CN101367653B - Method of manufacturing sub-micron trapezoid silicon nitride magnesium polycrystal ceramic powder - Google Patents
Method of manufacturing sub-micron trapezoid silicon nitride magnesium polycrystal ceramic powder Download PDFInfo
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- 239000000843 powder Substances 0.000 title claims abstract description 41
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title description 2
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Abstract
本发明涉及亚微米级斜方氮化硅镁多晶体陶瓷粉末的制备方法,其不同之处在于以Si—Mg前驱体与叠氮钠进行加热密封反应,控制参与反应的Si:Mg:NaN3=1:1-2.75:1-3.25,加热温度为450—600℃,反应时间为4—12小时,产物通过洗涤和干燥,即可得到颗粒状无规则的亚微米级斜方氮化硅镁多晶体陶瓷粉末。本发明与现有技术相比具有以下优点:1)氮化硅镁的合成路线与亚微米的多晶体生长同时进行,实现了温和的反应条件,制备过程也比较简单,特别是制备温度有很大程度的降低,从而能耗也大大减少;2)产物MgSiN2陶瓷粉形貌不规则、粒度达到亚微米级别、分布比较均匀,结晶程度好,纯度高,尺寸均匀。The present invention relates to a preparation method of submicron orthorhombic silicon magnesium nitride polycrystalline ceramic powder. The difference is that Si-Mg precursor and sodium azide are used for heating and sealing reaction, and Si:Mg:NaN 3 participating in the reaction is controlled. =1:1-2.75:1-3.25, the heating temperature is 450-600°C, the reaction time is 4-12 hours, and the product can be washed and dried to obtain granular irregular submicron orthorhombic silicon magnesium nitride Polycrystalline ceramic powder. Compared with the prior art, the present invention has the following advantages: 1) the synthesis route of magnesium silicon nitride is carried out simultaneously with the growth of submicron polycrystals, which realizes mild reaction conditions, and the preparation process is relatively simple, especially the preparation temperature has a wide range 2) The product MgSiN 2 ceramic powder has irregular appearance, sub-micron particle size, relatively uniform distribution, good crystallization degree, high purity and uniform size.
Description
技术领域technical field
本发明涉及陶瓷材料制备领域,具体的是涉及亚微米级斜方氮化硅镁多晶体陶瓷粉末的制备方法。The invention relates to the field of preparation of ceramic materials, in particular to a preparation method of submicron orthorhombic silicon magnesium nitride polycrystalline ceramic powder.
背景技术Background technique
MgSiN2具有高导热、高电阻、相对较好的断裂韧性和硬度、高达920℃以上的抗氧化性、低介电常数、低介电损耗、良好的抗热震性能,在各个领域尤其是在电子、国防、宇航有着较好的应用。亚微米斜方氮化硅镁多晶粉末,在制备高密度集成电路基板材料、β-Si3N4棒晶、发光材料等方面都有着巨大的应用前景。MgSiN 2 has high thermal conductivity, high electrical resistance, relatively good fracture toughness and hardness, oxidation resistance up to 920°C, low dielectric constant, low dielectric loss, and good thermal shock resistance. It is used in various fields, especially in Electronics, national defense, and aerospace have good applications. Submicron orthorhombic magnesium silicon nitride polycrystalline powder has great application prospects in the preparation of high-density integrated circuit substrate materials, β-Si 3 N 4 rod crystals, and luminescent materials.
已知合成氮化硅镁有三种方法,包括高温直接氮化法、碳热还原法、自蔓延高温合成法。关于氮化硅镁的合成和制备方法的专利报道不是很多,比如利用自蔓延高温合成方法制备氮化硅镁粉体。It is known that there are three methods for synthesizing magnesium silicon nitride, including high-temperature direct nitriding method, carbothermal reduction method, and self-propagating high-temperature synthesis method. There are not many patent reports on the synthesis and preparation methods of silicon magnesium nitride, such as the preparation of silicon magnesium nitride powder by self-propagating high temperature synthesis method.
