CN102399494B - Chemical mechanical polishing solution - Google Patents
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- CN102399494B CN102399494B CN201010277685.6A CN201010277685A CN102399494B CN 102399494 B CN102399494 B CN 102399494B CN 201010277685 A CN201010277685 A CN 201010277685A CN 102399494 B CN102399494 B CN 102399494B
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- 238000005498 polishing Methods 0.000 title claims abstract description 70
- 239000000126 substance Substances 0.000 title claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052802 copper Inorganic materials 0.000 claims abstract description 30
- 239000010949 copper Substances 0.000 claims abstract description 30
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 19
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 150000001413 amino acids Chemical class 0.000 claims abstract description 9
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 9
- 150000002367 halogens Chemical class 0.000 claims abstract description 9
- 150000001412 amines Chemical class 0.000 claims abstract description 8
- 239000003513 alkali Substances 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 9
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 claims description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 6
- 239000006061 abrasive grain Substances 0.000 claims description 6
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical group CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 claims description 4
- 239000000908 ammonium hydroxide Substances 0.000 claims description 4
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 4
- 239000011707 mineral Substances 0.000 claims description 4
- 235000010755 mineral Nutrition 0.000 claims description 4
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 4
- XWNSFEAWWGGSKJ-UHFFFAOYSA-N 4-acetyl-4-methylheptanedinitrile Chemical compound N#CCCC(C)(C(=O)C)CCC#N XWNSFEAWWGGSKJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004471 Glycine Substances 0.000 claims description 3
- 239000004153 Potassium bromate Substances 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229940094037 potassium bromate Drugs 0.000 claims description 3
- 235000019396 potassium bromate Nutrition 0.000 claims description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- URGYLQKORWLZAQ-UHFFFAOYSA-N azanium;periodate Chemical compound [NH4+].[O-]I(=O)(=O)=O URGYLQKORWLZAQ-UHFFFAOYSA-N 0.000 claims description 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 claims description 2
- VKJKEPKFPUWCAS-UHFFFAOYSA-M potassium chlorate Chemical compound [K+].[O-]Cl(=O)=O VKJKEPKFPUWCAS-UHFFFAOYSA-M 0.000 claims description 2
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 claims description 2
- 239000001230 potassium iodate Substances 0.000 claims description 2
- 235000006666 potassium iodate Nutrition 0.000 claims description 2
- 229940093930 potassium iodate Drugs 0.000 claims description 2
- 229940024606 amino acid Drugs 0.000 claims 3
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical compound OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 claims 2
- 229960002989 glutamic acid Drugs 0.000 claims 1
- 239000007800 oxidant agent Substances 0.000 abstract description 2
- 229960001484 edetic acid Drugs 0.000 abstract 2
- 239000008187 granular material Substances 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000012530 fluid Substances 0.000 description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000008139 complexing agent Substances 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229960001866 silicon dioxide Drugs 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000003352 sequestering agent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ODHCTXKNWHHXJC-VKHMYHEASA-N 5-oxo-L-proline Chemical compound OC(=O)[C@@H]1CCC(=O)N1 ODHCTXKNWHHXJC-VKHMYHEASA-N 0.000 description 1
- 229940123208 Biguanide Drugs 0.000 description 1
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 150000004283 biguanides Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- -1 diethyl pentetic acid Chemical compound 0.000 description 1
- PCHPORCSPXIHLZ-UHFFFAOYSA-N diphenhydramine hydrochloride Chemical compound [Cl-].C=1C=CC=CC=1C(OCC[NH+](C)C)C1=CC=CC=C1 PCHPORCSPXIHLZ-UHFFFAOYSA-N 0.000 description 1
- 150000002357 guanidines Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000138 intercalating agent Substances 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention relates to a chemical mechanical polishing solution. The chemical mechanical polishing solution simultaneously contains grinding granules, halogen-containing oxidant, organic amine, ethylene diamine tetraacetic acid (EDTA) and pH regulator; and the chemical mechanical polishing solution has alkali pH value. The polishing solution has very high polishing rate for silicon and copper under the alkali polishing environment. Amino acid can be continuously added into the polishing solution, so that the removal rate of the silicon and the copper is kept stable.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid.
