CN101228631A

CN101228631A - Solid imaging element and manufacturing method thereof

Info

Publication number: CN101228631A
Application number: CNA2006800266259A
Authority: CN
Inventors: 岩渊信; 元吉真
Original assignee: Sony Corp
Current assignee: Sony Corp
Priority date: 2005-06-02
Filing date: 2006-06-01
Publication date: 2008-07-23

Abstract

A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.

Description

Semiconductor image sensor module and manufacture method thereof

Technical field

The present invention relates to semiconductor image sensor module and manufacture method thereof.Relate to more in detail and for example answer the fix semiconductor image sensor module of high speed shading simultaneously of shutter speeds such as mobile phone of picture camera, video camera or band camera of logarithmic code.

Background technology

Cmos image sensor and ccd image sensor comparison are because single, the low power consumption of power supply and utilize standard CMOS just to handle and can make, so the advantage of easy realization SOC (system on a chip) is arranged.In recent years, cmos image sensor utilizes this advantage and can be used senior single-lens reflex number and fixes in picture camera, the mobile phone.

Figure 54 and Figure 55 have represented the simplification structure of ccd image sensor and cmos image sensor respectively.

Shown in Figure 54, ccd image sensor 1 in camera watch region 2 become pixel a plurality of be subjected to optical sensor (photo-electric conversion element) 3 regularly for example assortment become two-way array row shape, and dispose the CCD structure vertical transfer registers 4 that transmits signal charge to vertical direction with respectively being subjected to optical sensor to be listed as corresponding, and dispose and be connected with each vertical transfer registers 4 and transmit the CCD structure level transfer register 5 of signal charge to horizontal direction, be connected with the efferent 6 that changes charge voltage and output in these horizontal transmission register 5 terminals.In this ccd image sensor 1 light that is subjected to light at camera watch region 2 is also put aside by respectively being subjected to optical sensor 3 to convert signal charge to, respectively be subjected to the signal charge of optical sensor 3 to read and transmit to vertical transfer registers 4 to vertical direction via reading grid portion 7 this.The signal charge of being read by horizontal transmission register 5 by each line from vertical transfer registers 4 transmits and is converted to voltage signal and exported as image pickup signal by efferent 6 to horizontal direction.

Shown in Figure 55, cmos image sensor 11 includes on the other hand: assortment has camera watch region 13, control circuit 14, vertical drive circuit 15, row portion 16, horizontal drive circuit 17, the output circuit 18 of a plurality of pixels 12 in camera watch region 12.A plurality of pixel 12 two-dimentional regular assortments, for example assortment becomes two-dimensional matrix row shape in camera watch region 12.Each pixel 12 is formed by photo-electric conversion element (for example photodiode) and a plurality of MOS transistor.Control circuit 14 is accepted the data of input clock pulse and instruction pattern etc., and output comprises the data of image sensor information.

This cmos image sensor 11 is by selecting the row of pixel 12 from the driving pulse of vertical drive circuit 15, the output of the pixel 12 of selected row is to send to row portion 16 by vertical selection wire 21.The corresponding assortment of row of column signal treatment circuit 19 and pixel 12 is arranged in the row portion 16, accept a row part pixel 12 signal and this signal carried out processing such as CDS (Correlated DoubleSampling: fixed pattern noise is removed processings), signal amplification and mould/number (AD) conversion.Come selective sequential column signal treatment circuit 19 by horizontal drive circuit 17, its signal to horizontal signal lines 20 guiding, is exported as image pickup signal by output circuit 18.

Figure 56 A, Figure 56 B represent the savings sequential chart of the pixel column that ccd image sensor 1 and cmos image sensor 11 are corresponding with each scan line.The situation of ccd image sensor 1 is, during identical in signal charge respectively be subjected to optical sensor 3 savings, all pixels are reading to vertical transfer registers 4 simultaneously from the signal charge that is subjected to optical sensor 3.Promptly shown in Figure 56 A, the pixel that is all row during the savings of certain picture is with putting aside constantly.Like this, the simultaneity that can obtain putting aside, electronics shading simultaneously.

Relatively the situation of cmos image sensor 11 is, according to basic manner of execution and the pixel 12 of output signal just begins to put aside once more the signal of opto-electronic conversion from this moment point, therefore shown in Figure 56 B, during with certain picture, see, stagger during then putting aside along with scanning sequence.Like this, then the simultaneity that can not obtain putting aside can not obtain electronics shading simultaneously.Be cmos image sensor 11 since not as ccd image sensor transmitting the vertical transfer registers that sequential staggers, so the savings time of pixel is regulated by reset timing, and be adjusted to the sequential that data are sent to the column signal treatment circuit.Therefore, need stagger, can not when all pixels being carried out the electric charge savings with same sequential, carry out shadingization (with reference to 179 pages of non-patent literature 1) during the signal charge savings.

Particularly when carrying out the photography of live image, should difference just display with high speed.Document image when Figure 57 A, Figure 57 B represent with ccd image sensor and cmos image sensor with the paddle of high-speed record rotation.From recognizing with figure, by the paddle 25 of ccd image sensor record by normal recordings, and by the paddle 25 of cmos image sensor record be recorded warpage (with reference to 180 pages of non-patent literature 1).

Non-patent literature 1:CQ publishes Co., Ltd.'s distribution on August 10th, 2003,179～180 pages of Mi Ben and also outstanding " basis of CCD/CMOS imageing sensor and application "

Countermeasure as carry out moving image photographic in the above-mentioned cmos image sensor with high speed has proposed the organization plan shown in Figure 52 and Figure 53.This cmos image sensor 31 is the situations that are suitable for surperficial irradiation type cmos image sensor, shown in the plane area block layout of Figure 52, is the camera watch region that photodiode and a plurality of MOS transistor constitute in the assortment formation of the needs zone of a semiconductor chip by photo-electric conversion element, promptly form so-called photodiode PD-sensor circuit zone 32, form the ADC-storage area 33 that disposes a plurality of moulds/number (AD) change-over circuit and storing mechanism that is connected with each pixel with 32 adjacency ground, this photodiode PD-sensor circuit zone.

Figure 53 represents the unit picture element cross-section structure of cmos image sensor 31.This example forms p N-type semiconductor N well area 36 on n N-type semiconductor N substrate 35, on each regional p N-type semiconductor N well area 36 of dividing by pixel separation zone 37, form the unit picture element 38 that constitutes by photodiode PD and a plurality of MOS transistor Tr, form multilayer via interlayer dielectric 43 in the substrate surface side, for example be formed with the multilayer wired layer 39 of ground floor distribution 441, second layer distribution 442 and the 3rd layer of distribution 443, and further form micro lens 42 on colour filter 41 and the sheet thereon and formation surface irradiation type.Photodiode PD is the baried type photoelectric diode structure that has n N-type semiconductor N zone 46 and become the p+ semiconductor regions 47 of surface savings layer.Though it is not shown to constitute the MOS transistor Tr of pixel, for example is to have three transistor arrangements of reading transistor, reset transistor, amplifier transistor, and can also is to add transistorized four transistor arrangements of vertical selection.

This cmos image sensor 31 carries out mould/number conversion simultaneously after carrying out opto-electronic conversion by photodiode, and remains in the storing mechanism as data, reads in turn from storing mechanism then at once.This structure was because the signal that mould/number has been changed carried out signal processing after once remaining in the storing mechanism, so energy while shading.

But the cmos image sensor of Figure 52 structure is owing to have photodiode PD-sensor circuit zone 32 and ADC-storage area 33 in a semiconductor chip, so when setting resolution increasing for increasing pixel count, its unit picture element is that the aperture area of fine pixel diminishes, the sensitivity that can not get.And the chip service efficiency is bad, and area increases and unavoidable cost height.

Summary of the invention

The invention provides a kind of CMOS N-type semiconductor N image sensor module and manufacture method thereof, when improving pixel aperture ratio, seek to improve the service efficiency of chip, and can make simultaneous shutter operation by all.

Semiconductor image sensor module of the present invention is laminated to be had: laminated have first semiconductor chip and second semiconductor chip, described first semiconductor chip, it possesses the imageing sensor that the rule assortments of a plurality of pixels and described each pixel are made of photo-electric conversion element and transistor; Described second semiconductor chip, it possesses the A/D converter array that is made of a plurality of A/D converters.

Ideal form of the present invention is further laminated the 3rd semiconductor chip in described semiconductor image sensor module, and the 3rd semiconductor chip possesses the memory cell arrays that possesses encoder and sense amplifier at least.

Ideal form of the present invention be make a plurality of photo-electric conversion elements and a plurality of memory components in the mode that has an A/D converter relative described the 3rd semiconductor chip of described first and second semiconductor chips near configuration.

Memory component can be by volatile memory, float gate nonvolatile semiconductor memory, MONOS type nonvolatile memory, get many-valued nonvolatile memory etc. constitutes.

Memory cell arrays can be set for has the structure of parity check with bank bit in memory cell arrays.Memory cell arrays can be set for has the structure of defective relief with the preparation position in memory cell arrays.

Semiconductor image sensor module of the present invention is laminated first semiconductor chip and the 4th semiconductor chip, described first semiconductor chip, it possesses the imageing sensor that the rule assortments of a plurality of pixels and described each pixel are made of photo-electric conversion element and transistor; Described the 4th semiconductor chip, it possesses the analogue type nonvolatile memory array that is made of a plurality of analogue type nonvolatile memories, wherein, utilizes described analogue type nonvolatile memory to remember according to the amount of information of putting aside the quantity of electric charge.

The manufacture method of semiconductor image sensor module of the present invention comprises: form the operation of first semiconductor chip, this first semiconductor chip possesses the imageing sensor of the regular assortment of a plurality of pixels two dimension that each pixel is made of photo-electric conversion element and transistor; Form the operation of second semiconductor chip, this second semiconductor chip possesses the A/D converter array that is made of a plurality of A/D converters; Laminated described first semiconductor chip and described second semiconductor chip, and to be inverted and to utilize the through hole that protrudes joint or utilize relative LSI chip vertically to connect wafer to connect the pixel of described imageing sensor and the operation of described A/D converter

The ideal form of semiconductor image sensor module manufacture method of the present invention is to have the operation that forms the 3rd semiconductor chip in the manufacture method of described semiconductor image sensor module, the 3rd semiconductor chip has the memory cell arrays that possesses encoder and sense amplifier at least, and has the laminated and operation that the pixel of imageing sensor is connected with memory by A/D converter of first semiconductor chip, second semiconductor chip and the 3rd semiconductor chip.This connection operation is connected the pixel of the imageing sensor of first semiconductor chip is vertically connected wafer by relative wafer face by the A/D converter of second semiconductor chip through hole with the memory of the 3rd semiconductor chip.

The manufacture method of semiconductor image sensor module of the present invention comprises: the operation that forms first semiconductor chip, this first semiconductor chip possesses the imageing sensor of the regular assortment of a plurality of pixels two dimension that each pixel is made of photo-electric conversion element and transistor, form the operation of the 4th semiconductor chip, the 4th semiconductor chip possesses the analogue type nonvolatile memory array that is made of a plurality of analogue type nonvolatile memories, first semiconductor chip and operation that the pixel of imageing sensor with analogue type nonvolatile memory be connected laminated with the 4th semiconductor chip.

According to semiconductor image sensor module of the present invention, first semiconductor chip possesses imageing sensor, second semiconductor chip that pixel is made of photo-electric conversion element and transistor and possesses the A/D converter array that is made of a plurality of A/D converters, owing to be first such semiconductor chip and the laminated structure of second semiconductor chip, therefore so first semiconductor chip can form major part as pixel region, can improve the aperture opening ratio of photo-electric conversion element and can improve the utilance of chip.And be provided with semiconductor chip with the memory cell arrays that constitutes by a plurality of memory components, with the short time carrying out mould/number conversion by second semiconductor chip from the picture element signal of first semiconductor chip, owing to carry out signal processing again after once remaining in the memory cell arrays, so shading when can realize pixel.

First semiconductor chip possesses the imageing sensor that pixel is made of photo-electric conversion element and transistor, second semiconductor chip possesses the A/D converter array that is made of a plurality of A/D converters, the 3rd semiconductor chip possesses the memory cell arrays that possesses encoder and sense amplifier at least, owing to be the first such semiconductor chip, second semiconductor chip, the structure that the 3rd semiconductor chip is laminated, so become the device of a unification, the aperture opening ratio of photo-electric conversion element can be improved and the utilance of chip can be improved, and shading when can realize both full-pixel.

Make a plurality of photo-electric conversion elements and a plurality of memory components have an A/D converter ground the approaching configuration of first relative second semiconductor chip with the 3rd semiconductor chip, like this, signal from a plurality of photo-electric conversion elements is carried out mould/number conversion by A/D converter serially, can the short time remain in the memory component shading when both full-pixel can be carried out.

According to semiconductor image sensor module of the present invention, first semiconductor chip possesses imageing sensor, the 4th semiconductor chip that pixel is made of photo-electric conversion element and transistor and possesses the analogue type nonvolatile memory array, owing to be first such semiconductor chip and the laminated structure of the 4th semiconductor chip, therefore so first semiconductor chip can form major part as pixel region, can improve the aperture opening ratio of photo-electric conversion element and can improve the utilance of chip.And owing to carry out signal processing again after once remaining on the picture element signal from first semiconductor chip in the analogue type Nonvolatile memery unit, so shading when can realize pixel.

The manufacture method of semiconductor image sensor module according to the present invention, the aperture opening ratio of photo-electric conversion element can be improved and the utilance of chip can be improved, and shading when can realize both full-pixel, can make the semiconductor image sensor module that possesses cmos image sensor.

