CN101110408A - Light emitting diode module - Google Patents
Light emitting diode module Download PDFInfo
- Publication number
- CN101110408A CN101110408A CN 200610103313 CN200610103313A CN101110408A CN 101110408 A CN101110408 A CN 101110408A CN 200610103313 CN200610103313 CN 200610103313 CN 200610103313 A CN200610103313 A CN 200610103313A CN 101110408 A CN101110408 A CN 101110408A
- Authority
- CN
- China
- Prior art keywords
- layer
- metal
- led
- emitting diode
- led module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Led Device Packages (AREA)
Abstract
Description
技术领域technical field
本发明涉及一种发光模组(即模块,以下均称为模组),特别是涉及一种发光二极管模组(LIGHT EMITTING DIODE MODULE)。The present invention relates to a light-emitting module (that is, a module, hereinafter referred to as a module), in particular to a light-emitting diode module (LIGHT EMITTING DIODE MODULE).
背景技术Background technique
发光二极管是由半导体材料所制成的发光元件,其是具有两个电极端子,当在端子间施加电压,通入极小的电压时,经由电子电洞的结合,则可将剩余能量以光的形式激发释出。A light-emitting diode is a light-emitting element made of semiconductor materials. It has two electrode terminals. When a voltage is applied between the terminals and a very small voltage is passed through, the remaining energy can be converted into light through the combination of electron holes. The form of stimulated release.
不同于一般白炽灯泡,发光二极管是属冷发光,具有耗电量低、元件寿命长、无须暖灯时间、反应速度快等优点。再加上其体积小、耐震动、适合量产,容易配合应用上的需求制成极小或阵列式的发光模组,故可广泛应用于照明设备、资讯、通讯、消费性电子产品的指示器及显示装置上,俨然成为日常生活中不可或缺的重要元件之一。Different from ordinary incandescent light bulbs, light-emitting diodes are cold-emitting, which have the advantages of low power consumption, long life of components, no need for warm-up time, and fast response. Coupled with its small size, vibration resistance, suitable for mass production, it is easy to make extremely small or array light-emitting modules according to application requirements, so it can be widely used in lighting equipment, information, communication, and consumer electronics. Devices and display devices have become one of the indispensable and important components in daily life.
请参阅图1所示,现有技术中发光二极管模组(LED module)10包括一承载板S以及复数发光二极管元件20,各发光二极管元件(LED device)20是设置于承载板S上,并利用承载板S上的电路以进行电性连接。另外,为了提高光线的利用率,现有技术也会在发光二极管模组10的承载板S表面贴上反射片(图中未示)。Please refer to Fig. 1, in the prior art, a light emitting diode module (LED module) 10 includes a carrier board S and a plurality of light
请参阅图2所示,其为发光二极管元件沿图1中直线A-A的剖面示意图。发光二极管元件20包括一基板21、一发光二极管晶粒(Die)22、一导线架23以及一封胶体24。Please refer to FIG. 2 , which is a schematic cross-sectional view of the LED element along the line A-A in FIG. 1 . The
导线架23设置于基板21,发光二极管晶粒22是利用凸块221而设置于导线架23上,再利用导线架23来作为发光二极管晶粒22对外的电性连接,而封胶体24是覆盖发光二极管晶粒22,以保护发光二极管晶粒22,并形成发光二极管元件20。The
由图1及图2可知,发光二极管模组10的组装相当复杂,导线架23需先与基板21结合,而发光二极管晶粒22则需形成凸块221以与导线架23电性连接。完成发光二极管元件20的组装后,还要再将复数个发光二极管元件20设置到承载板S上,才算完成发光二极管模组10。而且为了要提升光线的利用率,甚至还要贴附一层反射板于承载板S的表面,更是增加了组装的时间。As can be seen from FIGS. 1 and 2 , the assembly of the
除此之外,解决发光二极管晶粒22或发光二极管元件20的散热,更是一个重要的问题。随着使用时间的增加,发光二极管元件20的温度可能会因为发光二极管晶粒22的光电转换不完全,而产生相当可观的热能。若不即时协助降低发光二极管元件20的温度,则将会影响到发光二极管晶粒22的发光效率,甚至会缩短其使用寿命。现有技术中,各个发光二极管晶粒22所产生的热能,只能借由与电性连接相同的方式,由凸块221经过导线架23传导至承载板S,并没有其他的散热路径,故显然无法符合具有发光二极管模组10的需求。In addition, solving the heat dissipation of the
因此,如何提供一种发光二极管模组,能解决发光二极管晶粒及发光二极管元件的散热问题,实为一重要课题。Therefore, how to provide an LED module that can solve the problem of heat dissipation of LED chips and LED elements is an important issue.
