CN101086083A - Method for preparing group III nitride substrate - Google Patents
Method for preparing group III nitride substrate Download PDFInfo
- Publication number
- CN101086083A CN101086083A CN 200710023555 CN200710023555A CN101086083A CN 101086083 A CN101086083 A CN 101086083A CN 200710023555 CN200710023555 CN 200710023555 CN 200710023555 A CN200710023555 A CN 200710023555A CN 101086083 A CN101086083 A CN 101086083A
- Authority
- CN
- China
- Prior art keywords
- iii
- nitride
- substrate
- film
- sapphire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 43
- 150000004767 nitrides Chemical class 0.000 title abstract description 12
- 239000010980 sapphire Substances 0.000 claims abstract description 40
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 40
- 230000012010 growth Effects 0.000 claims abstract description 31
- 239000012808 vapor phase Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 abstract description 47
- 239000010409 thin film Substances 0.000 abstract description 5
- 238000000926 separation method Methods 0.000 abstract description 4
- 238000011065 in-situ storage Methods 0.000 abstract description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 abstract description 2
- 150000004820 halides Chemical class 0.000 abstract 1
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007773 growth pattern Effects 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明公开了一种制备三族氮化物衬底的方法，其特征在于，包括下列步骤：(1)在蓝宝石衬底上生长三族氮化物薄膜，薄膜厚度在50纳米到50微米之间；(2)用高能量激光从衬底背面入射辐照，使三族氮化物薄膜和蓝宝石衬底不完全剥离，分离面积为总面积的10％到99％之间，所述高能量激光的光子能量在三族氮化物与蓝宝石的带宽之间；(3)对处理后的三族氮化物及蓝宝石衬底采用卤化物气相外延生长法继续进行三族氮化物薄膜生长，至所需厚度，即获得所需的三族氮化物衬底。本发明能保证获得薄膜的平整度，也可实现薄膜与蓝宝石衬底的原位自动分离，从而获得所需厚度的自支撑外延薄膜。
The invention discloses a method for preparing a Group-III nitride substrate, which is characterized in that it comprises the following steps: (1) growing a Group-III nitride thin film on a sapphire substrate, the thickness of which is between 50 nanometers and 50 microns; (2) Use a high-energy laser to incidently irradiate from the back of the substrate, so that the III-nitride film and the sapphire substrate are not completely peeled off, and the separation area is between 10% and 99% of the total area, and the photons of the high-energy laser The energy is between the bandwidth of the III-nitride and sapphire; (3) the treated III-nitride and the sapphire substrate are continued to grow the III-nitride film to the required thickness by halide vapor phase epitaxy growth method, namely Obtain the desired III-nitride substrate. The invention can ensure the flatness of the thin film, and can also realize the in-situ automatic separation of the thin film and the sapphire substrate, thereby obtaining a self-supporting epitaxial thin film with a required thickness.
Description
Technical field
The present invention relates to the method that a kind of method with vapor phase epitaxial growth prepares the III-nitride substrate, be used to obtain large-area III-nitride substrate, and the III group-III nitride thick film substrate of any component and self-supporting mono-crystal substrate.
Background technology
For the application of III group nitride material, the researchdevelopment through more than ten years makes a breakthrough at aspects such as blue light-emitting diode, short wavelength laser, ultraviolet detector and LED white-light illuminating light sources in succession.At present the further raising of device performance and some new devices designs and produces the restriction that has been subjected to extension film quality in substrate material and the device architecture.Reported that a lot of methods improve the quality of epitaxial film, as epitaxial lateral overgrowth, many buffer layers technology etc.Obtain the high-quality GaN substrate is the target that people pursue always.The main method of growing GaN substrate has the direct reaction preparation and the halogenide vapor phase epitaxial growth method (HVPE) of autoclave nitrogen and gallium at present.Preceding a kind of method is difficult to obtain large-size crystals, and then a kind of method is the main flow of studying at present.