有报道使用Mg3N2+Si3N4、Mg+Si3N4、Mg+Si三个体系与99.95%的氮气在1250℃下反应制备MgSiN2多晶粉末,碳粉与镁的硅酸盐与氮气在1250℃下反应制备MgSiN2多晶粉末,Mg+Si、预烧结的Mg2Si和Mg+Si3N4三个体系在燃烧合成炉中,不同氮气压力下反应制备MgSiN2多晶粉末。上述现有工艺对温度的要求高,资源消耗大。It has been reported to use Mg 3 N 2 +Si 3 N 4 , Mg+Si 3 N 4 , Mg+Si three systems to react with 99.95% nitrogen at 1250°C to prepare MgSiN 2 polycrystalline powder, carbon powder and magnesium silicic acid MgSiN 2 polycrystalline powder was prepared by reaction of salt and nitrogen at 1250°C, Mg+Si, pre-sintered Mg 2 Si and Mg+Si 3 N 4 were reacted in a combustion synthesis furnace under different nitrogen pressures to prepare MgSiN 2 polycrystalline powder Crystal powder. The above-mentioned existing process has high requirements on temperature and consumes a lot of resources.
发明内容Contents of the invention
本发明所要解决的问题是针对上述现有技术而提出一种亚微米级MgSiN2多晶陶瓷粉的制备方法,其反应条件温和,制备过程简单,特别是温度有很大程度的降低,能耗显著降低。The problem to be solved by the present invention is to propose a method for preparing submicron MgSiN2 polycrystalline ceramic powder in view of the above-mentioned prior art. The reaction conditions are mild and the preparation process is simple. Significantly lower.
本发明为解决上述提出的问题所采用解决方案为:亚微米级斜方氮化硅镁多晶体陶瓷粉末的制备方法,其特征在于以Si—Mg前驱体与叠氮钠进行加热密封反应,控制参与反应的Si:Mg:NaN3=1:1-2.75:1-3.25,以上为摩尔比,加热温度为450—600℃,反应时间为4—12小时,产物通过洗涤和干燥,即可得到颗粒状无规则的亚微米级斜方氮化硅镁多晶体陶瓷粉末。The solution adopted by the present invention to solve the above-mentioned problems is: the preparation method of submicron orthorhombic silicon magnesium nitride polycrystalline ceramic powder, which is characterized in that the heating and sealing reaction is carried out with Si-Mg precursor and sodium azide, and the control Participating in the reaction Si:Mg:NaN 3 =1:1-2.75:1-3.25, the above is the molar ratio, the heating temperature is 450-600°C, the reaction time is 4-12 hours, the product can be obtained by washing and drying Granular irregular submicron orthorhombic magnesium silicon nitride polycrystalline ceramic powder.
按上述方案,所述的洗涤是指将反应得到的产物依次用无水乙醇、稀盐酸或稀硝酸、蒸馏水超声洗涤5-20分钟,离心分离和提纯。According to the above scheme, the washing refers to ultrasonically washing the product obtained by the reaction with absolute ethanol, dilute hydrochloric acid or dilute nitric acid, and distilled water for 5-20 minutes, centrifuging and purifying.
按上述方案,所述的Si—Mg前驱体为SiO2+Mg、Si+Mg、[Mg2Si]或预烧结的Mg2Si。According to the above scheme, the Si—Mg precursor is SiO 2 +Mg, Si+Mg, [Mg 2 Si] or pre-sintered Mg 2 Si.
按上述方案,所述的[Mg2Si]指Si粉和Mg粉按照摩尔比Si:Mg为1:2称量后混合,经过24小时的球磨后所得。According to the above scheme, the [Mg 2 Si] refers to Si powder and Mg powder according to the molar ratio Si:Mg of 1:2, weighed and mixed, and obtained after ball milling for 24 hours.
按上述方案,所述的预烧结的Mg2Si是指Si粉和Mg粉按照摩尔比Si:Mg为1:2称量后混合,在700℃下烧结48小时所得。According to the above scheme, the pre-sintered Mg 2 Si refers to Si powder and Mg powder according to the molar ratio Si:Mg of 1:2, mixed after weighing, and sintered at 700°C for 48 hours.
