CN101497765A - Chemico-mechanical polishing solution - Google Patents
Chemico-mechanical polishing solution Download PDFInfo
- Publication number
- CN101497765A CN101497765A CNA2008100332603A CN200810033260A CN101497765A CN 101497765 A CN101497765 A CN 101497765A CN A2008100332603 A CNA2008100332603 A CN A2008100332603A CN 200810033260 A CN200810033260 A CN 200810033260A CN 101497765 A CN101497765 A CN 101497765A
- Authority
- CN
- China
- Prior art keywords
- polishing fluid
- acid
- polishing
- triazole
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a chemical-mechanical polishing solution. The chemical-mechanical polishing solution contains ground particles and water and also contains biguanide compound and nitrogen and azole compound, wherein the biguanide compound and the nitrogen and azole compound have synergistic effect and can remarkably improve the elimination rate of polysilicon.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid in the semiconductor fabrication process.
Background technology
Along with the continuous development of semiconductor technology, and the continuous increase of large-scale integrated circuit interconnection layer, it is particularly crucial that the planarization of conductive layer and insulating medium layer becomes.Cmp (CMP) technology of initiative is considered to the effective means of present overall planarization by IBM Corporation's twentieth century eighties.
Cmp (CMP) is by chemical action and mechanical effect and two kinds of effect be combined intos.Its equipment is usually by a grinding stage (polishing table) that has polishing pad (pad), and a grinding head (carrier) that is used for carries chips (wafer) is formed.Wherein grinding head is fixed chip, and the front with chip is pressed on the grinding pad then.When carrying out cmp, grinding head linearity on polishing pad (pad) moves or rotates along the direction of motion the same with grinding stage.Meanwhile, the slurries (slurry) that contain abrasive are dripped on the polishing pad (pad), and are tiled on the polishing pad (pad) because of centrifugation.Overall planarization is realized on chip (wafer) surface under machinery and chemical dual effect.
According to the difference of chemically machinery polished particular problem to be solved, the removal speed (removal rate) of polysilicon (Poly silicon) there are two kinds of different requirements.
A kind of requirement is to reduce removal rate of polysilicon, as: US 20050130428 has reported a kind of homopolymerization of oxyethane or propylene oxide or polishing fluid of multipolymer of containing, and removes speed to suppress polysilicon.The hydrophobic group of polymkeric substance is considered to be adsorbed on the polysilicon surface, has formed passivation layer, thereby has reduced removal rate of polysilicon.
Another kind of is to improve removal rate of polysilicon:
US2002032987 discloses a kind of with the polishing fluid of hydramine as additive, to improve the removal speed (removal rate) of polysilicon (Poly silicon), the wherein preferred 2-of additive (dimethylamino)-2-methyl isophthalic acid-propyl alcohol.
US2002151252 discloses a kind of polishing fluid that contains the complexing agent with a plurality of carboxylic acid structures, is used to improve polysilicon and removes speed, and wherein preferred complexing agent is EDTA (ethylenediamine tetraacetic acid (EDTA)) and DTPA (diethyl pentetic acid).
EP1072662 discloses a kind of organic polishing fluid that contains lone-pair electron and two key generation delocalization structures, and to improve the removal speed (removal rate) of polysilicon (Poly silicon), preferred compound is the compound and the salt thereof of guanidine class.
US2006014390 discloses a kind of polishing fluid that is used to improve removal rate of polysilicon, and it comprises weight percent is that 4.25%～18.5% abrasive and weight percent are 0.05%～1.5% additive.Wherein additive mainly is selected from organic basess such as quaternary ammonium salt, quaternary amine alkali and thanomin.In addition, this polishing fluid also comprises nonionic surface active agent, for example the homopolymerization of ethylene glycol or propylene glycol or copolymerization product.
Summary of the invention
Technical problem to be solved by this invention provides a kind of chemical mechanical polishing liquid that polysilicon is removed speed that significantly improves.
Polishing fluid of the present invention contains abrasive grains and water, and it also contains biguanide compound and nitrogen azole compounds simultaneously.
Wherein, described biguanide compound is preferable is selected from biguanides, N1,N1-Dimethylbiguanide, phenformin, Moroxydine, 1, one or more in the acid salt of 1 '-hexyl two [5-(rubigan) biguanides] and above-claimed cpd.What described acid was preferable is hydrochloric acid, phosphoric acid, nitric acid, acetic acid, gluconic acid or sulfonic acid.What the content of described biguanide compound was preferable is mass percent 0.01～7%.
Wherein, described nitrogen azole compounds is preferable is selected from triazole and tetrazole and the derivative thereof one or more.What the content of described nitrogen azole compounds was preferable is mass percent 0.01～15%.
Wherein, described abrasive grains is preferable is selected from SiO
2, Al
2O
3, ZrO
2, CeO
2, SiC, Fe
2O
3, TiO
2And Si
3N
4In one or more.What the content of described abrasive grains was preferable is mass percent 0.1～30%.That the particle diameter of described abrasive grains is preferable is 20～150nm, and that better is 30～120nm.
