CN101471241B - Vacuum apparatus, vacuum processing system and pressure control method of vacuum chamber - Google Patents
Vacuum apparatus, vacuum processing system and pressure control method of vacuum chamber Download PDFInfo
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Abstract
本发明涉及真空装置、真空处理系统以及真空室的压力控制方法。在真空室中的闸阀的动作用空气的供给不足的情况下,也能防止闸阀急剧开放。在压力控制机构(201)中,在停止向汽缸(123)供给空气时,切换机械阀(121)的端口,气动阀(113)开放,外部气体通过真空泄漏用端口(109)、气体导入配管(111)及连通孔(107)逐渐流入真空状态的搬送室(3)内。搬送室(3)的压力控制是在确保汽缸(47)的动作用空气的状态下利用单向阀(103)以及缓冲罐(105)来进行的,因此,能够防止闸阀(7b)的急剧开放。
The invention relates to a vacuum device, a vacuum processing system and a pressure control method of a vacuum chamber. Even when the supply of air for the operation of the gate valve in the vacuum chamber is insufficient, the gate valve can be prevented from being suddenly opened. In the pressure control mechanism (201), when the supply of air to the cylinder (123) is stopped, the port of the mechanical valve (121) is switched, the pneumatic valve (113) is opened, and the external air passes through the vacuum leak port (109) and the gas introduction pipe. (111) and the communicating hole (107) gradually flow into the transfer chamber (3) in a vacuum state. The pressure control of the transfer chamber (3) is carried out by using the check valve (103) and the buffer tank (105) while ensuring the operating air of the cylinder (47), so that the sudden opening of the gate valve (7b) can be prevented .
Description
技术领域technical field
本发明涉及一种在真空条件下对例如平板显示器(FPD)用的玻璃基板或半导体晶片等被处理体进行等离子体处理等的真空装置、具备该真空装置的真空处理系统以及真空室的压力控制方法。The present invention relates to a vacuum device for performing plasma processing or the like on a target object such as a glass substrate for a flat panel display (FPD) or a semiconductor wafer under vacuum conditions, a vacuum processing system equipped with the vacuum device, and pressure control of a vacuum chamber method.
背景技术Background technique
在以液晶显示器(LCD)为代表的FPD和半导体元件的制造过程中,在真空条件下对被处理体实施蚀刻、成膜等各种处理。为了利用等离子体进行上述处理,使用一种具备可抽真空的真空处理室的真空处理系统。In the manufacturing process of FPDs and semiconductor devices represented by liquid crystal displays (LCDs), various processes such as etching and film formation are performed on objects to be processed under vacuum conditions. In order to perform the above-mentioned processing using plasma, a vacuum processing system having an evacuable vacuum processing chamber is used.
在真空处理系统中,设置有搬送室,其与作为用于处理被处理体的处理容器的真空处理室相邻,并具备向该真空处理室搬送被处理体的搬送装置。搬送室与真空处理室同样,通常情况下被保持在真空状态。为了在真空状态的搬送室与大气压状态下的真空处理系统外部之间进行被处理体的交接,具备能够切换真空状态与大气压状态的真空预备室(装载锁定室)。搬送室与真空预备室通过用于搬入搬出被处理体的开口部连通。在开口部设置闸阀(gate valve),于是搬送室与真空预备室之间被阻断。即,在将真空预备室切换成大气压的状态下,利用闸阀确保它与相邻的真空状态的搬送室之间的气密性。In the vacuum processing system, a transfer chamber is provided adjacent to a vacuum processing chamber as a processing container for processing an object to be processed, and includes a transfer device for transferring the object to be processed to the vacuum processing chamber. Like the vacuum processing chamber, the transfer chamber is normally kept in a vacuum state. In order to transfer objects to be processed between the transfer chamber in vacuum state and the outside of the vacuum processing system in atmospheric pressure state, a vacuum preparation chamber (load lock chamber) capable of switching between vacuum state and atmospheric pressure state is provided. The transfer chamber communicates with the vacuum preparation chamber through an opening for loading and unloading the object to be processed. A gate valve (gate valve) is installed in the opening, so that the transfer chamber and the vacuum preparation chamber are blocked. That is, in the state where the vacuum preparation chamber is switched to atmospheric pressure, the airtightness between it and the transfer chamber in the adjacent vacuum state is ensured by the gate valve.
利用从设有真空处理系统的工厂的空气供给源(空气压缩机)供给的动作用空气的压力来进行闸阀的开闭。具体来讲,闸阀利用动作用空气的压力,抵抗它与大气压状态的真空预备室之间的压力差,将搬送室内保持在真空状态。因此,如果发生停电等情况时,工厂用电下降或者停止,从空气供给源供给的空气变得不足,那么,动作用空气的压力就会下降,从而发生闸阀无法承受压力差而急剧开放的情况。如果闸阀急剧开放,那么,大气急速流入搬送室内,从而出现致使搬送室内的被处理体和构件发生破损这样的问题。The gate valve is opened and closed by the pressure of the operating air supplied from the air supply source (air compressor) of the factory equipped with the vacuum processing system. Specifically, the gate valve uses the pressure of the operating air to resist the pressure difference between it and the vacuum preparation chamber in the atmospheric pressure state, and maintains the transfer chamber in a vacuum state. Therefore, if the power consumption of the factory drops or stops due to a power outage, and the air supplied from the air supply source becomes insufficient, the pressure of the operating air will drop, and the gate valve will suddenly open due to the pressure difference. . If the gate valve is suddenly opened, air will rapidly flow into the transfer chamber, causing damage to the object to be processed and members in the transfer chamber.
发明内容Contents of the invention
在真空处理系统中,为了检测从空气供给源供给的空气出现不足和停止,在操作闸阀的空气供给路径上也具备压力开关和压力传感器。但是,由于压力传感器和压力开关根据电信号来检测空气压力的下降等,因此,存在例如在因停电供电停止的情况下无法使用的问题。In the vacuum processing system, a pressure switch and a pressure sensor are also provided on the air supply path that operates the gate valve in order to detect the shortage and stop of the air supply from the air supply source. However, since the pressure sensor and the pressure switch detect a drop in air pressure based on an electric signal, there is a problem that they cannot be used, for example, when the power supply is stopped due to a power failure.
本发明就是鉴于上述情况而产生的,其目的在于,提供一种即使在真空室的闸阀的动作用空气的供给不足的情况下也能防止闸阀急剧开放的真空装置。The present invention was made in view of the above circumstances, and an object of the present invention is to provide a vacuum device capable of preventing the gate valve from suddenly opening even when the supply of air for operating the gate valve in the vacuum chamber is insufficient.
