CN101245449A - Plasma case for thin film production in enormous quantities - Google Patents
Plasma case for thin film production in enormous quantities Download PDFInfo
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- CN101245449A CN101245449A CNA2007100050890A CN200710005089A CN101245449A CN 101245449 A CN101245449 A CN 101245449A CN A2007100050890 A CNA2007100050890 A CN A2007100050890A CN 200710005089 A CN200710005089 A CN 200710005089A CN 101245449 A CN101245449 A CN 101245449A
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Abstract
The invention discloses a plasma enhanced chemical vapor deposition (PECVD) device and a method which are used for simultaneously coating films on a plurality of large-area base plates. A plurality of large-area base plates are arranged in rectangle plasma chambers comprising a plurality of parallel exciting electrodes and grounding electrodes at intervals and in staggered arrangement. A plurality of plasma regions are uniformly formed among all adjacent and opposite electrodes. The large-area electrode surfaces of all plasma chambers are used in a great quantity of the same, fixed and grouped film coatings of the PECVD system of a single vacuum chamber.
Description
Technical field
The invention discloses a kind of vacuum coating film equipment, specially refer to the PECVD equipment and the method for on a kind of large-area substrates, producing the batch processing formula of low cost, high yield film.
Background technology
Traditional plasma enhanced chemical vapor deposition (PECVD) system is designed to, importing electric energy in the glow discharge structure of pair of parallel electrode with capacity coupled mode, each exciting electrode (power electrode, the energy supply electrode also claims negative electrode or negative pole) all provide one and have only a corresponding coated surface usually.What Fig. 8 showed is exactly parallel pole glow discharge (PECVD) depositing device of this quasi-tradition.With Fig. 8 is example: among the vacuum chamber 40 of PECVD system, be equipped with two flat opposite polarity electrodes, be respectively exciting electrode 48 and ground-electrode 47, these two parallel poles keep a suitable distance (usually between 1-5 centimetre), and the zone 45 between them is that exciting of plasma body forms the district.Inlet mouth 41 and air outlet 42 are utilized for plasma slab respectively and source gas are provided and discharge reacted gas.A substrate 43 that is used to plated film is placed on the electrode, is the surface of ground-electrode 47, and its back side is equipped with a well heater 44.If use direct current glow discharge (DC glow-discharge) plated film, substrate partially conductive at least then.When using the alternating-current that more widely adopts to come activated plasma, for example radio frequency (RF) excites, and it is the capacitance coupling plasma method that the parallel pole plate structure is construed to.When the source air flow line was side path, insulated substrate can be placed on one or two electrode.But, for large-area coating film, traditional parallel pole plasma reactor once can only be handled a substrate that is placed on the ground-electrode, because as shown in Figure 8, shower plate 49 (shower nozzle) is placed on the back of a porous exciting electrode 48 usually and comes the reactant gases of uniform distribution introducing, sometimes also have the opening box 46 that exciting electrode is placed in one, control plasma body zone and source gas flow.The notion that places the sealing plasma reactor in the sealed vacuum chamber that this opening box 46 and Ya Keshimite propose in U.S. Patent number is 4798739 and 4989543 patent is similar.
Some big area or huge film light electronics device, flat-panel monitor for example, in bunch shape PECVD equipment that single substrate CVD (Chemical Vapor Deposition) chamber constitutes with several, form at present, (see U.S. Patent number 6444277,6338874,6468601,6352910 and 5788778 as the equipment that provides by Applied Materials, three patents in back have been transferred to AKT company), perhaps use a plurality of reaction boxs of folded system type of multicell structure, as the equipment of making by Unaxis Balzers company (seeing U.S. Patent number 6673255,6296735 and 5515986).Many Japanese firms produce amorphous silicon thin-film solar cell with extremely complicated concatenation type multicell apparatus for plasma chemical vapor deposition on the large-area glass substrate.In all above-mentioned situations, in any reaction box of giving giving in the time with an exciting electrode that can produce the plasma body zone, and only be a large-area substrates plated film at every turn.Move equipment that a plurality of independent plasma reactors (be not the present invention will set forth set up a plurality of plasma bodys zone in single reactor) make Unaxis plated film on a plurality of substrates simultaneously.These commercial PECVD systems that are applied to large-area coating film itself are very complicated, account for volume greatly and very expensive.They are not suitable for extensive thin-film device low cost, the high yield production of (as based on the silicon hydride photovoltaic module).The production cost key that reduces thin film semiconductor's photoelectric device be to develop simple, flexibly and effective means make big area, evenly, the vacuum coating technology of reliable, low-cost, high yield.Compared with common line style or bunch shape equipment, these advantages are just in time provided according to batch processing of the present invention.
