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CN101493494B - Wafer testing method and system - Google Patents

Wafer testing method and system Download PDF

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CN101493494B
CN101493494B CN 200810003873 CN200810003873A CN101493494B CN 101493494 B CN101493494 B CN 101493494B CN 200810003873 CN200810003873 CN 200810003873 CN 200810003873 A CN200810003873 A CN 200810003873A CN 101493494 B CN101493494 B CN 101493494B
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李明聪
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King Yuan Electronics Co Ltd
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Abstract

本发明一种晶圆的测试方法与系统,提供至少一晶圆,而晶圆上具有多个晶粒,每个晶粒皆有各自晶粒状态;接着进行晶圆的测试,根据测试结果定义晶圆的边界晶粒,边界晶粒状态与预先设定值进行比较,决定是否发出信息,用以提示操作人员可能有地图偏移的情形。

Figure 200810003873

The present invention provides a wafer testing method and system, providing at least one wafer, wherein the wafer has a plurality of grains, each of which has its own grain state; then the wafer is tested, and the boundary grains of the wafer are defined according to the test results. The boundary grain states are compared with preset values to determine whether to issue a message to prompt an operator that a map offset may occur.

Figure 200810003873

Description

晶圆的测试方法与系统Wafer testing method and system

技术领域technical field

本发明涉及一种晶圆的测试方法与系统,特别是关于一种在晶圆针测(chip probe)过程中发生地图偏移情形的判断方法与系统。The present invention relates to a method and system for testing wafers, in particular to a method and system for judging the occurrence of map offset in the process of wafer probe (chip probe).

背景技术Background technique

集成电路(IC,integrated circuit)的生产流程是多层级的分工架构,包括了集成电路设计(IC design)、晶圆制造(wafer manufacturing)、晶圆针测(circuit probing)、封装(assembling)以及最终测试(finaltesting)。前述的生产分工中,晶圆针测与最终测试两道检测程序,都是确保产品质量的重要关卡。The production process of integrated circuit (IC, integrated circuit) is a multi-level division of labor structure, including integrated circuit design (IC design), wafer manufacturing (wafer manufacturing), wafer probing (circuit probing), packaging (assembling) and final testing. In the above-mentioned production division, the two inspection procedures of wafer needle inspection and final inspection are important checkpoints to ensure product quality.

一片晶圆上含有许多晶粒,这些晶粒通常被称为晶粒(die)但是并非所有的晶粒皆具有良好质量,因此晶圆针测的方法,是以很细的探针卡(probe card)或微小探针(fine-point needle)测试晶圆上的每一个晶粒,接着在不良的晶粒上标示记号或留存测试图(mapping file),用以分类良品与不良品。若未进行晶圆针测,直接在晶圆制造完成后进行切割与封装,则不良品的封装成本是非必要的浪费。因此晶圆针测这个步骤可以分类晶圆上的良品与不良品,以降低封装与后续测试的成本。A wafer contains many dies, these dies are usually called dies, but not all dies are of good quality, so the method of wafer needle measurement is to use a very fine probe card (probe) card) or fine-point needle to test each die on the wafer, and then mark the bad die or keep a test map (mapping file) to classify good and bad products. If wafer pinning is not carried out, and the wafer is cut and packaged directly after the wafer is manufactured, the packaging cost of defective products is unnecessary waste. Therefore, the step of wafer needle testing can classify good and bad products on the wafer to reduce the cost of packaging and subsequent testing.

晶圆针测中,是以机械视觉设备检测到起测点(first die),再依循预先设定的测试范围对晶粒逐一进行测试。在上述的方法中,若起测点未被正确找到,则测试范围会偏移,造成测试结果的错误,称的为地图偏移(map shift)。In wafer needle testing, the first die is detected by machine vision equipment, and then the dies are tested one by one according to the preset test range. In the above method, if the starting point is not found correctly, the test range will be shifted, causing errors in the test results, which is called map shift.

目前可以使用人工判断来解决此问题,以人工判断有否地图偏移现象,将每一个晶圆以人工目视的方法进行检查,此方法可以全面性的进行检查,需要有经验的技术人员方能有效操作,并且无法提出证据说明。At present, manual judgment can be used to solve this problem. Manually judge whether there is any map offset phenomenon, and inspect each wafer with manual visual inspection. This method can be comprehensively inspected and requires experienced technicians. It can be effectively operated, and no evidence can be produced.

