CN101127275B - A method for manufacturing a high-voltage chip multilayer ceramic capacitor - Google Patents

Abstract

The invention provides a method for manufacturing a high-voltage chip multilayer ceramic capacitor, which is mainly prepared by porcelain slurry, making dielectric diaphragms, alternately overprinting inner electrodes and dielectric layers, drying blocks, laminating, cutting, debinding, sintering, It consists of chamfering, end capping, and end firing processes. In the process of alternately overprinting internal electrodes and dielectric layers, the material of the internal electrodes is nickel Ni. In the process of capping, the material of the terminal electrodes is copper Cu. The sintering The process consists of a degumming section, a heating and high temperature section, a heat preservation section, a cooling section, and a tempering section. The burn-in process is composed of a low temperature degumming section, a high temperature degumming section, a high temperature insulation section and a cooling section. The present invention greatly reduces the The production cost is reduced, and the preparation of high-voltage multilayer ceramic capacitors with base metal electrodes made of nickel Ni can be realized at the same time.

Description

A method for manufacturing a high-voltage chip multilayer ceramic capacitor

technical field

The present invention relates to a manufacturing method of a ceramic capacitor, more particularly, the present invention relates to a manufacturing method of a high-voltage multilayer chip ceramic capacitor using nickel as an internal electrode.

Background technique

Chip multilayer ceramic capacitor (MLCC) is a new type of electronic component, which is widely used in the surface mount of consumer electronics such as communications, computers, and household appliances. With the rapid development of global surface mount technology, the output of surface mount components has risen rapidly, and the demand for MLCC has continued to rise. At present, high-voltage and high-frequency multilayer ceramic capacitors (MLCCs) at home and abroad all use precious metal Ag/Pd materials as internal electrodes. For some products with high quality requirements, they even use all-Pd internal electrodes, while the terminal electrodes are Ag. lead to high production costs. The MLCC products of the Ag/Pd system are sintered in an air atmosphere. This technology has been developed for a long time and the process is relatively mature. The experience in this area at home and abroad is very rich.

The use of noble metals as internal electrodes has the following advantages:

First of all, since the inner and outer electrodes are made of inactive precious metals, the process of debinding, sintering and firing can be carried out in the air, and the ceramic dielectric system used does not need to be anti-reduction, so the production of raw materials is relatively simple;

Secondly, because the debinding is carried out in the air with sufficient oxygen content, the debinding process can be completed at a lower temperature and in a shorter time, with relatively high work efficiency and relatively low energy consumption.

However, there are many deficiencies in the MLCC products of the Ag/Pd system, mainly in the following aspects:

First of all, the production cost is high, because the noble metal Pd/Ag is used as the inner electrode and the noble metal Ag is used as the terminal electrode, resulting in higher production cost;

Chinese patent CN1287547A discloses a multilayer ceramic capacitor made by cooperating nickel inner electrodes with reducing porcelain powder, but the capacitor does not have the function of high voltage resistance.

Contents of the invention

The invention solves the problem that the multilayer ceramic capacitor of the Ni inner electrode is not resistant to high voltage.

The technical solution of the present invention is realized as follows: a method for manufacturing high-voltage chip multilayer ceramic capacitors, which is mainly prepared by porcelain slurry, making dielectric diaphragms, alternately overprinting internal electrodes and dielectric layers, drying blocks, laminating, cutting , debinding, sintering, chamfering, end capping, and end firing process. In the process of alternately overprinting the inner electrode and the dielectric layer, the inner electrode is made of nickel metal Ni, the end electrode is made of Cu, and the inner electrode is made of Pd/Ag. Compared with the MLCC products of the electrode, when Ni is used as the inner electrode, its flexural strength is higher, which is beneficial to resist the mechanical stress during assembly and substrate cutting. In the end-capping process, the end electrode is metal Cu, and the atomic numbers of Ni and Cu are adjacent and the atomic radius is similar. When the end is fired, the two are more easily combined into one, so that the internal and external electrodes are well connected, thereby ensuring that the product has excellent performance. reliability.

