CN101055854A - Making method of the pixel structure and pixel structure - Google Patents
Making method of the pixel structure and pixel structure Download PDFInfo
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- CN101055854A CN101055854A CN 200710097482 CN200710097482A CN101055854A CN 101055854 A CN101055854 A CN 101055854A CN 200710097482 CN200710097482 CN 200710097482 CN 200710097482 A CN200710097482 A CN 200710097482A CN 101055854 A CN101055854 A CN 101055854A
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Abstract
本发明公开了一种像素结构的制作方法包括下列步骤：先提供一具有一像素区的基板。在基板上形成一第一金属层、一栅绝缘层与一半导体层后，藉由第一半调式或灰调式光罩将其图案化，形成一晶体管图案、一下层电容图案与一下层线路图案。接着，在依序形成覆盖上述三图案的一介电层与一电极层后，再将其图案化，以暴露出部分下层线路、下层电容与晶体管图案的一源极/漏极区，并在其上形成一第二金属层。然后，经由第二半调式或灰调式光罩图案化第二金属层与电极层，形成一上层线路、一源极/漏极图案与一上层电容图案，且部分电极层构成一像素电极。
The invention discloses a manufacturing method of a pixel structure, which includes the following steps: first, a substrate with a pixel area is provided. After forming a first metal layer, a gate insulating layer and a semiconductor layer on the substrate, they are patterned by a first half-tone or gray-tone mask to form a transistor pattern, a lower-layer capacitor pattern and a lower-layer circuit pattern . Then, after sequentially forming a dielectric layer and an electrode layer covering the above three patterns, it is patterned to expose a part of the lower layer circuit, the lower layer capacitor and a source/drain region of the transistor pattern, and in the A second metal layer is formed thereon. Then, the second metal layer and the electrode layer are patterned through a second half-tone or gray-tone mask to form an upper circuit, a source/drain pattern and an upper capacitor pattern, and a part of the electrode layer constitutes a pixel electrode.
Description
Technical field
The present invention relates to a kind of production method of pixel structure, and particularly relevant for a kind of production method of pixel structure of using less light shield.
Background technology
Along with modern video signal development of technology, various display has been used in mobile phone, mobile computer, digital camera and personal digital assistant in large quantities, and (personal digital assistant PDA) waits on the display screen of consumption electronic products.In these displays, because LCD (liquid crystal display, LCD) and organic electro-luminescent display (organic electroluminescence display, OELD) have in light weight, advantage such as volume is little and power consumption is low, make it become the main flow on the market.No matter be LCD or organic electro-luminescent display, its manufacturing process includes with semiconductor process and form the dot structure that array is arranged on substrate.
Figure 1A～Fig. 1 G illustrates the section flow chart of a kind of one pixel structure process method of prior art.At first, please refer to Figure 1A, at first utilize and on a substrate 10, form a grid (gate) 20.Then, shown in Figure 1B, on substrate 10, form one first dielectric layer 30 with cover gate 20.Then, shown in Fig. 1 C, on first dielectric layer 30, form a channel layer 40.Form one source pole (source) 50 and drain electrode (drain) 60 as Fig. 1 channel layer that D is shown in (channel) 40 tops afterwards.Then, shown in Fig. 1 E, on substrate 10, form one second dielectric layer 70 to cover channel layer 40, source electrode 50 and to drain 60.Then, shown in Fig. 1 F, on second dielectric layer 70, make a contact hole H.Afterwards, shown in Fig. 1 G, form a pixel electrode 80 on second dielectric layer 70, this pixel electrode 80 is that part is inserted among the contact hole H and electrically connected with drain electrode 60.So, the making of dot structure 90 is just roughly finished.
In sum, the making of the dot structure 90 of prior art mainly is to form grid 20 by first light shield, second light shield forms channel layer 40, the 3rd light shield forms source electrode 50 and drains 60, the 4th light shield forms contact hole H, and the 5th light shield forms pixel electrode 80, so the making of dot structure 90 is the operations that adopt five road light shields, therefore making step is more, and Production Time is longer.When making step was more complicated, the chance of dot structure 90 generation defectives was higher, and the production qualification rate is also lower.In addition, the making of the dot structure 90 of prior art is the Production Time of adopting more making step and cost long, no matter be the board equipment fixed cost of buying more or the material cost of producing on utilizing all can make total production cost uprise.
