CN101443919A

CN101443919A - High throughput printing of semiconductor precursor layers from intermetallic nanoflake particles

Info

Publication number: CN101443919A
Application number: CNA2007800146177A
Authority: CN
Inventors: 耶罗恩·K·J·范杜伦; 克雷格·R·莱德赫尔姆; 马修·R·鲁滨逊
Original assignee: Individual
Current assignee: Individual
Priority date: 2006-02-23
Filing date: 2007-02-23
Publication date: 2009-05-27
Anticipated expiration: 2027-02-23
Also published as: JP2009528682A; EP1997150A2; WO2007101138A9; WO2007101138A3; CN101443919B; WO2007101138A2; JP2013033987A; CN103824896A

Abstract

Methods and apparatus are provided for: which transforms a non-planar or planar precursor material in a suitable carrier under suitable conditions, resulting in a dispersion of planar particles with an elemental stoichiometric ratio equal to that in the feed or precursor material, even after selective forced settling. In particular, planar particles are more easily dispersed, form a much denser coating (or form a coating with a greater interparticle contact area), and anneal to a molten dense film at a lower temperature and/or for a shorter time than coatings made with their spherical nanoparticles. These planar particles may be nanoflakes with high aspect ratios. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. In one embodiment, at least one set of particles in the ink may be intermetallic flake particles (microflakes or nanoflakes) containing at least one group IB-IIIA intermetallic alloy phase.

Description

High-throughput printing from the semiconductor precursor layer of intermetallic nano flake particle

Invention field

Relate generally to semiconductor film of the present invention relates more specifically to use the manufacturing based on the solar cell of the semiconductor film of IB-IIIA-VIA compound.

Background of invention

Solar cell and solar energy module are converted to daylight.These electronic devices use traditionally silicon (Si) as the light absorption semi-conducting material with relatively costly production technology manufacturing.For making solar cell feasible more economically, developed following solar cell device structure: this structure can be utilized film at an easy rate, the light absorption semi-conducting material for example copper indium gallium sulphur for diselenide, Cu (In, Ga) (S, Se) ₂, be also referred to as CI (G) S (S).This class solar cell has the p type absorbed layer that is clipped between backplate layer and the n type knot pairing layer usually.The backplate layer usually is Mo, and the knot pairing usually is CdS.On knot pairing layer, form for example zinc oxide (ZnO of transparent conductive oxide (TCO) _x), usually used as transparency electrode.The verified power conversion efficiency that has above 19% of CIS based solar battery.

The center challenge that cost makes up in large tracts of land CIGS based solar battery or the module effectively is, the element of cigs layer must be within the narrow stoichiometric proportion on the nanometer of all three dimensions, be situated between sight and macro length yardstick, so that the battery or the module that produce have high efficiency.Yet use traditional vacuum-based depositing operation to be difficult on relatively large Substrate Area, realize exact chemical metering composition.For example, be difficult to deposit compound and/or the alloy that contains more than a kind of element by sputter or evaporation.These two kinds of technology depend on the deposition process that is subjected to sight line and the restriction of limited area sources, trend towards producing bad surface coverage.Sight line track and limited area sources can produce the non-homogeneous distributed in three dimensions of element and/or produce bad film thickness uniformity on large tracts of land on all three dimensions.These heterogeneities can take place on nanometer, be situated between sight and/or macro-scale.This type of heterogeneity also changes the local stoichiometric condition ratio of absorbed layer, reduces the potential power conversion efficiency of completed cell or module.

Developed the alternative method of traditional vacuum base deposition technique.Particularly, using antivacuum semiconductor printing technology to prepare solar cell on flexible substrate provides the height cost of conventional vacuum moulding machine solar cell effectively to substitute.For example, T.Arita and colleague thereof [20thIEEE PV Specialists Conference, 1988, the 1650th page] antivacuum screen printing technique described, but this technology comprises with the ratio of components of the 1:1:2 thickener with pure Cu, In and Se powder and grinding and formation silk screen printing, this thickener of silk screen printing on substrate, and this film of sintering is to form compound layer.They report that though they begin with simple substance Cu, In and Se powder, after grinding steps, thickener contains Cu-In-Se ₂Phase.Yet, have low-down efficient by the solar cell of sinter layer manufacturing, because the structure of these absorbents and electronic property are poor.

A.Vervaet etc. have also reported the silk screen printing Cu-In-Se that is deposited as film ₂[9thEuropean Communities PV Solar Energy Conference, 1989, the 480 pages] are wherein with the Cu-In-Se of micron-scale ₂But powder makes the thickener that is used for preparing silk screen printing with the Se powder of micron-scale.The formed layer of the antivacuum silk screen printing of sintering at high temperature.The difficulty of this method is to seek to be suitable for fine and close Cu-In-Se ₂Film formed flux.The solar cell of making even so has bad conversion efficiency, remains promising but be to use printing and other antivacuum technology to make solar cell.

In described field and certainly, in the antivacuum precursor of CIGS field, there is a kind of general idea, promptly Zui Jia dispersion and coating contain spheric granules and with regard to dispersion stability and film are filled, particularly when relating to nano particle, any other shape is so not desirable.Therefore, dispersion chemistry man and coating engineer at technology and theory relate to spheric granules.Because at the antivacuum precursor of CIGS, especially comprise the high density of used metal in those precursors of simple metal, the medium that the size that the instructions for use of spheric granules is very little so that obtain is fully disperseed.The stoichiometric proportion that keeps expectation so this requires every kind of component to have similar size is because the at first sedimentation of otherwise big particle.In addition, spherical is considered to can be used for realizing the high bulk density based on filler cells/volume, even but under high density, also only in the point of contact contact, this represents the mark of surface area between very little particle to spheroid.In addition, if the good atom of expectation mixes in the film that is produced, expect that the flocculation of minimum degree is assembled to reduce.

Since the problems referred to above, the such little ball shaped nano particle that many expert's desired size of antivacuum precursor CIGS circle can reach for them.Although the use of traditional spheroidal nano particle remains promising, but stay many basic challenges, for example obtain the difficult of enough little ball shaped nano particle aspect or reproducibly obtain the difficulty of high quality film aspect with high yield and low cost (especially by the CIGS precursor material).In addition, between the spheric granules contact point place may hinder the fast processing of these particles than surface area between granule because kinetics depends on intergranular surface area contact amount in many aspects.

Summary of the invention

Embodiment of the present invention solve at least some above-mentioned shortcomings.The invention provides the use of aspherical particle in the formation of the high-quality precursor layer that is processed into dense film.The dense film that is produced is useful in can and using in multiple industry, comprising the manufacturing that still is not limited to photovoltaic device and solar cell.More specifically, the present invention is applied to the formation of thin-film solar cells with precursor layer especially.The preparation of the coating that the invention provides the dispersion of more effective and simplification and produced.Be to be understood that the present invention can generally be applied to relate to any technology from the dispersion deposition materials.In the these and other objects as herein described at least some will be satisfied by each embodiment of the present invention.

In one embodiment of the present invention, a kind of method that changes on-plane surface and/or plane precursor metal under proper condition in suitable carrier is provided, though with produce after selectivity sedimentation element chemistry metering than also with charging or precursor metal in the dispersion of the plane particle that equates.Especially, have been found that plane as herein described particle is easy to disperse, but form much fine and close coating and have the made coating of the ball shaped nano particle of similar basically composition different shape the compare low temperature and/or the film forming of annealing under the less time with them.In one embodiment of the present invention, stabilising dispersions is the dispersion of keep disperseing to continue to be enough to make a period of time that substrate obtains applying.In one embodiment, this may relate to use stirring and keeps Dispersion of Particles in dispersion.In other embodiments, but this may relate to sedimentation be carved in use can be by the dispersion that stirs and/or other method is disperseed again when coming.

In another embodiment of the present invention, a kind of method that comprises preparation particle printing ink is provided, wherein all basically particles all are nano flake (nanof lake).In one embodiment, be nano flake at least about 95% (in the total weight of all particles) in all particles.In one embodiment, be nano flake at least about 99% (in the total weight of all particles) in all particles.In one embodiment, all particles are nano flakes.In another embodiment, all particles are micron thin slice and/or nano flake.Basically each nano flake contains at least a element from IB, IIIA and/or VIA family, and the total amount of the IB that comprises in the wherein said printing ink, IIIA and/or VIA family element makes this printing ink have the element chemistry metering ratio of expecting expectation or approaching for IB and IIIA family element at least.Described method comprises with this ink coats substrate to form precursor layer and to handle this precursor layer to form dense film in appropriate atmosphere.Described dense film can be used for the formation of the semiconductor absorber of photovoltaic device.This film can be made of the fusing form of the precursor layer that comprises a plurality of non-molten individual particles that contain.

In another embodiment of the present invention, a kind of material that comprises a plurality of nano flakes is provided, the material composition of described a plurality of nano flakes contains at least a element from IB, IIIA and/or VIA family.Prepare described nano flake by grinding or pulverizing with the precursor granules that precursor consists of feature, this precursor is formed ductility (the better ductility that provides enough, see that patent is hereinafter) when grinding or pulverize, forming flat shape from the original shape on on-plane surface and/or plane, and the total amount of the IB, the IIIA that wherein in the precursor granules that merges, comprise and/or VIA family element at least for IB and IIIA family element be in expectation or near the element chemistry metering of expectation than under.In one embodiment, those situations that are included in the wide particle that on all other dimensions, approaches on two dimensions on plane.Grinding can make all basically precursor granules be transformed into nano flake.As selection, grind and to make at least 50% precursor granules be transformed into nano flake.Grinding can be carried out in oxygen-free atmosphere with preparation anaerobic nano flake.Grinding can be carried out in inert gas environment with preparation anaerobic nano flake.These aspherical particles can be the nano flake of full-size (thickness and/or length and/or width) greater than about 20nm, because tend to produce the lower solar cell of efficient than this littler size.Grinding can also and be lower than the particle that carries out under the temperature of room temperature to allow that grinding is made of low melting material through cold quenching.In other embodiments, grinding can at room temperature be carried out.As selection, grinding can be higher than the material ductility of carrying out under the temperature of room temperature with the acquisition expectation.In one embodiment of the present invention, the material of feed particles composition preferably demonstrates and makes nonplanar feed particles be configured as the ductility of the nano flake on plane basically under proper temperature.In one embodiment, described nano flake has at least one smooth basically surface.

In another embodiment of the present invention, a kind of solar cell is provided, it comprises substrate, in the backplate that forms on the described substrate, the p N-type semiconductor N film that is forming on the described backplate, formation so that constitute the n N-type semiconductor N film of pn knot and the transparency electrode that on described n N-type semiconductor N film, forms with described p N-type semiconductor N film.Described p N-type semiconductor N film is produced by the formed dense film of a plurality of nano flakes by handling, the material of described nano flake is formed and is contained at least a element from IB, IIIA and/or VIA family, and wherein the film that is produced has 26% or littler voidage.In one embodiment, this numerical value can be filled the free volume of spheroid so that voidage reduces to minimum based on different-diameter.In another embodiment of the present invention, described dense film has about 30% or littler voidage.In other embodiments, voidage is about 20% or littler.In other embodiments, voidage is about 10% or littler.

In another embodiment of the present invention, provide a kind of method that has the particle formation film of special properties by use.Described character can distribute based on size, shape, composition and form between particle.As limiting examples, described particle can be the nano flake in the desired size scope.In nano flake, form can comprise unbodied particle, crystalline particle, than the particle of amorphous more crystalline state and than the more unbodied particle of crystalline state.Described character can also be based on forming between particle and the form distribution.In one embodiment of the present invention, be to be understood that the form that the thin slice that produced has is that described thin slice is compared less crystalline state with the feed material that forms this thin slice.Thin slice be have at least one basically flat surfaces particle and also can comprise nano flake and/or the micron thin slice.

In another embodiment of the present invention, described method comprises preparation particle printing ink, wherein about 50% or more particles (in the total weight of all particles) be to contain at least aly separately from the element of IB, IIIA and/or VIA family and thin slice with aspheric flat shape, the total amount of the IB that comprises in the wherein said printing ink, IIIA and/or VIA family element makes this printing ink have the element chemistry metering ratio of expectation.In another embodiment, term " 50% or more " can be based on the numbers of particles of total number of particles in the described relatively printing ink.In another embodiment, at least about 75% or more particles (by weight or by number) be nano flake.Described method comprises with this ink coats substrate to form precursor layer and to handle this precursor layer to form film under suitable process conditions.Described film can be used for the formation of the semiconductor absorber of photovoltaic device.Be to be understood that suitable treatment conditions can include, but are not limited to atmosphere composition, pressure and/or temperature.In one embodiment, all basically particles are the thin slices with aspheric flat shape.In one embodiment, in all particles (in all particle weight that merge) are thin slices at least about 95%.In another embodiment, at least 99% in all particles (in all particle weight that merge) are thin slices.Described thin slice can be made up of nano flake.In other embodiments, described thin slice can be made up of micron thin slice and nano flake.

The flat shape that is to be understood that described nano flake can provide many advantages.As limiting examples, flat shape can produce bigger surface area contact between adjacent nano flake, this makes compares with the made film of the precursor layer of the printing ink that uses the ball shaped nano particle, wherein this nano particle has that similar basically material is formed and these printing ink others are identical with printing ink of the present invention basically, and dense film formed under lower temperature and/or short period.The flat shape of described nano flake also can produce bigger surface area contact between adjacent nano flake, this makes the made film of precursor layer of the ball shaped nano particle printing ink identical with printing ink of the present invention basically with using others compare, and this dense film forms at least under low 50 ℃ annealing temperature.

The flat shape of described nano flake can produce bigger surface area contact with respect to adjacent ball shaped nano particle between adjacent nano flake, and compares the atom that promotes raising with the prepared film of precursor layer that printing ink of the present invention forms thus and mix.The prepared film of precursor layer that the ball shaped nano particle printing ink of the same composition identical with printing ink of the present invention basically with using others forms is compared, and the flat shape of described nano flake produces higher bulk density in dense film.

The flat shape of described nano flake can also produce the bulk density at least about 76% in precursor layer.The flat shape of this nano flake can produce at least 80% bulk density in precursor layer.The flat shape of this nano flake can produce at least 90% bulk density in precursor layer.The flat shape of this nano flake can produce at least 95% bulk density in precursor layer.Bulk density can be mass/volume, solid/volume or non-void/volume.

The flat shape of described nano flake produces the crystallite dimension at least about 1 μ m in the semiconductor absorber of photovoltaic device.The flat shape of this nano flake can produce at least one dimension the crystallite dimension at least about 2.0 μ m in the semiconductor absorber of photovoltaic device.In other embodiments, described nano flake produces at least one dimension the crystallite dimension at least about 1.0 μ m in the semiconductor absorber of photovoltaic device.In other embodiments, described nano flake produces at least one dimension the crystallite dimension at least about 0.5 μ m in the semiconductor absorber of photovoltaic device.The flat shape of this nano flake can produce the wide crystallite dimension at least about 0.3 μ m in the semiconductor absorber of photovoltaic device.In other embodiments, when described nano flake was formed by in following copper selenide, indium selenide or the gallium selenide one or more, the flat shape of nano flake can produce the wide crystallite dimension at least about 0.3 μ m in the semiconductor absorber of photovoltaic device.

The flat shape of described nano flake is provided at the material character of avoiding the quick and/or preferential sedimentation of particle when forming precursor layer.The flat shape of this nano flake is provided at the material character of avoiding having the quick and/or preferential sedimentation of nano flake that different materials forms when forming precursor layer.The flat shape of this nano flake is provided at the material character of the quick and/or preferential sedimentation of the nano flake of avoiding having varying particle size when forming precursor layer.The flat shape of this nano flake is provided at the material character of avoiding the nano flake gathering in the printing ink and makes the fine dispersion soln of nano flake become possibility thus.

The flat shape of described nano flake is provided at the material character of the gathering that the nano flake of avoiding particular types in the printing ink do not expect and makes the even dispersion soln of nano flake become possibility thus.The flat shape of this nano flake is provided at the material character of the gathering that the nano flake of avoiding certain material to form in the printing ink do not expect and makes the even dispersion soln of nano flake become possibility thus.The flat shape of this nano flake is provided at the material character that the nano flake of avoiding specific phase to separate in the precursor layer that printing ink produces is assembled.This nano flake has between the nano flake that reduces in the printing ink and the carrier fluid the capillary material character on the interface to improve dispersion quality.

In one embodiment of the present invention, can prepare printing ink by utilizing the low-molecular-weight dispersant, because the favourable interaction of the flat shape of this dispersant and nano flake, comprising of it is effective.Can be by utilizing carrier fluid without dispersant preparation printing ink.The prepared film of precursor layer that the flat shape of described nano flake provides the ball shaped nano particle printing ink identical with printing ink of the present invention basically with others to form is compared and is allowed IIIA family material more homodisperse material character in whole dense film.In another embodiment, described nano flake can have random flat shape and/or random distribution of sizes.

Described nano flake can have non-random flat shape and/or non-random distribution of sizes.This nano flake can have separately less than about 500nm and greater than length and/or the maximum transverse size of about 20nm.This nano flake can have length and/or the maximum transverse size of the about 50nm of about 300nm-separately.Described nano flake can have about 100nm or littler thickness separately.In other embodiments, the length of smooth nano flake is the about 1nm of about 500nm-.As a kind of limiting examples, nano flake can have length and/or the maximum transverse size of the about 10nm of about 300nm-.In other embodiments, nano flake can have the thickness of the about 20nm of about 200nm-.In another embodiment, these nano flakes can have the thickness of the about 10nm of about 100nm-.In one embodiment, these nano flakes can have the thickness of the about 20nm of about 200nm-.Nano flake can have the thickness less than about 50nm separately.Nano flake can have the thickness less than about 20nm.Nano flake can have at least about 5 or bigger aspect ratio.Nano flake can have at least about 10 or bigger aspect ratio.Nano flake has at least about 15 or bigger aspect ratio.

Described nano flake can oxygen-free.This nano flake can be single metal.This nano flake can be the alloy of IB, IIIA family element.This nano flake can be the bianry alloy of IB, IIIA family element.This nano flake can be the ternary alloy three-partalloy of IB, IIIA family element.This nano flake can be the quaternary alloy of IB, IIIA and/or VIA family element.This nano flake can be IB family-chalcogenide particle and/or IIIA family-chalcogenide particle.In addition, described particle can be the particle that is substantially free of oxygen, and it can comprise and contains those particles that are less than about 1wt% oxygen.Other embodiments can be used has the material that is less than about 5wt% oxygen.Other embodiments can be used has the material that is less than about 3wt% oxygen.Other embodiments can be used has the material that is less than about 2wt% oxygen.Other embodiments can be used has the material that is less than about 0.5wt% oxygen.Other embodiments can be used has the material that is less than about 0.1wt% oxygen.

In one embodiment of the present invention, described coating step at room temperature carries out.This coating step can carry out under atmospheric pressure.Described method may further include the selenium film is deposited on the dense film.This treatment step can promote by using following at least a heat treatment technics: pulse heat treatment, be exposed to laser beam or by IR lamp heating and/or similar or relevant method.Described processing can comprise with precursor layer be heated to greater than about 375 ℃ but continue to be less than 15 minutes time less than the temperature of substrate fusion temperature.This processing can comprise with precursor layer be heated to greater than about 375 ℃ but continue 1 minute or less time less than the temperature of substrate fusion temperature.

In another embodiment of the present invention, but processing can comprise and precursor layer is heated to annealing temperature continues 1 minute or less time less than the substrate fusion temperature.Described appropriate atmosphere can comprise nitrogen atmosphere.In another embodiment of the present invention, described appropriate atmosphere comprises blanket of nitrogen.In another embodiment, described appropriate atmosphere comprises carbon monoxide atmosphere.This appropriate atmosphere can be formed by having the atmosphere that is less than about 10% hydrogen.This appropriate atmosphere can be made up of the atmosphere that contains selenium.This appropriate atmosphere can be made up of the atmosphere of non-oxygen chalcogen.In one embodiment of the present invention, described appropriate atmosphere can be made up of selenium atmosphere, and this selenium atmosphere provides the dividing potential drop of pressing more than or equal to the selenium steam in the precursor layer.In another embodiment, described appropriate atmosphere can be made up of the non-oxygen atmosphere that contains the chalcogen steam, this chalcogen steam is being depressed so that the loss of precursor layer chalcogen minimizes more than or equal to the chalcogen branch of the chalcogen vapour pressure under treatment temperature and the processing pressure, and wherein this processing pressure is non-vacuum pressure.In another embodiment, chalcogen atmosphere can be used with one or more binary chalcogenides (arbitrary shape or form), it is in more than or equal to the chalcogen branch of the chalcogen vapour pressure under treatment temperature and the processing pressure depresses so that the loss of precursor layer chalcogen minimizes, and wherein randomly this processing pressure is non-vacuum pressure.

In another embodiment of the present invention, before the step of preparation printing ink, comprise the step of making nano flake.Described manufacturing step comprises provides the feed particles that contains at least a IB, IIIA and/or VIA family element, wherein the composition of each feed particles with enough ductility and grinds this feed particles and is reduced to less than 100nm with the thickness that makes each particle at least forming flat shape from the on-plane surface original shape basically.Grinding steps can carry out in oxygen-free atmosphere to make the nano flake of anaerobic basically.Described substrate can be a rigid substrate.Described substrate can be a flexible substrate.This substrate can be aluminum substrates or polymer substrate, and it is to use commercially available net to be coated with flexible substrate in reel-to-reel (roll-to-roll) method (continuous or segmentation) of system.Rigid substrate can be formed by being selected from following at least a material: any single or multiple combination of glass, solar energy glass, low iron glass, green glass, soda-lime glass, steel, stainless steel, aluminium, polymer, pottery, metallic plate, metallized ceramic plate, metallized polymeric plate, metallized glass plate and/or above-mentioned material.Described substrate can be under the different temperatures with precursor layer in processing procedure.This can melt or the unsettled material that becomes so that substrate can use under the treatment temperature of precursor layer.Randomly, this can relate to positive this substrate of cooling in processing procedure.

In another embodiment of the present invention, a kind of method of preparing particle printing ink is provided, wherein most of particle is to contain at least aly from the element of IB, IIIA and/or VIA family and the nano flake with aspheric flat shape separately, and the total amount of the IB that comprises in the wherein said printing ink, IIIA and/or VIA family element makes this printing ink have the element chemistry metering ratio of expectation.Described method can comprise with this ink coats substrate to form precursor layer and to handle the dense film that this precursor layer is grown with the semiconductor absorber that is formed for photovoltaic device.In one embodiment, at least 60% particle (by weight or by number) is a nano flake.In another embodiment, at least 70% particle (by weight or by number) is a nano flake.In another embodiment, at least 80% particle (by weight or by number) is a nano flake.In another embodiment, at least 90% particle (by weight or by number) is a nano flake.In another embodiment, at least 95% particle (by weight or by number) is a nano flake.

In another embodiment, liquid ink can be made with one or more liquid metals.For example, printing ink can by the liquid state of gallium and/or indium and/or molten mixture is initial be made.Copper nano particles can be joined in the mixture then, this mixture can be used as printing ink/thickener then.Copper nano particles can be buied.As selection, the temperature (for example cooling) that can regulate the Cu-Ga-In mixture forms until solid.Can be under this temperature with solid abrasive until there being little nano particle (for example less than 5nm).Can by for example before annealing, during or be exposed to afterwards under the selenium steam and selenium joined in printing ink and/or the formed film of this printing ink.

In another embodiment of the present invention, a kind of technology that comprises the dispersion of the solid-state and/or liquid particles of preparation is described, this particle comprises IB and/or IIIA family element and randomly at least a VIA family element.Described technology comprise this dispersion of deposition to the substrate with at cambium layer on the substrate and in appropriate atmosphere, make this layer reaction to form film.In this technology, at least one group of particle is the intermetallic particle that contains at least a IB-IIIA family intermetallic phase.Any above-mentioned embodiment can be used the thin slice (micron thin slice or nano flake) that contains intermetallic phase as described herein.

In another embodiment of the present invention, a kind of composition is provided, it comprises the particle of a plurality of IB of containing and/or IIIA family element and randomly at least a VIA family element.At least one group of particle contains at least a IB-IIIA family intermetallic phase.