较有效的解决方法是预先设定记号晶粒(marking die),此记号晶粒具有已知的晶粒状态,当记号晶粒的测试结果与已知的测试结果相异时,则判断起测点错误,发生地图偏移的问题。但此方法必须每项测试前预先设定记号晶粒,步骤增加的结果也会浪费时间,并且难以全面实施。A more effective solution is to pre-set the marking die. The marking die has a known die state. When the test result of the marked die is different from the known test result, it is judged that the test The point is wrong, and the problem of map offset occurs. However, this method must pre-set the marking grains before each test, and the result of increased steps will also waste time, and it is difficult to fully implement.

有鉴于以上缺失,本发明所提供的晶圆的测试方法与系统,乃针对现有技术加以改良。In view of the above deficiencies, the wafer testing method and system provided by the present invention are improved on the prior art.

发明内容Contents of the invention

基于解决上述现有技术的缺失,本发明的一目的在于提供一晶圆的测试方法与系统,用以判断晶圆的测试过程中是否有地图偏移的现象。Based on solving the above-mentioned shortcomings in the prior art, an object of the present invention is to provide a wafer testing method and system for determining whether there is a map offset phenomenon during the wafer testing process.

本发明所提供的晶圆的测试方法无需预先设记号晶粒,可增加测试效率。The testing method of the wafer provided by the present invention does not need to pre-design the marked crystal grains, which can increase the testing efficiency.

本发明的另一目的在于提供一晶圆的测试方法与系统,可以降低人力需求,减少时间并增加效率。Another object of the present invention is to provide a wafer testing method and system, which can reduce manpower requirements, reduce time and increase efficiency.

本发明的再一目的在于提供一晶圆的测试方法与系统,在地图偏移的情况发生时,发出信号以提示操作人员。Another object of the present invention is to provide a wafer testing method and system, which can send out a signal to prompt operators when map deviation occurs.

依据上述的目的,本发明首先提供一种晶圆的测试方法,是提供至少一晶圆,而晶圆上具有多个晶粒,每个晶粒皆有各自晶粒状态;接着进行晶圆的测试,根据测试结果定义晶圆的边界晶粒,边界晶粒状态与预先设定值进行比较,决定是否发出信息,用以提示操作人员。According to above-mentioned purpose, the present invention at first provides a kind of testing method of wafer, is to provide at least one wafer, and has a plurality of crystal grains on the wafer, and each crystal grain all has respective grain state; Carry out wafer then Test, define the boundary grains of the wafer according to the test results, compare the state of the boundary grains with the preset value, and decide whether to send a message to prompt the operator.

本发明接着提供一种晶圆的测试系统,是包括测试装置,用以测试晶圆,晶圆则包括了多个晶粒,每个晶粒都有各自晶粒状态;测试结果会经由定义装置定义出边界晶粒;利用选择装置或标示装置在边界晶粒中选择出标的晶粒;再利用运算装置判定是否发出信息。The present invention then provides a wafer testing system, which includes a testing device for testing the wafer, and the wafer includes a plurality of crystal grains, each of which has its own grain state; the test results will be passed through the definition device Define the boundary grains; use the selection device or the marking device to select the target grains in the boundary grains; and then use the computing device to determine whether to send information.

附图说明Description of drawings

图1是本发明的起测偏移示意图;Fig. 1 is a schematic diagram of starting offset of the present invention;

图2是本发明一较佳实施例的边界晶粒定义示意图;Fig. 2 is a schematic diagram of boundary grain definition of a preferred embodiment of the present invention;

图3是本发明一较佳实施例的判断地图偏移示意图;Fig. 3 is a schematic diagram of determining map offset in a preferred embodiment of the present invention;

图4是本发明一较佳实施例的判断地图偏移示意图;Fig. 4 is a schematic diagram of determining map offset in a preferred embodiment of the present invention;

图5是本发明一较佳实施例的判断地图偏移示意图;其中:Fig. 5 is a schematic diagram of determining map offset in a preferred embodiment of the present invention; wherein:

图5a是将边界晶粒Y分为左右两个相对群组;Figure 5a is to divide the boundary grain Y into two relative groups on the left and right;

图5b是将边界晶粒Y分为上下两个相对群组;Figure 5b divides the boundary grain Y into two relative groups, upper and lower;

图5c是将边界晶粒Y分为右上与左下两个相对群组;Figure 5c divides the boundary grain Y into two relative groups, upper right and lower left;

图5d是将边界晶粒Y分为左上与右下两个相对群组。FIG. 5d divides the boundary grains Y into two relative groups, the upper left and the lower right.

