CN101409305A - Organic electroluminescence device and method for manufacturing the same - Google Patents
Organic electroluminescence device and method for manufacturing the same Download PDFInfo
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- CN101409305A CN101409305A CNA2008101737541A CN200810173754A CN101409305A CN 101409305 A CN101409305 A CN 101409305A CN A2008101737541 A CNA2008101737541 A CN A2008101737541A CN 200810173754 A CN200810173754 A CN 200810173754A CN 101409305 A CN101409305 A CN 101409305A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
- H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
- H10K50/171—Electron injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
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- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本发明公开一种有机电致发光设备及其制造方法，其中薄膜晶体管由发光器件的一个电极、遮蔽层或绝缘层覆盖，从而防止薄膜晶体管暴露于自然光或X射线。有机电致发光设备包括位于基板上的包括源区、沟道区和漏区的半导体层；位于基板上的包括第一接触孔的栅绝缘膜；位于栅绝缘膜的沟道区上方的栅极；位于栅绝缘膜上的包括第二接触孔的层间绝缘膜；位于层间绝缘膜上的通过第一和第二接触孔电连接到源区和漏区的源极和漏极；位于所得到的结构上的包括第三接触孔的平整膜；位于平整膜上的发光器件的第一电极，从而使第一电极覆盖半导体层同时使之经第三接触孔电连接到漏极；位于第一电极上的有机发光层；和位于有机发光层上的发光器件的第二电极。
The invention discloses an organic electroluminescent device and a manufacturing method thereof, wherein a thin film transistor is covered by an electrode, a shielding layer or an insulating layer of a light emitting device, thereby preventing the thin film transistor from being exposed to natural light or X-rays. The organic electroluminescent device includes a semiconductor layer including a source region, a channel region, and a drain region on a substrate; a gate insulating film including a first contact hole on the substrate; a gate electrode located above the channel region of the gate insulating film. an interlayer insulating film including a second contact hole on the gate insulating film; a source electrode and a drain electrode electrically connected to the source region and the drain region through the first and second contact holes on the interlayer insulating film; A planarized film comprising a third contact hole on the obtained structure; the first electrode of the light-emitting device positioned on the planarized film, so that the first electrode covers the semiconductor layer while making it electrically connected to the drain through the third contact hole; an organic light-emitting layer on the first electrode; and a second electrode of the light-emitting device on the organic light-emitting layer.
Description
Technical field
The present invention relates to a kind of organic electroluminescent device, relate in particular to a kind of organic electroluminescent device and manufacture method thereof, it can prevent that the thin-film transistor in the equipment that is included in is exposed to natural daylight or X ray.
Background technology
The application requires the priority of korean patent application No.10-2008-087897 that submits in the korean patent application No.10-2007-100972 that submitted on October 8th, 2007, the korean patent application No.10-2007-106588 of submission on October 23rd, 2007, on September 5th, 2008 and the korean patent application No.10-2008-087900 that submitted on September 5th, 2008, this sentences the mode of quoting as proof and incorporates its full content into, just as having carried out complete elaboration at this.
Along with the arriving of multimedia era, need develop a kind of can presenting more subtly and more approach the self-colored color bigger display device of size simultaneously.Yet current cathode ray tube (CRT) is being restricted aspect 40 inches of realizations or the larger sized large-screen.For this reason, develop organic electroluminescent device, LCD (LCD), Plasmia indicating panel (PDP) and projection TV (TV) rapidly, thus can be in the high quality graphic field with its application extension.
In organic electroluminescent device, when electric charge being injected in the organic membrane that is formed between negative electrode and the anode, emission bright dipping when bury in oblivion after paired combination in electronics and hole.Therefore, can on the flexible transparent substrate of for example making, be formed with organic el device by plastic material.And, for PDP or inorganic EL equipment, can drive organic electroluminescent device with low-voltage (about 10V or lower).In addition, organic electroluminescent device has the advantage that power consumption is relatively low and colour vision is superior.Therefore, organic electroluminescent device comes into one's own as display of future generation.For can be, remain organic membrane extremely thin and evenly be vital with the low voltage drive organic electroluminescent device.For example, the gross thickness of organic membrane should be about 100 to 200nm.In addition, equipment should have stability.
According to the sub-pixel driving method, organic electroluminescent device is divided into the passive matrix type and the active matrix type of utilizing thin-film transistor (TFT) driven element pixel of controlling the driven element pixel by the switch of the signal of telecommunication.
Conventional active matrix organic electroluminescence equipment below will be described.
Flatted membrane on the entire upper surface of the structure that conventional active matrix organic electroluminescence equipment comprises the TFT that is formed on the transparency carrier, be formed on the resulting TFT of comprising and be formed on luminescent device on the flatted membrane.
Each TFT comprises the active layer that limited by source region, drain region and channel region, at the gate insulating film that forms on the entire upper surface of the resulting structure that comprises active layer, at grid that being arranged on of gate insulating film forms on the part above the channel region and the interlayer dielectric that on the entire upper surface of the resulting structure that comprises grid, forms.TFT also comprises source electrode and drain electrode, and described source electrode and drain electrode are formed on the interlayer dielectric, is electrically connected to source region and drain region simultaneously respectively.
Luminescent device comprises the anode electrode that is formed in the drain electrode that is electrically connected to each TFT on the flatted membrane simultaneously; Be formed on the organic luminous layer on the anode electrode; With the cathode electrode that is formed on the organic luminous layer.
Organic luminous layer comprises hole transport layer, red (R), green (G) and blue (B) luminescent layer, and electron transfer layer.Hole transport layer comprises hole injection layer and hole transport (transport) layer.Electron transfer layer comprises electron transfer layer and electron injecting layer.
Yet the organic electroluminescent device of above-mentioned routine has following problem.
Fig. 1 is the figure that shows transistorized electrical characteristics difference in the organic electroluminescent device that exterior light causes.
As shown in Figure 1, comparing with (promptly close-ageing state in) aging situation in the state that exterior light is covered with organic electroluminescent device at light, in organic electroluminescent device is being exposed to the state of exterior light (be light open-ageing state in) when aging, this organic electroluminescent device shows the deterioration of electrical characteristics.That is to say, compare, when exterior light is radiated the active layer of TFT, with relevant deterioration in characteristics such as leakage currents with the situation that does not have exterior light to be radiated active layer.