Halogenide vapor phase epitaxial growth method (HVPE) is to utilize HCl gas to carry out the method for vapour phase epitaxy, and its process forms metal halide for the gas HCl source metal of flowing through, and generates required product with another kind of gas reaction then.A typical example is the HVPE system that is used for the III group-III nitride, and gas HCl flows through, and (In), (GaCl, AlCl InCl), generate GaN, AlN, InN with group V source NH3 reaction to metal then to form metal halide for Ga, Al.Advantages such as the advantage of HVPE equipment is that speed of response is fast, can reach 250 μ m/hr, and production cost is low are widely used in material growth field.Because the nitride epitaxial film that obtains is used as substrate usually and uses, thereby is also referred to as nitride.
Among the above-mentioned preparation method, the nitride epitaxial film grows on the Sapphire Substrate usually.Wherein the subject matter of Cun Zaiing is because the used substrate material and the lattice and the coefficient of thermal expansion mismatch of epitaxial film, will stress when epitaxial film reaches tens microns and ftracture, can not obtain the substrate wafer of large size self-supporting, particularly the problem of epitaxial film (as GaN) being peeled off from Sapphire Substrate how never is well solved.The method of the method for laser lift-off, laterally overgrown mask etc. implements and is inconvenient, and yield rate is low.
Summary of the invention
The object of the invention provides a kind of method for preparing the III-nitride substrate, to solve influences such as cracking that stress causes, distortion, obtains smooth, the nitride of thickness greatly.
For achieving the above object, the technical solution used in the present invention is: a kind of method for preparing the III-nitride substrate comprises the following steps:
(1) growth III-nitride film on Sapphire Substrate, film thickness is between 50 nanometers to 50 micron;
(2) with high energy laser from substrate back incident irradiation, III-nitride film and Sapphire Substrate are not exclusively peeled off, separating area be the total area 10% to 99% between, the photon energy of described high energy laser is between III-nitride and sapphire bandwidth;
(3) adopt halogenide vapor phase epitaxial growth method to proceed the III-nitride film growth to III-nitride after handling and Sapphire Substrate,, promptly obtain required III-nitride substrate to desired thickness.
In the technique scheme, in the described step (1), both can adopt the chemical vapor deposition method behind growth one deck III-nitride film on the Sapphire Substrate, promptly enter step (2), also can be after adopting chemical vapor deposition method growing film, then adopt halogenide vapor phase epitaxial growth method that film thickness is increased between 10 microns to 50 microns, enter step (2) again, i.e. the method for step (1) employing is a prior art.In the described step (2), the high energy laser that adopts does not absorb when penetrating Sapphire Substrate, and the energy of laser to be the III-nitride film absorb fully, decompose at the local melting of realization at the interface of substrate and film, cause not exclusively peeling off between film and Sapphire Substrate.
In the technique scheme, in the described step (2), the isolating position of irradiation constitutes mottled array, and the size of described each spot is between 0.1 millimeter to 5 millimeters; The product that obtains in the described step (3) is and the locally-attached III-nitride substrate of Sapphire Substrate.
Perhaps, in the described step (2), the isolating position of irradiation is strip and distributes, and width of fringe is between 0.1 millimeter to 5 millimeters; In the described step (3),, on the Sapphire Substrate of weak connection, separate automatically, obtain the epitaxial film of self-supporting in that III-nitride is thin when growing to desired thickness.
Wherein, described strip pattern is selected from a kind of in vertical bar line, concentric(al) circles, concentration ellipsis, spiral-line or the Polygons.
The present invention has proposed the method that a kind of in-situ accomplishes III-nitride thick film cuts separation from Sapphire Substrate, and can be used to prepare the III group-III nitride substrate of growth temperature at all components more than 600 ℃ by technique scheme.
With the gan is example, and present method forms weak the connection between GaN rete and Sapphire Substrate, by the accumulation of growth stress or in the lifting temperature course STRESS VARIATION realize separating of GaN and substrate.
At first utilize at the GaN film about growth 50 nanometers to 50 micron on sapphire (sapphire) substrate, utilize high energy laser from substrate back incident irradiation, GaN film and Sapphire Substrate are not exclusively peeled off, promptly be part and separate, separating area reaches between 10% to 99%.Concrete grammar is to select the high energy laser (for example KrF excimer laser) of photon energy between GaN and sapphire bandwidth, locality ground heating sapphire/GaN GaN at the interface, make GaN at the interface experience high temperature and exploded, realize the weak stress-strain that is connected, discharges in the GaN rete of GaN epitaxial film and Sapphire Substrate.Then GaN/ sapphire samples continued growth in HVPE of handling through laser irradiation, when GaN grows into certain thickness, because stress, the GaN epitaxial film will separate from the substrate of weak connection automatically, thereby realizes the epitaxy of GaN self-supporting film.
