CN101399520B - 具有高线性度与可程序增益的混频器及其相关转导电路 - Google Patents
具有高线性度与可程序增益的混频器及其相关转导电路 Download PDFInfo
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- CN101399520B CN101399520B CN200810161218XA CN200810161218A CN101399520B CN 101399520 B CN101399520 B CN 101399520B CN 200810161218X A CN200810161218X A CN 200810161218XA CN 200810161218 A CN200810161218 A CN 200810161218A CN 101399520 B CN101399520 B CN 101399520B
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- frequency mixer
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- 230000026683 transduction Effects 0.000 claims abstract description 47
- 238000010361 transduction Methods 0.000 claims abstract description 47
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000003412 degenerative effect Effects 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 18
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1491—Arrangements to linearise a transconductance stage of a mixer arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
- H03F3/45641—Measuring at the loading circuit of the differential amplifier
- H03F3/45659—Controlling the loading circuit of the differential amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0001—Circuit elements of demodulators
- H03D2200/0033—Current mirrors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D2200/00—Indexing scheme relating to details of demodulation or transference of modulation from one carrier to another covered by H03D
- H03D2200/0041—Functional aspects of demodulators
- H03D2200/0084—Lowering the supply voltage and saving power
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/453—Controlling being realised by adding a replica circuit or by using one among multiple identical circuits as a replica circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/456—A scaled replica of a transistor being present in an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45008—Indexing scheme relating to differential amplifiers the addition of two signals being made by a resistor addition circuit for producing the common mode signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45318—Indexing scheme relating to differential amplifiers the AAC comprising a cross coupling circuit, e.g. two extra transistors cross coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45356—Indexing scheme relating to differential amplifiers the AAC comprising one or more op-amps, e.g. IC-blocks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45528—Indexing scheme relating to differential amplifiers the FBC comprising one or more passive resistors and being coupled between the LC and the IC
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45594—Indexing scheme relating to differential amplifiers the IC comprising one or more resistors, which are not biasing resistor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45596—Indexing scheme relating to differential amplifiers the IC comprising one or more biasing resistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US97551907P | 2007-09-27 | 2007-09-27 | |
US60/975,519 | 2007-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101399520A CN101399520A (zh) | 2009-04-01 |
CN101399520B true CN101399520B (zh) | 2011-05-11 |
Family
ID=40507522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200810161218XA Active CN101399520B (zh) | 2007-09-27 | 2008-09-18 | 具有高线性度与可程序增益的混频器及其相关转导电路 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7973587B2 (zh) |
CN (1) | CN101399520B (zh) |
TW (1) | TWI365601B (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8369817B2 (en) * | 2008-08-22 | 2013-02-05 | Stmicroelectronics S.A. | Analog FIR filter |
US8103226B2 (en) | 2008-10-28 | 2012-01-24 | Skyworks Solutions, Inc. | Power amplifier saturation detection |
US7948294B2 (en) * | 2009-05-29 | 2011-05-24 | Mediatek Inc. | Mixer with high linearity |
CN101989835B (zh) * | 2009-07-30 | 2013-04-03 | 晨星软件研发(深圳)有限公司 | 信号处理电路 |
TWI389447B (zh) * | 2009-07-31 | 2013-03-11 | Mstar Semiconductor Inc | 訊號處理電路 |
US8112059B2 (en) * | 2009-09-16 | 2012-02-07 | Mediatek Singapore Pte. Ltd. | Mixer circuit, integrated circuit device and radio frequency communication unit |