本发明的真空装置,其具有利用从气体供给源供给的动作用气体而动作的闸阀、和利用所述闸阀维持真空状态的真空室。该真空装置具备具有:为向上述真空室内导入外部气体而贯通形成于该真空室的壁的连通孔;一端侧与上述连通孔连接,在另一端侧形成真空泄漏用端口的配管;和设置于上述配管,利用第1控制用气体进行开闭而切换来自上述真空泄漏用端口的外部气体的导入的第1开闭机构,上述第1开闭机构,在上述第1控制用气体的供给压力成为规定压力以下时开放,而从上述真空泄漏用端口向上述真空室导入外部气体。本发明的真空装置还可以在从上述气体供给源至上述闸阀的上述动作用气体的供给路径的途中,还具备单向阀。The vacuum device of the present invention includes a gate valve operated by an operating gas supplied from a gas supply source, and a vacuum chamber maintained in a vacuum state by the gate valve. The vacuum device has: a communication hole formed through the wall of the vacuum chamber to introduce external air into the vacuum chamber; one end side is connected to the communication hole, and a pipe for vacuum leakage is formed on the other end side; The piping is opened and closed by the first control gas to switch the introduction of the outside air from the vacuum leak port. The first opening and closing mechanism operates when the supply pressure of the first control gas becomes It is opened when the pressure is lower than a predetermined pressure, and outside air is introduced into the vacuum chamber from the vacuum leak port. The vacuum device of the present invention may further include a check valve in the middle of the supply path of the operating gas from the gas supply source to the gate valve.
另外,在本发明的真空装置中,上述第1控制用气体也可以是利用在比上述单向阀更靠近上述气体供给源的位置处从上述动作用气体的供给路径分支的供给路径被供给的,并且与上述动作用气体为同一系统的气体。In addition, in the vacuum device of the present invention, the first control gas may be supplied through a supply path branched from the supply path of the operating gas at a position closer to the gas supply source than the check valve. , and it is the gas of the same system as the above-mentioned gas for action.
本发明的真空装置也可在上述真空装置,在上述动作用气体的供给路径中,在比上述单向阀更靠近上述闸阀的位置上还具备预先储存上述动作用气体的缓冲罐。The vacuum device of the present invention may further include a buffer tank for preliminarily storing the operating gas in the vacuum device at a position closer to the gate valve than the check valve in the supply path of the operating gas.
本发明的真空装置还可具备控制上述第1开闭机构的开闭的开闭控制部,上述开闭控制部具备:切换对上述第1开闭机构的上述第1控制用气体的供给或阻断的第2开闭机构;和利用与上述动作用气体为同一系统的第2控制用气体进行动作,而进行上述第2开闭机构的切换的致动器,上述致动器,在上述第2控制用气体的供给压力成为规定的压力以下时,对上述第2开闭机构进行切换而阻断对上述第1开闭机构的上述第1控制用气体的供给。The vacuum device of the present invention may further include an opening and closing control unit that controls opening and closing of the first opening and closing mechanism, and the opening and closing control unit includes: switching supply or blocking of the first control gas to the first opening and closing mechanism. The second opening and closing mechanism that is disconnected; and the actuator for switching the second opening and closing mechanism by using the second control gas that is in the same system as the above-mentioned operating gas, and the actuator is in the above-mentioned first 2. When the supply pressure of the control gas falls below a predetermined pressure, the second opening and closing mechanism is switched to block the supply of the first control gas to the first opening and closing mechanism.
在本发明的真空装置中,上述开闭控制部还可以具备,设置在上述致动器和上述第2开闭机构之间,利用加载力调节上述第2开闭机构的切换时机的加载部件。In the vacuum device according to the present invention, the opening/closing control unit may further include an urging member provided between the actuator and the second opening/closing mechanism for adjusting switching timing of the second opening/closing mechanism using an urging force.
本发明的真空装置也可以在上述真空泄漏用端口连接不活泼气体供给源。In the vacuum apparatus of the present invention, an inert gas supply source may be connected to the above-mentioned vacuum leak port.
本发明的真空处理系统是在真空状态下对被处理体进行规定处理的真空处理系统,其具备上述真空装置。The vacuum processing system of the present invention is a vacuum processing system for performing predetermined processing on an object to be processed in a vacuum state, and includes the vacuum device described above.
在本发明的真空处理系统中,上述真空室也可以是向对被处理体实施规定处理的真空处理室搬送被处理体的真空搬送室。或者上述真空室也可以是为了将被处理体搬入搬出真空处理系统而能够切换大气压开放状态和真空状态的真空预备室。In the vacuum processing system of the present invention, the vacuum chamber may be a vacuum transfer chamber for transferring the object to be processed to a vacuum processing chamber for performing a predetermined process on the object to be processed. Alternatively, the vacuum chamber may be a vacuum preparation chamber that can be switched between an atmospheric pressure release state and a vacuum state for loading and unloading an object to be processed into and out of the vacuum processing system.
本发明的真空处理系统也可以是对被处理体进行等离子体处理的等离子体处理系统。The vacuum processing system of the present invention may be a plasma processing system for performing plasma processing on an object to be processed.
本发明的真空室的压力控制方法是一种在具有利用从气体供给源供给的动作用气体而动作的闸阀、和利用上述闸阀维持真空状态的真空室的真空装置中,对上述真空室的压力进行控制的真空室的压力控制方法。在本发明的真空室的压力控制方法中,上述真空装置具备:向上述真空室导入外部气体的连通孔;一端侧与上述连通孔连接,在另一端侧形成真空泄漏用端口的配管;设置于上述配管并利用第1控制用气体进行开闭而切换来自上述真空泄漏用端口的外部气体的导入的第1开闭机构;和设置在从上述气体供给源至上述闸阀的上述动作用气体的供给路径的途中的单向阀,在使上述真空室为真空的状态下,当从上述气体供给源供给的动作用气体的压力下降时,利用上述单向阀防止上述动作用气体的逆流,并开放上述第1开闭机构而从上述真空泄漏用端口向上述真空室导入外部气体,使上述真空室的压力接近大气压。The pressure control method of a vacuum chamber of the present invention is a method for controlling the pressure of the vacuum chamber in a vacuum device having a gate valve operated by an operating gas supplied from a gas supply source, and a vacuum chamber maintained in a vacuum state by the gate valve. A pressure control method for a controlled vacuum chamber. In the method for controlling the pressure of a vacuum chamber according to the present invention, the vacuum device includes: a communication hole for introducing external air into the vacuum chamber; a pipe having one end connected to the communication hole and forming a vacuum leak port at the other end; The piping is opened and closed by the first control gas to switch the introduction of the outside air from the vacuum leak port; and the supply of the operating gas from the gas supply source to the gate valve is provided. The check valve in the middle of the path is opened to prevent the reverse flow of the operating gas by the check valve when the pressure of the operating gas supplied from the gas supply source drops while the vacuum chamber is evacuated. The first opening/closing mechanism introduces outside air into the vacuum chamber from the vacuum leak port to bring the pressure of the vacuum chamber close to atmospheric pressure.