" carrier case " notion that Zoltan doctor J.Kiss proposes in U.S. Patent number 4576830 can be given four substrate film coatings simultaneously, plated film carries out in by an exciting electrode and two movably carrier casees that constitute as the ground-electrode of carrier case sidewall, and the carrier case is placed on than in its bigger vacuum chamber.Though this method provides very high internal electrode surf zone utilization ratio, the quantity of substrate in each carrier case of necessary increase, thereby the productivity of raising PECVD system.A plurality of carrier casees are arranged in order has expanded the above-mentioned carrier case notion of being made up of a radio-frequency drive electrode, and each carrier case has deposition space and the shower plate (Dae-Won Kim, U.S. Patent number are 6079358) of oneself.This design is quite complicated, it require substrate regularly before and after each deposition process by single shift-in or shift out reactor.Disclosing of other background technology comprises the PECVD equipment (U.S. Patent number is 7047903) that is used for a plurality of extremely-high frequency exciting electrodes of use of while deposit film on a plurality of silicon chips are two-sided, be connected on the common power with multisection electrodes, deposit film (A.Sherman on a plurality of silicon chips, Thin SolidFilms Vol.113, p.135,1984), give many vertical little substrate film coatings (U.S. Patent number is 4987004) that are placed between two parallel electrode plates simultaneously.These PECVD DESIGN OF REACTOR are applicable to handles the relatively little substrate (major part is used for the silicon chip of microelectronic circuit, for example computer chip) of limiting the quantity of, and is not suitable for the PECVD process on the large-area substrates.Therefore, but necessary seek a kind of be suitable for a plurality of large-area substrates simultaneously plated films low cost, high yield, have the filming equipment that the maximum coated surface is amassed for promptly deciding the vacuum chamber volume.
Summary of the invention
Based on above-mentioned consideration, the applicant has worked out primary and foremost purpose of the present invention: a PECVD filming equipment is provided, with it can with many huge substrates simultaneously one be placed in the vacuum chamber, plated film in the reactor of fixing, relative compact separately.
Another object of the present invention is that the big area PECVD coating system of a high yield is provided.
Further purpose of the present invention is, a plasma apparatus is provided, and the crossed contamination of coating film area has therein reduced, non-doping type and doping type semiconductor film, for example hydrogenated silicon film by utilizing can use a plasma case deposition that fixed is identical in single vacuum chamber.
In order to achieve the above object, the invention a kind of high yield equipment and method of giving the large-area substrates plated film, according to the present invention, batch methode (batch-type) the PECVD reactor of operating in a bigger vacuum chamber (being designated hereinafter simply as plasma case) is designed to comprise the pattern of a plurality of parallel exciting electrodes and ground-electrode in single plasma case.Each exciting electrode is by a special power supply independence energy supply.Plasma case of the present invention generates the actual bodies of plasma body again both as the Supporting Media of substrate for the material deposition.Each exciting electrode can be used for simultaneously to the 4 piece substrate film coatings close with electrode area.Exciting electrode can be by producing same ideal plated film result simultaneously or separately or with the energy supply of arbitrary combination mode.Can be for the 4N substrate that the plasma case that contains N (N=2,3,4,5,6...12...16...) exciting electrode is close with electrode area by the while plated film in an independent plasma case.
Plasma case of the present invention is a case shape plasma reactor that is placed in the bigger vacuum chamber.Plasma case mainly is made of a plurality of, vertical placement, parallel to each other, equally spaced rectangular electrode plate.The rectangular electrode plate by exciting electrode and ground-electrode (positive-negative electrode plate), one be assemblied in shower plate on such battery lead plate, support component and roller to form perpendicular to other of the front and back door (terminal plate washer) of battery lead plate and electrode array bottom.Isolator is used to disconnect the electric power of other parts in exciting electrode and the plasma case and gets in touch, and the bottom of plasma case is an opening.Ground-electrode big or small identical, greater than 0.6 square metre (6000 square centimeters), exciting electrode big or small identical, greater than 0.5 square metre, each is all independent to be connected with a corresponding impedance matching box with an external power supply unit.Large-area substrates is placed on each surface of all comparative electrodes in the plasma case.Use high frequency PECVD coating process, can on all substrates, finish simultaneously by a best batch processing mode.In addition, independent exciting electrode can pass through array configuration arbitrarily, gives a plurality of substrate film coatings simultaneously.