The sintering process is composed of a debinding section, a heating and high temperature section, a heat preservation section, a cooling section, and a tempering section. The debinding section is carried out under the protection of an N atmosphere containing H ₂ , _and the volume content of H ₂ is the total gas 0.2~1.5% of the weight, the temperature rise rate from room temperature to T ₁ is 1~2°C _/ min, 700≤T ₁ ≤850°C, the debinding time is 6~ ₈ hours; Carried out under the protection of the atmosphere, the volume content of _H2 is 0.8-2.5% of the total gas volume, the temperature rise rate when the temperature reaches _T2 from _T1 is 3-7℃/min, 850℃＜ _T2≤1330 ℃, _T2 The holding time at high temperature is 2 to 4 hours. The high temperature zone is the most critical and particularly important link in the sintering process. The process parameters are mainly realized according to the temperature matching TMA curve of the porcelain material and the inner slurry. The shrinkage temperature of the inner paste is 1000°C during the firing process, and the shrinkage temperature of the ceramic material is 1100°C during the firing process. Therefore, the heating rate of the firing curve in the temperature range of 850°C to 1330°C is very high, and the chip after sintering The porcelain body has no cracks.

The end-burning process consists of a low-temperature debinding section, a high-temperature debinding section, a high-temperature heat preservation section and a cooling section, wherein the low-temperature debinding section is carried out under the protection of an O2 _- containing _N2 atmosphere, and the _O2 content is controlled at 20- 300ppm, the temperature rises from room temperature to _T3 temperature, _{700≤T3≤800} ℃, the high temperature debinding section is carried out under the protection of _N2 atmosphere containing _O2 , the _O2 content _O2 content≤10ppm, the temperature is changed from _T3 Raise to T ₄ temperature, 800<T ₄ ≤960°C. The burning end adopts the segmented atmosphere protection burning end technology. The debinding section requires sufficient oxygen to decompose the polymer organic adhesive, and the high temperature debinding section should not be too high, because when the temperature is high, it is easy to cause Cu oxidation and Loss of electrical conductivity; high temperature insulation and cooling section requires low oxygen content to prevent Cu oxidation. This process requires a comprehensive consideration of factors such as the inability of the Cu terminal electrode to be oxidized, the full removal of the organic resin in the Cu terminal paste, and the immersion depth of the glass frit in the ceramic body, so as to ensure that the terminal electrode structure is compact, the internal and external electrodes are well bonded, and the ceramic body is combined. close.

Other steps of porcelain slurry preparation, cast silk screen printing, lamination, block drying, lamination, cutting, glue removal, chamfering, and end capping can be obtained by those skilled in the art with conventional processes.

High voltage and high frequency chip multilayer ceramic capacitors above 1000V can be manufactured by using the above aspects.

Further: the tempering stage of the sintering process is carried out under the protection of N ₂ atmosphere containing O ₂ , and the O ₂ content is 8ppm-30ppm. In the preparation of described porcelain slurry, select conventional reductive porcelain powder, conventional binding agent, conventional plasticizer, conventional dispersant, conventional defoamer, and the weight ratio of binding agent and porcelain powder is (45～ 50)%: 1, the weight ratio of plasticizer to porcelain powder is (2-4)%: 1, the weight ratio of dispersant to porcelain powder is (0.1-0.3)%: 1, the weight ratio of defoamer to porcelain powder The weight ratio is (0.1～0.2)%: 1, the rest is the mixed solvent of toluene and dehydrated alcohol, and toluene: the weight ratio of dehydrated alcohol is 0.5～4: 1, and described ceramic powder is spherical or nearly spherical, The particle size is 0.60～0.90um, and the porcelain slurry is cast to make a diaphragm with good dispersion; the position of the dielectric film of the chip multilayer ceramic capacitor is relatively weak, and it is very easy to discharge and breakdown under high voltage, so the dielectric film The uniformity of the sheet is very high, which puts forward higher requirements for the dispersion of ingredients, so as to ensure the production of ceramic dielectric diaphragms without pores and impurities, high density, smooth surface, and uniform powder distribution; the alternate overprinting In the internal electrode and dielectric layer process, the corners of the internal electrode are excessively rounded to avoid the peak discharge of the capacitor at high voltage and the breakdown of the capacitor. In order to further improve the product capacity and ESR, the internal electrodes in the process of alternately overprinting the internal electrodes and the dielectric layer described in the above manufacturing method can be the overprinting arrangement of the shielded floating structure, the overprinting arrangement of the semi-shielding floating structure, and the floating non-shielding structure. Structural overprint arrangement, non-displaced structural overprint arrangement.