In addition, when TFT is exposed to X ray in the deposition procedures of luminescent device (anode, organic luminous layer and negative electrode), may damage TFT.And may reduce and electrically contact degree between drain electrode and the anode.
Summary of the invention
Therefore, the present invention relates to a kind of organic electroluminescent device and manufacture method thereof, it can overcome one or more problems of bringing because of the limitation of correlation technique and shortcoming basically.
An object of the present invention is to provide a kind of active matrix organic electroluminescence equipment and manufacture method thereof; this equipment and method can protect the thin-film transistor in the equipment of being included in to avoid the influence of exterior light; and prevent that thin-film transistor is exposed to X ray in the luminescent device deposition procedures, and then prevent the deterioration in characteristics of thin-film transistor.
Attendant advantages of the present invention, purpose and feature will be described in the following description and become after those of ordinary skills have studied following description obviously, perhaps can understand by practice of the present invention.Can realize and obtain purpose of the present invention and other advantages by the structure that particularly points out in written specification and claim and the accompanying drawing.
In order to realize these and other advantage, according to purpose of the present invention, as the description of concrete and broad sense, a kind of organic electroluminescent device comprises: substrate; Be positioned at the semiconductor layer on the described substrate, described semiconductor layer comprises source region, channel region and drain region; Be positioned at the gate insulating film on the described substrate that comprises described semiconductor layer, described gate insulating film comprises first contact hole that is separately positioned on described source region and the drain region; Be positioned at the grid on the part of described channel region top of described gate insulating film; Be positioned at the interlayer dielectric on the entire upper surface that comprises described grid of described gate insulating film, described interlayer dielectric comprises second contact hole that is separately positioned on described source region and the drain region; Source electrode and drain electrode, described source electrode and described drain electrode are positioned on the described interlayer dielectric, thereby make described source electrode and described drain electrode be electrically connected to described source region and described drain region respectively by described first contact hole and described second contact hole; Be positioned at the flatted membrane on the entire upper surface of the resulting structure that comprises described source electrode and described drain electrode, described flatted membrane comprises the 3rd contact hole that is arranged in the described drain electrode; First electrode of luminescent device, first electrode of described luminescent device is positioned on the described flatted membrane, makes described first electrode cover described semiconductor layer, makes described first electrode be electrically connected to described drain electrode by described the 3rd contact hole simultaneously; Be positioned at the organic luminous layer on described first electrode; And second electrode of described luminescent device, it is positioned on the described organic luminous layer.
In another aspect of the present invention, a kind of organic electroluminescent device comprises: transparency carrier; Be positioned at the semiconductor layer on the described substrate, described semiconductor layer comprises source region, channel region and drain region; Be positioned at the gate insulating film on the described substrate that comprises described semiconductor layer, described gate insulating film comprises first contact hole that is separately positioned on described source region and the described drain region; Be positioned at the grid on the part of described channel region top of described gate insulating film; Be positioned at the interlayer dielectric on the entire upper surface that comprises described grid of described gate insulating film, described interlayer dielectric comprises second contact hole that is separately positioned on described source region and the described drain region; Source electrode and drain electrode, described source electrode and described drain electrode are positioned on the described interlayer dielectric, thereby make described source electrode and described drain electrode be electrically connected to described source region and described drain region respectively by described first contact hole and described second contact hole; Be positioned at the flatted membrane on the entire upper surface of the resulting structure that comprises described source electrode and drain electrode, described flatted membrane comprises the 3rd contact hole that is arranged in the described drain electrode; First electrode of luminescent device, first electrode of described luminescent device is positioned on the described flatted membrane, makes described first electrode be electrically connected to described drain electrode by described the 3rd contact hole; Shielding layer, described shielding layer be positioned at the top of described first electrode or below, make described shielding layer cover described semiconductor layer; Be positioned at the organic luminous layer on described first electrode; And second electrode of described luminescent device, it is positioned on the described organic luminous layer.
Of the present invention aspect another, a kind of organic electroluminescent device comprises a plurality of unit, the non-display area that in described a plurality of unit each includes the viewing area that is provided with the first transistor and luminescent device and is provided with the transistor seconds that is used to drive described unit, wherein said luminescent device comprises first electrode, luminescent layer and second electrode; And described first electrode covers described the first transistor and described transistor seconds.
Of the present invention aspect another, a kind of organic electroluminescent device, this organic electroluminescent device comprises: be positioned at the thin-film transistor on the transparency carrier, described thin-film transistor comprises grid, source electrode and drain electrode; First electrode of luminescent device, it is formed and is electrically connected to described drain electrode; Be formed the dielectric film that covers described thin-film transistor and overlap with the opposed end of described first electrode; Be positioned at the luminescent layer on described first electrode, when burying in oblivion after the paired combination of electronics and hole, described luminescent layer sends light; And second electrode of described luminescent device, it is positioned on the described luminescent layer.
In another aspect of the present invention, a kind of manufacture method of organic electroluminescent device may further comprise the steps: form semiconductor layer on substrate, described semiconductor layer comprises source region, channel region and drain region; Form gate insulating film comprising on the described substrate of described semiconductor layer; On the part above the described channel region of described gate insulating film, form grid; On the entire upper surface that comprises described grid of described gate insulating film, form interlayer dielectric; Optionally remove described gate insulating film and described interlayer dielectric, thereby form first contact hole that is separately positioned on described source region and the described drain region; On described interlayer dielectric, form source electrode and drain electrode, thereby make described source electrode and described drain electrode be electrically connected to described source region and described drain region respectively by described first contact hole; On the entire upper surface of the resulting structure that comprises described source electrode and described drain electrode, form flatted membrane; Optionally remove described flatted membrane, thereby in described drain electrode, form second contact hole; On described flatted membrane, form first electrode of luminescent device, thereby make described first electrode cover described semiconductor layer, make described first electrode be electrically connected to described drain electrode simultaneously by described second contact hole; On described first electrode, form organic luminous layer; And second electrode that on described organic luminous layer, forms described luminescent device.
