CN101497793A - Etchant composition for etching indium tin oxide layer and etching method using the same - Google Patents
Etchant composition for etching indium tin oxide layer and etching method using the same Download PDFInfo
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- CN101497793A CN101497793A CNA2009100039072A CN200910003907A CN101497793A CN 101497793 A CN101497793 A CN 101497793A CN A2009100039072 A CNA2009100039072 A CN A2009100039072A CN 200910003907 A CN200910003907 A CN 200910003907A CN 101497793 A CN101497793 A CN 101497793A
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- tin oxide
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- 238000005530 etching Methods 0.000 title claims abstract description 112
- 238000000034 method Methods 0.000 title claims abstract description 16
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 title abstract description 12
- 239000000203 mixture Substances 0.000 title abstract description 11
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 72
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 24
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000002131 composite material Substances 0.000 claims description 53
- -1 indium tin oxide compound Chemical class 0.000 claims description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract description 21
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 239000000126 substance Substances 0.000 abstract description 8
- 235000006408 oxalic acid Nutrition 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000002425 crystallisation Methods 0.000 abstract description 3
- 230000008025 crystallization Effects 0.000 abstract description 3
- 231100000957 no side effect Toxicity 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000002244 precipitate Substances 0.000 abstract 1
- 239000003153 chemical reaction reagent Substances 0.000 description 7
- 230000003628 erosive effect Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Liquid Crystal (AREA)
Abstract
An etchant composition for etching an indium tin oxide layer and a method of etching using the same. The composition is used for etching an Indium Tin Oxide (ITO) transparent conductive layer in a TFT-LCD electronic component and a display device for preparing an ITO layer, contains 4 to 10 wt% of sulfuric acid, 2.5 to 6.0 wt% of nitric acid, 0.5 to 5 wt% of an etching control agent and the balance of water based on the total weight of the composition, has excellent etching performance for the ITO transparent conductive layer, reduces chemical attack on a photosensitive material such as a photoresist in an etching process, and does not leave residues or precipitates. In this composition, oxalic acid does not crystallize below 0 ℃, but oxalic acid crystallization occurs in a conventional oxalic acid-based etchant composition, and no side effects occur on a lower metal layer, but a hydrochloric acid-based etchant composition occurs. Thus, the yield of TFT-LCD electronic components and display devices using ITO layers can be significantly improved, and they contain inexpensive and highly stable components such as sulfuric acid, and the composition remains relatively stable over time, enabling manufacturing costs to be reduced.
Description
The Korean Patent Application No. that the application requires to submit in Korea S Department of Intellectual Property on January 28th, 2008 is the right of priority of 10-2008-0008715, all incorporates its disclosed content into this paper by reference.
Technical field
The present invention relates to the method that is used for the etching agent composite of etching indium tin oxide layer and utilizes this etching agent composite etching indium tin oxide layer, in more detail, the present invention relates to a kind of etching agent composite, it has excellent etching performance to indium tin oxide (ITO) transparency conducting layer, has stability, during etching work procedure, reduce for example chemical erosion of photo-resist of photochromics, and can not stay residue or throw out, and the present invention relates to utilize the method for this etching agent composite etching ITO layer.
Background technology
Liquid-crystal display (LCD) equipment has high resolving power and shows lively image.In addition, the LCD equipment energy consumption is low.In addition, LCD equipment can be made very thin.Because these advantages, LCD equipment has become one of the most frequently used flat panel display equipment.Drive LCD equipment by circuit such as thin film transistor (TFTs).Usually, TFT-LCD forms pixel on display screen.In TFT-LCDs, TFT plays switching device.By forming TFT-LCD at the TFT substrate of arranging with matrix form with in the face of filling liquid crystal material between the colored filter substrate of TFT substrate.The method of making TFT-LCD comprises formation TFT substrate, colored filter, panel combination (cell) and module.In order to obtain accurately lively image, essential TFT substrate and the colored filter accurately made.
When the pixel show electrode of preparation TFT-LCD equipment, must have transparent and optical property and comprise the film of high conductive material.At present, indium tin oxide (ITO) and indium-zinc oxide (IZO) are used as the material that forms nesa coating.In order in the pixel show electrode, to form the circuit of wishing, must be according to the figure etch thin film layer of circuit.