In another embodiment of the present invention, described method can comprise that preparation comprises the dispersion of the particle of IB and/or IIIA family element and randomly at least a VIA family element.This method can comprise this dispersion of deposition to the substrate with at cambium layer on the substrate and in appropriate atmosphere, make this layer reaction to form film.At least one group of particle contains the IB-IIIA family alloy phase of poor IB family.In some embodiments, the contribution of the particle of poor IB family is less than the IB family element that exists of about 50mol% in all particles.The IB-IIIA family alloy phase particle of described poor IB family can be a kind of unique source in the IIIA family element.The IB-IIIA family alloy phase particle of described poor IB family can contain intermetallic phase and can be a kind of unique source in the IIIA family element.The IB-IIIA family alloy phase particle of described poor IB family can contain intermetallic phase and be a kind of unique source in the IIIA family element.The IB-IIIA family alloy phase particle of described poor IB family can be Cu ₁In ₂Particle and be unique source of the indium in the material.

Be to be understood that in aforementioned films and/or the final compound any can comprise the IB-IIIA-VIA compounds of group.Described reactions steps can be included in the described layer of heating in the appropriate atmosphere.Described deposition step can comprise uses the dispersion coated substrate.At least one group of particle in this dispersion can be nanometer bead form.At least one group of particle in this dispersion can be nanometer bead form and contain at least a IIIA family element.At least one group of particle in this dispersion can be the nanometer bead form that comprises the IIIA family element of simple substance form.In some embodiments of the present invention, described intermetallic phase is not an end border solid solution phase.In some embodiments of the present invention, described intermetallic phase is not the solid solution phase.Described intermetallic particle can be contributed the IB family element that exists that is less than about 50mol% in all particles.Described intermetallic particle can be contributed the IIIA family element that exists that is less than about 50mol% in all particles.Described intermetallic particle can be contributed IB family element that is less than about 50mol% and the IIIA family element that is less than about 50mol% in the dispersion on being deposited on substrate.Described intermetallic particle can the dispersion on being deposited on substrate in contribution be less than the IB family element of about 50mol% and more than the IIIA family element of about 50mol%.Described intermetallic particle can the dispersion on being deposited on substrate in contribution more than the IB family element of about 50mol% be less than the IIIA family element of about 50mol%.Aforementioned any molar percentage can be based on the integral molar quantity of the element in all particles that exist in the described dispersion.In some embodiments, at least some particles have platelet (platelet) shape.In some embodiments, it is crystalline that most of particle has sheet.In other embodiments, it is crystalline that all basically particles have sheet.

For in the previous embodiments any, the intermetallic material of using under the present invention is a binary material.This intermetallic material can be a ternary material.This intermetallic material can comprise Cu ₁In ₂This intermetallic material can comprise Cu ₁In ₂The composition of δ phase.This intermetallic material can comprise Cu ₁In ₂δ and Cu16In9 limit mutually between composition.This intermetallic material can comprise Cu ₁Ga ₂This intermetallic material can comprise Cu ₁Ga ₂Intermediate solid solution.This intermetallic material can comprise Cu ₆₈Ga ₃₈This intermetallic material can comprise Cu ₇₀Ga ₃₀This intermetallic material can comprise Cu ₇₅Ga ₂₅This intermetallic material can comprise the Cu-Ga composition mutually between end border solid solution and the intermediate solid solution that is only second to it.The Cu-Ga that this intermetallic material can comprise γ 1 phase forms (the about 39.8wt% Ga of about 31.8-).The Cu-Ga that this intermetallic material can comprise γ 2 phases forms (the about 39.9wt% Ga of about 36.0-).The Cu-Ga that this intermetallic material can comprise γ 3 phases forms (the about 44.9wt% Ga of about 39.7-).The Cu-Ga mutually that this intermetallic material can comprise between γ 2 and the γ 3 forms.This intermetallic material can comprise the Cu-Ga composition mutually between end border solid solution and the γ 1.The Cu-Ga that this intermetallic material can comprise the θ phase forms (the about 68.7wt% Ga of about 66.7-).This intermetallic material can comprise the Cu-Ga of rich Cu.Gallium can be used as IIIA family element and introduces with the form of suspension of nanometer bead.Gallium nanometer bead can form by the emulsion that produces liquid gallium in solution.Gallium nanometer bead can be by producing in the following quenching of room temperature.

Can comprise by stirring, mechanical device, calutron, Vltrasonic device and/or add dispersant and/or emulsifying agent keeps or improves the dispersion of liquid gallium in solution according to any the technology in the previous embodiments of the present invention.This technology can comprise that adding one or more is selected from the mixture of following simple substance particle: aluminium, tellurium or sulphur.Described appropriate atmosphere can contain selenium, sulphur, tellurium, H ₂, CO, H ₂Se, H ₂S, Ar, N ₂Or its combination or mixture.This appropriate atmosphere can contain following at least a: H ₂, CO, Ar and N ₂One class or multiclass particle can be doped with one or more inorganic material.Randomly, the particle doped inorganic material that has one or more to be selected from aluminium (Al), sulphur (S), sodium (Na), potassium (K) or lithium (Li) of a class or multiclass.

Randomly, embodiment of the present invention can comprise having the copper source that can not form alloy immediately with In and/or Ga.A kind of selection can be to use the copper of (slightly) oxidation.Another kind of selection can be to use CuxSey.Attention may need reduction step for the copper approach of (slightly) oxidation.Basically, if use elemental copper in liquid In and/or Ga, the speed of the process between printing ink preparation and the coating should enough will produce the size of coating in uneven thickness so that particle grows into.

Be to be understood that temperature range can be the substrate temperature scope, because substrate normally should be its unique one of heating more than the fusing point.The material of minimum fusing point in this suitable substrate, i.e. Al and other suitable substrate.

With reference to the remainder and the accompanying drawing of specification, can become obvious to more understandings of characteristic of the present invention and advantage.

Description of drawings

Figure 1A-1D is the schematic sectional view that explanation is made according to the film of one embodiment of this invention.

Fig. 2 A and 2B are according to the enlarged side view of the nano flake of one embodiment of this invention and amplification plan view.

Fig. 2 C is the amplification plan view according to the micron thin slice of one embodiment of this invention.

Fig. 3 shows the schematic diagram according to the grinding system of one embodiment of this invention.

Fig. 4 shows the schematic diagram according to the reel-to-reel manufacturing system of one embodiment of this invention.

Fig. 5 shows the sectional view according to the photovoltaic device of one embodiment of this invention.

Fig. 6 shows the flow chart according to the method for one embodiment of this invention.

Fig. 7 shows the module with a plurality of photovoltaic devices according to one embodiment of this invention.

Fig. 8 A-8C shows the schematic diagram of the plane particle that uses with spheric granules according to one embodiment of this invention.

Fig. 9 A-9D shows the schematic diagram of the discontinuous printed layers in the chalcogen source of using with the plane particle according to one embodiment of this invention.

Fig. 9 E shows the particle with chalcogen shell according to one embodiment of this invention.

Figure 10 A-10C shows the use according to the chalcogenide plane particle of one embodiment of this invention.

Figure 11 A-11C shows the nucleating layer according to one embodiment of this invention.

Figure 12 A-12C shows and can be used for being prepared into by thermal gradient the schematic representation of apparatus of stratum nucleare.

Figure 13 A-13F shows the use according to the chemical gradient of one embodiment of this invention.

Figure 14 shows according to reel-to-reel of the present invention system.

Figure 15 A shows the schematic diagram that uses the system of chalcogen steam ambient according to one embodiment of this invention.

Figure 15 B shows the schematic diagram that uses the system of chalcogen steam ambient according to one embodiment of this invention.

Figure 15 C shows the schematic diagram that uses the system of chalcogen steam ambient according to one embodiment of this invention.

Figure 16 A shows a kind of embodiment of the system that uses with rigid substrate according to one embodiment of this invention.

Figure 16 B shows a kind of embodiment of the system that uses with rigid substrate according to one embodiment of this invention.

Figure 17-19 demonstration uses intermetallic material to form film according to embodiment of the present invention.

Figure 20 shows according to embodiment of the present invention to use a plurality of layers to form the sectional view of film.

Figure 21 shows the feed material of handling according to embodiment of the present invention.

Figure 22 A and 22B show the feature according to the thin slice of embodiment of the present invention.

Figure 23 A and 23B show the feature of platelet.

Embodiment

The detailed description that is to be understood that the general description of front and back all is exemplary and explanat and is not restriction to claimed invention.Can notice that when being used for specification and appended claims, singulative " ", " a kind of " and " being somebody's turn to do " comprise plural object, unless context is indicated clearly in addition.Therefore, for example, mention that " a kind of material " can comprise mixtures of material, mention that " a kind of compound " can comprise multiple compound, or the like.Therefore the list of references that this paper quotes is all incorporated into by reference, unless reach they with this specification in the clear and definite instruction of the elaboration degree of conflicting.

In this specification and following claim book, will be with reference to some terms, it should be defined as has following meanings:

Described situation can take place or can not take place after " optional " or " randomly " meaned, so this description comprises the situation that situation that this situation takes place and this situation do not take place.For example, if device randomly comprises the feature of barrier film, this means that this barrier film feature can exist or can not exist, and, therefore, this description had not only comprised that wherein device had the structure of barrier film feature but also comprises the wherein non-existent structure of barrier film feature.

According to embodiment of the present invention, the printing ink that contains at least a aspherical particle from IB, IIIA and/or VIA family element by preparation at first separately, forming precursor layer, and heat this precursor layer with this ink coats substrate, can make the active layer of photovoltaic device to form dense film.Randomly, be to be understood that in some embodiments, may do not need the densification of precursor layer, if particularly precursor material be anaerobic and/or anaerobic basically.Therefore, air is handled and anaerobic if described particle does not have, and can randomly skip over heating steps.In a kind of embodiment preferred, described aspherical particle is the shape nano flake on plane basically.Can in appropriate atmosphere, handle dense film to form the IB-IIIA-VIA compounds of group.The IB-IIIA-VIA compounds of group that is produced is formula CuIn preferably _(1-x)Ga _xS _{2 (1-y)}Se _2yCu, In, Ga and selenium (Se) or the compound of sulphur S, wherein 0≤x≤1 and 0≤y≤1.Be to be understood that in addition the IB-IIIA-VIA compounds of group that is produced can be formula Cu _zIn _(1-x)Ga _xS _{2 (1-y)}Se _2yCu, In, Ga and selenium (Se) or the compound of sulphur S, wherein 0.5≤z≤1.5,0≤x≤1.0 and 0≤y≤1.0.

Be to be understood that IB, IIIA and VIA family element beyond Cu, In, Ga, Se and the S also can be included in the explanation of IB-IIIA-VIA material as herein described, and hyphen ("-" for example, in Cu-Se or Cu-In-Se) use do not represent compound, but show the coexistence mixture of the element that connects by this hyphen.Will also be understood that IB family is called as 11 families sometimes, IIIA family is called as 13 families sometimes, and VIA family is called as 16 families sometimes.In addition, VIA (16) family element is called as chalcogen sometimes.In embodiments of the invention, some elements can combination with one another or situation about replacing each other under, for example In and Ga, or Se, and S, commonly in one group of bracket, comprise the element that those can make up or exchange in this area, for example (In, Ga) or (Se, S).This convenient measure is adopted in description in this specification sometimes.At last, also for convenience's sake, these elements are discussed with its chemical symbol of accepting usually.The IB family element that is applicable to the inventive method comprises copper (Cu), silver (Ag) and gold (Au).Preferred IB family element is copper (Cu).The IIIA family element that is applicable to the inventive method comprises gallium (Ga), indium (In), aluminium (Al) and thallium (Tl).Preferred IIIA family element is gallium (Ga) or indium (In).The VIA family element of paying close attention to comprises selenium (Se), sulphur (S) and tellurium (Te), and preferred VIA family element is Se and/or S.Be to be understood that and can also use above-mentioned any mixture, for example but be not limited to alloy, solid solution and compound.

Form the method for film

Referring now to Fig. 1, a kind of method that forms semiconductor film according to the present invention will be described.The present embodiment that is to be understood that invention uses antivacuum technology to form semiconductor film.Yet other embodiment can form this film under vacuum environment, and uses the present invention of aspherical particle to be not limited only to antivacuum paint-on technique.

As what in Figure 1A, see, substrate 102 is provided, will form precursor layer 106 (seeing Figure 1B) thereon.As non-limiting instance, substrate 102 can by metal for example aluminium make.In other embodiments, metal for example still can be not limited to stainless steel, molybdenum, titanium, copper, metallized plastic film or aforesaid combination as substrate 102.Substrate as an alternative includes, but are not limited to pottery, glass etc.Any of these substrate can be the form of paper tinsel, sheet material, volume etc. or its combination.Material according to substrate 102, what come in handy is the surface that covers substrate 102 with contact layer 104, thereby promote substrate 102 and remain electrically contacting between the absorbed layer formed thereon, thereby and/or the reactivity of restriction substrate 102 in subsequent step, and/or in order to promote more high-quality absorber growth.As limiting examples, when substrate 102 was made of aluminum, contact layer 104 can be but be not limited to molybdenum layer.With regard to current argumentation, contact layer 104 can be regarded as the part of substrate.Therefore, if use contact layer 104, any being included in the argumentation that forms or arrange a kind of material or material layer on the substrate 102 arranges or forms described material or layer on the contact layer 104.Randomly, in order to insulate or the part of substrate 102 be used and still be regarded as to other purpose can also with contact layer 104 with other material layer.Be to be understood that contact layer 104 can comprise more than one type or more than one discontinuous material layer.Randomly, some embodiments can be used for contact layer with following any one and/or combination: copper, aluminium, chromium, molybdenum, vanadium etc. and/or iron-cobalt alloy.Randomly, can comprise that diffusion impervious layer 103 (showing with diplopia) and layer 103 can be conduction or nonconducting.As limiting examples, layer 103 can be by any composition the in the multiple material, and these materials include, but are not limited to chromium, vanadium, tungsten or compound for example nitride (comprising tantalum nitride, tungsten nitride, titanium nitride, silicon nitride, zirconium nitride and/or hafnium nitride), oxide (comprising Al2O3 or SiO2), carbide (comprising SiC) and/or aforesaid any single or Multiple Combination.Randomly, diffusion impervious layer 105 (showing) with diplopia can be in substrate 102 downside and by such as but be not limited to following material and form: chromium, vanadium, tungsten or compound be nitride (comprising tantalum nitride, tungsten nitride, titanium nitride, silicon nitride, zirconium nitride and/or hafnium nitride), oxide (comprising Al2O3 or SiO2), carbide (comprising SiC) and/or aforesaid any single or Multiple Combination for example.Can make layer 103 and/or 105 be fit to use with any of embodiment described herein.

Referring now to Figure 1B, on substrate 102, form precursor layer 106 by using such as the dispersion coated substrate 102 that still is not limited to printing ink.As a kind of limiting examples, described printing ink can comprise the carrier fluid that mixes with nano flake 108 and have the rheological characteristic that printing ink can be applied on substrate 102.In one embodiment, the present invention can use and mix with carrier and the dried powder of sonicated before applying.Randomly, printing ink can be prepared directly from grinder.Under the situation of mixing a plurality of thin slice compositions, product can be mixed by various grinders.This mixing can be carried out sonicated, but can use the stirring of other form and/or other grinder.The printing ink that is used for forming precursor layer 106 can contain aspherical particle 108 for example but be not limited to nano flake.Be to be understood that in addition this printing ink can be randomly uses aspheric and spherical particle simultaneously with in the various relative scales any.

Figure 1B comprises the close up view of the nano flake 108 in the precursor layer 106, as what see in enlarged image.Nano flake has aspherical and smooth basically at least simultaneously.The more detailed view of a kind of embodiment of nano flake 108 can find in Fig. 2 A and 2B.Nano flake can be defined as length and/or maximum transverse size for about 500nm or littler have at least one particle of flat surfaces basically, and this particle has about 2 or bigger aspect ratio.In one embodiment, this length and/or maximum transverse size are the about 1nm of about 400nm-.In another embodiment, this length and/or maximum transverse size are the about 10nm of about 300nm-.In another embodiment, this length and/or maximum transverse size are the about 20nm of about 200nm-.In another embodiment, this length and/or maximum transverse size are the about 200nm of about 500nm-.In other embodiments, nano flake is that thickness is that about 100nm of about 10-and length are the structure on the plane basically of the about 500nm of about 20nm-.

Be to be understood that different types of nano flake 108 can be used for forming precursor layer 106.In a limiting examples, this nano flake is the simple substance nano flake, just has only the nano flake of single atomic species.Nano flake can be the single metallic particles of Cu, Ga, In or Se.Some printing ink can have only a kind of nano flake.Other printing ink can have the nano flake that two or more in the following areas can be different: material is formed and/or other character for example still is not limited to shape, size, internal structure (for example centronucleus that is surrounded by one or more shells), external skin (at this moment be more illustrative, can use for example wording of nuclear-shell) or the like.In one embodiment, the printing ink that is used for precursor layer 106 can contain nano flake that comprises one or more IB family elements and the nano flake that comprises one or more different IIIA family elements.Preferably, precursor layer (106) cupric, indium and gallium.In another embodiment, precursor layer 106 can be the layer of cupric, indium and the gallium of anaerobic.Randomly, the elemental ratio in the precursor layer can be so that this layer forms CuIn when handling _xGa _1-xCompound, 0≤x≤1 wherein.Those skilled in the art will recognize that other IB family element can replace Cu and other IIIA family element can replace In and Ga.Randomly, precursor can also contain Se, for example still is not limited to the Cu-In-Ga-Se sheet.If precursor oxygen-free and do not need densification this is feasible.In other embodiments, precursor material can contain the nano flake of IB, IIIA and VIA family element.In a limiting examples, precursor can contain the Cu-In-Ga-Se nano flake, if do not have air form this nano flake and also do not need before the film forming densification this can be particularly advantageous.

Randomly, the nano flake in the printing ink 108 can be the alloy nano thin slice.In a limiting examples, this nano flake can be for example Cu-In, In-Ga or Cu-Ga of binary alloy nano thin slice.As an alternative, this nano flake can be the bianry alloy of the bianry alloy of bianry alloy, IB, VIA family element of IB, IIIA family element and/or IIIA, VIA family element.In other embodiments, this particle can be the ternary alloy three-partalloy of IB, IIIA and/or VIA family element.For example, this particle can be any above-mentioned element the ternary alloy three-partalloy particle such as but be not limited to Cu-In-Ga.In other embodiments, printing ink can contain the particle as the quaternary alloy of IB, IIIA and/or VIA family element.Some embodiments can have quaternary or polynary nanometer thin slice.This printing ink can also make up different types of nano flake and for example still be not limited to simple substance nano flake and alloy nano thin slice etc.In one embodiment, the preferred oxygen-free except those amounts that exist inevitably as impurity of the nano flake that is used to form precursor layer 106.Randomly, this nano flake contains the oxygen that is less than about 0.1wt%.In other embodiments, nano flake contains the oxygen that is less than about 0.5wt%.In other embodiments, nano flake contains the oxygen that is less than about 1.0wt%.In another embodiment, nano flake contains the oxygen that is less than about 3.0wt%.In other embodiments, nano flake contains the oxygen that is less than about 5.0wt%.

Randomly, the nano flake 108 in the printing ink can be the chalcogenide particle, for example still is not limited to IB family or IIIA family selenides.In a limiting examples, this nano flake can be and one or more IB families (new style: the element IB family chalcogenide of copper (Cu), silver (Ag) and gold (Au) formation for example 11 families).Example includes, but are not limited to Cu _xSe _y, wherein x is that about 1-10 and y are about 1-10.In some embodiments of the present invention, x＜y.As selection, some embodiments can have the selenides of richer selenium, for example still are not limited to Cu ₁Se _x(wherein x〉1).This can provide the selenium source of increase, as submit on February 23rd, 2006 and all incorporate into by reference discuss in the U.S. Patent application 11/243,522 (attorney docket NSL-046) common transfer, common pending trial of this paper like that.In another limiting examples, nano flake can be and one or more IIIA families (new style: the element IIIA family chalcogenide of aluminium (Al), indium (In), gallium (Ga) and thallium (Tl) formation for example 16 families).Example comprises In _xSe _yAnd Ga _xSe _y, wherein x is that about 1-10 and y are about 1-10.Further, nano flake can be the IB-IIIA family-chalcogenide compound of one or more IB family elements, one or more IIIA family elements and one or more chalcogens.Example comprises CuInGa-Se ₂Other embodiments can with another VIA family element for example but the combination that is not limited to sulphur or multiple VIA family element for example sulphur and selenium the two replace selenides composition.

Be to be understood that being used for printing ink of the present invention can comprise chalcogenide nano flake more than one type.For example, some can comprise the nano flake from IB family-chalcogenide and IIIA family-chalcogenide.In addition can comprise nano flake from different I B family-chalcogenide with different chemical metering ratio.In addition can comprise nano flake from different I IIA family-chalcogenide with different chemical metering ratio.

Randomly, the nano flake in the printing ink 108 can also be the particle of at least a solid solution.In a limiting examples, this nanometer powder can contain copper-gallium solid solution pellet, and at least a in indium particle, indium-gallium solid solution pellet, copper-indium solid solution pellet and the copper particle.As selection, this nanometer powder can contain copper particle and indium-gallium solid solution pellet.

One of advantage of using nano flake base dispersion is, forms the order formation precursor layer of the thin sublayer of precursor layer when merging by pressing, and can change the concentration of element in the precursor layer 106 from top to bottom.Can deposition materials forming first, second layer or sublayer subsequently, and at least a appropriate atmosphere reaction to form the corresponding composition of active layer.In another embodiment, can when deposited seed layer, make this sublayer reaction.Constituting each sublayer can change with the relative concentration of element of the nano flake of printing ink.Therefore, for example, the gallium concentration in the absorbed layer can change with the degree of depth in the absorbed layer.(perhaps the precursor material deposition that disposes can be formed with the controlled overall with expectation stoichiometric proportion in the selected components sublayer to precursor layer 106 if any).Can submit to and all incorporate into by reference for all purposes in the U.S. Patent application 11/243,492 (attorney docket NSL-040) common transfer, common pending trial of this paper and find on October 3rd, 2005 about more details of a kind of method of constituting layer by the sublayer order.

Be to be understood that described film can be by dispersion, for example but be not limited to printing ink, thickener or coating made the layer.The layer of dispersion can be applied on the substrate and annealing to form precursor layer 106.For example can contain the anaerobic nano flake of IB family, IIIA family element and mix these nano flakes and they are joined by formation and prepare dispersion in the carrier, this carrier can comprise carrier fluid (but for example be not limited to solvent) and any additives.

Usually, can be by other some of composition that is usually used in preparing printing ink combines to be dispersed in the carrier that contains dispersant (for example surfactant or polymer) and forms printing ink together with (randomly) with nano flake.In such schemes more of the present invention, without dispersant or other additive preparation printing ink.Carrier fluid can be water-based (water base) or non-aqueous (organic) solvent.Other composition does not restrictedly comprise dispersant, binding agent, emulsifying agent, defoamer, drier, solvent, filler, replenishers, thickener, film adjustment agent, antioxidant, flows and all flat agent, plasticizer and anticorrisive agent.Can under various combinations, add these compositions to improve film quality and to optimize the paintability of this nano flake dispersion.The alternative method of mixing nano flake and preparing dispersion by the nano flake of these mixing subsequently can be, prepare each independent type nano flake independent dispersion and also subsequently these dispersions are mixed.Should be appreciated that some embodiments of described printing ink can be by utilizing carrier fluid and preparing without dispersant owing to the flat shape of described nano flake and the favourable interaction of carrier fluid.

Can on substrate 102, form precursor layer 106 by various based in the paint-on technique of solution any by dispersion, these technology include, but are not limited to wet being coated with, spraying, spin coating, scraper applies, contact print, top charging reversal printing, the bottom feed reversal printing, the nozzle material-feeding reversal printing, intaglio printing, the nick printing, the printing of counter-rotating nick, comma directly prints (comma direct printing), roller coat, the slit die extrusion covers, the Meyer bar type applies, flanging directly applies (lip direct coating), two flanging directly apply, capillary applies, ink jet printing, the jet deposition, jet deposition etc., and the combination of above-mentioned and/or correlation technique.No matter how are particle size or size, aforementioned content goes for any embodiment of this paper.