Aspect another, a kind of manufacture method of organic electroluminescent device may further comprise the steps: form semiconductor layer on transparency carrier, described semiconductor layer comprises source region, channel region and drain region of the present invention; Form gate insulating film comprising on the described substrate of described semiconductor layer; On the part above the described channel region of described gate insulating film, form grid; On the entire upper surface that comprises described grid of described gate insulating film, form interlayer dielectric; Optionally remove described gate insulating film and described interlayer dielectric, thereby form first contact hole that is separately positioned on described source region and the described drain region; On described interlayer dielectric, form source electrode and drain electrode, thereby make described source electrode and described drain electrode be electrically connected to described source region and described drain region respectively by described first contact hole; On the entire upper surface of the resulting structure that comprises described source electrode and drain electrode, form flatted membrane; Optionally remove described flatted membrane, thereby form second contact hole that is arranged in the described drain electrode; On described flatted membrane, form first electrode of luminescent device, thereby make described first electrode be electrically connected to described drain electrode by described second contact hole; On described first electrode or below the formation shielding layer, thereby make described shielding layer cover described semiconductor layer; On described first electrode, form organic luminous layer; And second electrode that on described organic luminous layer, forms described luminescent device.
Aspect another, a kind of manufacture method of organic electroluminescent device may further comprise the steps: form thin-film transistor on transparency carrier, described thin-film transistor comprises grid, source electrode and drain electrode of the present invention; On the entire upper surface of the described substrate that comprises described thin-film transistor, form flatted membrane, and form and to pass the contact hole of described flatted membrane, thereby described drain electrode is exposed by described contact hole; Form first electrode of luminescent device, thereby make described first electrode be electrically connected to described drain electrode by described contact hole; On described flatted membrane, form dielectric film, thereby make described dielectric film cover described thin-film transistor and overlap with the opposed end of described first electrode; And second electrode that on described first electrode, forms described luminescent device.
Has following effect according to organic electroluminescent device of the present invention and manufacture method thereof.
At first, can the protective film transistor avoid the X ray that produced during the deposition procedures that is used for luminescent layer in the organic electroluminescent device manufacturing.
Secondly, be under the situation of active matrix type at organic electroluminescent device, can keep the desired electrical characteristics of thin-film transistor at natural daylight.
Be to be understood that above-mentioned general description and following detailed are exemplary and explanat, and aim to provide the of the present invention further explanation that limits as claim.
Description of drawings
Accompanying drawing is included in this specification providing further understanding of the present invention, and is attached in this specification and constitutes the part of this specification, and accompanying drawing shows embodiments of the present invention, and is used from specification one and explains principle of the present invention.In the accompanying drawing:
Fig. 1 is the figure that shows the transistorized electrical characteristics difference in the organic electroluminescent device that exterior light causes;
Fig. 2 shows the schematic diagram that is arranged on according to transistor in the non-luminous region of organic electroluminescent device of the present invention and first electrode (anode);
Fig. 3 is the sectional view that shows according to the organic electroluminescent device of first embodiment of the invention;
Fig. 4 is the sectional view that shows according to the organic electroluminescent device of second embodiment of the invention;
Fig. 5 A to Fig. 5 E is the sectional view that shows according to the order operation of the manufacture method of the organic electroluminescent device of first embodiment of the invention;
Fig. 6 is the sectional view that shows according to the organic electroluminescent device of third embodiment of the invention;
Fig. 7 is the sectional view that shows according to anode in the organic electroluminescent device of third embodiment of the invention and insulating barrier; And
Fig. 8 A to Fig. 8 F is the sectional view that shows according to the order operation of the manufacture method of the organic electroluminescent device of the 3rd execution mode of the present invention.
Embodiment
Below detailed description is included the preferred implementation of the present invention of organic el device and manufacture method thereof, example has gone out its example in the accompanying drawings.
Fig. 2 shows the schematic diagram that is arranged on according to transistor in the non-luminous region of organic electroluminescent device of the present invention and first electrode (anode).
As shown in Figure 2, organic electroluminescent device has the feature of the first electrode covering transistor Tr '.The transistor that can be thin-film transistor comprises source region, drain region and channel region.
Fig. 3 is the sectional view that shows according to the organic electroluminescent device of first embodiment of the invention.Below with reference to the organic electroluminescent device of Fig. 3 description according to shown execution mode.
Organic electroluminescent device according to first embodiment of the invention is the active matrix type, and comprises substrate 100.Organic electroluminescent device also comprises a plurality of thin-film transistors (TFT) 110, flatted membrane 140 and the luminescent device that comprises parts 150,160,165,170,180,185 and 190, and all these parts all stack gradually on substrate 100.
Each TFT110 is by following structure.
That is to say that each TFT 110 comprises and is formed on the substrate 100 active layer that is limited by source region 111, drain region 112 and channel region 113 simultaneously; The gate insulating film 120 that on the entire upper surface of the resulting structure that comprises active layer, forms; The grid 114 that forms on the part above the channel region 113 that is arranged at gate insulating film 120; With the interlayer dielectric 130 that on the entire upper surface of the resulting structure that comprises grid 114, forms.Each TFT110 also comprises source electrode 115 and drain electrode 116, described source electrode 115 and drain electrode 116 are formed on the interlayer dielectric 130, extend through the contact hole that passes gate insulating film 120 and interlayer dielectric 130 respectively and form simultaneously, thereby make source electrode 115 and drain electrode 116 be electrically connected to source region 111 and drain region 112 respectively.
In source electrode 115 and the drain electrode 116 each is made by the material that is selected from the group that following material constitutes: chromium (Cr), copper (Cu), gold (Au), nickel (Ni), silver (Ag), tantalum (Ta), aluminium (Al) and aluminium-neodymium (AlNd), and source electrode 115 and in 116 each of draining have 200 to 500nm thickness.
Pass the part that is arranged on the flatted membrane 140 of drain electrode on 116 and form contact hole, so that first electrode 150 of luminescent device (will after a while to its description) is electrically connected to drain electrode 116.