Summary of the invention
Technical problem to be solved by this invention is, a kind of production method of pixel structure of less light shield operation is provided, and it is suitable for reducing the required light shield number of operation, and then reduces cost of manufacture.
For achieving the above object, a kind of production method of pixel structure is proposed at this.At first, provide a substrate with a pixel region.Then, on substrate, form laminated that a first metal layer, a gate insulation layer and semi-conductor layer form in regular turn.Then, formed laminated via one the first half mode (half-tone) or grey mode (gray-tone) mask patternization by the first metal layer, gate insulation layer and semiconductor layer, in other embodiments, patterning is above-mentioned laminatedly also can finish via two light shield operations of different exposure energies.Hold above-mentionedly, form a transistor pattern, once layer capacitance pattern and layer line road pattern once, wherein the transistor pattern comprises the first metal layer, gate insulation layer and semiconductor layer respectively with following layer capacitance pattern, and lower floor's line pattern comprises the first metal layer.The material of above-mentioned gate insulation layer for example is silica, silicon nitride or organic material, and the material of semiconductor layer for example is amorphous silicon or polysilicon.Afterwards, form a dielectric layer and an electrode layer more in regular turn on substrate, wherein dielectric layer and electrode layer covering transistor pattern, down layer capacitance pattern and lower floor's line pattern, and the material of electrode layer for example is a transparent conductive material.Then, pattern dielectric layer and electrode layer make it form a pattern dielectric layer and patterned electrode layer, to expose the source of part lower floor line pattern, the following layer capacitance pattern of part and transistor pattern.Afterwards, form one second metal level on electrode layer, and make second metal level be electrically connected to the source/drain regions of lower floor's line pattern, following layer capacitance pattern and transistor pattern.At last, via one the second half mode or grey mode mask patternization second metal level and electrode layer,, can certainly come patterning second metal level by two light shield operations of different exposure energies to form a patterning second metal level.Wherein form layer capacitance pattern on a upper layer circuit pattern, the source pattern and behind patterning second metal level, and the patterned electrode layer that exposes part of second metal level in the pixel region is with as a pixel electrode.In sum, by the dot structure of above-mentioned steps made comprise that the patterning that is disposed on the substrate is laminated, pattern dielectric layer, patterned electrode layer and patterning second metal level.
In one embodiment of this invention, more be included in after pattern dielectric layer and the electrode layer, with the dielectric layer of patterning and electrode layer as the cover curtain, the part semiconductor layer of following layer capacitance pattern and the semiconductor layer of source/drain regions are carried out ion doping and form a doping semiconductor layer, and wherein ion doping for example is P type ion doping or N type ion doping.
In one embodiment of this invention, also be included in after pattern dielectric layer and the electrode layer, form a doping semiconductor layer on electrode layer, and make doping semiconductor layer be connected to lower floor's line pattern, the source/drain regions of following layer capacitance pattern and transistor pattern, so that patterning second metal level of follow-up formation contacts with other rete via doping semiconductor layer, in addition, when coming patterning second metal level and electrode layer via the second half modes or grey mode light shield, while patterning doping semiconductor layer is so that doping semiconductor layer has identical pattern with second metal level.In this manufacture method, doping semiconductor layer comprises P type doping semiconductor layer or N type doping semiconductor layer.
In one embodiment of this invention; also be included in and form after second metal level; form a protective layer on second metal level; and when coming patterning second metal level and electrode layer via the second half modes or grey mode light shield; while patterning protective layer; so that protective layer has identical pattern with second metal level, and the material of protective layer for example is silica, silicon nitride or organic material.
In one embodiment of this invention, come the method for patterning the first metal layer, gate insulation layer and semiconductor layer to comprise the following steps: at first, form one first photoresist layer on semiconductor layer via the first half modes or grey mode light shield.Then, via the first half modes or grey mode light shield first photoresist layer is carried out little shadow operation, have a transistor photoresistance pattern of first thickness and layer capacitance photoresistance pattern once in pixel region, to form, and form the road of the layer line once photoresistance pattern with second thickness outside pixel region, wherein first thickness is greater than second thickness.Afterwards, with first photoresist layer serves as that the cover curtain carries out etching to the first metal layer, gate insulation layer and semiconductor layer, forms the lower floor's line pattern, the transistor pattern and following layer capacitance pattern that correspond respectively to lower floor's circuit photoresistance pattern, transistor photoresistance pattern and following layer capacitance photoresistance pattern.Then, remove the segment thickness of transistor photoresistance pattern, the following semiconductor layer in segment thickness, lower floor's circuit photoresistance pattern and the lower floor's line pattern of layer capacitance photoresistance pattern.In other embodiments, removing lower floor's line pattern comprises and removes gate insulation layer.At last, remove remaining first photoresist layer again.