In some embodiments, can for example micron or the chalcogen powder of submicron-scale be sneaked in the dispersion that contains nano flake so that nano flake and extra chalcogen are deposited simultaneously with extra chalcogen, alloying pellet or simple substance particle.As an alternative can be before or after deposition contains the dispersion of nano flake in independently based on the coating step of solution with the chalcogen powder deposition on substrate.In another embodiment, IIIA family element material for example still can be not limited to the gallium drop mixes with thin slice.This submits to and all incorporates into by reference in the U.S. Patent application 11/243,522 (attorney docket NSL-046) common transfer, common pending trial of this paper on February 23rd, 2006 and obtains more fully describing.This can produce extra play 107 (showing with diplopia) in Fig. 1 C.Randomly, can add extra chalcogen by following combination in any: any chalcogen source that (1) can solution deposition, for example sneak in the precursor layer or as independently Se or the S nanometer or the micron-scale powder of layer deposition, (2) chalcogen (for example Se or S) evaporation, (3) H ₂Se (H ₂S) atmosphere, (4) chalcogen (for example Se or S) atmosphere, (5) H ₂Atmosphere, (6) organic selenium atmosphere, for example diethyl selenide or other organo metallic material, the reducing atmosphere that (7) are other, for example CO and (8) heat treatment.The nano flake that provides as Se/ (Cu+In+Ga+Se) can be about 0-about 1000 with the stoichiometric proportion of extra chalcogen.

The solution-based deposition of the nano flake mixture that attention is proposed not necessarily must be undertaken by these mixtures of deposition in one step.In some embodiments of the present invention, can by successively in two or more steps deposition have different IB-, the IIIA-that form and the nano flake dispersion of chalcogen base particulate is carried out coating step.For example, this method can at first deposit the dispersion that contains InSe nanometer thin slice (ratio that for example has about 1 In/Se), and deposit the dispersion of copper selenide nano flake (ratio that for example has about 1 Cu/Se) and gallium selenide nano flake (ratio that for example has about 1 Ga/Se) subsequently, then randomly deposit the dispersion of Se.This can produce the lamination of three solution-based sedimentary deposits, can be with their sintering together.As selection, can before one deck under the deposition, heat or each layer of sintering.Many different orders are possible.For example, can be as mentioned above w 〉=0 (more than or equal to zero) therein, the Cu of x 〉=0 (more than or equal to zero) and y 〉=0 (more than or equal to zero) _wIn _xGa _yEvenly, the compacted zone top forms In _xGa _ySe _zLayer, wherein x 〉=0 (more than or equal to zero), y 〉=0 (more than or equal to zero) and z 〉=0 (more than or equal to zero), and subsequently this two-layer transformation (sintering) is become CIGS.As selection, Cu _wIn _xGa _yLayer can be at In _xGa _ySe _zEvenly, the compacted zone top forms and subsequently this two-layer transformation (sintering) is become CIGS.

In substituting embodiment, aforesaid nano flake base dispersion can further comprise simple substance IB and/or IIIA nano particle (for example metallic forms).These nano particles can be the nano flake form, perhaps randomly take other shape for example still to be not limited to sphere, elliposoidal, ellipse, cube or other molded non-planar.These particles can also comprise emulsion, melted material, mixture etc. except solid.Cu for example _xIn _yGa _zSe _uMaterial, u wherein〉0 (greater than zero), x 〉=0 (more than or equal to zero), y 〉=0 (more than or equal to zero) and z 〉=0 (more than or equal to zero), can be merged into dispersion with extra selenium source (or other chalcogen) and gallium, this dispersion forms film by sintering on substrate.Can for example form gallium nano particle and/or nanometer bead and/or nano-liquid droplet by the initial emulsion that in solution, produces liquid-gallium.Can be with the heating of gallium metal or the gallium metal in the solvent that has or do not have emulsifying agent with this metal that liquefies, then with its sonicated and/or mechanical agitation in the presence of solvent in addition.Can in the presence of the solvent that has or do not have surfactant, dispersant and/or emulsifying agent, stir with machinery, electromagnetism or acoustically.Gallium nanometer bead and/or nano-liquid droplet can be operated by solid particulate then, by quenching in being equal to or less than the environment of room temperature so that change liquid-gallium nanometer bead into the solid gallium nano particle.Describe this technology in detail in the patent application 11/081,163 that is entitled as " Metallic Dispersion " of Matthew R.Robinson and Martin R.Roscheisen, incorporate its whole disclosures into this paper by reference.

Attention can by before solution deposition and/or the one or more precursor layer sintering, during or use afterwards below combination in any optimize this method: any chalcogen source that (1) can solution deposition, for example sneak in the precursor layer or as the independently Se or the S nanometer powder of layer deposition, (2) chalcogen (for example Se or S) evaporation, (3) H ₂Se (H ₂S) atmosphere, (4) chalcogen (for example Se or S) atmosphere, (5) contain the atmosphere of organic selenium, diethyl selenide for example, (6) H ₂Atmosphere, the reducing atmosphere that (7) are other, CO for example, (8) wet-chemical reduction step, and (9) heat treatment.

Referring now to Fig. 1 C, then can in appropriate atmosphere, handle precursor layer 106 to form film.This film can be a dense film.In one embodiment, this comprises precursor layer 106 is heated to is enough to temperature that printing ink (printing ink of deposition) is changed.Attention solvent and possible dispersant are removed by drying.This temperature can be about 375 ℃-Yue 525 ℃ (are used for handle on aluminium foil or high temperature polymer substrate safe temperature scope).Processing can be carried out under all temps in this scope, for example still is not limited to 450 ℃.In other embodiments, the temperature at substrate place can be about 400 ℃-Yue 600 ℃ on the precursor layer level, but temperature is lower on substrate.If remove some step, the duration of handling can also be reduced by at least about 20%.Heating can be carried out in about 4 minutes-Yue 10 minutes scope.In one embodiment, handle comprise with precursor layer be heated to greater than about 375 ℃ but continue to be less than about 15 minutes time less than the temperature of substrate fusion temperature.In another embodiment, handle comprise with precursor layer be heated to greater than about 375 ℃ but continue 1 minute or less time less than the temperature of substrate fusion temperature.In another embodiment, handle to comprise and precursor layer is heated to annealing temperature but continues about 1 minute or less time less than the substrate fusion temperature.Treatment step can also promote by the heat treatment technics of using at least a following technology: pulse heat treatment, be exposed to laser beam or by IR lamp heating and/or similar or relevant technology.

The atmosphere relevant with the annealing steps among Fig. 1 C also can change.In one embodiment, appropriate atmosphere comprises the atmosphere that contains above about 10% hydrogen.Appropriate atmosphere comprises carbon monoxide atmosphere in another embodiment.Yet the oxygen content that exists in described particle is very low or do not have in the other embodiments of oxygen, and appropriate atmosphere can be blanket of nitrogen, argon atmospher or have the atmosphere that is less than about 10% hydrogen.These other atmosphere can be favourable so that the preparation during material processed become may be improved.

Although it is promising that pulse heat treatment remains usually, for example numerous challenges of directional plasma arc systems face of some pulse heat treatment apparatus.In this instantiation, being enough to provide the heat treated directional plasma arc of pulse system is the system of the high intrinsic heaviness of running cost.The power of this directional plasma arc system requirements certain level, this power make whole system high cost and to the quite big cost of manufacture process increase on energy.The directional plasma arc also demonstrates lag time long between the pulse and therefore makes this system be difficult to cooperate with synchronously with the continuous roll-to-roll system.This system recharges cost between pulse time also produces very slow system or uses the system of more directional plasma arcs, and this increases sharply system cost.

In some embodiments of the present invention, can use other suitable quick heat treatment device, they comprise the pulse layer that uses (the Shtyrokov E I that is used to anneal under adiabatic model, Sov.Phys.Semicond.9 1309), continuous wave laser (10-30W usually) (FerrisS D 1979 Laser-Solid Interactions and Laser Processing (New York:AIP)), pulsed electron bundle device (Kamins T I 1979 Appl.Phys.Leti.35282-5), scanning electron beam system (McMahon R A 1979 J.Vac.Sci.Techno.16 1840-2) (Regolini J L 1979 Appl.Phys.Lett.34 410), other beam system (Hodgson R T 1980 Appl.Phys.Lett.37 187-9), graphite cake heater (Fan J C C 1983 Mater.Res.Soc.Proc.4 751-8) (M W Geis 1980 Appl.Phys.Lett.37 454), lamp system (Cohen R L1978 Appl.Phys.Lett.33751-3), and scanning hydrogen flame system (Downey DF 1982 Solid State Technol.25 87-93).In some embodiments of the present invention, can use nondirectional low density systems.As selection, other known pulse heating technology is also at United States Patent (USP) 4,350, obtains describing in 537 and 4,356,384.In addition, be to be understood that as expired United States Patent (USP) 3,950,187 (" Method and apparatus involvingpulsed electron beam processing of semiconductor devices ") and 4, the pulsed electron beam that relates to solar cell described in 082,958 (" the Apparatus involving pulsed electron beamprocessing of semiconductor devices ") is handled and the quick heat treatment method and apparatus is in public field and be known.United States Patent (USP) 4,729,962 also describe the another kind of known method of the quick heat treatment that is used for solar cell.Above-mentioned can be individually or with above-mentioned or other similar treatment technology and various embodiments of the present invention are single or Multiple Combination is used.

It should be noted that and use nano flake to be created in the precursor layer that becomes solid layer than the low sintering temperature that reaches 50 ℃ of the corresponding layer of ball shaped nano particle usually.This part is owing to surface area contact bigger between the particle.

In certain embodiments of the invention, precursor layer 106 (or in its sublayer any) can order or annealing simultaneously.Described annealing can quickly heat up to about 200 ℃-Yue 600 ℃ plateau temperature range from ambient temperature by substrate 102 and precursor layer 106 and finish.Processing comprises with 1-5 ℃/sec, preferably anneals above heating rate to about 200 ℃-Yue 600 ℃ temperature of 5 ℃/sec.Temperature is remained on plateau range continue part second extremely about 60 minutes time, cooling subsequently approximately.Randomly, handle further to be included in the Se steam heating rate to the about 225 ℃-Yue 575 ℃ temperature that with 1-5 ℃/sec, preferably surpasses 5 ℃/sec and to continue about 60 seconds-this annealed layer selenizing of chien shih when Yue 10 minutes, wherein plateau temperature not necessarily in time keeps constant, comprises the film that one or more contain the chalcogenide of Cu, In, Ga and Se thereby form.Randomly, processing comprises the selenizing that need not independent annealing steps in containing the atmosphere of hydrogen, but can contain H ₂Se or H ₂Continue about 120 seconds-Yue 20 minutes time densification and selenizing in a step with the heating rate that with 1-5 ℃/sec, preferably surpasses 5 ℃/sec in the atmosphere of the mixture of Se steam to about 225 ℃-Yue 575 ℃ temperature.

As selection, can adjust annealing temperature in certain temperature range, to swing rather than to remain on specific plateau temperature.This technology (being referred to herein as rapid thermal treatment or RTA) is particularly suitable for for example still being not limited to form on the aluminium foil photovoltaic active layer (being sometimes referred to as " absorber " layer) in metal foil substrate.But other suitable substrate comprises and is not limited to other metal for example mixture, alloy and the blend of stainless steel, copper, titanium or molybdenum, metallized plastic foil, glass, ceramic membrane and these and similar or associated materials.Substrate can be flexible, for example paper tinsel form, or rigidity, for example plate form, the perhaps combination of these forms.The other details of this technology obtain describing in U.S. Patent application 10/943,685, incorporate this application into this paper by reference.

The atmosphere relevant with annealing steps also can change.In one embodiment, appropriate atmosphere comprises nitrogen atmosphere.Yet the oxygen content that exists in described nano flake is very low or do not have in the other embodiments of oxygen, and appropriate atmosphere can be blanket of nitrogen, argon atmospher, carbon monoxide atmosphere or have the atmosphere that is less than about 10% hydrogen.These other atmosphere can be favourable so that the preparation during material processed become may be improved.

Referring now to Fig. 1 D, handle precursor layer 106 to form dense film 110.In fact dense film 110 can have with the thickness of wet precursor layer 106 compares the thickness that reduces, because removed carrier fluid and other material in the processing procedure.In one embodiment, film 110 can have the thickness of the about 2.5 μ m of about 0.5 μ m-.In other embodiments, the thickness of film 110 can be the about 2.25 μ m of about 1.5 μ m-.In one embodiment, the dense film 110 that is produced can be void-free basically.In some embodiments, dense film 110 has about 5% or littler voidage.In other embodiments, voidage is about 10% or littler.In another embodiment, voidage is about 20% or littler.In another embodiment, voidage is about 24% or littler.In another embodiment, voidage is about 30% or littler.The processing of precursor layer 106 can make nano flake fuse together and remove void space and the thickness of the dense film that reduces thus to be produced under most of situations.

According to the type of material that is used for forming film 110, film 110 can be suitable as absorbed layer or further handle to become absorbed layer.More particularly, film 110 can be the film that a step process produces, or is used in and makes it become film in another step process subsequently of two step process, or is used in the film in the multistep technology.In a step process, form film 110 to comprise that IB-IIIA-VIA compounds of group and film 110 can be the absorber film that is suitable in the photovoltaic device.In two step process, film 110 can be the film of solid and/or densification, and it can have further processing to be suitable as the absorber film of using in photovoltaic device.As a kind of limiting examples, absorbed layer usually serves as in the unit of VIA family that the film 110 in two step process can not contain any and/or q.s.Adding VIA family's element or other material can be second step of this two step process.Can use the mixture of two or more VIA elements, perhaps as being used for for second step that works to use another kind of VIA element to increase by the 3rd step.The method of multiple this material of interpolation comprises printing, use VIA element steam and/or other technology of VIA family element.Be to be understood that in addition that in two step process processing atmosphere can be different.As limiting examples, a kind of atmosphere can randomly be VIA family base atmosphere.As another limiting examples, a kind of atmosphere can be inert atmosphere as described herein.Other treatment step that is used for multistep technology can be the wet-chemical surface treatment improving the IB-IIIA-VIA film surface, and/or volume and the surface property of other rapid thermal treatment to improve the IB-IIIA-VIA film.

Nano flake

Referring now to Fig. 2 A and 2B, embodiment that will more detailed description nano flake 108 of the present invention.Nano flake 108 can have different shape and size.In one embodiment, nano flake 108 can have the big aspect ratio with regard to grain thickness and particle length.Fig. 2 A shows packing density of particle.Fig. 2 A shows that some nano flakes have the thickness of the about 100nm of about 20-.Some can have about 500nm or littler length.The aspect ratio of nano flake can be about 10:1 or bigger (longest dimension of particle and the ratio of the shortest size) in some embodiments.Other embodiments can have about 30:1 or bigger aspect ratio.Can have about 50:1 or bigger aspect ratio in addition.The increase of aspect ratio shows that the shortest relatively size of the longest size increases or the shortest size reduces with respect to the longest size.Therefore, aspect ratio herein relates to the relatively normally the shortest size of sheet thickness of the longest lateral dimension (its length or width).Along the edge or along major axis measure these sizes with provide size for example but be not limited to the measurement result of length, width, the degree of depth and/or diameter.When mentioning a plurality of nano flake with regulation aspect ratio, all nano flakes that refer to composition have the average aspect ratio of defined generally.Be to be understood that the particle distribution of aspect ratios that can exist around average aspect ratio.

As seeing among Fig. 2 A, although the size and dimension of nano flake 108 can change, great majority comprise at least one smooth basically surface 120.This at least one flat surfaces 120 is allowed surface contact bigger between the adjacent nano flake 108.This bigger surface contact provides multiple benefit.Bigger contact allows that the atom that improves between the adjacent particle mixes.For the nano flake that contains more than a kind of element, atom mixes even may exist suitably for particle, but the tight contact in the film allows to be easy to diffusion subsequently.Therefore, be rich in a kind of element slightly as fruit granule, the contact of increase helps the more uniform distribution of element in the dense film that produces.In addition, bigger grain boundary face area causes reaction rate faster.The flat shape of particle makes contact area maximization between particle.The contact area makes the chemical reaction reaction of atom diffusion (for example based on) be able to initiation, catalysis and/or carries out simultaneously relatively apace and on large tracts of land between particle.Therefore, not only this shape is improved and is mixed, and contacts area between bigger interfacial area and particle and also improve reaction rate.

Still with reference to Fig. 2 A, flat shape is also allowed the bulk density of raising.As seeing among Fig. 2 A, nano flake 108 can be arranged essentially parallel to the surface orientation of substrate 102 and one and be stacked on another to form precursor layer 106.Inherently, the geometry of nano flake is allowed in precursor layer than spheric granules or the closer contact of nano particle.In fact, possible is that the flat surfaces of nano flake 100% contacts with another nano flake.Therefore, the prepared film of precursor layer of the ball shaped nano particle printing ink of the same composition substantially the same with using others is compared, and the even shape of nano flake produces higher bulk density in dense film.In some embodiments, the flat shape of nano flake produces the bulk density at least about 70% in precursor layer.In other embodiments, this nano flake produces the bulk density at least about 80% in precursor layer.In other embodiments, this nano flake produces the bulk density at least about 90% in precursor layer.In other embodiments, this nano flake produces the bulk density at least about 95% in precursor layer.

As seeing among Fig. 2 B, nano flake 108 can have different shape.In some embodiments, the nano flake in the printing ink can comprise those with comprise random sizes and/or random shape.On the contrary, particle size is of crucial importance for the spherical nano particle of standard, and those ball shaped nano particles of different size and composition have the dispersion that unstable atom is formed with generation.The flat surfaces 120 of nano flake is allowed the particle that is easier to be suspended in the carrier fluid.Therefore, even nano flake may not be monodispersed dimensionally, form metal and have sheet and provide a kind of particle suspending that makes in carrier fluid and do not have a method of the quick and/or preferential sedimentation of any component but make.In addition, Fig. 2 C is the amplification plan view according to the micron thin slice 121 of one embodiment of this invention.

Be to be understood that to form nano flake 108 of the present invention and/or it is carried out size discrimination and distribute so that the size and dimension that control is more arranged to be provided.The distribution of sizes of nano flake can be to make to depart from a kind of standard deviation of nano flake average length and/or width less than about 250nm.In another embodiment, the distribution of sizes of nano flake can be to make to depart from a kind of standard deviation of nano flake average length and/or width less than about 200nm.In another embodiment, the distribution of sizes of nano flake can be to make to depart from a kind of standard deviation of nano flake average length and/or width less than about 150nm.In another embodiment, the distribution of sizes of nano flake can be to make to depart from a kind of standard deviation of nano flake average length and/or width less than about 100nm.In another embodiment, depart from a kind of standard deviation of nano flake average length less than about 50nm.In another embodiment, depart from a kind of standard deviation of nano flake average thickness less than about 10nm.In another embodiment of the present invention, a kind of standard deviation that departs from the nano flake average thickness is less than about 5nm.Nano flake has the thickness less than about 250nm separately.In another embodiment, nano flake has the thickness less than about 100nm separately.In another embodiment, nano flake has the thickness less than about 50nm separately.In another embodiment, nano flake has the thickness less than about 20nm separately.With regard to its shape, nano flake can have at least about 10 or bigger aspect ratio.In another embodiment, nano flake has at least about 15 or bigger aspect ratio.Nano flake has random flat shape and/or random distribution of sizes.In other embodiments, nano flake has non-random flat shape and/or non-random distribution of sizes.

The stoichiometric proportion of element can change between single nano flake, as long as the total amount in the particle of all merging is under the expectation stoichiometric proportion of precursor layer and/or gained dense film or near this expectation stoichiometric proportion.According to a kind of preferred embodiment of this technology, the element total amount in the film that is produced has Cu/ (In+Ga) compositing range of about 0.7-about 1.0 and Ga/ (In+Ga) compositing range of about 0.05-about 0.30.Randomly, Se/ (In+Ga) can need or can not need subsequently the step of using other Se source that relates to such an extent as to compositing range can be about 0.00-about 4.00.

Nano flake forms

Referring now to Fig. 3, a kind of embodiment of the device that is used to form nano flake 108 will be described.Can be by separately or with combination in any the commercially available charging of simple substance, binary, ternary or the multicomponent material of expectation is applied following multiple technologies and obtain nano flake 108, these technology include, but are not limited to crushing technology, and for example ball milling, pearl mill, little medium milling, blender ball milling, planetary grinding, horizontal ball milling, gravel grind, grind, the grinding of sledge mill, dry grinding, wet lapping, jet grinding or other type.Fig. 3 shows a kind of embodiment of grinding system 130, and its use contains ball or pearl or is used for the grinder 132 of other material of grinding technics.System 130 can be a closed system so that provide oxygen-free environment for the processing of feed material.Inert gas source 134 can be connected with this closed system to keep oxygen-free environment.Can also dispose grinding system 130 to allow cryogrinding by liquid nitrogen or other cooling source 136 (showing with diplopia) are provided.As selection, also can dispose grinding system 130 during grinding technics so that heating to be provided.The circulation that can also during grinding technics, heat and/or cool off.Randomly, grinding can also comprise carrier fluid and/or dispersant are mixed with powder of handling or charging.In one embodiment of the present invention, can have various sizes by the nano flake 108 that grinds generation and for example still be not limited to the about 500nm of thick about 20nm-.In another embodiment, nano flake can thick about 75nm-100nm.

Be to be understood that grinding can use harder and/or have the made pearl of the material of high mass density more or microballon so that feed particles is transformed into suitable dimension and shape than feed particles.In one embodiment, these pearls are glass, pottery, aluminium oxide, porcelain, carborundum or tungsten carbide pearl, have the stainless steel ball of ceramic case, have iron ball of ceramic case or the like, thereby the pollution risk of nano flake is minimized.The parts of grinder itself or grinder also can have the liner of ceramic-lined or other inert material, and perhaps the parts of grinder can be pottery fully or become inertia so that contain the pollution of the slurry of nano flake and minimize with chemical and mechanical means.Can also during technology, regularly sieve this pearl.

Ball milling can carry out in oxygen-free environment.This can relate to the grinder that uses with external environment condition sealing and removing air.Can under inert atmosphere or other oxygen-free environment, carry out so grind.Some embodiments can relate to grinder is placed on to oxygen-free environment to be provided in the cover or chamber of sealing.This technology can comprise carrier drying and outgas or select anhydrous anaerobic solvent to begin and feed in raw material and ingress of air not.Anaerobic is ground and can be produced the anaerobic nano flake, itself so that reduce needs to particle deoxygenation step.This can significantly reduce with the nano flake precursor layer and become the relevant annealing time of dense film.In some embodiments, annealing time is in about 30 seconds scopes.Make (pulverizing) about no air nano flake, be to be understood that the present invention can also comprise airfree dispersion manufacturing and airfree coating, storage and/or processing.

Grinding can be carried out under various temperature.In one embodiment of the present invention, grinding is at room temperature carried out.In another embodiment, grind low temperature for example but be not limited to≤carry out under-175 ℃.This can make grinding to may being that liquid or crisp inadequately particle work so that pulverize under the room temperature.Grind also and can carry out under the grinding temperature of expectation, wherein all precursor granules all are that solid and precursor granules have enough ductility with the original shape formation flat shape from on-plane surface or plane under this grinding temperature.This preferred temperature can be room temperature, more than the room temperature or in the circulation below the room temperature and/or between the different temperatures.In one embodiment, grinding temperature can be lower than about 15 ℃.In another embodiment, this temperature is lower than-175 ℃ approximately.In another embodiment, grinding can be passed through 80K, cooled with liquid nitrogen promptly-193 ℃.Temperature control during the grinding can be controlled possible chemical reaction between solvent, dispersant, feed material and/or the grinder parts.Be to be understood that except above-mentioned temperature can also change in the different times of grinding technics.As a kind of limiting examples, grinding can be carried out under first temperature in initial milling time section and proceed to other temperature for the later time section in process of lapping.