而前述的SiO2+Mg、Si+Mg分别是指SiO2与镁的混合、硅与镁的混合,以上均为分析纯。The aforementioned SiO 2 +Mg and Si+Mg respectively refer to the mixture of SiO 2 and magnesium, and the mixture of silicon and magnesium, all of which are analytically pure.
本发明制备的亚微米级MgSiN2多晶陶瓷粉是以[Mg2Si]、Mg+Si、SiO2+Mg、预烧结的Mg2Si四个Si—Mg前驱体分别与提供氮源的叠氮钠(NaN3)反应,化学反应方程式可分别表示为:The submicron-sized MgSiN 2 polycrystalline ceramic powder prepared by the present invention is composed of [Mg 2 Si], Mg+Si, SiO 2 +Mg, and pre-sintered Mg 2 Si four Si—Mg precursors, respectively, and a stack of nitrogen sources. Sodium nitrogen (NaN 3 ) reaction, the chemical reaction equation can be expressed as:
[Mg2Si]+2NaN3=MgSiN2+2Na+Mg+2N2(1)[Mg 2 Si]+2NaN 3 =MgSiN 2 +2Na+Mg+2N 2 (1)
2Si+2Mg+2NaN3=2MgSiN2+2Na+N2(2)2Si+2Mg+2NaN 3 =2MgSiN2+ 2 Na+N 2 (2)
3SiO2+8Mg+2NaN3=3MgSiN2+5MgO+Na2O(3)3SiO 2 +8Mg+2NaN 3 =3MgSiN 2 +5MgO+Na 2 O(3)
Mg2Si(预烧结)+2NaN3=MgSiN2+2Na+Mg+2N2(4)Mg 2 Si (pre-sintered) + 2NaN 3 = MgSiN 2 + 2Na + Mg + 2N 2 (4)
叠氮钠是一种价格比较便宜的固体氮源,而且叠氮钠受热分解后生成的钠单质熔点低(97.82℃),不仅可以作为反应物和吸热剂来改变化学反应和缓和反应,同时也作为氮化硅镁亚微米多晶体的生长媒介,从而可以制备结晶较好,纯度较高和形貌均匀的产品。Sodium azide is a relatively cheap solid nitrogen source, and the sodium azide generated after thermal decomposition has a low melting point (97.82°C), which can not only be used as a reactant and endothermic agent to change chemical reactions and ease reactions, but also It is also used as a growth medium for submicron polycrystalline silicon magnesium nitride, so that products with better crystallization, higher purity and uniform appearance can be prepared.
本发明所用的SiO2、Mg、Si、NaN3以及其它试剂都是分析纯试剂。按照预先设计的反应物配比称量相应的反应物,加入到容积大约为20ml的不锈钢反应釜中,把密封的反应釜放入井式坩锅炉中,在预定的温度下(450—600℃)恒温反应4—12小时。然后自然冷却,开釜并处理收集产物,产物经过无水乙醇溶解金属钠,然后用蒸馏水洗涤出去水溶解性的杂质,其中还要加入适量的稀盐酸或硝酸处理初品,以便于除去其中的碱金属及其氧化物。洗涤后的产物在真空干燥箱内于80℃下干燥24小时,即可得到最后的样品。SiO 2 , Mg, Si, NaN 3 and other reagents used in the present invention are analytical reagents. Weigh the corresponding reactants according to the pre-designed ratio of reactants, add them into a stainless steel reaction kettle with a volume of about 20ml, put the sealed reaction kettle into a well-type crucible boiler, and set it at a predetermined temperature (450-600°C) ) constant temperature reaction for 4-12 hours. Then cool naturally, open the kettle and process and collect the product. The product is dissolved in anhydrous ethanol to dissolve sodium metal, and then washed with distilled water to remove water-soluble impurities. An appropriate amount of dilute hydrochloric acid or nitric acid is also added to treat the initial product, so as to remove it. Alkali metals and their oxides. The washed product was dried in a vacuum oven at 80° C. for 24 hours to obtain the final sample.