In one embodiment of this invention, comprise the following steps: at first, form one second photoresist layer on second metal level via the method for the second half modes or grey mode mask patternization second metal level and electrode layer.Then, via the second half modes or grey mode light shield second photoresist layer is carried out little shadow operation, outside pixel region, to form a upper layer circuit photoresistance pattern with the 3rd thickness, and a pixel electrode photoresistance pattern that forms layer capacitance photoresistance pattern on the source photoresistance pattern and with the 3rd thickness and have the 4th thickness in pixel region, wherein the 3rd thickness is greater than the 4th thickness.Afterwards, with second photoresist layer serves as that the cover curtain carries out etching to second metal level and electrode layer, and formation corresponds respectively to source/drain photoresistance pattern, goes up the source/drain pattern of layer capacitance photoresistance pattern and upper layer circuit photoresistance pattern, goes up layer capacitance pattern and upper layer circuit pattern.Then, carry out an ashing (ashing) operation, with the segment thickness that removes source/drain photoresistance pattern, the segment thickness of going up layer capacitance photoresistance pattern and the segment thickness and the pixel electrode photoresistance pattern of upper layer circuit photoresistance pattern.Then, remove electrode layer that second metal level corresponding to pixel electrode pattern exposes part with as pixel electrode.At last, remove remaining second photoresist layer.
In one embodiment of this invention, also be included in when via the second half modes or grey mode light shield second photoresist layer being carried out little shadow operation, formation has a connection pad photoresistance pattern of the 4th thickness pixel region outside simultaneously.Then, carry out an ashing operation, to remove connection pad photoresistance pattern, wherein ashing operation for example is an oxygen electricity slurry ashing operation.Then, remove corresponding to second metal level of connection pad photoresistance pattern forming a connection pad pattern, and this connection pad pattern connects upper layer circuit pattern.
The present invention proposes another kind of production method of pixel structure, and it omits the making in zones such as above-mentioned lower floor's line pattern and upper layer circuit pattern, and the making flow process is similar to the above.In detail, the dot structure of finishing with this manufacture method made comprise that a substrate, a patterning are laminated, a pattern dielectric layer, a patterned electrode layer and a patterning second metal level.Patterning is laminated to comprise a first metal layer, a gate insulation layer and semi-conductor layer, and forms a transistor pattern and layer capacitance pattern once on substrate.Above-mentioned pattern dielectric layer is disposed on the substrate and covering transistor pattern and following layer capacitance pattern, and pattern dielectric layer exposes partly the source of layer capacitance pattern and transistor pattern down.In addition, patterned electrode layer is disposed on the pattern dielectric layer, and wherein the material of electrode layer for example is a transparent conductive material.In addition, patterning second metal level is disposed on the patterned electrode layer, comprise layer capacitance pattern on source pattern and, wherein source/drain pattern and last layer capacitance pattern are connected to source/drain regions and following layer capacitance pattern respectively, and patterning second metal level exposes the patterned electrode layer of part as a pixel electrode.In other words, this manufacture method only keeps the making of transistor pattern, electric capacity pattern and patterned electrode layer in the pixel region, and gets rid of the making of the outer circuit pattern of pixel region.Configuration, composition and making flow process as for each member of back that completes are all similar with above-mentioned production method of pixel structure, just do not add at this and do not give unnecessary details.