Description of drawings

Fig. 1 is the summary construction diagram of expression semiconductor image sensor module first embodiment of the present invention;

Fig. 2 is the profile that is suitable for rear surface irradiation type cmos image sensor major part of the present invention;

Fig. 3 is the pattern stereogram of Fig. 1 embodiment major part;

Fig. 4 is the mount structure figure that transmits explanation for the first embodiment data;

Fig. 5 is the block diagram of the first embodiment integral body;

Fig. 6 is the summary construction diagram of expression semiconductor image sensor module second embodiment of the present invention;

Fig. 7 is the summary section that second embodiment gets many-valued nonvolatile memory (resistance-varying type multivalued storage);

Fig. 8 is the circuit diagram of multivalued storage;

Apply the key diagram of pulse during Fig. 9 bifurcation resistance change memory;

Voltage-current characteristic figure during Figure 10 bifurcation resistance change memory;

Figure 11 is the winding diagram of memory array;

Figure 12 is the action specification figure that writes " 0 ";

Figure 13 is the action specification figure that writes " 1 ";

Figure 14 reads action specification figure;

Figure 15 is the I-E characteristic figure of multivalued storage;

Figure 16 is the program diagram for the multivalued storage explanation;

Figure 17 is the key diagram of a plurality of pulse protocol ideal situations of multivalued storage;

Figure 18 is the summary construction diagram of unsteady gate nonvolatile semiconductor memory;

Figure 19 is the key diagram of explanation as cell array wiring, write activity and the cancellation action of the unsteady gate nonvolatile semiconductor memory of representative;

Figure 20 is the summary construction diagram of MONOS type nonvolatile memory;

Figure 21 is the key diagram of cell array wiring, write activity and the cancellation action of explanation MONOS type memory;

Figure 22 is the summary construction diagram of expression semiconductor image sensor module the 3rd embodiment of the present invention;

Figure 23 is the memory cell circuits figure that the switching capacity pattern is intended memory;

Figure 24 is the summary construction diagram that the switching capacity pattern is intended memory;

Figure 25 is the winding diagram that the switching capacity pattern is intended memory;

Figure 26 A～Figure 26 C is the manufacturing procedure picture of expression semiconductor image sensor module manufacture method one embodiment of the present invention;

Figure 27 A and Figure 27 B are the summary construction diagrams of representing semiconductor image sensor module the 4th embodiment of the present invention respectively;

Figure 28 A and Figure 28 B are the summary construction diagrams of representing semiconductor image sensor module the 5th embodiment of the present invention respectively;

Figure 29 A and Figure 29 B are the summary construction diagrams of representing semiconductor image sensor module the 6th embodiment of the present invention respectively;

Figure 30 A and Figure 30 B are the summary construction diagrams of representing semiconductor image sensor module the 7th embodiment of the present invention respectively;

Figure 31 A and Figure 31 B are the summary construction diagrams of representing semiconductor image sensor module the 8th embodiment of the present invention respectively;

Figure 32 A and Figure 32 B are the summary construction diagrams that semiconductor image sensor module the 9th embodiment of the present invention is represented with manufacture method;

Figure 33 A and Figure 33 B are the manufacturing procedure pictures of the semiconductor image sensor module manufacture method of expression the 8th embodiment Figure 31 A;

Figure 34 A and Figure 34 B are the manufacturing procedure pictures of the semiconductor image sensor module manufacture method of expression the 8th embodiment Figure 31 B;

Figure 35 A and Figure 35 B are the summary construction diagrams that semiconductor image sensor module the tenth embodiment of the present invention is represented with manufacture method;

Figure 36 A and Figure 36 B are the summary construction diagrams that semiconductor image sensor module the 11 embodiment of the present invention is represented with manufacture method;

Figure 37 A and Figure 37 B are the summary construction diagrams that semiconductor image sensor module the 12 embodiment of the present invention is represented with manufacture method;

Figure 38 is for the equivalent circuit figure in the pixel of explanation semiconductor image sensor module the 13 embodiment of the present invention;

Figure 39 is the summary construction diagram of expression semiconductor image sensor module the 14 embodiment of the present invention;

Figure 40 is the block diagram of expression semiconductor image sensor module the 15 example structure of the present invention;

Figure 41 is the sequential chart for the action of explanation the 15 embodiment semiconductor image sensor module;

Figure 42 is the mode sectional drawing of expression semiconductor image sensor module the 16 embodiment of the present invention;

Figure 43 is the block diagram of expression sixteenth embodiment of the invention semiconductor image sensor module structure;

Figure 44 is the equivalent circuit figure of expression sixteenth embodiment of the invention CMOS solid-state imager dot structure;

Figure 45 A～Figure 45 C is the profile (one) of expression sixteenth embodiment of the invention rear surface irradiation type CMOS solid-state imager manufacturing process;

Figure 46 A and Figure 46 B are the profiles (its two) of expression sixteenth embodiment of the invention rear surface irradiation type CMOS solid-state imager manufacturing process;

Figure 47 A and Figure 47 B are the profiles (its three) of expression sixteenth embodiment of the invention rear surface irradiation type CMOS solid-state imager manufacturing process;

Figure 48 is the mode sectional drawing of expression semiconductor image sensor module the 17 embodiment of the present invention;

Figure 49 A～Figure 49 C is the profile (one) of expression seventeenth embodiment of the invention rear surface irradiation type CMOS solid-state imager manufacturing process;

Figure 50 A and Figure 50 B are the profiles (its two) of expression seventeenth embodiment of the invention rear surface irradiation type CMOS solid-state imager manufacturing process;

Figure 51 A and Figure 51 B are the profiles (its three) of expression seventeenth embodiment of the invention rear surface irradiation type CMOS solid-state imager manufacturing process;

Figure 52 is the summary plane figure of prior art semiconductor image sensor module;

Figure 53 is the profile of surface irradiation type cmos image sensor major part;

Figure 54 is the summary construction diagram of ccd image sensor;

Figure 55 is the summary construction diagram of cmos image sensor;

Figure 56 A and Figure 56 B are the savings sequential charts of ccd image sensor and cmos image sensor;

Figure 57 A and Figure 57 B are the key diagrams of expression ccd image sensor and cmos image sensor difference of document image when high-speed camera.

Description of reference numerals

1CCD imageing sensor 2 camera watch regions 3 are subjected to optical sensor 4 vertical transfer registers 5 horizontal transmission registers 6 efferents 7 to read the 11CMOS of grid section imageing sensor 12 pixels 13 camera watch regions 14 control parts 15 vertical drive circuits 16 row sections 17 horizontal drive circuits, 18 output circuits, 19 column signal treatment circuits, 20 horizontal signal lines, 21 vertical signal line 31CMOS imageing sensors, 32 photodiodes-42 upper micro lens, 43 interlayer dielectrics, 441 of, 37 pixel separation zone, 33 ADC-memory area 35n type semiconductor substrate 36p type semiconductor well zone, sensor circuit zone, 38 unit picture elements, 41 colour filters; 442; 443 distribution 47p+ semiconductor regions 51; 99; The 4th semiconductor chip 56 transistor formation region territories 57 photodiodes that the 3rd semiconductor chip 55 that the second semiconductor chip 54 that the first semiconductor chip 53 that 100 semiconductor image sensor modules 52 possess imageing sensor possesses the A/D converter array possesses memory cell arrays possesses the analogue type nonvolatile memory array form 63p type semiconductor well zone, regional 61n type silicon substrate 62 pixel separation zone 64 source electrodes-drain region 65 gate insulating films, 66 grid 68a n+ electric charges and put aside, 73 upper micro lens, 76 interlayer dielectrics, 77 multilayer wired, 81 of regional 68b N-shaped semiconductor regions 69p ' semiconductor regions, 71 passivating films, 72 colour filters; 82 pads, 83 miniature protrusions, 84 connect contact site 84; 201 86 86a 87AD 88 89 90 93 94X X 94Y Y 101 102 103 104 105 106 111 MONOS 112113 114 115 116 Si3N4 117 118 121 122A／D 123 124 125 130 131 132 133 134D 135136D 141p 142143n 144n 145 146p147n 148p 149p 150 151n 153 154 155 156 157 158 161 162 163164 165 A／D 170 172 173 174； 175; 176 source electrodes-drain region 177; 178 word lines, 179 conduction stick harnesses, 180 bit lines, 181 sense wires 182; 183 resistance-varying type multivalued storage elements, 184 storage materials 185; 186 Pt electrodes 166; 167; 168; 169; 187; 188; 189; 190 semiconductor image sensor modules, 193 second semiconductor chips, 196 first semiconductor chips, 197 second semiconductor chips 191; 192; 194; 198; 199 semiconductor image sensor modules 200; 261; 300 semiconductor image sensor modules, 210 photodiodes, 212 transmit transistor, 214 amplifier transistors, 220 reset transistors, 262 semiconductor chips, 263 (263A; 263B) pixel 264 camera watch regions 265; 266 peripheral circuits, 311 unit picture element, 312 pixel array unit, 313 row or unit picture element scanning circuit, 314 row or unit picture element handling part, 315 reference voltage supply units, 316 row or unit picture element scanning circuit, 317 horizontal output lines, 318 sequential control circuits, 319 chips, 356 transistor formation region territories, 400 semiconductor image sensor module 401a; 402b sensor chip 402 signal processing chips 403 built-in inserted plates 410 semiconductor substrate 411 (surface) dielectric films 412 semiconductor layers 413 are tested with electrode, 414 photodiodes (photo-electric conversion element), 415 transistors, 416 semiconductor layer through electrodes, 417 semiconductor layer insulating barriers perforation distribution, 418 connection distributions, 419 surface insulating films, 420 interlayer dielectrics, 421 and are imbedded, 522 AGC sections of distribution, 430 supporting substrates, 431 supporting substrates perforation distributions (supporting substrates distribution) 432 protrusions (projected electrode), 440 distributions, 441 look edge layers, 442 wire-bonded, 512 514V of imaging pixels section selection mechanism 516H selection mechanism, 518 timing sequencers (TG) 520S/H-CDS circuit parts, 524 A/D converter sections, 526 digital enlarging section 600 photodiodes (PD), 610 unsteady diffusion parts (FD section), 620 transmission transistors, 630 reset transistors, 640 amplifier transistors, 650 address transistors, 660 vertical signal lines 660; 670 constant-current sources.

Embodiment

Following with reference to the description of drawings embodiments of the invention.

Fig. 1 represents the schematic configuration of semiconductor image sensor module first embodiment of the present invention.The semiconductor image sensor module 51 of the embodiment of the invention is laminated to be had: first semiconductor chip 52, and it possesses the imageing sensor that a plurality of pixels rule assortments and each pixel are made of photodiode that becomes photo-electric conversion element and transistor; Second semiconductor chip 53, it possesses the A/D converter array (so-called mould/number conversion circuit) that is made of a plurality of A/D converters; The 3rd semiconductor chip 54, it possesses the memory cell arrays that possesses encoder and sense amplifier at least.

The imageing sensor of first semiconductor chip 52 is to form transistor formation region territory 56 in the chip surface side in this example, this formation zone 56 is formed with the transistor of component unit pixel, form photodiode in the chip back side and form zone 57, this formation zone 57 becomes two-dimensional matrix row shape to the two-dimentional regularly assortment of photodiode, for example assortment that have the face of injecting of injecting light L and become a plurality of photo-electric conversion elements, so-calledly constitutes with such rear surface irradiation type cmos image sensor.

Fig. 2 represents the example of rear surface irradiation type cmos image sensor unit picture element.This routine rear surface irradiation type cmos image sensor 60 in filming semiconductor substrate for example form pixel separation zone 62 on the camera watch region 59 of n type silicon substrate 61, on the p N-type semiconductor N well area 63 of each pixel region of being divided by pixel separation zone 62, form a plurality of MOS transistor Tr that constitute by n type source electrode-drain region 64, gate insulating film 65 and grid 66.These a plurality of MOS transistor Tr are so-called sensor crystal pipes of amplifier transistor and XY selector switch transistor etc., are formed on the substrate surface side.As a plurality of transistor Tr for example can be three transistor arrangements of reading transistor, reset transistor, amplifier transistor with the source electrode-drain region that becomes floating diffusion region FD, perhaps, can also be to add transistorized four transistor arrangements of vertical selection.Be formed with in the substrate surface side and formed multilayer wired 77 multilayer wired layer 78 via interlayer dielectric 76.And for example the enhancing of silicon substrate etc. is engaged with on the multilayer wired layer 78 with supporting substrates 79.

Photodiode PD includes: the p+ semiconductor regions 69 that becomes Guinier-Preston zone that is used to suppress undercurrent that the n+ electric charge is put aside regional 68a and n N-type semiconductor N zone 68b and formed on substrate table back of the body two sides.And be formed with colour filter 72 via passivating film 71 in the substrate back side, and forming micro lens 73 on the sheet corresponding on the colour filter 72 with each pixel.This camera watch region 59 becomes so-called photodiode PD sensor circuit zone.

On the other hand, a plurality of A/D converter arrays that constitute by a plurality of A/D converters of second semiconductor chip, 53 plane earths configuration.

The 3rd semiconductor chip 54 is formed with memory array, and it is that the memory component subarray assortment that is made of a plurality of memory components is become two dimension.This memory component subarray possesses encoder and sense amplifier.Each memory component subarray as described later, form as memory array block accordingly with each pel array piece that a plurality of pixels (pixel) are gathered as group, this memory array block forms to possess encoder and the sense amplifier that is made of a plurality of memory components.

For example can use with DRAM, SRAM as memory component and to be the volatile memory of representative, the nonvolatile memory of floating gate type and the nonvolatile memory of MONOS type etc.

Figure 18 and Figure 19 represent the schematic configuration of unsteady gate nonvolatile semiconductor memory.As shown in figure 18, this unsteady gate nonvolatile semiconductor memory 101 forms source region 103 and drain region 104 on semiconductor substrate 102, and forms floating gate 105 and control gate 106 via gate insulating film.Figure 19 represents as the cell array wiring of the NAND type of representative, NOR type, AND type flash memories, write activity and cancellation action.The NAND type is owing to omitting contacting of bit line and single unit, so can realize 4F ideally ²(F be by the minimum spacing of design specification decision 1/2) minimum cell size.Writing is raceway groove FN tunnel (Fowler-Nordheim Tunneling) mode, and cancellation is that substrate FN tunnel emits mode.NOR type energy high random access and CHE (Channel Hot Electron channel hot electron) write, and cancellation is to emit mode to the FN tunnel of source terminal.The AND type write be drain electrode end the FN tunnel style, to read be raceway groove FN tunnel style.The writing speed of NAND type flash memories is 25～50 slow μ s, by Fig. 4 with improve the processing of degree side by side as shown in Figure 5, then can carry out the GBPS (high-speed data transfer of GB/sec).

Figure 20 and Figure 21 represent the schematic configuration of MONOS type nonvolatile memory.As shown in figure 20, MONOS type nonvolatile memory 111 forms source region 113 and drain region 114 on semiconductor substrate 112, and forms tunnel oxide film 115, Si3N4 charging trap layer 116, top oxide-film 117 and polygate electrodes 118 in turn.Figure 21 represents cell array wiring, write activity and the cancellation action of MONOS type memory.Program is with CHE hot electron to be injected to Si3N4 charging trap layer 116, is undertaken by change threshold.Cancellation is to carry out with hot hole injection or pulling out of FN tunnel.

