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CN101304012A - 具有金属接触层的功率半导体基片及其制造方法 - Google Patents

具有金属接触层的功率半导体基片及其制造方法 Download PDF

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Publication number
CN101304012A
CN101304012A CNA2008100967353A CN200810096735A CN101304012A CN 101304012 A CN101304012 A CN 101304012A CN A2008100967353 A CNA2008100967353 A CN A2008100967353A CN 200810096735 A CN200810096735 A CN 200810096735A CN 101304012 A CN101304012 A CN 101304012A
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Prior art keywords
power semiconductor
semiconductor substrate
contact
pressure
making surface
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CNA2008100967353A
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CN101304012B (zh
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C·格布尔
H·布拉姆尔
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Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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Semikron Elektronik GmbH and Co KG
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Abstract

本发明描述一种功率半导体基片，包括一绝缘的面状的基体、至少一个印制导线和至少一个作为该印制导线的部分的接触面，其中在该接触面上借助于金属材料的加压烧结连接设置一材料层。配属的方法具有以下主要的步骤：制造一功率半导体基片，其包括一面状的绝缘的基体、印制导线和接触面；将一由一金属材料和一溶剂制成的膏状层设置在功率半导体基片的至少一个接触面上；对膏状层施加压力。

Description

具有金属接触层的功率半导体基片及其制造方法
技术领域
本发明描述一种功率半导体基片，包括一绝缘的基体、至少一个印制导线和这样的印制导线的至少一个接触面。这样的功率半导体基片例如作为AMD(活性的金属铜焊)、DCB(直接的铜粘结)或IMS(绝缘的金属基片)基片是已知的。
背景技术
接触面，作为一印制导线的部分或部段，用作为例如与功率半导体构件或与外部的连接元件的导电连接。这些与接触面的连接元件可以例如借助于钎焊技术的连接或借助于压力接触的连接构成。特别在压力接触的连接中在这里利用接触弹簧的连接是特别有益的。
按照现有技术已知DCB基片，其包括一陶瓷的基体、常常是氧化铝或氮化铝，与在其上设置的由铜膜制成的印制导线。这些印制导线对于钎焊技术的连接是优选的并且此时构成接触面本身。同样已知若干或全部接触面构成有一附加的薄的金层、优选具有几个原子层的厚度。这特别对于金属丝粘结的接触面是有利的。在与压力接触的连接元件如功率半导体模块的辅助或负载连接元件的连接中，其按照现有技术可以构成为接触弹簧，这样的接触面是不够的。通过热负荷和施加压力接触弹簧的弹簧脚可能损坏薄的金层并从而降低接触可靠性。
发明内容
本发明的目的在于，特别为压力接触的应用提供一种具有接触面的改进的接触特性的功率半导体基片，并且说明一种用于这样的功率半导体基片的简单而便宜的制造方法。
按照本发明该目的这样达到，即借助于一种按权利要求5的方法制造一种具有权利要求1的特征的功率半导体构件。优选的实施形式描述于诸从属权利要求中。
本发明的出发点是一种功率半导体基片，其包括一绝缘的面状的基体、至少一个印制导线和至少一个作为该印制导线的部分的接触面。按照本发明在这里借助于一金属材料的加压烧结连接在该接触面上设置一优选至少10微米厚的材料层。其中所谓加压烧结连接在这里应被理解为，借助于以后所述的方法设置一材料层。
在这方面优选的是，第二金属材料具有一贵金属多于一90％的份量。在这方面特别优选的是，该贵金属是银。
此外可以优选在接触面与金属层之间设置一贵金属优选金的另一金属层，其设置具有一几个原子层的层厚度。
本发明用于制造一这样的功率半导体基片的方法具有下列主要的步骤：
-制造一功率半导体基片，其包括一面状的绝缘的基体、印制导线和这些印制导线的接触面；
-将一由金属材料和一溶剂制成的膏状的层设置在功率半导体基片的至少一个接触面上；
-对膏状层施加压力。此时优选在施压之前从膏状层中排除绝大部分的溶剂。
在这方面可以优选的是，借助于丝网印刷方法涂覆膏状层。在这种情况下一方面可以达到要求的层厚时的所需的定位精度。另一方面可便宜地实现该方法。
通过应用一压力机和两冲模可以提供一对膏状层施压的有利的实施形式。在这方面还优选的是，至少一个冲模构成有一在其上设置的产生近似静压压力的硅酮垫。
在这方面同样优选在功率半导体基片上设置一薄膜、优选一聚四氟乙烯薄膜，并紧接着对该结合施加压力。
附图说明
该功率半导体基片和制造方法的特别优选的进一步构成列举于各实施例的相应的描述中。并且借助图1至3的各实施例进一步说明本发明的方案。
图1和2示出本发明的第一功率半导体基片的按本发明的方法的各个步骤。
图3示出一具有一本发明的第二功率半导体基片的装置。
具体实施方式
图1和2示出本发明的第一功率半导体基片10的按本发明方法的各个步骤。图1中示出一在一已知的DCB基片的基础上的功率半导体基片10。该功率半导体基片具有一厚度为250μm至700μm由氧化铝构成的陶瓷的基体12和在该基体12的两主面140、160上设置的金属涂层14、16。这些涂层构成为厚度在200μm与500μm之间的铜膜。在基体12的第一主面140上的铜膜14构成为面状的并且用作为对一未示出冷却体的传热接触。在基体12的第二主面160上的铜膜16本身是结构化的并因此构成印制导线以及接触面162。
在其他优选的实施形式中，各印制导线在其延伸的一主要部分中还可以具有一覆盖层。各接触面162在这样的实施形式中没有覆盖层并因此可以连接于半导体构件、连接或接线元件。
按照本发明的方法，在一第一未详细示出的步骤中，优选借助于丝网印刷技术在一接触面162上或一印制导线的一部分上设置一膏状层20，如其由按现有技术的烧结连接已知的。在这方面特别优选的是，该膏状层的层厚为在10μm与200μm之间。
膏状层20本身包括一金属材料与一溶剂的混合物，该金属材料为具有一最大伸展在微米的数量级内的金属片的形式。银特别适于用作为金属片的材料，但其他的贵金属或包括一多于90％的贵金属份量的混合物也是适用的。
图2示出对膏状层20施加压力30用以构成一金属层。在该施加压力30之前有利的是从膏状层20中排除达至少95％的溶剂。这优选借助在功率半导体基片10上加热达到。在紧接着的施加压力(30)的过程中也将加热保持为至少350K或还要提高。
在这里附加示出并且也优选一薄膜40，例如一聚四氟乙烯膜，在施加压力30之前涂覆该薄膜。在这方面优选其覆盖整个的功率半导体基片10。当然在有些构成中能够按选择只用薄膜40覆盖相应的膏状层22。
为了在膏状层20与接触面162之间构成一足够粘附的连接优选的是，在施加压力30时最大的最终压力相当于至少8MPa。
图3示出一具有本发明的第二功率半导体基片10、一功率半导体构件50和一接触弹簧60的装置。功率半导体基片10再次如图1中所述是一DCB基片。在该基片的一印制导线16上设置一功率半导体构件50，在这里为一功率二极管并且以钎焊技术连接于印制导线16，其中在这里该连接方案不应被理解为限制。
功率二极管50还借助于一同样非限定的金属丝粘结50连接于一第二印制导线16。该第二印制导线在接触面162的区域内具有一薄的厚度在几个原子层的范围内的金层18以便改进对粘结金属丝52的电接触。按照本发明在金层18上按上述方法设置一金属层20。该层20是一银层并且具有一大于10μm的厚度。其他的材料、优选包括一贵金属多于90％的份量，同样是适用的。
同样示出一接触弹簧60，如其对于压力接触的连接元件是已知的。其接触脚62连接于金属层20并且构成一向外例如从一功率半导体模块引出的连接元件的触点。
本发明的功率半导体基片10的一个优点是，通过金属层20大于10μm、优选大于50μm的厚度构成一凸出的接触面，以便与压力接触的接触弹簧60相组合构成持久的和在定性上很高级的连接。
按照本发明的制造关于需要的材料，同样关于一加压烧结连接需要的设备符合现有技术。因此这样的功率半导体基片的特别有利的制造是可能的，因为这是简单而便宜的。