The existing high-voltage multilayer ceramic capacitor technology all adopts Ag/Pd as the internal electrode slurry, and the present invention selects Ni, and the terminal electrode material in the sealing end is copper Cu; the price of the internal electrode slurry is about 1/20 of Ag/Pd , which greatly reduces the production cost. The present invention uses reductive porcelain powder, which is relatively cheap compared with the existing porcelain powder, and also saves the production cost of the product. The high-quality ceramic material is easier to withstand high pressure, which enhances product reliability.

Description of drawings

Fig. 1 is a schematic view of the longitudinal section of the long axis of the product obtained in the present invention, in which the internal electrodes are superimposed and arranged with a shielding suspension structure, and 1 is an internal electrode; Fig. 2 is a schematic view of the longitudinal section of the long axis of the product obtained in the present invention, and the internal electrodes are suspended in a semi-shielding structure Structural overprinting arrangement, 1 is the internal electrode; Fig. 3 is a schematic diagram of the longitudinal section of the long axis of the product obtained in the present invention, the internal electrode is arranged in a suspended non-shielding structure, 1 is the internal electrode; Fig. 4 is the longitudinal section of the long axis of the product obtained in the present invention A schematic diagram of the surface, the internal electrodes are arranged in a non-displaced structure by overprinting, and 1 is the internal electrode.

Detailed ways

Below in conjunction with accompanying drawing and embodiment the present invention will be further described:

Example 1:

A method for manufacturing high-voltage chip multilayer ceramic capacitors, in the preparation of conventional porcelain slurry, select conventional reducing porcelain powder, conventional adhesive, conventional plasticizer, conventional dispersant, conventional defoamer, and Binder: the weight ratio of porcelain powder is 45%: 1, plasticizer: the weight ratio of porcelain powder is 3%: 1, dispersant: the weight ratio of porcelain powder is 0.3%: 1, defoamer: porcelain powder The weight ratio of the ceramic powder is 0.15%: 1, and the rest is a mixed solvent of toluene and absolute ethanol, and the weight ratio of toluene: absolute ethanol is 1: 1. The porcelain powder is spherical or approximately spherical, and the particle size is 0.60～0.90 um, the ceramic slurry is made of ceramic dielectric diaphragm with good dispersion, high density, smooth surface and uniform powder distribution through conventional casting. In the process of alternately overprinting the inner electrode and the dielectric layer, the inner electrode is made of nickel Ni. In addition, the corners of the internal electrodes are excessively rounded, and the internal electrodes are arranged in the superposition of the shielded suspension structure in Figure 1; and then enter the sintering process after conventional block drying, lamination, cutting, and debinding. The sintering process It consists of a debinding section, a heating and high temperature section, a heat preservation section, a cooling section, and a tempering section. The debinding section is carried out under the protection of an N ₂ atmosphere containing H ₂ , and the volume content of H ₂ is 0.2 to 1.5 of the total gas volume. %, the temperature rise rate from room temperature to T ₁ is 1-2°C/min, 700≤T ₁ ≤850°C, preferably T ₁ is 850°C, the preferred temperature rise rate is 2°C/min, and the debinding time is 6-10 hours, preferably 8 hours; the high temperature section is carried out under the protection of _H2 -containing _N2 atmosphere, the volume content of _H2 is 0.8-2.5% of the total gas volume, and the temperature rise rate when the temperature reaches _T2 from _T1 3-7°C/min, 850°C< _T2≤1330 °C, preferably 7°C/min, the holding time at _T2 temperature is 2-4 hours, preferably 3 hours, the tempering of the sintering process The section is carried out under the protection of N ₂ atmosphere containing O ₂ , the O ₂ content is 8ppm ~ 30ppm, preferably 10 ~ 20ppm, the chip ceramic body obtained after sintering has no cracks and small internal stress; after the conventional chamfering process Entering the end-capping process, the terminal electrode is made of Cu, and finally undergoes the end-burning process. The end-burning process consists of a low-temperature debinding section, a high-temperature debinding section, a high-temperature insulation section, and _a cooling section. ₂ It is carried out under the protection of atmosphere, the _O2 content is controlled at 20-300ppm, the temperature is raised from room temperature to _T3 temperature, _{700≤T3≤800} ℃, and the high-temperature debinding section is carried out under the protection of _N2 atmosphere containing _O2 , O ₂ content ≤ 10ppm, temperature rises from T ₃ to T ₄ temperature, 800<T ₄ ≤ 960°C.