所得产物样品X-射线衍射分析用XD-5A型X射线粉末衍射仪(30kv,20mA,λ=1.5406),2θ在10-80°范围。用电子散射能谱(EDS)分析其组成。产物样品还使用JSM-5510LV型场发射扫描电子显微镜(SEM)观察形貌,其制样方法是直接采用产物粉末分布在双面胶上并粘在样品铜台上喷金后观察。FTIR分析采用Impact420型红外光谱仪,X-射线能谱分析采用FALCON型X-射线能谱仪(C为内标)。Gained product sample X-ray diffraction analysis uses XD-5A type X-ray powder diffractometer (30kv, 20mA, λ=1.5406 ), 2θ is in the range of 10-80°. Its composition was analyzed by electron scattering spectroscopy (EDS). The morphology of the product samples was also observed using a JSM-5510LV field emission scanning electron microscope (SEM). The sample preparation method was to directly use the product powder to distribute on the double-sided adhesive tape and stick it on the copper platform of the sample to spray gold for observation. FTIR analysis adopts Impact420 infrared spectrometer, and X-ray energy spectrum analysis adopts FALCON type X-ray energy spectrometer (C is internal standard).
本发明利用的是化学合成法,在低温度下反应得到MgSiN2陶瓷材料,是一种制备MgSiN2陶瓷粉体的新方法,以NaN3为N源容易制备碱土金属氮化硅陶瓷粉体,包括四种制备MgSiN2粉体的反应路线,分别用预烧结的Mg2Si、[Mg2Si]、Mg+Si、SiO2+Mg四种硅镁体系都能够很容易制备的MgSiN2。不同的Si—Mg反应体系对产物的结晶形成有影响。经过预烧结和球磨过的Si—Mg体系比其它两个Si—Mg反应体系较容易制备MgSiN2,且样品结晶度好。在一定温度范围内,随着温度的升高,制备出来的MgSiN2样品晶粒生长度越好。The present invention utilizes a chemical synthesis method to react at low temperature to obtain MgSiN2 ceramic material, which is a new method for preparing MgSiN2 ceramic powder, and it is easy to prepare alkaline earth metal silicon nitride ceramic powder with NaN3 as the N source. Including four reaction routes for preparing MgSiN 2 powder, MgSiN 2 can be easily prepared by using pre-sintered Mg 2 Si, [Mg 2 Si], Mg+Si, SiO 2 +Mg four silicon-magnesium systems respectively. Different Si—Mg reaction systems have influence on the crystal formation of the product. The pre-sintered and ball-milled Si-Mg system is easier to prepare MgSiN 2 than the other two Si-Mg reaction systems, and the crystallinity of the sample is better. Within a certain temperature range, as the temperature increases, the grain growth of the prepared MgSiN 2 samples is better.
本发明与现有技术相比具有以下优点:1)氮化硅镁的合成路线与亚微米的多晶体生长同时进行,由于采用NaN3作为氮源,其本身也是多晶体生长介质,不仅实现了温和的反应条件,制备过程也比较简单,特别是制备温度有很大程度的降低,从而能耗也大大减少;2)产物MgSiN2陶瓷粉形貌不规则、粒度达到亚微米级别、分布比较均匀,产物结晶程度比较好,纯度高,尺寸均匀。Compared with the prior art, the present invention has the following advantages: 1) the synthesis route of magnesium silicon nitride is carried out simultaneously with the growth of submicron polycrystals, and since NaN is used as the nitrogen source, it is also a polycrystal growth medium itself, which not only realizes Mild reaction conditions, the preparation process is also relatively simple, especially the preparation temperature is greatly reduced, thereby greatly reducing energy consumption; 2) The product MgSiN 2 ceramic powder has irregular morphology, sub-micron particle size, and relatively uniform distribution , The crystallization degree of the product is relatively good, the purity is high, and the size is uniform.
附图说明Description of drawings
图1是产物氮化硅镁的XRD谱图:[Mg2Si]+NaN3,600℃-12小时。Figure 1 is the XRD spectrum of the product magnesium silicon nitride: [Mg 2 Si]+NaN 3 , 600°C-12 hours.