Two plasma body zones of any exciting electrode both sides are plated film on 4 substrates close with electrode area simultaneously uniformly.Therefore, that can be handled simultaneously, similar to electrode size substrate sum is 4 times of exciting electrode quantity in the plasma case.For example, if placed 8 exciting electrodes in the plasma case, so at most can while plated film on 32 substrates.
When all electrode flat surfaces are covered by substrate, the pollution of impurity gas can significantly reduce, thereby the preparation of the photoelectric device of being made up of adulterated and non-adulterated film that forms in succession in plasma case is become a reality.Equipment of being invented and method have simply, the characteristics of multifunctionality, large vol, high yield, so be highly suitable for the large area film device, comprise the low-cost industrialization production of photovoltaic module, big area transmitter, detector and flat-panel monitor.The plasma case technology with extremely complicated, expensive, be difficult to Operation and maintenance, and big multicell bunch shape of floor space or line style production unit formation sharp contrast.
Thereby the feature of the inventive method is to use high excitation frequency that electric energy is imported with capacity coupled mode and forms PECVD in the parallel pole.Equipment of the present invention and method are used for simultaneously being placed on mass substrate in the single reaction box of vacuum chamber with Cement Composite Treated by Plasma, and the single reaction box of this vacuum chamber is applicable to that commercialization produces large-area coating film and device in batches.
Because the simpler design of vacuum chamber space and plasma case, effectively utilize, the minimizing of high yield and clearance time has significantly reduced depreciable cost, the plasma case technology that is used for the scale operation thin-film device among the present invention has improved productivity, has also significantly reduced equipment cost.These cost advantages have competitive power for thin-film device on market quite important.Other advantages and the performance of plasma case are described in embodiment.
According to the present invention, plasma case can be before or after each coating process moves with the substrate that is placed in wherein, and plasma case equally can be at whole coating process, and front and back are maintained fixed in vacuum chamber.In a back operator scheme, have only substrate after each coating process, to be replaced.No matter use any operator scheme, identical all the time at the actual PECVD coating process in plasma body zone.
The vacuum chamber per unit volume that is designed to rule of plasma case provides maximum plated film area.Than other all types of PECVD reactors, this is an Inherent advantage of plasma case technology.
Because except the lower hollow part, plasma case has goodish stopping property, if it is enough high to enter the source gas flow ratio of plasma case, the plasma body zone is not subjected to that the vacuum chamber inwall is discharged or from the influence of a small amount of gas of reaction chamber seepage.The conventional cleaning requirement that plated film advantage is an article on plasma precursor reactant device according to the present invention is lower.A large amount of internal electrodes surface of plasma case is covered by substrate, because the new in batch substrate of substrate quilt after each coating process replaces, plasma case can avoid large area film to form at electrode surface, and makes particulate and dust drop on the substrate, reduces the quality of plated film.Because do not need frequent cleaning, plasma case becomes attracting more time saving and energy saving means of production.
Another advantage of making the film photoelectric device of the plasma case method is that it can fully stop the crossed contamination between the adulterated and non-adulterated semiconductor layer of sedimentary in succession difference in identical plasma case.For example, high performance p-i-n type amorphous silicon hydride can not need the interlayer cleaning to be formed (single chamber operation) continuously in identical vacuum chamber with the nanocrystal silicon photovoltaic device.If the conventional P ECVD system that uses Fig. 8 to show, at dopant deposition film (p layer or n layer) afterwards and the non-crystalline silicon of sedimentary " non-doping " (i layer) tends to occur serious cross-contamination issue.Therefore,, need multi-chamber system to come special disposal to mix and non-doping film, make equipment cost high, complicated operation with conventional P ECVD reactor.
