101499785A
Authority
CN
China
Prior art keywords
power amplifier
filter
frequency module
ground
multilayered substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2009100028133A
Other languages
English (en)
Chinese (zh)
Inventor
五井智之
安达拓也
味冈厚
八贺仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Publication of CN101499785A publication Critical patent/CN101499785A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H01L2924/30111—Impedance matching

Landscapes

  • Amplifiers (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
CNA2009100028133A 2008-01-31 2009-01-24 设置有功率放大器的高频模块 Pending CN101499785A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2008022150 2008-01-31
JP2008022151 2008-01-31
JP2008022150A JP4450079B2 (ja) 2008-01-31 2008-01-31 高周波モジュール
JP2008022152 2008-01-31

Publications (1)

Publication Number Publication Date
CN101499785A true CN101499785A (zh) 2009-08-05

Family

ID=40946690

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2009100028133A Pending CN101499785A (zh) 2008-01-31 2009-01-24 设置有功率放大器的高频模块

Country Status (2)

Country Link
JP (1) JP4450079B2 (ja)
CN (1) CN101499785A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103066348A (zh) * 2013-01-30 2013-04-24 深圳市麦捷微电子科技股份有限公司 一种新型ltcc双工器
CN103190082A (zh) * 2010-11-24 2013-07-03 日立金属株式会社 电子部件
CN103811470A (zh) * 2012-11-05 2014-05-21 太阳诱电株式会社 电路模块
CN106230395A (zh) * 2016-08-28 2016-12-14 戴永胜 一种高度抑制uhf波段低噪声放大器模块
CN109167582A (zh) * 2018-07-23 2019-01-08 华南理工大学 基于频率选择性耦合的宽带带通滤波功率放大器
CN111756334A (zh) * 2020-07-31 2020-10-09 中国电子科技集团公司第十四研究所 一种立体微组装低频双波段驱动功率放大器
CN113285198A (zh) * 2020-01-31 2021-08-20 Tdk株式会社 层叠型平衡-不平衡转换器

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5768941B2 (ja) 2012-10-17 2015-08-26 株式会社村田製作所 高周波モジュール
JP2021129217A (ja) * 2020-02-13 2021-09-02 株式会社村田製作所 高周波モジュールおよび通信装置
JP2021132346A (ja) * 2020-02-21 2021-09-09 株式会社村田製作所 高周波モジュール及び通信装置
CN115668759A (zh) 2020-05-25 2023-01-31 株式会社村田制作所 追踪器模块、功率放大模块、高频模块以及通信装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103190082A (zh) * 2010-11-24 2013-07-03 日立金属株式会社 电子部件
CN103190082B (zh) * 2010-11-24 2015-09-16 日立金属株式会社 电子部件
CN103811470A (zh) * 2012-11-05 2014-05-21 太阳诱电株式会社 电路模块
CN103811470B (zh) * 2012-11-05 2018-04-10 太阳诱电株式会社 电路模块
CN103066348A (zh) * 2013-01-30 2013-04-24 深圳市麦捷微电子科技股份有限公司 一种新型ltcc双工器
CN103066348B (zh) * 2013-01-30 2015-07-01 深圳市麦捷微电子科技股份有限公司 一种新型ltcc双工器
CN106230395A (zh) * 2016-08-28 2016-12-14 戴永胜 一种高度抑制uhf波段低噪声放大器模块
CN106230395B (zh) * 2016-08-28 2019-04-05 深圳波而特电子科技有限公司 一种高度抑制uhf波段低噪声放大器模块
CN109167582A (zh) * 2018-07-23 2019-01-08 华南理工大学 基于频率选择性耦合的宽带带通滤波功率放大器
CN113285198A (zh) * 2020-01-31 2021-08-20 Tdk株式会社 层叠型平衡-不平衡转换器
CN113285198B (zh) * 2020-01-31 2022-04-15 Tdk株式会社 层叠型平衡-不平衡转换器
CN111756334A (zh) * 2020-07-31 2020-10-09 中国电子科技集团公司第十四研究所 一种立体微组装低频双波段驱动功率放大器

Also Published As

Publication number Publication date
JP2009182277A (ja) 2009-08-13
JP4450079B2 (ja) 2010-04-14

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C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20090805