Will be formed on the flatted membrane 140 by first electrode 150 that contact hole is electrically connected to drain electrode 116 luminescent device.First electrode 150 is made of the metal level with single layer structure or sandwich construction, protects TFT 110 to avoid the influence of X ray with shield light and in the process that forms the luminescent layer and second electrode.First electrode 150 can be planted materials and makes to have single layer structure or sandwich construction by being selected from the group that following material constitutes one or more: titanium (Ti), molybdenum (Mo), chromium (Cr), copper (Cu), gold (Au), nickel (Ni), silver (Ag), tantalum (Ta), aluminium (Al), aluminium-neodymium (AlNd) and tungsten (W).Preferably, determine the thickness and the material of first electrode 150, thereby make first electrode 150 not only can cover natural daylight, and can have 0.001% to 1.0% X ray transmissivity.
Therefore, first electrode 150 extends to the top of each TFT110, to cover TFT 110 (active layer of TFT 110 specifically).The material of first electrode 150 also covers the TFT that is arranged in the non-luminous region (not shown) (drive part).
Because first electrode 150 covers TFT, be exposed to natural daylight or X ray so can prevent TFT, can prevent the TFT deterioration in characteristics thus.
Organic luminous layer and second electrode 190 order are formed on the upper surface of the resulting structure that comprises the pixel isolation film 155 and first electrode 150.
Organic luminous layer comprises hole injection layer 160, hole transport layer 165, emission layer 170, electron transfer layer 180 and electron injecting layer 185, and these parts stack gradually in this order.Second electrode 190 of organic electroluminescent device is layered on the organic luminous layer.
The lamination order of organic luminous layer can be opposite.That is to say that electron injecting layer, electron transfer layer, emission layer, hole transport layer and hole injection layer can stack gradually in this order on first electrode 150.In this case, second electrode 190 is layered on the hole injection layer.
Fig. 4 is the sectional view that shows according to the organic electroluminescent device of second embodiment of the invention.
Be according to the organic electroluminescent device of second embodiment of the invention and the difference of the organic electroluminescent device in first execution mode, first electrode is made of transparency conducting layer, second electrode is made of metal level, and on first electrode or below form shielding layer 200 extraly to cover TFT, cover natural daylight or X ray thus.Identical according to all the other structures of the organic electroluminescent device of second embodiment of the invention with structure in first execution mode shown in Figure 3, therefore will no longer provide its detailed description.
According to second execution mode, TFT110 (as mentioned above, each TFT110 comprises active layer, grid 114, source electrode 115 and drains 116) is formed on the transparency carrier of being made by for example glass, quartz or sapphire 100.Flatted membrane 140 is formed on the entire upper surface of the transparency carrier 100 that comprises TFT110 with the pixel region leveling.
Pass the part that is arranged on the flatted membrane 140 of drain electrode on 116 and form contact hole, so that first electrode 150 of luminescent device (will after a while to its description) is electrically connected to drain electrode 116.
Will be formed on the flatted membrane 140 by first electrode 150 that contact hole is electrically connected to the luminescent device of drain electrode on 116.Shielding layer 200 is formed on the top or following to cover TFT 110 of first electrode 150.
Therefore, shielding layer 200 extends to the top of each TFT110 to cover TFT 110 (active layer of TFT 110 specifically).The material of shielding layer 200 also can cover the TFT that is arranged in the non-luminous region (figure does not show) (drive part).
Because shielding layer 200 covers TFT, be exposed to natural daylight or X ray so can prevent TFT, and therefore can prevent the TFT deterioration in characteristics.
Organic luminous layer and second electrode, 190 orders are formed on first electrode 150.
Manufacture method according to the organic electroluminescent device of first embodiment of the invention below will be described.
Fig. 5 A to Fig. 5 E is the sectional view that shows according to the order operation of the manufacture method of the organic electroluminescent device of first embodiment of the invention.
Shown in Fig. 5 A, at first prepare the transparency carrier of making by glass, quartz or sapphire 100.Utilize Low Pressure Chemical Vapor Deposition or plasma reinforced chemical vapour deposition method then, on transparency carrier 100, form thickness and be about
Extremely
Amorphous silicon film.Utilize laser annealing method etc. to make the amorphous silicon film crystallization be polysilicon film then.Certainly, directly the deposit spathic silicon film to replace amorphous silicon film.
Afterwards, according to photo-mask process to the polysilicon film composition in each unit pixel, to form the active layer 113a of TFT110.Deposition gate insulating film 120 on the entire upper surface of the resulting structure that comprises active layer 113a then.
Shown in Fig. 5 B, form grid 114 being arranged on the part above the active layer 113a of gate insulating film 120 subsequently.Specifically, be about by deposit thickness on gate insulating film 120
Extremely
Aluminium-neodymium (AlNd), and utilize photo-mask process to aluminium-neodymium (AlNd) composition of being deposited and form grid 114 subsequently.
By grid 114 is used as mask, foreign ion is implanted in the active layer 113a.Activate the foreign ion injected then to form source region 111 and the drain region 112 of TFT 110.In this case, foreign ion is not implanted in the part of the active layer 113 that is arranged on grid 114 belows.As a result, be formed naturally channel region 113.
Afterwards, cvd silicon oxide film or silicon nitride film on the entire upper surface of the resulting structure that comprises grid 114 are to form interlayer dielectric 130.
Shown in Fig. 5 C, optionally remove gate insulating film 120 and interlayer dielectric 130, thereby expose source region 111 and drain region 112, form contact hole thus.
At least one metal level of deposition on interlayer dielectric 130.Optionally remove metal level then, to form source electrode 115 and the drain electrode 116 that is electrically connected to source region 111 and drain region 112 respectively.
Then, shown in Fig. 5 D, on the entire upper surface of the interlayer dielectric 130 that comprises TFT 110, form flatted membrane 140.Flatted membrane 140 is used for subsequently with the first electrode leveling of the luminescent device that forms.By the organic or inorganic insulator film deposition is pact
Extremely
Thickness form flatted membrane 140.