The PECVD reactor of use plasma case relatively simply designs is more convenient for assembling, operate, pinpoint the problems and keeping in repair.So its production and maintenance cost are lower than conventional P ECVD equipment that can only plated film small area substrate.
Plasma case technology of the present invention provides produces the superior controlled and repeated of large area film device to continuous, high yield.A reason is the fault-tolerance of a plurality of parallel pole structures.Each exciting electrode does not conflict mutually by one or complementary impedance matching box and power source special provide energy.When circuit occurred as problem of short-circuit, other circuit (other exciting electrode) of all in the plasma case was unaffected, and plasma coating still can go on other circuit.The fault tolerance of plasma case and line style production unit form sharp contrast: when any one plasma reactor or coating chamber break down (perhaps power transmission or mechanical transfer mechanism or as substrate breakage waits other faults), whole production line must stop to solve up to problem.In other words, the line style production unit just can't move in case any chain link goes wrong just as chain.
Another advantage of plasma case is very high to the utilization ratio of source gas, because compare with a plasma reactor that is not used as substrate holder in traditional two electrodes, the contiguous electrode surface in most of and plasma body zone is covered by substrate.
Being used for the PECVD plasma case, to also have an advantage be that design flexibility is big, only suitably increases a vacuum chamber easily and just can make bigger plasma case and increase productivity.For example, the quantity of exciting electrode is increased by 16 from 8, can be multiplied by the number of substrates of plated film simultaneously, required vacuum chamber only needs width is increased about 30% simultaneously.Comparatively speaking, be multiplied in order to make throughput, the line style production system needs double length, the perhaps vacuum chamber quantity of double a series of connections, and this has inevitably increased production cost and complicacy greatly, and whole production line is easier breaks down.
Generally speaking, except simple, low-cost, take up an area of little, easy handling and characteristic of low maintenance cost, the advantage of plasma box PECVD system also comprises: high electrode utilization ratio, because fault-tolerance, high source gas effciency and the low crossed contamination situation that the zone parallel processing of a plurality of independence energy supply plasma bodys are had.Can improve non-crystalline silicon and the low plated film rate of nanocrystal silicon and the present situation of device quality difference that is used for thin-film solar cells well with the plasma case parallel processing.The process of PECVD in batch based on plasma case makes the production cost of the uniform thin-film device of low temperature making big area thickness drop to minimum level.
Description of drawings
The present invention will be further described below in conjunction with drawings and Examples.
Fig. 1 has shown the arrangement mode of a plurality of electrodes.
Fig. 2 has shown the battery lead plate that is arranged in parallel and gas distribution shower plate placed on it.
Fig. 3 has shown a plasma case that adds lower support structure on Fig. 2 architecture basics.
Fig. 4 has shown by the modes of emplacement of coated basal plate in plasma case shown in Figure 3.
Fig. 5 has shown that a smooth hard substrate can be attached to side elevational view on the battery lead plate with insulating support.
Fig. 6 has shown the front and back door of plasma case and the Rankine-Hugoniot relations of rectangular electrodes plate.
Fig. 7 has shown a sectional view that uses the PECVD system of plasma case.
Fig. 8 has shown a traditional PECVD system with pair of parallel electrode.
Embodiment
Fig. 1 to Fig. 7 has shown the structure and the operation of plasma case 20.