Because the technique scheme utilization, the present invention compared with prior art has following advantage:
1. the present invention utilizes the partial radiation of high energy laser, realize that film and the weak of substrate are connected, solved the stress problem between epitaxial film and the substrate, film appearance cracking or flexural deformation in preparation process have been avoided, the novel method of utilizing halogenide vapor phase epitaxial growth method to realize the III-nitride substrate preparation is provided, has can be used for preparing large-area III group-III nitride substrate more than 1 inch;
2. when the present invention adopts latticed or mottled discontinuous figure to realize not exclusively peeling off, can effectively discharge stress, guarantee to obtain the planeness of film;
3. when the present invention adopts the striated figure to realize not exclusively peeling off, can pass through stress accumulation, realize that when film reaches desired thickness film separates automatically with the original position of Sapphire Substrate, thereby obtain the self-supporting epitaxial film of desired thickness.
Description of drawings
Accompanying drawing 2 is a synoptic diagram of using laser apparatus irradiation among the embodiment one;
Accompanying drawing 3 is the pattern synoptic diagram of film and the mottled disengaging of substrate among the embodiment one;
Accompanying drawing 4 is the pattern synoptic diagram that film and substrate striated break away among the embodiment three.
Wherein: 1, substrate; 2, film; 3, laser.
Embodiment
Below in conjunction with drawings and Examples the present invention is further described:
Embodiment one: to shown in the accompanying drawing 3, thickness is greater than 10 microns the growth of GaN on Sapphire Substrate referring to accompanying drawing 1.
As shown in Figure 1, at first with grow on Sapphire Substrate 1 GaN of one deck 2 micron thickness of HVPE, growth pattern also can adopt MOCVD or MBE method.Sample is taken out in cooling then, adopt high energy laser 3 from substrate back incident as Fig. 2, go out as shown in Figure 3 figure by scan mode at interface scanning, its mode is, the long laser apparatus of radiothermy is from substrate back irradiation GaN and substrate interface, the wavelength region of laser apparatus be photon energy between sapphire and thin-film material bandwidth, when the laser penetration substrate, do not absorb like this, and the energy of laser to be film 2 absorb fully, realize that at substrate and film interface local melting decomposes.In the accompanying drawing 3, the spot position is the position that local melting breaks away from, and its area accounts for 10%～99% of the total area.Because substrate and film are middle with the gallium connection in partial disengagement, will regrow through the sample of handling so then, just can solve the buckling problem of thick film GaN substrate wafer.Because stress is discharged by the part, do not needing under the complicated lateral growth process condition, more than the GaN film growth to 100 micron.Adopt opticmicroscope to amplify 50 times and observes, the GaN/sapphire direct growth of not passing through laser treatment is to 100 micron thickness, GaN film discrepitate; And adopting GaN film growth to 100 micron after the present embodiment method is handled, the GaN rete does not have crackle in the photo.
Embodiment two, thickness are greater than 10 microns the growth of AlGaN substrate on Sapphire Substrate.
At first with on Sapphire Substrate, the grow GaN of one deck 1 micron thickness of MOCVD method.Sample is taken out in cooling then, adopts high energy laser from substrate back incident as Fig. 2, goes out as shown in Figure 3 figure by scan mode at interface scanning.In HVPE sample is heated to 1100 ℃ of direct growth AlGaN then, wherein in the metal ingredient, the weight ratio of Al can be any component of from 0% to 100%.According to the component of Al and the thickness of needs growth, aforesaid method can repeatedly use.
The growth of embodiment three, GaN self-supporting homo-substrate.
At first with grow on the Sapphire Substrate GaN of one deck 2 micron thickness of HVPE, growth pattern also can or be used the MBE method in MOCVD.Sample is taken out in cooling then, adopts high energy laser from substrate back incident as Fig. 2, goes out the striated figure by scan mode at interface scanning.Shown in the accompanying drawing 4 that a kind of GaN film of can realizing is in position in the process of growth and the laser scanning figure that cuts separation of Sapphire Substrate.With more than the GaN film growth to 100 micron just under the effect of growth stress, realized separating fully of GaN film and substrate.Separate the back continuous growth, just can access GaN self-supporting homo-substrate.