The 1206 specification 2000V, 1808/1812 specification 3000V～5000V chip multilayer ceramic capacitors are produced by the above method, the production cost is low, the capacitor can withstand high voltage, the product capacity is high and the ESR is low.

Example 2:

A method for manufacturing high-voltage chip multilayer ceramic capacitors, in the preparation of conventional porcelain slurry, select conventional reducing porcelain powder, conventional adhesive, conventional plasticizer, conventional dispersant, conventional defoamer, and Binder: the weight ratio of porcelain powder is 47%: 1, plasticizer: the weight ratio of porcelain powder is 3%: 1, dispersant: the weight ratio of porcelain powder is 0.3%: 1, defoamer: porcelain powder The weight ratio of the ceramic powder is 0.15%: 1, and the rest is a mixed solvent of toluene and absolute ethanol, and toluene: the weight ratio of absolute ethanol is 2: 1, and the porcelain powder is spherical or approximately spherical, and the particle size is 0.60～0.90 um, the ceramic slurry is made of ceramic dielectric diaphragm with good dispersion, high density, smooth surface and uniform powder distribution through conventional casting. In the process of alternately overprinting the inner electrode and the dielectric layer, the inner electrode is made of nickel Ni. In addition, the corners of the internal electrodes are excessively rounded, and the internal electrodes are arranged in the superposition of the semi-shielded suspension structure in Figure 2; and then enter the sintering process after conventional block drying, lamination, cutting, and debinding. The sintering process It consists of a debinding section, a heating and high temperature section, a heat preservation section, a cooling section, and a tempering section. The debinding section is carried out under the protection of an N ₂ atmosphere containing H ₂ , and the volume content of H ₂ is 0.2 to 1.5 of the total gas volume. %, the temperature rise rate from room temperature to T ₁ is 1-2°C/min, 700≤T ₁ ≤850°C, preferably T ₁ is 850°C, the preferred temperature rise rate is 2°C/min, and the debinding time is 6-10 hours, preferably 8 hours; the high temperature section is carried out under the protection of _H2 -containing _N2 atmosphere, the volume content of _H2 is 0.8-2.5% of the total gas volume, and the temperature rise rate when the temperature reaches _T2 from _T1 3-7°C/min, 850°C< _T2≤1330 °C, preferably 7°C/min, the holding time at _T2 temperature is 2-4 hours, preferably 3 hours, the tempering of the sintering process The section is carried out under the protection of N ₂ atmosphere containing O ₂ , the O ₂ content is 8ppm ~ 30ppm, preferably 10 ~ 20ppm, the chip ceramic body obtained after sintering has no cracks and small internal stress; after the conventional chamfering process Entering the end-capping process, the terminal electrodes are made of Cu, and finally go through the end-burning process. The end-burning process consists of a low-temperature debinding section, a high-temperature debinding section, a high-temperature insulation section, and _a cooling section. ₂ It is carried out under the protection of atmosphere, the _O2 content is controlled at 20-300ppm, the temperature is raised from room temperature to _T3 temperature, _{700≤T3≤800} ℃, and the high-temperature debinding section is carried out under the protection of _N2 atmosphere containing _O2 , O ₂ content ≤ 10ppm, temperature rises from T ₃ to T ₄ temperature, 800<T ₄ ≤ 960°C.