Claims (10)

1.功率半导体基片(10)，包括一绝缘的面状的基体(12)、至少一个印制导线(16)和至少一个作为该印制导线(16)的部分的接触面(162)，其中，在该接触面(162)上借助于金属材料的加压烧结连接设置一材料层(20)。
2.按照权利要求1所述的功率半导体构件，其特征在于，金属材料具有一至少10微米的层厚和一贵金属多于90％的份量。
3.按照权利要求2所述的功率半导体构件，其特征在于，贵金属是银。
4.按照权利要求1所述的功率半导体构件，其特征在于，在接触面(162)与金属层(20)之间设置一贵金属的另一金属层(18)，所述另一金属层(18)具有几个原子层的层厚度。
5.用于制造一按照权利要求1所述的功率半导体基片(10)的方法，包括下列主要的步骤：
制造一功率半导体基片，该功率半导体基片包括一面状的绝缘的基体(12)、印制导线(16)和作为这些印制导线(16)的部分的接触面(162)；
将由一金属材料和一溶剂制成的膏状层(20)设置在功率半导体基片(10)的至少一个接触面(162)上；
对膏状层(20)施加压力(30)。
6.按照权利要求5所述的方法，其特征在于，借助于一丝网印刷方法涂覆膏状层(20)。
7.按照权利要求5所述的方法，其特征在于，借助一压力机和两冲模施加压力(30)，其中至少一个冲模构成有一在其上设置的产生近似静压压力的硅酮垫。
8.按照权利要求5所述的方法，其特征在于，在施加压力(30)时的最大的最终压力相当于至少8MPa。
9.按照权利要求5所述的方法，其特征在于，在施加压力(30)的过程中将功率半导体基片(10)加热到大于350K。
10.按照权利要求5所述的方法，其特征在于，在施加压力(30)之前用一薄膜(40)覆盖功率半导体基片(10)。
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DE102005047566C5 (de) * 2005-10-05 2011-06-09 Semikron Elektronik Gmbh & Co. Kg Anordnung mit einem Leistungshalbleiterbauelement und mit einem Gehäuse sowie Herstellungsverfahren hierzu

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CN101304012B (zh) 2013-03-13
EP1993132B1 (de) 2018-07-11
US9768036B2 (en) 2017-09-19
EP1993132A3 (de) 2010-09-08
JP2008283183A (ja) 2008-11-20
EP1993132A2 (de) 2008-11-19
JP5119039B2 (ja) 2013-01-16
DE102007022336A1 (de) 2008-11-20
US20090008784A1 (en) 2009-01-08

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