CN101346038A - Multilayer substrate and method for manufacturing same - Google Patents
Multilayer substrate and method for manufacturing same Download PDFInfo
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- CN101346038A CN101346038A CNA2007101368788A CN200710136878A CN101346038A CN 101346038 A CN101346038 A CN 101346038A CN A2007101368788 A CNA2007101368788 A CN A2007101368788A CN 200710136878 A CN200710136878 A CN 200710136878A CN 101346038 A CN101346038 A CN 101346038A
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- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 35
- 239000010410 layer Substances 0.000 claims abstract 67
- 239000002344 surface layer Substances 0.000 claims abstract 3
- 238000005538 encapsulation Methods 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 claims 10
- 238000003466 welding Methods 0.000 abstract description 16
- 238000005476 soldering Methods 0.000 description 53
- 230000010354 integration Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 238000003825 pressing Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007731 hot pressing Methods 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 206010040844 Skin exfoliation Diseases 0.000 description 1
- 241000307523 Xenostegia media Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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Abstract
The invention discloses a flat multilayer substrate and a manufacturing method thereof. The multilayer substrate of the invention comprises a surface dielectric layer and at least one pad layer. The surface dielectric layer is positioned on one surface layer of the multilayer substrate, the welding pad layer is embedded in the surface dielectric layer, and the surface dielectric layer and the welding pad layer form the multilayer substrate. The manufacturing method of the invention is to form at least one layer of welding pad layer on the surface of a flat carrier plate, then form a layer of surface dielectric layer to cover the welding pad layer, so that the welding pad layer is embedded in the surface dielectric layer. The multi-layer substrate is separated from the surface of the carrier plate, and the surface dielectric layer and the welding pad layer form the multi-layer substrate with a flat surface.
Description
Technical field
The invention relates to a kind of multilager base plate and manufacture method thereof, refer to a kind of smooth multilager base plate and manufacture method thereof especially.
Background technology
The miniaturization of any kind electronic product now is inevasible trend, along with semiconductor crystal wafer processing procedure size is constantly dwindled, the correlation technique of back segment encapsulation also must be thereupon towards the direction progress of microminiaturization.Therefore, when the integration of current integrated circuit constantly improves, use the high multilager base plate of integration, be integrated into high-density systems and be inevitable trend in order to brilliant unit or assembly are encapsulated.
Please refer to Fig. 1, is the rough schematic of the multilager base plate of prior art.The surface of so-called multilager base plate, the promptly follow-up surface that will encapsulate with a brilliant unit or assembly, multilager base plate comprises soldering pad layer 102, surface dielectric layer 104 and welding resisting layer 106.Soldering pad layer 102 belows are the metallic circuit layer 108 with its electrically connect.Mostly make several layer conductor layers and several layers of dielectric layer (not shown) of multilager base plate with pressing method, Layer increasing method etc. according to prior art.And the thickness of surface dielectric layer 104 wants big many than the thickness of soldering pad layer 102, metallic circuit layer 108, for example only about several μ m of the soldering pad layer 102 of general now multilager base plate, metallic circuit layer 108 thickness are to tens of μ m, and the thickness of surface dielectric layer 104 may thick reaching about tens of μ m to 200 μ m.Therefore, because the existence of the metallic circuit layer 108 of soldering pad layer 102 belows, no matter be to make multilager base plate with pressing method or Layer increasing method, all are dielectric layer material with a fixed thickness, make surface dielectric layer 104, therefore when multi-layer substrate surface forms soldering pad layer 102, must cause the unevenness on surface as shown in Figure 1, but the thickness of surface dielectric layer 104 is about tens of μ m to 200 μ m as described above, and metallic circuit layer 108 thickness approximate number μ m in below are extremely about tens of μ m.Medium thickness is more than the metal bed thickness, in the processing procedure of pressing method or Layer increasing method, can utilize the adjustment of process parameter that dielectric layer is out of shape a littlely can to compensate the surface uneven to acceptable scope.
Yet because the integration of integrated circuit constantly improves, based on volume-diminished and electrical consideration, the thickness of soldering pad layer 102, metallic circuit layer 108 and surface dielectric layer 104 also reduces thereupon.For keeping the electrical consideration of signal conduction, soldering pad layer 102, metallic circuit layer 108 thickness to reduce amplitude limited, but the thickness of surface dielectric layer 104 reduces significantly, industry is more attempted making thickness and can be reached surface dielectric layer 104 about 10 μ m now.The thickness of surface dielectric layer 104 is about 10 μ m as described above, and below metallic circuit layer 108 thickness are approximately about several μ m to 10 μ m.The yardstick of surface dielectric layer 104 thickness and metallic circuit layer 108 thickness is approaching and quite, the then aforementioned means of dielectric layer 104 distortion that make will be not enough to compensate surperficial unevenness, inevitably, more will highlight the uneven problem of multi-layer substrate surface.