Afterwards, utilize photo-mask process etching flatted membrane 140 forming contact hole, in source electrode 115 and the drain electrode 116 one by this contact hole expose (shown in situation in, drain electrode 116 is exposed by contact hole).
Subsequently, on flatted membrane 140, form first electrode 150, thereby make this first electrode 150 cover TFT110, be electrically connected to drain electrode 116 by contact hole simultaneously.
Below will describe the process that forms first electrode 150 in detail.
Utilization is selected from one or more the kind materials in the following material and deposits single material layer or at least two material layers: titanium (Ti), molybdenum (Mo), chromium (Cr), copper (Cu), gold (Au), nickel (Ni), silver (Ag), tantalum (Ta), aluminium (Al), aluminium-neodymium (AlNd) and tungsten (W).Utilize photo-mask process optionally to remove single or multiple material layers then, form first electrode 150 thus.
Thickness and material to first electrode 150 are controlled, thereby make first electrode 150 not only can cover natural daylight, and can have 0.001% to 1.0% X ray transmissivity.
Afterwards, deposit thickness is about on the entire upper surface of resulting structure
Extremely
The inorganic insulating membrane that constitutes by silicon nitride film or silicon oxide film.Then to the inorganic insulating membrane composition so that its only be retained between the adjacent cells pixel region, thereby form pixel isolation film 155.
Then, shown in Fig. 5 E, sequential cascade hole injection layer 160, hole transport layer 165, emission layer 170, electron transfer layer 180 and electron injecting layer 185 form organic luminous layer thus on the entire upper surface of the resulting structure that comprises first electrode 150.Afterwards, on the entire upper surface of resulting structure, form second electrode 190 of the organic electroluminescent device of expectation thickness.
By deposit thickness is that 10 to 30nm CuPc (CuPC) forms hole injection layer 160.By deposit thickness be 4,4 '-two [N-(1-naphthyl)-N-phenyl amino]-biphenyl of 30 to 60nm (4.4 '-bis[N-(1-naphthyl)-N-phenthylamino]-biphenyl, NPB) form hole transport layer 165.The luminous organic material that utilization is selected according to the red, green and blue pixel forms emission layer 170, and as needs and can add dopant to emission layer 170.
Utilize electron beam (being X ray) carry out to form at least one deposition procedures in the deposition procedures of the organic luminous layer and second electrode.
When utilize X ray form organic luminous layer and second electrode the two time, can in same chamber, carry out its deposition procedures, can strengthen the characteristics of luminescence of organic luminous layer thus.That is to say, after the structure that has deposited organic luminous layer on it is provided in the sputtering equipment, when utilizing sputtering method on this structure, to deposit second electrode, because organic luminous layer is exposed in the atmosphere, so degradation of light emission characteristics may take place.And in the later case, deposition procedures has certain complexity.
Although in two operations that form the organic luminous layer and second electrode, all used electron beam, can prevent that also the active layer of TFT110 from being damaged by X ray, because the active layer of TFT is covered by first electrode 150.
Meanwhile, above formation does not extend to TFT,, can protect TFT to avoid the influence of natural daylight or X ray with first electrode 150 of covering TFT or not forming under the situation of shielding layer 200 (as in first and second execution modes) on the TFT.To this point be described in conjunction with organic electroluminescent device according to third embodiment of the invention.
As shown in Figure 6 and Figure 7, organic electroluminescent device according to third embodiment of the invention has a kind of like this structure, and wherein a plurality of TFT 110, flatted membrane 140 and the luminescent device sequential cascade that comprises parts 150,160,165,170,180,185 and 190 are on transparency carrier 100.
Each TFT 110 comprises and is formed on the transparency carrier 100 active layer that is limited by source region 111, drain region 112 and channel region 113 simultaneously; The gate insulating film 120 that on the entire upper surface of the resulting structure that comprises active layer, forms; The grid 114 that on the part above the channel region 113 that is arranged on gate insulating film 120, forms; With the interlayer dielectric 130 that on the entire upper surface of the resulting structure that comprises grid 114, forms.Each TFT110 also comprises source electrode 115 and drain electrode 116, described source electrode 115 and drain electrode 116 are formed on the interlayer dielectric 130, extend through simultaneously and be formed the contact hole that arrives source region 111 and drain region 112 respectively, thereby make source electrode 115 and drain electrode 116 be electrically connected to source region 111 and drain region 112 respectively.
Luminescent device comprises first electrode 150 (anode electrode) that is formed on the flatted membrane 140, thereby makes it be electrically connected to drain electrode 116 by contact hole, and this contact hole passes flatted membrane 140 and forms to expose drain electrode 116.Luminescent device also is included in the dielectric film 158 that forms on the part that is arranged on each TFT 110 tops of flatted membrane 140; Organic luminous layer that form, that comprise parts 160,165,170,180 and 185 on the entire upper surface of the resulting structure that comprises first electrode 150 and dielectric film 158; With second electrode 190 (negative electrode) that is formed on the organic luminous layer.
The part that covers the end of first electrode 150 in the dielectric film 158 has 3% to 10% corresponding width with first electrode, 150 width.That is to say to have 80% to 95% depth-width ratio though dielectric film 158 covers first electrode, 150, the first electrodes 150.The overlapping width of the size of first electrode 150 and dielectric film 158 depends on the Pixel Dimensions of organic electroluminescent device.For example, when supposition first electrode 150 was of a size of 100 μ m, the width that dielectric film 158 covers each end of first electrode 150 was 3 to 10 μ m.Dielectric film 160 can be by for example silicon nitride (SiN
x) or silica (SiO
2) inorganic insulating material make.
If the width that dielectric film 158 covers first electrode 150 then can reduce the aperture ratio of organic electroluminescent device greatly greater than above-mentioned value.On the other hand, if the width that dielectric film 158 covers first electrode 150 is then such as will be described later greater than above-mentioned value, has difficulty in the manufacture process.
Organic luminous layer comprises hole injection layer 160, hole transport layer 165, emission layer 170, electron transfer layer 180 and electron injecting layer 185, and all these parts stack gradually in this order.