As shown in Figure 1, a plurality of smooth rectangular metal plate 77,77A with 88 with the identical distance distance by parallel placement.These metal sheets are preferably perpendicular to ground, so that load and unload substrate neatly and reduce the particulate that drops on the substrate.Interelectrode distance value is in the 0.6-5 cm range.Each battery lead plate has two flat surfaces parallel to each other.Just all electrode 77,77A and 88 have uniform plate thickness.Grounding electrode plate 77 all has the identical size that is not less than 0.6 square metre (6000 square centimeters).Outmost two ground-electrode 77A are used to form two sidewalls of plasma case shown in Figure 3 20.All exciting electrode 88 sizes are identical, can be with ground-electrode 77 big or small close, but preferably appropriate less than ground-electrode 77.In any case the area of exciting electrode 88 is greater than 0.5 square metre.For example, the planar dimension of ground-electrode 77 is 1.2m * 0.75m (0.9m
2), the size of exciting electrode 88 is 1.2m * 0.70m (0.84m
2).Show that as Fig. 1 ground-electrode (positive electrode) 77 is connected with the common grounding terminals with 77A, when low pressure glow discharge was operated, exciting electrode (negative potential) 88 was connected with the terminal of high frequency energy supply power supply.According to the present invention, ground-electrode 77 (comprising 77A) and exciting electrode 88 are alternately arranged, and each all is clipped between two opposite electrode plates.Glow discharge plasma in the film deposition process is present in the zone 31 between any two adjacent electrodes.The quantity N of exciting electrode can be any greater than 1 integer, N=2 just, 3,4...8...12...16 or the like.The quantity of the ground-electrode 77 of plasma case 20 inside is N-1.Therefore, comprise two lateral electrode 77A, the sum of ground-electrode with plasma case of N exciting electrode is N+1.For convenience of explanation, Fig. 4 and Fig. 7 have shown a plasma case 20 that has only four exciting electrodes 88.In practice, a large amount of exciting electrodes help improving PECVD equipment large-area substrates (〉=0.5m
2) productivity of plated film.
Fig. 2 has shown one a group of battery lead plate and a shower plate 50 placed on it as shown in Figure 1.Shower plate 50 is used as the lid that binds of plasma case 20, and is the gaseous feed that plasma-deposited each regional 31 homodisperse between battery lead plate are introduced.The gaseous mixture of outside supply is introduced into shower plate by inlet mouth 53, and by be parallel to battery lead plate 77A, many rows aperture 55 of 77 and 88 enters into plasma case 20.Ground connection and power supply symbol have shown the alternate cycle placement of electrode.The arrow of Fig. 2 has shown flow pattern.The long limit of rectangular electrodes is parallel to the Porous Base of shower plate 50.Exciting electrode 88 and shower plate 50 are isolated by the isolator 61 at top.The bottom of electrode 88 is supported (as shown in Figure 3) by isolator 62 by lower support structure 90, and conductively-closed cable 86 is connected on the external power supply 89 (Fig. 7) of the vacuum chamber 10 of placing plasma case 20.Because evenly plated film requires electrode area greater than 0.5 square metre (5000 square centimeters), so the design of exciting electrode 88 can be so that high frequency power uniform distribution in entire electrode gap area 31 on large-area substrates.
Fig. 3 has shown a plasma case 20 that adds lower support structure 90 on Fig. 2 architecture basics.Lower support structure 90 is made of a plurality of metal spreaders and the assembly that is used for fixing battery lead plate, comprises the isolator 62 that is inserted between bottom construction 90 and the exciting electrode 88.Lower support structure 90 provides many unrestriced holes 91, makes the gaseous mixture that flows downward be easy to flow out plasma case 20 in PECVD or plasma etching process.Other component of forming lower support structure 90 for example can allow supporting structure 90 firmly invest the support of sidewall 77A, move wheel, or supporting structure do not show here.Mobile wheel can be so that advance or pull out vacuum chamber 10 (Fig. 7) with plasma case 20.Gap 31 between the comparative electrode plate is the plasma body zones that formed the plated film reaction by source gaseous mixture plasma exciatiaon.
As shown in Figure 1, exciting electrode 88 cans be compared to ground-electrode 77 narrower a little (vertical direction is short) most, like this can be by bigger ground- electrode 77 and 77A shielding from the high-frequency electrical radiation of exciting electrode 88.Because outside ground plate 77A is also as the sidewall of plasma case 20, they are bigger a little than being placed on 20 li ground-electrodes 77 of plasma case.
Fig. 4 has shown by the modes of emplacement of coated basal plate in plasma case shown in Figure 3 20.The outside of sidewall 77A is not used in Cement Composite Treated by Plasma.The big or small maximum of substrate 3 (〉=0.5 square metre) can only be slightly less than the size of battery lead plate 88.Because high frequency plasma can exist in each adjacent electrode 77 (comprising 77A) and the plasma body zone 31 between 88, each and plasma body electrodes in contact surface may be used to plated film in the plasma case 20.As Fig. 4 and shown in Figure 7, each electrode surface can be placed a substrate 3, that is to say that each battery lead plate all adheres to two substrates.Like this, each exciting electrode 88 that is placed in the plasma case 20 can be four almost substrate while plated films of equal size.For example, the plasma case that contains 8 exciting electrodes can be 32 more a little bit smaller than electrode a little substrate film coatings simultaneously.A major advantage of the present invention is exactly high electrode surface utilization ratio.Can place the big plasma case 20 of many electrodes 88 and 77 by building, can from single PECVD system, obtain very high plated film productivity.