Polishing fluid of the present invention also can contain this area conventional additives, as pH regulator agent and/or dispersion agent.Described pH regulator agent can be selected from one or more in NaOH, KOH, ammonia and the organic bases; Optional in polyvinyl alcohol, polyacrylic acid, polyacrylamide and polyethylene oxide one or more of described dispersion agent; What the content of described dispersion agent was preferable is mass percent 0.01%～1%.
What the pH scope of polishing fluid of the present invention was preferable is 8～12.
Mentioned component is simply evenly mixed, be adjusted to suitable pH value with the pH regulator agent, leave standstill and can make polishing fluid of the present invention.Agents useful for same of the present invention and raw material are all commercially available to be got.
Positive progressive effect of the present invention is: biguanides material that contains simultaneously in the polishing fluid of the present invention and nitrogen azole material have synergy, can significantly improve removal rate of polysilicon.
Embodiment
Mode below by embodiment further specifies the present invention, but does not therefore limit the present invention among the described scope of embodiments.
Embodiment 1～11
Table 1 has provided polishing fluid 1～11 of the present invention, and by prescription in the table, each composition is simply evenly mixed, and surplus is a water, is adjusted to suitable pH value with the pH regulator agent, leaves standstill and can make each polishing fluid in 30 minutes.
Table 1 polishing fluid embodiment 1～11 prescription of the present invention
Effect embodiment
Table 2 has provided contrast polishing example 8 and polishing fluid of the present invention 1～6, and by prescription in the table, each composition is simply evenly mixed, and surplus is a water, is adjusted to pH=11 with Tetramethylammonium hydroxide, leaves standstill can make each polishing fluid in 30 minutes.Each polishing fluid is used for the polysilicon polishing.Polishing condition is: polishing machine platform is Logitech (Britain) 1PM52 type, 12 inches politex polishing pads (pad), 4cm*4cm square Wafer, grinding pressure 3psi, 70 rev/mins of grinding stage (polishing table) rotating speeds, 150 rev/mins of grinding head (carrier) rotation rotating speeds, polishing fluid rate of addition 100ml/min.Polish results sees Table 2.
Table 2 contrast polishing example 8 and polishing fluid of the present invention 1～6 prescription and polysilicon are removed speed
By contrast polishing fluid 2,3,4 show: along with improving constantly of Walaphage content, the removal rate of polysilicon trend is saturated, and maximum value is about 2390A/min.Continue to increase Walaphage content, do not have help improving removal rate of polysilicon.
By contrast polishing fluid 5,6,7 show: along with 1,2, and the improving constantly of 4-triazole (TAZ) content, the removal rate of polysilicon trend is saturated, and maximum value is about 2163A/min.Continue to increase the content of TAZ, do not have help improving removal rate of polysilicon.
Shown by polishing fluid 1～5 of the present invention and contrast polishing fluid 1,5～7: biguanides material and triazole exist the obvious synergistic effect, can improve removal rate of polysilicon significantly.
Shown by polishing fluid 6 of the present invention and contrast polishing fluid 8: biguanides material and tetrazole exist the obvious synergistic effect, can improve removal rate of polysilicon significantly.
Claims (11)
1. chemical mechanical polishing liquid, it contains abrasive grains and water, it is characterized in that: it also contains biguanide compound and nitrogen azole compounds simultaneously.
2. polishing fluid as claimed in claim 1, it is characterized in that: described biguanide compound is selected from biguanides, N1,N1-Dimethylbiguanide, phenformin, Moroxydine, 1, one or more in the acid salt of 1 '-hexyl two [5-(rubigan) biguanides] and above-claimed cpd.
3. polishing fluid as claimed in claim 2 is characterized in that: described acid is hydrochloric acid, phosphoric acid, nitric acid, acetic acid, gluconic acid or sulfonic acid.
4. polishing fluid as claimed in claim 1 is characterized in that: the content of described biguanide compound is mass percent 0.01～7%.
5. polishing fluid as claimed in claim 1 is characterized in that: described nitrogen azole compounds is one or more in triazole and tetrazole and the derivative thereof.
6. polishing fluid as claimed in claim 5 is characterized in that: described nitrogen azole compounds is 1,2,4-triazole, 3-amino-1,2,4-triazole, 5-carboxyl-3-amino 1,2, one or more in the amino tetrazole of 4-triazole and 5-.
7. polishing fluid as claimed in claim 1 is characterized in that: the content of described nitrogen azole compounds is mass percent 0.01～15%.
8. polishing fluid as claimed in claim 1 is characterized in that: described abrasive grains is selected from SiO
2, Al
2O
3, ZrO
2, CeO
2, SiC, Fe
2O
3, TiO
2And Si
3N
4In one or more.
9. polishing fluid as claimed in claim 1 is characterized in that: the content of described abrasive grains is mass percent 0.1～30%.
10. polishing fluid as claimed in claim 1 is characterized in that: the particle diameter of described abrasive grains is 30～120nm.