由此可见,上述现有的发光二极管模组在结构与使用上,显然仍存在有不便与缺陷,而亟待加以进一步改进。为了解决上述存在的问题,相关厂商莫不费尽心思来谋求解决之道,但长久以来一直未见适用的设计被发展完成,而一般产品又没有适切的结构能够解决上述问题,此显然是相关业者急欲解决的问题。因此如何能创设一种新型的发光二极管模组,便成为当前业界极需改进的目标。It can be seen that the above-mentioned existing light-emitting diode modules obviously still have inconveniences and defects in structure and use, and need to be further improved urgently. In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but for a long time no suitable design has been developed, and the general products have no suitable structure to solve the above-mentioned problems. This is obviously related. The problem that the industry is eager to solve. Therefore, how to create a new type of light-emitting diode module has become a goal that needs to be improved in the current industry.
有鉴于上述现有的发光二极管模组存在的缺陷,本发明人基于从事此类产品设计制造多年丰富的实务经验及专业知识,并配合学理的运用,积极加以研究创新,以期创设一种新型的发光二极管模组,能够改进一般现有的发光二极管模组,使其更具有实用性。经过不断的研究、设计,并经过反复试作样品及改进后,终于创设出确具实用价值的本发明。In view of the defects existing in the above-mentioned existing light-emitting diode modules, the inventor actively researches and innovates based on years of rich practical experience and professional knowledge engaged in the design and manufacture of such products, and cooperates with the application of academic theories, in order to create a new type of LED module. The light-emitting diode module can improve the general existing light-emitting diode module to make it more practical. Through continuous research, design, and after repeated trial samples and improvements, the present invention with practical value is finally created.
发明内容Contents of the invention
本发明的主要目的在于,克服现有的发光二极管模组存在的缺陷,而提供一种新型的发光二极管模组,所要解决的技术问题是使其能解决散热问题,从而更加适于实用。The main purpose of the present invention is to overcome the defects of the existing LED module and provide a new LED module. The technical problem to be solved is to solve the heat dissipation problem, so that it is more suitable for practical use.
本发明的目的及解决其技术问题是采用以下技术方案来实现的。依据本发明提出的一种发光二极管模组,其包括:一金属电路基板,依序包括一金属层、一绝缘导热层以及一线路层;以及复数发光二极管晶粒,设置于该金属电路基板,且该等发光二极管晶粒分别与该线路层电性连结。The purpose of the present invention and the solution to its technical problems are achieved by adopting the following technical solutions. A light emitting diode module proposed according to the present invention includes: a metal circuit substrate, which sequentially includes a metal layer, an insulating heat conducting layer, and a circuit layer; and a plurality of light emitting diode crystal grains, arranged on the metal circuit substrate, And the light emitting diode crystal grains are respectively electrically connected with the circuit layer.
本发明的目的及解决其技术问题还可采用以下技术措施进一步实现。The purpose of the present invention and its technical problems can also be further realized by adopting the following technical measures.
前述的发光二极管模组,其中所述的金属层的材质为铜或铝。In the aforementioned LED module, the metal layer is made of copper or aluminum.
前述的发光二极管模组,其中所述的金属层的表面具有一金属镀膜。In the aforementioned light-emitting diode module, the surface of the metal layer has a metal coating film.
前述的发光二极管模组,其更包括:一导热金属板,与该金属层连结。The aforementioned light-emitting diode module further includes: a heat-conducting metal plate connected with the metal layer.