Background technology
TSV technology (Through-Silicon-Via) is by making vertical conducting between chip and chip, between wafer and wafer, realizes the state-of-the-art technology interconnected between chip.Encapsulate bonding and uses the superimposing technique of salient point different from IC in the past, it is maximum in the density that three-dimensional is stacking that TSV advantage is to make chip, and physical dimension is minimum, shortens and interconnect thus improve the performance of chip speed and reduce power consumption.
When brilliant back of the body thinning technique (backside thinning) needs polishing in TSV technology, to silicon and copper bi-material, there is very high polishing velocity simultaneously.
The polishing of silicon is carried out usually all in the basic conditions, higher polishing velocity can be obtained.Such as:
US2002032987 discloses the polishing fluid of a kind of hydramine as additive, to improve the removal speed (removal rate) of polysilicon (Poly silicon), the wherein preferred 2-of additive (dimethylamino)-2-methyl isophthalic acid-propyl alcohol.
US2002151252 discloses a kind of polishing fluid of complexing agent containing having multiple carboxylic acid structure, remove speed for improving polysilicon, wherein preferred complexing agent is EDTA (ethylenediamine tetraacetic acid (EDTA)) and DTPA (diethyl pentetic acid).
EP1072662 discloses a kind of organic polishing fluid producing delocalization structure containing lone-pair electron and double bond, to improve the removal speed (removal rate) of polysilicon (Poly silicon), preferred compound is compound and the salt thereof of guanidine class.
US2006014390 discloses a kind of polishing fluid of the removal speed for improving polysilicon, and it comprises weight percent be 4.25% ~ 18.5% abrasive and weight percent is the additive of 0.05% ~ 1.5%.Wherein additive is mainly selected from the organic basess such as quaternary ammonium salt, quaternary amine alkali and thanomin.In addition, this polishing fluid also comprises nonionic surface active agent, the homopolymerization of such as ethylene glycol or propylene glycol or copolymerization product.
Patent CN101497765A, by utilizing the synergy of biguanides and azole material, significantly improves the polishing velocity of silicon.
The polishing of copper is carried out usually all in acid condition, utilizes oxygenant (hydrogen peroxide) high oxidation potential in acid condition, and copper easily coordination, dissolving in acid condition, realize high polishing velocity.Such as:
Patent CN 1705725A discloses a kind of polishing fluid of polish copper metallic surface, and this polishing fluid is between 2.5 to 4.0, under the effect of oxygenant (hydrogen peroxide etc.), sequestrant and passivator, removes copper metallic surface.
Patent CN1787895A discloses a kind of CMP composition, and it comprises fluid agent and oxygenant, intercalating agent, inhibitor, abrasive and solvent.In acid condition, this CMP composition is advantageously increased in the material selectivity in CMP method, can be used for the surface of copper member on polishing semiconductor substrate, and can not produce depression or other disadvantageous planarization defects in the copper of polishing.
Patent CN01818940A disclose a kind of copper polish slurry by further with oxygenant as hydrogen peroxide, and/or corrosion inhibitor is as combined in benzotriazole and formed, and what improve copper removes speed.While obtaining this higher polishing speed, maintain the stability of local PH, and significantly reduce whole and part corrosion.
Sometimes also can carry out in the basic conditions the polishing of copper, such as:
Patent CN 1644640A discloses a kind of in the basic conditions for the waterborne compositions of polish copper, said composition comprises the non-ferrous metal inhibitor that weight percent is 0.001% to 6%, weight percent is the coordination agent of 0.05% to 10% this metal, weight percent is 0.01% to 25% for accelerating the copper remover of the removal of copper, weight percent is the abrasive etc. of 0.5% to 40%, by the interaction of copper remover imidazoles and BTA, improve the removal speed of copper.
A kind of multilayer copper wire in large scale integrated circuit chemical and mechanical leveling polishing liquid is disclosed in patent CN1398938A, for improving the removal speed of copper, the moiety of polishing fluid is as follows: the weight percent 18% to 50% of abrasive material, the weight percent 0.1% to 10% of sequestrant, the weight percent 0.005% to 25% of complexing agent, the weight percent 0.1% to 10% of promoting agent, the weight percent 1% to 20% of oxygenant, and deionized water.
In the prior art, polishing in acid condition, although very high copper polishing velocity can be obtained, usually lower to the polishing velocity of silicon.Reason is in acid condition, and the Surface Oxygen of elemental silicon is changed into silicon-dioxide by oxygenant, compared with silicon, and the more difficult removal of silicon-dioxide.