The 1206 specification 2000V, 1808/1812 specification 3000V～5000V chip multilayer ceramic capacitors are produced by the above method, the production cost is low, the capacitor can withstand high voltage, the product capacity is high and the ESR is low.

Example 3:

A method for manufacturing high-voltage chip multilayer ceramic capacitors, in the preparation of conventional porcelain slurry, select conventional reducing porcelain powder, conventional adhesive, conventional plasticizer, conventional dispersant, conventional defoamer, and Binder: the weight ratio of porcelain powder is 50%: 1, plasticizer: the weight ratio of porcelain powder is 3%: 1, dispersant: the weight ratio of porcelain powder is 0.3%: 1, defoamer: porcelain powder The weight ratio of the ceramic powder is 0.15%: 1, and the rest is a mixed solvent of toluene and absolute ethanol, and toluene: the weight ratio of absolute ethanol is 3: 1. The porcelain powder is spherical or approximately spherical, and the particle size is 0.60～0.90 um, the ceramic slurry is made of ceramic dielectric diaphragm with good dispersion, high density, smooth surface and uniform powder distribution through conventional casting. In the process of alternately overprinting the inner electrode and the dielectric layer, the inner electrode is made of nickel Ni. In addition, the corners of the internal electrodes are excessively rounded, and the internal electrodes are arranged by overprinting with the suspended non-shielding structure in Figure 3; and then enter the sintering process after conventional block drying, lamination, cutting, and debinding. The sintering process It consists of a debinding section, a heating and high temperature section, a heat preservation section, a cooling section, and a tempering section. The debinding section is carried out under the protection of an N ₂ atmosphere containing H ₂ , and the volume content of H ₂ is 0.2 to 1.5 of the total gas volume. %, the temperature rise rate from room temperature to T ₁ is 1-2°C/min, 700≤T ₁ ≤850°C, preferably T ₁ is 850°C, the preferred temperature rise rate is 2°C/min, and the debinding time is 6-10 hours, preferably 8 hours; the high temperature section is carried out under the protection of _H2 -containing _N2 atmosphere, the volume content of _H2 is 0.8-2.5% of the total gas volume, and the temperature rise rate when the temperature reaches _T2 from _T1 3-7°C/min, 850°C< _T2≤1330 °C, preferably 7°C/min, the holding time at _T2 temperature is 2-4 hours, preferably 3 hours, the tempering of the sintering process The section is carried out under the protection of N ₂ atmosphere containing O ₂ , the O ₂ content is 8ppm ~ 30ppm, preferably 10 ~ 20ppm, the chip ceramic body obtained after sintering has no cracks and small internal stress; after the conventional chamfering process Entering the end-capping process, the terminal electrode is made of Cu, and finally undergoes the end-burning process. The end-burning process is composed of a low-temperature debinding section, a high-temperature debinding section, a high-temperature insulation section, and a cooling section, wherein the low-temperature debinding section contains O ₂ under the protection of N ₂ atmosphere, the amount of O ₂ is controlled at 20-300ppm, the temperature rises from room temperature to T ₃ temperature, 700≤T ₃ ≤800℃, and the high-temperature debinding section is protected under the N ₂ atmosphere containing O ₂ Under the following conditions, O ₂ content ≤ 10ppm, the temperature rises from T ₃ to T ₄ temperature, 800 < T ₄ ≤ 960 ℃.