前述的发光二极管模组,其中所述的绝缘导热层的材质为树脂混合碳化硅粉末。In the aforementioned light-emitting diode module, the material of the insulating and heat-conducting layer is resin mixed with silicon carbide powder.
前述的发光二极管模组,其中所述的线路层包括复数金属垫部,该金属垫部设置于该等开口所对应的绝缘导热层上,该等发光二极管晶粒分别设置于该等金属垫部之上。The aforementioned light emitting diode module, wherein the circuit layer includes a plurality of metal pads, the metal pads are arranged on the insulating and heat-conducting layer corresponding to the openings, and the light emitting diode crystal grains are respectively arranged on the metal pads above.
前述的发光二极管模组,其中所述的金属电路基板更包括一绝缘层,其是设置于该线路层上,该绝缘层是具有复数开口。In the aforementioned LED module, the metal circuit substrate further includes an insulating layer disposed on the circuit layer, and the insulating layer has a plurality of openings.
前述的发光二极管模组,其中所述的绝缘层是为一高反射层。In the aforementioned LED module, the insulating layer is a high reflective layer.
前述的发光二极管模组,其中所述的绝缘层的材质是为二氧化钛与树脂的混合物。In the aforementioned light-emitting diode module, the material of the insulating layer is a mixture of titanium dioxide and resin.
前述的发光二极管模组,其更包括:一封胶体,是以该绝缘层所露出该等开口的边缘分别作为封胶边界。The aforementioned light emitting diode module further includes: an encapsulant, using the edges of the openings exposed by the insulating layer as encapsulation boundaries.
前述的发光二极管模组,其更包括:一驱动回路,是设置在金属电路基板,并与该等发光二极管晶粒电性连结。The aforementioned light emitting diode module further includes: a driving circuit, which is arranged on the metal circuit substrate and is electrically connected with the light emitting diode crystal grains.
借由上述技术方案,本发明发光二极管模组至少具有下列优点:因依本发明的一种发光二极管模组包括一金属电路基板及复数发光二极管晶粒,其中金属电路基板包括一金属层。与现有技术相比,发光二极管模组的发光二极管晶粒是设置于绝缘导热层或线路层上,可快速传递发光二极管晶粒所产生的热能至金属层,故能有效协助发光二极管晶粒散热,并延长发光二极管模组的使用寿命,更可确保发光二极管模组的发光品质。其次,发光二极管晶粒是设置于金属电路基板,而形成晶片直接封装(COB),也就是说发光二极管晶粒只需设置于金属基板后即可完成发光二极管模组的组装,故也减少了组装制程的步骤及时间。再者,于实施例中金属电路基板更包括一绝缘层,绝缘层是具有复数开口,各个开口更可作为封装制程的封胶边界,以减少封装制程步骤及时间。With the above-mentioned technical solutions, the LED module of the present invention has at least the following advantages: because a LED module according to the present invention includes a metal circuit substrate and a plurality of LED chips, wherein the metal circuit substrate includes a metal layer. Compared with the prior art, the LED dies of the LED module are arranged on the insulating heat-conducting layer or the circuit layer, which can quickly transmit the heat energy generated by the LED dies to the metal layer, so it can effectively assist the LED dies Heat dissipation, prolong the service life of the LED module, and ensure the luminous quality of the LED module. Secondly, the LED dies are placed on the metal circuit substrate to form a chip-on-chip package (COB). That is to say, the LED dies only need to be placed on the metal substrate to complete the assembly of the LED module. The steps and time of the assembly process. Furthermore, in the embodiment, the metal circuit substrate further includes an insulating layer, and the insulating layer has a plurality of openings, and each opening can be used as a sealing boundary of the encapsulation process, so as to reduce the steps and time of the encapsulation process.
综上所述,本发明新颖的发光二极管模组,能解决散热问题。本发明具有上述诸多优点及实用价值,其不论在装置结构或功能上皆有较大的改进,在技术上有显著的进步,并产生了好用及实用的效果,且较现有的发光二极管模组具有增进的功效,从而更加适于实用,并具有产业的广泛利用价值,诚为一新颖、进步、实用的新设计。To sum up, the novel LED module of the present invention can solve the problem of heat dissipation. The present invention has the above-mentioned many advantages and practical value, it has great improvement no matter in device structure or function, has significant progress in technology, and has produced easy-to-use and practical effect, and compared with existing light-emitting diode The module has improved functions, so it is more suitable for practical use, and has wide application value in the industry. It is a novel, progressive and practical new design.
