CN101135048A - Plasma coating device and coating method thereof - Google Patents

Abstract

The present invention provides a plasma coating apparatus, comprising: a reaction chamber; a carrier disposed in the reaction chamber; a plasma source generator disposed in the reaction chamber and above the carrier, the plasma source generator including a plasma beam injector for providing a plasma beam for depositing a thin film, the plasma beam injector generating the plasma beam having an angle of 0 DEG < theta with respect to a normal line of the carrier₁< 90 °; and an air extractor disposed in the reaction chamber and above the carrier, the air extractor including an air extraction tube for providing an air extraction path to extract particles and byproducts generated during formation of the plasma beam, the angle between the air extraction tube and the carrier being 0 DEG to theta₂＜90°。

Description

Plasma coating device and coating method thereof

technical field

The present invention relates to a plasma coating device and a coating method thereof, in particular to an atmospheric pressure plasma coating device and a coating method thereof.

Background technique

Coating technology plays a very important role in modern industrial applications. Coating can be achieved by wet or dry methods, and advanced applications generally rely on dry manufacturing processes. Traditional dry coating technologies include physical vapor deposition (physical vapor deposition, PVD), chemical vapor deposition (chemical vapor deposition, CVD), atmospheric pressure (atmospheric pressure) chemical vapor deposition (atmospheric pressure CVD, APCVD), plasma enhanced chemical vapor deposition Deposition (plasma-enhancedCVD, PECVD), metal organic vapor deposition (metal organic CVD, MOCVD), molecular beam epitaxy (MBE), halide vapor phase epitaxy (Halide Vapor PhaseEpitaxy, HVPE), evaporation (Evaporation) etc. In addition to APCVD (also known as ThermalCVD), the above technologies all require a vacuum environment for the coating process. The dry plasma coating process that does not require a vacuum environment, also known as atmospheric pressure plasma-enhanced assisted coating (APPECVD), has attracted more and more attention and interest in recent years. The term "atmospheric pressure" or "atmospheric pressure" here It is defined that the pressure of the coating process is about one atmospheric pressure or the same as the external air pressure. At present, the traditional atmospheric-pressure plasma-assisted coating technology is not easy to produce a flat coating surface, and is prone to surface protrusions (HillLike), or needle-like surface morphology. These affect the quality of the coating, such as light transmittance, cleanliness, and surface characteristics. When used in applications that do not require high coating quality, such as people's livelihood applications, it can still be handled, but for products that require high-quality coatings, such as Optoelectronic semiconductor products will cause serious problems. How to avoid the generation of particles, or avoid surface unevenness after coating, such as surface protrusions (Hill Like), or needle-like surface types, requires a new dry A method and device for atmospheric pressure plasma assisted coating (AP PECVD) are proposed to solve the problems that are worried about in the current traditional atmospheric pressure plasma assisted coating process.

Contents of the invention

The purpose of the present invention is to propose a new dry atmospheric pressure plasma assisted coating (APPECVD) method and device to solve the problems that the traditional atmospheric pressure plasma assisted coating production process is worried about, such as atmospheric pressure plasma enhanced assisted coating. Coatings are prone to particle problems, and it is difficult to produce a flat coating surface, and it is easy to have surface protrusions (Hill Like), or a needle-like surface shape.

The method of the present invention uses the atmospheric pressure plasma production process, and cooperates with the special plasma source design, which can solve the problems faced by the current traditional atmospheric pressure plasma assisted coating production process.

In order to achieve the above-mentioned purpose of the invention, the present invention provides a plasma coating device, comprising: a reaction chamber; a carrier, arranged in the above-mentioned reaction chamber; a plasma source generating device, arranged in the above-mentioned reaction chamber, and located Above the above-mentioned carrier, the above-mentioned plasma source generating device includes a plasma beam injector, which is used to provide a plasma beam for depositing a thin film. Line angle 0°<θ1<90°; and an air extraction device arranged in the above reaction chamber and located above the above-mentioned carrier, the above-mentioned air extraction device includes an air extraction pipe for providing an air extraction path to extract the above-mentioned Particles and by-products generated when the plasma beam forms a thin film, the included angle between the above-mentioned exhaust pipe and the above-mentioned carrier is 0°<θ2<90°.