Yet, because the chemical erosion of ITO or IZO utilizes the conventional etching reagent that is usually used in the etching metal bilayer to be difficult to the nesa coating that etching comprises ITO or IZO.Particularly utilized chloroazotic acid (HCl+CH
3COOH+HNO
3), the hydrochloric acid soln (FeCl of iron(ic) chloride (III)
3/ HCl), phosphoric acid (H
3PO
4) or Hydrogen bromide (HBr) as the etching reagent of Wet-type etching nesa coating.Yet when the hydrochloric acid soln etching ITO film that utilizes based on the etching reagent of chloroazotic acid or iron(ic) chloride (III), though these etching reagents are inexpensive, the pattern edge etching is very fast, thereby etch profile is poor.In addition, the hydrochloric acid or the nitric acid that are used as the principal constituent of etching reagent are easy to volatilization, thereby it forms serious the variation after for some time.In addition, phosphoric acid corrosion aluminium has high viscosity and costliness, Hydrogen bromide costliness and toxicity height.In addition, can use the amorphous indium tin oxide of oxalic acid etching (ITO) film.In this case, form residue easily around the ITO section, the solubleness of oxalic acid is crossed low so that may be formed precipitation at low temperatures, causes the etching system fault thus.
Summary of the invention
The invention provides etching agent composite, it has excellent etching performance to indium tin oxide (ITO) transparency conducting layer, have stable composition, in etching work procedure, reduce, and can not stay residue or throw out for example chemical erosion of photo-resist of photochromics.
According to an aspect of the present invention, provide a kind of etching agent composite, its gross weight based on this etching agent composite comprises the sulfuric acid of 4～10wt%, the nitric acid of 2.5～6.0wt%, the etching control agent of 0.5～5wt% and the water of surplus.
According to a further aspect in the invention, provide a kind of in making the pixel show electrode of TFT-LCD the method for etching indium tin oxide compound (ITO) layer, this method comprises utilizes etching agent composite etching indium tin oxide compound (ITO) layer, and this etching agent composite comprises the sulfuric acid of 4～10wt%, the nitric acid of 2.5～6.0wt%, the etching control agent of 0.5～5wt% and the water of surplus based on the gross weight of this etching agent composite.
By being described in detail with reference to the attached drawings its exemplary embodiment, make of the present invention above-mentioned more obvious with further feature and advantage.
Description of drawings
Fig. 1 shows that utilization is wet according to the etching agent composite of embodiment of the present invention and carves scanning electronic microscope (SEM) image of indium tin oxide (ITO) transparency conducting layer section after the operation;
Fig. 2 shows that utilizing etching agent composite to wet carves the operation SEM image of ITO transparency conducting layer section afterwards, and the contained sulfuric acid amount of this etching agent composite is less than the etching agent composite according to embodiment of the present invention;
Fig. 3 shows that utilizing etching agent composite to wet carves the operation SEM image of ITO transparency conducting layer section afterwards, and the contained nitric acid amount of this etching agent composite is less than the etching agent composite according to embodiment of the present invention;
Fig. 4 shows that utilizing etching agent composite to wet carves the operation SEM image of ITO transparency conducting layer section afterwards, and the contained etching control agent of this etching agent composite is less than the etching agent composite according to embodiment of the present invention.
Embodiment
Referring now to the accompanying drawing that shows illustrative embodiments of the invention the present invention is described more fully.
According to etching agent composite of the present invention, based on the gross weight of this etching agent composite, comprise a) sulfuric acid of 4～10wt%, the b) nitric acid of 2.5～6.0wt%, c) the etching control agent of 0.5～5wt% and the water of surplus.
In etching agent composite, be easy to separate this etching control agent.In addition, the etching control agent makes the electrolyte effect maximization, reduces the bounding force between photo-resist and the metal level (and/or metal oxide layer) thus.As a result, the etching control agent has excellent etching performance to amorphous indium tin oxide (ITO).
In this, when the amount of etching control agent is less than 0.5wt% based on the gross weight of etching agent composite, be difficult to reduce the bounding force between photo-resist and the metal level (and/or metal oxide layer), thereby reduce the linearity (linearity) of etched metal level.On the other hand,, increase the cost of etching reagent and may destroy photo-resist during based on the gross weight of etching agent composite when the amount of etching control agent greater than 5wt%.
The etching control agent can be to comprise K
+Ionic compound, for example KNO
3, CH
3COOK, KHSO
4, KH
2PO
4, K
2SO
4, K
2HPO
4Or K
3PO
4, and preferred KNO
3Or CH
3COOK.
Nitric acid has excellent etching performance to indium oxide layer, reduces the chemical erosion to photochromics such as photo-resist, and can not stay residue.