在本发明的真空室的压力控制方法中,在上述动作用气体的供给路径中,在比上述单向阀更靠近上述闸阀的位置上,设置预先储存上述动作用气体的缓冲罐,以确保上述动作用气体。In the pressure control method of the vacuum chamber of the present invention, in the supply path of the above-mentioned operation gas, a buffer tank for storing the above-mentioned operation gas in advance is provided at a position closer to the gate valve than the above-mentioned one-way valve, so as to ensure the above-mentioned pressure. Action gas.
在本发明的真空室的压力控制方法中,上述第1控制用气体是与上述动作用气体同一系统的气体,是利用在比上述单向阀更靠近上述气体供给源的位置处从上述动作用气体的供给路径分支的供给路径被供给的;在上述第1控制用气体的供给压力成为规定的压力以下时,开放上述第1开闭机构而从上述真空泄漏用端口向上述真空室导入外部气体。In the method for controlling the pressure of a vacuum chamber according to the present invention, the first control gas is a gas of the same system as the operating gas, and is used from a position closer to the gas supply source than the one-way valve from the operating gas. When the supply path of the gas is branched, the supply path is supplied; when the supply pressure of the first control gas becomes equal to or lower than a predetermined pressure, the first opening and closing mechanism is opened to introduce external air from the vacuum leak port to the vacuum chamber. .
在本发明的真空室的压力控制方法中,上述真空装置还具备控制上述第1开闭机构的开闭的开闭控制部,上述开闭控制部具备:切换对上述第1开闭机构的上述第1控制用气体的供给或阻断的第2开闭机构;和利用与上述动作用气体为同一系统的第2控制用气体进行工作,而进行上述第2开闭机构的切换的致动器,在上述第2控制用气体的供给压力成为规定的压力以下时,对上述致动器进行切换而阻断对上述第1开闭机构的上述第1控制用气体的供给,开放上述第1开闭机构而从上述真空泄漏用端口向上述真空室导入外部气体。In the pressure control method of the vacuum chamber of the present invention, the vacuum device further includes an opening and closing control unit that controls the opening and closing of the first opening and closing mechanism, and the opening and closing control unit includes: switching the opening and closing of the first opening and closing mechanism. A second opening and closing mechanism for supplying or blocking the first control gas; and an actuator for switching the second opening and closing mechanism by operating with the second control gas in the same system as the operating gas When the supply pressure of the second control gas is below a predetermined pressure, the actuator is switched to block the supply of the first control gas to the first opening and closing mechanism, and the first opening and closing mechanism is opened. The closing mechanism is used to introduce external air into the vacuum chamber from the vacuum leak port.
在本发明的真空室的压力控制方法中,也可在上述致动器和上述第2开闭机构之间设置加载部件,利用该加载部件调节上述第2开闭机构的切换时机。In the pressure control method of the vacuum chamber of the present invention, an urging member may be provided between the actuator and the second opening and closing mechanism, and the switching timing of the second opening and closing mechanism may be adjusted by the urging member.
在本发明的真空室的压力控制方法中,从上述真空泄漏用端口导入的外部气体也可以是不活泼气体。In the method for controlling the pressure of a vacuum chamber according to the present invention, the outside air introduced from the vacuum leak port may be an inert gas.
根据本发明的真空装置,在停止从气体供给源供给空气等气体的情况下,可以开放第1开闭机构,然后从真空泄漏用端口向真空室内逐渐地导入外部气体。因此,由闸阀维持真空状态的真空室的内外压力差得以缓和,能够防止发生闸阀急剧开放的状况。因此,它具有能够防止因闸阀的急剧开放导致真空室内的被处理体和机械材料受到损坏等的效果。According to the vacuum device of the present invention, when the supply of gas such as air from the gas supply source is stopped, the first opening and closing mechanism can be opened, and then the outside air can be gradually introduced into the vacuum chamber through the vacuum leak port. Therefore, the pressure difference between the inside and outside of the vacuum chamber maintained in a vacuum state by the gate valve is reduced, and it is possible to prevent the gate valve from suddenly opening. Therefore, it has the effect of preventing the object to be processed and mechanical materials in the vacuum chamber from being damaged due to sudden opening of the gate valve.
在本发明的真空装置中,利用第1控制用气体来控制第1开闭机构的开闭。于是,由于第1开闭机构的开闭不需要电力,因此,即使在因停电等原因动作用空气的供给停止的情况下,也能发挥第1开闭机构的功能。在这一点上,与使用在供电停止的情况下无法工作的压力传感器和压力开关等电气仪器的情况相比,本发明更为理想。In the vacuum apparatus of the present invention, the opening and closing of the first opening and closing mechanism is controlled by the first control gas. Therefore, since the opening and closing of the first opening and closing mechanism does not require electric power, the function of the first opening and closing mechanism can be exhibited even when the supply of operating air is stopped due to a power failure or the like. In this regard, the present invention is more preferable than the case of using electrical devices such as a pressure sensor and a pressure switch that cannot operate when the power supply is stopped.
附图说明Description of drawings
图1是真空处理系统的概略立体图。FIG. 1 is a schematic perspective view of a vacuum processing system.
图2是图1的真空处理系统的平面图。FIG. 2 is a plan view of the vacuum processing system of FIG. 1 .
图3是表示闸阀开放状态的剖面图。Fig. 3 is a cross-sectional view showing an open state of the gate valve.
图4是表示闸阀封闭状态的剖面图。Fig. 4 is a sectional view showing a closed state of the gate valve.
图5是说明本发明的第1实施方式的压力控制机构构造的示意图。Fig. 5 is a schematic diagram illustrating the structure of the pressure control mechanism according to the first embodiment of the present invention.
图6是说明本发明的第2实施方式的压力控制机构构造的示意图。Fig. 6 is a schematic diagram illustrating the structure of a pressure control mechanism according to a second embodiment of the present invention.
图7是说明机械阀开启状态的示意图。Fig. 7 is a schematic diagram illustrating an open state of a mechanical valve.