11. polishing fluid as claimed in claim 1 is characterized in that: the pH scope of described polishing fluid is 8～12.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100332603A CN101497765A (en) | 2008-01-30 | 2008-01-30 | Chemico-mechanical polishing solution |
| PCT/CN2009/000071 WO2009097737A1 (en) | 2008-01-30 | 2009-01-19 | A chemical mechanical polishing liquid |
| CN200980103153.6A CN101970595B (en) | 2008-01-30 | 2009-01-19 | A chemical mechanical polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100332603A CN101497765A (en) | 2008-01-30 | 2008-01-30 | Chemico-mechanical polishing solution |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101497765A true CN101497765A (en) | 2009-08-05 |
Family
ID=40945040
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008100332603A Pending CN101497765A (en) | 2008-01-30 | 2008-01-30 | Chemico-mechanical polishing solution |
| CN200980103153.6A Active CN101970595B (en) | 2008-01-30 | 2009-01-19 | A chemical mechanical polishing liquid |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980103153.6A Active CN101970595B (en) | 2008-01-30 | 2009-01-19 | A chemical mechanical polishing liquid |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN101497765A (en) |
| WO (1) | WO2009097737A1 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102212315A (en) * | 2010-04-08 | 2011-10-12 | 福吉米株式会社 | Polishing composition and polishing method |
| CN102477261A (en) * | 2010-11-26 | 2012-05-30 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN102533119A (en) * | 2010-12-21 | 2012-07-04 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid containing nitrogen-containing amine compounds |
| CN103945983A (en) * | 2011-11-25 | 2014-07-23 | 福吉米株式会社 | Method for polishing alloy material and method for producing alloy material |
| CN104371552A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Applications of silicon-containing organic compound in prolonging of stability of grinding particles in chemical mechanical polishing liquid |
| CN104371553A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid and applications thereof |
| CN104371550A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid for polishing silicon material |
| CN111378973A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution and application thereof |
| JP7662613B2 (en) | 2019-08-09 | 2025-04-15 | ビーエーエスエフ ソシエタス・ヨーロピア | Compositions and methods for inhibiting tungsten etching |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111378372B (en) * | 2018-12-28 | 2022-05-13 | 安集微电子（上海）有限公司 | Application of acetic acid in STI polishing |
| WO2021028264A1 (en) * | 2019-08-09 | 2021-02-18 | Basf Se | Compositions and methods for tungsten etching inhibition |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7367870B2 (en) * | 2002-04-30 | 2008-05-06 | Hitachi Chemical Co. Ltd. | Polishing fluid and polishing method |
| JP2004031443A (en) * | 2002-06-21 | 2004-01-29 | Hitachi Chem Co Ltd | Polishing solution and polishing method |
| US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
| US20050136671A1 (en) * | 2003-12-22 | 2005-06-23 | Goldberg Wendy B. | Compositions and methods for low downforce pressure polishing of copper |
-
2008
- 2008-01-30 CN CNA2008100332603A patent/CN101497765A/en active Pending
-
2009
- 2009-01-19 WO PCT/CN2009/000071 patent/WO2009097737A1/en active Application Filing
- 2009-01-19 CN CN200980103153.6A patent/CN101970595B/en active Active
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102212315A (en) * | 2010-04-08 | 2011-10-12 | 福吉米株式会社 | Polishing composition and polishing method |
| CN102212315B (en) * | 2010-04-08 | 2015-05-13 | 福吉米株式会社 | Polishing composition and polishing method |
| CN102477261A (en) * | 2010-11-26 | 2012-05-30 | 安集微电子（上海）有限公司 | Chemical mechanical polishing solution |
| CN102533119A (en) * | 2010-12-21 | 2012-07-04 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing liquid containing nitrogen-containing amine compounds |
| CN103945983A (en) * | 2011-11-25 | 2014-07-23 | 福吉米株式会社 | Method for polishing alloy material and method for producing alloy material |
| CN104371550A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid for polishing silicon material |
| CN104371553A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid and applications thereof |
| CN104371552A (en) * | 2013-08-14 | 2015-02-25 | 安集微电子（上海）有限公司 | Applications of silicon-containing organic compound in prolonging of stability of grinding particles in chemical mechanical polishing liquid |
| CN104371552B (en) * | 2013-08-14 | 2017-09-15 | 安集微电子（上海）有限公司 | Application of the silicon-containing organic compound in extension chemical mechanical polishing liquid in abrasive grains stability |
| CN104371553B (en) * | 2013-08-14 | 2017-10-13 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid and application |
| CN104371550B (en) * | 2013-08-14 | 2018-02-09 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid for being used to polish silicon materials |
| CN111378973A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子科技（上海）股份有限公司 | Chemical mechanical polishing solution and application thereof |
| JP7662613B2 (en) | 2019-08-09 | 2025-04-15 | ビーエーエスエフ ソシエタス・ヨーロピア | Compositions and methods for inhibiting tungsten etching |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101970595A (en) | 2011-02-09 |
| WO2009097737A1 (en) | 2009-08-13 |
| CN101970595B (en) | 2013-05-01 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090805 |