Grinding can make all basically precursor granules be transformed into nano flake.In some embodiments, grinding makes the precursor granules at least about 50% (in the weight of all precursor granules) be transformed into nano flake.In other embodiments, at least 50 volume % of all precursor granules are transformed into nano flake.In addition, be to be understood that during the grinding that temperature can be constant or change.This can be useful to the material character of adjusting feed material or part grinding-material with the particle that produces intended shape, size and/or composition.

Although the invention discloses " (top down) from top to bottom " method that forms nano flake, be to be understood that also and can use other technology.For example, on the surface for example liquid cools bathe material from the melt quenching.Indium (and possible gallium and selenium) nano flake can stir simultaneously by the indium of emulsification fusion and form in cooling bath surface quenching.The wet chemistry, dry chemical, dry-type and physical and/or the wet type physical technique that are to be understood that any preparation thin slice can use (except dry type or case of wet attrition) with the present invention.Therefore, the invention is not restricted to the method from top to bottom (grinding) of wet type physics, but can also comprise dry type/wet type method of (bottom-up) from bottom to top.Should be noted that in addition pulverizing can randomly be a multistep technology.In a kind of limiting examples, this can at first comprise the bulk/sheet that adopts mm size, and they are dry grinded to＜100 μ m, then grinds in one, two, three or more step, and reduces bead size subsequently to nano flake.

Be to be understood that being used for feed particles of the present invention can prepare by several different methods.For example and without limitation, people's such as B.M.Basol United States Patent (USP) 5,985,691 is described a kind of method based on particle and formed IB-IIIA-VIA compounds of group film.Eberspacher and Pauls be at United States Patent (USP) 6,821, describes a kind of technology of making the phase stable precursor of fine particulate form in 559, for example sub-micron multi-element metal particle and comprise the heterogeneous mixed metal particles of at least a metal oxide.Bulent Basol publishes in the patent application 20040219730 in the U.S. and describes a kind of technology that forms compound film, and it comprises the nano-powder material that preparation has controlled total composition and has single solid solution pellet.Use the solid solution method, can make in the form pick-up metal dispersion of gallium with non-oxidized substance---but about at the most 18 relative atom percentage (Subramanian only had, P.R., Laughlin, D.E., Binary Alloy PhaseDiagrams. second edition, Massalski edits, T.B.1990.ASM international, Materials Park, OH, the 1410-1412 page or leaf; Hansen, M., Constitutionof Binary Alloys.1958. second edition, McGraw Hill, 582-584 page or leaf).The mixture that U.S. Patent application 11/081,163 is described a kind of simple substance nano particle that is made of IB, IIIA and optional VIA family element by preparation forms the technology of compound film, and described mixture has controlled total composition.Argumentation about the chalcogenide powder also can be found in the following: [(1) Vervaet, A. etc., E.C.Photovoltaic Sol.Energy Conf., Proc.Int.Conf., 10th (1991), 900-3.; (2) Journal of ElectronicMaterials, Vol.27, No.5,1998, the 433 pages; Ginley etc.; (3) WO99,378,32; Ginley etc.; (4) US6,126,740].These methods can be used for making the charging that remains to be pulverized.Other method can form the particle of the precursor submicron-scale of being ready for solution deposition.All documents of listing are above all incorporated this paper into by reference for all purposes.

The printing ink preparation

In order to prepare the dispersion that is used for precursor layer 106, nano flake 108 is mixed and mix with one or more chemicals, this chemicals includes, but are not limited to dispersant, surfactant, polymer, binding agent, crosslinking agent, emulsifying agent, defoamer, drier, solvent, filler, replenishers, thickener, film and adjusts agent, antioxidant, flowable, all flat agent and anticorrisive agent.

The printing ink made from the present invention can randomly comprise dispersant.Some embodiments can not comprise any dispersant.Dispersant (being also referred to as wetting agent) is the surface reactive material that is used for preventing particle aggregation or flocculation, therefore promotes suspension and the stable dispersion thus made of solid material in liquid medium.If particle surface attracts each other, flocculation then appears, and it often causes assembles and reduction stability and/or uniformity.If particle surface repels mutually, static stabilization then appears, and wherein particle can not be assembled and not trend towards settling from solution very soon.

Effectively dispersant can carry out pigment wetting, dispersion and stable usually.Dispersant is according to the character of printing ink/coating and difference.Polyphosphate, styrene-maleic acid salt and polyacrylate are often used for the water-based preparaton, and derivative of fatty acid and low-molecular-weight modified alkyd resin and mylar are often used for organic preparaton.

Surfactant is to reduce them to be dissolved in wherein the capillary surface-active agents of solvent, and it serves as wetting agent, and surface tension that will (water-based) medium remains on low-level so that printing ink and substrate surface interaction.The surfactant of some type is also as dispersant.Surfactant contains hydrophobicity carbochain and hydrophily polar group usually.This polar group can be a nonionic.If polar group is ionic, electric charge can be a plus or minus, produces cation or anion surfactant.Zwitterionic surfactant contains positive charge and negative electrical charge simultaneously in a part; A kind of example is N-dodecyl-N, the N-dimethyl betaine.Some surfactant often is used as the dispersant of the aqueous solution.Representational kind comprises acetylenediol, derivative of fatty acid, phosphate, polyacrylic acid sodium salt, polyacrylic acid, soybean lecithin, tri octyl phosphine (TOP) and TOPO (TOPO).

Binding agent and resin often are used in dispersion nascent or that form the particle that is close to being kept together.The example of common binding agent comprises acrylic monomer (as monofunctional diluent and multifunctional reactive reagent), acrylic resin (acrylic compounds polyalcohol for example, amine synergist (amine synergists), the propylene oxide acids, the polyester acrylic class, the polyoxyalkylene acrylate class, the styrene/acrylic class, urethane acrylates class or vinylacrylic acid class), alkyd resins (long oil for example, middle oil, short oil or tall oil), adhesion promotor for example still is not limited to PVP (PVP), amide resin, amino resins (for example still being not limited to melamine-based or urea-based compound), pitch/pitch, butadiene acrylonitrile, celluosic resin (for example still is not limited to cellulose acetate-butyrate (CAB), cellulose-acetate propionate (CAP), ethyl cellulose (EC), NC Nitroncellulose (NC) or organic cellulose ester), chlorinated rubber, dimer aliphatic acid, epoxy resin (acrylate for example, bisphenol-A base resin, epoxy UV cured resin, ester, phenol and cresols (novolaks) or based on the compound of phenoxy group), ethene altogether-ter-polymers ethylene acrylic/methacrylic acid for example, E/AA, E/M/AA or ethylene vinyl acetate (EVA), fluoropolymer, gelatin (for example from Florham Park, the Pluronic F-68 of the BASF Corporation of NJ), the dihydroxylic alcohols monomer, hydrocarbon resin is (for example aliphatic, aromatics or coumarone base be indenes for example), maleic resin, modified urea, natural rubber, natural resin and natural gum, rosin, phenol-formaldehyde resin modified, resol, polyamide, polybutadiene (liquid is hydroxy-end capped), polyester (saturated with undersaturated), polyolefin, polyurethane (PU) isocyanates (hexamethylene diisocyanate (HDI) for example, IPDI (IPDI), alicyclic compound, methyl diphenylene diisocyanate (MDI), toluene di-isocyanate(TDI) (TDI) or trimethyl hexamethylene diisocyanate (TMDI)), polyurethane (PU) polyalcohol (caprolactone for example, dimer base polyester, polyester, or polyethers), polyurethane (PU) dispersion (PUDs) is for example based on those of polyester or polyethers, polyurethane prepolymer (caprolactone for example, dimer base polyester, polyester, polyethers and based on the compound of urethane acrylate), polyurethane thermoplastic (TPU) is polyester or polyethers for example, silicate (for example alkyl silicate or waterglass based compound), organosilicon be (amine official energy, epoxy functionalized, ethyoxyl official energy, hydroxyl-functional, methoxy functional, silanol official energy, or vinyl (cinyl) sense), phenylethylene (styrene-butadiene emulsion for example, styrene/ethylene base toluene polymer and copolymer) or vinyl compound (for example polyolefin and polyolefin derivative thing, polystyrene and styrol copolymer, or polyvinyl acetate (PVAC)).

Emulsifying agent is to make liquid and other liquid blend and so be stabilized in the dispersant of the suspension in the solution by promoting aggregate material to be broken into droplet.For example, emulsifying agent, the preparation that is used for oil suction substrate (w/o) used as Water-In-Oil (w/o) emulsion preparation of sorbitan ester, the preparation that is used for w/o type brilliantine, as absorbent again and as nontoxic antifoaming agent.The example of emulsifying agent is a for example NOFABLE SO-992 (Arlacel60) of sorbitan ester, NOFABLE SO-992 (Arlacel 83), sorbitan monolaurate (Span 20), sorbitan monopalmitate (Span 40), sorbitan monostearate (Span 60), sorbitan tristearate (Span 65), dehydrated sorbitol mono-fatty acid ester (Span 80) and sorbitan trioleate (Span 85), they all for example can be from New Castle, and the Uniqema of Delaware buys.Other polymer emulsifier comprises polyoxyl 40 stearate (Myrj 45), polyoxyl 40 stearate (Myrj 49), polyoxyethylene stearate (40) ester (Myrj 52), Vinlub 73 (PEG 400), the surfactant of Aceonon 300 MO (PEG 400 monoleates) and polyoxyl 40 stearate (PEG 400 monostearates) and Tween series, it includes, but are not limited to polyoxyethylene sorbitan monolaurate (Tween 20), polyoxyethylene sorbitan monolaurate (Tween 21), polyoxyethylene sorbitan monopalmitate (Tween 40), polyoxyethylene sorbitan monostearate (Tween 60), polyoxyethylene sorbitan tristearate (Tween 61), polyoxyethylene sorbitan monoleate (Tween 80), polyoxyethylene sorbitan monoleate (Tween 81), with polyoxyethylene sorbitan trioleate (Tween 85), they all for example can be from New Castle, and the Uniqema of Delaware buys.Arlacel, Myrj and Tween are Wilmington, the registered trade mark of the ICI Americans Inc. of Delaware.

May form foam by the release of various Ga-Ses during the coating/typography, especially the typography words of carrying out at a high speed.Surfactant may adsorb and make it stable on liquid-air interface, promotes foam to form.Antifoaming agent prevents to begin to spume, and defoamer makes the foam of prior formation minimize or be removed.Antifoaming agent comprises hydrophobic solid, fat oil and some surfactant, and they all infiltrate liquid-air interface so that foam formation slows down.Antifoaming agent also comprises silicate, organosilicon and does not contain organosilyl material.Do not contain organosilyl material and comprise microwax, mineral oil, polymeric material and silicon-dioxide-substrate and surfactant sill.

Solvent can be water-based (water base) or nonaqueous (organic).Yet group water solution friendly on the environment has than the relative higher capillary shortcoming of organic solvent, makes its more difficult wetting substrate, especially plastic.Substrate when using polymer substrate in order to improve is wetting, can add surfactant to reduce ink surface tension (the stable foaming of surfactant is minimized), simultaneously with the substrate surface modification to improve its surface energy (for example passing through corona treatment).Common organic solvent comprises acetic acid esters, acrylate, alcohol (butanols, ethanol, isopropyl alcohol or methyl alcohol), aldehyde, benzene, methylene bromide, chloroform, carrene, dichloroethanes, trichloroethanes, cyclic compound (for example cyclopentanone or cyclohexanone), ester (for example butyl acetate or ethyl acetate), ether, glycol (for example ethylene glycol or propylene glycol), hexane, heptane, aliphatic hydrocarbon, aromatic hydrocarbons, ketone (acetone for example, methylethylketone or methyl iso-butyl ketone (MIBK)), natural oil, terpenes, terpinol, toluene.

Other component can comprise filler/extender, thickener, rheology modifier, surface conditioner (comprising adhesion promotor/bonding), antigelling agent, antiblocking agent, antistatic agent, chelating/compounding ingredient, corrosion inhibitor, flame proof agent/rust inhibitor, fire retardant, wetting agent, heat stabilizer, light stabilizer/UV absorbent, lubricant, pH stabilizer, Sliding Control material, antioxidant, flow and all flat agent.Be to be understood that all components can add individually or with other combination of components.

Reel-to-reel is made

Referring now to Fig. 4, will describe according to reel-to-reel manufacturing process of the present invention.Use the embodiment of the present invention of nano flake to be suitable for very much the reel-to-reel manufacturing.Particularly, in reel-to-reel manufacturing system 200, flexible substrate 201, for example aluminium foil march to winding volume 204 from supplying with volume 202.Supplying with volume and twining between the volume, substrate 201 is through some spreader 206A, 206B, 206C, nick roller (microgravure rollers) and heater 208A, 208B, 208C.The different layers or the sublayer of each spreader precursors to deposit layer, those for example above-mentioned layers.Heater is used for making different layers and/or sublayer annealing to form dense film.In the example that Fig. 4 describes, spreader 206A and 206B can be coated with the different sublayers of precursor layer (for example precursor layer 106).Heater 208A and 208B can make each sublayer annealing before the next sublayer of deposition.As selection, two sublayers of can annealing simultaneously.Spreader 206C can randomly be coated with the extra material layer that contains chalcogen or alloy or simple substance particle as mentioned above.Heater 208C heats this optional layer and above-mentioned precursor layer.Note also can precursors to deposit layer (or sublayer) depositing any extra layer then and then whole three layers being heated together to be formed for the IB-IIIA-chalcogenide compound film of photovoltaic absorbed layer.Described reel-to-reel system can be the reel-to-reel system that continuous reel-to-reel and/or segmentation reel-to-reel and/or batch mode are handled.

Photovoltaic device

Referring now to Fig. 5, the film of making as mentioned above can serve as the absorbed layer in photovoltaic device, module or the solar panel.A kind of example of described photovoltaic device 300 is shown among Fig. 4.This device 300 comprises base substrate 302, adhesion layer 303, base stage or backplate 304, the p type absorbed layer 306 that comprises the film of the above-mentioned type, n N-type semiconductor N film 308 and the transparency electrode 310 chosen wantonly.For example, base substrate 302 can be by metal forming, polymer such as polyimides (PI), polyamide, polyether-ether-ketone (PEEK), polyether sulfone (PES), Polyetherimide (PEI), PEN (PEN), polyester (PET), relevant polymer, or metallized plastics are made.As non-limiting instance, relevant polymer comprises those polymer with similar structures and/or functional character and/or material properties.Base stage 304 is made by electric conducting material.For example, base stage 304 can be the metal level that thickness can be selected from the about 25 μ m of about 0.1 μ m-.Optional intermediate layer 303 can be introduced between electrode 304 and the substrate 302.Randomly, layer 303 can be that diffusion impervious layer is to prevent the diffuse between substrate 302 and the electrode 304.Diffusion impervious layer 303 can be that conductive layer or it can be nonconducting layers.As non-limiting instance, layer 303 can be made of any in the multiple material, this material includes, but are not limited to chromium, vanadium, tungsten and glass, or the compound any single or Multiple Combination of nitride (comprising tantalum nitride, tungsten nitride, titanium nitride, silicon nitride, zirconium nitride and/or hafnium nitride), oxide, carbide and/or previous materials for example.Although be not limited to following content, the thickness of this layer can be 100nm-500nm.In some embodiments, this layer can be 100nm-300nm.Randomly, thickness can be the about 250nm of about 150nm-.Randomly, thickness can be about 200nm.In some embodiments, can use two barrier layers, one of substrate 302 every side.Randomly, boundary layer can be arranged on the electrode 304 and by constituting: chromium, vanadium, tungsten and glass, or the compound any single or Multiple Combination of nitride (comprising tantalum nitride, tungsten nitride, titanium nitride, silicon nitride, zirconium nitride and/or hafnium nitride), oxide, carbide and/or previous materials for example such as including, but are not limited to following material.

Transparency electrode 310 can comprise that transparency conducting layer 309 and metal (for example Al, Ag, Cu or Ni) finger piece layer 311 are to reduce sheet resistance.

N-N-type semiconductor N film 308 serves as the knot pairing between compound film and transparency conducting layer 309.For example, n-N-type semiconductor N film 308 (be sometimes referred to as knot pairing layer) can comprise for example two or more some combination of cadmium sulfide (CdS), zinc sulphide (ZnS), zinc hydroxide, zinc selenide (ZnSe), n type organic material or these or similar material of inorganic material, perhaps for example n type polymer and/or micromolecule of organic material.The layer of these materials can for example be deposited into the thickness of the about 1000nm of about 2nm-, the more preferably from about about 500nm of 5nm-and the most preferably from about about 300nm of 10nm-by chemical bath deposition (CBD) and/or chemical surface deposition (and/or correlation technique).This can also be configured for use in continuous reel-to-reel and/or segmentation reel-to-reel and/or the batch mode system.

Transparency conducting layer 309 can be inorganic, for example transparent conductive oxide (TCO) for example but be not limited to zinc oxide or the associated materials that tin indium oxide (ITO), the tin indium oxide of fluoridizing, zinc oxide (ZnO) or aluminium mix, it can be with any deposition that includes, but are not limited in the following the whole bag of tricks: sputter, evaporation, CBD, plating, the coating of sol-gel base, spraying, chemical vapor deposition (CVD), physical vapor deposition (PVD), ald (ALD), or the like.As selection, transparency conducting layer can comprise the transparent conductive polymer layer PEDOT (poly--3 that for example mixes alone or in combination, the 4-Ethylenedioxy Thiophene), the hyaline layer of carbon nano-tube or dependency structure or other transparent organic material, it can use spin coating, dip-coating or spraying etc. or with any deposition in the various gas phase deposition technologies.Randomly, be to be understood that between the ZnO that CdS and Al mix and use intrinsic (non-conductive) i-ZnO.Randomly, between layer 308 and transparency conducting layer 309, can comprise insulating barrier.Inorganic and combination organic material also can be used for forming the heterozygosis transparency conducting layer.Therefore, layer 309 can randomly be organic (polymer or conjunct polymer molecules) or (organic and inorganic) of heterozygosis.The example of above-mentioned transparency conducting layer is for example obtaining describing in the common U.S. Patent Application Publication of transferring the possession of 20040187917, and it incorporates this paper by reference into.

Those skilled in the art can be based on the modification of above-mentioned embodiment design in these teachings.For example, notice in embodiments of the invention that part IB-IIIA precursor layer (or some sublayer of precursor layer or other layer in the lamination) can use the deposition techniques except that nano flake base oil China ink.For example precursor layer or constitute the sublayer can be with any deposition in multiple alternative deposition technique, these technology include, but are not limited to solution deposition, for example ALD, evaporation, sputter, CVD, PVD, plating or the like of gas phase deposition technology of ball shaped nano powder base oil China ink.

Referring now to Fig. 6, the flow chart of a kind of embodiment that shows the inventive method will be described.Fig. 6 is presented at step 350, can make nano flake 108 with one of technology as herein described.Randomly, can exist washing step 351 to remove any residue of not expecting.In case make nano flake 108, step 352 shows and can for example still be not limited to carrier fluid preparation printing ink with nano flake and at least a other component.Randomly, be to be understood that embodiments more of the present invention can be merged into step 350 and 352 processing step, shown in frame 353 (showing with diplopia) if manufacturing step produces the preparaton that can apply.As a kind of limiting examples, if between shaping period used dispersant and/or solvent also can be used for forming good coat can be this situation.In step 354, can be with ink coats substrate 102 to form precursor layer 106.Randomly, can exist by such as but be not limited to heat, the dispersant of layer 106 that the method for washing etc. is removed firm coating and/or the step 355 of other residue.Randomly, step 355 can comprise by use such as but the drying device that is not limited to drying tunnel/baker removes the step of desolvating after ink deposition.Step 356 shows handles precursor layer to form dense film, and this dense film can then further be handled to form absorbed layer in step 358.Randomly, be to be understood that if dense film is absorbed layer and the further processing that does not need this film, embodiments more of the present invention can be merged into step 356 and 358 processing step.Step 360 shows can and/or be in contact with it formation N type knot on absorbed layer.Step 362 demonstration can form transparency electrode to produce the lamination that can be used as solar cell on N type knot layer.

Referring now to Fig. 7, be to be understood that in addition and a plurality of devices 300 can be incorporated in the module 400 that it comprises multiple packing, persistence and environmental protection feature so that device 300 can be installed in the outdoor environment to form solar energy module.In one embodiment, module 400 can comprise the framework 402 of support substrates 404, can installing device 300 on substrate 404.This module 400 is simplified mounting process by allowing that a plurality of devices 300 are once installed.As selection, also can adopt form factor flexibly.Be to be understood that in addition encapsulated device and/or layer can be used for being protected from environmental impact.As a kind of limiting examples, encapsulated device and/or layer can stop that moisture and/or oxygen and/or acid rain enter device, especially during lasting environmental exposure.

Extra chalcogen source

Be to be understood that the present invention who uses nano flake can also be with the U.S. Patent application 11/290 of common pending trial, the similar fashion of mode described in 633 (the attorney docket NSL-045) is used extra chalcogen source, wherein precursor material contains 1) chalcogenide for example but be not limited to copper selenide and/or indium selenide and/or gallium selenide and/or 2) source of extra chalcogen, for example still be not limited to, size is less than Se or the S nano particle of about 200nm.In a kind of limiting examples, chalcogenide and/or extra chalcogen can be nano flake and/or nano flake form, and extra chalcogen source can be thin slice and/or non-thin slice.This chalcogenide nano flake can be one or more bianry alloy chalcogenides for example but be not limited to IB family binary chalcogenide nano particle (IB family non-oxidized substance chalcogenide for example, for example Cu-Se, CuS or CuTe) and/or IIIA family chalcogenide nano particle (for example IIIA family non-oxidized substance chalcogenide, for example Ga (Se, S, Te), In (Se, S, Te) and Al (Se, S, Te)).In other embodiments, nano flake can be that non-chalcogenide for example still is not limited to IB and/or IIIA family material for example CuIn, CuGa and/or InGa.If chalcogen is in relatively low temperature (for example, being 220 ℃ for Se, is 120 ℃ for S) fusing, then chalcogen has been in liquid state and has well contacted with the nano flake generation.If then fully heat (for example, at about 375 ℃) nano flake and chalcogen, then the reaction of chalcogen and chalcogenide is to form the IB-IIIA-chalcogenide material of expectation.Referring now to Fig. 8 A-8C, can on substrate 501, carry chalcogenide nano flake 502 and for example be the source 504 of extra chalcogen of the powder type that contains the chalcogen particle.As a kind of limiting examples, this chalcogen particle can be the micron and/or non-oxygen chalcogen (for example Se, S or the Te) particle of submicron-scale, for example hundreds of nanometers of size or be less to several microns.Place the mixture of chalcogenide nano flake 502 and chalcogen particle 504 on the substrate 501 and be heated to and be enough to melt the temperature of extra chalcogen particle 504 to form the liquid chalcogen 506 shown in Fig. 8 B.With liquid chalcogen 506 and chalcogenide 502 be heated to be enough to make liquid chalcogen 506 and chalcogenide 502 reactions temperature to form the dense film 508 of the IB-IIIA family-chalcogenide compound shown in Fig. 1 C.Make the dense film cooling of IB-IIIA family-chalcogenide compound then.

Although be not limited to following content, chalcogenide particle 502 can be begun to obtain by binary chalcogenide feed material, for example the particle of micron-scale or bigger particle.Shown out the example of commercially available chalcogenide material in the following table 1.