图2是产物氮化硅镁的SEM照片:[Mg2Si]+NaN3,600℃-12小时。Figure 2 is the SEM photograph of the product magnesium silicon nitride: [Mg 2 Si]+NaN 3 , 600°C-12 hours.
图3是产物氮化硅镁的EDS谱图:[Mg2Si]+NaN3,600℃-12小时。Figure 3 is the EDS spectrum of the product magnesium silicon nitride: [Mg 2 Si]+NaN 3 , 600°C-12 hours.
图4是产物氮化硅镁的FTIR谱图:a-Mg+Si+NaN3,500℃-12小时;b-SiO2+Mg+NaN3,600℃-12小时;c-预烧结的Mg2Si+NaN3,600℃-12小时;d-[Mg2Si]+NaN3,600℃-12小时。Figure 4 is the FTIR spectrum of the product magnesium silicon nitride: a-Mg+Si+NaN 3 , 500°C-12 hours; b-SiO 2 +Mg+NaN 3 , 600°C-12 hours; c-pre-sintered Mg 2 Si+NaN 3 , 600°C-12 hours; d-[Mg 2 Si]+NaN 3 , 600°C-12 hours.
具体实施方式Detailed ways
下面结合实施例及附图对本发明作进一步说明,但不能作为对本发明的限定。The present invention will be further described below in conjunction with the embodiments and accompanying drawings, but it cannot be regarded as a limitation of the present invention.
实施例1Example 1
取2.65克[Mg2Si]和4.50克NaN3(Si:Mg:NaN3=1:2:1.98)加入容积为20ml的不锈钢反应釜中,将反应釜盖好拧紧,密封后放入井式坩锅炉中,于600℃恒温反应6小时,自然冷却后,产物依次用无水乙醇、稀盐酸(0.1M)和蒸馏水超声洗涤5-20分钟,除去碱金属及其氧化物、可溶性副产物等杂质,离心分离后在真空干燥箱中于80℃下干燥24小时,得到2.13克灰白色粉末。经过结构、微结构、组成和形貌分析,证明产物就是比较纯的无规则斜方氮化硅镁多晶体粉末,其形貌和尺寸见附图2。Take 2.65 grams of [Mg 2 Si] and 4.50 grams of NaN 3 (Si:Mg:NaN 3 =1:2:1.98) into a stainless steel reaction kettle with a volume of 20ml, tighten the lid of the reaction kettle, seal it and put it into the well In a crucible boiler, react at a constant temperature of 600°C for 6 hours. After natural cooling, the product is washed with absolute ethanol, dilute hydrochloric acid (0.1M) and distilled water for 5-20 minutes in order to remove alkali metals and their oxides, soluble by-products, etc. Impurities were separated by centrifugation and dried in a vacuum oven at 80° C. for 24 hours to obtain 2.13 g of off-white powder. After analyzing the structure, microstructure, composition and appearance, it is proved that the product is relatively pure random orthorhombic silicon magnesium nitride polycrystalline powder, and its appearance and size are shown in Figure 2.
实施例2Example 2
取2.82克SiO2、3.07克Mg和3.18克NaN3(Si:Mg:NaN3=1:2.72:1.04)加入容积为20ml的不锈钢反应釜中,将反应釜盖好拧紧,密封后放入井式坩锅炉中,于500℃恒温反应12小时,自然冷却后,产物依次用无水乙醇、稀盐酸(0.1M)和蒸馏水超声洗涤5-20分钟,除去碱金属及其氧化物、可溶性副产物等杂质,离心分离后在真空干燥箱中于80℃下干燥24小时,得到2.04克灰白色粉末。经过结构、微结构、组成和形貌分析,证明产物就是比较纯的无规则斜方氮化硅镁多晶体粉末。Take 2.82 grams of SiO 2 , 3.07 grams of Mg and 3.18 grams of NaN 3 (Si:Mg:NaN 3 =1:2.72:1.04) into a stainless steel reaction kettle with a volume of 20ml, tighten the lid of the reaction kettle, seal it and put it into the well In a type crucible boiler, react at a constant temperature of 500°C for 12 hours. After natural cooling, the product is washed with absolute ethanol, dilute hydrochloric acid (0.1M) and distilled water for 5-20 minutes in order to remove alkali metals and their oxides and soluble by-products. After centrifugation, the mixture was dried in a vacuum oven at 80° C. for 24 hours to obtain 2.04 g of off-white powder. After structure, microstructure, composition and morphology analysis, it is proved that the product is relatively pure random orthorhombic silicon magnesium nitride polycrystalline powder.