The present invention also provides a plasma coating method, comprising: providing a substrate; using a plasma source generating device with a plasma beam injector to generate a plasma beam for depositing a thin film to form a thin film on the substrate , the included angle between the plasma beam generated by the plasma beam injector and the normal line of the above-mentioned carrier is 0°<θ1<90°; Particles and by-products generated during the formation of the above-mentioned thin film, the angle between the above-mentioned suction pipe and the normal line of the above-mentioned carrier is 0°<θ2<90°.

Description of drawings

FIG. 1 a is a schematic cross-sectional view of a plasma coating device according to a first embodiment of the present invention.

FIG. 1 b is a schematic cross-sectional view of a plasma coating device according to a second embodiment of the present invention.

Fig. 1c is a schematic cross-sectional view of a plasma coating device according to a third embodiment of the present invention.

FIG. 1d is a schematic cross-sectional view of a plasma coating device according to a fourth embodiment of the present invention.

FIG. 1e is a schematic cross-sectional view of a plasma coating device according to a fifth embodiment of the present invention.

FIG. 1f is a schematic cross-sectional view of a plasma coating device according to a sixth embodiment of the present invention.

1g is a schematic cross-sectional view of a plasma coating device according to a seventh embodiment of the present invention.

Fig. 2 is a coating flow chart of the plasma coating device of the present invention.

Fig. 3a is the SEM image and Ra measurement value of the coating surface of the traditional atmospheric pressure plasma coating device.

Fig. 3b is a SEM image and Ra measurement value of the coating surface of the plasma coating device according to the preferred embodiment of the present invention.

Explanation of main component symbols

100～plasma coating device;

110 ~ reaction chamber;

120～plasma source generating device;

122 ~ plasma beam injector;

130～exhaust device;

132～exhaust pipe;

3 ~ seat;

20 ~ plasma beam;

21 ~ substrate;

22 ~ film;

29～pumping path;

30～particles or by-products;

33a, 33b ~ rotation axis;

34 ~ shell;

35 ~ injection channel;

36 ~ induction device.

Detailed ways

Hereinafter, the plasma coating device of the preferred embodiment of the present invention will be described in more detail by using the accompanying drawings. Figures 1a to 1g respectively show cross-sectional views of devices of preferred embodiments, and in each embodiment of the present invention, the same symbols represent the same components.

Please refer to FIG. 1 a , which shows a schematic diagram of a plasma coating device 100 in a first embodiment. The plasma coating device 100 mainly includes a reaction chamber 110 , a carrier 3 , a plasma source generating device 120 and an exhaust device 130 . The reaction chamber 110 is used to provide an environment for plasma coating. The gas pressure of the reaction chamber 110 can be normal pressure (same as external pressure, eg 760 torr) or low pressure (eg 0.1-1 torr). Furthermore, a carrier 3 is provided in the reaction chamber 110 , and the carrier 3 is used to carry the material to be coated. The material to be coated, such as the substrate 21 , can be placed on the carrier 3 . A plasma source generating device 120 is disposed in the reaction chamber 110 and is located above the carrier 3 . The plasma source generating device 120 includes a plasma beam injector 122, and the gas generating plasma in the plasma beam injector 122 can be nitrogen (N2), helium (He), argon (Ar), or even air (Air ), etc. In addition, the precursors required for coating are passed into the plasma beam injector 122 at the same time. Precursor (precursor) can be tetraethoxysilane (Tetraethoxysilane, TEOS), hexamethyldisiloxane (Hexamethyldisiloxane, HMDSO), hexamethyldisilazane (HMDSN), tetramethyldisilane ( Tetramethyldisiloxane, TMDSO), silane (Silane, SiH4) or tetrafluoromethane (Tetrafluoromethane, CF4) reaction gas forms the above-mentioned mixed plasma beam 20 for depositing a thin film 22 on the substrate 21, and the above-mentioned plasma beam 20 The included angle θ1 with the normal line of the carrier 3 is 0°<θ1<90°, preferably 30°-60°, more preferably 40°-50°. That is to say, the plasma beam 20 will strike the substrate 21 at an incident angle of θ1, and the oblique plasma beam 20 forms a functional layer such as silicon dioxide (SiO2) or silicon nitride (SiNx) on the substrate 21. film22. A gas extraction device 130 is provided at a position of the reaction chamber 110 relative to the plasma source generating device 120 , which is also located above the carrier 3 . The air extraction device 130 includes an air extraction pipe 132, and the included angle θ2 between the air extraction pipe 132 and the normal line of the carrier 3 is 0°<θ2<90°, preferably 30°-60°, more preferably 40°-50°, It is used to provide a suction path 29 to extract the particles or by-products 30 generated during the formation of the thin film 22, so that the particles or by-products 30 will not fall on the thin film 22 and contaminate the substrate 21 of the deposited coating, resulting in the thin film 22 on the substrate 21 The roughness is poor or the adhesion between the substrate 21 and the thin film 22 is poor. The difference between θ1 and θ2 is preferably less than 20°, more preferably less than 5°, most preferably 0°. In a preferred embodiment of the present invention, the oblique plasma beam 20 mainly allows the surface of the coating to avoid serious problems, such as avoiding surface unevenness after coating, such as the phenomenon of surface protrusion (Hill Like), or a needle-like surface At the same time, the particles or by-products 30 generated during the deposition of the coating can bounce off the substrate 21 and be taken away by the suction pipe 24 located on the reflection path (that is, the suction path 29), which can solve the problem of traditional atmospheric pressure plasma assisted coating The problem of poor coating quality caused by particles or by-products in the manufacturing process.