Second semiconductor chip 53 that possesses first semiconductor chip 52 of cmos image sensor 60 and possess the A/D converter array is to inject side opposite surfaces side with the light of first semiconductor chip 52 and second semiconductor chip 53 is relatively laminated, and for example protrudes between 83

pads

81,82 that interconnect usefulness via the conductivity connector and to be electrically connected.Possess second semiconductor chip 53 of A/D converter array and laminated thereon the 3rd semiconductor chip 54 with memory cell arrays via the perforation contact site 84 that connects second semiconductor chip 53 A/D converter and the memory component ground connection joint that is electrically connected.

The area of a common relative pixel (pixel), A/D converter then needs 50～100 times layout area.So present embodiment comes the pixel count of an A/D converter layout area of aggregation process degree with an A/D converter.And be that a plurality of pixel datas are kept at structure in the memory component of the 3rd laminated on it semiconductor chip 54.Because each pixel has 10～14 data volume usually, pairing pixel count is configured to the array row with the memory element of the product number of the pairing figure place of the memory element that can store each Pixel Information amount directly over the A/D converter.

Fig. 3 pel array piece that to be modal representation be made of above-mentioned a plurality of pixels and an A/D converter and by corresponding with the pixel count of pel array piece and hold the stereogram of a memory component subarray (the being memory array block) relation that a plurality of memory components of data constitute.Laminated and interconnect the 3rd semiconductor chip 54 of second semiconductor chip 53 of first semiconductor chip 52 of imageing sensor, A/D converter array and memory cell arrays, so that A/D converter 87 is corresponding to a pel array piece 86 that is made of a plurality of pixels (pixel), a memory component subarray (memory array block) 88 that is made of a plurality of memory components that can remember pel array piece 86 information is corresponding to this A/D converter 87.

Fig. 4 is the example that pel array piece 86 data transmit.Have 86 pairs of the pel array pieces that constitute by the individual pixel 86a in 64 (8 * 8) should example in an A/D converter (ADC) 87.87 with the serial transfer view data from pel array piece 86 to A/D converter.Serially data are write to memory array block 88 from A/D converter 87 highway width according to resolution memory.This example converts a pixel data to 12 and writes to memory array block 88.Memory array block 88 possesses sense amplifier 93 and selects encoder 94[X encoder X, the Y encoder Y of pixel 86a].Because A/D converter 87 is configured on the transducer, so the pixel count of being handled by an A/D converter 87 will be chosen to make the area of the area of A/D converter 87 and pel array piece 86 to become such pixel count of same degree, because memory array block 88 also is configured on the A/D converter 87, says so desirable on the chip area efficient so carry out being chosen in of same degree size.Memory array block 88 is configured on the A/D converter 87.The position of pel array piece 86, A/D converter 87, memory array block 88 relation also not necessarily just goes up, as long as just can signal wiring taking-up portion is overlapping respectively.

Fig. 5 is whole block diagram.Be provided with: pel array 121, its assortment have a plurality of 64 pel array pieces 86; 122, one A/D converters 87 of A/D converter array are a plurality of the A/D converter array plane ground configuration that is made of a plurality of A/D converters 87 corresponding to each pel array piece 86 ground; Memory array 123, its a plurality of memory array block 88 plane earths configurations are a plurality of; Digital signal processing device 124.Each pel array 121, A/D converter array 122, memory array 123, digital signal processing device 124 are by control circuit 125 controls.In this block diagram, each pixel data in each 64 (8 * 8) pel array piece 86 in the pel array 121 is transmitted to an A/D converter 87 serially, and, the pixel data of each pel array piece 86 is transmitted to each A/D converter 87 corresponding with A/D converter array 122 concurrently.Is that a pixel data is converted to 12 by the data that transmit to A/D converter array 122 in this example, writes to memory array 123 with the parallel processing of A/D converter number * 12.The data of this memory array 123 are handled by digital signal processing device 124.In this wise the data of the pixel count among both full-pixel or are transmitted side by side, so can realize very at a high speed transfer rate as system.

Memory cell arrays described in the present embodiment (memory array block) 88 is to possess reading circuit (sense amplifier), write circuit and encoder about 500～1kbit.If 2 μ m for example ²Pixel Dimensions, A/D converter 87 are 100 μ m ²The time, then the pixel count of being handled by an A/D converter 87 is 50, the memory cell arrays size on it is set for the size that comprises 50 * 10～14 encoders just can.When the occupation rate of unit in the amount of information of setting 14 of maximums for, the memory array block set 60% for, then the area of memory cell became 0.01 μ m ², can realize with the DRAM cell size in 90nm epoch.

The rear side of first semiconductor chip 52 is aperture opening ratio owing to mainly major part is formed as photodiode PD array so can obtain enough openings as photodiode PD.And owing to can obtain enough aperture opening ratios, so also can make fine pixel on the contrary.

Once remained in the memory component unit by the signal of mould/number conversion.To the time that memory component writes, when for example carrying out serial access, can transmit with μ s level as if use DRAM, so the savings time of relative photodiode PD is enough short, the result is shading when can realize both full-pixel.

As shown in Figure 3, also can possess parity check in memory component subarray 88 relieves with tediously long position 90 with position 89 and defective.

Semiconductor image sensor module 51 according to first embodiment, by first semiconductor chip 52 that possesses rear surface irradiation type cmos image sensor 60, possess the A/D converter array that constitutes by a plurality of A/D converters 87 second semiconductor chip 53, possess memory cell arrays and promptly possess the 3rd semiconductor chip 54 laminated being integral the memory array (memory cell arrays) of a plurality of memory component subarrays (memory array block) 88 plane assortments, and can be the photodiode PD area of rear side that aperture ratio of pixels becomes enough greatly.Like this, just can be according to the dwindling of optical system the pixel miniaturization, and can realize low noiseization as ccd image sensor.Particularly also can make the big fine pixel of aperture opening ratio, so can obtain the semiconductor image sensor module of high image resolution.And have pel array 86 that constitutes by a plurality of pixels and the memory cell arrays 88 that constitutes by a plurality of memory components for an A/D converter 87, owing to after being remained on the memory cell arrays 88, carry out signal processing from pel array 86 with the short time, so shading when can carry out both full-pixel by the signal of mould/number conversion.Therefore, can provide high sensitivity and the energy cmos image sensor module of electronics shading simultaneously.It is suitable that the cmos image sensor module of present embodiment for example is useful in that senior single-lens reflex number fixes in picture camera and the mobile phone etc.

First embodiment is first, the second and the

3rd semiconductor chip

52,53 and 54 is laminated, but in addition for example also can be laminated with second semiconductor chip 53 of A/D converter array first semiconductor chip 52 of cmos image sensor, and not laminated the 3rd semiconductor chip 54 with memory cell arrays, first and second semiconductor chips 52,53 lamilated body is configured in the substrate or encapsulation that needs together, be connected between second semiconductor chip 53 and the 3rd semiconductor chip 54 via outside wiring, constitute semiconductor image sensor module like this.

Fig. 6 represents the schematic configuration of semiconductor image sensor module second embodiment of the present invention.The semiconductor image sensor module 99 of present embodiment similarly laminatedly has with above-mentioned: first semiconductor chip 52, its a plurality of pixels rule assortments and possess by the photodiode that constitutes each pixel and form the cmos image sensor 60 that zone 57 and transistor formation region territory 56 constitute; Second semiconductor chip 53, it possesses the A/D converter array that is made of a plurality of A/D converters; The 3rd semiconductor chip 54, it possesses the memory cell arrays that possesses encoder and sense amplifier at least.

Are the formations that form with many-valued nonvolatile memory (below be called multivalued storage) as the memory component of the 3rd semiconductor chip 54 in the present embodiment.This multivalued storage for example can use the non-volatile resistive ram (RRAM) of the huge magnetoresistive film that IEDMTechnical Digest pp193-196 (2002) delivers.

The example of this RRAM (Resistance RAM) is indicated among Fig. 7 (cross-section structure) and Fig. 8～Figure 17 (program).

Fig. 8 represents simple elements evaluating characteristics circuit.Fig. 9 indicating impulse applies figure, and Figure 10 represents electric current and voltage figure.

As shown in Figure 7, this RRAM is that resistance-varying type multivalued storage element forms element separated region 173 on silicon substrate 172, and the substrate of being divided by element separated region 173 172 has been formed first, second and the 3rd regions and source 174,175 and 176.Utilize first and second regions and source 174,175 and form the first MOS transistor Tr via the film formed grid of insulation (so-called word line) 177.And utilize the second and the 3rd regions and source 175,176 and form the second MOS transistor Tr2 via the film formed grid of insulation (so-called word line) 178.Sense wire 181 is connected with second regions and source 175 via the conduction stick harness 179 that connects interlayer dielectric.On the other hand, resistance-varying type multivalued storage element 182 is connected with the 3rd regions and source 174,176 with first respectively with 183 via conduction stick harness 179.Resistance-varying type multivalued storage element 182 is connected by bit line 180 with 183 the other end.Memory component 182 and 183 for example can use the material of SrZrO3:Cr class.Storage material has added the material of Cu, Ag etc. in addition in addition in PCMO (Pr0.7Ca0.3MnO3), chalcogenide.Form memory component 182,183 at the Pt of formation up and down of this storage material 184 electrode 185,186.Constitute one by a memory component and a MOS transistor.Fig. 7 constitutes the memory component of two bit positions of common sense wire.Fig. 8 represents single memory component circuit.

At first consider the situation of bifurcation resistance change memory.

Apply pulse voltage to memory component as shown in Figure 9.The threshold value of switching voltage changes with material, film thickness.Fig. 9 is threshold voltage settings+-0.7V.Though in fact under many situations, there is not object,, write " 0 ", write the situation that the absolute value of the threshold voltage of " 1 " equates and describe at this.When pulse voltage rises to threshold value resistance change (4 → 5,10 → 11 (with reference to Figure 10)) then when above.The actual action of reading is to apply than the low voltage of threshold value to judge " 0 ", " 1 " according to the electric current that flows.Most situations are to make interlaminated resistance between " 0 " resistance value and " 1 " resistance value, and relatively this resistance and memistor are judged " 0 ", " 1 ".Figure 11 represents the winding diagram of memory array.Figure 12 represents to write the action specification figure of " 0 ".When " 1 " (low resistance) position writes " 0 " (high resistance), the word line of selected cell is connected, to apply the mode of the voltage more than the threshold voltage to memory component, apply pulse voltage and write " 0 " at bit line.

Figure 13 explanation " 1 " writes (Reset resets).The word line of " 1 " write activity selected cell is connected,, between sense wire-bit line, applied pulse voltage and write " 1 " to apply the mode of the voltage more than the threshold voltage to memory component.Figure 14 is the explanation of reading action.Between sense wire-bit line, apply the voltage enough lower, this current conversion is become voltage and compare to judge " 1 ", " 0 " with the electric current that in interlaminated resistance (reference benchmark), flows than memory component threshold voltage.

Figure 15 is that threshold value is the I-E characteristic example of four multivalued storage.Under the situation of multivalued storage, threshold value becomes in the I-E characteristic example of a plurality of Fig. 15, and reading of V0, V1 ', V2 ', V3 ' is to carry out with the voltage lower than V1 (Vread among the figure).To than before the high level of level when carrying out write activity, carry out the writing of level 2, carry out the writing of level 3, carry out writing of level 4 with the voltage between the V1-V2 with the voltage more than the V3 with the voltage between the V2-V3.In addition, write to the level lower than preceding state fashionable, with carry out from V3 ' to the voltage the V2 ' the writing of level 3, with carry out the writing of level 2 from V2 ' to the voltage the V1 ', to carry out writing of level 1 to the voltage the V0 from V1 '.Read with the interlaminated resistance of the level separately that produces relatively size carry out.Carry out many-valued control owing to can be used to control, so cell array circuit self identical with bifurcation (with reference to Figure 11) from the bias voltage of memory array outside.Write pulse even multivalued storage changes, also can realize.

Figure 16 is the measured result of described IEDM (International Electron Device Meeting).Figure 17 is the key diagram of this ideal situation.As shown in the figure, component resistance is counted the variation of step evolution ground according to program pulse.Reset is to apply pulse in the other direction to carry out.Reading is relative program voltage and apply enough low voltage and come detection resistance value.At this moment also be that the cell array circuit is identical with Fig. 11.

Like this, RRAM is as long as regulate writing umber of pulse and just carrying out record of memory according to the savings quantity of electric charge of photodiode PD.And read by electric current difference mobile to memory and detection resistance value (voltage) is carried out.When the data volume of each pixel was set for n value memory with x, the memory figure place y that then constitutes each pixel memories unit took advantage of root with regard to the n that becomes x, can reduce the memory figure place in the memory array block.

Other structures are identical with the first above-mentioned embodiment among Fig. 6, omit repeat specification so pay same-sign on the part of correspondence.

According to the second Embodiment C mos image sensor module 99, used non-volatile multivalued storage by the memory component that constitutes the 3rd semiconductor chip memory cell arrays, and can reduce the storage element number of packages of the recorded information corresponding significantly with pixel.And with first embodiment similarly, rear side is owing to mainly form major part, so can obtain the aperture opening ratio of enough photodiode PD as the array of photodiode PD.And also can make fine pixel.Once remained in the memory component unit by the signal of mould/number conversion.To the time that memory component writes, so long as serial access just can transmit with μ s level, so relatively the savings time of photodiode PD enough short, shading when can realize both full-pixel.Therefore, can provide high sensitivity and the energy cmos image sensor module of electronics shading simultaneously.

Figure 22 represents the schematic configuration of semiconductor image sensor module the 3rd embodiment of the present invention.The semiconductor image sensor module 100 of present embodiment is laminated to be had: first semiconductor chip 52, its a plurality of pixels rule assortments and possess by the photodiode that constitutes each pixel and form zone 57 and transistor formation region territory 56 same cmos image sensors 60 that constitute and above-mentioned; The 4th semiconductor chip 55, it is formed with memory cell arrays.