实施例3Example 3
取0.90克Si、0.86克Mg和3.00克NaN3(Si:Mg:NaN3=1:1.11:1.44)加入容积为20ml的不锈钢反应釜中,将反应釜盖好拧紧,密封后放入井式坩锅炉中,于600℃恒温反应12小时,自然冷却后,产物依次用无水乙醇、稀盐酸(0.1M)和蒸馏水超声洗涤5-20分钟,除去碱金属及其氧化物、可溶性副产物等杂质,离心分离后在真空干燥箱中于80℃下干燥24小时,得到2.43克灰白色粉末。经过结构、微结构、组成和形貌分析,证明产物就是比较纯的无规则斜方氮化硅镁多晶体粉末。Take 0.90 g of Si, 0.86 g of Mg and 3.00 g of NaN 3 (Si: Mg: NaN3 = 1: 1.11: 1.44) into a stainless steel reactor with a volume of 20 ml, tighten the lid of the reactor, seal it and put it into a well-type crucible In the boiler, react at a constant temperature of 600°C for 12 hours. After natural cooling, the product is ultrasonically washed with absolute ethanol, dilute hydrochloric acid (0.1M) and distilled water for 5-20 minutes to remove impurities such as alkali metals and their oxides, soluble by-products, etc. , and dried in a vacuum oven at 80° C. for 24 hours after centrifugation to obtain 2.43 g of off-white powder. After structure, microstructure, composition and morphology analysis, it is proved that the product is relatively pure random orthorhombic silicon magnesium nitride polycrystalline powder.
实施例4Example 4
取1.20克预烧结的Mg2Si和3.31克NaN3(Si:Mg:NaN3=1:2:1.98)加入容积为20ml的不锈钢反应釜中,将反应釜盖好拧紧,密封后放入井式坩锅炉中,于450℃恒温反应12小时,自然冷却后,产物依次用无水乙醇、稀硝酸(0.1M)和蒸馏水超声洗涤5-20分钟,除去碱金属及其氧化物、可溶性副产物等杂质,离心分离后在真空干燥箱中于80℃下干燥24小时,得到0.97克灰白色粉末。经过结构、微结构、组成和形貌分析,证明产物就是比较纯的无规则斜方氮化硅镁多晶体粉末。Take 1.20 grams of pre-sintered Mg 2 Si and 3.31 grams of NaN 3 (Si:Mg:NaN 3 =1:2:1.98) into a stainless steel reaction kettle with a volume of 20ml, tighten the lid of the reaction kettle, seal it and put it into the well In a type crucible boiler, react at a constant temperature of 450°C for 12 hours. After natural cooling, the product is washed with absolute ethanol, dilute nitric acid (0.1M) and distilled water for 5-20 minutes in order to remove alkali metals and their oxides and soluble by-products. After centrifugation and separation of impurities, the mixture was dried in a vacuum oven at 80° C. for 24 hours to obtain 0.97 g of off-white powder. After structure, microstructure, composition and morphology analysis, it is proved that the product is relatively pure random orthorhombic silicon magnesium nitride polycrystalline powder.
表1是产物氮化硅镁XRD数据与JCPDF卡片#52—0797标准卡片数据比较。Table 1 is the comparison between XRD data of the product magnesium silicon nitride and JCPDF card #52-0797 standard card data.
附图1给出了样品的XRD谱图,与JCPDF卡片#52—0797相符合,附表1比较了产物氮化硅镁XRD数据与JCPDF卡片#52—0797标准卡片数据,结果表明,所获得的最终产物为氮化硅镁。Accompanying drawing 1 has provided the XRD spectrogram of sample, accords with JCPDF card #52-0797, and attached table 1 compares product silicon nitride magnesium XRD data and JCPDF card #52-0797 standard card data, and the results show that the obtained The final product is magnesium silicon nitride.