When the amount of nitric acid is less than 2.5wt% based on the gross weight of etching agent composite, can reduce the etch-rate of indium oxide layer.On the other hand, when the amount of nitric acid based on the gross weight of etching agent composite during greater than 6wt%, but chemical erosion adjacent metal such as Mo and Al.
Constitute the sulfuric acid etchant ITO of main oxygenant, and can utilize known method to prepare.Particularly sulfuric acid can have the purity of semiconductor machining level.
When the vitriolic amount is less than 4wt% based on the gross weight of etching agent composite, can reduce the etch-rate of etching agent composite.On the other hand, when the vitriolic amount based on the gross weight of etching agent composite during greater than 10wt%, but chemical erosion photo-resist and/or adjacent metal.
In addition, except above-mentioned basal component, constitute by water according to the surplus of etching agent composite of the present invention (a kind of aqueous solution).In this, water can be ultrapure water.
With reference to the following example the present invention is described in further detail.These embodiment only are used for illustrative purposes rather than attempt to limit the scope of the invention.
[embodiment, comparative example 1～3]
According to the preparation of the composition (wt%) shown in the following table 1 etching agent composite.The etching control agent is KNO
3
＜table 1 〉
[EXPERIMENTAL EXAMPLE]
Etching performance preparation and that be used for the etching agent composite of etching ITO transparency conducting layer is compared mutually in embodiment and comparative example 1～3.The etch-rate of measurement etching agent composite also is presented in the following table 2.Fig. 1 to 4 shows scanning electron display device (SEM) image of the etched ITO transparency conducting layer of etching agent composite that uses embodiment and comparative example 1～3.
＜table 2 〉
With reference to table 2 and Fig. 1, when using the etching agent composite etching ITO transparency conducting layer of embodiment, etch-rate is high relatively, and this layer has level and smooth surface and the residue of residual particles shape not on it.
With reference to table 2 and Fig. 2, the etching agent composite of comparative example 1 comprises the sulfuric acid than scope less amount of the present invention, thereby etch-rate reduces and residual ITO residue.
With reference to table 2 and Fig. 3, the etching agent composite of comparative example 2 comprises the nitric acid than scope less amount of the present invention, thereby etch-rate reduces and residual ITO residue.
With reference to table 2 and Fig. 4, the etching agent composite of comparative example 3 does not influence etch-rate, but comprise etching control agent than scope less amount of the present invention, because the bounding force between photo-resist and the metal level, thereby reduced the linearity of etched ITO transparency conducting layer, in distribution structure, produced defective thus.
According to embodiment of the present invention, the etching agent composite that is used for the ITO transparency conducting layer of TFT-LCD, the ITO transparency conducting layer is had excellent etching performance, in etch process, reduce, and can not stay residue or throw out for example chemical erosion of photo-resist of photochromics.In addition, in etching agent composite according to the present invention, crystallization can not take place below 0 ℃ in oxalic acid, but routine based on the etching agent composite of oxalic acid in crystallization can take place, and side effect can not take place, in based on the etching agent composite of hydrochloric acid side effect can take place on lower metal level.Thereby etching agent composite of the present invention can significantly improve manufacturing and adopt the TFT-LCD electronic component of ITO layer and the productivity of display equipment.In addition, this etching agent composite comprises inexpensive and high stability component such as sulfuric acid, and the composition of this etching reagent keeps relative stability after after a while, thereby can reduce manufacturing cost.
Though shown in detail and described the present invention with reference to exemplary embodiment, but, it will be appreciated by the skilled addressee that under the situation of the spirit and scope of the present invention that do not break away from claims qualification and can carry out various changes to it aspect form and the details.
Claims (6)
1. an etching agent composite based on the gross weight of this etching agent composite, comprises the sulfuric acid of 4～10wt%, the nitric acid of 2.5～6.0wt%, the etching control agent of 0.5～5wt% and the water of surplus.
2. etching agent composite according to claim 1, wherein, this etching control agent comprises and is selected from KNO
3, CH
3COOK, KHSO
4, KH
2PO
4, K
2SO
4, K
2HPO
4And K
3PO
4A kind of material in the group of forming.
3. etching agent composite according to claim 2, wherein, this etching control agent comprises KNO
3Or CH
3COOK.
4. the method for etching indium tin oxide compound (ITO) layer in making the pixel show electrode of TFT-LCD, this method comprises utilizes etching agent composite etching indium tin oxide compound (ITO) layer, based on the gross weight of this etching agent composite, this etching agent composite comprises the sulfuric acid of 4～10wt%, the nitric acid of 2.5～6.0wt%, the etching control agent of 0.5～5wt% and the water of surplus.