Please refer to Fig. 2 is according to prior art, brilliant unit is encapsulated as the rough schematic of example with chip package (Flip-Chip) processing procedure.Multilager base plate according to the prior art manufacturing has dielectric layer 103 and corresponding metallic circuit layer 107-1,107-2, surface dielectric layer 104 and corresponding metallic circuit layer 108-1,108-2,108-3.And multilager base plate has soldering pad layer 102-1,102-2,102-3 on metallic circuit layer 108-1,108-2,108-3.
As shown in Figure 2, encapsulation technology is to be main flow with chip package (Flip Chip) technology now, chip package be a kind of with first 110 surfaces of crystalline substance down, the technology that brilliant first surface contacts 112-1,112-2,112-3 is engaged with soldering pad layer 102-1,102-2, the 102-3 of multilager base plate link by metal coupling 120-1,120-2,120-3.Moreover, between multilager base plate soldering pad layer 102-1,102-2,102-3 and brilliant first surface contacts 112-1,112-2,112-3 (electrode), must be to mate one to one, and must engage accurately.This chip package technology is earlier this multilager base plate to be fixed on the packaging tool in advance, after aiming at the position of soldering pad layer 102-1,102-2,102-3 of projection 120-1,120-2 in the brilliant unit, 120-3 (bump) and multilager base plate, carry out chip package with hot pressing mode again.Yet after must making the equal alignment pad layer of projection 120-1,120-2,120-3 102-1,102-2, the 102-3 on brilliant first surface contacts 112-1,112-2, the 112-3 and engaging (Bonding), chip package just is counted as merit.But the surface of multilager base plate, may be because of the cause of circuit design, there are metallic circuit layer 107-1,107-2 in metallic circuit layer 108-1,108-3 below, but metallic circuit layer 108-2 do not have the corresponding metal level in below, thereby other soldering pad layer of soldering pad layer 102-2 aspect ratio 102-1,102-3 are highly low, when carrying out aforementioned chip package, can cause projection 120-2 to fail to link soldering pad layer 102-2 and brilliant first surface contacts 112-2.
Yet not only for chip package, for the multijunction encapsulation of other high density, for example: ball-grid packages (BGA), plane lock lattice array (LGA) and wafer-level packaging (CSP), as long as there is a metal coupling to fail to link soldering pad layer and brilliant unit or assembly surface contact, encapsulation promptly fails.Therefore, the flatness for multi-layer substrate surface, brilliant first 110 surfaces or assembly surface requires higher than in the past.
General chip package is the projection of 100 μ m as using bump height (bump Height), and height admissible error value that can be for reference is greatly about about ± 10 μ m.And because the integration of integrated circuit improves, the soldering pad layer density of unit are also can improve, and bump height (bump Height) is then further dwindled, and the height admissible error is worthwhile right just littler.Therefore, further to the flatness (being the coplanarity of soldering pad layer and dielectric layer) of multi-layer substrate surface, or require just higher to the flatness of arbitrary soldering pad layer itself.The metallic circuit layer thickness of general industry manufacturing mostly is tens of μ m, even little of several μ m, therefore if fail to make effectively the multi-layer substrate surface planarization, will have a strong impact on the yield and the reliability of chip package.
Therefore, if can make a multilager base plate that has an even surface,, can improve the reliability of encapsulation to aforementioned chip package or the multijunction encapsulation of other high density.And can further dwindle bump height (bump height), help further improving the density of overall package.
Summary of the invention
Main purpose of the present invention is to provide a kind of multilager base plate and manufacture method thereof, can improve the flatness of the soldering pad layer and the dielectric layer of the multilager base plate that is used to encapsulate, and improves the yield and the reliability of encapsulation, further to improve the density of overall package.
For reaching aforementioned purpose of the present invention, multilager base plate of the present invention comprises a surface dielectric layer and at least one soldering pad layer.Surface dielectric layer is positioned at a top layer of multilager base plate, and soldering pad layer then is embedded in surface dielectric layer, and surface dielectric layer and soldering pad layer form multilager base plate.
Multilager base plate of the present invention, the side of soldering pad layer and surface dielectric layer driving fit, and a surface of soldering pad layer has a coplane with the surface of surface dielectric layer make the flatness of the soldering pad layer that is fixed in the multilager base plate on the packaging tool and surface dielectric layer good.When its when encapsulating with an assembly surface, can improve the yield and the reliability of encapsulation.