The present invention reintroduces a kind of production method of pixel structure, its make flow process and above-mentioned production method of pixel structure similar, except the making of omitting upper and lower layer line road area of the pattern, also got rid of the making of the electric capacity area of the pattern of upper strata, lower floor.In detail, the dot structure with this manufacture method made comprises a substrate, a transistor pattern, a pattern dielectric layer, a patterned electrode layer and a patterning second metal level.The transistor pattern setting is on substrate, and the transistor pattern comprises a first metal layer, a gate insulation layer and semi-conductor layer.Above-mentioned pattern dielectric layer is disposed on the substrate and the covering transistor pattern, and pattern dielectric layer exposes the source of transistor pattern.In addition, patterned electrode layer is disposed on the pattern dielectric layer, and wherein the material of electrode layer comprises transparent conductive material.In addition, patterning second metal level is disposed on the patterned electrode layer, and patterning second metal level comprises the source pattern, and the source/drain pattern is connected to source/drain regions, and patterning second metal level exposes the patterned electrode layer of part, with as a pixel electrode.In other words, this manufacture method only keeps the making of interior transistor pattern of pixel region and patterned electrode layer, and gets rid of the making of interior electric capacity pattern of pixel region and the outer circuit pattern of pixel region.Configuration, composition and making flow process as for each member of back that completes are all similar with above-mentioned production method of pixel structure, just do not add at this and do not give unnecessary details.
The present invention adopts the operation of less light shield, not only can save the cost of light shield compared to five road light shield operations of prior art, also can lower because of the tediously long defective that causes of operation.In addition, in a dot structure of the present invention, transistor uses the structure of bottom grid, can reduce photoelectric current, keeps performance of transistors.In addition, transistorized structure adopts the design of etch stop layer (Etching Stop Layer), can promote the characteristic of driving component, and improves the production qualification rate.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A～Fig. 1 G is a kind of one pixel structure process method of prior art;
Fig. 2 A～Fig. 2 J is the production method of pixel structure of first embodiment of the invention;
Fig. 3 A～Fig. 3 I is the production method of pixel structure of second embodiment of the invention.
Wherein, Reference numeral is:
10,210: substrate
20: grid
30: the first dielectric layers
40: channel layer
50,250a: source electrode
60,250b: drain electrode
70: the second dielectric layers
80,296: pixel electrode
90,200,300: dot structure
220: the first metal layer
230: gate insulation layer
240: semiconductor layer
240 ': doping semiconductor layer
242: the first photoresist layers
242a: transistor photoresistance pattern
242b: following layer capacitance photoresistance pattern
242c: lower floor's circuit photoresistance pattern
250: the transistor pattern
250a: the source area of transistor pattern
250b: the drain region of transistor pattern
252a: source electrode pattern
252b: drain pattern
256: patterning is laminated
260: following layer capacitance pattern
262: go up the layer capacitance pattern
270: lower floor's line pattern
272: the upper layer circuit pattern
280: dielectric layer
282: the optical pattern resistances layer
290: electrode layer
292: the second metal levels
293: protective layer
294: the second photoresist layers
294a: source/drain photoresistance pattern
294b: go up layer capacitance photoresistance pattern
294c: upper layer circuit photoresistance pattern
294d: pixel electrode photoresistance pattern
294e: connection pad photoresistance pattern
296: pixel electrode
298: the connection pad pattern
D: ion doping
H: opening
H1: first thickness
H2: second thickness
H3: the 3rd thickness
H4: the 4th thickness
M1: the first half mode or grey mode light shields
M2: the second half mode or grey mode light shields
P: pixel region
Embodiment
A kind of pixel structure preparation method and dot structure that is suitable for using less light shield operation proposed in the present invention, this production method of pixel structure can be used for making simultaneously driving component, pixel electrode and storage capacitors and the outer outside line of pixel region P in the pixel region P, also can be used for making separately driving component, pixel electrode and storage capacitors in the pixel region P in the dot structure, or only be used for making driving component and pixel electrode in the pixel region P separately.The present invention proposes a kind of dot structure that is suitable for using less light shield operation, but does not limit the formation zone of production method of pixel structure and the zone of finishing of dot structure.In order to be beneficial to explanation, below only explain to make the outer outside line of driving component, pixel electrode and storage capacitors in the pixel region P and pixel region P simultaneously.
[first embodiment]
Fig. 2 A～Fig. 2 I is the production method of pixel structure of first embodiment of the invention.