上述说明仅是本发明技术方案的概述,为了能够更清楚了解本发明的技术手段,而可依照说明书的内容予以实施,并且为了让本发明的上述和其他目的、特征和优点能够更明显易懂,以下特举较佳实施例,并配合附图,详细说明如下。The above description is only an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention, it can be implemented according to the contents of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and understandable , the following preferred embodiments are specifically cited below, and are described in detail as follows in conjunction with the accompanying drawings.
附图说明Description of drawings
图1为现有技术中的发光二极管模组的一示意图;FIG. 1 is a schematic diagram of a light emitting diode module in the prior art;
图2为现有技术发光二极管模组中的发光二极管元件沿图1的A-A直线的一剖面示意图;Fig. 2 is a schematic cross-sectional view of a light-emitting diode element in a prior art light-emitting diode module along the line A-A of Fig. 1;
图3为本发明的发光二极管模组的一立体示意图;FIG. 3 is a three-dimensional schematic diagram of the LED module of the present invention;
图4为本发明的发光二极管模组沿图3的B-B直线的一剖面示意图;Fig. 4 is a schematic cross-sectional view of the LED module of the present invention along the line B-B in Fig. 3;
图5为本发明的发光二极管模组的另一剖面示意图;5 is another schematic cross-sectional view of the LED module of the present invention;
图6为本发明的发光二极管模组的另一剖面示意图;6 is another schematic cross-sectional view of the LED module of the present invention;
图7为本发明的发光二极管模组的另一剖面示意图;7 is another schematic cross-sectional view of the LED module of the present invention;
图8为本发明的发光二极管模组的另一剖面示意图;以及FIG. 8 is another schematic cross-sectional view of the LED module of the present invention; and
图9为本发明的发光二极管模组的另一剖面示意图。FIG. 9 is another schematic cross-sectional view of the LED module of the present invention.
10 发光二极管模组10 LED modules
20 发光二极管元件20 LED components
21 基板21 Substrate
22 发光二极管晶粒22 LED grains
221 凸块221 bump
23 导线架23 lead frame
24 封胶体24 sealants
30 发光二极管模组30 LED modules
31 金属电路基板31 metal circuit board
311 金属层311 metal layer
312 绝缘导热层312 Insulation and heat conduction layer
313 线路层313 line layer
314 绝缘层314 insulating layer
315 开口315 opening
32 发光二极管晶粒32 LED Die
33 封胶体33 sealant
34 驱动回路34 drive circuit
35 散热元件35 cooling element
351 散热鳍片351 cooling fins
36 导热金属板36 heat conduction metal plate
A-A 直线A-A straight line
B-B 直线B-B straight line
M 金属垫部M metal pad
P 锡膏P solder paste
S 承载板S load plate
V 通孔V through hole
具体实施方式Detailed ways
为更进一步阐述本发明为达成预定发明目的所采取的技术手段及功效,以下结合附图及较佳实施例,对依据本发明提出的发光二极管模组其具体实施方式、结构、特征及其功效,详细说明如后。In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation, structure, characteristics and effects of the light-emitting diode module proposed according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. , as detailed below.