Claims (4)
1. a method for preparing the III-nitride substrate is characterized in that, comprises the following steps:
(1) growth III-nitride film 2 on Sapphire Substrate 1, film thickness is between 50 nanometers to 50 micron;
(2) use high energy laser 3 from substrate back incident irradiation, III-nitride film and Sapphire Substrate are not exclusively peeled off, separating area be the total area 10% to 99% between, the photon energy of described high energy laser is between III-nitride and sapphire bandwidth;
(3) adopt halogenide vapor phase epitaxial growth method to proceed the III-nitride film growth to III-nitride after handling and Sapphire Substrate,, promptly obtain required III-nitride substrate to desired thickness.
2. the method for preparing the III-nitride substrate according to claim 1 is characterized in that: in the described step (2), the isolating position of irradiation constitutes mottled array, and the size of described each spot is between 0.1 millimeter to 5 millimeters; The product that obtains in the described step (3) is and the locally-attached III-nitride substrate of Sapphire Substrate.
3. the method for preparing the III-nitride substrate according to claim 1 is characterized in that: in the described step (2), the isolating position of irradiation is strip and distributes, and width of fringe is between 0.1 millimeter to 5 millimeters; In the described step (3),, on the Sapphire Substrate of weak connection, separate automatically, obtain the epitaxial film of self-supporting in that III-nitride is thin when growing to desired thickness.
4. the method for preparing the III-nitride substrate according to claim 3 is characterized in that: described strip pattern is selected from a kind of in vertical bar line, concentric(al) circles, concentration ellipsis, spiral-line or the Polygons.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100235558A CN101086083B (en) | 2007-06-08 | 2007-06-08 | Method for preparing group III nitride substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100235558A CN101086083B (en) | 2007-06-08 | 2007-06-08 | Method for preparing group III nitride substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101086083A true CN101086083A (en) | 2007-12-12 |
| CN101086083B CN101086083B (en) | 2011-05-11 |
Family
ID=38937237
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100235558A Active CN101086083B (en) | 2007-06-08 | 2007-06-08 | Method for preparing group III nitride substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101086083B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102817074A (en) * | 2012-07-23 | 2012-12-12 | 北京燕园中镓半导体工程研发中心有限公司 | In-situ stress control-based self-separation method for III-nitride thick membrane |
| CN103367117A (en) * | 2013-07-05 | 2013-10-23 | 江苏能华微电子科技发展有限公司 | GaN (gallium nitride) substrate production method based on HVPE (hydride vapor phase epitaxy) process |
| CN103541000A (en) * | 2013-11-06 | 2014-01-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Device and method for preparing boron nitride single crystal |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1176483C (en) * | 2002-05-31 | 2004-11-17 | 南京大学 | Method for preparing self-supporting gallium nitride substrate by laser lift-off |
| US7202141B2 (en) * | 2004-03-29 | 2007-04-10 | J.P. Sercel Associates, Inc. | Method of separating layers of material |
| CN100463102C (en) * | 2004-11-23 | 2009-02-18 | 北京大学 | Large-area, low-power laser lift-off method for GaN-based epitaxial layers |
| KR100616656B1 (en) * | 2005-01-03 | 2006-08-28 | 삼성전기주식회사 | Method and apparatus for manufacturing gallium nitride based single crystal substrate |
-
2007
- 2007-06-08 CN CN2007100235558A patent/CN101086083B/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102817074A (en) * | 2012-07-23 | 2012-12-12 | 北京燕园中镓半导体工程研发中心有限公司 | In-situ stress control-based self-separation method for III-nitride thick membrane |
| CN102817074B (en) * | 2012-07-23 | 2015-09-30 | 北京燕园中镓半导体工程研发中心有限公司 | Based on the group III-nitride thick film self-separation method that in-situ stress controls |
| CN103367117A (en) * | 2013-07-05 | 2013-10-23 | 江苏能华微电子科技发展有限公司 | GaN (gallium nitride) substrate production method based on HVPE (hydride vapor phase epitaxy) process |