For reaching aforementioned purpose of the present invention, the method that the present invention makes multilager base plate comprises the following step:
Form at least one soldering pad layer on a smooth support plate surface;
Form a surface dielectric layer, cover soldering pad layer, make soldering pad layer be embedded in surface dielectric layer; And
From the support plate surface isolation, surface dielectric layer and soldering pad layer form a smooth multilager base plate with surface dielectric layer and soldering pad layer.
Forming this smooth multilager base plate, is in order to encapsulating with an assembly surface, promptly a soldering pad layer of multilager base plate and a contact on a package assembling surface to be encapsulated, and wherein this assembly can be a brilliant unit, and this encapsulation kenel then is a chip package.The present invention forms soldering pad layer and surface dielectric layer because of utilizing a smooth support plate surface, makes soldering pad layer be embedded in surface dielectric layer, has a coplane, and makes multi-layer substrate surface flatness height of the present invention.Along with the integration raising of integrated circuit, bump pitch (bump pitch) must be dwindled, and bump height (bump height) also need reduce thereupon.Therefore multilager base plate of the present invention is when follow-up chip package or the multijunction encapsulation of other high density, can use the littler projection of bump height (bump height), simultaneously also can be owing to the surface of multilager base plate of the present invention, multilager base plate is consistent with the parallel distance between brilliant unit or assembly surface in the time of can guaranteeing to encapsulate, and can improve the reliability of encapsulation, further improve the density of overall package.
Description of drawings
Fig. 1 is the rough schematic of prior art multilager base plate.
Fig. 2 is according to prior art, brilliant unit is encapsulated as the rough schematic of example with chip package (Flip Chip) processing procedure.
Fig. 3 is the rough schematic of multi-layer substrate surface of the present invention.
Fig. 4 A to Fig. 4 C is a method flow diagram of making the multilager base plate that the present invention has an even surface.
Fig. 5 is the multilager base plate that utilizes the present invention to have an even surface, and carries out the rough schematic of chip package (Flip Chip) processing procedure.
Embodiment
Please refer to Fig. 3, is the rough schematic of multi-layer substrate surface of the present invention.Multilager base plate of the present invention comprises one deck soldering pad layer 302 and layer of surface dielectric layer 304 at least.And multilager base plate can further comprise one deck welding resisting layer 306.Soldering pad layer 302 belows then are the metallic circuit layer 308 of multilager base plate.Soldering pad layer 302 of the present invention is to be embedded in surface dielectric layer 304, and soldering pad layer 302 sides and surface dielectric layer 304 driving fits, can strengthen adhesive strength between the two.Moreover the surface of the surface of soldering pad layer 302 and surface dielectric layer 304 has a coplane, makes multi-layer substrate surface flatness height of the present invention, and just, it is poor not have section between the surface of the surface of soldering pad layer 302 and surface dielectric layer 304.
Then, please refer to Fig. 4 A to Fig. 4 C, is the method flow diagram of the multilager base plate that has an even surface of manufacturing of the present invention.At first, Fig. 4 A represents that manufacture method of the present invention after smooth support plate 400 surfaces form a welding resisting layer 401 earlier, forms the some soldering pad layers that comprise soldering pad layer 402 again.For example: can a surface flatness good silicon wafer forms welding resisting layer 401 as this support plate 400 with coating method, forms soldering pad layer 402 in modes such as etching, electroforming or lithography process on welding resisting layer 401 surfaces.Fig. 4 B is illustrated in and forms after soldering pad layer 402 grades, forms a surface dielectric layer 404 again, covers soldering pad layer 402 etc., makes soldering pad layer 402 grades be embedded in surface dielectric layer 404.Again further according to the multilager base plate design, can be after forming surface dielectric layer 404, can carry out perforate in metallic circuit layer precalculated position to surface dielectric layer 404, further form metallic circuit layer 308 as shown in Figure 3, and more dielectric layer, metallic circuit layer etc. (in Fig. 4 B only the expression part of making multilager base plate), to finish the inline structure of multilager base plate.Fig. 4 C represents welding resisting layer 401 from support plate 400 surface isolation, after spinning upside down, in positions such as soldering pad layers 402 welding resisting layer 401 is carried out perforate again, perhaps, welding resisting layer 401 also can be in surface dielectric layer 404 together with embedded soldering pad layer 402 grades from support plate 400 sur-face peelings, after spinning upside down, form in the surface of soldering pad layer 402 and surface dielectric layer 404 again.Like this, welding resisting layer 401, soldering pad layer 402 etc. and surface dielectric layer 404 promptly constitute multilager base plate of the present invention.The present invention can be the method for multilager base plate from support plate 400 surface isolation, for example: sacrifice layer method or support plate surface attachment weakening strength method etc.