Fig. 5 has shown that one is attached to method on battery lead plate 77 and 88 with isolator 66 and 67 with flat substrate 3.Have good symmetry in order to make plasma body be attached to two substrates 3 on the opposite electrode with respect to all, all substrate 3 and electrodes 77 and 88 are electrical isolations.This suspension board is not suitable for direct current glow discharge.For high frequency plasma, substrate 3 can be the sheet material that there is conductive film on isolator, conductor, semi-conductor or surface.In order to reach substrate 3 surperficial optimal plasma body symmetry, be placed on the insulating material that substrate 3 on the opposite electrode 77A, 77 and 88 is preferably hard, smooth, have uniform thickness, for example, the large-area glass plates that can contain conductive film is one of best substrate that is used for the present invention's practice.
Fig. 6 has shown the Qianmen 76 (or back door) of plasma case 20 and the Rankine-Hugoniot relations of rectangular electrodes plate.Before and after door 76 (having only one is presented among Fig. 6) be placed on a side of battery lead plate 77A, 77 and 88 terminals, usually and the Surface Vertical of these electrodes.It is isolated with battery lead plate 77 and 88 that Qianmen 76 is insulated plate 63.All ground-electrodes 77 and exciting electrode 88 are arranged in regular turn along shower plate 50 and the front and back door 76 that is placed on the electrode two ends.The shower plate 50 of plasma case 20, outside ground-electrode 77A closely are connected with front and back door 76, and the gaseous mixture that is used for plasma coating like this is not easy to overflow from the side seam of plasma case 20.
Fig. 7 has shown a sectional view that uses the PECVD system of plasma case.The plasma case 20 that has loaded substrate 3 is placed in the vacuum chamber 10, and vacuum chamber 10 is connected with vacuum pump with the pipeline that vacuumizes by venting port 16.The inlet mouth 53A that is installed on the reaction chamber 10 is connected to inlet mouth 53 on the plasma case 20 by a corrugated tube.The source gaseous mixture is introduced in the plasma case 20 by 53A and 53.Gaseous mixture flows down from the qi-emitting hole 55 on the shower plate, and the gap area 31 between substrate 3 flows, and flows out by plasma case 20 lower hollow parts 91.16 discharge from plasma reaction district effluent air from venting port.Electric heater is added in the surface of vacuum chamber 10, to improve or to keep the selected temperature of whole vacuum chamber 10 and plasma case 20.Each exciting electrode 88 independently can be that the AC power 89 of radio frequency, extremely-high frequency or intermediate frequency couples together by cable 86 and one.A plurality of exciting electrodes 88 also can a shared power supply 89, but this way will not be recommended.Shower plate 50, ground- electrode 77 and 77A, front and back door 76 and lower support structure 90 keep identical ground potential (same equi-potential) with vacuum chamber 10.Substrate 3 has other component insulation of suspension electromotive force and plasma case 20.In coating process, in plasma body zone 31,, comprise the plated film time and keep glow discharge from 89 power that transmit according to predetermined set.