图8是说明机械阀关闭状态的示意图。Fig. 8 is a schematic diagram illustrating a closed state of the mechanical valve.
图9是说明本发明的第3实施方式的压力控制机构的构造例子的示意图。FIG. 9 is a schematic diagram illustrating a structural example of a pressure control mechanism according to a third embodiment of the present invention.
图10是说明本发明的第3实施方式的压力控制机构的其它构造例子的示意图。10 is a schematic diagram illustrating another structural example of the pressure control mechanism according to the third embodiment of the present invention.
susceptor符号说明susceptor symbol description
1a、1b、1c、加工腔室 2、基座 3、搬送室1a, 1b, 1c, processing
5、装载锁定室 7b、闸阀 47、汽缸 100真空处理系统5.
101、空气供给配管 103、单向阀 105、缓冲罐101.
107、连通孔 109、真空泄漏用端口 111、气体导入配管107.
113、气动阀 115、控制用空气配管 121、机械阀113.
123、汽缸 125、弹簧 127、大气开放口123.
131、N2供给源 300、空气供给源 S、基板131, N2
具体实施方式Detailed ways
下面,参照附图对本发明的实施方式进行详细的说明。在此,以具备本发明第1实施方式的真空装置的基板处理系统为例进行说明。图1是作为基板处理系统的真空处理系统100的概略立体图,图2是打开各个腔室的盖体(图示省略)的状态下内部的概略平面图。该真空处理系统100形成具有若干加工腔室1a、1b、1c的多腔室构造。真空处理系统100构成例如对FPD用的玻璃基板(以下简称“基板”)S进行等离子体处理的等离子体处理系统。此外,作为FPD可以列举液晶显示器(LCD)、有机电致发光(Electro luminescence:EL)显示器、等离子体显示面板(PDP)等。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Here, a substrate processing system including the vacuum apparatus according to the first embodiment of the present invention will be described as an example. FIG. 1 is a schematic perspective view of a
在真空处理系统100中,若干大型腔室连结成十字形状。在中央部配置搬送室3,与其三个侧面相邻配设用于对基板S进行等离子体处理的三个加工腔室1a、1b、1c。另外,与搬送室3其余的一个侧面相邻配设装载锁定室5。三个加工腔室1a、1b、1c、搬送室3以及装载锁定室5均构成真空腔室。在搬送室3与各个加工腔室1a、1b、1c之间设置图中未示的开口部,在该开口部分别配设具有开闭功能的闸阀7a。另外,在搬送室3与装载锁定室5之间配设闸阀7b。闸阀7a、7b在关闭状态下气密密封各个腔室间,在打开状态下使腔室间相互连通,从而能够搬送基板S。在装载锁定室5与外部大气之间也具备闸阀7c,在关闭状态下,保持装载锁定室5的气密性,在打开状态下能够在装载锁定室5内与外部之间搬送基板S。In the
在装载锁定室5的外侧设置两个盒分度器9a、9b。在各个盒分度器9a、9b上分别载放容纳基板S的盒11a、11b。在各个盒11a、11b内,基板S在垂直方向上被隔开间隔配置多层。各个盒11a、11b可分别通过升降机构部13a、13b自由升降。在本实施方式中,例如,在盒11a中容纳未处理的基板S,在另一方盒11b中容纳处理完毕的基板S。Outside the
在两个盒11a、11b之间设置用于搬送基板S的搬送装置5。该搬送装置5具备上下两段设置的作为基板保持具的叉车17a及叉车17b、按照能够进出、退避以及旋转的方式支承叉车17a、叉车17b的动作部19、以及支承该动作部19的支承台21。A
加工腔室1a、1b、1c按照能够使其内部空间维持在规定减压氛围(真空状态)的方式构成。如图2所示,在各个加工腔室1a、1b、1c内具备作为载放基板S的载放台的基座2。在各个加工腔室1a、1b、1c中,在将基板S载放在基座2上的状态下,例如在真空条件下对基板S实施蚀刻处理、灰化处理、成膜处理等各种等离子体处理。The
在本实施方式中,既可以在三个加工腔室1a、1b、1c中进行相同种类的处理,也可以在每个加工腔室中进行不同种类的处理。再者,加工腔室的数量并非局限于三个,也可以是四个以上。In this embodiment, the same type of processing may be performed in the three
搬送室3与作为真空处理室的加工腔室1a~1c同样,是采用能够保持为规定减压氛围构造的真空室。如图2所示,在搬送室3中配设搬送装置23。搬送装置23具备能够旋转,并进出、退避从而搬送基板S的梳齿状的叉车25。利用搬送装置23在三个加工腔室1a、1b、1c以及真空锁5之间搬送基板S。搬送装置23具备设置为上下两段的搬送机构,它们能够分别独立地搬入搬出基板S。The
作为真空预备室的装载锁定室5与加工腔室1a~1c以及搬送室3同样,采用能够将其保持在规定减压氛围的构造。装载锁定室5用于在处于大气压状态的盒11a、11b与减压状态的搬送室3之间进行基板S的授受。装载锁定室5,由于重复大气压状态与减压状态的原因,极力使其容积构成很小。在装载锁定室5中在上下两段设置有基板收容部27(在图2中仅表示上段),在各个基板收容部27中隔开间隔设置支承基板S的若干缓冲器28。这些缓冲器28的间隔成为梳齿状叉车(例如叉车25)的间隙槽。此外,在装载锁定室5内,与矩形基板S的相向角部附近接触设置进行定位的定位器29。The
如图2所示,真空处理系统100的各个构成部分与控制部30连接并受其控制(在图1中省略图示)。控制部30具有,具备CPU的控制器31、用户接口32和存储部33。控制器31在真空处理系统100中统筹控制例如加工腔室1a~1c、搬送装置15、搬送装置23等的各个构成部分。用户接口32由加工管理者为了管理真空处理系统100而进行指令输入操作等的键盘、显示真空处理系统100工作情况的显示器等构成。在存储部33中保存着记录了用于在控制器31的控制下实现在真空处理系统100中运行的各种处理的控制程序(软件)和处理条件数据等的策略。用户接口32以及存储部33与控制器31连接。As shown in FIG. 2 , each component of the
而且,根据需要,根据从用户接口32发出的指示等从存储部33中读取任意的策略,然后在控制器31中运行,于是在控制器31的控制下,在真空处理系统100中实施所希望的处理。And, according to the need, according to the instructions issued from the user interface 32, etc., read any strategy from the
上述控制程序和处理条件数据等的策略可以使用被保存在计算机能够读取的存储介质例如CD-ROM、硬盘、软盘、闪存等中的策略。或者也可以从其它装置例如通过专用线路随时传送在线使用上述策略。As the strategies for the control program and processing condition data described above, strategies stored in a computer-readable storage medium such as CD-ROM, hard disk, floppy disk, flash memory, etc. may be used. Alternatively, the policy described above can be used online at any time from another device, for example via a dedicated line.