Because insulating barrier 158 covers the end of first electrode 150 with desired width in above-mentioned organic electroluminescent device, so prevented to be transmitted to TFT from the light that emission layer sends at the organic electroluminescent device duration of work.Can in the process that forms emission layer and negative electrode, protect TFT to avoid the ultraviolet influence that is produced.Therefore can prevent the performance degradation of TFT.
Below description is had the manufacture method of the organic electroluminescent device of said structure.
Fig. 8 A to Fig. 8 F is the sectional view of order operation that shows the manufacture method of organic electroluminescent device.
Shown in Fig. 8 A, utilize Low Pressure Chemical Vapor Deposition or plasma reinforced chemical vapour deposition method on the transparency carrier of making by glass, quartz or sapphire 100, to form thickness and be about
Extremely
Amorphous silicon film.Utilize laser annealing method etc. to make the amorphous silicon film crystallization be polysilicon film then.Certainly, directly the deposit spathic silicon film to replace amorphous silicon film.
Afterwards, utilize photoetching process optionally to remove polysilicon film, to form the active layer 113a of each TFT.
Then, deposition gate insulating film 120 on the entire upper surface of the resulting structure that comprises active layer 113a.
Shown in Fig. 8 B, deposit thickness is about on the entire upper surface of resulting structure
Extremely
Aluminium-neodymium (AlNd).Optionally remove the aluminium-neodymium (AlNd) deposited, to form grid 114 being arranged on the part above the active layer 113a of gate insulating film 120.
By grid 114 is used as mask, foreign ion is implanted in the active layer 113a.Activate the foreign ion that is injected then.The foreign ion that injects in order to activate recovers silicon layer from possible damage simultaneously, carries out laser annealing operation or electric furnace annealing operation (furnace annealingprocess).As a result, in the active layer 113a of the relative both sides of grid 114, form source region 111 and drain region 112.In this case, form channel region 113 in the active layer 113a between source region 111 and drain region 112 naturally.
Afterwards, on the entire upper surface of resulting structure, form interlayer dielectric 130.
Shown in Fig. 8 C, optionally remove gate insulating film 120 and interlayer dielectric 130, so that expose in source region 111 and drain region 112, form contact hole thus.
Utilize molybdenum-tungsten (MoW) or aluminium-neodymium (AlNd) deposit thickness on interlayer dielectric 130 be 3,000 to
Conductive layer, utilize then photo-mask process to this conductive layer composition on interlayer dielectric 130, forming source electrode 115 and drain electrode 116, thereby make source electrode 115 and drain electrode 116 be electrically connected to source region 111 and drain region 112 respectively.
Can utilize sputtering method or the sedimentation of having used electron beam to form source electrode 115 and drain electrode 116.Perhaps, the electric conducting material of for example aluminium (Al) can be deposited as 200 to 500nm thickness, to form source electrode 115 and drain electrode 116.
Then, shown in Fig. 8 D, on the entire upper surface of the interlayer dielectric 130 that comprises source electrode 115 and drain electrode 116, form flatted membrane 140.Flatted membrane 140 is used for subsequently with the luminescent device leveling that forms.By with the organic or inorganic insulator film deposition be about 1,000 to
Thickness and form flatted membrane 140.
Afterwards, optionally etching flatted membrane 140 is forming contact hole to utilize photo-mask process, and drain electrode 116 is exposed by this contact hole.Utilize ITO or IZO deposition of transparent conductive film on flatted membrane 140, then according to photo-mask process to the nesa coating composition, form first electrode 150 of luminescent device thus, thus make first electrode 150 by contact hole be electrically connected to the drain electrode 116.
Afterwards, shown in Fig. 8 E, on the entire upper surface of the resulting structure that comprises first electrode 150 deposit thickness be about 1,000 to
For example silicon nitride or the insulating material 153 of silica.Then to insulating material 153 compositions that deposited to form dielectric film 158.By selectivity exposure and developing procedure and to insulating material 153 compositions.
That is to say, shown in Fig. 8 E, deposition photoresist film 157 on insulating material 153.Under the condition that mask 156 is arranged on the photoresist film 157, make photoresist film 157 experience selectivity exposures, form the pattern of photoresist film 157 thus.Mask 156 has and is used for pattern that the zone between the end sections of the first adjacent electrode 150 and each first electrode 150 is exposed.
By being used as mask, optionally remove insulating material 153 to form dielectric film 158 through the photoresist film 157 of composition.
Have in the situation of 100 μ m live widths at first electrode 150, the width that mask 156 exposes each end of first electrode (anode) 150 is 3 to 10 μ m.If the width that mask 156 exposes each end of first electrode 150 then may be owing to the error in the exposure process causes dielectric film 158 compositions and this dielectric film 158 are not covered first electrode 150 less than 3 μ m.
The dielectric film 158 that forms according to the etching work procedure that uses mask 156 covers the width of end of first electrode 150 corresponding to 3% to 10% of first electrode, 150 width.That is to say that first electrode 150 has 80% to 95% depth-width ratio.The overlapping width of the size of first electrode 150 and dielectric film 158 depends on the Pixel Dimensions of organic electroluminescent device.For example, when supposition first electrode 150 was of a size of 100 μ m, the width that dielectric film 158 covers each end of first electrode 150 was 3 to 10 μ m.
Afterwards, shown in Fig. 8 F, remove photoresist film 157.Sequential cascade hole injection layer 160, hole transport layer 165, emission layer 170, electron transfer layer 180 and electron injecting layer 185 on resulting structure form organic luminous layer thus then.Subsequently, on the entire upper surface of resulting structure, form second electrode (negative electrode) 190 of the organic electroluminescent device of expectation thickness.
By deposit thickness is that 10 to 30nm CuPc (CuPC) forms hole injection layer 160.By deposit thickness is that 30 to 60nm phenyl benzidine (NPB) forms hole transport layer 165.The luminous organic material that utilization is selected according to the red, green and blue pixel forms emission layer 170, and can add dopant to this emission layer 170 if desired.
Though substrate may be exposed to ultraviolet ray in the process that forms organic luminous layer and second electrode (negative electrode) 190, but dielectric film 158 covers organic luminous layer and second electrode (negative electrode) 190 is avoided ultraviolet influence, because dielectric film 158 is formed between the first adjacent electrode 150, cover the part of the opposed end of each first electrode 150 simultaneously.Therefore, the performance degradation of each TFT can be prevented, and the light that sends from emission layer can be covered.