Polishing in the basic conditions, if not oxidizer, although very high silicon polishing speed can be obtained, usually lower to the polishing velocity of copper.Reason is just easily removed after copper needs oxidation.But if added oxygenant, such as hydrogen peroxide, the Surface Oxygen of elemental silicon can have been changed into silicon-dioxide by hydrogen peroxide, more difficult removal.In addition, in the basic conditions, the oxygenants such as hydrogen peroxide are very unstable, can rapid decomposition failure.
Summary of the invention
The technical problem that the present invention solves is to provide a kind of chemical mechanical polishing liquid, while the polishing velocity that improve the copper under alkaline polishing environment, also can have the polishing velocity of silicon and improve significantly.
Chemical mechanical polishing liquid of the present invention, contains: abrasive grains, halogen-containing oxygenant, organic amine and ethylenediamine tetraacetic acid (EDTA) (EDTA), and described chemical mechanical polishing liquid has the pH value of alkalescence.
In the present invention, described abrasive grains is SiO
2, Al
2o
3, ZrO
2, CeO
2, SiC, Fe
2o
3, TiO
2and/or Si
3n
4in one or more, preferred SiO
2.The mass percentage of described abrasive grains is 1% ~ 30%, preferably 1% ~ 15%.
In the present invention, described halogen-containing oxygenant is one or more in potassium bromate, Potassium Iodate, Potcrate, Periodic acid and/or ammonium periodate, preferred potassium bromate.The mass percentage of described halogen-containing oxygenant is 0.5% ~ 4%.
In the present invention, described organic amine is quadrol, piperazine or its composition.The mass percentage of described quadrol is 0.2% ~ 0.8%.The mass percentage of described piperazine is 0% ~ 4%.
In the present invention, the mass percentage of described ethylenediamine tetraacetic acid (EDTA) (EDTA) is 0.01% ~ 6%, preferably 1% ~ 4%.
In the present invention, described chemical mechanical polishing liquid, also contains: pH value regulator, and described pH value regulator is quaternary ammonium hydroxide, mineral alkali or its composition.Described quaternary ammonium hydroxide is Tetramethylammonium hydroxide (TMAH).Described mineral alkali is potassium hydroxide (KOH).
In the present invention, the described pH value of described chemical mechanical polishing liquid is 8 ~ 13, preferably 10 ~ 12.
In the present invention, described chemical mechanical polishing liquid, also contains: amino acid, and described amino acid is glycine or Pidolidone, preferred glycine.Described amino acid whose mass percentage is 1% ~ 8%, preferably 1% ~ 4%.
Positive progressive effect of the present invention is: while the polishing velocity that improve the copper under alkaline polishing environment, also can have the polishing velocity of silicon and improve significantly.Continue to add amino acid in polishing fluid after, chemical mechanical polishing liquid of the present invention, to the removal rate holds steady of silicon and copper, can not cause the obvious reduction of the removal speed to silicon and copper because of the prolongation of time.
Embodiment
preparation embodiment
Table 1 gives the formula of chemical mechanical polishing liquid embodiment 1 ~ 28 of the present invention and comparative example 1 ~ 5,
By component listed in table 1 and content thereof, mix in deionized water, be transferred to required pH value by pH adjusting agent, can chemical mechanical polishing liquid be obtained.
Table 1 chemical mechanical polishing liquid embodiment 1 ~ 28 of the present invention and comparative example 1 ~ 5
effect example 1
Polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, polytex polishing pad, 4cm × 4cm square wafer (Wafer), grinding pressure 3psi, grinding stage rotating speed 70 revs/min, grinding head rotation rotating speed 150 revs/min, polishing fluid rate of addition 100ml/ minute.
Table 2 chemical mechanical polishing liquid effect example 1 ~ 18 of the present invention and comparative example 1 ~ 5
Shown by comparative example 1-5, under situation about existing only having abrasive material and alkaline condition, the removal speed of copper and silicon is all very low.
By embodiment 1-18 and comparative example 1-5 contrast, in polishing fluid, add halogen-containing oxygenant, organic amine, ethylenediamine tetraacetic acid (EDTA) (EDTA), after pH value regulator, the removal speed of alkalescence polishing liquid to copper and silicon is significantly improved.