Please earlier with reference to Fig. 2 A, provide a substrate 210 with a pixel region P earlier.Then, on substrate 210, form the first metal layer 220, gate insulation layer 230 and semiconductor layer 240 in regular turn, wherein the material of semiconductor layer 240 for example is amorphous silicon or polysilicon, and the method for formation the first metal layer 220 for example is sputter (sputtering) or evaporation (evaporation).The material of gate insulation layer 230 for example is that silica or silicon nitride or its are laminated, and the method that forms gate insulation layer 230 for example be chemical vapour deposition technique (chemicalvapor deposition, CVD).Then, shown in Fig. 2 A, via the first half modes or grey mode light shield M1 patterning the first metal layer 220, gate insulation layer 230 and semiconductor layer 240, form first photoresist layer 242 on semiconductor layer 240, wherein first photoresist layer 242 is included in and forms the transistor photoresistance pattern 242a and following layer capacitance photoresistance pattern 242b with first thickness H1 in the pixel region P, and form the circuit photoresistance pattern 242c of lower floor with second thickness H2 outside pixel region P, wherein the first thickness H1 is greater than the second thickness H2.
Afterwards, shown in Fig. 2 B, serve as that the cover curtain carries out etching to the first metal layer 220, gate insulation layer 230 with semiconductor layer 240 with first photoresist layer 242.In the present embodiment, etching work procedure for example is the dry-etching operation, and in other embodiments, etching work procedure also can Wet-type etching.Because the first thickness H1 of transistor photoresistance pattern 242a and following layer capacitance photoresistance pattern 242b is greater than the second thickness H2 of the circuit photoresistance pattern 242c of lower floor, therefore, behind the segment thickness that removes transistor photoresistance pattern 242a and following layer capacitance photoresistance pattern 242b, the circuit photoresistance pattern 242c of lower floor is removed fully.In the present embodiment, the operation that removes photoresistance for example is the ashing operation.
Then, shown in Fig. 2 C, proceed an etching work procedure, make that the semiconductor layer 240 in lower floor's line pattern 270 is removed.In other embodiments, remove lower floor's line pattern 270 except removing semiconductor layer 240, still comprise removing gate insulation layer 230, and etching work procedure herein for example is the dry-etching operation.Afterwards, remove remaining first photoresist layer 242a and the 242b again, formation corresponds respectively to lower floor's line pattern 270, the transistor pattern 250 and following layer capacitance pattern 260 of the circuit photoresistance pattern 242c of lower floor, transistor photoresistance pattern 242a and following layer capacitance photoresistance pattern 242b (being illustrated in Fig. 2 B), wherein transistor pattern 250 comprises the first metal layer 220, gate insulation layer 230 and semiconductor layer 240 respectively with following layer capacitance pattern 260, and lower floor's line pattern 270 comprises the first metal layer 220 and gate insulation layer 230 in the present embodiment.
Afterwards, please refer to Fig. 2 D, on substrate 210, form dielectric layer 280 and electrode layer 290 in regular turn, and dielectric layer 280 and electrode layer 290 covering transistor patterns 250, following layer capacitance pattern 260 and lower floor's line pattern 270.The material of above-mentioned dielectric layer 280 for example is that silicon nitride or silica or its are laminated, and the method for its formation for example is physical vaporous deposition or chemical vapour deposition technique.In addition, the method for formation electrode layer 290 for example is to form transparent conductive material layers such as an indium tin oxide layer or an indium-zinc oxide layer by the sputter operation.Continuing it, carry out a little shadow operation, with formation optical pattern resistances layer 282, and then carry out an etching work procedure, serves as the cover curtain with optical pattern resistances layer 282, etching dielectric layer 280 and electrode layer 290.Shown in Fig. 2 D, behind pattern etched dielectric layer 280 and the electrode layer 290, expose the source electrode 250a/ drain electrode 250b district of part lower floor line pattern 270, the following layer capacitance pattern 260 of part and transistor pattern 250.
Then, shown in Fig. 2 E, after pattern dielectric layer 280 and electrode layer 290, again with optical pattern resistances layer 282 as cover curtain, to the part semiconductor floor 240 of layer capacitance pattern 260 and the semiconductor layer 240 in source electrode 250a/ drain electrode 250b district carry out ion doping D down, wherein ion doping D for example is P type ion doping or N type ion doping, and the method for ion doping for example to be ion penetrate clump operation (ion shower) or ion are implanted (ion implantation).Afterwards, again optical pattern resistances layer 282 is removed.Afterwards and carry out a high temperature ion activation operation, this step can use boiler tube or the use operation that is rapidly heated to carry out.