In a preferred embodiment of the present invention, the material and shape of the substrate 21 are not limited. For a non-planar substrate 21 , such as the bowl substrate 21 shown in FIG. 1 b , the plasma coating apparatus 100 can form a thin film 22 on the bowl substrate 21 . In order to completely form the thin film 22 on the substrate 21, the pumping device 130 can be rotated with the plasma source generating device 120 as the rotation axis 33a, as shown in FIG. 1c. Or as shown in Fig. 1 d, can use a housing 34 to coat the gas extraction device 130 and the plasma source generation device 120, make the gas extraction device 130 and the plasma source generation device 120 symmetrical rotation axis 33b with the driving device such as motor . In order to form the thin film 22 uniformly on the substrate 21 , as shown in FIG. 1 e , the air extraction device 130 and the plasma source generating device 120 can be moved in parallel relative to the carrier 3 . Or as shown in Figure 1f, the normal angle θ1 between the plasma beam 20 and the carrier 3 can be adjusted arbitrarily, or the end of the plasma beam injector 122 can be provided with different injection channels 35 to inject different incident angles (θ1) the plasma beam 20; the exhaust pipe 132 can also adjust the normal angle θ2 with the carrier 3 in conjunction with the plasma beam 20 of different incident angles (θ1), or the end of the exhaust pipe 132 can be designed as a wide-mouth shape, although It is possible to extract all particulates or by-products 30 . As shown in FIG. 1 g , the plasma coating device 100 of the preferred embodiment of the present invention can also be provided with an induction device 36 above the carrier 3 and between the air extraction device 130 and the plasma source generating device 120 . The sensing device 36 can be a product analysis device or a particle tracking device for detecting components of the thin film 22 or particles or the ejection direction of the by-product 30 .

Please refer to FIG. 2 , which shows the coating method of the plasma coating device 100 of the present invention. First, in step 210, a substrate is provided. Then, in step 220, utilize a plasma source generating device with an oblique plasma beam injector to generate a plasma beam for depositing a thin film, so as to form a thin film on the substrate, which can avoid surface defects after coating. Flat, such as the phenomenon of surface protrusions (Hill Like), or a needle-like surface pattern. The included angle between the plasma beam and the normal line of the substrate is 0°<θ1<90°. Then, in step 230, the particles and by-products generated when the plasma beam forms a thin film on the substrate are extracted by using an exhaust device with an exhaust pipe, the angle between the above-mentioned exhaust pipe and the normal line of the substrate is 0°<θ2<90 °.

In order to represent the coating quality of the plasma coating device 100 of the present invention, the traditional atmospheric pressure plasma coating device (θ1=0°, with exhaust pipe) and the plasma coating device of the preferred embodiment of the present invention are analyzed with the roughness (Ra) measured value 100, the greater the roughness measurement value, the worse the coating quality and the lower the light transmittance of the film. Please refer to Fig. 3 a and Fig. 3 b, it shows traditional atmospheric pressure plasma coating device and the plasma coating device of preferred embodiment of the present invention, form the scanning electron microscope of silicon dioxide (SiO2) thin film surface under atmospheric pressure (760torr) environment (scanning electronmicroscope, SEM) images and roughness (Ra) measurements. The surface roughness of the SiO2 film formed by the traditional atmospheric pressure plasma coating device is about 0.6 μm, while the surface roughness of the SiO2 film formed by the plasma coating device 100 of the preferred embodiment of the present invention is about 0.02 μm. Compared with the traditional atmospheric pressure plasma coating device, the plasma coating device 100 of the preferred embodiment of the present invention forms a thin film with smaller surface roughness and higher light transmittance, and has a preferred coating quality.