下面,对上述构造的真空处理系统100的动作进行说明。Next, the operation of the
首先,对搬送装置15的两个叉车17a、17b进退驱动,从容纳着未处理基板的盒11a获取基板S,并将其分别载放在装载锁定室5上下两段的基板收容部27的缓冲器28。First, the two
使叉车17a、17b退后,然后关闭装载锁定室5大气侧的闸阀7c。之后,对装载锁定室5内进行排气,将其内部减压至规定的真空度。接着,打开搬送室3与装载锁定室5之间的闸阀7b,利用搬送装置23的叉车25获取容纳在装载锁定室5的基板收容部27中的基板S。After the
接着,利用搬送装置23的叉车25将基板S搬入加工腔室1a、1b、1c的任何一者,并放置在基座2上。接着,在加工腔室1a、1b、1c内对基板S实施蚀刻等规定的处理。然后,从基座2将处理完毕的基板S交给搬送装置23的叉车25,并从加工腔室1a、1b、1c中搬出。Next, the substrate S is carried into any one of the
基板S按照与上述相反的路径经由装载锁定室5,利用搬送装置15收纳在盒11b中。而且,也可以将处理完毕的基板S送回原来的盒11a中。The substrate S passes through the
下面,参照图3以及图4,对在搬送室3与装载锁定室5之间配置的闸阀7b的构造和动作进行简单的说明。闸阀7b从搬送室3侧开闭设在装载锁定室5的侧壁5a上的基板搬入搬出口5b。在此,闸阀7b,和作为利用该闸阀7b维持真空状态的真空室的搬送室3构成本实施方式的真空装置。为了能够关闭可在水平姿势下搬入搬出基板S的基板搬入搬出口5b,闸阀7b具有横长的阀体41、支承该阀体41的连杆43a、43b、通过这些连杆43a、43b与阀体41联结的能够升降的横长的可动块45。连杆43a、43b被分别架设在可动块45的左侧面与阀体41的左侧面之间、以及可动块45的右侧面与阀体41的右侧面之间(此外,在图3以及图4中,仅表示左侧面的连杆43a、43b)。Next, the structure and operation of the
闸阀7b具备,用于提供使可动块45上下移位的驱动力的汽缸47、以及引导可动块45的沿着垂直方向配置的导轨49。在该导轨49的上端部设置与可动块45的上面接触从而使可动块45停止的停止器51。另外,在阀体41的上面设有用于避免与顶部53摩擦的旋转体(滚子55)。The
可动块45与汽缸47的活塞47a联结,并且根据活塞47a的进退而上下移位。于是,该可动块45被引导着在垂直配置的导轨49上滑动。即,在使汽缸47动作而使活塞47a上下进出、退避时,可动块45在导轨49的引导下沿着垂直方向升降移动。因此,借助可动块45、连杆43a、43b,与活塞47a联结的阀体41也上下移位,从而封闭基板搬入搬出口5b,或者解除基板搬入搬出口5b的封闭。当闸阀7b打开时,如图3所示,阀体41位于比基板搬入搬出口5b低的待机位置,可动块45在比阀体41更低的待机位置待机。The
在从图3所示的打开状态关闭闸阀7b的情况下,使汽缸47动作而使活塞47a以规定的冲程前进(上升)。于是,如图4所示,可动块45与阀体41分别从原位置相互平行地垂直上升,阀体41的滚子55与顶面53接触,接着,可动块45与停止器51接触。然后,连杆43a、43b动作,使阀体41朝着基板搬入搬出口5b的方向压出,并推至基板搬入搬出口5b的周围(侧壁)。在此操作时,滚子55在顶面53上沿着水平方向移动,于是,阀体41顺利地水平移动。由于在基板搬入搬出口5b的周围安装O形环等密封部件(图中未示),因此,阀体41具有高气密性,能够密封基板搬入搬出口5b。当闸阀7b处于关闭状态时,装载锁定室5内处于大气压状态,搬送室3处于真空状态。即,阀体41从真空侧抵抗大气压密封基板搬入搬出口5b。When the
当从图4所示的关闭状态打开闸阀7b时,使汽缸47动作而使活塞47a与关闭时相同的冲程而下降。由此,利用与封闭过程的动作相反的动作,可动块45及阀体41分别返回原来的待机位置,基板搬入搬出口5b的封闭被解除。When the
对闸阀7b进行开闭驱动的汽缸47用从作为设置真空处理系统100的整个工厂的一部分动力的空气供给源供给的动作用空气工作。空气供给源并非仅被分配给闸阀7b,也被分配给真空处理系统100内的其它装置和外部系统。因此,如果因任何状况例如工厂内空气需求激增、停电、空气压缩机发生故障等原因,动作用空气的供给停止或者减少,那么,有时就无法保持闸阀7b的关闭状态。The
如果驱动汽缸47的动作用空气的供给停止或者减少,那么,阀体41及可动块45无法承受大气压的压力,阀体41从基板搬入搬出口5b脱离,同时,可动块45下降,基板搬入搬出口5b打开。接着,空气从大气压的装载锁定室5急剧进入真空的搬送室3中。由于上述这种急剧的压力变动以及空气流入产生的冲击足以使搬送室3内的基板S和搬送装置23发生损坏。If the supply of air for the operation of the
图5表示本实施方式的真空处理系统100中压力控制机构200的构造。在真空处理系统100中,在从空气供给源300供给的动作用空气停止供给或者下降的情况下,为防止发生闸阀7b急剧开放这种情况而设置压力控制机构200。参照图5对该压力控制机构200进行说明。FIG. 5 shows the structure of the pressure control mechanism 200 in the
在从空气供给源300供给的动作用空气通知供给或者下降的情况下,压力控制机构200使闸阀7b维持规定时间封闭状态,同时,使真空侧的搬送室3内的压力升高,减轻其与装载锁定室5内的压力差。压力控制机构200具有:与闸阀7b连接并设置在将来自空气供给源300的动作用空气供给至闸阀7b的汽缸47的空气供给配管101上的单向阀103;和配置在该单向阀103的空气供给方向的下流侧的空气供给配管101上的缓冲罐105。When the operating air supplied from the
另外,压力控制机构200具有:附属于搬送室3并在搬送室3的壁(例如底壁3a)上贯通形成的连通孔107;一端与该连通孔107连接,另一端具有形成真空泄漏端口109的狭窄流路的气体导入配管111;以及作为开闭该气体导入配管111流路的第1开闭机构的气动阀113。气动阀113与控制用空气配管115连接,利用经由该控制用空气配管115供给的作为第1控制用气体的第1控制用空气,对气动阀113的开闭进行控制。In addition, the pressure control mechanism 200 has: a
设在空气供给配管101上的单向阀103,例如在因停电等原因空气供给源300停止工作而截止了动作用空气的供给的情况下,防止空气从相对正压的闸阀7b侧向负压的空气供给源300侧逆流。此外,在单向阀103的空气供给路径下流侧设置储存规定量空气的缓冲罐105,这样就能确保按照规定时间继续驱动闸阀7b的汽缸47所需的空气量。由此,单向阀103与缓冲罐105发挥如下功能,即,在来自空气供给源300的动作用空气的供给截止的情况下相互协作来确保动作用空气,尽可能长时间地维持闸阀7b的密封状态。因此,例如在来自空气供给源300的动作用空气的供给短时间停止等情况下,能够利用单向阀103来防止空气的逆流,同时,使用被储存在缓冲罐105内的动作用空气来维持闸阀7b的密封状态。The