【主要元件符号说明】[Description of main component symbols]

1晶粒状态(可用)1 grain state (available)

3晶粒状态(短路)3 grain state (short circuit)

4晶粒状态(开路)4 grain state (open circuit)

100晶圆100 wafers

102晶粒102 grains

110测量范围110 measuring range

112测试图112 test pattern

Y边界晶粒Y boundary grain

Y1标的晶粒Y1 target die

A1-A4边界晶粒群组A1-A4 boundary grain group

具体实施方式Detailed ways

由于本发明是一种晶圆的测试方法与系统,其中所利用到的一些基本原理,属于该领域具有通常知识的人士所能轻易理解的,因此不再赘述。而以下文中所对照的图式,是表达与本发明特征相关的示意,并未亦不需要依据实际尺寸完整绘制,说明在先。Since the present invention is a wafer testing method and system, some basic principles utilized therein can be easily understood by those with ordinary knowledge in this field, and thus will not be repeated here. The diagrams compared below are schematic representations related to the features of the present invention, and are not and need not be completely drawn based on actual dimensions, and the description is given first.

首先,请参考图1所示,是根据本发明的一较佳实施例的示意图。如图1所示,先提供一晶圆,此晶圆在本实施例中为晶圆100,晶圆100中所包含的多个晶粒即为晶粒102。接着,以测试装置对晶圆100进行测试时,当起测点偏移而使测量范围110向右上方偏离时,则测试结果如图1中的测试图112所示,测试图112中的数字代表晶粒状态,其中晶粒状态1代表可用的晶粒,晶粒状态3代表晶粒短路(short),晶粒状态4代表晶粒开路(open)。在一般情况下,会先进行晶粒102的缺陷测试,当晶粒102的测试状态为开路或短路时,可统称为错误;或者当晶粒102的测试状态与预期状态不同时,亦可称为错误。First, please refer to FIG. 1 , which is a schematic diagram according to a preferred embodiment of the present invention. As shown in FIG. 1 , a wafer is firstly provided, which is a wafer 100 in this embodiment, and a plurality of dies included in the wafer 100 are dies 102 . Then, when the wafer 100 is tested with the testing device, when the measuring point shifts and the measurement range 110 deviates to the upper right, the test result is as shown in the test chart 112 in Figure 1, and the numbers in the test chart 112 Represents the grain state, wherein grain state 1 represents an available die, grain state 3 represents a die short circuit (short), and grain state 4 represents a die open circuit (open). Under normal circumstances, the defect test of the die 102 will be carried out first. When the test state of the die 102 is open circuit or short circuit, it can be collectively referred to as an error; or when the test state of the die 102 is different from the expected state, it can also be called an error. for error.

接着,如图2所示,是本发明用以判断边界晶粒的示意图。在本实施例中的任一晶粒X最多具有8个相邻晶粒,当测试结果中的某一晶粒102具有少于8个相邻晶粒时,则定义装置会判断此晶粒为边界晶粒Y。Next, as shown in FIG. 2 , it is a schematic diagram of the present invention for judging boundary grains. In this embodiment, any crystal grain X has at most 8 adjacent crystal grains, and when a certain crystal grain 102 in the test result has less than 8 adjacent crystal grains, the defining device will judge that this crystal grain is Boundary grain Y.