TWI411246B (zh) * | 2010-03-09 | 2013-10-01 | Himax Tech Ltd | 收發裝置及其相關之收發系統 |
TWI439044B (zh) * | 2010-07-22 | 2014-05-21 | Mstar Semiconductor Inc | 一種用於消除二階互調失真之混頻器及其相關轉導電路 |
US8593206B2 (en) * | 2011-04-12 | 2013-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Up-conversion mixer having a reduced third order harmonic |
US8482317B2 (en) * | 2011-06-16 | 2013-07-09 | Texas Instruments Incorporated | Comparator and method with adjustable speed and power consumption |
US8493127B1 (en) * | 2012-03-13 | 2013-07-23 | Fujitsu Semiconductor Limited | System and method for linearization of a mixer |
CN103684268B (zh) * | 2012-09-18 | 2017-07-11 | 北京中电华大电子设计有限责任公司 | 一种低功耗高线性度的增益可控有源正交混频器 |
CN104767489B (zh) * | 2014-01-03 | 2018-10-26 | 瑞昱半导体股份有限公司 | 主动式混频器与主动式混频方法 |
US9590604B1 (en) * | 2014-01-24 | 2017-03-07 | Marvell International Ltd. | Current comparator |
CN104753467B (zh) * | 2015-03-25 | 2017-04-26 | 广东博威尔电子科技有限公司 | 实现功耗随增益控制变化的上变频器 |
JP2017175520A (ja) * | 2016-03-25 | 2017-09-28 | ソニー株式会社 | 変調器、及び、変調方法 |
US10063199B2 (en) * | 2016-06-09 | 2018-08-28 | Analog Devices Global | Buffer with increased headroom |
US10193497B2 (en) * | 2016-12-06 | 2019-01-29 | Qualcomm Incorporated | Enhanced broadband operation of an active mixer |
JP2020043542A (ja) * | 2018-09-13 | 2020-03-19 | 株式会社東芝 | ボルテージフォロア回路 |
JPWO2021229385A1 (zh) * | 2020-05-15 | 2021-11-18 | ||
CN111624532B (zh) * | 2020-06-10 | 2023-03-17 | 上海矽睿科技股份有限公司 | 一种磁阻感测器系统 |
TWI750035B (zh) * | 2021-02-20 | 2021-12-11 | 瑞昱半導體股份有限公司 | 低壓差穩壓器 |
US12003218B2 (en) | 2021-10-06 | 2024-06-04 | Mediatek Inc. | Mixer with filtering function and method for linearization of mixer |
CN115412041B (zh) * | 2022-10-31 | 2023-02-28 | 成都市安比科技有限公司 | 一种包含共模反馈电路的低噪声全差分放大器 |
CN116683872B (zh) * | 2023-06-08 | 2024-01-19 | 上海韬润半导体有限公司 | 一种双平衡混频器电路、集成电路及其实现方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1427480A (zh) * | 2001-12-20 | 2003-07-02 | 皇家菲利浦电子有限公司 | 跨导基本上恒定的电路 |
CN1656670A (zh) * | 2002-05-24 | 2005-08-17 | 皇家飞利浦电子股份有限公司 | 模拟混频器 |
CN1722609A (zh) * | 2004-01-30 | 2006-01-18 | 三星电子株式会社 | 具有改良二阶截取点的用于直接转换收发器的混频器电路 |
CN1868117A (zh) * | 2003-10-13 | 2006-11-22 | 皇家飞利浦电子股份有限公司 | 跨导电路 |
US20070200622A1 (en) * | 2006-01-05 | 2007-08-30 | Stmicroelectronics S.R.L. | Modulator apparatus operating at low supply voltage, and corresponding method of modulation |
-
2008
- 2008-08-22 TW TW097132020A patent/TWI365601B/zh not_active IP Right Cessation
- 2008-09-16 US US12/211,277 patent/US7973587B2/en active Active
- 2008-09-18 CN CN200810161218XA patent/CN101399520B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1427480A (zh) * | 2001-12-20 | 2003-07-02 | 皇家菲利浦电子有限公司 | 跨导基本上恒定的电路 |
CN1656670A (zh) * | 2002-05-24 | 2005-08-17 | 皇家飞利浦电子股份有限公司 | 模拟混频器 |
CN1868117A (zh) * | 2003-10-13 | 2006-11-22 | 皇家飞利浦电子股份有限公司 | 跨导电路 |
CN1722609A (zh) * | 2004-01-30 | 2006-01-18 | 三星电子株式会社 | 具有改良二阶截取点的用于直接转换收发器的混频器电路 |
US20070200622A1 (en) * | 2006-01-05 | 2007-08-30 | Stmicroelectronics S.R.L. | Modulator apparatus operating at low supply voltage, and corresponding method of modulation |
Also Published As
Publication number | Publication date |
---|---|
TW200915715A (en) | 2009-04-01 |
TWI365601B (en) | 2012-06-01 |
US20090085663A1 (en) | 2009-04-02 |
CN101399520A (zh) | 2009-04-01 |
US7973587B2 (en) | 2011-07-05 |
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Effective date of registration: 20201029 Address after: No. 1, Xingzhu Road, Hsinchu Science Park, Taiwan, China Patentee after: MEDIATEK Inc. Address before: 405, 4th floor, 1st District, Shenzhen Bay science and technology ecological park, Aohai street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: Mstar Semiconductor,Inc. Patentee before: MEDIATEK Inc. Effective date of registration: 20201029 Address after: 405, 4th floor, 1st District, Shenzhen Bay science and technology ecological park, Aohai street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Mstar Semiconductor,Inc. Patentee after: MEDIATEK Inc. Address before: 4 building 518057, block C, Institute of international technology innovation, South tech ten road, Shenzhen hi tech Zone, Guangdong Patentee before: Mstar Semiconductor,Inc. Patentee before: MSTAR SEMICONDUCTOR Inc. |