To those skilled in the art clearly, under the condition that does not depart from the spirit or scope of the present invention, can make various modifications and variations in the present invention.Thereby the present invention is intended to contain these modifications of the present invention and modification, as long as they fall in the scope of claims and equivalent thereof.
Can in the product of finishing and in manufacture process, keep the TFT characteristic according to organic electroluminescent device of the present invention and manufacture method thereof.Therefore, can strengthen the performance of organic electroluminescent device and prolong its useful life.
Claims (25)
1, a kind of organic electroluminescent device, this organic electroluminescent device comprises:
Substrate;
Be positioned at the semiconductor layer on the described substrate, described semiconductor layer comprises source region, channel region and drain region;
Be positioned at the gate insulating film on the described substrate that comprises described semiconductor layer, described gate insulating film comprises first contact hole that is separately positioned on described source region and the drain region;
Be positioned at the grid on the part of described channel region top of described gate insulating film;
Be positioned at the interlayer dielectric on the entire upper surface that comprises described grid of described gate insulating film, described interlayer dielectric comprises second contact hole that is separately positioned on described source region and the drain region;
Source electrode and drain electrode, described source electrode and described drain electrode are positioned on the described interlayer dielectric, make described source electrode and described drain electrode be electrically connected to described source region and described drain region respectively by described first contact hole and described second contact hole;
Be positioned at the flatted membrane on the entire upper surface of the resulting structure that comprises described source electrode and described drain electrode, described flatted membrane comprises the 3rd contact hole that is arranged in the described drain electrode;
First electrode of luminescent device, first electrode of described luminescent device is positioned on the described flatted membrane, makes described first electrode cover described semiconductor layer, makes described first electrode be electrically connected to described drain electrode by described the 3rd contact hole simultaneously;
Be positioned at the organic luminous layer on described first electrode; And
Second electrode of described luminescent device, it is positioned on the described organic luminous layer.
2, organic electroluminescent device according to claim 1, wherein said first electrode is planted materials and is made to have single layer structure or sandwich construction by being selected from the group that following material constitutes one or more: titanium, molybdenum, chromium, copper, gold, nickel, silver, tantalum, aluminium, aluminium-neodymium and tungsten.
3, organic electroluminescent device according to claim 1, wherein said first electrode has 0.001% to 1.0% X ray transmissivity.
4, a kind of organic electroluminescent device, this organic electroluminescent device comprises:
Transparency carrier;
Be positioned at the semiconductor layer on the described substrate, described semiconductor layer comprises source region, channel region and drain region;
Be positioned at the gate insulating film on the described substrate that comprises described semiconductor layer, described gate insulating film comprises first contact hole that is separately positioned on described source region and the described drain region;
Be positioned at the grid on the part of described channel region top of described gate insulating film;
Be positioned at the interlayer dielectric on the entire upper surface that comprises described grid of described gate insulating film, described interlayer dielectric comprises second contact hole that is separately positioned on described source region and the described drain region;
Source electrode and drain electrode, described source electrode and described drain electrode are positioned on the described interlayer dielectric, make described source electrode and described drain electrode be electrically connected to described source region and described drain region respectively by described first contact hole and described second contact hole;
Be positioned at the flatted membrane on the entire upper surface of the resulting structure that comprises described source electrode and drain electrode, described flatted membrane comprises the 3rd contact hole that is arranged in the described drain electrode;
First electrode of luminescent device, first electrode of described luminescent device is positioned on the described flatted membrane, makes described first electrode be electrically connected to described drain electrode by described the 3rd contact hole;
Shielding layer, described shielding layer be positioned at the top of described first electrode or below, make described shielding layer cover described semiconductor layer;
Be positioned at the organic luminous layer on described first electrode; And
Second electrode of described luminescent device, it is positioned on the described organic luminous layer.
5, organic electroluminescent device according to claim 4, wherein said shielding layer is planted materials and is made to have single layer structure or sandwich construction by being selected from the group that following material constitutes one or more: titanium, molybdenum, chromium, copper, gold, nickel, silver, tantalum, aluminium, aluminium-neodymium and tungsten.
6, organic electroluminescent device according to claim 4, wherein said shielding layer have 0.001% to 1.0% X ray transmissivity.
7, organic electroluminescent device according to claim 4, wherein said first electrode is made by tin indium oxide or indium zinc oxide.
8, a kind of organic electroluminescent device, this organic electroluminescent device comprises a plurality of unit, the non-display area that in described a plurality of unit each includes the viewing area that is provided with the first transistor and luminescent device and is provided with the transistor seconds that is used to drive described unit
Wherein said luminescent device comprises first electrode, luminescent layer and second electrode; And
Described first electrode covers described the first transistor and described transistor seconds.
9, organic electroluminescent device according to claim 8, wherein said first electrode is planted materials and is made to have single layer structure or sandwich construction by being selected from the group that following material constitutes one or more: titanium, molybdenum, chromium, copper, gold, nickel, silver, tantalum, aluminium, aluminium-neodymium and tungsten.
10, organic electroluminescent device according to claim 8, wherein said first electrode has 0.001% to 1.0% X ray transmissivity.
11, a kind of organic electroluminescent device, this organic electroluminescent device comprises:
Be positioned at the thin-film transistor on the transparency carrier, described thin-film transistor comprises grid, source electrode and drain electrode;
First electrode of luminescent device, it is formed and is electrically connected to described drain electrode;
Be formed the dielectric film that covers described thin-film transistor and overlap with the opposed end of described first electrode;
Be positioned at the luminescent layer on described first electrode, when burying in oblivion after the paired combination of electronics and hole, described luminescent layer sends light; And
Second electrode of described luminescent device, it is positioned on the described luminescent layer.
12, organic electroluminescent device according to claim 11, the part that covers the described opposed end of described first electrode in the wherein said dielectric film have 3% to 10% corresponding width with the width of described first electrode.