下面,对设在搬送室3的连通孔107与气体导入配管111以及气动阀113的作用进行说明。连通孔107是形成于搬送室3底壁3a的贯通孔。而且,贯通孔107也可以形成于搬送室3的侧壁。连通孔107与气体导入配管111相连。Next, actions of the
气体导入配管111具备狭窄的流路,并且具有大的流路阻抗。在气体导入配管111的途中配设气动阀113。另外,在气体导入配管111的另一端形成导入外部气体的真空泄漏用端口109。即,连通孔107经由气体导入配管111与真空泄漏用端口109连接,由气体导入配管111形成的流路由气动阀113控制开闭。The
气动阀113是常开阀,其根据经由控制用空气配管115供给的第1控制用空气而动作。气动阀113,在经由控制用空气配管115供给的第1控制用空气的供给为规定压力以上的期间,维持关闭状态。控制用空气配管115是供给驱动闸阀7b的汽缸47的动作用空气的空气供给配管101的分支。即,上述第1控制用空气与上述动作用空气是从同一空气供给源300供给的同一系统的空气。控制用空气配管115在单向阀103的空气供给方向的上流侧从空气供给配管101分支。The
如上所述,由控制用空气配管115供给的第1控制用空气,与驱动闸阀7b的汽缸47的动作用空气是同一系统的空气,因此,在供给动作用空气的期间,第1控制用空气的供给也继续进行。但是,例如,如果因停电等原因发生从空气供给源300供给的动作用空气停止或者减少供给的情况,那么,第1控制用空气的供给也停止或者减少。如果上述第1控制用空气成为规定压力以下例如0.1Mpa以下,那么,气动阀113切换至打开状态。As described above, the first control air supplied from the
在气动阀113打开时,从真空泄露用端口109,经由气体导入配管111及连通孔107,知道搬送室3内成为连通的状态。气体导入配管111设定为大的流路阻抗。例如,按照以下方式设定,当搬送室3的容积为12立方米,真空时内部压力为1Pa的情况下气动阀113开放时,使搬送室3内在大致用1.5~2小时的时间内成为大气压。When the
如上所述,在因停电等原因,从空气供给源300供给的空气停止或者减少供给时,气动阀113开放,大气等外部气体就会通过真空泄漏用端口109、气体导入配管111以及连通孔107逐渐流入真空状态的搬送室3内。接着,由于外部气体的导入,真空状态的搬送室3内的压力逐渐接近大气压,因此,从大气压的装载锁定室5侧施加在闸阀7b的阀体41上的压力逐渐得以缓和。As described above, when the supply of air from the
如上所述,在本实施方式中,在从空气供给源300供给的空气停止供给的情况下,可以利用单向阀103与缓冲罐105来确保用于维持闸阀7b当前关闭状态所需的空气(即,驱动汽缸47所需的空气)。在此状态下,开放与搬送室3连接的气动阀113,将外部气体从流路阻抗大的狭窄的气体导入配管111逐渐地导入真空状态的搬送室3内,因此,使装载锁定室5与搬送室3之间的压力差得以缓和,从而能够防止发生闸阀7b急剧开放的状况。因此,其效果是,即使在停止供给用于使闸阀7b动作的动作用空气的情况下,也能防止发生因闸阀7b的急剧开放所引起的基板S和搬送装置23的破损等情况。As described above, in the present embodiment, when the supply of air from the
另外,压力控制机构200利用与闸阀7b的动作用空气同一系统(相同的空气供给源300)的第1控制用空气来控制气动阀113的开闭,它是不用电的机构。因此,即使在因停电等原因动作用空气的供给停止的情况下,压力控制机构200也能发挥作用。从这一点来看,与在空气供给配管101中具备在停止供电的情况下无法操作的压力传感器和压力开关等电气机构的情况相比,压力控制机构200更优异。In addition, the pressure control mechanism 200 controls the opening and closing of the
在图5中,在空气供给配管101上的单向阀103的空气供给方向下流侧具备缓冲罐105。但是,在仅利用单向阀103至汽缸47间的空气供给配管101就可确保能够保持闸阀7b的规定时间关闭状态的足量空气的情况下,也可不设缓冲罐105。In FIG. 5 , a
(第2实施方式)(second embodiment)
下面,参照图6~图8,对本发明的第2实施方式的压力控制机构201进行说明。图6表示本实施方式的压力控制机构201的构造。该压力控制机构201与第1实施方式的压力控制机构200相同,也可适用于真空处理系统100。因此,在此,主要说明与第1实施方式的不同之处。在图6~图8中,对于与第1实施方式相同的构造标注相同的符号并省略其说明。Next, a
压力控制机构201具有,与闸阀7b连接并设置将来自空气供给源300的动作用空气供给至闸阀7b的汽缸47的空气供给配管101上的单向阀103;以及配置在与该单向阀103的空气供给方向下流侧的缓冲罐105。The
压力控制机构201具有,附属于搬送室3并设在搬送室3底壁3a上的连通孔107;一端与该连通孔107连接,另一端形成真空泄漏用端口109的具有狭窄流路的气体导入配管111;作为开闭该气体导入配管111的第1开闭机构的气动阀113;作为切换向该气动阀113的空气流动的第2开闭机构的机械阀121;作为进行切换机械阀121的致动器的汽缸123;以及设在机械阀121与汽缸123之间的作为加载部件的弹簧125。机械阀121与汽缸123以及弹簧125作为控制气动阀113的开闭的开闭控制部而发挥功能。The
气动阀113与控制用空气配管115连接,利用经由该控制用空气配管115供给的第1控制用空气来控制气动阀113的开闭。在本实施方式中,控制用空气配管115在途中分支成向机械阀121供给第1控制用空气的配管115a、以及向汽缸123供给第2控制用空气的配管115b。The
因单向阀103和缓冲罐105的构造及作用与第1实施方式相同,故省略其说明。此外,连通孔107和气动阀113的构造及作用也与第1实施方式相同。Since the structures and functions of the
图7以及图8表示开闭控制部的放大构造图。机械阀121具有,弹簧121a、利用该弹簧121a的加载力来切换通/断的开关部121b、具有三个端口A、B、C的三端口阀。端口A与配管115a连接。端口B经由配管115c与气动阀113连接。端口C与大气开放口127连接。7 and 8 show enlarged structural diagrams of the opening and closing control unit. The