The 1206 specification 2000V, 1808/1812 specification 3000V～5000V chip multilayer ceramic capacitors are produced by the above method, the production cost is low, the capacitor can withstand high voltage, the product capacity is high and the ESR is low.

Example 4:

A method for manufacturing high-voltage chip multilayer ceramic capacitors, in the preparation of conventional porcelain slurry, select conventional reducing porcelain powder, conventional adhesive, conventional plasticizer, conventional dispersant, conventional defoamer, and Binder: the weight ratio of porcelain powder is 47%: 1, plasticizer: the weight ratio of porcelain powder is 3%: 1, dispersant: the weight ratio of porcelain powder is 0.3%: 1, defoamer: porcelain powder The weight ratio of the ceramic powder is 0.15%: 1, and the rest is a mixed solvent of toluene and absolute ethanol, and toluene: the weight ratio of absolute ethanol is 0.5: 1, and the porcelain powder is spherical or approximately spherical, and the particle size is 0.60～0.90 um, the ceramic slurry is made of ceramic dielectric diaphragm with good dispersion, high density, smooth surface and uniform powder distribution through conventional casting. In the process of alternately overprinting the inner electrode and the dielectric layer, the inner electrode is made of nickel Ni. In addition, the corners of the internal electrodes are excessively rounded, and the internal electrodes are arranged by overprinting with the non-dislocation structure shown in Figure 4; and then enter the sintering process after conventional block drying, lamination, cutting, and debinding. The sintering process consists of The debinding section, the heating and high temperature section, the heat preservation section, the cooling section, and the tempering section are composed. The debinding section is carried out under the protection of the N ₂ atmosphere containing H ₂ , and the volume content of H ₂ is 0.2 to 1.5% of the total gas volume. , the temperature rise rate from room temperature to T ₁ is 1-2°C/min, 700≤T ₁ ≤850°C, preferably T ₁ is 850°C, the preferred temperature rise rate is 2°C/min, and the debinding time is 6-10 hours , preferably 8 hours; the high temperature section is carried out under the protection of _N2 atmosphere containing _H2 , the volume content of _H2 is 0.8 to 2.5% of the total gas amount, and the temperature rise rate when the temperature reaches _T2 from _T1 is 3 ~7°C/min, 850°C< _T2≤1330 °C, preferably 7°C/min, the holding time at _T2 temperature is 2 to 4 hours, preferably 3 hours, the tempering section of the sintering process It is carried out under the protection of N ₂ atmosphere containing O ₂ , the O ₂ content is 8ppm-30ppm, preferably 10-20ppm, and the chip ceramic body obtained after sintering has no cracks and small internal stress; after the conventional chamfering process, it enters In the end-capping process, the terminal electrode is made of Cu, and finally undergoes the end-burning process. The end-burning process consists of a low-temperature debinding section, a high-temperature debinding section, a high-temperature insulation section, and a cooling section, wherein the low-temperature debinding section contains O ₂ It is carried out under the protection of N ₂ atmosphere, the O ₂ content is controlled at 20-300ppm, the temperature rises from room temperature to T ₃ temperature, 700≤T ₃ ≤800℃, and the high-temperature debinding section is under the protection of N ₂ atmosphere containing O ₂ To carry out, ₂ content O ₂ content ≤ 10ppm, temperature rises from T ₃ to T ₄ temperature, 800<T ₄ ≤ 960°C.

The 1206 specification 2000V, 1808/1812 specification 3000V～5000V chip multilayer ceramic capacitors are produced by the above method, the production cost is low, the capacitor can withstand high voltage, the product capacity is high and the ESR is low.