13, organic electroluminescent device according to claim 11, wherein said dielectric film covers the opposed end of described first electrode, makes described first electrode have 80% to 95% depth-width ratio.
14, organic electroluminescent device according to claim 11, wherein said dielectric film is by SiN
xOr SiO
2Make.
15, a kind of manufacture method of organic electroluminescent device, this manufacture method may further comprise the steps:
Form semiconductor layer on substrate, described semiconductor layer comprises source region, channel region and drain region;
Form gate insulating film comprising on the described substrate of described semiconductor layer;
On the part above the described channel region of described gate insulating film, form grid;
On the entire upper surface that comprises described grid of described gate insulating film, form interlayer dielectric;
Optionally remove described gate insulating film and described interlayer dielectric, thereby form first contact hole that is separately positioned on described source region and the described drain region;
On described interlayer dielectric, form source electrode and drain electrode, make described source electrode and described drain electrode be electrically connected to described source region and described drain region respectively by described first contact hole;
On the entire upper surface of the resulting structure that comprises described source electrode and described drain electrode, form flatted membrane;
Optionally remove described flatted membrane, thereby in described drain electrode, form second contact hole;
On described flatted membrane, form first electrode of luminescent device, make described first electrode cover described semiconductor layer, make described first electrode be electrically connected to described drain electrode simultaneously by described second contact hole;
On described first electrode, form organic luminous layer; And
On described organic luminous layer, form second electrode of described luminescent device.
16, manufacture method according to claim 15, wherein said first electrode is planted materials and is made to have single layer structure or sandwich construction by being selected from the group that following material constitutes one or more: titanium, molybdenum, chromium, copper, gold, nickel, silver, tantalum, aluminium, aluminium-neodymium and tungsten.
17, manufacture method according to claim 15 is wherein controlled the material of described first electrode and the thickness of described first electrode, makes described first electrode have 0.001% to 1.0% X ray transmissivity.
18, a kind of manufacture method of organic electroluminescent device, this manufacture method may further comprise the steps:
Form semiconductor layer on transparency carrier, described semiconductor layer comprises source region, channel region and drain region;
Form gate insulating film comprising on the described substrate of described semiconductor layer;
On the part above the described channel region of described gate insulating film, form grid;
On the entire upper surface that comprises described grid of described gate insulating film, form interlayer dielectric;
Optionally remove described gate insulating film and described interlayer dielectric, thereby form first contact hole that is separately positioned on described source region and the described drain region;
On described interlayer dielectric, form source electrode and drain electrode, make described source electrode and described drain electrode be electrically connected to described source region and described drain region respectively by described first contact hole;
On the entire upper surface of the resulting structure that comprises described source electrode and drain electrode, form flatted membrane;
Optionally remove described flatted membrane, thereby form second contact hole that is arranged in the described drain electrode;
On described flatted membrane, form first electrode of luminescent device, make described first electrode be electrically connected to described drain electrode by described second contact hole;
On described first electrode or below the formation shielding layer, make described shielding layer cover described semiconductor layer;
On described first electrode, form organic luminous layer; And
On described organic luminous layer, form second electrode of described luminescent device.
19, manufacture method according to claim 18, wherein said shielding layer is planted materials and is made to have single layer structure or sandwich construction by being selected from the group that following material constitutes one or more: titanium, molybdenum, chromium, copper, gold, nickel, silver, tantalum, aluminium, aluminium-neodymium and tungsten.
20, manufacture method according to claim 18 is wherein controlled the material of described first electrode and the thickness of described shielding layer, makes described first electrode have 0.001% to 1.0% X ray transmissivity.
21, manufacture method according to claim 18, wherein said first electrode is made by tin indium oxide or indium zinc oxide.
22, a kind of manufacture method of organic electroluminescent device, this manufacture method may further comprise the steps:
Form thin-film transistor on transparency carrier, described thin-film transistor comprises grid, source electrode and drain electrode;
On the entire upper surface that comprises described thin-film transistor of described substrate, form flatted membrane, and form the contact hole that passes described flatted membrane, described drain electrode is exposed by described contact hole;
Form first electrode of luminescent device, make described first electrode be electrically connected to described drain electrode by described contact hole;
On described flatted membrane, form dielectric film, make described dielectric film cover described thin-film transistor and overlap with the opposed end of described first electrode; And
On described first electrode, form second electrode of described luminescent device.
23, manufacture method according to claim 22, the part that covers the described opposed end of described first electrode in the wherein said dielectric film have 3% to 10% corresponding width with the width of described first electrode.
24, manufacture method according to claim 22 is wherein carried out composition to cover the described opposed end of described first electrode to described dielectric film, makes described first electrode have 80% to 95% depth-width ratio.
25, manufacture method according to claim 22 wherein by stacked thickness is
Extremely
SiN
xOr SiO
2And form described dielectric film.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
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| KR1020070100972 | 2007-10-08 | ||
| KR20070100972 | 2007-10-08 | ||
| KR1020070106588 | 2007-10-23 | ||
| KR1020080087900 | 2008-09-05 | ||
| KR1020080087897 | 2008-09-05 |
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| CN101409305A true CN101409305A (en) | 2009-04-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNA2008101737541A Pending CN101409305A (en) | 2007-10-08 | 2008-10-08 | Organic electroluminescence device and method for manufacturing the same |
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| KR (1) | KR101308466B1 (en) |
| CN (1) | CN101409305A (en) |
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| CN111133566A (en) * | 2017-09-28 | 2020-05-08 | 夏普株式会社 | Electrode contact structure, display control driver and display device |
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| JP2003317971A (en) | 2002-04-26 | 2003-11-07 | Semiconductor Energy Lab Co Ltd | Light emitting device and manufacturing method thereof |
| KR100712181B1 (en) | 2005-12-14 | 2007-04-27 | 삼성에스디아이 주식회사 | Organic electroluminescent device and manufacturing method thereof |
| WO2007072766A1 (en) | 2005-12-22 | 2007-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
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2008
- 2008-09-05 KR KR1020080087900A patent/KR101308466B1/en active IP Right Grant
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101308466B1 (en) | 2013-09-16 |
| KR20080108062A (en) | 2008-12-11 |
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