请参阅图3所示,发光二极管模组30包括一金属电路基板31以及复数发光二极管晶粒32。须注意者,发光二极管模组30所具有发光二极管晶粒32的数目及排列方式,是不受限制。本实施例中,是以发光二极管晶粒32呈阵列式排列为例,当然,各个发光二极管晶粒32亦可呈直线排列。Please refer to FIG. 3 , the
请同时参阅图3及图4所示,其中图4为沿图3中的B-B直线的一剖面示意图,用以说明各发光二极管晶粒32与金属电路基板31的连结关系。金属电路基板31依序包括一金属层311、一绝缘导热层312以及一线路层313,例如电路基板31是可为一印刷电路基板(PCB),夹置于金属层311及线路层313之间的绝缘导热层312是可作为一绝缘层,印刷电路基板可为可挠性印刷电路板或是刚性的印刷电路板。其中,金属层311的材质可为高导热性的金属,例如为铜或铝,金属层311的厚度可达数微米(μm)。其中,金属层311也可为一金属复合积层(composite laminatelayer),也就是说,金属层311可由复数金属层堆迭而成,例如在铝金属层上堆迭一层铜金属层。另外,绝缘导热层312的材质是为具有高导热特性的绝缘层,其材质例如为树脂混合碳化硅粉末。Please refer to FIG. 3 and FIG. 4 at the same time. FIG. 4 is a schematic cross-sectional view along the line B-B in FIG. The
各发光二极管晶粒32是分别设置于金属电路基板31,且分别与线路层313电性连结,成为俗称的晶片直接封装(chip on board,COB),借由线路层313的连结,可以控制驱动各个发光二极管晶粒32的发光。本实施例中,发光二极管晶粒32的类型并无限制,图4中是以电极制作在同一面的发光二极管晶粒32为例,而发光二极管晶粒32是设置于金属层311,因此,需要打双线以使发光二极管晶粒32与线路层313电性连结。Each
请参阅图5所示,发光二极管晶粒32的电极也可以在不同侧,而成为垂直导通型的晶粒。此时,发光二极管晶粒32是设置于线路层313,以利电性连接。也就是说,本实施例中,可依据发光二极管晶粒32不同的类型,而利用打线连结或覆晶连结的方式,使发光二极管晶粒32与线路层313电性连结。Please refer to FIG. 5 , the electrodes of the LED die 32 can also be on different sides, so as to be a vertical conduction die. At this time, the LED die 32 is disposed on the
请参照图6所示,本实施例中,金属电路基板31更可包括一绝缘层314,其是设置于线路层313上,绝缘层314具有复数开口315。其中,绝缘层314是为一高反射层,其材质是可为二氧化钛(TiO2)与树脂的混合物,树脂可为环氧树脂。利用二氧化钛可在金属电路基板31上形成白色的高反射面,如此一来,发光二极管晶粒32所发出的光线,即可具有较好的光线利用率。Referring to FIG. 6 , in this embodiment, the
除此之外,发光二极管模组30更可包括一封胶体33,封胶体33可利用绝缘层314的开口315边缘来作为封装的封胶边界。如此一来,即可不用另外再形成凹洞来作为封装的封胶边界,故可减少封装制程的步骤及时间。另外,封胶体33可为一透镜或其他透光性的包覆材料,可具有修饰发光二极管晶粒32光形的效果。In addition, the light emitting
再请参照图6所示,发光二极管模组30更可包括一导热金属板36,其是与金属层311连结,连结的方式可包括贴附、黏着或锁固的方式。如此一来,可增加电路基板31的金属部份的厚度,以协助散热。Referring again to FIG. 6 , the
由于各发光二极管晶粒32是设置于绝缘导热层312或线路层313上,因此发光二极管晶粒32所产生的热能,是可直接经由绝缘导热层312或线路层313向下传递至金属层311,可加大散热面积,故能有效协助发光二极管晶粒32散热,并延长发光二极管晶粒32的使用寿命,更可提升发光二极管晶粒32的发光品质。除此之外,本发明中的发光二极管晶粒32只需设置于金属基板31后即可完成发光二极管模组的组装,故也减少了组装制程的步骤及时间。Since each light-emitting diode die 32 is disposed on the insulating heat-conducting
再请参阅图3所示,发光二极管模组30更可包括一驱动回路34,驱动回路34是设置在金属电路基板31,并与各发光二极管晶粒32电性连接,以驱动该等发光二极管晶粒32。其中,驱动回路34可包括一主动元件或一被动元件,主动元件可为一开关元件,例如为一电晶体(即晶体管)为一二极体;被动元件则可为一电容、一电阻、一电感或其组合。本实施例中,是以发光二极管模组30包括复数驱动回路34为例。Referring to FIG. 3 again, the
值得一提的是,本实施例中,金属电路基板31的结构尚可具有不同的态样。It is worth mentioning that, in this embodiment, the structure of the