Contrast discovery each other by embodiment 1-18, in the polishing fluid of alkalescence, increase halogen-containing oxygenant, organic amine, EDTA, one or more the concentration in pH value regulator, be all conducive to the removal speed improving copper and silicon.
effect example 2
Polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, polytex polishing pad, 4cm × 4cm square wafer (Wafer), grinding pressure 3psi, grinding stage rotating speed 70 revs/min, grinding head rotation rotating speed 150 revs/min, polishing fluid rate of addition 100ml/ minute.
Table 3 chemical mechanical polishing liquid effect example 2 and 3 of the present invention
Relatively can be found by embodiment in table 32 and 3, situation about existing when there being amino acid, the removal speed of copper and silicon can keep stable in the basic conditions, can not reduce along with the prolongation of time.
Claims (14)
1. the application of chemical mechanical polishing liquid in raising and stabilized copper and silicon polishing speed, described chemical mechanical polishing liquid contains: abrasive grains, halogen-containing oxygenant, organic amine and ethylenediamine tetraacetic acid (EDTA) (EDTA), and amino acid, described chemical mechanical polishing liquid has the pH value of alkalescence, and described organic amine is quadrol, piperazine or its composition.
2. application according to claim 1, described abrasive grains is SiO
2, Al
2o
3, ZrO
2, CeO
2, SiC, Fe
2o
3, TiO
2and/or Si
3n
4in one or more.
3. application according to claim 1, the mass percentage of described abrasive grains is 1% ~ 30%.
4. application according to claim 1, described halogen-containing oxygenant is one or more in potassium bromate, Potassium Iodate, Potcrate, Periodic acid and/or ammonium periodate.
5. application according to claim 1, the mass percentage of described halogen-containing oxygenant is 0.5% ~ 4%.
6. application according to claim 1, the mass percentage of described quadrol is 0.2% ~ 0.8%.
7. application according to claim 1, the mass percentage of described piperazine is 0% ~ 4%.
8. application according to claim 1, the mass percentage of described ethylenediamine tetraacetic acid (EDTA) (EDTA) is 0.01% ~ 6%.
9. application according to claim 1, also contains: pH value regulator, and described pH value regulator is quaternary ammonium hydroxide, mineral alkali or its composition.
10. application according to claim 9, described quaternary ammonium hydroxide is Tetramethylammonium hydroxide (TMAH).
11. application according to claim 9, described mineral alkali is potassium hydroxide (KOH).
12. application according to claim 1, described pH value is 8 ~ 13.
13. application according to claim 1, described amino acid be glycine or L ?L-glutamic acid.
14. application according to claim 1, described amino acid whose mass percentage is 1% ~ 8%.
Priority Applications (2)
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CN201010277685.6A CN102399494B (en) | 2010-09-10 | 2010-09-10 | Chemical mechanical polishing solution |
PCT/CN2011/001450 WO2012031452A1 (en) | 2010-09-10 | 2011-08-29 | Chemical mechanical polishing solution |
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CN201010277685.6A CN102399494B (en) | 2010-09-10 | 2010-09-10 | Chemical mechanical polishing solution |
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CN102399494B true CN102399494B (en) | 2014-12-31 |
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Families Citing this family (8)
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JP6053311B2 (en) * | 2012-04-17 | 2016-12-27 | 株式会社フジミインコーポレーテッド | Polishing composition used for polishing semiconductor substrate having through silicon via structure and polishing method using the polishing composition |
US9150759B2 (en) * | 2013-09-27 | 2015-10-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Chemical mechanical polishing composition for polishing silicon wafers and related methods |
CN106319521A (en) * | 2016-10-24 | 2017-01-11 | 马鞍山顺发机械制造有限公司 | Compound brightener for metal surface of automobile |
CN106833389A (en) * | 2017-01-10 | 2017-06-13 | 清华大学 | A kind of chemical-mechanical polishing compositions suitable for gallium arsenide wafer |
CN111378973A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子科技(上海)股份有限公司 | Chemical mechanical polishing solution and application thereof |
CN111378370B (en) * | 2018-12-28 | 2022-05-13 | 安集微电子科技(上海)股份有限公司 | Chemical mechanical polishing solution |
CN111378384A (en) * | 2018-12-28 | 2020-07-07 | 安集微电子科技(上海)股份有限公司 | Chemical mechanical polishing solution |
CN111378369B (en) * | 2018-12-28 | 2022-05-13 | 安集微电子科技(上海)股份有限公司 | Chemical mechanical polishing solution and application thereof |
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