Afterwards, shown in Fig. 2 F, after carrying out ion doping D, on electrode layer 290, form second metal level 292, and make second metal level 292 be electrically connected to the source electrode 250a/ drain electrode 250b district of lower floor's line pattern 270, following layer capacitance pattern 260 and transistor pattern 250.Above-mentioned second metal level, 292 materials for example are aluminium (Al), molybdenum (Mo), molybdenum nitride (MoN), titanium (Ti), titanium nitride (TiN), it is laminated, or other electric conducting material, and the method for its formation for example is to utilize proper methods such as sputter or evaporation to deposit.
Then, shown in Fig. 2 G, carry out a little shadow operation via one the second half mode or grey mode light shield M2, on second metal level 292, form second photoresist layer 294, wherein second photoresist layer 294 has the upper layer circuit photoresistance pattern 294c of the 3rd thickness H3 outside pixel region P, the source/drain photoresistance pattern 294a that has the 3rd thickness H3 in pixel region P and last layer capacitance photoresistance pattern 294b and the pixel electrode photoresistance pattern 294d with the 4th thickness H4, wherein the 3rd thickness H3 is greater than the 4th thickness H4.In the present embodiment, when second photoresist layer 294 being carried out little shadow operation, comprise more that simultaneously pixel region P outside formation has the connection pad photoresistance pattern 294e of the 4th thickness H4 via the second half modes or grey mode light shield M2.
Afterwards, shown in Fig. 2 H, with second photoresist layer 294 serves as that the cover curtain carries out etching to second metal level 292 with electrode layer 290, with outside pixel region P, form a pair of should be in the upper layer circuit pattern 272 of upper layer circuit photoresistance pattern 294c, in pixel region P, form corresponding to the source electrode 252a/ drain electrode 252b pattern of source/drain photoresistance pattern 294a and corresponding on layer capacitance photoresistance pattern 294b on layer capacitance pattern 262.
Then, carry out an ashing operation, because the 3rd thickness H3 of upper layer circuit photoresistance pattern 294c, source/drain photoresistance pattern 294a and last layer capacitance photoresistance pattern 294b is greater than the 4th thickness H4 of pixel electrode photoresistance pattern 294d, therefore, when pixel electrode photoresistance pattern 294d was removed fully, source electrode 252a/ drain electrode 252b photoresistance pattern 294a, last layer capacitance photoresistance pattern 294b and upper layer circuit photoresistance pattern 294c only were removed the thickness of part.In the present embodiment, ashing operation for example is an oxygen electricity slurry ashing operation.Then, second metal level 292 that is originally covered by pixel electrode photoresistance pattern 294d zone is carried out an etching work procedure, to remove second metal level 292 corresponding to pixel electrode photoresistance pattern 294d, the electrode layer 290 that exposes part is with as pixel electrode 296, shown in Fig. 2 I.At last, remove remaining second photoresist layer 294.Carry out upper layer circuit photoresistance pattern 294c, source/drain photoresistance pattern 294a, in layer capacitance photoresistance pattern 294b and the pixel electrode photoresistance pattern 294d ashing operation, pixel region P more comprises outward and removes connection pad photoresistance pattern 294e.Then, remove second metal level 292 corresponding to connection pad photoresistance pattern 294e to form a connection pad pattern 298.
Fig. 2 J illustrates to after forming second metal level 292; more comprise and form a protective layer 293 on second metal level 292; and when coming patterning second metal level 292 with electrode layer 290 via the second half modes or grey mode light shield M2; while patterning protective layer 293 is so that protective layer 293 has identical pattern with second metal level 292.In the present embodiment, the material of protective layer 293 for example is silicon nitride, silica or organic material, and the method for its formation for example is with physical vaporous deposition or chemical vapour deposition technique.
In sum, in above-mentioned one pixel structure process method, use the first half modes or grey mode light shield M1 to form lower floor's line pattern 270, transistor pattern 250 and following layer capacitance pattern 260 (illustrating) as Fig. 2 C.Use another mask patternization and carry out ion doping D, the one source pole 250a/ drain electrode 250b district (illustrating) of exposed portions serve lower floor line pattern 270, following layer capacitance pattern 260 and transistor pattern 250 as Fig. 2 E.Then, use the second half modes or grey mode light shield M2 to finish the making of dot structure 200.Owing to use less light shield number to make dot structure 200, thus compared to prior art five road light shield operations, can reduce cost of manufacture and reduce the tediously long defective that manufacture method caused.