Be different from the multilager base plate manufacture method of prior art in the pressing mode, for the reliability that makes follow-up chip package or the multijunction encapsulation of other high density improves, improve the density of overall package, multilager base plate must have suitable flatness, yet, prior art uses pressing method, Layer increasing method to make multilager base plate, and the multi-layer substrate surface structure is subjected to the influence of lower metal line layer all unavoidablely and produces the top layer and rise and fall.But the present invention utilizes the good support plate of a surface flatness 400, embedded soldering pad layer 402 is in surface dielectric layer 404, produce multi-layer substrate surface structure with smooth top layer, even the integration of IC encapsulation constantly improves, based on volume-diminished and electrical consideration, the thickness of the dielectric layer 404 of multilager base plate need reduce thereupon, still has the good surface texture of surface flatness according to the multilager base plate of manufacturing of the present invention.Therefore, when carrying out follow-up chip package or the multijunction encapsulation of other high density, more can improve the yield and the reliability of encapsulation.
Please refer to Fig. 5, is to illustrate the multilager base plate that utilizes the present invention to have an even surface, and carrying out chip package (Flip Chip) processing procedure is the rough schematic of example.Chip package is the multi-layer substrate surface (one side with welding resisting layer 401) with soldering pad layer 402 and surface dielectric layer 404 to be placed up be fixed in (not shown) on the packaging tool.Then,, behind the position with alignment pad layer 402 grades such as projections 420, engage (Bonding) as shown in the figure with first 410 surfaces of crystalline substance down, can finish chip package with hot pressing mode.
Advantage of the present invention promptly is, make multilager base plate owing to utilize the good support plate of a surface flatness 400, therefore compare with the multilager base plate that prior art shown in Figure 2 is made, has the high surface of flatness, for chip package or the multijunction encapsulation of other type high density, for example: ball-grid packages (BGA), plane lock lattice array (LGA) and wafer-level packaging (CSP), integration raising along with integrated circuit, must dwindle because of the spacing (bump pitch) of projection 420, the height of projection 420 (bump height) also need reduce thereupon.Use multilager base plate of the present invention, can use the littler projection 420 of bump height (bump height), simultaneously also because the flatness of multilager base plate of the present invention, multi-layer substrate surface is consistent with the parallel distance between assembly or brilliant first 410 surfaces in the time of can guaranteeing to encapsulate, when guaranteeing encapsulation procedure, projection 420 grades successfully link all soldering pad layers 402 and assembly or brilliant first surface electrode (contact) 412, and can improve the reliability of encapsulation, further improve the density of overall package.
Claims (17)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101368788A CN101346038B (en) | 2007-07-11 | 2007-07-11 | Multilayer substrate and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101368788A CN101346038B (en) | 2007-07-11 | 2007-07-11 | Multilayer substrate and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN101346038A true CN101346038A (en) | 2009-01-14 |
| CN101346038B CN101346038B (en) | 2011-01-26 |
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| CN2007101368788A Active CN101346038B (en) | 2007-07-11 | 2007-07-11 | Multilayer substrate and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456649A (en) * | 2010-10-26 | 2012-05-16 | 欣兴电子股份有限公司 | Package substrate and method for fabricating the same |
| CN107278040A (en) * | 2017-07-07 | 2017-10-20 | 山东科技大学 | A kind of method that circuit is manufactured in extending flexible substrates |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1173401C (en) * | 2001-06-08 | 2004-10-27 | 财团法人工业技术研究院 | Method for preparing metal bump with more than two layers formed by electroless plating |
| CN1211838C (en) * | 2002-06-18 | 2005-07-20 | 联华电子股份有限公司 | Method of making solder pads |
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2007
- 2007-07-11 CN CN2007101368788A patent/CN101346038B/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456649A (en) * | 2010-10-26 | 2012-05-16 | 欣兴电子股份有限公司 | Package substrate and method for fabricating the same |
| US9230895B2 (en) | 2010-10-26 | 2016-01-05 | Unimicron Technology Corporation | Package substrate and fabrication method thereof |
| CN107278040A (en) * | 2017-07-07 | 2017-10-20 | 山东科技大学 | A kind of method that circuit is manufactured in extending flexible substrates |
| CN107278040B (en) * | 2017-07-07 | 2019-05-07 | 山东科技大学 | A method of fabricating circuits on a stretchable flexible substrate |
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| Publication number | Publication date |
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| CN101346038B (en) | 2011-01-26 |
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