再接着,请参考图3,是本发明判断地图偏移的另一较佳实施例示意图。如图3所示,当定义出边界晶粒Y后,利用选择装置选择部分(或全部)的边界晶粒为标的晶粒Y1,利用运算装置计算标的晶粒Y1中的错误数量有否到达预先设定值,当错误数量到达预先设定值时,运算装置会发出一信号,表示可能有地图偏移的情形。Next, please refer to FIG. 3 , which is a schematic diagram of another preferred embodiment of determining map offset according to the present invention. As shown in Figure 3, after the boundary grain Y is defined, use the selection device to select part (or all) of the boundary grains as the target grain Y1, and use the computing device to calculate whether the number of errors in the target grain Y1 reaches the predetermined value. Set value, when the number of errors reaches the preset value, the computing device will send out a signal, indicating that there may be a situation where the map is shifted.

接着,请参考图4,是本发明判断地图偏移的再一较佳实施例示意图。如图4所示,当定义出边界晶粒Y后,利用分类装置将边界晶粒Y依所在位置分类为A1、A2、A3、A4等四个边界晶粒群组,利用运算装置计算一个或多个边界晶粒群组中的晶粒状态数量,当这些边界晶粒群组中的某些晶粒状态(例如开路、短路或其它代表不同电性的晶粒状态)数量到达预先设定值时,则运算装置会发出一信号,表示可能有地图偏移的情形。Next, please refer to FIG. 4 , which is a schematic diagram of another preferred embodiment of determining map offset in the present invention. As shown in Figure 4, when the boundary grain Y is defined, the boundary grain Y is classified into four boundary grain groups such as A1, A2, A3, and A4 according to the location by the classification device, and a computing device is used to calculate one or The number of grain states in a plurality of boundary grain groups, when the number of certain grain states (such as open circuit, short circuit or other grain states representing different electrical properties) in these boundary grain groups reaches a preset value , the computing device will send out a signal indicating that there may be a map offset.

根据本发明一较佳实施例,当定义出边界晶粒Y后,利用标示装置将不同边界方向的边界晶粒Y进行标示,此步骤可以利用计算机进行运算标示。如图5a-图5d所示,图5a是将边界晶粒Y分为左右两个相对群组、图5b是将边界晶粒Y分为上下两个相对群组、图5c是将边界晶粒Y分为右上与左下两个相对群组、图5d是将边界晶粒Y分为左上与右下两个相对群组;每一个边界晶粒可以属于多个不同的群组。接着使用一比较装置对部分或全部的相对群组进行错误率的比较,当错误率的差异到达一预先设定值时,发出一信号,此信号传递予警示装置,警示装置会以图形化信息显示,用以提醒操作人员可能有地图偏移的情形。According to a preferred embodiment of the present invention, after the boundary grains Y are defined, the boundary grains Y with different boundary directions are marked by a marking device, and this step can be calculated and marked by a computer. As shown in Figure 5a-Figure 5d, Figure 5a divides the boundary grain Y into left and right relative groups, Figure 5b divides the boundary grain Y into upper and lower relative groups, and Figure 5c divides the boundary grain Y Y is divided into two relative groups, the upper right and the lower left. FIG. 5d divides the boundary grain Y into two relative groups, the upper left and the lower right; each boundary grain can belong to multiple different groups. Then use a comparison device to compare the error rates of some or all of the relative groups. When the error rate difference reaches a preset value, a signal is sent, and the signal is transmitted to the warning device. The warning device will display graphical information Displayed to alert operators of possible map shifts.

综上所述,本发明提供了一种晶圆的测试方法与系统,此方法可以用来判断晶圆的测试过程中是否有地图偏移的现象,可以对所有进行测试的晶圆进行判断,并且无须增加人力负担。当系统判断出可能有地图偏移的现象时,可以进一步发出信号,提示操作人员检查起测点。In summary, the present invention provides a wafer testing method and system. This method can be used to determine whether there is a map offset phenomenon during the wafer testing process, and can judge all wafers under test. And without increasing the manpower burden. When the system judges that there may be a phenomenon of map offset, it can further send out a signal to prompt the operator to check the starting point.