Present embodiment proposes a kind of dot structure 200, be suitable for finishing by the above-mentioned steps made, please refer to Fig. 2 I, dot structure 200 comprises that substrate 210, patterning are laminated 256, pattern dielectric layer 280, patterned electrode layer 290 and patterning second metal level 292.Wherein substrate 210 has a pixel region P.Patterning laminated 256 is arranged on the substrate 210, patterning laminated 256 is included in the transistor pattern 250 and following layer capacitance pattern 260 of pixel region P, and the lower floor's line pattern 270 outside pixel region P, wherein transistor pattern 250 comprises the first metal layer 220, gate insulation layer 230 and semiconductor layer 240 respectively with following layer capacitance pattern 260, and lower floor's line pattern 270 comprises the first metal layer 220 and gate insulation layer 230, in other embodiments, lower floor's line pattern 270 can only be made of the first metal layer 220.280 of pattern dielectric layer are disposed on the substrate 210 and covering transistor pattern 250, layer capacitance pattern 260 and lower floor's line pattern 270 down, and pattern dielectric layer 280 exposes part lower floor line pattern 270, the part source electrode 250a/ drain electrode 250b district of layer capacitance pattern 260 and transistor pattern 250 down.Patterned electrode layer 290 is disposed on the pattern dielectric layer 280, and patterning second metal level 292 that is disposed on the patterned electrode layer 290 comprises layer capacitance pattern 262 on a upper layer circuit pattern 272 and the one source pole 252a/ drain electrode 252b pattern and.Upper layer circuit pattern 272, source electrode 252a/ drain electrode 252b pattern and go up layer capacitance pattern 262 and be electrically connected to lower floor's line pattern 270, source electrode 250a/ drain electrode 250b district and layer capacitance pattern 260 down respectively wherein, and patterning second metal level 292 in the pixel region P exposes patterned electrode layer 290 partly as a pixel electrode 296.In the present embodiment, the electrode layer 290 that outer patterning second metal level 292 of pixel region P more exposes part is as a connection pad 298, and connection pad 298 connects upper layer circuit pattern 272.
In addition, in one embodiment of this invention, dot structure 200 can also comprise that a protective layer 293 is disposed on patterning second metal level 292, and shown in Fig. 2 J, wherein the material of protective layer 293 for example is silica, silicon nitride or organic material.
[second embodiment]
Fig. 3 A～Fig. 3 I is the production method of pixel structure of second embodiment.The manufacture method and first embodiment of the dot structure 300 of present embodiment are similar, in the present embodiment, form the production method of transistor pattern 250, following layer capacitance pattern 260 and lower floor's line pattern 270 and pattern dielectric layer 280 and electrode layer 290, shown in Fig. 3 A～3D, itself and first embodiment Fig. 2 A～2D are similar, do not add at this and give unnecessary details.
In addition, please refer to Fig. 3 E, present embodiment is after pattern dielectric layer 280 and electrode layer 290, form doping semiconductor layer 240 ' on electrode layer 290, and make doping semiconductor layer 240 ' be connected to the source electrode 250a/ drain electrode 250b district of lower floor's line pattern 270, following layer capacitance pattern 260 and transistor pattern 250.Doping semiconductor layer 240 ' described here comprises P type doping semiconductor layer or N type doping semiconductor layer.Then, shown in Fig. 3 F, carry out a little shadow operation via the second half modes or grey mode light shield M2, form and similar second photoresist layer 294 of first embodiment, then, shown in Fig. 3 G, serve as that cover curtain is when carrying out an etching work procedure to second metal level 292 with electrode layer 290 with second photoresist layer 294, also the etching doping semiconductor layer 240 ', and the etching work procedure that is carried out can utilize dry-etching operation or Wet-type etching operation here.