Table I

Chemical composition	Chemical formula	Typical case's purity %
Chemical composition	Chemical formula	Typical case's purity %	Aluminum selenide	Al ₂Se ₃	99.5
Aluminium sulfide	Al ₂S ₃	98	Aluminum selenide	Al ₂Se ₃	99.5
Aluminium sulfide	Al ₂S ₃	98	Aluminium sulfide	Al ₂S ₃	99.9
Tellurium aluminium	Al ₂Te ₃	99.5	Aluminium sulfide	Al ₂S ₃	99.9
Tellurium aluminium	Al ₂Te ₃	99.5	Copper selenide	Cu-Se	99.5
Copper selenide	Cu ₂Se	99.5	Copper selenide	Cu-Se	99.5
Copper selenide	Cu ₂Se	99.5	Gallium selenide	Ga ₂Se ₃	99.999
Copper sulfide	Cu ₂S (can be Cu1.8-2S)	99.5	Gallium selenide	Ga ₂Se ₃	99.999
Copper sulfide	Cu ₂S (can be Cu1.8-2S)	99.5	Copper sulfide	CuS	99.5
Copper sulfide	CuS	99.99	Copper sulfide	CuS	99.5
Copper sulfide	CuS	99.99	Tellurium copper	CuTe (typical Cu _1.4Te)	99.5
Tellurium copper	Cu ₂Te	99.5	Tellurium copper	CuTe (typical Cu _1.4Te)	99.5
Tellurium copper	Cu ₂Te	99.5	The sulfuration gallium	Ga ₂S ₃	99.95
The sulfuration gallium	GaS	99.95	The sulfuration gallium	Ga ₂S ₃	99.95
The sulfuration gallium	GaS	99.95	The tellurium gallium	GaTe	99.999
The tellurium gallium	Ga ₂Te ₃	99.999	The tellurium gallium	GaTe	99.999
The tellurium gallium	Ga ₂Te ₃	99.999	Indium selenide	In ₂Se ₃	99.999
Indium selenide	In ₂Se ₃	99.99％	Indium selenide	In ₂Se ₃	99.999
Indium selenide	In ₂Se ₃	99.99％	Indium selenide	In ₂Se ₃	99.9
Indium selenide	In ₂Se ₃	99.9	Indium selenide	In ₂Se ₃	99.9
Indium selenide	In ₂Se ₃	99.9	Indium sulfide	InS	99.999
Indium sulfide	In ₂S ₃	99.99	Indium sulfide	InS	99.999
Indium sulfide	In ₂S ₃	99.99	The tellurium indium	In ₂Te ₃	99.999
The tellurium indium	In ₂Te ₃	99.999	The tellurium indium	In ₂Te ₃	99.999

The example of chalcogen powder and other commercially available charging is being listed in the Table II down.

Table II

Chemical composition	Chemical formula	Typical case's purity %
Chemical composition	Chemical formula	Typical case's purity %	The selenium metal	Se	99.99
The selenium metal	Se	99.6	The selenium metal	Se	99.99
The selenium metal	Se	99.6	The selenium metal	Se	99.6
The selenium metal	Se	99.999	The selenium metal	Se	99.6
The selenium metal	Se	99.999	The selenium metal	Se	99.999
Sulphur	S	99.999	The selenium metal	Se	99.999
Sulphur	S	99.999	Tellurium metal	Te	99.95
Tellurium metal	Te	99.5	Tellurium metal	Te	99.95
Tellurium metal	Te	99.5	Tellurium metal	Te	99.5
Tellurium metal	Te	99.9999	Tellurium metal	Te	99.5
Tellurium metal	Te	99.9999	Tellurium metal	Te	99.99
Tellurium metal	Te	99.999	Tellurium metal	Te	99.99
Tellurium metal	Te	99.999	Tellurium metal	Te	99.999
Tellurium metal	Te	99.95	Tellurium metal	Te	99.999
Tellurium metal	Te	99.95	Tellurium metal	Te	99.5

Print the layer in extra chalcogen source

Referring now to Fig. 9 A-9E, another embodiment of the present invention of using nano flake will be described.Fig. 9 A shows the substrate 602 with the contact layer 604 that forms nano flake precursor layer 606 thereon.Extra chalcogen source can be provided on nano flake precursor layer 606, and it is as containing the discrete layers 608 that extra chalcogen source for example still is not limited to simple substance chalcogen particle 607.For example, and do not lose prevailingly, this chalcogen particle can be the particle of selenium, sulphur or tellurium.Shown in Fig. 9 B, nano flake precursor layer 606 and the layer 608 that contains the chalcogen particle are applied heat 609 they are heated to the temperature that is enough to melt this chalcogen particle 607 and makes the element reaction in chalcogen particle 607 and the precursor layer 606.Be to be understood that nano flake can be made by the multiple material that includes, but are not limited to IB family element, IIIA family element and/or VIA family element.The reaction of the element of chalcogen particle 607 and precursor layer 606 forms the compound film 610 of the IB-IIIA chalcogenide compound shown in Fig. 9 C.Preferably, this IB-IIIA-chalcogenide compound has CuIn _1-xGa _xSe _{2 (1-y)}S _2yForm, 0≤x≤1 and 0≤y≤1 wherein.Be to be understood that in some embodiments, can sintering precursor layer 106 before having layer 108 applies in extra chalcogen source.In other embodiments, do not heat precursor layer 106 in advance but layer 106 and 108 is heated together.

In one embodiment of the present invention, precursor layer 606 can be that the about 0.5 μ m of about 4.0-is thick.The layer 608 that contains chalcogen particle 607 can have the thickness of the about 0.5 μ m of about 4.0 μ m-.Chalcogen particle 607 sizes in the layer 608 can be the about 25 μ m of about 1nm-, and preferred size is the about 300nm of about 25nm-.Note chalcogen particle 607 can be at first greater than the final thickness of IB-IIIA-VIA compound film 610.Thereby chalcogen particle 607 can be mixed preparation with solvent, carrier, dispersant etc. and be adapted on the precursor layer 606 wet deposition with the printing ink or the thickener of cambium layer 608.As selection, can prepare chalcogen particle 607 so that on substrate, deposit with cambium layer 608 by dry method.Be also noted that the heating of the layer 608 that can contain chalcogen particle 607 by for example above-mentioned RTA technology.

Can form chalcogen particle 607 (for example Se or S) with some diverse ways.For example, can be with commercially available detailed catalogue powder (for example 200 orders/75 μ m) initial and powder ball milling to desired size formed Se or S particle.Common ball-milling technology can use the milled ceramic ball that is filled with in liquid medium and can be the ceramic grinding jar of the feed material of powder type.When rotation or when shaking this jar, described ball vibrate also abrasive flour to reduce the particle size of feed material in liquid medium.Randomly, this technology can comprise that the relatively large material of dry type (in advance) grinding for example still is not limited to Se.Dry grinding can be used 2-6mm and littler piece, but also can handle bigger piece.Notice that this is applicable to all pulverizing, wherein technology can be initial with bigger feed material, and dry grinding begins wet-milling (for example still being not limited to ball milling) subsequently.Grinder itself can be from small-sized medium grinder to horizontal rotary ceramic jar.

Referring now to Fig. 9 D, be to be understood that in addition in some embodiments, can below precursor layer 606, form the layer 608 of chalcogen particle.Thereby IB family and the IIIA family element complete reaction of chalcogen particle in chalcogen that precursor layer 606 provides enough surpluses and layer 606 still allowed in layer 608 this position.In addition, because the chalcogen that discharges in the layer 608 can rise by layer 606, this position of layer 608 below layer 606 can be of value to the bigger mixing of generation between element.The thickness of layer 608 can be the about 0.5 μ m of about 4.0 μ m-.In other embodiments, the thickness of layer 608 can be the about 50nm of about 500nm-.In a kind of limiting examples, about 100nm or bigger independent Se layer can be enough.The coating of chalcogen can comprise that (being used alone or in combination) utilizes powder coated, Se to evaporate or other Se deposition process for example still is not limited to chemical vapor deposition (CVD), physical vapor deposition (PVD), ald (ALD), electroplates and/or similar or correlation technique.The material deposition technique of other type can be used for obtaining thickness less than 0.5 μ m or less than the Se layer of 1.0 μ m.Be to be understood that in addition that in some embodiments extra chalcogen source is not limited to only simple substance chalcogen, but can be the alloy and/or the solution of one or more chalcogens in some embodiments.

Randomly, be to be understood that extra chalcogen source can mix with precursor layer and/or be deposited on wherein, rather than as discrete layer.In one embodiment of the present invention, can use the anaerobic particle of chalcogen or the particle of anaerobic basically.If chalcogen is used with nano flake and/or sheet-like precursor material, densification may not can terminate by using the problem of the higher density that the plane particle reaches, and therefore has no reason to get rid of opposite Se and/or other chalcogen source of printing in precursor layer with discrete layers.This may not relate to will be heated to previous treatment temperature by precursor layer.In some embodiments, this may relate to and not be used in about thermosetting film that adds more than 400 ℃.In some embodiments, this may relate to and needn't heat more than 300 ℃ about.

In other embodiments of the present invention, can print multiple material layer and reacting with chalcogen before one deck deposition down.A kind of limiting examples can be a deposition Cu-In-Ga layer, with its annealing, deposits the Se layer then, then handles with RTA, and deposition is rich in another precursor layer of Ga afterwards, and primary depositing Se, and the second last time RTA handles.More generally, this can comprise formation precursor layer (heat or do not heat), apply extra chalcogen source layer (heat then or do not heat) then, then form more precursors (heat or do not heat) of another layer, be the extra chalcogen source (heat then or do not heat) of another layer then, and the number of times that repeats to expect is so that form the crystalline size nucleation that changes or make expectation gradually.In a kind of limiting examples, this can be used for making gallium concentration to change gradually.In another embodiment, this can be used for making copper concentration to change gradually.In another embodiment, this can be used for making indium concentration to change gradually.In another embodiment, this can be used for selenium concentration is changed gradually.In another embodiment, this can be used for selenium concentration is changed gradually.Another reason is that at first the grow film of rich copper begins to add the layer of poor copper to recover stoichiometry then to obtain big crystal.Certain this embodiment can make up to allow that chalcogen is deposited in the precursor layer about any related step.

Referring now to Fig. 9 E, utilize chalcogen for example but the low-melting alternative method that is not limited to Se and S is to form nuclear-shell nano flake, its center is a nano flake 607 and shell 620 is chalcogen coatings.Chalcogen 620 fusing and with the material fast reaction of nuclear nano flake 607.As a kind of limiting examples, endorse be IB family (for example, Cu) and/or IIIA family (mixture of) simple substance particle for example, Ga and In, it can be by obtaining simple substance charging ball milling to desired size.The example of available simple substance feed material is listed in the table below among the III.Described nuclear can also be chalcogenide nuclear or other material as herein described.

Table III

Chemical composition	Chemical formula	Typical case's purity %
Chemical composition	Chemical formula	Typical case's purity %	The copper metal	Cu	99.99
The copper metal	Cu	99	The copper metal	Cu	99.99
The copper metal	Cu	99	The copper metal	Cu	99.5
The copper metal	Cu	99.5	The copper metal	Cu	99.5
The copper metal	Cu	99.5	The copper metal	Cu	99
The copper metal	Cu	99.999	The copper metal	Cu	99
The copper metal	Cu	99.999	The copper metal	Cu	99.999
The copper metal	Cu	99.9	The copper metal	Cu	99.999
The copper metal	Cu	99.9	The copper metal	Cu	99.5
The copper metal	Cu	99.9(O ₂Typical case 2-10%)	The copper metal	Cu	99.5
The copper metal	Cu	99.9(O ₂Typical case 2-10%)	The copper metal	Cu	99.99
The copper metal	Cu	99.997	The copper metal	Cu	99.99
The copper metal	Cu	99.997	The copper metal	Cu	99.99
Gallium metal	Ga	99.999999	The copper metal	Cu	99.99
Gallium metal	Ga	99.999999	Gallium metal	Ga	99.99999
Gallium metal	Ga	99.99	Gallium metal	Ga	99.99999
Gallium metal	Ga	99.99	Gallium metal	Ga	99.9999
Gallium metal	Ga	99.999	Gallium metal	Ga	99.9999
Gallium metal	Ga	99.999	Indium metal	In	99.9999
Indium metal	In	99.999	Indium metal	In	99.9999
Indium metal	In	99.999	Indium metal	In	99.999
Indium metal	In	99.99	Indium metal	In	99.999
Indium metal	In	99.99	Indium metal	In	99.999
Indium metal	In	99.99	Indium metal	In	99.999
Indium metal	In	99.99	Indium metal	In	99.99

The chalcogenide particle of rich chalcogen

Referring now to Figure 10 A-10C, be to be understood that another embodiment of the present invention comprises that wherein the nano flake particle can be the embodiment of the chalcogenide particle (no matter they are IB family chalcogenide, IIIA family chalcogenide or other chalcogenide) of rich chalcogen.In these embodiments, because the chalcogenide particle itself contains excessive chalcogen, therefore may not need to use independent chalcogen source.In a kind of limiting examples of IB family chalcogenide, this chalcogenide can be a copper selenide, and wherein material comprises Cu _xSe _y, x＜y wherein.Therefore, this is the chalcogenide of rich chalcogen, and it can provide excessive selenium when handling the particle of precursor material.

Provide the purpose in extra chalcogen source to be at first to produce liquid to enlarge the contact area between initial solid particle (thin slice) and the liquid.Secondly, when with the film cooperation of poor chalcogen, chalcogen is added to reach the chalcogen amount of stoichiometry expectation in this extra source.The 3rd, chalcogen for example Se is volatile and loses some during handling inevitably.Therefore, main purpose is to produce liquid.Multiple other route is also arranged when handling precursor layer, to increase the amount of liquid.These routes include, but are not limited to: 1) compare Cu _2-x377 ℃ of the Cu-Se (〉 of the richer Se of Se, more liquid more than 523 ℃); 2) and Cu ₂Se equates maybe when the extra Se of interpolation than 220 ℃ of the Cu-Se (〉 of its richer Se); 3) form In ₄Se ₃, or at In ₄Se ₃With In ₁Se ₁Between 550 ℃ of In-Se (〉); 4) and In ₄Se ₃Equate maybe when the extra Se of interpolation than 220 ℃ of the In-Se (〉 of its richer Se); 5) In and In ₄Se ₃Between 156 ℃ of In-Se (〉 owing to produce In preferably in oxygen-free environment); 6) Ga emulsion (〉 is 29 ℃, preferred oxygen-free); Seldom be (but may) Ga-Se.Even when with the cooperation of Se steam, it also still can be very favorable using one of said method or producing extra liquid by suitable method in precursor layer itself.

Referring now to Figure 10 A, be to be understood that printing ink can contain polytype particle.In Figure 10 A, particle 704 is first kind particles and particle 706 is second class particles.In a kind of limiting examples, printing ink can have polytype particle, and the particle that wherein has only a type is chalcogenide but also is rich chalcogen.In other embodiments, printing ink can have such particle, and wherein the chalcogenide at least two types the printing ink is rich chalcogen.As a kind of limiting examples, printing ink can have Cu _xSe _y(wherein x＜y) and In _aSe _b(a＜b) wherein.In other embodiments, printing ink can have particle 704,706 and 708 (showing with diplopia), and wherein at least three types chalcogenide particle is in the printing ink.As limiting examples, the chalcogenide particle of rich chalcogen can be Cu-Se, In-Se and/or Ga-Se.All three kinds can all rich chalcogen.Various combinations are possible excessive chalcogens to obtain to expect.If printing ink has three types particle, be to be understood that it is chalcogenide or rich chalcogen that not every particle all needs.Even in having only one type the printing ink of particle, for example Cu-Se, also can there be for example Cu of x＜y wherein of rich chalcogen particle _xSe _yThe particle of rich chalcogen x wherein for example not〉Cu of y _xSe _yMixture.As a kind of limiting examples, mixture can contain copper selenide particle, and it can have following composition: Cu ₁Se ₁And Cu ₁Se ₂

Still with reference to Figure 10 A, even be to be understood that in addition under the situation of the particle of rich chalcogen, also can be in addition with extra play 710 (showing) with diplopia thus print or be coated to the chalcogen source that provides extra on the printing ink as previously mentioned.Material in this layer can be that bright sulfur belongs to element, chalcogenide or contains the compound of chalcogen.Shown in Figure 10 C,, extra play 710 (showing with diplopia) can also be printed onto on the film that is produced if wish further to handle with chalcogen.

Referring now to Figure 10 B, can apply heat to begin to

particle

704 and 706 with they transformations.Because the different fusion temperatures of the material in the particle, some materials can begin to present liquid form quickly than other material.In the present invention, also discharge excessive chalcogen as liquid 712 if present the particle of liquid form, this liquid can be around other material in this layer and/or element for example 714 and 716, and then this is particularly advantageous.Figure 10 B comprises the view of the enlarged drawing with liquid 712 and material and/or

element

714 and 716.

By the amount of the integrally provided extra chalcogen of whole particles be in handle after on level terms or the level on it of the stoichiometry that exists in the compound.In one embodiment of the present invention, chalcogen excessive comprises the amount bigger than following sum: the 1) stoichiometry and 2 that exists in the final IB-IIIA chalcogenide film) form during the processing of final IB-IIIA-chalcogenide of the stoichiometric proportion with expectation because the minimum of the necessary chalcogen of loss.Although be not limited to following content, excessive chalcogen can serve as flux, and it will liquefy and promote to be mixed by the more thick atom of the particle that excessive chalcogen provided of liquefaction under treatment temperature.Liquefaction excessive chalcogen can also guarantee to exist enough chalcogens with IB and IIIA family element reaction.Excessive chalcogen helps " digestion " or " dissolving " particle or thin slice.Excessive chalcogen will be deviate from from layer before being completed into the film of expectation.

Referring now to Figure 10 C, can continue to apply heat till forming IB-IIIA family chalcogenide film 720.If wish specific feature, can apply another the layer 722 (showing) with diplopia so that the further processing of film 720.As a kind of limiting examples, can add extra gallium source and further react to top layer with film 720.Other source can provide extra selenium to improve the selenizing on film 720 end faces.

Be to be understood that and multiple chalcogenide particle and non-chalcogenide particle can also be made up to reach the excessive supply of the chalcogen of expecting in the precursor layer.Some nonrestrictive arrays that may make up between the non-chalcogenide particle of enumerating in chalcogenide particle that following table (Table IV) has been enumerated in providing and being expert at and the row.

Table IV

	Cu	In	Ga	Cu-In	Cu-Ga	In-Ga	Cu-In-Ga
	Cu	In	Ga	Cu-In	Cu-Ga	In-Ga	Cu-In-Ga	Se	Se+Cu	Se+In	Se+Ga	Se+Cu-In	Se+Cu-Ga	Se+In-Ga	Se+Cu-In-Ga
Cu-Se	Cu-Se+Cu	Cu-Se+In	Cu-Se+Ga	Cu-Se+Cu-In	Cu-Se+Cu-Ga	Cu-Se+In-Ga	Cu-Se+Cu-In-Ga	Se	Se+Cu	Se+In	Se+Ga	Se+Cu-In	Se+Cu-Ga	Se+In-Ga	Se+Cu-In-Ga
Cu-Se	Cu-Se+Cu	Cu-Se+In	Cu-Se+Ga	Cu-Se+Cu-In	Cu-Se+Cu-Ga	Cu-Se+In-Ga	Cu-Se+Cu-In-Ga	In-Se	In-Se+Cu	In-Se+In	In-Se+Ga	In-Se+Cu-In	In-Se+Cu-Ga	In-Se+In-Ga	In-Se+Cu-In-Ga
Ga-Se	Ga-Se+Cu	Ga-Se+In	Ga-Se+Ga	Ga-Se+Cu-In	Ga-Se+Cu-Ga	Ga-Se+In-Ga	Ga-Se+Cu-In-Ga	In-Se	In-Se+Cu	In-Se+In	In-Se+Ga	In-Se+Cu-In	In-Se+Cu-Ga	In-Se+In-Ga	In-Se+Cu-In-Ga
Ga-Se	Ga-Se+Cu	Ga-Se+In	Ga-Se+Ga	Ga-Se+Cu-In	Ga-Se+Cu-Ga	Ga-Se+In-Ga	Ga-Se+Cu-In-Ga	Cu-In-Se	Cu-In-Se+Cu	Cu-In-Se+In	Cu-In-Se+Ga	Cu-In-Se+Cu-In	Cu-In-Se+Cu-Ga	Cu-In-Se+In-Ga	Cu-In-Se+Cu-In-Ga
Cu-Ga-Se	Cu-Ga-Se+Cu	Cu-Ga-Se+In	Cu-Ga-Se+Ga	Cu-Ga-Se+Cu-In	Cu-Ga-Se+Cu-Ga	Cu-Ga-Se+In-Ga	Cu-Ga-Se+Cu-In-Ga	Cu-In-Se	Cu-In-Se+Cu	Cu-In-Se+In	Cu-In-Se+Ga	Cu-In-Se+Cu-In	Cu-In-Se+Cu-Ga	Cu-In-Se+In-Ga	Cu-In-Se+Cu-In-Ga
Cu-Ga-Se	Cu-Ga-Se+Cu	Cu-Ga-Se+In	Cu-Ga-Se+Ga	Cu-Ga-Se+Cu-In	Cu-Ga-Se+Cu-Ga	Cu-Ga-Se+In-Ga	Cu-Ga-Se+Cu-In-Ga	In-Ga-Se	In-Ga-Se+Cu	In-Ga-Se+In	In-Ga-Se+Ga	In-Ga-Se+CuIn	In-Ga-Se+Cu-Ga	In-Ga-Se+In-Ga	In-Ga-Se+Cu-In-Ga
Cu-In-Ga-Se	Cu-In-Ga-Se+Cu	Cu-In-Ga-Se+In	Cu-In-Ga-Se+Ga	Cu-In-Ga-Se+CuIn	Cu-In-Ga-Se+CuGa	Cu-In-Ga-Se+InGa	Cu-In-Ga-Se+Cu-In-Ga	In-Ga-Se	In-Ga-Se+Cu	In-Ga-Se+In	In-Ga-Se+Ga	In-Ga-Se+CuIn	In-Ga-Se+Cu-Ga	In-Ga-Se+In-Ga	In-Ga-Se+Cu-In-Ga

In another embodiment, the present invention can be with multiple chalcogenide particle and the combination of other chalcogenide particle.Some may make up nonrestrictive array between the chalcogenide particle of enumerating in chalcogenide particle that following table (Table V) is enumerated in providing and being expert at and the row.