显然地,依照上面实施例中的描述,本发明可能有许多的修正与差异。因此需要在其附加的权利要求项的范围内加以理解,除了上述详细的描述外,本发明还可以广泛地在其它的实施例中施行。上述仅为本发明的较佳实施例而已,并非用以限定本发明的申请专利范围;凡其它未脱离本发明所揭示的精神下所完成的等效改变或修饰,均应包含在下述申请专利范围内。Obviously, according to the description in the above embodiments, the present invention may have many modifications and differences. It is therefore to be understood, within the scope of the appended claims, that the invention may be practiced broadly in other embodiments than the foregoing detailed description. The above are only preferred embodiments of the present invention, and are not intended to limit the scope of the patent application of the present invention; all other equivalent changes or modifications that do not deviate from the spirit disclosed in the present invention should be included in the following patent applications within range.

Claims (9)

1.一种晶圆的测试方法,该测试方法的特征包含:1. A test method of wafer, the feature of this test method comprises: 提供至少一个晶圆,该晶圆包含多个晶粒;providing at least one wafer comprising a plurality of dies; 测试该晶圆上的该些晶粒;testing the dies on the wafer; 定义该晶圆的边界晶粒,是根据该晶圆的测试结果定义出该些边界晶粒;任一晶粒最多具有8个相邻晶粒,当测试结果中的某一晶粒具有少于8个相邻晶粒时,则定义装置会判断此晶粒为边界晶粒;Defining the boundary grains of the wafer is to define these boundary grains according to the test results of the wafer; any grain has at most 8 adjacent grains, when a certain grain in the test results has less than When there are 8 adjacent grains, the defining device will judge that this grain is a boundary grain; 选择多个边界晶粒为标的晶粒;以及selecting a plurality of boundary grains as target grains; and 执行一比较判断,当该些标的晶粒的错误数量达到一预先设定值时,发出一信号,表示可能有地图偏移的情形。A comparison judgment is performed, and when the number of errors of the target dies reaches a preset value, a signal is sent, indicating that there may be a situation of map offset. 2.如权利要求1所述的测试方法,其特征在于,该标的晶粒包含所有边界晶粒。2. The testing method according to claim 1, wherein the target grains include all boundary grains. 3.如权利要求1所述的测试方法,其特征在于,该标的晶粒包含部分边界晶粒。3. The testing method as claimed in claim 1, wherein the target grains comprise part of boundary grains. 4.一种晶圆的测试方法,该测试方法的特征包含:提供至少一个晶圆,该晶圆包含多个晶粒,该些晶粒具有各自的晶粒状态;测试该晶圆上的该些晶粒;定义该晶圆的边界晶粒,是根据该晶圆的测试结果定义出该些边界晶粒;任一晶粒最多具有8个相邻晶粒,当测试结果中的某一晶粒具有少于8个相邻晶粒时,则定义装置会判断此晶粒为边界晶粒;执行一分类程序,将该些边界晶粒分类为多个边界晶粒群组;以及执行一比较判断,当至少一边界晶粒群组的至少一晶粒状态到达一预先设定值时,发出一信号,表示可能有地图偏移的情形。4. A test method for a wafer, the test method is characterized by: providing at least one wafer, the wafer includes a plurality of crystal grains, and these crystal grains have respective grain states; test the wafer on the wafer These grains; defining the boundary grains of the wafer is to define these boundary grains according to the test results of the wafer; any grain has at most 8 adjacent grains, when a certain grain in the test results When a grain has less than 8 adjacent grains, the defining device will judge that the grain is a boundary grain; perform a classification procedure to classify these boundary grains into a plurality of boundary grain groups; and perform a comparison Judging, when the state of at least one grain of at least one boundary grain group reaches a preset value, a signal is sent to indicate that there may be a situation of map deviation. 5.如权利要求4所述的测试方法,其特征在于,依据边界晶粒所在位置将该些边界晶粒分类为多个边界晶粒群组。5. The testing method according to claim 4, wherein the boundary grains are classified into a plurality of boundary grain groups according to the positions of the boundary grains. 6.