The plasma coating device of the present invention can be applied to the atmospheric pressure plasma production process, and can be formed with a small roughness, The film with high light transmittance and good adhesion has many advantages such as simple structure and low manufacturing cost.

The plasma coating device of the present invention is not limited to be applied to the atmospheric pressure plasma production process, but also can be applied to the low pressure plasma coating production process or surface treatment.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person in the industry may make some changes and modifications without departing from the spirit and scope of the present invention, so the protection scope of the present invention What is defined in the claims shall prevail.

Claims (24)

1. plasma coating device comprises:

One reaction chamber;

One year seat is arranged in this reaction chamber;

One plasma body source generating device, be arranged in this reaction chamber, and be positioned at this year of seat top, this plasma body source generating device comprises a plasma body bundle injector, in order to the plasma beam that provides a deposit film to use, this plasma body bundle that this plasma body bundle injector is produced and this year seat 0 °＜θ of normal angle ₁＜90 °; And

One air extractor, be arranged in this reaction chamber, and be positioned at this year of seat top, this air extractor comprises an extraction pipe, in order to providing one to bleed the path extracting particulate and the by product that produces when this plasma body bundle forms film, this extraction pipe and this year seat 0 °＜θ of normal angle ₂＜90 °.

2. plasma coating device according to claim 1 is characterized in that, this air extractor is to be turning axle rotation with this plasma body source generating device.

3. plasma coating device according to claim 1 is characterized in that, this plasma body source generating device and this air extractor are connected.

4. plasma coating device according to claim 3 is characterized in that, this plasma body source generating device that is connected and this air extractor are driven by a propulsion source and one is rotated.

5. plasma coating device according to claim 1 is characterized in that θ ₁Equal θ ₂

6. plasma coating device according to claim 1 is characterized in that θ ₁With θ ₂Difference less than 20 °.

7. plasma coating device according to claim 1 is characterized in that, this θ ₁Or θ ₂Can adjust arbitrarily.

8. plasma coating device according to claim 1 is characterized in that, the end of this extraction pipe is the wide-mouth shape.

9. plasma coating device according to claim 1 is characterized in that, comprises an induction installation, its be located at this year seat top and this air extractor and this plasma body source generating device between.

10. plasma coating device according to claim 9 is characterized in that, this induction installation is a plated film resultant analytical equipment.

11. plasma coating device according to claim 9 is characterized in that, this induction installation is the particle trajectory detector.

12. plasma coating device according to claim 1 is characterized in that, this air extractor and this plasma body source generating device are with respect to parallel the moving of this year of seat.

13. plasma coating device according to claim 1 is characterized in that, comprises a substrate, is arranged on this year of the seat, in order to deposit film to be provided.

14. plasma coating device according to claim 1 is characterized in that, the air pressure of this reaction chamber is identical with ambient pressure.

15. a plasma film coating method comprises the following steps:

One substrate is provided;

The plasma body source generating device that utilization has a plasma body bundle injector produces the plasma beam that a deposit film is used, to form a film on this substrate, 1＜90 ° of this plasma body bundle that this plasma body bundle injector is produced and the 0 °＜θ of normal angle of this substrate; And

The air extractor that utilization has an extraction pipe extracts particulate and the by product that produces when this plasma body bundle forms this film on this substrate, 2＜90 ° of the 0 °＜θ of normal angle of this extraction pipe and this substrate.

16. plasma film coating method according to claim 15 is characterized in that, θ 1 equals θ 2.

17. plasma film coating method according to claim 15 is characterized in that, the difference of θ 1 and θ 2 is less than 20 °.

18. plasma film coating method according to claim 15 is characterized in that, comprises an induction installation, it is located between this substrate top and this air extractor and this plasma body source generating device.

19. plasma film coating method according to claim 18 is characterized in that, this induction installation is a plated film resultant analytical equipment.

20. plasma film coating method according to claim 18 is characterized in that, this induction installation is the particle trajectory detector.

21. plasma film coating method according to claim 15 is characterized in that, the air pressure that forms this film is identical with ambient pressure.

22. plasma film coating method according to claim 15 is characterized in that, the generation type of this film is the plasma enhanced chemical vapor deposition method.

23. plasma film coating method according to claim 15 is characterized in that, this film is silica membrane or silicon nitride film.

24. plasma film coating method according to claim 15 is characterized in that, this film is an inorganic thin film.

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