Table V

	Cu-Se	In-Se	Ga-Se	Cu-In-Se	Cu-Ga-Se	In-Ga-Se	Cu-In-Ga-Se
	Cu-Se	In-Se	Ga-Se	Cu-In-Se	Cu-Ga-Se	In-Ga-Se	Cu-In-Ga-Se	Se	Se+Cu-Se	Se+In-Se	Se +Ga-Se	Se +Cu-In-Se	Se +Cu-Ga-Se	Se +In-Ga-Se	Se +Cu-In-Ga-Se
Cu-Se	Cu-Se	Cu-Se +In-Se	Cu-Se +Ga-Se	Cu-Se +Cu-In-Se	Cu-Se +Cu-Ga-Se	Cu-Se +In-Ga-Se	Cu-Se +Cu-In-Ga-Se	Se	Se+Cu-Se	Se+In-Se	Se +Ga-Se	Se +Cu-In-Se	Se +Cu-Ga-Se	Se +In-Ga-Se	Se +Cu-In-Ga-Se
Cu-Se	Cu-Se	Cu-Se +In-Se	Cu-Se +Ga-Se	Cu-Se +Cu-In-Se	Cu-Se +Cu-Ga-Se	Cu-Se +In-Ga-Se	Cu-Se +Cu-In-Ga-Se	In-Se	In-Se +Cu-Se	In-Se	In-Se +Ga-Se	In-Se +Cu-In-Se	In-Se +Cu-Ga-Se	In-Se +In-Ga-Se	In-Se +Cu-In-Ga-Se
Ga-Se	Ga-Se+Cu-Se	Ga-Se +In-Se	Ga-Se	Ga-Se +Cu-In-Se	Ga-Se +Cu-Ga-Se	Ga-Se +In-Ga-Se	Ga-Se +Cu-In-Ga-Se	In-Se	In-Se +Cu-Se	In-Se	In-Se +Ga-Se	In-Se +Cu-In-Se	In-Se +Cu-Ga-Se	In-Se +In-Ga-Se	In-Se +Cu-In-Ga-Se
Ga-Se	Ga-Se+Cu-Se	Ga-Se +In-Se	Ga-Se	Ga-Se +Cu-In-Se	Ga-Se +Cu-Ga-Se	Ga-Se +In-Ga-Se	Ga-Se +Cu-In-Ga-Se	Cu-In-Se	Cu-In-Se+Cu-Se	Cu-In-Se +In-Se	Cu-In-Se +Ga-Se	Cu-In-Se	Cu-In-Se+Cu-Ga-Se	Cu-In-Se +In-Ga-Se	Cu-In-Se +Cu-In-Ga-Se
Cu-Ga-Se	Cu-Ga-Se+Cu-Se	Cu-Ga-Se +In-Se	Cu-Ga-Se +Ga-Se	Cu-Ga-Se +Cu-In-Se	Cu-Ga-Se	Cu-Ga-Se +In-Ga-Se	Cu-Ga-Se +Cu-In-Ga-Se	Cu-In-Se	Cu-In-Se+Cu-Se	Cu-In-Se +In-Se	Cu-In-Se +Ga-Se	Cu-In-Se	Cu-In-Se+Cu-Ga-Se	Cu-In-Se +In-Ga-Se	Cu-In-Se +Cu-In-Ga-Se
Cu-Ga-Se	Cu-Ga-Se+Cu-Se	Cu-Ga-Se +In-Se	Cu-Ga-Se +Ga-Se	Cu-Ga-Se +Cu-In-Se	Cu-Ga-Se	Cu-Ga-Se +In-Ga-Se	Cu-Ga-Se +Cu-In-Ga-Se	In-Ga-Se	In-Ga-Se+Cu-Se	In-Ga-Se +In-Se	In-Ga-Se +Ga-Se	In-Ga-Se +Cu-In-Se	In-Ga-Se+Cu-Ga-Se	In-Ga-Se	In-Ga-Se +Cu-In-Ga-Se
Cu-In-Ga-Se	Cu-In-Ga-Se+Cu-Se	Cu-In-Ga-Se +In-Se	Cu-In-Ga-Se +Ga-Se	Cu-In-Ga-Se +Cu-In-Se	Cu-In-Ga-Se +Cu-Ga-Se	Cu-In-Ga-Se +In-Ga-Se	Cu-In-Ga-Se	In-Ga-Se	In-Ga-Se+Cu-Se	In-Ga-Se +In-Se	In-Ga-Se +Ga-Se	In-Ga-Se +Cu-In-Se	In-Ga-Se+Cu-Ga-Se	In-Ga-Se	In-Ga-Se +Cu-In-Ga-Se

Nucleating layer

Referring now to Figure 11 A-11C, will describe and use thin slice for example still to be not limited to another embodiment of the present invention of nano flake.This embodiment provides a kind of method, and it is used for by improving crystal growth on the substrate at deposition IB-IIIA family chalcogenide thin layer on the substrate with the nucleation plane of serving as the precursor tunic growth that forms on this IB-IIIA family chalcogenide thin layer.Can before forming precursor layer, deposit, apply or form the nucleating layer of this IB-IIIA family chalcogenide.Can form this nucleating layer with vacuum or antivacuum technology.The precursor layer that forms on nucleating layer can form by the multiple technologies that include, but are not limited to use the printing ink that contains the described a plurality of nano flakes of the application.

Figure 11 A shows can form absorbed layer on substrate 812, shown in Figure 11 A.The surface of substrate 812 can be with contact layer 814 coated with promoting electrically contacting between substrate 812 and the absorbed layer formed thereon.For example, aluminium substrate 812 can be coated with molybdenum contact layer 814.As discussed herein, if use contact layer, be included at formation or material arranged or material layer on the substrate 812 and arrange or to form such material or layer on the contact layer 814.

Shown in Figure 11 B, on substrate 812, be formed into stratum nucleare 816.This nucleating layer can comprise IB-IIIA family chalcogenide and can deposit before forming precursor layer, applies or form.As a kind of limiting examples, this can be cigs layer, Ga-Se layer, any other high-melting-point IB-IIIA family chalcogenide layer or even thin layer of gallium.

Referring now to Figure 11 C,, can on nucleating layer, form precursor layer 818 in case form this nucleating layer.In some embodiments, nucleating layer and precursor layer can form simultaneously.Precursor layer 818 can contain one or more IB family elements and one or more IIIA family elements.Preferably, these one or more IB family elements comprise copper.These one or more IIIA family elements can comprise indium and/or gallium.Precursor layer can be formed by film, for example forms with any technology in the above-mentioned technology.

Still with reference to Figure 11 C, be to be understood that in addition and can in lamination, repeat the nucleating layer alternately and the structure of precursor layer.Figure 11 C shows randomly can form another nucleating layer 820 (showing with diplopia) to continue the nucleating layer alternately and the structure of precursor layer on precursor layer 818.It is stacked to continue to form another precursor layer 822 on nucleating layer 820 then, and this can carry out repetition as required.Although be not limited to following content, can exist 2,3,4,5,6,7,8,9,10 or more groups the nucleating layer that replaces and precursor layer to set up desired characteristics.Each group is compared with other group in the lamination can have different materials or quantity of material.Alternating layer can be solution deposition, vacuum-deposited or the like.Can be by different deposition techniques different layers.In one embodiment, this can comprise solution deposition (or vacuum moulding machine) precursor layer (randomly having the Cu of expectation and the ratio of In and Ga), add subsequently chalcogen (solution-based, vacuum-based or in addition for example but be not limited to steam or H ₂Se etc.), this lamination of heat treatment (during introducing the chalcogen source or afterwards) randomly, deposit other precursor layer (randomly having the Cu of expectation and the ratio of In and Ga) subsequently, and last heat treatment this final lamination (during the other chalcogen of introducing or afterwards).Target is to produce the plane nucleation so that do not exist substrate wherein not by subsequently film forms and/or crystal growth covered hole or zone.Randomly, also can before adding first precursor layer that contains Cu+In+Ga, introduce the chalcogen source.Be to be understood that in addition that in some of the other embodiments layer 820 can be the layer that contains the chalcogen element, for example still be not limited to selenium layer, and with each precursor layer (perhaps finally after forming all precursor layers) heating.

Nucleating layer by means of thermal gradient

Referring now to Figure 12 A-12B, be to be understood that and form the nucleating layer that uses with nano flake based precursor material by in precursor layer 850, producing thermal gradient.As a kind of limiting examples, nucleating layer 852 can begin from the top of precursor layer to form, and perhaps randomly is formed into stratum nucleare 854 by the bottom from precursor layer.In one embodiment of the present invention, nucleating layer can be regarded as the layer of the crystal growth on the another location that the growth of wherein initial IB-IIIA-VIA compound crystal has precedence over precursor layer and/or precursor layer lamination.Make the part of this layer reach to be enough to the temperature that begins crystal growth to be formed into

stratum nucleare

852 or 854 by in precursor layer, producing thermal gradient.Nucleating layer can be that the form with nucleation plane of planar structure basically makes aperture and other irregular formation minimize to promote the more uniform crystal growth of striding substrate simultaneously.

From Figure 12 A, as seen, In one embodiment of the present invention, can produce the thermal gradient that is used for being formed into stratum nucleare 852 by come only treatment temperature to be brought up on the top of precursor layer 850 with laser 856.Thereby laser 856 can be pulse or in addition controlled the whole thickness of precursor layer can be heated to treatment temperature.The back side 858 of precursor layer can contact with the smooth contact surface or the cooler drum of chill roll 862, cooling with the substrate 860 that supports it, and they provide the external refrigeration source to reach treatment temperature with the bottom that prevents described layer.Can on side of substrate and precursor layer adjacent part, provide refrigerating gas 864 in addition so that below the treatment temperature of the nucleation that the temperature of precursor layer is reduced to final IB-IIIA chalcogenide compound when beginning.Be to be understood that the top that other device can be used for heating precursor layer, for example but be not limited to pulse heat treatment, heated by plasma or heat via the IR lamp.

From Figure 12 B, as seen, in another embodiment of the present invention, can be formed into stratum nucleare 854 in the bottom of precursor layer 850 with being similar to above-mentioned those technology.Because can select to be used for substrate 860 of the present invention is heat conduction, so the heating of the downside of substrate also can cause the heating of precursor layer bottom.So the nucleation plane can form along the bottom along the bottom.The top of precursor layer can be cooled off by multiple technologies, for example still is not limited to refrigerating gas, chill roll or other cooling device.

After nucleating layer forms, it is preferably by being equal to or forming near the material of final IB-IIIA chalcogenide compound, whole precursor layer or randomly have only those still more or less untreated parts of precursor layer will be heated to treatment temperature makes remaining material to begin to be converted into the final IB-IIIA chalcogenide compound that contacts with nucleating layer.Nucleating layer guiding crystal forms and makes because the possibility that uneven crystal growth forms aperture or has other irregular area is reduced to minimum.

Be to be understood that except above-mentioned temperature can also change in the different time sections that precursor layer is handled.As a kind of limiting examples, heating can be carried out under first temperature in initial processing time section and proceed to other temperature for subsequently processing time section.Randomly, to such an extent as to this method can comprise that having a mind to produce one or more temperature descends as a kind of limiting examples, this method comprises heating, cooling, heating cooling subsequently.In one embodiment of the present invention, this can relate to temperature is reduced about 50 ℃-Yue 200 ℃ from the temperature in the initial time period.

Nucleating layer by means of chemical gradient

Referring now to Figure 13 A-13F, will more detailed description be formed into the another kind of method of stratum nucleare with nano flake precursor material of the present invention.In this embodiment of the present invention, can select the composition of precursor material layer to make that crystal forms than beginning sooner in the other layer in some layers.Be to be understood that the distinct methods that is formed into stratum nucleare to be combined with promoting layer and form.As a kind of limiting examples, can make up thermal gradient and chemical gradient method and form to promote nucleating layer.The imagination draws the single or Multiple Combination that can be used in combination thermal gradient, chemical gradient and/or film nucleating layer.

Referring now to Figure 13 A, can on substrate 912, form absorbed layer, as shown in FIG. 13A.A surface of substrate 912 can be with contact layer 914 coated with promoting electrically contacting between substrate 912 and the absorbed layer formed thereon.For example, aluminium substrate 912 can be coated with molybdenum contact layer 914.As discussed herein, if use contact layer, be included at formation or material arranged or material layer on the substrate 912 and arrange or to form such material or layer on the contact layer 914.Randomly, being to be understood that in addition can also be on the contact layer 914 and/or direct cambium layer 915 on substrate 912.This layer can be that solution applies, evaporation and/or with the vacuum-based deposition techniques.Although be not limited to following content, layer 915 thickness that can have less than precursor layer 916.In a kind of limiting examples, this layer can the about 100nm of thick about 1-.Layer 915 can be formed by including, but are not limited to following at least a multiple material: IB family element, IIIA family element, VIA family element, IA family element (new style: 1 family), the binary of any aforementioned elements and/or multicomponent alloy, the solid solution of any aforementioned elements, copper, indium, gallium, selenium, the copper indium, the copper gallium, the indium gallium, sodium, sodium compound, sodium fluoride, indium sulfide sodium, copper selenide, copper sulfide, indium selenide, indium sulfide, gallium selenide, the sulfuration gallium, copper indium diselenide, copper indium sulfide, gallium selenide copper, sulfuration gallium copper, the selenizing gallium indium, the sulfuration gallium indium, selenizing gallium indium copper and/or sulfuration gallium indium copper.

Shown in Figure 13 B, on substrate, form precursor layer 916.Precursor layer 916 contains one or more IB family elements and one or more IIIA family elements.Preferably, these one or more IB family elements comprise copper.These one or more IIIA family elements can comprise indium and/or gallium.Precursor layer can form with any technology in the above-mentioned technology.In one embodiment, outside those oxygen in the membrane component except have or be present in accidentally nano flake itself inevitably as impurity, the precursor layer oxygen-free.Although preferably form precursor layer 916, be to be understood that it can randomly form for example evaporation, sputter, ALD etc. by other method with antivacuum method.For example, precursor layer 916 can be the non-oxygen compound that contains copper, indium and gallium.In one embodiment, antivacuum system work under the pressure more than about 3.2kPa (24 holder).Randomly, be to be understood that in addition can also be on precursor layer 916 cambium layer 917.Be to be understood that lamination can have simultaneously the layer 915 and 917, only have one of them or do not have this two-layer.Although be not limited to following content, layer 917 thickness that can have less than precursor layer 916.In a kind of limiting examples, this layer can the about 100nm of thick about 1-.Layer 917 can be formed by including, but are not limited to following at least a multiple material: IB family element, IIIA family element, VIA family element, IA family element (new style: 1 family), the binary of any aforementioned elements and/or multicomponent alloy, the solid solution of any aforementioned elements, copper, indium, gallium, selenium, the copper indium, the copper gallium, the indium gallium, sodium, sodium compound, sodium fluoride, indium sulfide sodium, copper selenide, copper sulfide, indium selenide, indium sulfide, gallium selenide, the sulfuration gallium, copper indium diselenide, copper indium sulfide, gallium selenide copper, sulfuration gallium copper, the selenizing gallium indium, the sulfuration gallium indium, selenizing gallium indium copper and/or sulfuration gallium indium copper.

Referring now to Figure 13 C, can randomly on precursor layer, apply second precursor layer 918 of second precursor material.Second precursor material can have total composition of comparing richer chalcogen with first precursor material in the precursor layer 916.As a kind of limiting examples, by producing two coatings (preferably after two precursor layer coatings of deposition lamination for once heating process), wherein first coating contains and compares wherein the have relative less selenium selenides of (but still enough) with second coating, and this allows the gradient that produces available Se.For example, the precursor of first coating can contain Cu _xSe _y, wherein x is greater than in second coating.Perhaps it can contain Cu _xSe _yThe mixture of particle, the wherein big selenides particle of x of the bigger concentration of existence (by weight).In the current embodiment, each layer preferably has the target stoichiometry, because the C/I/G ratio keeps identical to each precursor layer.Equally, form with antivacuum method, be to be understood that it can randomly pass through for example evaporation of other method, sputter, ALD or the like formation although this second precursor layer 918 is preferred.

Use chalcogen to change gradually or more generally from bottom to top the basic principle that changes gradually of fusion temperature be, go deep into the relative speed of crystallization control and make crystallization for example at the precursor layer laminated bottom than in the faster generation in precursor layer lamination top.Other basic principle is, general grain structure in the usually effective solution deposition CIGS unit still has considerable effciency of energy transfer, wherein this unit has big crystal grain and has little crystal grain overleaf at the top of Photoactive film, and this Photoactive film is the part of main photoactive Photoactive film.Be to be understood that in other embodiments, a plurality of chalcogen gradients that can be used for setting up expectation in many different precursor material layers, perhaps more generally in fusion temperature and/or be frozen into expectation gradient in the final IB-IIIA-chalcogenide compound subsequently, perhaps more generally owing in the film that is produced, produce chemistry (compositions) gradient and/or thermal gradient, melting and/or be frozen into expectation gradient in the final IB-IIIA-chalcogenide compound subsequently.As limiting examples, the present invention can use particle and/or micron thin slice and/or the nano flake with different melting points, for example still is not limited to and higher melt material In ₂Se ₃, Cu ₂Se compare than low melting material Se, In ₄Se ₃, Ga and Cu ₁Se ₁

Referring now to Figure 13 C, apply heat 920 to sinter first precursor layer 916 and second precursor layer 918 into IB-IIIA compounds of group film 922.Can in for example above-mentioned quick thermal annealing process, supply heat 920.Particularly, substrate 912 and precursor layer 916 and/or 918 can be heated to about 200 ℃-Yue 600 ℃ plateau temperature range from ambient temperature.Temperature is remained on lasting second to the about 60 minutes time of part approximately in this plateau range, lower the temperature subsequently.

Randomly, shown in Figure 13 D, be to be understood that the layer 924 that can will contain simple substance chalcogen particle before heating is applied on precursor layer 916 and/or 918.Certainly, if material laminate does not comprise second precursor layer, layer 924 is formed on the precursor layer 916.For example, and do not lose prevailingly, this chalcogen particle can be the particle of selenium, sulphur or tellurium.Can make these particles as mentioned above.Chalcogen particle size in the layer 924 can be the about 25 μ m of about 1nm-, preferred 50nm-500nm.Thereby the chalcogen particle can be mixed preparation with solvent, carrier, dispersant etc. and be adapted on precursor layer 916 and/or 918 wet deposition with the printing ink or the thickener of cambium layer 924.As selection, can prepare the chalcogen particle and be used for being deposited on the substrate with cambium layer 924 by dry method.

Randomly, shown in Figure 13 E, can randomly apply layer 926 that contains extra chalcogen source and/or the atmosphere that contains the chalcogen source to layer 922, if particularly in Figure 13 D, there is not applied layer 924.Thereby can be randomly to layer 922 and layer 926 and/or the atmosphere that contains the chalcogen source apply heat 928 heat they to be enough to melt the chalcogen element source and make the chalcogen source and precursor layer 922 in IB family element and the temperature of IIIA family element reaction.Can in for example above-mentioned quick thermal annealing process, apply heat 928.The reaction of chalcogen source and IB and IIIA family element forms the compound film 930 of the IB-IIIA family chalcogenide compound shown in Figure 13 F.Preferably, this IB-IIIA family chalcogenide compound has formula Cu _zIn _1-xGa _xSe _{2 (1-y)}S _2y, 0≤x≤1,0≤y≤1 and 0.5≤y≤1.5 wherein.

Still with reference to Figure 13 A-13F, be to be understood that also and can use sodium to improve the character of the film that is produced with precursor material.In first method, discuss as just Figure 13 A and 13B, can above the precursor layer 916 and/or below form one or more contain the sodium material layer.This formation can be undertaken by solution coating and/or other technology, for example still is not limited to sputter, evaporation, CBD, plating, the coating of sol-gel base, spraying, chemical vapor deposition (CVD), physical vapor deposition (PVD), ald (ALD) or the like.

Randomly, in the second approach, also can sodium be introduced in the lamination by the doping that the nano flake in the precursor layer 916 and/or particle are carried out.As a kind of limiting examples, nano flake in the precursor layer 916 and/or other particle can be to contain the sodium material, for example still are not limited to Cu-Na, In-Na, Ga-Na, Cu-In-Na, Cu-Ga-Na, In-Ga-Na, Na-Se, Cu-Se-Na, In-Se-Na, Ga-Se-Na, Cu-In-Se-Na, Cu-Ga-Se-Na, In-Ga-Se-Na, Cu-In-Ga-Se-Na, Na-S, Cu-S-Na, In-S-Na, Ga-S-Na, Cu-In-S-Na, Cu-Ga-S-Na, In-Ga-S-Na and/or Cu-In-Ga-S-Na.In one embodiment of the present invention, the sodium content in this nano flake and/or other particle can be less than about 1 atom % or still less.In another embodiment, sodium content can be about 0.5 atom % or still less.In another embodiment, sodium content can be about 0.1 atom % or still less.Be to be understood that and make the particle and/or the thin slice of this doping by several different methods that this method comprises grinds feed material with containing sodium material and/or SODIUM METAL.

Randomly, in the third method, sodium can be introduced printing ink itself, no matter the kind of dispersed particles, nano particle, micron thin slice and/or nano flake how in this printing ink.As a kind of limiting examples, printing ink can comprise nano flake (Na mix or unadulterated) and have the sodium compound of means organic balance ion (but for example be not limited to sodium acetate) and/or have the sodium compound (but for example be not limited to vulcanized sodium) of inorganic counter ion counterionsl gegenions.Be to be understood that the sodium compound that joins (as independent compound) in the printing ink may exist or dissolving as particle (for example nano particle).Sodium can be " aggregation " form and " molecular level dissolving " form of sodium compound (for example discrete particles).

Thereby above-mentioned three kinds of methods none be mutually repel and also can be individually or use the sodium that desired amount is provided to the lamination that contains precursor material with any single or Multiple Combination.In addition, sodium and/or compounds containing sodium can also be added in the substrate and (for example add in the molybdenum target).In addition, if use a plurality of precursor layers (adopting identical or different material), can between one or more precursor layers, form the layer that contains sodium.Be to be understood that those materials that the sodium source is not limited to enumerate previously in addition.As a kind of limiting examples, basically, the alcohol of any deprotonation of being replaced by sodium of proton wherein, organic and the inorganic acid of any deprotonation, the sodium salt of (deprotonation) acid, NaOH, sodium acetate, and the sodium salt of following acid: butyric acid, caproic acid, sad, capric acid, dodecylic acid, tetradecanoic acid, hexadecanoic acid, palmitoleic acid, octadecanoid acid, 9-octadecenoic acid, vaccenic acid, 9,12-octadecadienoic acid, 9,12,15-octatecatrienoic acid and/or 6,9, the 12-octatecatrienoic acid.

Randomly, as seeing among Figure 13 F, being to be understood that in addition can sintering or other joins sodium and/or sodium compound in the chalcogenide film of handling after handling at precursor layer.Therefore this embodiment of the present invention makes the film modification after CIGS forms.When sodium existed, the carrier traps energy level relevant with crystal boundary reduced, and allowed the electronic property of improvement in film.Multiple for example above-named those of sodium material that contain can be deposited on the film of handling annealing then and handle the CIGS film as layer 932.

In addition, can be with sodium material and other element combinations that band gap broadening effect can be provided.Two kinds of elements can realizing this effect comprise gallium and sulphur.Except sodium, the use of one or more these elements can further improve the character of absorbed layer.Sodium compound for example still is not limited to Na ₂S, NaInS ₂Thereby Deng use to film provide simultaneously Na and S and also can with annealing for example but be not limited to the RTA step advance band gap that band gap and unmodified cigs layer or film are provided different layer.

Referring now to Figure 14, embodiment of the present invention can be made compatible with reel-to-reel.Particularly, in reel-to-reel manufacturing system 1000, flexible substrate 1001, for example aluminium foil march to winding volume 1004 from supplying with volume 1002.In the middle of supplying with volume and twining volume, substrate 1001 is through some spreader 1006A, 1006B, 1006C, for example nick roller (microgravure rollers) and heater 1008A, 1008B, 1008C.The different layers or the sublayer of each spreader deposition photovoltaic device active layer, those for example above-mentioned layers.Heater is used for making the annealing of different sublayers.In the example that Figure 14 describes, spreader 1006A and 1006B can be coated with the different sublayers of precursor layer (for example precursor layer 106, precursor layer 916 or precursor layer 918).Heater 1008A and 1008B can make each sublayer annealing before the next sublayer of deposition.As selection, two sublayers of can annealing simultaneously.Spreader 1006C can be coated with the material layer that contains the chalcogen particle as mentioned above.Heater 1008C heats this chalcogen layer and above-mentioned precursor layer.Note also can precursors to deposit layer (or sublayer) deposit then contain the chalcogen element layer and then whole three layers are heated together to be formed for the IB-IIIA-chalcogenide compound film of photovoltaic absorbed layer.

Can change the sum of print steps has the different brackets band gap with structure absorbed layer.For example, can print (and randomly annealing between the print steps) other layer (4 layers, 5 layers, 6 layers or the like) thus in absorbed layer, produce the more band gap of subfractionation.As selection, also can print less film (for example double-deck printing) to produce the less band gap of subfractionation.For above-mentioned embodiment any, the chalcogens that can also have different amounts in each layer are to change the crystal growth that the chalcogen amount that may be existed influences.

In addition, be to be understood that the many combinations that in different layers, can use thin slice and non-plane particle according to the present invention.As a kind of limiting examples, this combination can include, but are not limited to following:

Table VI

Combination 1	1) chalcogenide (thin slice)+non-chalcogenide (thin slice)
Combination 1	1) chalcogenide (thin slice)+non-chalcogenide (thin slice)	Combination 2	2) chalcogenide (thin slice)+non-chalcogenide (non-thin slice)
Combination 3	3) chalcogenide (non-thin slice)+non-chalcogenide (thin slice)	Combination 2
Combination 3		Combination 4	4) chalcogenide (non-thin slice)+non-chalcogenide (non-thin slice)
Combination 5	5) chalcogenide (thin slice)+chalcogenide (thin slice)	Combination 4
Combination 5	5) chalcogenide (thin slice)+chalcogenide (thin slice)	Combination 6	6) chalcogenide (thin slice)+chalcogenide (non-thin slice)
Combination 7	7) chalcogenide (non-thin slice)+chalcogenide (non-thin slice)	Combination 6	6) chalcogenide (thin slice)+chalcogenide (non-thin slice)
Combination 7		Combination 8	8) non-chalcogenide (thin slice)+non-chalcogenide (thin slice)
Combination 9	9) non-chalcogenide (thin slice)+non-chalcogenide (non-thin slice)	Combination 8
Combination 9		Combination 10	10) non-chalcogenide (non-thin slice)+non-chalcogenide (non-thin slice)

Although be not limited to following content, these chalcogenides and non-chalcogenide material can be selected from any material in those that list among Table IV and the V.