5. method according to claim 4, wherein, this etching control agent comprises and is selected from KNO
3, CH
3COOK, KHSO
4, KH
2PO
4, K
2SO
4, K
2HPO
4And K
3PO
4A kind of material in the group of forming.
6. method according to claim 5, wherein, this etching control agent comprises KNO
3Or CH
3COOK.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080008715 | 2008-01-28 | ||
| KR1020080008715A KR20090082772A (en) | 2008-01-28 | 2008-01-28 | Etchant composition for indium tin oxide layer and etching method using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101497793A true CN101497793A (en) | 2009-08-05 |
Family
ID=40945066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2009100039072A Pending CN101497793A (en) | 2008-01-28 | 2009-01-23 | Etchant composition for etching indium tin oxide layer and etching method using the same |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4949416B2 (en) |
| KR (1) | KR20090082772A (en) |
| CN (1) | CN101497793A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103911157A (en) * | 2012-12-28 | 2014-07-09 | 东友精细化工有限公司 | Etchant composition for metallic oxide layer |
| CN105907396A (en) * | 2015-02-23 | 2016-08-31 | 东友精细化工有限公司 | Etching solution composition for indium oxide layer and manufacturing method of an array substrate for liquid crystal display using the same |
| CN106479505A (en) * | 2016-09-29 | 2017-03-08 | 杭州格林达化学有限公司 | A kind of fine etching solution for ITO conductive film and preparation method thereof |
| CN114106835A (en) * | 2021-11-11 | 2022-03-01 | Tcl华星光电技术有限公司 | Etching solution composition and display panel |
| CN116179203A (en) * | 2021-11-26 | 2023-05-30 | 东友精细化工有限公司 | Indium metal oxide film etchant composition and pattern forming method using the same |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101774484B1 (en) | 2011-02-15 | 2017-09-05 | 삼성디스플레이 주식회사 | Non-halogenated etchant for etching an indium oxide layer and method of manufacturing a display substrate using the non-halogenated etchant |
| CN102585832A (en) * | 2011-12-30 | 2012-07-18 | 江阴江化微电子材料股份有限公司 | Low-tension ITO (Indium Tin Oxide) etching liquid and preparation method thereof |
| JP6261926B2 (en) | 2013-09-18 | 2018-01-17 | 関東化學株式会社 | Metal oxide etchant composition and etching method |
| CN116540792B (en) * | 2023-06-25 | 2023-09-12 | 福建天甫电子材料有限公司 | Flow automatic control method and system for preparation of oxalic acid ITO etching solution |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000008184A (en) * | 1998-06-24 | 2000-01-11 | Toppan Printing Co Ltd | Multilayer conductive film etching method |
| TWI223661B (en) * | 2000-10-19 | 2004-11-11 | Techno Semichem Co Ltd | Etchant formulation for ITO film |
| KR101191405B1 (en) * | 2005-07-13 | 2012-10-16 | 삼성디스플레이 주식회사 | Etchant and method for fabricating liquid crystal display using the same |
| KR101393599B1 (en) * | 2007-09-18 | 2014-05-12 | 주식회사 동진쎄미켐 | Etchant composition for patterning circuits in thin film transistor-liquid crystal devices |
-
2008
- 2008-01-28 KR KR1020080008715A patent/KR20090082772A/en not_active Ceased
-
2009
- 2009-01-23 CN CNA2009100039072A patent/CN101497793A/en active Pending
- 2009-01-28 JP JP2009016868A patent/JP4949416B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103911157A (en) * | 2012-12-28 | 2014-07-09 | 东友精细化工有限公司 | Etchant composition for metallic oxide layer |
| CN105907396A (en) * | 2015-02-23 | 2016-08-31 | 东友精细化工有限公司 | Etching solution composition for indium oxide layer and manufacturing method of an array substrate for liquid crystal display using the same |
| CN106479505A (en) * | 2016-09-29 | 2017-03-08 | 杭州格林达化学有限公司 | A kind of fine etching solution for ITO conductive film and preparation method thereof |
| CN114106835A (en) * | 2021-11-11 | 2022-03-01 | Tcl华星光电技术有限公司 | Etching solution composition and display panel |
| CN116179203A (en) * | 2021-11-26 | 2023-05-30 | 东友精细化工有限公司 | Indium metal oxide film etchant composition and pattern forming method using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090082772A (en) | 2009-07-31 |
| JP4949416B2 (en) | 2012-06-06 |
| JP2009177189A (en) | 2009-08-06 |
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