请参阅图7所示,绝缘层314亦可延设至绝缘导热层312,发光二极管晶粒32的引线是穿过绝缘层314而与线路层313电性连结。在实际制程中,可先于绝缘层314中留下打线所需要的通孔V,以利打线制程的进行。Please refer to FIG. 7 , the insulating
请同时参阅图3及图8所示,线路层313是可包括复数金属垫部M,图8中可以看见各发光二极管晶粒32是对应一金属垫部M。金属垫部M是分别填设于开口315所对应的绝缘导热层312上,发光二极管晶粒32是设置于等金属垫部M之上。金属垫部M在制作时,可以和线路层313同时形成,而为线路层313图案的一部份。其中,金属垫部M可与发光二极管晶粒32直接接触,除了可以增加发光二极管晶粒32的高度,避免由发光二极晶粒32的侧面所发出的光线被绝缘层314遮住之外,金属垫部M的表面更可镀上具有高反射率的金属,例如:银,以将发光二极管晶粒32发出的侧光反射向上,以提升光线利用率。另外,金属垫部M还能协助热能的传导。而发光二极管晶粒32设置时,可沾上锡膏P后再设置于金属垫部M上,以增加发光二极管晶粒32与金属垫部M之间的连结强度。Please refer to FIG. 3 and FIG. 8 at the same time. The
请参阅图9所示,由于发光二极管晶粒32是设置于绝缘导热层312或线路层313上。为了提升散热的效率,发光二极管模组30可具有一个外加的散热元件35,散热元件35是与金属层311连结,例如利用贴附、黏着、锁固的方式,而将散热元件35与金属层311连结。散热元件35可具有复数的散热鳍片351或是具有其他方式的散热组件(例如:热管、风扇等等),图9中是以具有复数散热鳍片351的散热元件为例。Please refer to FIG. 9 , since the LED die 32 is disposed on the insulating and heat-conducting
综上所述,本发明的一种发光二极管模组是包括一金属电路基板及复数发光二极管晶粒,其中金属电路基板是包括一金属层。与现有技术相比,发光二极管模组的发光二极管晶粒是设置于绝缘导热层或线路层上,可快速传递发光二极管晶粒所产生的热能至金属层,故能有效协助发光二极管晶粒散热,并延长发光二极管模组的使用寿命,更可确保发光二极管模组的发光品质。其次,发光二极管晶粒是设置于金属电路基板,而形成晶片直接封装(COB),也就是说发光二极管晶粒只需设置于金属基板后即可完成发光二极管模组的组装,故也减少了组装制程的步骤及时间。再者,在实施例中金属电路基板更包括一绝缘层,绝缘层是具有复数开口,各个开口更可作为封装制程的封胶边界,以减少封装制程步骤及时间。To sum up, an LED module of the present invention includes a metal circuit substrate and a plurality of LED chips, wherein the metal circuit substrate includes a metal layer. Compared with the prior art, the LED dies of the LED module are arranged on the insulating heat-conducting layer or the circuit layer, which can quickly transmit the heat energy generated by the LED dies to the metal layer, so it can effectively assist the LED dies Heat dissipation, prolong the service life of the LED module, and ensure the luminous quality of the LED module. Secondly, the LED dies are placed on the metal circuit substrate to form a chip-on-chip package (COB). That is to say, the LED dies only need to be placed on the metal substrate to complete the assembly of the LED module. The steps and time of the assembly process. Furthermore, in the embodiment, the metal circuit substrate further includes an insulating layer, and the insulating layer has a plurality of openings, and each opening can be used as a sealing boundary of the encapsulation process, so as to reduce the steps and time of the encapsulation process.