在图7中,机械阀121为“通”,表示空气通过端口A至端口B的流路向气动阀113供给的状态。与大气开放口127连接的端口C关闭。在图8中,机械阀121为“断”,表示端口A关闭,向气动阀113供给空气被阻断的状态。与大气开放口127连接的端口C打开,从而形成端口B至端口C的空气流路。In FIG. 7 , the
在机械阀121的端口A打开的状态下,向气动阀113输送的第1控制用空气从和使闸阀7b的汽缸47动作的动作用空气相同的空气供给源300并且通过配管115a、115c被供给。With the port A of the
汽缸123是进行机械阀121的开关部121b的通/断的切换的驱动部。该汽缸123也利用从相同于使闸阀7b的汽缸47动作的动作用空气的空气供给源300经由配管115b而供给的作为第2控制用气体的第2控制用空气进行动作。即,在从空气供给源300供给空气时,汽缸123的活塞123a前进,如图7所示,机械阀121的开关部121b成为被推压的状态,从而使端口A、B间连通。于是,在从空气供给源300供给空气的状态下,机械阀121的开关部121b经常导通(ON),从而成为空气在端口A、B间流动的状态。The
另一方面,在从空气供给源300停止供给空气或者气压下降时,如图8所示,汽缸123的活塞123a后退,开关部121b因弹簧121a的加载力而被推回成为“断开”,从而阻断机械阀121的端口A、B间。On the other hand, when the supply of air from the
弹簧125设在汽缸123与机械阀121之间,对汽缸123的活塞123a推压机械阀121的开关部121b时的推压力进行微调。在供给至汽缸123的空气压力下降的过程中机械阀121的开关部121b切换为断开(OFF)的时机,能够利用该弹簧125的加载力进行精确调整。在本实施方式中,按照如下方式进行设定,例如在从空气供给源300供给的第2控制用空气的压力为0.35~0.4MPa左右范围内的情况下,汽缸123的活塞123a后退,机械阀121的开关部121b切换为断开(OFF)。于是,弹簧125的作用就是在要求的压力范围内进行机械阀121的切换。即,弹簧125具有阀切换时机调节机构的功能,其进行微调,使得当第2控制用空气的压力在规定范围内,进行机械阀121的通/断(换言之,切换气动阀113的开闭)的切换。The
在从图7所示的状态,供给至汽缸123的空气停止或者下降至规定压力时,如图8所示,机械阀121的端口A、B间被阻断。于是,气动阀113开放,外部气体(例如空气)经由真空泄漏用端口109、流路阻抗大的气体导入配管111及连通孔107逐渐地流入真空状态的搬送室3。通过从连通孔107导入外部气体,真空状态的搬送室3内的压力逐渐接近大气压,因此,从大气压开放状态的装载锁定室5一侧外加在闸阀7b的阀体41上的压力逐渐得以缓和。搬送室3中的这种压力控制是利用单向阀103以及缓冲罐105在确保汽缸47的动作用空气的状态下进行的,这样,即使在因停电等原因停止供给用于操作闸阀7b的动作用空气的情况下,也能防止闸阀7b的急剧开放。From the state shown in FIG. 7 , when the air supplied to the
在本实施方式中构成为,设置作为开闭控制部的机械阀121、汽缸123以及弹簧125,来控制气动阀113开闭。因此,与仅使用气动阀113的第1实施方式相比,具有能够利用开闭控制部高精确地调整气动阀113的开闭时机的优点。再者,当利用机械阀121和汽缸123能够将气动阀113的开闭时机调节在规定压力范围内的情况下,也可以省略弹簧125。In this embodiment, the
本实施方式中的其它构造、作用以及效果与第1实施方式相同。再者,在本实施方式中,作为第1控制用空气也可以使用从空气供给源300供给的与闸阀7b的动作用空气不同系统的空气。The other structures, operations, and effects of this embodiment are the same as those of the first embodiment. In addition, in this embodiment, the air supplied from the
(第3实施方式)(third embodiment)
下面,参照图9及图10,对本发明的第3实施方式的压力控制机构202a、202b进行说明。图9及图10表示本实施方式的压力控制机构202a、202b的构造。该压力控制机构202a、202b与第1以及第2实施方式的压力控制机构200、201同样,也可以适用于真空处理系统100。因此,在此主要说明与第1以及第2实施方式的不同之处。在图9及图10中,与第1实施方式相同的构造标注相同的符号并省略其说明。Next,
在第1实施方式的压力控制机构200中,利用气动阀113进行开闭的气体导入配管111端部的真空泄漏用端口109处于大气开放状态(参照图5)。与此相反,在本实施方式的压力控制机构202a中,如图9所示,将真空泄漏用端口109与氮(N2)气供给源131连接。因此,在从空气供给源300停止供给汽缸47的动作用空气,或者压力下降,而使气动阀113开放的情况下,从N2供给源131供给的N2气经由真空泄漏用端口109、气体导入配管111及连通孔107,逐渐导入搬送室3中。In the pressure control mechanism 200 of the first embodiment, the
N2气几乎不包含水分,一般情况下,也可用作真空腔的清洗用气体。预先将真空泄漏用端口109与N2气供给源131连接,这样,在重新从空气供给源300供给工作用气体的空气的情况下,不必事先进行搬送室3的清洗处理等,与从气动阀113导入外部气体的情况相比更加有利。此外,并非局限于N2气,例如也可以使用氩气等不活泼气体和干燥空气等。N 2 gas contains almost no moisture, and is generally used as a cleaning gas for vacuum chambers. Connect the
本实施方式的构造也可适用于图6~图8所示的第2实施方式的压力控制机构201。图10表示,在与第2实施方式同样具备作为开闭控制部的机械阀121、汽缸123及弹簧125的构造中,将真空泄漏用端口109与N2气供给源131连接的压力控制机构202b的例子。在此情况下,也能获得与上述同样的效果。The structure of the present embodiment can also be applied to the
本实施方式中的其它构造、作用及效果与第1以及第2实施方式相同。The other structures, operations, and effects of this embodiment are the same as those of the first and second embodiments.