Claims (10)
1. a plasma case is used for forming low pressure glow discharge simultaneously in a plurality of zones of closely facing mutually, it is characterized in that: by forming with the lower section:
A) a plurality of ground-electrodes have two smooth surfaces parallel to each other, and surface-area is not less than 0.6 square metre, be installed in the described plasma case, and any two adjacent electrodes have identical preset distance;
B) a plurality of exciting electrodes have two smooth surfaces parallel to each other, and surface-area is not less than 0.5 square metre, be installed in the described plasma case, and with the insulation of the other parts of described plasma case.Described a plurality of ground-electrode is alternately placed by parallel with described a plurality of exciting electrodes, and the preset distance that equates with the adjacent electrode maintenance;
C) a plurality of being connected on the described exciting electrode, and be the conductively-closed cable of described exciting electrode independence energy supply;
D) a pair of outer wall is made up of outermost described ground-electrode;
E) a pair of front and back door has two smooth surfaces parallel to each other, is connected with described a pair of outer wall vertical;
F) shower plate, vertically link to each other with described a plurality of ground-electrodes, described a plurality of exciting electrodes, described a pair of outer wall and described a pair of back door, its effect is that the source gaseous mixture is incorporated in the plasma body zone between described a plurality of ground-electrode and a plurality of exciting electrode;
G) lower support structure, it is made up of a plurality of metal columns and other integral part, be used to support and the other parts of fixing described plasma case, can be somewhere or described plasma case is installed on other object by it, and described plasma case can be moved;
H) a plurality of described lower support structure, the hollow spaces that the exhaust-gas mixture that passes through described plasma body zone can be got rid of of passing;
I) by electrical ground and be electrically connected, described a plurality of ground-electrodes, described a pair of outer wall, described a pair of front and back door, described shower plate and described lower support structure are maintained on the equal ground potential;
J) substrate that will be used for plated film is fixed on the means of described a plurality of ground-electrode, a plurality of exciting electrode and a pair of outer wall surface;
K) be kept for the means of the substrate and the described plasma case other parts electrical isolation of plated film.
2. PECVD system is characterized in that: is one and on a lot of large-scale planar substrates, forms the equipment of thin-film material simultaneously by the plasma enhanced chemical vapor deposition process, by forming with the lower section:
A) vacuum chamber has good sealing property;
B) the described vacuum chamber of heating is to the pyritous method;
C) vacuum obtains and air pressure is kept system, comprises vacuum pump, pump-line, separation valve door and a vacuum suction and keeps the throttling valve of described vacuum chamber low pressure;
D) plasma case according to claim 1 is placed in the described vacuum chamber;
E) a plurality of high frequency electric sources and a plurality of high-frequency resistance matching box, via the conductively-closed cable, be connected by a plurality of exciting electrodes in the described plasma case of described vacuum chamber and claim 1, so that be described a plurality of exciting electrode energy supply, and form plasma body glow discharge in the zone between adjacent electrode;
F) in described plasma case, introduce the means of source gas mixture for the PECVD process with accurate flow;
G) handle from the method for the waste gas of described vacuum chamber eliminating;
H) complete required means of PECVD system of all other operations comprise measuring cell, temperature sensor, safety and environment monitoring device and computer control and automatization.
3. membrane deposition method, it is characterized in that: this method is to implement in the described PECVD of claim 2 system, is forming thin-film material simultaneously on a lot of large-scale planar substrates, and is being made up of following steps:
A) provide a plurality of be placed in the described plasma case, be not less than 0.5 square metre flat substrate;
B) provide the method for preheating with the described substrate of heating;
C) create a vacuum environment by all air of extracting described vacuum chamber out;
D) provide a kind of specified source gas mixture for described plasma case;
E) provide high frequency power to be described a plurality of exciting electrode energy supplies simultaneously, and film is grown on a plurality of substrates simultaneously in the formation glow discharge of described plasma body zone;
F) exhaust-gas mixture is discharged from described vacuum chamber.
4. plasma case according to claim 1 is characterized in that: described a plurality of exciting electrodes have comprised in order to obtain penetrating type hole, slit and other hollow space that specific plated film effect is settled.
5. plasma case according to claim 1 is characterized in that: it is used to the plasma etching process.
6. membrane deposition method according to claim 3, it is characterized in that: sedimentary film is a semiconductor film, comprises various doping and non-adulterated hydrogenated silicon film by utilizing and its alloy.
7. membrane deposition method according to claim 3 is characterized in that: described substrate is made up of sedimentary transparent conductive oxide on smooth sheet glass and its.
8. membrane deposition method according to claim 3 is characterized in that: the mode of excitation of plasma body comprises intermediate frequency, radio frequency and extremely-high frequency.
9. plasma case according to claim 1 is characterized in that: the quantity of described a plurality of exciting electrodes is no less than 8.
10. plasma case according to claim 1 is characterized in that: the area of described a plurality of ground-electrodes and described a plurality of exciting electrodes is greater than 2 square metres.
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| CN101845620B (en) * | 2009-03-27 | 2012-07-18 | 亚洲太阳科技有限公司 | Pulse heating multi-box type chemical vapor deposition p-i-n film coating device |
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