The fusion temperature that reduces

In another embodiment of the present invention, can change the material character that the elemental ratio in particle or the thin slice is more expected with generation.In a kind of limiting examples, this embodiment comprise the element that uses the expectation stoichiometric proportion so that in the printing ink used particle have the fusion temperature of reduction.As non-limiting instance, for IB family chalcogenide, the amount of control IB family element and the amount of chalcogen are so that the material that produces moves to the part of the fusion temperature that has reduction in the phasor.Therefore for Cu _xSe _y, the material that the value of selection x and y has the fusion temperature of reduction with generation is as measuring with reference to the phasor of this material.The phasor of following material can find among the Volume 3 Alloy Phase Diagrams (1992) at the ASMHandbook that all incorporates the ASM International of this paper for all purposes by reference into.Some instantiations can find at 2-168,2-170,2-176,2-178,2-208,2-214,2-257 and/or 2-259 page or leaf.

As a kind of limiting examples, copper selenide has multiple fusion temperature according to the ratio of copper in the material and selenium.Solid solution Cu _2-xAll of the richer Se of Se are formed (just pure Cu on the left side and on the pure Se binary phase diagraml on the right right side) can produce liquid selenium.According to composition, fusion temperature can be low to moderate 221 ℃ and (compare Cu ₁Se ₂Richer Se), be low to moderate 332 ℃ (for Cu ₁Se ₁With Cu ₁Se ₂Between composition) and be low to moderate 377 ℃ (for Cu _2-xSe and Cu ₁Se ₁Between composition).523 ℃ and more than, for (～57.9wt%Se) the Cu-Se of richer Se, this material all is a liquid than eutectic.For solid solution Cu _2-x(～composition between 57.9wt%Se) will and just produce solid-state solid solution Cu at 523 ℃ more than it for Se and eutectic _2-xSe and liquid eutectic (～57.9wt%Se).

Another limiting examples comprises gallium selenide, and its ratio according to gallium in the material and selenium can have multiple fusion temperature.Mainly be the ratio Ga of pure Se ₂Se ₃All of richer Se are formed (just pure Ga on the left side and on the pure Se binary phase diagraml on the right right side) can produce liquid more than 220 ℃.By preparation example such as compound Ga ₂Se ₃(perhaps than Ga ₁Se ₁Any compound of richer Se) can prepare and compare Ga ₁Se ₁The Ga-Se of richer Se, but have only when interpolation during other selenium source is and at Ga ₁Se ₁And Ga ₂Se ₃Between or during composition (it be extra selenium source or the Cu-Se of the rich Se) cooperation identical with them, Ga-Se will liquefy under treatment temperature.Therefore, can provide extra Se source to comprise the generation of the liquid of gallium selenide with promotion.

Another limiting examples comprises indium selenide, and its ratio according to indium in the material and selenium can have multiple fusion temperature.Mainly be the ratio In of pure Se ₂Se ₃All of richer Se are formed (just pure In on the left side and on the pure Se binary phase diagraml on the right right side) can produce liquid more than 220 ℃.In is compared in preparation ₁Se ₁The In-Se of richer Se can produce In ₂Se ₃Also has In ₆Se ₇Liquid (perhaps at In ₁Se ₁And the main assembly between the Se), still when handling at In ₁Se ₁And In ₂Se ₃Between or during the composition identical with them, have only by adding other Se source (its for extra selenium source or the Cu-Se of rich Se), this In-Se can liquefy under treatment temperature.Randomly for In-Se, there is another kind of method by on " another " direction, carrying out and using the more liquid of composition generation of the less rich Se left side of binary phase diagraml (just).By using pure In and In ₄Se ₃Between (perhaps according to temperature at In and In ₁Se ₁Between or In and In ₆Se ₇Between) material form, can produce neat liquid In and (perhaps carry out moving of richer Se when eutectic point at 156 ℃ until In from～24.0wt%Se at 520 ℃ ₁Se ₁The time under higher temperature) produce more liquid.Basically, for (～24.0wt%Se) the main assembly of less rich Se, all In-Se can become liquid at 520 ℃ than In-Se eutectic.Certainly, for the poor Se material of these types, will need in other particle a kind of (for example but be not limited to Cu ₁Se ₂And/or Se) or another Se source improve Se content.

Therefore, can under our treatment temperature, produce liquid by following: 1) add independently selenium source, 2) use and compare Cu _2-xThe Cu-Se of the richer Se of Se, 3) use Ga-emulsion (or In-Ga emulsion) or In (in no air ambient), or 4) use and compare In ₁Se ₁The In-Se of less rich Se is though this also may require airfree environment.When using copper selenide, composition can be Cu _xSe _y, wherein x is that about 2-about 1 and y are about 1-about 2.When using indium selenide, composition can be In _xSe _y, wherein x is that about 1-about 6 and y are about 0-about 7.When using gallium selenide, composition can be Ga _xSe _y, wherein x is that about 1-about 2 and y are about 1-about 3.

Be to be understood that and add independently that selenium source can make composition show as richer Se at first on the interface of selenides particle and liquid selenium under treatment temperature.

The chalcogen steam ambient

Referring now to Figure 15 A, another embodiment of the present invention will be described.In this embodiment of using with the nano flake precursor material, be to be understood that the superpressure from chalcogen element steam is used to provide chalcogen atmosphere to be handled and crystal growth to improve film.Figure 15 A has shown that chamber 1050 is together with the substrate 1052 with contact layer 1054 and precursor layer 1056.Indoorly comprise extra chalcogen source 1058 and make it reach the temperature of generation at this by the chalcogen steam of lines 1060 expression.In one embodiment of the present invention, the chalcogen steam is provided so that the dividing potential drop that is present in the chalcogen in the atmosphere more than or equal to following vapour pressure: under treatment temperature and processing pressure, keep the chalcogen dividing potential drop so that the loss of the chalcogen of precursor layer minimizes and the words of wishing provide the precursor layer with extra chalcogen required chalcogen vapour pressure.Part determines this dividing potential drop based on chamber 1050 or precursor layer 1056 residing temperature.Be to be understood that in addition and in chamber 1050, under antivacuum pressure, use the chalcogen steam.In one embodiment, indoor pressure is about atmospheric pressure.According to perfect gas law PV=nRT, be to be understood that the temperature effect vapour pressure.In one embodiment, can have therein or the partially or completely chamber of sealing in the chalcogen source 1062 that is connected with this chamber provides the chalcogen steam by use.In another embodiment of using more unlimited chamber, can provide chalcogen atmosphere by supplying with the source that produces the chalcogen steam.The chalcogen steam can be with helping to keep the chalcogen in the film or providing chalcogen so that precursor layer transforms.Therefore, can use or can provide excessive chalcogen without the chalcogen steam.In some embodiments, compare to film with more chalcogens are provided, this can be used for the chalcogen that keeps film to exist more.Randomly, this can in addition not contain the chalcogen element or not contain chalcogen in the precursor layer of selenium as being incorporated into.Being exposed to the chalcogen steam can under atmospheric pressure take place.These conditions go for any embodiment as herein described.Can bring into chalcogen indoor by carrier gas.Carrier gas can be for example nitrogen, an argon gas etc. of inert gas.This chalcogen atmosphere system can be suitable for the reel-to-reel system.

Referring now to Figure 15 B, demonstrate the present invention and can be fit to use with the reel-to-reel system, the substrate 1070 that wherein has precursor layer can be flexible and be configured to roll up 1072 and 1074.Chamber 1076 can be under vacuum or the antivacuum pressure.Chamber 1076 can be designed to comprise the different valve design so that the loss of the chamber inlet of reel-to-reel substrate 1070 and chamber exit point place chalcogen steam minimizes.

Referring now to Figure 15 C, the chamber 1090 that another embodiment of the present invention is used sufficient size comprises and the relevant any

volume

1072 or 1074 of use reel-to-reel structure to hold entire substrate.

Referring now to Figure 16 A, be to be understood that in addition embodiment of the present invention can also use on rigid substrate 1100.As limiting examples, rigid substrate 1100 can be glass, solar energy glass, low iron glass, green glass, soda-lime glass, steel, stainless steel, aluminium, polymer, pottery, coated polymer or be suitable as solar cell or other rigid material of solar energy module substrate.Can be with high speed pick and place machine device people 1102 with rigid substrate 1100 from piling up or other storage area moves on the processing region.In Figure 16 A, substrate 1100 is placed on the conveyer belt, this conveyer belt makes them move through different process chambers then.Randomly, substrate may live through some processing and may comprise precursor layer on substrate 1,100 1100 this moments.Other embodiment of the present invention can form precursor layer when substrate 1100 passes chamber 1106.

Figure 16 B shows another embodiment of native system, wherein with pick and place machine device people 1110 a plurality of rigid substrate is placed on the conveying arrangement 1112, and this device can then move to processing region shown in arrow 1114.This allows that loading a plurality of substrates 1100 makes them all move together with through being subject to processing then.

Referring now to Figure 17, another embodiment of the present invention will be described.In one embodiment, the particle that is used for forming precursor layer 1500 can comprise the particle as intermetallic particle 1502.In one embodiment, intermetallic material is the material that contains at least two kinds of elements, and wherein the amount of a kind of element in this intermetallic material is less than about 50mol% of the integral molar quantity of that a kind of element in intermetallic material integral molar quantity and/or the precursor material.The amount of second kind of element be variable and also can from this intermetallic material and/or precursor material that a kind of element integral molar quantity be less than about 50mol% to about 50mol% or bigger.As selection, the intermetallic phase material can be made up of two or more metals, wherein with the upper limit of end border solid solution and comprise ratio composite material between the alloy of one of element in about 50% intermetallic material.The distribution of particles that shows in the enlarged drawing of Figure 10 is pure exemplary and is nonrestrictive.Be to be understood that some embodiments can have the particle of the mixture, metallic particles and intermetallic particle or its combination that all contain intermetallic material, metal material and intermetallic material.

Be to be understood that the intermetallic phase material is compound and/or the intermediate solid solution that contains two or more metals, it has and simple metal or different characteristic and the crystal structures of end border solid solution.The intermetallic phase material is to be caused via the diffusion that lattice vacancy enters another kind of material by a kind of material, and described lattice vacancy becomes available because of defective, pollution, impurity, crystal boundary and mechanical stress.After in two or more metal diffusing enter each other, produce intermetallic metal species as two kinds of combinations of materials.The subclass of intermetallic compound comprises electron compound and interstitial compound.

If the metal of two or more mixing relative to each other has different crystal structures, valence state or electropositive, then produce electron compound, example includes, but are not limited to copper selenide, gallium selenide, indium selenide, tellurium copper, tellurium gallium, tellurium indium and the similar and/or relevant material and/or the blend or the mixture of these materials.

Interstitial compound is enough similar to allow that the metal that forms the gap crystal structure or the mixture of metal and nonmetalloid produce the space in this structure between the atom of the suitable another kind of material of a kind of atom of material from what have an atomic size.Have the intermetallic material of monocrystalline phase for every kind of material wherein, two kinds of materials demonstrate two diffraction maximums that are superimposed on the same wave spectrum usually, represent every kind of independently material separately.Therefore intermetallic compound contains the crystal structure of two kinds of materials that comprise usually in same volume.Example includes, but are not limited to Cu-Ga, Cu-In and the similar and/or relevant material and/or the blend or the mixture of these materials, and wherein the composition ratio of every kind of element and other element is in the zone of its phasor except that the solid solution range of end border this material.

Intermetallic material can be used for the formation of the precursor material of CIGS photovoltaic device, wherein metal is with among highly all the mode of even unanimity is dispersed in each other, and wherein every kind of material exists with similar basically amount with respect to other material, allow kinetics fast thus, this is created in all three dimensions and uniform basically high-quality absorber film on nanometer, micron and meso-scale.

When lacking the interpolation that is difficult to synthetic and the indium nanometer particle handled, end border solid solution is difficult for allowing enough that on a large scale precursor material incorporates with correct ratio (for example Cu/ (In+Ga)=0.85) that make in the precursor film can be for the photolytic activity absorbed layer of formation high absorption light into.In addition, end border solid solution can have and intermetallic material and/or the different engineering properties of intermediate solid solution (solid solution between end border solid solution and/or the simple substance).As a kind of limiting examples, the fragility of some end border solid solution is fewer than to be pulverized with grinding.To such an extent as to other embodiments may be can not grind too firmly.The use of intermetallic material and/or intermediate solid solution can solve some in these shortcomings.

Advantage with particle 1502 of intermetallic phase is many-sided.As a kind of limiting examples, the precursor material that is suitable in the thin-film solar cells can contain IB family and IIIA family element, and it for example is respectively copper and indium.If the intermetallic phase of use Cu-In is Cu for example ₁In ₂, then indium be rich In the Cu material a part and do not add as pure indium.Since high yield, little and narrow nanoparticle size branch plant realize the In particle aspect synthetic difficulty and the particle size that needs to increase more costs judge that therefore adding pure indium is challenging as metallic particles.Use the Cu particle of the rich In of intermetallic to avoid pure simple substance In as precursor material.In addition, because the poor Cu of this intermetallic material, thereby this allows advantageously that also independent interpolation Cu accurately reaches the Cu amount of expecting in the precursor material.Cu does not rely on fixing ratio in the alloy that can be produced by Cu and In or the solid solution.Material and Cu measure to reach the stoichiometric proportion of expectation between fine metal as required.The ball milling of these particles not needing to cause particle size to be judged, this reduces cost and improves the output of material preparation process.

In particular more of the present invention, having intermetallic material provides the more flexibility of wide region.Because it is difficult making simple substance indium particle economically, it can be favourable having the indium source that more causes concern economically.In addition, if this indium source allows that also the Cu/ (In+Ga) and the Ga/ (In+Ga) that change in the layer independently of one another can be favourable.As a kind of limiting examples, can be at Cu ₁₁In ₉And Cu ₁In ₂Between distinguish with intermetallic phase.If only use one deck precursor material particularly like this.For this particular instance, if only by Cu ₁₁In ₉Indium is provided, and there are more restrictions in the stoichiometric proportion that can produce in final IB-IIIA-VIA compounds of group.Yet, at Cu as unique indium source ₁In ₂In final IB-IIIA-VIA compounds of group, can produce much bigger ratio ranges down.Cu ₁In ₂Allow in wide region, to change Cu/ (In+Ga) and Ga/ (In+Ga) independently, and Cu ₁₁In ₉Can not.For example, Cu ₁₁In ₉Only allow at Cu/ (In+Ga) 0.92 time Ga/ (In+Ga)=0.25.As another example, Cu ₁₁In ₉Only allow at Cu/ (In+Ga) 0.98 time Ga/ (In+Ga)=0.20.As another example, Cu ₁₁In ₉Only allow at Cu/ (In+Ga) 1.04 times Ga/ (In+Ga)=0.15.Therefore for intermetallic material, particularly when this intermetallic material is unique source of one of the element in the final compound, can produce final compound by stoichiometric proportion: this stoichiometric proportion is probed into Ga/ (In+Ga) boundary of the boundary of Cu/ (In+Ga) of the about 0.7-of compositing range about 1.0 and the about 0.05-of compositing range about 0.3 widelyer.In other embodiments, Cu/ (In+Ga) compositing range can be about 0.01-about 1.0.In other embodiments, Cu/ (In+Ga) compositing range can be about 0.01-about 1.1.In other embodiments, Cu/ (In+Ga) compositing range can be about 0.01-about 1.5.This produces extra Cu usually _xSe _yIf it may be removed later on end face.Be to be understood that these ratios go for any in the above-mentioned embodiment of this paper.

In addition, be to be understood that during handling that intermetallic material can produce than other compound and more many liquid.As a kind of limiting examples, Cu ₁In ₂Will form more liquid when during handling, heating than Cu11In9.More liquid promotes more atom to mix, because material is easier to move and mix when liquid state.

In addition, the intermetallic particle of particular types for example still is not limited to Cu ₁In ₂There is special advantage.Cu ₁In ₂It is metastable material.This material is more prone to decompose, and this will advantageously improve reaction rate (on dynamics) for the present invention.In addition, less oxidation (for example comparing with pure In) and this of tending to of this material further simplified and handled.This material can also be single-phase, and this can make it more even as precursor material, produces better yield.

As seeing in Figure 18 and 19, on substrate 1506 after the sedimentary deposit 1500, can then under appropriate atmosphere, heat so that layer 1500 reaction among Figure 18 and form film shown in Figure 19 1510.Be to be understood that layer 1500 can be used in combination with layer 915 and 917.1 family), the solid solution of the binary of any aforementioned elements and/or multicomponent alloy, any aforementioned elements layer 915 can be formed by including, but are not limited to following at least a various materials: IB family element, IIIA family element, VIA family element, IA family element (new style:.Be to be understood that also can with sodium or sodium sill for example but being not limited to sodium, sodium compound, sodium fluoride and/or indium sulfide sodium and precursor material one is used from layers 915 to improve the character of gained film.Figure 19 shows can also be as about the described use of Fig. 6 F layer 932.Any method of advising previously about sodium content also can be fit to use with the embodiment shown in Figure 17-19.

Be to be understood that other embodiments of the present invention also openly comprise the material of at least two kinds of elements, wherein the amount of at least a element in this material is less than about 50mol% of this element integral molar quantity in the precursor material.This comprises that the amount of IB family element wherein is less than the embodiment of the IIIA family amount of element in the intermetallic material.As a kind of limiting examples, this IB-IIIA family material that can comprise other poor IB family is the Cu of poor Cu for example _xIn _yParticle (x＜y) wherein.The amount of IIIA family material can in officely what is the need in the scope wanted (surpass this element in precursor material about 50mol% or be less than 50mol%).In another limiting examples, Cu ₁Ga ₂Can use with simple substance Cu and simple substance In.Although this material is not an intermetallic material, this material is an intermediate solid solution and different with end border solid solution.The all solids particle all is based on Cu ₁Ga ₂Precursor produces.In this embodiment, do not use emulsion.

In other embodiments of the present invention, can form other feasible precursor material with the IB-IIIA family material of rich IB family.As a kind of limiting examples, can use multiple intermediate solid solution.Cu-Ga (38 atom %Ga) can be used from the precursor layer 1500 with simple substance indium and elemental copper one.In another embodiment, Cu-Ga (30 atom %Ga) can be used from the precursor layer 1500 with elemental copper and simple substance indium one.These two kinds of embodiments are all described the rich Cu material that IIIA family element wherein is less than the about 50mol% of this element in precursor material.In other embodiments, Cu-Ga (heterogeneous, 25 atom %Ga) can be used for forming the precursor layer of expectation with elemental copper and indium.The nano particle that is to be understood that these materials can be by mechanical lapping or other breaking method manufacturing.In other embodiments, these particles can be made by electric detonation silk thread (EEW) processing, evaporative condenser (EC), pulsed plasma process or other method.Although be not limited to following content, particle size can be the about 1 μ m of about 10nm-.They can have Any shape as herein described.

Referring now to Figure 19, in another embodiment of the present invention, can apply, print or form two-layer or multilayer material so that the precursor layer with expectation stoichiometric proportion to be provided in other mode.As a kind of limiting examples, layer 1530 can comprise and has Cu ₁₁In ₉With Ga source for example simple substance Ga and/or Ga _xSe _yPrecursor material.Can on layer 1530, print and contain Cu ₇₈In ₂₈(solid solution) and simple substance indium or In _xSe _yRich copper precursors layer 1532.In such embodiments, the overall rate that is produced can have Cu/ (In+Ga)=0.85 and Ga/ (In+Ga) 0.19.In a kind of embodiment of gained film, this film has the stoichiometric proportion of the Ga/ (In+Ga) of Cu/ (In+Ga) stoichiometric proportion of the about 0.7-of compositing range about 1.0 and the about 0.05-of compositing range about 0.3.

Referring now to Figure 21, be to be understood that in some embodiments of the present invention, intermetallic material as charging or raw material, can be formed particle and/or nano particle by them.As a kind of limiting examples, Figure 21 demonstration is handled to form a kind of intermetallic feed particles 1550 of other particle.Be used to pulverize and/or any method of change of shape can be fit to, it includes, but are not limited to grind, EEW, EC, pulsed plasma process or their combination.Can form particle 552,554,556 and 558.These particles can have that the shape of variation and some particles can only contain intermetallic phase and other particle can contain this phase and other material mutually.

Referring now to Figure 22 A and 22B, thin slice 1600 (micron thin slice and/or nano flake) relatively other aspherical for example but being not limited to platelet (platelet) provides some advantage.Thin slice 1600 provides very effective and piles up (owing to homogeneous thickness on the Z axle) and high surface area (on X and Y-axis).This causes reacting faster, better dynamics and more uniform product/film/compound (having less lateral bine prolongs).The platelet of seeing among Figure 23 A and the 23B 1602 fails to possess all above-mentioned advantages.

Though the present invention is described and illustrates with reference to its some specific embodiments, but one of ordinary skill in the art would recognize that under the situation that does not break away from the spirit and scope of the present invention, can carry out various adjustment, change, improvement, replacement, omission or the increase of technology and rules.For example, for any above-mentioned embodiment, nano flake can be replaced by the micron thin slice and/or mix with it, and wherein the length of this plane micron thin slice and/or maximum transverse size are about 500nm or bigger.The micron thin slice can have separately less than about 5 μ m and greater than the length of about 500nm.The micron thin slice can have the length of the about 500nm of about 3 μ m-separately.Described particle can be the micron thin slice of length greater than 500nm.This particle can be the micron thin slice of length greater than 750nm.The micron thin slice can have about 100nm or littler thickness separately.Described particle can be about 75nm of thickness or littler micron thin slice.This particle can be about 50nm of thickness or littler micron thin slice.The micron thin slice can have the thickness less than about 20nm separately.The micron thin slice can have less than the length of about 2 μ m with less than the thickness of 100nm.The micron thin slice can have less than the length of about 1 μ m with less than the thickness of 50nm.The micron thin slice can have at least about 10 or bigger aspect ratio.The micron thin slice has at least about 15 or bigger aspect ratio.

As what mentioned, embodiments more of the present invention can comprise nano flake and micron thin slice simultaneously.Other embodiment can comprise special in the nano flake size range or the thin slice in the micron lamina dimensions scope.For any above-mentioned embodiment, the micron thin slice can be replaced by micron bar (microrods), and this micron bar is the slender bodies of substantial linear.For any above-mentioned embodiment, nano flake can be replaced by nanometer rods, and this nanometer rods is the material of the elongation of substantial linear.Other embodiments can be with nanometer rods and nano flake combination in precursor layer.Any above-mentioned embodiment can be used in rigid substrate, flexible substrate or both combinations, and this combination for example still is not limited to because its material character becomes the flexible substrate of rigidity during handling.In one embodiment of the present invention, particle can be plate and/or dish and/or thin slice and/or line and/or the rod with micron-scale part.In another embodiment of the present invention, particle can be nano-plates and/or nanometer plate and/or nano flake and/or nano wire and/or the nanometer rods with nano-scale part.

Above-mentioned embodiment for any is to be understood that except above-mentioned, and temperature can also change in the different time sections that precursor layer is handled.As a kind of limiting examples, heating can be carried out under first temperature in initial processing time section and proceed to other temperature for subsequently processing time section.Randomly, to such an extent as to this method can comprise that having a mind to produce one or more temperature descends as a kind of limiting examples, this method comprises heating, cooling, heating and cooling subsequently.For any above-mentioned embodiment, can also in chalcogenide particle and/or the film that is produced, have two or more IB elements.

In addition, can provide concentration, amount and other numeric data with range format herein.Be to be understood that this range format is to use for convenience and succinctly, and should be interpreted as not only comprising the numerical value of clearly enumerating as described range limit neatly, but also comprise all individual number or the subrange that comprises in this scope, all be clear and definite described as each numerical value and subrange.For example, about 1nm should be interpreted as not only comprising the boundary of clear and definite described about 1nm and about 200nm to the size range of about 200nm, but also comprises for example 2nm, 3nm, 4nm and subrange 10nm to 50nm for example of individual other size, 20nm to 100nm etc.