一种晶圆的测试方法,该测试方法的特征包含:6. A test method for a wafer, the feature of the test method comprising: 提供至少一个晶圆,该晶圆包含多个晶粒;providing at least one wafer comprising a plurality of dies; 测试该晶圆上的该些晶粒;testing the dies on the wafer; 定义该晶圆的边界晶粒,是根据该晶圆的测试结果定义出至少一侧无相邻晶粒的晶粒为边界晶粒;Defining the boundary grains of the wafer is to define grains without adjacent grains on at least one side as boundary grains according to the test results of the wafer; 标示该边界晶粒,是以至少一方向标记来标示该边界晶粒;marking the boundary grains is marking the boundary grains with at least one directional mark; 执行一分类程序,依该方向将该些边界晶粒分类为多个边界晶粒群组;以及performing a classification procedure to classify the boundary grains into a plurality of boundary grain groups according to the orientation; and 执行一比较判断,当具有相对方向的边界晶粒的错误比例差异到达一预先设定值时,发出一信号,表示可能有地图偏移的情形。A comparison judgment is performed, and when the error ratio difference of the boundary grains with opposite directions reaches a preset value, a signal is sent, indicating that there may be a situation of map offset. 7.一种晶圆的测试系统,该测试系统的特征包含:7. A wafer testing system, the testing system is characterized by: 一测试装置,用以测试晶圆,其中该晶圆包含多个晶粒;A testing device for testing a wafer, wherein the wafer includes a plurality of dies; 一定义装置,是根据该测试装置的测试结果定义出该晶圆的至少一边界晶粒;任一晶粒最多具有8个相邻晶粒,当测试结果中的某一晶粒具有少于8个相邻晶粒时,则定义装置会判断此晶粒为边界晶粒;A defining device is to define at least one boundary grain of the wafer according to the test result of the test device; any grain has at most 8 adjacent grains, and when a certain grain in the test result has less than 8 When there are two adjacent grains, the defining device will judge that this grain is a boundary grain; 一选择装置,用以选择该些边界晶粒为标的晶粒;以及a selection device for selecting the boundary grains as target grains; and 一运算装置,当该些标的晶粒的错误数量达到一预先设定值时,发出一信号,表示可能有地图偏移的情形。A computing device, when the number of errors of the target dies reaches a preset value, sends out a signal indicating that there may be a situation of map offset. 8.一种晶圆的测试系统,该测试系统的特征包含:8. A wafer testing system, the testing system is characterized by: 一测试装置,用以测试一晶圆,而该晶圆包含多个晶粒,该些晶粒具有各自的晶粒状态;A test device for testing a wafer, and the wafer includes a plurality of dies, the dies have respective die states; 一定义装置,是根据测该测试装置的测试结果定义出该晶圆的至少一边界晶粒;任一晶粒X最多具有8个相邻晶粒,当测试结果中的某一晶粒具有少于8个相邻晶粒时,则定义装置会判断此晶粒为边界晶粒;A definition device is to define at least one boundary grain of the wafer according to the test result of the test device; any grain X has at most 8 adjacent grains, when a certain grain in the test result has less When there are 8 adjacent crystal grains, the defining device will judge that this grain is a boundary grain; 一分类装置,用以将该些边界晶粒分类为多个边界晶粒群组;以及a classification device for classifying the boundary grains into a plurality of boundary grain groups; and 一运算装置,当至少一边界晶粒群组的至少一晶粒状态的数量到达一预先设定值时,发出一信号,表示可能有地图偏移的情形。An operation device, when the quantity of at least one grain state of at least one boundary grain group reaches a preset value, sends out a signal indicating that there may be a map offset situation. 9.一种晶圆的测试系统,该测试系统的特征包含:9. A wafer testing system, the testing system is characterized by: 一测试装置,用以测试晶圆,其中该晶圆包含多个晶粒;A testing device for testing a wafer, wherein the wafer includes a plurality of dies; 一定义装置,是根据测试结果,定义具有至少一侧无相邻晶粒的晶粒为边界晶粒;A defining device is to define a grain with at least one side without adjacent grains as a boundary grain according to test results; 一标示装置,用以于该边界晶粒标示至少一无相邻晶粒的方向;a marking device for marking at least one direction without adjacent grains on the boundary grain; 一分类装置,依该方向将所述边界晶粒分类为多个边界晶粒群组;以及a sorting device for sorting the boundary grains into a plurality of boundary grain groups according to the direction; and 一比较装置,当具有相对方向的边界晶粒的错误比例差异到达一预先设定值时,发出一信号,表示可能有地图偏移的情形。A comparison device, when the error ratio difference of the boundary grains with opposite directions reaches a preset value, a signal is sent out, indicating that there may be a map offset situation.
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