Afterwards, similar with first embodiment, carry out an ashing operation, etching work procedure and removing photoresistance operation, utilize second photoresist layer 294 to have different thickness, remove second metal level 292 corresponding to pixel electrode photoresistance pattern 294d (being illustrated in 3G), the electrode layer 290 that exposes part is with as pixel electrode 296, shown in Fig. 3 H.In addition, outside pixel region P, form a pair of should be in the upper layer circuit pattern 272 of upper layer circuit photoresistance pattern 294c, in pixel region P, form corresponding to the source electrode 252a/ drain electrode 252b of source/drain photoresistance pattern 294a (being illustrated in Fig. 3 G) and corresponding to the last layer capacitance pattern 262 of last layer capacitance photoresistance pattern 294b (being illustrated in Fig. 3 G).
Fig. 3 I illustrates as Fig. 2 J of first embodiment, for after forming second metal level 292, also comprises forming a protective layer 293 on second metal level 292, does not add at this and gives unnecessary details.
In sum, please refer to Fig. 3 H, present embodiment proposes a kind of dot structure 300, and it is suitable for being finished by the above-mentioned steps made.Dot structure 300 is similar with dot structure 200, and dot structure 300 also comprises a doping semiconductor layer 240 ', it is disposed at patterning second metal level 292 bottoms, so that patterning second metal level 292 contacts with other rete via doping semiconductor layer 240 ', wherein doping semiconductor layer 240 ' for example is P type doping semiconductor layer or N type doping semiconductor layer, and the method for its formation for example is with physical vaporous deposition or chemical vapour deposition technique.In addition, dot structure 300 can comprise that more a protective layer 293 is disposed on patterning second metal level 292, and shown in Fig. 2 J, wherein the material of protective layer 293 for example is silica, silicon nitride or organic material.
In sum, production method of pixel structure proposed by the invention is suitable for utilizing less light shield operation to make, and compared to five road light shield operations of prior art, can significantly reduce production costs and improves productive rate.In addition, a production method of pixel structure of the present invention uses half mode or the grey mode light shield that have had the volume production technology to make, so the present invention has the high advantage of volume production feasibility.In addition, half mode that present technique is used or grey mode light shield also can be replaced by the exposure that two light shields carry out different-energy respectively, do not limit the kind of light shield at this.Moreover in a dot structure of the present invention, transistor uses the structure of bottom grid, and it can reduce backlight (backlight) to transistorized influence, reduces photoelectric current, and then keeps performance of transistors.In addition, transistorized structure is adopted the design of etch stop layer (Etching Stop Layer), thus can promote the characteristic of driving component, and improve the production qualification rate.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when being as the criterion of being considered as being defined with accompanying claims.
Claims (20)
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924035B (en) * | 2008-08-22 | 2013-05-29 | 台湾积体电路制造股份有限公司 | Method for forming semiconductor element and gate structure thereof |
| CN102023431B (en) * | 2009-09-18 | 2013-06-12 | 北京京东方光电科技有限公司 | Thin film transistor liquid crystal display (TFT-LCD) array substrate and manufacturing method thereof |
| CN103227177A (en) * | 2012-09-20 | 2013-07-31 | 友达光电股份有限公司 | Pixel structure and thin film transistor |
| CN103441137A (en) * | 2013-04-24 | 2013-12-11 | 友达光电股份有限公司 | Electroluminescent display panel and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101924035B (en) * | 2008-08-22 | 2013-05-29 | 台湾积体电路制造股份有限公司 | Method for forming semiconductor element and gate structure thereof |
| CN102023431B (en) * | 2009-09-18 | 2013-06-12 | 北京京东方光电科技有限公司 | Thin film transistor liquid crystal display (TFT-LCD) array substrate and manufacturing method thereof |
| CN103227177A (en) * | 2012-09-20 | 2013-07-31 | 友达光电股份有限公司 | Pixel structure and thin film transistor |
| CN105261655A (en) * | 2012-09-20 | 2016-01-20 | 友达光电股份有限公司 | Thin film transistor |
| CN103227177B (en) * | 2012-09-20 | 2016-04-13 | 友达光电股份有限公司 | Pixel structure |
| CN105261655B (en) * | 2012-09-20 | 2018-03-09 | 友达光电股份有限公司 | Thin film transistor |
| CN103441137A (en) * | 2013-04-24 | 2013-12-11 | 友达光电股份有限公司 | Electroluminescent display panel and manufacturing method thereof |
| CN103441137B (en) * | 2013-04-24 | 2015-10-28 | 友达光电股份有限公司 | Electroluminescent display panel and manufacturing method thereof |
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| CN100492617C (en) | 2009-05-27 |
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