附图2是样品的SEM谱图,展示出了产物形貌和尺寸,结果表明,所获得的氮化硅镁多晶粉末是无规则的,其平均粒径约为200nm。Accompanying drawing 2 is the SEM spectrogram of the sample, has demonstrated product shape and size, and the result shows, the polycrystalline powder of magnesium silicon nitride obtained is irregular, and its average particle size is about 200nm.
附图3是产物样品的X-射线能谱图,从图中可见,结合能在390.4eV、1304.1eV和1840.2eV处的峰分别与N1s、Mgls、Sils相对应,表明样品表面含有Mg、Si、N。图2b所示,样品中Mg、Si、N各元素原子百分比,原子比例Mg:Si:N为1:1.50:0.89,与理论比例(1:1:2)有差异,这主要是由于样品表面组分分布不均并且只能够测量样品表面5nm以内的信息。此外,图中还含有少量的Au、C、O、Cu等成份,C是内标,O是样品表面吸附所致,Au是测试中喷金的原因,样品放在铜网上测量而带入Cu。Accompanying drawing 3 is the X-ray energy spectrogram of the product sample, as can be seen from the figure, the peaks of the binding energy at 390.4eV, 1304.1eV and 1840.2eV are respectively corresponding to N1s, Mgls, Sils, indicating that the sample surface contains Mg, Si , N. As shown in Figure 2b, the atomic percentages of Mg, Si, and N in the sample, the atomic ratio Mg:Si:N is 1:1.50:0.89, which is different from the theoretical ratio (1:1:2), which is mainly due to the The components are not uniformly distributed and can only measure information within 5nm of the sample surface. In addition, the figure also contains a small amount of Au, C, O, Cu and other components, C is the internal standard, O is caused by the surface adsorption of the sample, Au is the reason for spraying gold in the test, and the sample is placed on the copper grid to measure and bring Cu .
附图4所示,Mg/Si/NaN3,500℃-12小时;SiO2/Mg/NaN3,600℃-12小时;预烧结的Mg2Si/NaN3,600℃-12小时;[Mg2Si]/NaN3,600℃-12小时四种条件下所制备的样品的FTIR谱图。在1380cm-1左右的吸收带应该是N—N键的伸缩振动,在920cm-1左右的吸收带应该是N—Si键的伸缩振动,在1080cm-1左右的吸收带应该是Si—O键的伸缩振动,在1640cm-1左右的吸收带是应该是N—H键的伸缩振动,在3440cm-1左右位置的峰是水分子的吸收峰。水分子的存在是因为干燥不完全或空气中水蒸气吸附在样品表面所致,Si—O和N—H的存在是由于样品在洗涤的过程中被水解。图中970、880、740、620、540、520cm-1处的吸收峰也可能是MgSiN2的特征谱带位置(波数)范围,但其标准红外谱带有待于近一步研究。As shown in Figure 4, Mg/Si/NaN 3 , 500°C-12 hours; SiO 2 /Mg/NaN 3 , 600°C-12 hours; pre-sintered Mg 2 Si/NaN3, 600°C-12 hours; [Mg 2 Si]/NaN3, FTIR spectra of samples prepared under four conditions of 600°C-12 hours. The absorption band around 1380cm -1 should be the stretching vibration of N—N bond, the absorption band around 920cm -1 should be the stretching vibration of N—Si bond, and the absorption band around 1080cm -1 should be Si—O bond The stretching vibration of the N—H bond should be the absorption band around 1640cm -1 , and the peak around 3440cm -1 is the absorption peak of water molecules. The existence of water molecules is due to incomplete drying or the adsorption of water vapor in the air on the surface of the sample, and the existence of Si—O and N—H is due to the hydrolysis of the sample during the washing process. The absorption peaks at 970, 880, 740, 620, 540, and 520 cm -1 in the figure may also be the characteristic band position (wavenumber) range of MgSiN 2 , but its standard infrared band needs further study.
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