For example, other embodiments of the present invention can be used the Cu-In precursor material, and wherein the Cu-In contribution is less than about 50% Cu that exists and In in precursor material.Remaining amount is introduced by simple substance form or by non-IB-IIIA alloy.Therefore, Cu ₁₁In ₉Can use to form the film of gained with simple substance Cu, In and Ga.In another embodiment, for example Cu-Se, In-Se and/or Ga-Se can replace simple substance Cu, In and Ga as IB or IIIA family material source to other material.Randomly, in another embodiment, the IB source can be any particle (Cu, Cu-Se) that does not comprise not with the Cu of In and Ga alloying.The IIIA source can be any particle that contains Ga (Ga, Ga-Se or In-Ga-Se) that does not have any particle that contains In (In-Se, In-Ga-Se) of Cu or do not have Cu.Other embodiments can have these combinations of the IB material of nitride or oxide form.Other embodiments can have these combinations of the IIIA material of nitride or oxide form.The present invention can use any combination of element and/or can use selenides (binary, ternary or polynary).Randomly, some of the other embodiments can be used for example In of oxide ₂O ₃To add the material of desired amount.Be to be understood that for any above-mentioned embodiment and can use, can also use heterogeneous alloy and/or alloy more generally more than a kind of solid solution.For any above-mentioned embodiment, annealing process can also comprise that compound film is exposed under the gas, such as H ₂, CO, N ₂, Ar, H ₂The combination or the blend of Se, Se steam or these gases.Be to be understood that in addition on the lamination that Se can be evaporated or be printed onto a plurality of layers so that handle.

Be to be understood that in addition some intermediate solid solutions also can be fit to use according to the present invention.As limiting examples, the δ of Cu-In in mutually composition (the about 44.3wt% In of about 42.52-) and/or the δ of Cu-In mutually and Cu ₁₆In ₉Between composition can be to be suitable for being used for forming material between the suitable metal of IB-IIIA-VIA compounds of group with the present invention.Be to be understood that these intermetallic material can with simple substance or other material for example Cu-Se, In-Se and/or Ga-Se mix so that IB or IIIA family material source to be provided, thereby reach the stoichiometric proportion of the expectation in the final compound.Other limiting examples of intermetallic material comprise between the Cu-Ga composition that contains following phase: γ 1 (the about 39.8wt% Ga of about 31.8-), γ 2 (the about 39.9wt% Ga of about 36.0-), γ 3 (the about 44.9wt% Ga of about 39.7-), γ 2 and the γ 3 mutually, phase and θ (the about 68.7wt% Ga of about 66.7-) between end border solid solution and the γ 1.For Cu-Ga, suitable composition also is present in end border solid solution and is only second in the scope between its intermediate solid solution.Advantageously, some in these intermetallic material can be heterogeneous, and they more may produce the fragile material that can carry out mechanical lapping.The phasor of following material can find among the Volume 3 AlloyPhase Diagrams (1992) at the ASM Handbook that all incorporates the ASM International of this paper for all purposes by reference into.Some instantiations (all incorporating this paper by reference into) can find at 2-168,2-170,2-176,2-178,2-208,2-214,2-257 and/or 2-259 page or leaf.

The publication that this paper discussed or quoted only provided before the submission date that is disclosed in the application owing to them.Here should not be construed as and admit that the present invention does not have qualification to pass through formerly to invent prior to these publications.In addition, the open date that provides can be different with the open date of reality, and this needs independent the confirmation.All publications of by reference this paper being mentioned are incorporated this paper into, so that disclosure and description structure and/or the method relevant with the publication of being quoted.For all purposes are also incorporated following application into this paper by reference: the U.S. Patent application 11/290 that on November 29th, 2005 submitted to, 633, be entitled as " CHALCOGENIDE SOLAR CELLS ", the U.S. Patent application 10/782 that on February 19th, 2004 submitted to, 017, be entitled as " SOLUTION-BASEDFABRICATION OF PHOTOVOLTAIC CELL ", the U.S. Patent application 10/943 that on September 18th, 2004 submitted to, 657, be entitled as " COATED NANOPARTICLES AND QUANTUMDOTS FOR SOLUTION-BASED FABRICATION OF PHOTOVOLTAIC CELLS ", with the U.S. Patent application of submitting on March 16th, 2,005 11/081,163, be entitled as " METALLICDISPERSION ", with the U.S. Patent application of submitting on September 18th, 2,004 10/943,685, be entitled as " FORMATION OF CIGS ABSORBER LAYERS ON FOIL SUBSTRATES ", 11/361 of submission on February 23rd, 2006,433, with 11/394 of submission on March 30th, 2006,849, its whole disclosures are incorporated this paper by reference into.

Though above-mentioned is the complete description of the preferred embodiment of the invention, can use various alternative, modifications and equivalent.Therefore, should not determine scope of the present invention with reference to above-mentioned specification, phase reaction is determined scope of the present invention according to the full breadth of claims and their equivalent.Preferably whether no matter preferably whether no matter any feature, all can combine with any further feature.In the following claims, Indefinite article " one ", or " a kind of "The quantity that is meant the project behind the described article is one or more, unless spell out in addition.Claims should not be construed as and comprise that device adds the restriction of function, unless use phrase " be used for ... device " in given claim, spell out this restriction.

Claims

1. method, it comprises:

On substrate, form precursor layer; With

In one or more steps, make this precursor layer reaction to form absorbed layer.

2. method, it comprises:

Preparation particle printing ink, wherein about 50% or more particles be to contain at least aly separately from the element of IB, IIIA and/or VIA family and thin slice with aspheric flat shape, the total amount from the element of IB, IIIA and/or VIA family that comprises in the wherein said printing ink makes this printing ink have the element chemistry metering ratio of expectation;

With this ink coats substrate to form precursor layer; With

In appropriate atmosphere, handle this precursor layer to form dense film;

Wherein at least one group of particle in this printing ink is the intermetallic plane particle that contains at least a IB-IIIA family intermetallic alloy phase.

3. the process of claim 1 wherein that at least one group of particle in the dispersion is nanometer bead form.

4. the process of claim 1 wherein that at least one group of particle in the dispersion is nanometer bead form and contains at least a IIIA family element.

5. the process of claim 1 wherein that at least one group of particle in the dispersion is the nanometer bead form that comprises the IIIA family element of simple substance form.

6. the process of claim 1 wherein that intermetallic phase is not an end border solid solution phase.

7. the process of claim 1 wherein that intermetallic phase is not the solid solution phase.

8. the process of claim 1 wherein that the contribution of intermetallic particle is less than the IB family element that exists of about 50mol% in all particles.

9. the process of claim 1 wherein that the contribution of intermetallic particle is less than the IIIA family element that exists of about 50mol% in all particles.

10. the process of claim 1 wherein that contribution in the dispersion of intermetallic particle on being deposited on substrate is less than the IB family element of about 50mol% and is less than the IIIA family element of about 50mol%.

11. the process of claim 1 wherein that contribution in the dispersion of intermetallic particle on being deposited on substrate is less than the IB family element of about 50mol% and more than the IIIA family element of about 50mol%.

12. the process of claim 1 wherein that contribution in the dispersion of intermetallic particle on being deposited on substrate is more than the IB family element of about 50mol% be less than the IIIA family element of about 50mol%.

13. the method for claim 10, wherein molar percentage is based on the integral molar quantity of the element in all particles that exist in the described dispersion.

14. it is crystalline to the process of claim 1 wherein that at least some particles have a sheet.

15. it is crystalline to the process of claim 1 wherein that most of particle has a sheet.

16. it is crystalline to the process of claim 1 wherein that all particles have a sheet.

17. the process of claim 1 wherein that deposition step comprises uses the dispersion coated substrate.

18. the process of claim 1 wherein that dispersion comprises emulsion.

19. the process of claim 1 wherein that intermetallic material is a binary material.

20. the process of claim 1 wherein that intermetallic material is a ternary material.

21. the process of claim 1 wherein that intermetallic material comprises Cu ₁In ₂

22. the process of claim 1 wherein that intermetallic material comprises Cu ₁In ₂The composition of δ phase.

23. the process of claim 1 wherein that intermetallic material comprises Cu ₁In ₂δ mutually and Cu ₁₆In ₉Composition between the phase that limits.

24. the process of claim 1 wherein that intermetallic material comprises Cu ₁Ga ₂

25. the process of claim 1 wherein that intermetallic material comprises Cu ₁Ga ₂Intermediate solid solution.

26. the process of claim 1 wherein that intermetallic material comprises Cu ₆₈Ga ₃₈

27. the process of claim 1 wherein that intermetallic material comprises Cu ₇₀Ga ₃₀

28. the process of claim 1 wherein that intermetallic material comprises Cu ₇₅Ga ₂₅

29. the process of claim 1 wherein that intermetallic material comprises the Cu-Ga composition mutually between end border solid solution and the intermediate solid solution that is only second to it.

30. the process of claim 1 wherein that intermetallic material comprises γ ₁The Cu-Ga of phase forms (the about 39.8wt% Ga of about 31.8-).

31. the process of claim 1 wherein that intermetallic material comprises γ ₂The Cu-Ga of phase forms (the about 39.9wt% Ga of about 36.0-).

32. the process of claim 1 wherein that intermetallic material comprises γ ₃The Cu-Ga of phase forms (the about 44.9wt% Ga of about 39.7-).

33. the process of claim 1 wherein that intermetallic material comprises the Cu-Ga composition (the about 68.7wt% Ga of about 66.7-) of θ phase.

34. the process of claim 1 wherein that intermetallic material comprises γ ₂With γ ₃Between the Cu-Ga of phase form.

35. the process of claim 1 wherein that intermetallic material comprises end border solid solution and γ ₁Between the Cu-Ga of phase form.

36. the process of claim 1 wherein that intermetallic material comprises the Cu-Ga of rich Cu.

37. the process of claim 1 wherein that gallium is as the form of suspension introducing of IIIA family element with the nanometer bead.

38. the method for claim 37 wherein forms gallium nanometer bead by the emulsion that produces liquid gallium in solution.

39. the method for claim 37, wherein with gallium in the following quenching of room temperature.

40. the method for claim 37, it further comprises by stirring, mechanical device, calutron, Vltrasonic device and/or adds dispersant and/or emulsifying agent keeps or improves the dispersion of liquid gallium in solution.

41. the method for claim 1, it further comprises interpolation, and one or more are selected from the mixture of following simple substance particle: aluminium, tellurium or sulphur.

42. the process of claim 1 wherein appropriate atmosphere contain following one of at least: selenium, sulphur, tellurium, H ₂, CO, H ₂Se, H ₂S, Ar, N ₂Or their combination or mixture.

43. it is following at least a to the process of claim 1 wherein that appropriate atmosphere contains: H ₂, CO, Ar and N ₂

44. the process of claim 1 wherein that a class or multiclass are particle doped has one or more inorganic material.

45. the process of claim 1 wherein the particle doped inorganic material that has one or more to be selected from aluminium (Al), sulphur (S), sodium (Na), potassium (K) or lithium (Li) of a class or multiclass.

46. a method, it comprises:

Preparation particle printing ink, wherein most of particles are to contain at least aly from the element of IB, IIIA and/or VIA family and the nano flake with aspheric flat shape separately, and the total amount from the element of IB, IIIA and/or VIA family that comprises in the wherein said printing ink makes this printing ink have the element chemistry metering ratio of expectation;

With this ink coats substrate to form precursor layer; With

Handle the dense film that this precursor layer is grown with the semiconductor absorber that is formed for photovoltaic device;

Wherein at least one group of particle in this printing ink is the intermetallic nano flake particle that contains at least a IB-IIIA family intermetallic alloy phase.

47. a method, it comprises:

With this ink coats substrate to form precursor layer; With

In appropriate atmosphere, handle this precursor layer to form dense film.

48. the method for claim 47, wherein at least one group of particle in the dispersion is nanometer bead form.

49. the method for claim 47, wherein at least one group of particle in the dispersion is nanometer bead form and contains at least a IIIA family element.

50. the method for claim 47, wherein at least one group of particle in the dispersion is the nanometer bead form that comprises the IIIA family element of simple substance form.

51. the method for claim 47, wherein intermetallic phase is not an end border solid solution phase.

52. the method for claim 47, wherein intermetallic phase is not the solid solution phase.

53. the method for claim 47, wherein the contribution of intermetallic particle is less than the IB family element that exists of about 50mo l% in all particles.

54. a method, it comprises:

With this ink coats substrate to form precursor layer; With

55。The method of claim 54, wherein at least 80% particle is a nano flake.

56. the method for claim 54, wherein at least 90% particle is a nano flake.

57. a composition, it comprises:

The a plurality of particles that comprise IB and/or IIIA family element and randomly at least a VIA family element;

Wherein at least one group of particle is the nano flake that contains at least a IB-IIIA family intermetallic alloy phase.

58. a material, it comprises:

Material is formed a plurality of nano flakes contain at least a element from IB, IIIA and/or VIA family;

Wherein prepare described nano flake with the precursor granules that certain precursor consists of feature by grinding, this precursor is formed the ductility that provides enough forming flat shape from nonplanar original shape when grinding, and the total amount of the IB, the IIIA that wherein comprise in the precursor granules that merges and/or VIA family element is in the element chemistry metering ratio of expectation.

59. the material of claim 1, wherein the precursor granules of grinding at least 50% is transformed into nano flake.

60. the material of claim 1, wherein the precursor granules of grinding at least 95% is transformed into nano flake.

61. the material of claim 1, wherein grinding is transformed into nano flake with all basically precursor granules.

62. the material of claim 1, wherein precursor granules is 10 μ m or bigger along its longest dimension measurement the time.

63. the material of claim 1 wherein grinds and carries out in oxygen-free atmosphere to produce the anaerobic nano flake.

64. the material of claim 1 wherein grinds and carries out in inert gas atmosphere to produce the anaerobic nano flake.

65. the material of claim 1 wherein grinds and at room temperature carries out.

66. the material of claim 1 wherein grinds and carries out at low temperatures.

67. the material of claim 1 wherein grinds all elements in this precursor granules therein and all be under the grinding temperature of solid and carry out, and precursor granules has enough ductility to form flat shape from nonplanar original shape under this grinding temperature.

68. the material of claim 1 wherein grinds being lower than under 15 ℃ the temperature and carries out.

69. the material of claim 1 wherein grinds under the temperature that is being lower than-200 ℃ and carries out.

70. the material of claim 1, wherein precursor granules is single metallic particles.

71. the material of claim 1, wherein precursor granules is the simple substance particle.

72. the material of claim 1, wherein precursor granules is an alloying pellet.

73. the material of claim 1, wherein precursor granules is the bianry alloy particle.

74. the material of claim 1, wherein precursor granules is the ternary alloy three-partalloy particle.

75. the material of claim 1, wherein precursor granules is the quaternary alloy particle.

76. the material of claim 1, wherein precursor granules is a solid solution pellet.

77. the material of claim 1, wherein nano flake only comprises IIIA family material.

78. the material of claim 1, wherein nano flake only comprises IB family and IIIA family material.

79. the material of claim 1, wherein nano flake only comprises IB family and VIA family material.

80. the material of claim 1, wherein nano flake only comprises IIIA family and VIA family material.

81. the material of claim 1, the mol ratio of IB family material in wherein a plurality of nano flakes and IIIA family material is greater than 1.0.

82. the material of claim 1, wherein precursor granules is the simple substance particle and wherein grinds formation alloy nano thin slice from this simple substance particle.

83. the material of claim 1, wherein precursor granules is the chalcogenide particle, and this particle is characterised in that following element chemistry metering ratio: this stoichiometric proportion provides enough ductility to form flat shape from nonplanar original shape to precursor granules.

84. the material of claim 1, wherein precursor granules is selected from one of following: copper selenide, indium selenide or gallium selenide.

85. the material of claim 1, wherein the metering of the element chemistry between the nano flake is than changing, as long as the total amount in the nano flake of all merging is in the stoichiometric proportion of expectation.

86. the material of claim 1, it further comprises nano flake is carried out size discrimination to get rid of the nano flake greater than desired length.

87. the material of claim 1, it further comprises nano flake is carried out size discrimination to get rid of the nano flake greater than expectation thickness.

88. the material of claim 1, its further comprise to nano flake carry out size discrimination with the change in size of control nano flake to as lower deviation: less than about 30% of about 30% and average thickness of average length.

89. the material of claim 1, a kind of standard deviation that wherein departs from the nano flake average thickness is less than 10nm.

90. the material of claim 1, a kind of standard deviation that wherein departs from the nano flake average thickness is less than 5nm.

91. the material of claim 1, it further comprises the coated materials nano flake that contains VIA family element with one deck at least.

92. the material of claim 1, it further comprises the coated materials nano flake that contains selenium and/or selenides with one deck at least.

93. the material of claim 1, wherein nano flake forms dried powder.

94. the material of claim 1, wherein nano flake has at least about 10 or bigger aspect ratio.

95. the material of claim 1, wherein nano flake has at least about 15 or bigger aspect ratio.

96. the material of claim 1, wherein nano flake contains sodium.

97. the material of claim 1, wherein nano flake contains at least a in the following material: Cu-Na, In-Na, Ga-Na, Cu-In-Na, Cu-Ga-Na, In-Ga-Na, Na-Se, Cu-Se-Na, In-Se-Na, Ga-Se-Na, Cu-In-Se-Na, Cu-Ga-Se-Na, In-Ga-Se-Na, Cu-In-Ga-Se-Na, Na-S, Cu-S-Na, In-S-Na, Ga-S-Na, Cu-In-S-Na, Cu-Ga-S-Na, In-Ga-S-Na or Cu-In-Ga-S-Na.

98. the material of claim 1, it further comprises printing ink, and this printing ink comprises sodium compound with means organic balance ion or the sodium compound with inorganic counter ion counterionsl gegenions.

99. a method of using the material of claim 1, it is included in and heats nano flake in the non-oxygen chalcogen atmosphere to form dense film.

100. a method of using the material of claim 1, it comprises that further the material on the heated substrate forms the layer that contains the sodium material then to form film on this film.

101. a solar cell, it comprises:

Substrate;

The backplate that on described substrate, forms;

The p N-type semiconductor N film that on described backplate, forms;

Form so that constitute the n N-type semiconductor N film that pn ties with described p N-type semiconductor N film; And

The transparency electrode that on described n N-type semiconductor N film, forms;

Wherein said p N-type semiconductor N film is by handling and produce being made of the formed dense film of a plurality of nano flakes that contains at least a element from IB, IIIA and/or VIA family material, and wherein this dense film has about 26% or littler voidage.

102. the solar cell of claim 1, wherein dense film is void-free basically film.

103. the solar cell of claim 1, the mol ratio of IB family material in wherein said a plurality of nano flakes and IIIA family material is greater than about 1.0.

104. the solar cell of claim 1, wherein nano flake is the anaerobic nano flake.

105. the solar cell of claim 1, wherein nano flake is single metallic particles.

106. the solar cell of claim 1, wherein nano flake is the simple substance particle.

107. the solar cell of claim 1, wherein nano flake is an alloying pellet.

108. the solar cell of claim 1, wherein nano flake is the bianry alloy particle.

109. the solar cell of claim 1, wherein nano flake is the ternary alloy three-partalloy particle.

110. the solar cell of claim 1, wherein nano flake is the quaternary alloy particle.

111. the solar cell of claim 1, wherein nano flake is a solid solution pellet.

112. the solar cell of claim 1, wherein nano flake only comprises IIIA family material.

113. the solar cell of claim 1, wherein nano flake only comprises IB family and IIIA family material.

114. the solar cell of claim 1, wherein nano flake only comprises IB family and VIA family material.

115. the solar cell of claim 1, wherein nano flake only comprises IIIA family and VIA family material.

116. the solar cell of claim 1, wherein nano flake is selected from one of following: copper selenide, indium selenide or gallium selenide.

117. the solar cell of claim 1, a kind of standard deviation that wherein departs from the nano flake average thickness is less than 10nm.

118. the solar cell of claim 1, a kind of standard deviation that wherein departs from the nano flake average thickness is less than 5nm.

119. the solar cell of claim 1, wherein the metering of the element chemistry between the nano flake is than changing, as long as the total amount in the particle of all merging is in the stoichiometric proportion of expectation.

120. the solar cell of claim 1, wherein nano flake has at least about 10 or bigger aspect ratio.

121. the solar cell of claim 1, wherein nano flake has at least about 15 or bigger aspect ratio.

122. the solar cell of claim 1, wherein nano flake has random flat shape and/or random distribution of sizes.

123. the solar cell of claim 1, wherein nano flake has non-random flat shape and/or non-random distribution of sizes.

124. the solar cell of claim 1, wherein nano flake has the thickness less than about 20nm separately.

125. the solar cell of claim 1, wherein by the precursor layer with nano flake be heated to greater than about 375 ℃ but continued 1 minute or less time forms dense film less than the temperature of substrate fusion temperature.

126. the solar cell of claim 1 wherein is heated to annealing temperature by the precursor layer with nano flake and still forms dense film less than lasting 1 minute of substrate fusion temperature or less time.

127. the solar cell of claim 1 is wherein by using following at least a heat treatment technics to promote dense film to form: pulse heat treatment, laser beam or by the heating of IR lamp.

128. the solar cell of claim 1, wherein substrate is a flexible substrate.

129. the solar cell of claim 1, wherein substrate is a rigid substrate.

130. the solar cell of claim 1, wherein said film is formed by the precursor layer of nano flake and the layer that contains the sodium material that contacts with this precursor layer.

131. the solar cell of claim 1, wherein said film contact by the precursor layer of nano flake and with this precursor layer and also contain at least a following material the layer form: IB family element, IIIA family element, VIA family element, IA family element, the binary of any aforementioned elements and/or multicomponent alloy, the solid solution of any aforementioned elements, copper, indium, gallium, selenium, the copper indium, the copper gallium, the indium gallium, sodium, sodium compound, sodium fluoride, indium sulfide sodium, copper selenide, copper sulfide, indium selenide, indium sulfide, gallium selenide, the sulfuration gallium, copper indium diselenide, copper indium sulfide, gallium selenide copper, sulfuration gallium copper, the selenizing gallium indium, the sulfuration gallium indium, selenizing gallium indium copper, and/or sulfuration gallium indium copper.

132. the solar cell of claim 1, wherein nano flake contains sodium.

133. the solar cell of claim 1, wherein nano flake contains at least a in the following material: Cu-Na, In-Na, Ga-Na, Cu-In-Na, Cu-Ga-Na, In-Ga-Na, Na-Se, Cu-Se-Na, In-Se-Na, Ga-Se-Na, Cu-In-Se-Na, Cu-Ga-Se-Na, In-Ga-Se-Na, Cu-In-Ga-Se-Na, Na-S, Cu-S-Na, In-S-Na, Ga-S-Na, Cu-In-S-Na, Cu-Ga-S-Na, In-Ga-S-Na or Cu-In-Ga-S-Na.

134. the solar cell of claim 1, wherein said film is formed by the precursor layer of nano flake and the printing ink that comprises the sodium compound with means organic balance ion or have a sodium compound of inorganic counter ion counterionsl gegenions.

135. the solar cell of claim 1, wherein said film is formed by following: the precursor layer of nano flake and the layer that contains the sodium material that contacts with this precursor layer and/or nano flake that contains at least a following material: Cu-Na, In-Na, Ga-Na, Cu-In-Na, Cu-Ga-Na, In-Ga-Na, Na-Se, Cu-Se-Na, In-Se-Na, Ga-Se-Na, Cu-In-Se-Na, Cu-Ga-Se-Na, In-Ga-Se-Na, Cu-In-Ga-Se-Na, Na-S, Cu-S-Na, In-S-Na, Ga-S-Na, Cu-In-S-Na, Cu-Ga-S-Na, In-Ga-S-Na or Cu-In-Ga-S-Na; And/or comprise nano flake and have the sodium compound of means organic balance ion or have the printing ink of the sodium compound of inorganic counter ion counterionsl gegenions.