CN101386411A - 一种使用惰性气体助熔金属硅的方法 - Google Patents
一种使用惰性气体助熔金属硅的方法 Download PDFInfo
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- CN101386411A CN101386411A CNA2008100711239A CN200810071123A CN101386411A CN 101386411 A CN101386411 A CN 101386411A CN A2008100711239 A CNA2008100711239 A CN A2008100711239A CN 200810071123 A CN200810071123 A CN 200810071123A CN 101386411 A CN101386411 A CN 101386411A
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CN2008100711239A CN101386411B (zh) | 2008-05-23 | 2008-05-23 | 一种使用惰性气体助熔金属硅的方法 |
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CN2008100711239A CN101386411B (zh) | 2008-05-23 | 2008-05-23 | 一种使用惰性气体助熔金属硅的方法 |
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CN101386411A true CN101386411A (zh) | 2009-03-18 |
CN101386411B CN101386411B (zh) | 2011-08-10 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105063749A (zh) * | 2015-06-08 | 2015-11-18 | 朱超 | 一种制备高纯度多晶硅的方法 |
CN106744977A (zh) * | 2016-12-09 | 2017-05-31 | 永平县泰达废渣开发利用有限公司 | 一种运用感应炉熔硅的石墨起炉方法 |
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2008
- 2008-05-23 CN CN2008100711239A patent/CN101386411B/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105063749A (zh) * | 2015-06-08 | 2015-11-18 | 朱超 | 一种制备高纯度多晶硅的方法 |
CN105063749B (zh) * | 2015-06-08 | 2017-07-18 | 朱超 | 一种制备高纯度多晶硅的方法 |
CN106744977A (zh) * | 2016-12-09 | 2017-05-31 | 永平县泰达废渣开发利用有限公司 | 一种运用感应炉熔硅的石墨起炉方法 |
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CN101386411B (zh) | 2011-08-10 |
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Owner name: NANAN CITY SANJING SUNSHINE ELECTRIC CO., LTD. Free format text: FORMER OWNER: NANAN CITY SANJING SILICON PRODUCTS CO., LTD. Effective date: 20090626 |
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Effective date of registration: 20090626 Address after: Nanan, Fujian Province Xia Mei photovoltaic electronic information industry park, zip code: 362000 Applicant after: Nanan Sanjing Sunshine and Power Company Limited Address before: Qi Feng Town, Nanan City, Fujian Province, Sichuan Province, China Code: 362000 Applicant before: Nan'an Sanjing Silicon Refining Co., Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110810 Termination date: 20130523 |