The memory component that constitutes the 4th semiconductor chip 55 memory cell arrays in the present embodiment is for example by being that representative simulation type nonvolatile memory forms with the switching capacity.This analogue type nonvolatile memory for example produces current potential according to the quantity of electric charge of the photodiode PD of pixel savings by amplifier in switching capacity, come the savings quantity of electric charge of control capacitance by this current potential.The electric charge of being put aside by electric capacity is with to be exaggerated device amplifying signal electric charge proportional.As long as at this moment the memory component of corresponding pixel quantity part is arranged just can.

Figure 23 represents to use the memory cell circuits figure of switching capacity.This memory cell circuits 130 comprises: memory capacitor 131, write with switch 132, write virtual switch 133, write with D flip-flop 134, read with switch 135, read with D flip-flop 136.Each switch 132,133,135 is made of nmos pass transistor Trn and PMOS transistor Tr p.That is, each switch is made of the CMOS transistor.Intend in memory at this switching capacity pattern, writing is to export when becoming high level (High) when writing Q with D flip-flop 134, then writes with switch 132 to be switched on, and memory capacitor 131 is charged to voltage between Vin-Vc.Reading is when reading output Q with D flip-flop 136 and become high level (High), then reads with switch 135 (so-called CMOS passes through transistor) to be switched on and to export.Also can add amplifier at its back segment.The data that the switching capacity pattern is intended memory transmit to A/D converter (ADC).

Figure 24 represents an example of switching capacity cross-section structure.Represent switching capacity among the figure and read a part of using switch.P N-type semiconductor N substrate 141 is formed with element separated region 142, be formed with the source region 143 of n type and drain region 144 on the substrate of being divided by element separated region 142 141 and via gate insulating film and the grid 145 that forms by the poly-silicon of individual layer, and formation nmos pass transistor Trn.P type zone 146 is the current potential supply areas that are used for fixing substrate potential.P N-type semiconductor N substrate 141 is formed with n N-type semiconductor N well area 147, be formed with the source region 148 of p type and drain region 149 on this n N-type semiconductor N well area 147 and via gate insulating film and the grid 150 that forms by the poly-silicon of individual layer, and formed PMOS transistor Tr p.N type zone 151 is the current potential supply areas that are used for fixing the well area current potential.Form by this nmos pass transistor Trn and PMOS transistor Tr p and to constitute the CMOS transistor of reading with switch 135.On the other hand, first electrode 153 that on element separated region 142, forms laminated to form by the poly-silicon of individual layer, dielectric (interlayer dielectric) 154 and gather the memory capacitor 131 of second electrode 155 that silicon forms by bilayer.And form the distribution 158 that is connected with each zone via connecting respectively the conducting electricity stick harness 157 of interlayer dielectric 156.Though distribution 158 has only been represented layer of metal, the wiring diagram picture of multilayer also can.Also can use electric capacity, the mos capacitance that adopts double-level-metal in addition as memory capacitor 131.

Figure 25 represents to have used the block diagram of the analog memory array that is made of switching capacity pattern plan memory.A plurality of switching capacity patterns are intended that memory 130 assortments become the ranks shape and the analog memory array 161 that forms.On the analog memory 130 of each each row, be connected with the incoming line 162 of write control signal and read the incoming line 163 of control signal.Corresponding with the analog memory 130 of analog memory unit 161 each row, and be connected with pel array piece 164 respectively, be connected with A/D converter 165 at outlet side at the input side of analog memory array 161.Put aside in turn each analog memory (memory cell) 130 serially to the analog signal of analog memory array 161 inputs from each pixel of pel array piece 164.Reading is to begin in turn to A/D converter 165 inputs corresponding with pel array piece 164 from memory cell ahead according to reading control signal, and the output digital signal.

Other structures are identical with described first embodiment, so pay prosign and omit repeat specification in the part of correspondence.

Writing of this analogue type nonvolatile memory is to make the memory component subarray of each a plurality of Pixel Information of memory corresponding with each a plurality of pixel, and the bit string line access ground of a plurality of pixels is write to the memory array of correspondence.So long as use this analog memory and be serial access, then the write time just can be to transmit below the μ s level.

Semiconductor image sensor module 100 according to the 3rd embodiment, first semiconductor chip 52 and the 4th semiconductor chip 55 laminated being integral that possess the analogue type nonvolatile memory that possess the rear surface irradiation type cmos image sensor by handle, then with described first embodiment similarly, the rear side of first semiconductor chip 52 mainly forms the array of major part as photodiode PD, the aperture opening ratio of enough photodiode PD can be obtained, and also fine pixel can be made.Since to the time that the analogue type nonvolatile memory writes, also can be to transmit below the μ s level, so the savings time of photodiode PD is enough lacked shading when can realize both full-pixel relatively.

Use Figure 26 that the embodiment of semiconductor image sensor module manufacture method of the present invention is described below.This example is to be suitable for the situation that Fig. 1 first embodiment semiconductor image sensor module 51 is made.

At first shown in Figure 26 A, form first semiconductor chip 52, this first semiconductor chip 52 forms the transistor formation region territory in the first surface side of semiconductor substrate, is the formation zone of the second surface photodiode that becomes photo-electric conversion element at its back side.Specifically then as shown in Figure 2, in filming the face side of semiconductor substrate form pixel transistor, make rear side become light and inject face and form photodiode like that.Face side at semiconductor substrate forms multilayer wired layer, and the supporting substrates of the usefulness of joint enhancing thereon is silicon substrate for example.Rear side at semiconductor substrate forms colour filter via passivating film, and forms micro lens on the sheet.After engaging supporting substrates, use grinding and CMP (chemical machinery grinding) to wait the filming of carrying out semiconductor substrate.For example on supporting substrates, form and the multilayer wired pad that is connected 81 via connecting contact.

Be shown in as Figure 26 B then and form the A/D converter array on the semiconductor substrate at least, and form second semiconductor chip 53, this second semiconductor chip 53 forms the pad 82 that each A/D converter connects usefulness on the surface of semiconductor substrate, and faces the perforation contact site 84 that semiconductor substrate rear side ground forms the perforation semiconductor substrate.This semiconductor substrate is also by filming.

The pad 82 of this second semiconductor chip 53 is provided with the miniature protrusion 83 of conductivity, the pad 81 of the pad 82 of second semiconductor chip 53 with first semiconductor chip, 52 face side is electrically connected via this miniature protrusion 83 with facing down.

Shown in Figure 26 C, form the 3rd semiconductor chip 54, the three semiconductor chips 54 assortment of memory cell arrays plane is formed memory array then.The 3rd semiconductor chip 54 is laminated on second semiconductor chip 53, and the second A/D converter array is electrically connected with the memory cell arrays of the 3rd semiconductor chip 54 via connecting contact site 84.Like this, just obtain the semiconductor image sensor module that possesses cmos image sensor 51 of purpose.

According to the manufacture method of present embodiment semiconductor image sensor module, because first semiconductor chip 52 has mainly formed the rear surface irradiation type cmos image sensor, so the change of the aperture opening ratio of photodiode is big, even fine pixel also can be sought high sensitivity.And first, second with the

3rd semiconductor chip

52,53 and 54 is laminated and by miniature protrusion 83 with connect contact site 84 and carry out mutual electrical connection, so can set for interconnective distribution the shortest, can put aside the data of photodiode to memory cell arrays at high speed, can be simultaneous shutter operation by all.Therefore, can make the high sensitivity that possesses cmos image sensor and the semiconductor image sensor module of electronics shading simultaneously.

The surface sides of first semiconductor chip 52 that has formed cmos image sensor is connected down, and laminated second semiconductor chip 53 that is formed with the A/D converter array, but also can carry out first semiconductor chip 52 with the perforation contact site that is connected by perforation second semiconductor chip 53 of second semiconductor chip 53 in addition.

The semiconductor image sensor module 99 of Fig. 6 second embodiment also can be made with same manufacture method shown in Figure 25 with basic.

The semiconductor image sensor module 100 of Figure 22 the 3rd embodiment also can be in the operation of Figure 25 B, on the pad of the 4th semiconductor chip 55 that is formed with the analogue type nonvolatile memory, miniature protrusion is set, the 4th semiconductor image sensor module 55 is connected with first semiconductor chip 52 with facing down and makes.

Figure 27 A and Figure 27 B represent the schematic configuration of semiconductor image sensor module the 4th embodiment of the present invention.The semiconductor image sensor module 166,167 of present embodiment and above-mentionedly similarly laminatedly have: first semiconductor chip 52, its a plurality of pixels rule assortments and possess by the photodiode that constitutes each pixel and form the cmos image sensor 60 that zone 57 and transistor formation region territory 56 constitute; Second semiconductor chip 53, it possesses the A/D converter array that is made of a plurality of A/D converters; The 3rd semiconductor chip 54, it possesses the memory cell arrays that possesses encoder and sense amplifier at least.

First semiconductor chip

52 and 53 connections that form mutually of second semiconductor chip are with for example being electrically connected via protruding (miniature protrusion) 83 between the pad 81,82.And second semiconductor chip 53 and the 3rd semiconductor chip 54 are electrically connected A/D converter via the perforation contact site 84 that second semiconductor chip 53 is connected with memory component.Present embodiment side below second semiconductor chip 53 is formed with A/D converter 87.

The semiconductor image sensor module 166 of Figure 27 A is not connecting that contact site 84 directly is connected with pad 82 but from the example that just departs from formation of pad 82.Promptly this semiconductor image sensor module 166 is suitable for not connecting the situation that contact site 84 directly is connected with pad 82.

The semiconductor image sensor module 167 of Figure 27 B is to be formed on the example that pad 82 is just being gone up connecting contact site 84.Figure 27 B is an ideograph, and what see is to have A/D converter 87 between perforation contact site 84 and pad 82, directly is connected with pad 82 but in fact connect contact site 84, is connecting the form that forms A/D converter on every side of contact site 84.That is, be suitable for will be connecting the situations that contact site 84 directly is connected with pad 82 for this semiconductor image sensor module 167.

According to the semiconductor image sensor module 166,167 of Figure 27 A and Figure 27 B the 4th embodiment, can not pick up perforation contact site 84 noise ground signal is transmitted to A/D converter 87.

Figure 28 A and Figure 28 B represent the schematic configuration of semiconductor image sensor module the 5th embodiment of the present invention.The semiconductor image sensor module 168,169 of present embodiment and above-mentionedly similarly laminatedly have: first semiconductor chip 52, its a plurality of pixels rule assortments and possess by the photodiode that constitutes each pixel and form the cmos image sensor 60 that zone 57 and transistor formation region territory 56 constitute; Second semiconductor chip 53, it possesses the A/D converter array that is made of a plurality of A/D converters; The 3rd semiconductor chip 54, it possesses the memory cell arrays that possesses encoder and sense amplifier at least.

First semiconductor chip

52 and 53 connections that form mutually of second semiconductor chip are with for example being electrically connected via protruding (miniature protrusion) 83 between the pad 81,82.And second semiconductor chip 53 and the 3rd semiconductor chip 54 are electrically connected A/D converter via the perforation contact site 84 that second semiconductor chip 53 is connected with memory component.Present embodiment is formed with A/D converter 87 at the upper face side of second semiconductor chip 53.Each picture element signal from first semiconductor chip 52 carries out mould/number conversion by connecting contact site 84 by A/D converter 87.

The semiconductor image sensor module 168 of Figure 28 A is not connecting that contact site 84 directly is connected with pad 82 but from the example that just departs from formation of pad 82.At this moment side forms the wiring layer 170 that is connected with pad 82 below second semiconductor chip 53, via this wiring layer 170 pad 82 is electrically connected with perforation contact site 84.That is, this semiconductor image sensor module 168 is suitable for not connecting the situation that contact site 84 directly is connected with pad 82.

The semiconductor image sensor module 169 of Figure 28 B is to be formed on the example that pad 82 is just being gone up connecting contact site 84.Figure 28 B is an ideograph, and with similarly above-mentioned, the A/D converter 87 central portion ground that perforation contact site 84 is positioned at upper face side are connected with A/D converter 87.Promptly be suitable for will be connecting the situations that contact site 84 directly is connected with pad 82 for this semiconductor image sensor module 169.

The following side distortion that the semiconductor image sensor module 168,169 of Figure 28 A and Figure 28 B the 5th embodiment is useful in second semiconductor chip 53 side greatly and below is difficult to form the situation of A/D converter 87.

Figure 29 A and Figure 29 B represent the schematic configuration of semiconductor image sensor module the 6th embodiment of the present invention.The semiconductor image sensor module 187,188 of present embodiment and above-mentionedly similarly laminatedly have: first semiconductor chip 52, its a plurality of pixels rule assortments and possess by the photodiode that constitutes each pixel and form the cmos image sensor 60 that zone 57 and transistor formation region territory 56 constitute; Second semiconductor chip 53, it possesses the A/D converter array that is made of a plurality of A/D converters; The 3rd semiconductor chip 54, it possesses the memory cell arrays that possesses encoder and sense amplifier at least.

First semiconductor chip

52 and 53 connections that form mutually of second semiconductor chip are with for example being electrically connected via protruding (miniature protrusion) 83 between the pad 81,82.And second semiconductor chip 53 and the 3rd semiconductor chip 54 engage via the perforation contact site 84 that second semiconductor chip 53 is connected, so that A/D converter is electrically connected with memory component.Present embodiment side below the 3rd semiconductor chip 54 is formed with memory array block 88.By the A/D converter array institute mould/number conversion of second semiconductor chip 53 signal remembered in memory array block 88.

The semiconductor image sensor module 187 of Figure 29 A is the perforation contact sites in second semiconductor chip 53 84 directly not to be connected with pad 82 but from the example that just departs from formation of pad 82.At this moment side forms the wiring layer 170 that is connected with pad 82 below second semiconductor chip 53, via this wiring layer 170 pad 82 is electrically connected with perforation contact site 84.Promptly this semiconductor image sensor module 187 is suitable for situation about the perforation contact site in second semiconductor chip 53 84 directly not being connected with pad 82.

The semiconductor image sensor module 188 of Figure 29 B is that the perforation contact site 84 in second semiconductor chip 53 is formed on the example that pad 82 is just being gone up.That is, this semiconductor image sensor module 1 88 is suitable for the situations that will directly be connected the perforation contact sites in second semiconductor chip 53 84 with pad 82.

The upper face side distortion that the semiconductor image sensor module 187,188 of Figure 29 A and Figure 29 B the 6th embodiment is useful in the 3rd semiconductor chip 54 side situation that is difficult to form memory array block 88 greatly and in the above is suitable.