Claims (10)

1. method of making high-voltage sheet type multilayer ceramic capacitor, mainly by porcelain slurry preparation, make the medium diaphragm, alternately electrode and dielectric layer, briquet drying, lamination, cutting, binder removal, sintering, chamfering, end-blocking, burning end operation are formed in the double exposure, in interior electrode of described alternately double exposure and the dielectric layer operation, inner electrode is a nickel, in the described termination procedure, the termination electrode material is a copper, it is characterized in that:

Above-mentioned sintering circuit is made up of binder removal section, intensification high temperature section, soaking zone, temperature descending section, tempering section, and the binder removal section is to contain H ₂N ₂Carry out H under the atmosphere protection ₂Volume content be 0.2～1.5% of total gas flow, temperature by room temperature to T ₁The time 1～2 ℃/min of heating rate, 700≤T ₁≤ 850 ℃, 6～8 hours binder removal time; The intensification high temperature section is containing H ₂N ₂Carry out H under the atmosphere protection ₂Volume content be 0.8～2.5% of total gas flow, temperature is by T ₁Arrive T ₂The time 3～7 ℃/min of heating rate, 850 ℃＜T ₂≤ 1330 ℃, T ₂Temperature retention time during temperature 2～4 hours;

Above-mentioned burning end operation is made up of low temperature binder removal section, high temperature binder removal section, soak section and temperature descending section, and wherein low temperature binder removal section is containing O ₂N ₂Carry out O under the atmosphere protection ₂Content is controlled at 20～300ppm, and temperature is raised to T by room temperature ₃Temperature, 700≤T ₃≤ 800 ℃, high temperature binder removal section is containing O ₂N ₂Carry out O under the atmosphere protection ₂Content≤10ppm, temperature is by T ₃Be raised to T ₄Temperature, 800＜T ₄≤ 960 ℃.

2. manufacture method as claimed in claim 1 is characterized in that, the tempering section of described sintering circuit is containing O ₂N ₂Carry out O under the atmosphere protection ₂Content is 8ppm～30ppm.

3. manufacture method as claimed in claim 2, it is characterized in that, in the preparation of described porcelain slurry, the weight ratio of adhesive and porcelain powder is (45～50) %: 1, the weight ratio of plasticizer and porcelain powder is (2～4) %: 1, the weight ratio of dispersant and porcelain powder is (0.1～0.3) %: 1, and the weight ratio of defoamer and porcelain powder is (0.1～0.2) %: 1, all the other are solvents.

4. manufacture method as claimed in claim 3 is characterized in that, described solvent is the mixture of toluene and absolute ethyl alcohol, toluene: the weight ratio of absolute ethyl alcohol is 0.5～4: 1.

5. manufacture method as claimed in claim 4 is characterized in that, described porcelain powder is sphere or almost spherical, and particle diameter is 0.60～0.90um.

6. manufacture method as claimed in claim 5 is characterized in that, in electrode and the dielectric layer operation, each corner of interior electrode is excessive fillet in the described alternately double exposure.

7. manufacture method as claimed in claim 6 is characterized in that, interior electrode is to arrange with shielding suspension structure double exposure in interior electrode of described alternately double exposure and the dielectric layer operation.

8. manufacture method as claimed in claim 6 is characterized in that, interior electrode is to cover the suspension structure double exposure with half screen to arrange in interior electrode of described alternately double exposure and the dielectric layer operation.

9. manufacture method as claimed in claim 6 is characterized in that, interior electrode is the non-shielding construction double exposure arrangement that suspends in interior electrode of described alternately double exposure and the dielectric layer operation.

10. manufacture method as claimed in claim 6 is characterized in that, interior electrode is that the misconstruction double exposure is arranged in interior electrode of described alternately double exposure and the dielectric layer operation.

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