| CN103541000A (en) * | 2013-11-06 | 2014-01-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Device and method for preparing boron nitride single crystal |
| CN103541000B (en) * | 2013-11-06 | 2016-09-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of device and method preparing boron nitride monocrystal |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101086083B (en) | 2011-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6498113B1 (en) | Free standing substrates by laser-induced decoherency and regrowth | |
| CN1909190B (en) | Gallium nitride device substrate containing lattice parameter modifying elements | |
| CN102272891B (en) | Inside reforming substrate for epitaxial growth,crystal film forming element,device,and bulk substrate produced using the same,and method for producing the same | |
| US6290774B1 (en) | Sequential hydride vapor phase epitaxy | |
| CN100505165C (en) | A method for preparing gallium nitride single crystal substrate | |
| CN102226985B (en) | A kind of preparation method of GaN substrate | |
| US20110124139A1 (en) | Method for manufacturing free-standing substrate and free-standing light-emitting device | |
| US20110079766A1 (en) | Process for fabricating iii-nitride based nanopyramid leds directly on a metalized silicon substrate | |
| DE112006002505T5 (en) | A method of producing a group 3-5 nitride semiconductor and a method of manufacturing a light emitting device | |
| JP6666353B2 (en) | Production of semiconductor supports based on group III nitrides | |
| CN101680114A (en) | Method for manufacturing gan-based nitride semiconductor self-supporting substrate | |
| CN101445956A (en) | Method for epitaxial growth of nitride films | |
| CN101685768A (en) | Method for preparing self-supporting mono-crystal gallium nitride substrate | |
| JP2018093112A (en) | Nitride semiconductor template manufacturing method, nitride semiconductor template, and nitride semiconductor device | |
| CN101702418A (en) | GaN-based LED chip extending and growing method for reducing dislocation defects | |
| WO2006086471A2 (en) | A method to grow iii-nitride materials using no buffer layer | |
| US7951694B2 (en) | Semiconductor structure and method of manufacture of same | |
| CN114242854B (en) | Homoepitaxy structure, preparation method and stripping method thereof | |
| CN101086083B (en) | Method for preparing group III nitride substrate | |
| JP2022173200A (en) | A platform for laterally oriented, low defect density, large area metal nitride islands and its fabrication method | |
| JPH07267796A (en) | Production of gallium nitride single crystal | |
| US20170117136A1 (en) | Fabrication method of semiconductor multilayer structure | |
| Deng et al. | Ga-free AlInN films growth by close-coupled showerhead metalorganic chemical vapor deposition | |
| JP2017226584A (en) | Production method of self-standing substrate | |
| US12095002B2 (en) | Group-III-nitride structures and manufacturing methods thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS(SIN Free format text: FORMER OWNER: SUZHOU NANO TECHNIQUE + NANO BIONIC RESEARCH INST. Effective date: 20100908 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 215123 B-513, SUZHOU GRADUATE SCHOOL OF NANJING UNIVERSITY, NO.150, REN AI ROAD, SUZHOU INDUSTRIAL PARK, SUZHOU CITY, JIANGSU PROVINCE TO: 215123 NO.398, RUOSHUI ROAD, SUZHOU INDUSTRIAL PARK, SUZHOU CITY, JIANGSU PROVINCE |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20100908 Address after: 215123 Suzhou Industrial Park, Jiangsu Province, if the waterway No. 398, No. Applicant after: Suzhou Institute of Nano-Tech and Bionics (SINANO), Chinese Academy of Sciences Address before: 215123 Graduate School of Suzhou graduate school, 150 Yan Ai Road, Suzhou Industrial Park, Jiangsu, Suzhou, B-513 Applicant before: Suzhou Nano Technique & Nano Bionic Research Inst. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160413 Address after: Suzhou City, Jiangsu Province, Suzhou Industrial Park 215000 Xinghu Street No. 218 BioBAY A7-101 Patentee after: Suzhou Nanowin Science and Technology Co., Ltd. Address before: 215123 Suzhou Industrial Park, Jiangsu Province, if the waterway No. 398, No. Patentee before: Suzhou Institute of Nano-Tech and Bionics (SINANO), Chinese Academy of Sciences |