Figure 30 A and Figure 30 B represent the summary of semiconductor image sensor module the 7th embodiment of the present invention.The semiconductor image sensor module 189,190 of present embodiment and above-mentionedly similarly laminatedly have: first semiconductor chip 52, its a plurality of pixels rule assortments and possess by the photodiode that constitutes each pixel and form the cmos image sensor 60 that zone 57 and transistor formation region territory 56 constitute; Second semiconductor chip 53, it possesses the A/D converter array that is made of a plurality of A/D converters; The 3rd semiconductor chip 54, it possesses the memory cell arrays that possesses encoder and sense amplifier at least.First semiconductor chip 52 and 53 connections that form mutually of second semiconductor chip are with for example being electrically connected via protruding (miniature protrusion) 83 between the pad 81,82.And second semiconductor chip 53 and the 3rd semiconductor chip 54 are via the perforation contact site 84 that second semiconductor chip 53 is connected with the perforation contact site 84 of the 3rd semiconductor chip 53 perforations ' engage, so that A/D converter is electrically connected with memory component.Present embodiment is formed with memory array block 88 at the upper face side of the 3rd semiconductor chip 54, connects contact sites 84,84 ' ground connection is connected to two.By the A/D converter array institute mould/number conversion of second semiconductor chip 53 signal remember in memory array block 88 by connecting contact site 84 and 84 ' quilt.

The semiconductor image sensor module 189 of Figure 30 A be not with the 3rd semiconductor chip 54 in second semiconductor chip 53 of perforation contact site 84 ' is connected in direct be connected with pad 82 but of perforation contact site 84 from the example that just departs from formation of pad 82.At this moment side forms the wiring layer 170 that is connected with pad 82 below second semiconductor chip 53, via this wiring layer 170 pad 82 is electrically connected with perforation contact site 84.Promptly this semiconductor image sensor module 189 is suitable for situation about the perforation contact site in second semiconductor chip 53 84 directly not being connected with pad 82.

The semiconductor image sensor module 190 of Figure 30 B be with the 3rd semiconductor chip 54 in the interior perforation contact site 84 of second semiconductor chip 53 of perforation contact site 84 ' is connected be formed on the example that pad 82 is just being gone up.That is, this semiconductor image sensor module 190 is applicable to the situations that will directly be connected the perforation contact sites in second semiconductor chip 53 84 with pad 82.

The following side strain that the semiconductor image sensor module 189,190 of Figure 30 A and Figure 30 B is useful in the 3rd semiconductor chip 54 side situation that is difficult to form memory array block 88 greatly and below is suitable.

Figure 31 A and Figure 31 B represent the summary of semiconductor image sensor module the 8th embodiment of the present invention.The semiconductor image sensor module the 191, the 192nd of present embodiment is first semiconductor chip 52 and the laminated structure of second semiconductor chip 193.First semiconductor chip 52 is the rule assortments of a plurality of pixels and possess by the photodiode that constitutes each pixel and form the cmos image sensor 60 that zone 57 and transistor formation region territory 56 constitute.Second semiconductor chip 193 possesses the A/D converter array that is made of a plurality of A/D converters in lower side, and possesses the memory cell arrays that possesses encoder and sense amplifier at least in upper side.Second semiconductor chip 193 is formed with the perforation contact site 84 of A/D converter array region via perforation and A/D converter is electrically connected with memory component.

The semiconductor image sensor module 191 of Figure 31 A is formation pad 82 below second semiconductor chip 193, formation pad 81 on first semiconductor chip 52 makes first semiconductor chip 52 and second semiconductor chip 193 are added thermo-compressed with being connected between two pads 82 and 81.Zone beyond the

pad

81,82 is undertaken bonding by adhesives, then more strengthen the adhesive strength between first and

second semiconductor chip

52 and 193.

The semiconductor image sensor module 192 of Figure 31 B does not form pad, but form zone formation perforation contact site 84 at the A/D converter array of second semiconductor chip, 193 lower side, form contact sites 84 in the transistor formation region territory 56 of first semiconductor chip 52 ".Semiconductor image sensor module 192 is this two

contact site

84 and 84 " to be docked and adds thermo-compressed and first semiconductor chip 52 is connected with second semiconductor chip 193.

Figure 32 represents semiconductor image sensor module the 9th embodiment summary of the present invention with its manufacture method.At first shown in Figure 32 A, the semiconductor image sensor module 194 of present embodiment is formed with first semiconductor chip 52 and second semiconductor chip 193.First semiconductor chip 52 is the rule assortments of a plurality of pixels and possess by the photodiode that constitutes each pixel and form the cmos image sensor 60 that zone 57 and transistor formation region territory 56 constitute, and on transistor formation region territory 56 formation pad 81.Second semiconductor chip 193 possesses the A/D converter array that is made of a plurality of A/D converters in lower side, and possesses the memory cell arrays that possesses encoder and sense amplifier at least in upper side.This second semiconductor chip 193 formation pad 82 below the lower side that is formed with the A/D converter array forms the perforation contact site 84 that connects lower side, and via wiring layer 170 pad 82 is connected with perforation contact site 84.

Shown in Figure 32 B, the pad 82 of the pad 81 of first semiconductor chip 52 and second semiconductor chip 193 is added the thermo-compressed joint then via protruding (miniature protrusion) 83.Utilize this protrusion 83 can carry out the connection arranged side by side of a plurality of pixel units.Make the semiconductor image sensor module 194 of the 9th embodiment like this.

The manufacture method of Figure 33 presentation graphs 31A semiconductor image sensor module 191.At first shown in Figure 33 A, form first semiconductor chip 52 and second semiconductor chip 193.First semiconductor chip 52 is the rule assortments of a plurality of pixels and possess by the photodiode that constitutes each pixel and form the cmos image sensor 60 that zone 57 and transistor formation region territory 56 constitute, and on transistor formation region territory 56 formation pad 81.Second semiconductor chip 193 possesses the A/D converter array that is made of a plurality of A/D converters in lower side, and possesses the memory cell arrays that possesses encoder and sense amplifier at least in upper side.This second semiconductor chip 193 formation pad 82 below the lower side that is formed with the A/D converter array forms the perforation contact site 84 that connects lower side, and via wiring layer 170 pad 82 is connected with perforation contact site 84.

Shown in Figure 33 B, make mutual pad 81 be connected ground with 82 butt joints first semiconductor chip 52 and second semiconductor chip 193 are added the thermo-compressed joint then.By the connection arranged side by side that can count pixel unit to the little of

pad

81,82 formation.Zone beyond

pad

81,82 join domains is undertaken bonding by adhesives, then more strengthen adhesive strength.Come the semiconductor image sensor module 191 of shop drawings 31A like this.

The manufacture method of Figure 34 presentation graphs 31B semiconductor image sensor module 192.At first shown in Figure 34 A, form first semiconductor chip 52 and second semiconductor chip 193.First semiconductor chip 52 is the rule assortments of a plurality of pixels and possess by the photodiode that constitutes each pixel and form the cmos image sensor 60 that zone 57 and transistor formation region territory 56 constitute, and transistor formation region territory 56 in formation contact site 84 ".Second semiconductor chip 193 possesses the A/D converter array that is made of a plurality of A/D converters in lower side, and possesses the memory cell arrays that possesses encoder and sense amplifier at least in upper side.This second semiconductor chip 193 forms the perforation contact site 84 that connects it in the lower side that is formed with the A/D converter array.First and second semiconductor chips 52,193 are not formed with pad.

" 84 butt joints are connected ground first semiconductor chip 52 and second semiconductor chip 193 are added the thermo-compressed joint with the perforation contact site shown in Figure 34 B, to make mutual contact site 84 then.Come the semiconductor image sensor module 192 of shop drawings 31B like this.Though this manufacture method location is difficult, the pixel count of per unit area can be set at most.In the embodiment of Figure 34, the height above second semiconductor chip below first semiconductor chip of Figure 34 semiconductor image sensor module 192 can be set minimum at Figure 32.

Figure 35～Figure 37 represents the summary of semiconductor image sensor module the tenth embodiment of the present invention～the 12 embodiment with its manufacture method.The semiconductor image sensor module of the tenth embodiment～the 12 embodiment in be provided with first semiconductor chip 196 that photodiode forms zone 57, transistor formation region territory 56 and A/D converter array 195 and engage with second semiconductor chip 197 that is formed with memory array.In first semiconductor chip 196, A/D converter array 195 is connected with transistor formation region territory 56 sides.By this structure, the noise ground that the analog signal that can make photodiode form zone 57 generations is not for example picked up Figure 32 B protrusion (miniature protrusion) 83 is converted to digital signal by A/D converter.Therefore, noise is few in the final picture output signal.

Figure 35 represents the semiconductor image sensor module of the tenth embodiment.The semiconductor image sensor module 198 of present embodiment is formed with first semiconductor chip 196 and second semiconductor chip 197.Be provided with in first semiconductor chip 196: form zone 57 and cmos image sensor that is constituted in the transistor formation region territory 56 that mid portion forms and the A/D converter array 195 that forms in upper side by the photodiode that forms in lower side.And, form and connect the pad 81 that contact site 84 is connected in the above being formed with the zone formation perforation contact site 84 of A/D converter array 195.Second semiconductor chip 197 is formed with memory array, forms pad 82 below.

Then shown in Figure 35 B, between

pad

81 and 82, form and protrude (miniature protrusion) 83 and first semiconductor chip 196 and second semiconductor chip 197 are added thermo-compressed engage.Make the semiconductor image sensor module 198 of the tenth embodiment like this.This semiconductor image sensor module 198 utilizes and protrudes 83 and the connection arranged side by side that can count pixel unit.

Figure 36 represents the semiconductor image sensor module of the 11 embodiment.The semiconductor image sensor module 199 of present embodiment is such and above-mentioned first semiconductor chip 196 and second semiconductor chip 197 of similarly forming shown in Figure 36 A at first.The structure of first semiconductor chip 196 and second semiconductor chip 197 is identical with Figure 35, so pay prosign and detailed on the part of correspondence.

Shown in Figure 36 B, make mutual pad 81 be connected ground with 82 butt joints then first semiconductor chip 196 and second semiconductor chip 197 are added the thermo-compressed joint.Make the semiconductor image sensor module 199 of the 11 embodiment like this.This semiconductor image sensor module 199 utilizes and forms

pad

81 and 82 for a short time and can count the arranged side by side of pixel unit and be connected.And the zone beyond

pad

81 and 82 join domains is undertaken bonding by adhesives, then can more strengthen the adhesive strength between first and

second semiconductor chip

196 and 197.

Figure 37 represents the semiconductor image sensor module of the 12 embodiment.The semiconductor image sensor module 200 of present embodiment is such and above-mentioned first semiconductor chip 196 and second semiconductor chip 197 of similarly forming shown in Figure 37 A at first.First semiconductor chip 196 other structure with Figure 35 except not forming pad is identical, so pay prosign and detailed on the part of correspondence.Second semiconductor chip 197 is formed with memory array, and faces and form contact site 201 followingly.The form of contact site 201 can have various considerations, for example also can form with connecting.Do not form pad on this second semiconductor chip 197.

Shown in Figure 37 B, make perforation contact site 84 be connected ground with contact site 201 butt joints then first semiconductor chip 196 and second semiconductor chip 197 are added the thermo-compressed joint.Make the semiconductor image sensor module 200 of the 12 embodiment like this.Though the manufacture method of the semiconductor image sensor module 200 of the 12 embodiment location is difficult, the pixel count of per unit area can be set at most.In the tenth embodiment～the 12 embodiment, the height above second semiconductor chip 197 below first semiconductor chip 196 of the second embodiment semiconductor image sensor module 200 can be set minimum for.

The following describes the 13 embodiment of semiconductor image sensor module of the present invention.The semiconductor image sensor module of present embodiment is to spread with the common structure of a plurality of pixels floating in its transistor formation region territory in each above-mentioned embodiment.Can increase the photodiode area of per unit elemental area like this.

And in the transistor formation region territory, spread can also set on the common basis of a plurality of pixels amplifier transistor also with the common structure of a plurality of pixels floating.So more can increase the photodiode area of per unit elemental area.

Equivalent circuit in pixel when Figure 38 is illustrated in the transistor formation region territory with four pixels share pixel transistor circuits parts.

This equivalence circuit possesses separately the transmission transistor 212 corresponding with four light accepting parts (photodiode PD) 210 of four pixels, these are transmitted transistors 212 be connected with common unsteady diffusion (FD) portion, shared an amplifier transistor 214 and a reset transistor 220 etc. after it.Signal charge is connected with output line via amplifier transistor 214.The transmission transistor is set between amplifier transistor 214 and output line, can also carries out switch to output to output line.

This diffusion of floating can be useful in the rear surface irradiation type cmos image sensor of the present invention with the common structure of a plurality of pixels.For example need under the situation of four elemental areas at miniature protrusion, then common with four pixels float diffusion FD, amplifier transistor 214 and reset transistor 220.Like this, even when the needed area of miniature protrusion is big, also can not need to space required that should miniature protrusion with big area design a pixel just can, therefore, can obtain the pixel count of per unit area.

Above-mentioned situation when being illustrated in the transistor formation region territory, but situation also can consider in the transistor formation region territory with three pixels share pixel transistor circuits parts time the or the situation during with six pixels share pixel transistor circuits parts in the transistor formation region territory with four pixels share pixel transistor circuits parts.

The following describes the 14 embodiment of semiconductor image sensor module of the present invention.The semiconductor image sensor module of present embodiment is to utilize the structure of the coloud coding technology of pixel arrangement engrail (so-called oblique assortment).This pixel assortment structure is compared the per unit elemental area with square pixel assortment imaginary pixel count increases.Can be useful in this pixel assortment in the rear surface irradiation type cmos image sensor of the present invention.For example when miniature protrusion needs the area of a plurality of pixel portion, as above-mentioned the 13 embodiment, need only unsteady diffusion FD common with a plurality of pixels, even it is also passable that the space required of corresponding miniature protrusion does not design a pixel with big area, therefore, can win the pixel count of per unit area, and compare with square pixel assortment, the imaginary pixel count of per unit elemental area increases.

Figure 39 represents that the fourteenth embodiment of the invention semiconductor image sensor module is the schematic configuration of rear surface irradiation type cmos image sensor.The semiconductor image sensor of present embodiment is not use the example that colour filter carries out the look separation on the sheet.The semiconductor image sensor 261 of present embodiment comprises: the selection of the camera watch region that becomes the light area 264 of a plurality of pixels 263 plane assortments that form on same semiconductor chip 262 (being the equal of first semiconductor chip 52) surface and the pixel 263 in the outside that is configured in this camera watch region 264 and the peripheral circuit 265,266 that is used to carry out signal output.Peripheral circuit 265,266 can not form in regional 57 at above-mentioned photodiode yet, but in transistor formation region territory 56.A peripheral circuit 265 is made of the vertical scanning circuit that is positioned at camera watch region 264 sides (so-called vertical register circuit).Another peripheral circuit 266 was made of (comprising signal amplification circuit, A/D change-over circuit, synchronous signal generating circuit etc.) such as horizontal scanning circuit that is positioned at camera watch region 264 downsides (so-called horizontal register circuit) and output circuits.

A plurality of pixels are by so-called oblique assortment in the camera watch region 264.That is, include: first pixel groups, a plurality of pixel 263A on its plane become clathrate with the spacing W1 general arrangement of stipulating respectively in the horizontal direction with on the vertical direction; Second pixel groups, its relative first pixel groups is all come a plurality of pixel 263B of configuration plane with the state of roughly 1/2 the spacing of the described spacing W1 that only staggers in the horizontal direction with on the vertical direction, and pixel 263A, 263B are formed the oblique square lattice shape that staggers just by assortment.In this example pixel 263B by assortment in the odd-numbered line and 1/2 spacing that staggers, pixel 263A by assortment in even number line.Colour filter is used red (R), green (G), blue (B) primary color filter in this example on the sheet.R/B mark among Figure 39 represent red (R) or blue (B) any.That is, red (R) and blue (B) is vertically red (R)-Lan (B)-red (R)-Lan (B) in Figure 39 ... ground replaces assortment.

The following describes the 15 embodiment of semiconductor image sensor module of the present invention.The semiconductor image sensor module of present embodiment is the example that the total ADC of pixel is installed.At this, represent the flowing of charge signal under the arbitrary embodiment situation of described first～the 14 embodiment.Having (the 13 embodiment) and sawtooth coding (the 14 embodiment) and a charge signal of exporting from the transistor formation region territory by the FD pixel sends in the AD conversion array.

Figure 40 is the solid camera head that expression the 15 embodiment semiconductor image sensor module is suitable for, and the block diagram of the cmos image sensor structure of pixel ADC arranged side by side for example is installed.

As shown in figure 40, the cmos image sensor 310 of present embodiment comprises: unit picture element 311 ranks shapes (rectangular array shape) ground level that comprises photo-electric conversion element is disposed a plurality of pixel array unit 312, row or unit picture element scanning circuit 313, row handling part 314, reference voltage supply unit 315, row or unit picture element scanning circuit 316, horizontal output line 317 and sequential control circuit 318.

In this system configuration, sequential control circuit 318 generates the clock signal that becomes the row or the action benchmark of unit picture element scanning circuit 313, row or unit picture element handling part 314, reference voltage supply unit 315 and row or unit picture element scanning circuit 316 etc. and control signal etc. according to main pulse MCK, and provides to row or unit picture element scanning circuit 313, row handling part 314, reference voltage supply unit 315, row or unit picture element scanning circuit 316 etc.

The peripheral drive system of drive controlling pixel array unit 312 constituent parts pixels 311 and signal processing system at once or unit picture element scanning circuit 313, reference voltage supply unit 315, row or unit picture element scanning circuit 316 and sequential control circuit 318 etc. be gathered in pixel array unit 312 same chips (being the equal of first semiconductor chip 52) 319 on transistor formation region territory 356 in.

Be omitted diagram as unit picture element 311 at this, have but on the basis of photo-electric conversion element (for example photodiode), for example can use: the transmission transistor that the electric charge that has been carried out opto-electronic conversion by this photo-electric conversion element and obtained is transmitted to FD (float diffusion) portion, control this FD portion current potential reset transistor, according to three transistor arrangements of the amplifier transistor of the current potential output signal of FD, and can further use and have transistorized four transistor arrangements of selection that are used to carry out pixel selection etc. in addition.

Unit picture element 311 is only become the capable part of m row n by planar configuration in the pixel array unit 312, and for the pixel arrangement of the capable n of this m row go by every row or per unit pixel or unit picture element control line 321 (distribution of 321-1～321-n) is listed as or the unit picture element control line 322 (distribution of 322-1～322-m) by every row or per unit pixel.Or also can carry out the distribution of pixel control line by every pixel for the pixel arrangement of the capable n of this m row, control every pixel like this.Each end of row control line 321-1～321-n is connected with each output corresponding to line-scan circuit 313 each row.Row or unit picture element scanning circuit 313 are made of shift register etc., carry out the control of row in the pixel array unit 312 or unit picture element address and row or unit picture element scanning via row or unit picture element control line 321-1～321-n.Row or unit picture element handling part 314 for example have the pixel column of array part 312 according to pixels or ADC (analog to digital converter) 323-1～323-m that the per unit pixel promptly is provided with by row or per unit pixel signal line 322-1～322-m, are converted into digital signal and output from the constituent parts pixel 311 of pixel array unit 312 to the analog signal of row or the output of per unit pixel.

Present embodiment is narrated its details to the structure of these ADC323-1～323-m in the back as characteristics.

Reference voltage supply unit 315 for example has DAC (D-A converting circuit) 351 as the mechanism of the so-called slope (RAMP) of the generation that makes the skewed variation of level along with the process of time waveform reference voltage Vref.Be not limited to DAC351 as the mechanism that generates ramp waveform reference voltage Vref.DAC351 is under the control of the control signal CS1 that gives from sequential control circuit 318, the clock pulse CK that gives according to this sequential control circuit 318 generates ramp waveform reference voltage Vref, and supplies with to the ADC323-1～323-m of row or unit picture element handling part 314.

Specify the details of the ADC323-1～323-m structure of present embodiment characteristics at this.Common picture rate mode under each of ADC323-1～323-m and the scan mode gradually that all information of unit picture element 311 are read is compared during with picture rate mode usually; can access and selectively carry out the AD switching motion, this AD switching motion improves N times of for example each pattern of the high speed picture rate mode of twice to picture speed corresponding to setting the time for exposure of unit picture element 311 for 1/N.The switching of this pattern is carried out by the control signal CS2 that gives from sequential control circuit 318, the control of CS3.For sequential control circuit 318 are indication informations that system controller (not shown) from the outside is used to switch common picture rate mode and each pattern of high speed picture rate mode.

All ADC323-1～323-m are same structures, are configured to the AD conversion array in above-mentioned first semiconductor chip 52 or second semiconductor chip.But also can row or unit picture element handling part 314, comparator 331, counting device for example lifting/lowering counter (note is made U/DCNT among the figure) 332, transmit the AD conversion array that switch 333, storage device 334, DAC351, reference voltage supply unit 315 and sequential control circuit 318 are configured to first semiconductor chip 52 or second semiconductor chip.And also can be provided with in the transistor formation region territory 56 of above-mentioned first semiconductor chip 52 outside reference voltage supply unit 315, row or unit picture element scanning circuit 316 and the sequential control circuit 318, reference voltage supply unit, row or unit picture element scanning circuit and sequential control circuit are configured to the AD conversion array in first semiconductor chip 52 or second semiconductor chip.

Fall out or the per unit pixel has illustrated ADC323-m in this measure.ADC323-m become have comparator 331, counting device for example lifting/lowering counter (among the figure note do U/DCNT) 332, transmit the structure of switch 333 and storage device 334.

The row that comparator 331 is relatively more corresponding with the signal of exporting from pixel array unit 312 n row constituent parts pixels 311 or the signal voltage Vx of unit picture element holding wire 322-m and the ramp waveform reference voltage Vref of supplying with from reference voltage supply unit 315, for example when reference voltage Vref is bigger than signal voltage Vx, then export Vco and become " H " level, when signal voltage Vx is following, then export Vco when reference voltage Vref and become " L " level.

It is out-of-sync counter that lifting/lowering is counted device 332, under the control of the control signal CS2 that sequential control circuit 318 gives, from sequential control circuit 318 clock pulse CK and DAC351 are given simultaneously, synchronously fall (DOWN) counting with this clock pulse CK or rise (UP) and measure from the comparison of comparator 331 and begin to the comparison time of comparison end of a period.Be exactly common picture rate mode specifically carry out the action that signal reads from a unit picture element 311; by when for the first time reading action, falling the comparison time of measuring when reading for the first time, measure comparison time when reading the second time by when reading for the second time action, carrying out rising counting.On the other hand, high speed picture rate mode keeps motionless to count results for the unit picture element 311 of certain row, when reading for the first time action, fall the comparison time of measuring when reading for the first time according to the count results of last time for the unit picture element 311 of next line then, when reading for the second time action, carry out rising counting and measure comparison time when reading the second time.

Transmit switch 333 under the control of the control signal CS3 that sequential control circuit 318 gives; usually the picture rate mode is counted the moment point that action is over and is become out (closing) state counting device 332 for unit picture element 311 of certain row by lifting/lowering, and the count results of this lifting/lowering being counted device 332 transmits to storage device 334.For example the high speed picture speed of N=2 is counted the moment point that is over of action and is become that to close (opening) state constant counting device 332 for unit picture element 311 of certain row by lifting/lowering on the other hand, count the moment point that action is over and become out state counting device 332 by lifting/lowering then, this lifting/lowering is counted device 332 transmit to storage device 334 for the count results of vertical two pixel portion for the unit picture element 311 of next line.Like this, the analog signal of supplying with to row or per unit pixel via row or unit picture element holding wire 322-1～322-m from the constituent parts pixel 311 of pixel array unit 312, (comparator 331 and lifting/lowering are counted each action of device 332 among the 323-1～323-m) by ADC323, be converted into the digital signal of N position, and be contained in storage device 334 (among the 334-1～343-m).

Row or unit picture element scanning circuit 316 are made of shift register etc., be listed as or unit picture element handling part 314 in the row of ADC323-1～323-m or the control of unit picture element address and row or unit picture element scanning.Under the control of these row or unit picture element scanning circuit 316, carried out the digital signal of the N position of AD conversion by each ADC323-1～323-m and sequentially read, and exported as camera data via this horizontal output line 317 by horizontal output line 317.

Owing to do not have direct correlation with present embodiment, thus not special diagram, but also can be being arranged on for the circuit of implementing various signal processing via the camera data of horizontal output line 317 outputs etc. beyond the said structure element.The cmos image sensor 310 that row or unit picture element ADC arranged side by side are installed of said structure present embodiment, owing to can transmit the count results of lifting/lowering counter 332 to storage device 334 selectively via transmitting switch 333, can control independently the action of the counting of lifting/lowering counter 332 with the action that the count results of this lifting/lowering counter 332 is read to horizontal output line 317.

Use the action of sequential chart explanation said structure the 15 Embodiment C mos image sensor 310 of Figure 41 below.

Omit about unit picture element 311 concrete explanations of moving at this, but as known, unit picture element 311 carries out homing action and transmits action, the current potential of the FD portion of homing action when resetting to the regulation current potential as the composition that resets from unit picture element 311 to row or unit picture element holding wire 322-1～322-m output, the current potential that transmits the FD portion of action when the electric charge that is carried out opto-electronic conversion by photo-electric conversion element is transmitted as signal component from unit picture element 311 to row or unit picture element holding wire 322-1～322-m output.

By row or the row that carries out of unit picture element scanning circuit 313 or unit picture element scanning is gone or unit picture element i is selected, the unit picture element 311 of selecteed row or unit picture element i from this to the first time that row or unit picture element holding wire 322-1～322-m carry out read action stable after, from DAC351 waveform reference voltage Vref each comparator 331 to ADC323-1～323-m in ramp is provided, be listed as by comparator 331 like this or each the signal voltage Vx of unit picture element holding wire 322-1～322-m and the comparison of reference voltage Vref.Also give lifting/lowering counter 332 clock pulse CK from sequential control circuit 318 when giving comparator 331 reference voltage Vref, the counting that is fallen by this lifting/lowering counter 332 moves the comparison time at comparator 331 of measuring when reading for the first time action.

When reference voltage Vref equated with the signal voltage Vx of row or unit picture element holding wire 322-1～322-m, the output Vco of comparator 331 overturn to " L " level from " H " level.Accept the upset of these comparator 321 output Vco polarity, lifting/lowering counter 332 stops to fall the counting action, and keeps comparator 331 according to the count value between the comparable period first time.As previously mentioned, this primary read the action composition Δ V that resets of unit picture element 311 is read.Contain the fixed pattern noise that per unit pixel 311 is departed from as biasing in this composition Δ V that resets.

But generally this departing from of composition Δ V that reset little, and reset level is that both full-pixel is common, so the signal voltage Vx of row or unit picture element holding wire 322-1～322-m is known substantially.Therefore, when reading, just can shorten between the comparable period composition Δ V that resets for the first time by adjusting reference voltage Vref.

The reset comparison of composition Δ V of present embodiment (128 clock) during the counting of 7 bit positions.Secondaryly read action and on the composition Δ V that resets, add the signal component Vsig that injects luminous flux according to per unit pixel 311, and carry out and the composition Δ V that resets for the first time reads the same action of action and reads.Promptly, the unit picture element 311 of selecteed row or unit picture element i from this to the second time that row or unit picture element holding wire 322-1～322-m carry out read action stable after, from DAC351 reference voltage Vref each comparator 331 to ADC323-1～323-m is provided, in comparator 331, be listed as like this or each the signal voltage Vx of unit picture element holding wire 322-1～322-m and the comparison of reference voltage Vref.Simultaneously counting the second time of carrying out measuring with for the first time opposite liter counting action this comparator 331 in the device 332 at lifting/lowering compares the time.

Counting action by lifting/lowering being counted device 332 is fallen the counting action, can automatically be carried out in this lifting/lowering is counted device 332 (for the second time between the comparable period) setting for the second time liter counting action for-subtraction process of (for the first time between the comparable period) setting for for the first time like this.When reference voltage Vref equated with the signal voltage Vx of row or unit picture element holding wire 322-1～322-m, the output Vco of comparator 331 carried out polarity upset, accepted this polarity upset and lifting/lowering is counted device 332 and stopped counting action.Consequently lifting/lowering is counted the count value of device 332 maintenances according to (for the second time between the comparable period)-(for the first time between the comparable period) subtraction process result.(for the second time between comparable period)-(for the first time between the comparable period)=(signal component Vsig+ reset composition Δ V+ADC323 biasing composition)-(the biasing composition of the composition Δ V+ADC323 that resets)=(signal component Vsig), by the subtraction process that above twice reading moved and lifting/lowering is counted device 332, outside the composition Δ V that resets that departs from containing of per unit pixel 311 is removed, (the biasing composition of 323-1～323-m) also is removed every ADC323, so only can take out the signal component Vsig that injects luminous flux according to per unit pixel 311.

At this, the processing that the composition Δ V that resets that containing of per unit pixel 311 departed from removes is that so-called CDS (Correlated Double Sampling, correlated double sampling) handles.Owing to when reading for the second time, be read out, so in order to judge that in the scope of broadness the size of luminous flux just need make reference voltage Vref change greatly according to the signal component Vsig that injects luminous flux.So the cmos image sensor 310 of present embodiment the counting that reads out in 10 bit positions of signal component Vsig during (1024 clock pulse) compare.Though it is at this moment different with secondary comparison figure place for the first time, but the ramp waveform gradient of reference voltage Vref is set for for the first time with for the second time identical, the precision of AD conversion is equated, can obtain correct subtraction process result so count the subtraction process result of (for the second time between the comparable period)-(for the first time between the comparable period) that device 332 carries out as lifting/lowering.

After above-mentioned a series of AD switching motion was ended, lifting/lowering was counted the digital value that is held the N position in the device 332.The digital value (digital signal) of having been carried out the N position of AD conversion by each ADC323-1～323-m of row handling part 314 is listed as or unit picture element scanning circuit 316 is listed as or unit picture element scanning, and exports to the outside in turn through the horizontal output line 317 of N position amplitude.Then by same action is carried out generating repeatedly plane picture at every row or unit picture element in turn.The cmos image sensor 310 that row or unit picture element ADC arranged side by side are installed of present embodiment, because each of ADC323-1～323-m has storage device 334, so can be on one side the capable unit picture element 311 of i by the digital value after the AD conversion to storage device 334 transmit and from horizontal output line 317 to outside output, on one side read action and the lifting/lowering of the capable unit picture element 311 of the parallel i+1 of implementation count and move.

According to present embodiment, the solid camera head that becomes digital value from unit picture element via the analog signal conversion of column signal line output and read, by digital value phase adduction between a plurality of unit picture elements is read, even then shortened the time for exposure of unit picture element, the result also can not reduce the amount of information of a Pixel Information, therefore, can not cause sensitivity and reduce, can seek high picture speedization.

The perforation contact site of above-mentioned all embodiment (first, second, third semiconductor chip in) or contact site 84 ", 201 can being combined to form by Cu, Al, W, WSi, Ti, TiN, silicide or they.

Figure 42 represents semiconductor image sensor module the 16 embodiment of the present invention.Figure 42 is the mode sectional drawing that expression is equipped with the semiconductor image sensor module structure of rear surface irradiation type CMOS solid-state imager.The semiconductor image sensor module 400 of present embodiment is for example installed on built-in inserted plate (Intermediate substrate) 403: the rear surface irradiation type CMOS solid-state imager that is provided with imaging pixels portion is sensor chip 401a and the signal processing chip 402 that is provided with peripheral circuit parts such as signal processing.

Sensor chip 401a forms interlayer insulating film 420 on supporting substrates 430, and imbeds wiring layer 421 in inside.Layer forms semiconductor layer 412 thereon, forms surface insulating film 411 on its surface.Be formed with the photodiode 414 and the test electrode 413 etc. that become photo-electric conversion element in the semiconductor layer 412.The relative semiconductor layer 412 of a part of imbedding wiring layer 421 becomes via the film formed grid of gate insulation, and constitutes MOS transistor 415.And be formed with and connect supporting substrates 430 and connect distribution 431, be formed on the surface of supporting substrates perforation distribution 431 from the outstanding projected electrode (protrusion) 432 in the surface of supporting substrates 430 with imbedding the supporting substrates that wiring layer 421 is connected.Protrude (miniature protrusion) the 432nd, wait the overshooting shape metal electrode that forms by electroplating on the little pad of the common pad electrode that in than wire-bonded, uses.

The sensor chip 401a of said structure just produces signal charge when photodiode 414 irradiations that light forms from surface insulating film 411 side direction semiconductor layers 412, and the so-called rear surface irradiation type CMOS solid-state imager of savings in photodiode.MOS transistor 415 has the signal charge of savings in photodiode 414 is transmitted and signal amplification or function such as reset to FD portion.Semiconductor layer obtains the back side filming of semiconductor substrate in the said structure, fits with supporting substrates 430 for substrate shape is stablized.

As mentioned above, the CMOS solid-state imager of present embodiment is: form to be connected with a plurality of pixels on a face of the semiconductor layer that is formed with a plurality of pixels that comprise photo-electric conversion element and field-effect transistor and imbed wiring layer and another face of semiconductor layer becomes sensitive surface, the backside illumination solid imaging apparatus of photo-electric conversion element.

Above-mentioned sensor chip 401a with the opposition side from the rayed side be supporting substrates 430 sides by flip-chip be installed in that the surface is formed with distribution 440 and on the built-in inserted plate 403 of the insulating barrier 441 of their insulation, and make and be exposed to the boss that a distribution surface part forms from the peristome of insulating barrier and engage with protrusion.

On the other hand, the signal processing chip 402 that is formed with peripheral circuit portion for example via protrude by with flip-chip be installed on the built-in inserted plate 403.

The semiconductor image sensor module 400 of this structure is installed on built-in inserted plate 403 and other installation base plates, for example is electrically connected use by wire-bonded 442 grades.For example on built-in inserted plate 403, connect the electrode PAD that the sensor chip (CMOS solid-state imager) 401a and 402 of signal processing chips can form evaluation single-chip function.

Figure 43 is the block diagram that imageing sensor (the being equivalent to semiconductor image sensor module) structure of present embodiment CMOS solid-state imager has been assembled in expression.Figure 44 is the equivalent circuit figure of expression present embodiment CMOS solid-state imager dot structure.The imageing sensor of present embodiment comprises: imaging pixels portion 512, V selection mechanism (vertical transfer registers) 514, H selection mechanism (horizontal transmission register) 516, timing sequencer (TG) 518, S/H-CDS (sampling of sampling maintenance-correlated double) circuit part 520, AGC portion 522, A/D converter section 524, digital enlarging section 526 etc.For example can be summarised on the chip sensor chip 401a to imaging pixels portion 512, V selection mechanism 514, H selection mechanism 516 and S/H-CDS circuit part 520, and remaining circuit part is summarised in the form of signal processing chip 402 as Figure 42.Or, also can on sensor chip 401a, only form imaging pixels portion 512.

In imaging pixels portion 512, the assortment of a plurality of pixel planes rectangular array shape, as shown in figure 44, it is photodiode (PD) 600 that each pixel is provided with the photo-electric conversion element that generates signal charge and savings according to light income, but also is provided with: the transmission transistor 620 that the signal charge of these photodiode 600 conversion savings is transmitted to the diffusion part (FD portion) 610 that floats, the reset transistor 630 that the voltage of FD portion 610 is resetted, the amplifier transistor 640 of the output signal that output is corresponding with FD portion 610 voltages, four MOS transistor of the output signal of this amplifier transistor 640 to selection (address) transistor 650 of vertical signal line 660 outputs.

In the pixel of this structure, the signal charge that has been carried out opto-electronic conversion by photodiode 600 is transmitted to FD portion 610 by transmitting transistor 220.FD portion 610 is connected with the grid of amplifier transistor 640, because amplifier transistor 640 constitutes the constant-current source 670 and the source follower of imaging pixels portion 512 outer setting, so when address transistor 650 is become ON, then the voltage corresponding with the voltage of FD portion 610 is exported to vertical signal line 660.And reset transistor 630 resets to not constant voltage (the driving voltage Vdd of Figure 44) with the signal change in electrical charge to the voltage of FD portion 610.The various driving distributions that are used for each MOS transistor of drive controlling in the imaging pixels portion 512 are by distribution in the horizontal direction, it is selected in turn that each pixel of imaging pixels portion 512 is pressed horizontal line (pixel column) unit in vertical direction by V selection mechanism 514, be used to control the MOS transistor of each pixel from the various pulse signals of timing sequencer 518, like this, the signal of each pixel is according to pixels read by S/H-CDS portion 520 by vertical signal line 660 with being listed as.

S/H-CDS portion 520 is provided with the S/H-CDS circuit by every pixel column of imaging pixels portion 512, carries out the signal processing of CDS (correlated double sampling) etc. for the picture element signal of reading from each pixel column of imaging pixels portion 512.H selection mechanism 516 is exported the picture element signal from S/H-CDS portion 520 to AGC portion 522.The gain controlling that AGC portion 522 stipulates for the picture element signal of being selected by H selection mechanism 516 from S/H-CDS portion 520, and this picture element signal to 524 outputs of A/D converter section.A/D converter section 524 is becoming digital signal and to 526 outputs of digital enlarging section from the picture element signal of AGC portion 522 from analog signal conversion.Necessary amplification and intermediate conversion are carried out for the digital signal output from A/D converter section 524 in numeral enlarging section 526, and the output of never illustrated outside terminal.Timing sequencer 518 is also supplied with various clock signals to above-mentioned imaging pixels portion's 512 each pixel each several part in addition.

The semiconductor image sensor module of above-mentioned the 16 embodiment (promptly, cmos image sensor) 400 unlike existing from the signal of pixel output after the output of pixel peripheral circuit again importing to signal processor from the output signal of chip periphery pad electrode, but can directly according to pixels unit or every a plurality of pixel unit be imported to signal processor via miniature protrusion the signal from the output of cmos image sensor pixel.Like this, the processes pixel speed between the device is fast, can provide high-performance and imageing sensor and signal processor single chip high performance device.And the aperture opening ratio of photodiode is enhanced, and the utilance of chip is enhanced, shading when can realize both full-pixel.

The following describes the manufacture method of the 16 embodiment rear surface irradiation type CMOS solid-state imager.At first shown in Figure 45 A, for example, on semiconductor substrate 410 surfaces that constitute by silicon etc., utilize thermal oxidation method or CVD (chemical vapor-phase growing method) method etc. to constitute, and in the operation of back, become the dielectric film 411 of surface insulating film by silica.And for example for example utilize applying method or epitaxial growth method etc. to form the semiconductor layer 412 of silicon etc. on the upper strata of dielectric film 411.And as SOI (semiconductor onins ulator) substrate.At this, on semiconductor layer 412, form test electrode 413 in advance.

Then shown in Figure 45 B, for example inject the conductive impurities of p type to form the pn knot to n type semiconductor layer 412 ions, so just in semiconductor layer 412, form photodiode 414 as photo-electric conversion element, and on the surface of semiconductor layer 412, form grid via gate insulating film, be connected with photodiode 414 grades and then form MOS transistor 415, and form a plurality of pixels of said structure.And for example form the interlayer insulating film 420 that covers MOS transistor.At this moment, while be embedded in the interlayer insulating film 420 and form imbedding wiring layer 421 in order on transistor, semiconductor layer 412, to connect.

Then shown in Figure 45 C, supporting substrates 430 for example by heat reactive resin is fitted and is made of silicon substrate or insulative resin substrate etc. on the upper strata of interlayer insulating film 420 as the thermo-compressed of bonding agent etc.

Then shown in 46A, for example by mechanical grinding etc. and from the opposition side of binding face supporting substrates 430 filmings.

Then shown in 46B, form the supporting substrates that connects supporting substrates 430 connect distribution 431 with imbed wiring layer 421 and be connected.The corrosion that this for example can form the resist film figure and carry out dry corrosion etc. by photo-mask process is imbedded the peristome of wiring layer 421 and low resistive metals such as copper is imbedded and formed and form to arrive on supporting substrates 430.

Shown in Figure 47 A, for example handle and form from the outstanding protrusion 432 in the surface of supporting substrates 430 then on the surface of supporting substrates perforation distribution 431 by metal-plated.

Shown in Figure 47 B, can make photodiode 414 be subjected to light up to for example semiconductor substrate 410 sides then semiconductor substrate 410 filmings from the SOI substrate.For example dielectric film 411 as stopper film, up to making dielectric film 411 carry out mechanical grinding or wet corrosion processing etc. from the rear side of semiconductor substrate 410 with exposing.The semiconductor layer 412 that so just becomes the SOI substrate is by residual structure.At this, the dielectric film 412 that exposes on the surface is called surface insulating film.It on the drawing diagram that relative Figure 47 A carries out upper and lower relation on the contrary.

As above then form rear surface irradiation type CMOS solid-state imager (sensor chip) 401a of present embodiment.Preferably further on the back side of the semiconductor substrate (semiconductor layer 412) that filming obtains, for example utilize the CVD method the dielectric film film forming.This dielectric film can also have concurrently the protection back side silicon face purpose and for the function that prevents reflectance coating of injecting light.

Rear surface irradiation type CMOS solid-state imager (sensor chip) 401a of above-mentioned such formation make on the sensitive surface side direction via being installed on the built-in inserted plate 03 with protruding 432 flip-chips.For example can stablize the temperature that is electrically connected, the protrusion on the boss on built-in inserted plate 403 distributions, protrusion and the sensor chip supporting substrates is carried out crimping each other with the low-melting temperature and the protrusion of the distribution of use in ratio sensor chip 401a, the signal processing chip 402.And for example also can be on signal processing chip 402 directly sensor installation chip 401a and modularization, at this moment also can similarly carry out with above-mentioned.

On the other hand, the signal processing chip 402 that is formed with peripheral circuit portion similarly via protrude by with flip-chip be installed on the built-in inserted plate 403.So just rear surface irradiation type CMOS solid-state imager (sensor chip) 401a is connected with signal processing chip 402 via built-in inserted plate 403 formed distributions.

As mentioned above, then can make the imageing sensor of having assembled present embodiment rear surface irradiation type CMOS solid-state imager.The circuit that can also use test after installing with flip-chip comes the test sensor chip with electrode 413.

According to the as above manufacture method of present embodiment rear surface irradiation type CMOS solid-state imager, at the applying supporting substrates and after having guaranteed intensity the semiconductor substrate filming, because supporting substrates filming and formation are connected distribution, so can be not do not take out electrode from supporting substrates, can easyly easily make and form the rear surface irradiation type CMOS solid-state imager that takes out electrode structure from the face of shadow surface opposition side from the back side power taking utmost point of semiconductor substrate.Owing to can on light is injected the supporting substrates side of face opposition side, form electrode, thus the degree of freedom of electrode configuration improve, can not damage cmos image sensor aperture opening ratio ground a plurality of miniature protrusions be formed on pixel just under or pixel peripheral just under.Like this, when the back side filming of semiconductor substrate, then can make high-performance, H.D device like this other semiconductor chips such as installation base plate such as the built-in inserted plate that is formed with protrusion and signal processing chips by being connected each other with protruding.

As semiconductor substrate preferably, for example as the SOI substrate, in substrate, be pre-formed oxide-film, in the filming of semiconductor substrate as the stopping layer and can use oxide-film in the SOI substrate of wet corrosion, owing to after filming, can obtain evenly smooth semiconductor substrate.

Figure 48 represents semiconductor image sensor module the 17 embodiment of the present invention.Figure 48 is the mode sectional drawing that expression is equipped with the semiconductor image sensor module structure of rear surface irradiation type CMOS solid-state imager.The semiconductor image sensor module 401 of present embodiment and the 16 embodiment similarly for example install on built-in inserted plate (Intermediate substrate) 403: the rear surface irradiation type CMOS solid-state imager that is provided with imaging pixels portion is sensor chip 401b and the signal processing chip 402 that is provided with peripheral circuit parts such as signal processing.

Sensor chip 401b forms interlayer insulating film 420 on supporting substrates 430, and imbeds wiring layer 421 in inside.Layer forms semiconductor layer 412 thereon, forms surface insulating film (411,419) on its surface.Be formed with photodiode 414 and test electrode 413 etc. in the semiconductor layer 412.The relative semiconductor layer 412 of a part of imbedding wiring layer 421 becomes via the film formed grid of gate insulation, so just constitutes MOS transistor 415.And be formed with connect semiconductor layer 412 and with imbed the semiconductor layer perforation distribution 416 that wiring layer 421 is connected.

And be formed with the supporting substrates perforation distribution 431 that connects supporting substrates 430, be formed on the surface that supporting substrates connects distribution 431 from the outstanding projected electrode (protrusion) 432 in the surface of supporting substrates 430.For example formation connects semiconductor layer 412 and connects the semiconductor layer insulating barrier perforation distribution 417 that distribution 431 is connected with interlayer insulating film 420 with supporting substrates on the other hand, and semiconductor layer connects distribution 416 and connects by the distribution 418 that is connected that forms on surface insulating film 411 with semiconductor layer insulating barrier perforation distribution 417.

Supporting substrates connect distribution 431 be as described above in the present embodiment via the semiconductor layer insulating barrier connect distribution 417, connect distribution 418, semiconductor layer connect distribution 416 and with imbed the structure that wiring layer 421 is connected, but be not limited thereto, also can be via the part in them or not via them and directly with imbed the structure that wiring layer 421 is connected.

The sensor chip 401b of said structure just produces signal charge when being photodiode 414 irradiations that form as light from surface insulating film (411,419) side direction semiconductor layer 412, and the structure of putting aside at photodiode.And this sensor chip 401b is a backside illumination solid imaging apparatus as described below, promptly, on a face of the semiconductor layer that is formed with a plurality of pixels that comprise photo-electric conversion element and field-effect transistor, form the wiring layer of imbedding that is connected with a plurality of pixels, and another face of semiconductor layer becomes the sensitive surface of photo-electric conversion element.

Above-mentioned sensor chip 401b from the opposition side of rayed side be supporting substrates 430 sides by flip-chip be installed in that the surface is formed with distribution 440 and on the built-in inserted plate 403 of the insulating barrier 441 of their insulation engage with protruding so that be exposed to boss that a distribution surface part forms etc. from the peristome of insulating barrier.

On the other hand, the signal processing chip 402 that is formed with peripheral circuit portion for example via protrude by with flip-chip be installed on the built-in inserted plate.The semiconductor image sensor module 401 of this structure is installed on built-in inserted plate 403 and other installation base plates, for example is electrically connected use by wire-bonded 442 grades.The structure of having assembled the structure of imageing sensor (being equivalent to semiconductor image sensor module) of present embodiment CMOS solid-state imager and pixel is identical with the 16 embodiment.

Above-mentioned the 17 embodiment semiconductor image sensor module (being cmos image sensor) 401 has the effect same with the 16 embodiment.

The following describes the manufacture method of the 17 embodiment rear surface irradiation type CMOS solid-state imager.At first shown in Figure 49 A, for example on semiconductor substrate 410 surfaces that constitute by silicon etc., utilize thermal oxidation method or CVD (chemical vapor-phase growing method) method etc. to constitute, and in the operation of back, become the dielectric film 411 of surface insulating film by silica.And for example for example utilize applying method or epitaxial growth method etc. to form the semiconductor layer 412 of silicon etc. on the upper strata of dielectric film 411.And as the SOI substrate.At this, on semiconductor layer 412, form test electrode 413 in advance.

Then shown in Figure 49 B, for example ion injects conductive impurities to form photodiode 414 at semiconductor layer 412 as photo-electric conversion element, and on the surface of semiconductor layer 412, form grid via gate insulating film, be connected with photodiode 414 grades and then form MOS transistor 415, and form a plurality of pixels of said structure.And for example form the interlayer insulating film 420 that covers MOS transistor.At this moment, while be embedded in the interlayer insulating film 420 and form imbedding wiring layer 421 in order to connect transistor AND gate semiconductor layer 412.

On the other hand, the surface from an interarea of the supporting substrates 430 that is made of silicon substrate or insulative resin substrate etc. forms the supporting substrates distribution 431 that becomes supporting substrates perforation distribution at least to prescribed depth ground.Then shown in Figure 49 C, on the upper strata of interlayer insulating film 420 from the formation face side applying supporting substrates 430 of supporting substrates distribution 431.

Shown in Figure 50 A, for example can make photodiode 414 be subjected to light up to for example semiconductor substrate 410 sides then semiconductor substrate 410 filmings from the SOI substrate.For example dielectric film 411 as stopper film, up to making dielectric film 411 carry out mechanical grinding or wet corrosion etc. from the rear side of semiconductor substrate 410 with exposing.The semiconductor layer 412 that so just becomes the SOI substrate is by residual structure.It on the drawing diagram that relative Figure 49 C carries out upper and lower relation on the contrary.

Shown in Figure 50 B, form the connection supporting substrates and connect distribution 431 and the distribution that is connected of imbedding wiring layer 421 then.Be exactly specifically for example form connect semiconductor layer 412 and with imbed the semiconductor layer perforation distribution 416 that wiring layer 421 is connected.Form perforation semiconductor layer 412 and connect the semiconductor layer insulating barrier perforation distribution 417 that distribution 431 is connected with supporting substrates with interlayer insulating film 420.What form to connect that semiconductor layer connects that distribution 416 and semiconductor layer insulating barrier connect distribution 417 is connected distribution 418.Become the surface insulating film 419 of diaphragm then.

Then shown in 51A, for example by mechanical grinding etc. and from the opposition side of binding face supporting substrates 430 filmings, up to supporting substrates distribution 431 is exposed, supporting substrates distribution 431 is connected distribution as the supporting substrates that connects supporting substrates 430.

Shown in 51B, for example handle and form from the outstanding protrusion 432 in the surface of supporting substrates 430 then on the surface of supporting substrates perforation distribution 431 by metal-plated.Then form rear surface irradiation type CMOS solid-state imager (sensor chip) 401b of present embodiment as mentioned above.

Rear surface irradiation type CMOS solid-state imager (sensor chip) 401b of above-mentioned such formation make on the sensitive surface side direction via being installed on the built-in inserted plate 403 with protruding 432 flip-chips.Signal processing chip 402 is mounted with flip-chip similarly.And via rear surface irradiation type CMOS solid-state imager (sensor chip) 401b being connected with signal processing chip 402 at built-in inserted plate 403 formed distributions.Then can make the imageing sensor of having assembled present embodiment rear surface irradiation type CMOS solid-state imager as mentioned above.

Present embodiment is not that the distribution of imbedding that forms on the semiconductor substrate directly is connected with through electrode in the supporting substrates, but after the back side filming of semiconductor substrate, by distribution through electrode with imbed distribution and be connected.This method is connected with signal processor owing to utilize the miniature protrusion that the supporting substrates back side forms, so do not need to carry out wire-bonded, the size in the time of can be single chip becomes littler.

According to the as above manufacture method of present embodiment rear surface irradiation type CMOS solid-state imager, at the applying supporting substrates and after having guaranteed intensity the semiconductor substrate filming, because supporting substrates filming and formation are connected distribution, can easyly easily make the rear surface irradiation type CMOS solid-state imager that takes out electrode from the face of shadow surface opposition side.

As mentioned above, the semiconductor image sensor module of the 17 embodiment (promptly having assembled the cmos image sensor of CMOS solid-state imager) 401 can directly according to pixels unit or every a plurality of pixel unit be imported to signal processor via miniature protrusion the signal from pixel output.Like this, the processes pixel speed between the device is fast, can provide high-performance and imageing sensor and signal processor single chip high performance device.And the aperture opening ratio of photodiode is enhanced, and the utilance of chip is enhanced, shading when can realize both full-pixel.And need not connect chip and wafer, therefore can dwindle chip size, improve the yield rate of wafer, reduce chip cost by wire-bonded.

The perforation distribution of above-mentioned the 16, the 17 embodiment can being combined to form by Cu, Al, W, WSi, Ti, TiN, silicide or they.

Use the present invention of Figure 42, Figure 48 explanation to be not limited to explanation above-mentioned the 16, the 17 embodiment.For example be to use the SOI substrate as semiconductor substrate in the foregoing description, but be not limited thereto, but also can use common semiconductor substrate, the opposing face that forms face from photodiode and transistor carries out filming.And can be formed on the whole area of chip from the outstanding protrusion that forms of supporting substrates, for example also can form and independently protrude and be connected, can read by each pixel with built-in inserted plate etc. by each pixel of cmos image sensor.In addition, can carry out various changes in the scope that does not break away from main idea of the present invention.

The semiconductor image sensor module of the above-mentioned first to the 17 embodiment for example can be useful in number and fix in the camera module that uses in the mobile phone etc. of picture camera, video camera, band camera.And can be useful in the e-machine module of middle uses such as electronic installation.

Above-mentioned semiconductor image sensor is the structure that possesses the rear surface irradiation type cmos image sensor, but also can be the structure that possesses Figure 27 surface irradiation type cmos image sensor in addition.

Claims

1. a semiconductor image sensor module is characterized in that, laminated have first semiconductor chip and second semiconductor chip,

Described first semiconductor chip, it possesses the imageing sensor that the rule assortments of a plurality of pixels and described each pixel are made of photo-electric conversion element and transistor;

Described second semiconductor chip, it possesses the A/D converter array that is made of a plurality of A/D converters.

2. semiconductor image sensor module as claimed in claim 1 is characterized in that, further laminated the 3rd semiconductor chip, and the 3rd semiconductor chip possesses the memory cell arrays that comprises encoder and sense amplifier at least.

3. semiconductor image sensor module as claimed in claim 2, it is characterized in that, make a plurality of photo-electric conversion elements and a plurality of memory component in the mode that has an A/D converter described first and second semiconductor chips with respect to the approaching configuration of described the 3rd semiconductor chip.

4. semiconductor image sensor module as claimed in claim 3 is characterized in that described memory component is a volatile memory.

5. semiconductor image sensor module as claimed in claim 3 is characterized in that, described memory component is the gate nonvolatile semiconductor memory that floats.

6. semiconductor image sensor module as claimed in claim 3 is characterized in that, described memory component is a MONOS type nonvolatile memory.

7. semiconductor image sensor module as claimed in claim 3 is characterized in that, described memory component is to get many-valued nonvolatile memory.

8. semiconductor image sensor module as claimed in claim 2 is characterized in that, has the parity check bank bit in the described memory cell arrays.

9. semiconductor image sensor module as claimed in claim 2 is characterized in that, has the defective relief in the described memory cell arrays with preparing the position.

10. a semiconductor image sensor module is characterized in that, laminated have first semiconductor chip and the 4th semiconductor chip,

Described the 4th semiconductor chip, it possesses the analogue type nonvolatile memory array that is made of a plurality of analogue type nonvolatile memories,

Wherein, utilize described analogue type nonvolatile memory to remember according to the amount of information of putting aside the quantity of electric charge.

11. the manufacture method of a semiconductor image sensor module, it is characterized in that, comprise: form the operation of first semiconductor chip, this first semiconductor chip possesses the imageing sensor of the regular assortment of a plurality of pixels two dimension that each pixel is made of photo-electric conversion element and transistor;

Form the operation of second semiconductor chip, this second semiconductor chip possesses the A/D converter array that is made of a plurality of A/D converters;

Laminated described first semiconductor chip and described second semiconductor chip, and to be inverted and to utilize the through hole that protrudes joint or utilize relative LSI chip vertically to connect wafer to connect the pixel of described imageing sensor and the operation of described A/D converter.

12. the manufacture method of semiconductor image sensor module as claimed in claim 11 is characterized in that,

Have the operation that forms the 3rd semiconductor chip, the 3rd semiconductor chip possesses the memory cell arrays of encoder and sense amplifier at least,

And have described first semiconductor chip, described second semiconductor chip and described the 3rd semiconductor chip laminated, and the operation that the pixel of described imageing sensor is connected with described memory by described A/D converter, this connection operation is connected by the through hole that relative wafer face vertically connects wafer.

13. the manufacture method of a semiconductor image sensor module, it is characterized in that, comprise: form the operation of first semiconductor chip, this first semiconductor chip possess the regular assortment of a plurality of pixels two dimension that each pixel is made of photo-electric conversion element and transistor imageing sensor,

Form the operation of the 4th semiconductor chip, the 4th semiconductor chip possess the analog nonvolatile memory array that constitutes by a plurality of analogue type nonvolatile memories,

Laminated with described the 4th semiconductor chip and be connected the pixel of described imageing sensor and the operation of described analogue type nonvolatile memory described first semiconductor chip.