以上阐述了本发明的实施方式,但是,本发明并非局限于上述实施方式,它可以进行多种多样的变形。例如,在上述实施方式中,列举以FPD用基板作为处理对象的基板处理系统的例子进行了说明,但是,例如也可以应用于以半导体晶片作为对象的基板处理系统中。The embodiments of the present invention have been described above, but the present invention is not limited to the above-described embodiments, and various modifications are possible. For example, in the above-mentioned embodiment, an example of a substrate processing system targeting an FPD substrate has been described, but it can also be applied to a substrate processing system targeting a semiconductor wafer, for example.
另外,在上述实施方式中,以真空状态的搬送室与大气压开放状态的装载锁定室为例进行了说明,但是,本发明的压力控制机构只要是利用空气操作的闸阀抵抗两个空间的压力差来封闭开口部的构造,同样可以使用。例如,对于真空状态的装载锁定室与外部的大气压之间的闸阀7c(参照图1、图2)也可应用本发明的压力控制机构。In addition, in the above-mentioned embodiment, the transfer chamber in the vacuum state and the load-lock chamber in the atmospheric pressure release state have been described as examples. However, the pressure control mechanism of the present invention can resist the pressure difference between the two spaces by using an air-operated gate valve. The structure to close the opening can also be used. For example, the pressure control mechanism of the present invention can also be applied to the
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JP4914486B2 (en) * | 2009-12-25 | 2012-04-11 | シーケーディ株式会社 | Exhaust speed control method using electric vacuum valve, exhaust speed control system using electric vacuum valve, valve opening set point determination method for electric vacuum valve used for exhaust speed control, and exhaust speed determination program used for exhaust speed control |
TWI490673B (en) * | 2012-01-04 | 2015-07-01 | King Yuan Electronics Co Ltd | Pressure control system and method |
CN106876304B (en) * | 2017-02-24 | 2019-09-10 | 成都京东方光电科技有限公司 | A kind of wet etching exhaust system and Wet-method etching device |
CN109715849B (en) * | 2017-08-25 | 2020-12-22 | 应用材料公司 | Apparatus for transporting a carrier in a vacuum chamber, a system for vacuum processing a substrate, and a method for transporting a carrier in a vacuum chamber |
CN109110418A (en) * | 2018-10-24 | 2019-01-01 | 爱发科真空技术(沈阳)有限公司 | A kind of pressure controllable conveying cell structure |
CN110512190B (en) * | 2019-09-25 | 2022-02-15 | 上海华力微电子有限公司 | Modification mechanism of integrated pneumatic valve bank, pneumatic valve bank device and vapor deposition equipment |
CN112768330B (en) * | 2019-10-21 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and method for preventing leakage of reaction gas |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11182699A (en) | 1997-12-22 | 1999-07-06 | Toshiba Corp | Gate valve |
US6394109B1 (en) * | 1999-04-13 | 2002-05-28 | Applied Materials, Inc. | Method and apparatus for removing carbon contamination in a sub-atmospheric charged particle beam lithography system |
US7052576B2 (en) * | 2002-01-17 | 2006-05-30 | Samsung Electronics Co., Ltd. | Pressure control apparatus and method of establishing a desired level of pressure within at least one processing chamber |
CN1925110A (en) * | 2005-09-02 | 2007-03-07 | 东京毅力科创株式会社 | Vacuum processing device |
CN101034677A (en) * | 2006-03-08 | 2007-09-12 | 平田机工株式会社 | Feeding hole |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05196150A (en) * | 1991-09-30 | 1993-08-06 | Tokyo Electron Yamanashi Kk | Gate valve |
JPH05243165A (en) * | 1992-03-03 | 1993-09-21 | Fujitsu Ltd | Vacuum device and method for manufacturing semiconductor device |
JP3486821B2 (en) * | 1994-01-21 | 2004-01-13 | 東京エレクトロン株式会社 | Processing apparatus and method of transporting object to be processed in processing apparatus |
JPH0932803A (en) * | 1995-07-20 | 1997-02-04 | Hitachi Ltd | Air cylinder, transfer device and semiconductor manufacturing device using the same |
JPH10242238A (en) * | 1997-02-28 | 1998-09-11 | Nikon Corp | Sample carrier |
KR100271758B1 (en) * | 1997-06-25 | 2001-01-15 | 윤종용 | Semiconductor device manufacturing equipment and method of driving the same |
JP3076775B2 (en) * | 1997-07-31 | 2000-08-14 | 芝浦メカトロニクス株式会社 | Vacuum processing equipment |
JP3866840B2 (en) * | 1997-10-28 | 2007-01-10 | 三機工業株式会社 | Inert gas supply equipment |
JP2002313869A (en) * | 2001-04-11 | 2002-10-25 | Sony Corp | Vacuum treatment apparatus and method therefor |
JP2003306771A (en) * | 2002-04-17 | 2003-10-31 | Ulvac Japan Ltd | Film deposition system with glove box |
JP4798981B2 (en) * | 2004-10-28 | 2011-10-19 | 東京エレクトロン株式会社 | Substrate processing apparatus control method, substrate processing apparatus, and program for controlling substrate processing apparatus |
-
2007
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-
2008
- 2008-12-24 KR KR1020080133089A patent/KR101033055B1/en not_active Expired - Fee Related
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- 2008-12-26 CN CN2008101888363A patent/CN101471241B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11182699A (en) | 1997-12-22 | 1999-07-06 | Toshiba Corp | Gate valve |
US6394109B1 (en) * | 1999-04-13 | 2002-05-28 | Applied Materials, Inc. | Method and apparatus for removing carbon contamination in a sub-atmospheric charged particle beam lithography system |
US7052576B2 (en) * | 2002-01-17 | 2006-05-30 | Samsung Electronics Co., Ltd. | Pressure control apparatus and method of establishing a desired level of pressure within at least one processing chamber |
CN1925110A (en) * | 2005-09-02 | 2007-03-07 | 东京毅力科创株式会社 | Vacuum processing device |
CN101034677A (en) * | 2006-03-08 | 2007-09-12 | 平田机工株式会社 | Feeding hole |
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