以上所述,仅是本发明的较佳实施例而已,并非对本发明作任何形式上的限制,虽然本发明已以较佳实施例揭露如上,然而并非用以限定本发明,任何熟悉本专业的技术人员,在不脱离本发明技术方案范围内,当可利用上述揭示的技术内容作出些许更动或修饰为等同变化的等效实施例,但凡是未脱离本发明技术方案的内容,依据本发明的技术实质对以上实施例所作的任何简单修改、等同变化与修饰,均仍属于本发明技术方案的范围内。The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, can use the technical content disclosed above to make some changes or modify equivalent embodiments with equivalent changes, but all the content that does not depart from the technical solution of the present invention, according to the present invention Any simple modifications, equivalent changes and modifications made to the above embodiments by the technical essence still belong to the scope of the technical solutions of the present invention.
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200610103313 CN101110408A (en) | 2006-07-18 | 2006-07-18 | Light emitting diode module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200610103313 CN101110408A (en) | 2006-07-18 | 2006-07-18 | Light emitting diode module |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101110408A true CN101110408A (en) | 2008-01-23 |
Family
ID=39042388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200610103313 Pending CN101110408A (en) | 2006-07-18 | 2006-07-18 | Light emitting diode module |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101110408A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102468406A (en) * | 2010-11-19 | 2012-05-23 | 展晶科技(深圳)有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
CN103363363A (en) * | 2012-03-30 | 2013-10-23 | 展晶科技(深圳)有限公司 | Light-emitting diode light bar |
CN105322075A (en) * | 2015-11-02 | 2016-02-10 | 江苏稳润光电有限公司 | Substrate, packaging structure and packaging method for novel tunable light source |
-
2006
- 2006-07-18 CN CN 200610103313 patent/CN101110408A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102468406A (en) * | 2010-11-19 | 2012-05-23 | 展晶科技(深圳)有限公司 | Light emitting diode packaging structure and manufacturing method thereof |
CN102468406B (en) * | 2010-11-19 | 2014-11-05 | 展晶科技(深圳)有限公司 | LED (Light Emitting Diode) packaging structure and manufacturing method thereof |
CN103363363A (en) * | 2012-03-30 | 2013-10-23 | 展晶科技(深圳)有限公司 | Light-emitting diode light bar |
CN103363363B (en) * | 2012-03-30 | 2016-03-23 | 展晶科技(深圳)有限公司 | Light-emitting diode light bar |
CN105322075A (en) * | 2015-11-02 | 2016-02-10 | 江苏稳润光电有限公司 | Substrate, packaging structure and packaging method for novel tunable light source |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8610146B2 (en) | Light emitting diode package and method of manufacturing the same | |
US8017964B2 (en) | Light emitting device | |
TWI420695B (en) | Package module structure of compound semiconductor component and manufacturing method thereof | |
US8901580B2 (en) | Package for mounting electronic components, electronic apparatus, and method for manufacturing the package | |
US20070290307A1 (en) | Light emitting diode module | |
US20070290328A1 (en) | Light emitting diode module | |
JP4914998B1 (en) | LED module device and manufacturing method thereof | |
KR20050092300A (en) | High power led package | |
CN100435361C (en) | Packaging structure of semiconductor light emitting element | |
CN102610583B (en) | Package carrier and method for manufacturing the same | |
US20110084612A1 (en) | Hybrid chip-on-heatsink device and methods | |
US20070176182A1 (en) | Structure for integrating LED circuit onto heat-dissipation substrate | |
US20130062656A1 (en) | Thermally enhanced optical package | |
US20100084673A1 (en) | Light-emitting semiconductor packaging structure without wire bonding | |
KR101051488B1 (en) | Method for manufacturing light emitting diode unit, and light emitting diode unit manufactured by this method | |
CN100499119C (en) | LED Module | |
CN101728370B (en) | Encapsulation modular structure of compound semiconductor elements and manufacturing method thereof | |
CN100485925C (en) | LED Module | |
KR20080088140A (en) | Heat dissipation substrate and light emitting device including the same | |
KR101363980B1 (en) | Optical module and manufacturing method thereof | |
CN101110408A (en) | Light emitting diode module | |
US10784423B2 (en) | Light emitting device | |
TWI573299B (en) | Compound semiconductor device package module structure and fabricating method thereof | |
CN201112407Y (en) | High-power light-emitting diode structure | |
CN205335256U (en) | Integrate LED packaging structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |