CN100547800C - Thin film transistor array substrate and electronic ink display device - Google Patents
Thin film transistor array substrate and electronic ink display device Download PDFInfo
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- CN100547800C CN100547800C CNB200610149946XA CN200610149946A CN100547800C CN 100547800 C CN100547800 C CN 100547800C CN B200610149946X A CNB200610149946X A CN B200610149946XA CN 200610149946 A CN200610149946 A CN 200610149946A CN 100547800 C CN100547800 C CN 100547800C
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- 239000010409 thin film Substances 0.000 title claims abstract description 96
- 239000000758 substrate Substances 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 239000002245 particle Substances 0.000 claims description 45
- 239000000463 material Substances 0.000 claims description 34
- 239000012530 fluid Substances 0.000 claims description 14
- 239000003094 microcapsule Substances 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 description 22
- 230000005684 electric field Effects 0.000 description 11
- 239000004020 conductor Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- -1 ITO) Chemical compound 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical group [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
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Abstract
The invention discloses a thin film transistor array substrate and an electronic ink display device. The pixel comprises a thin film transistor and a pixel electrode, and the pixel electrode is positioned above the thin film transistor and is electrically connected with the thin film transistor. The thin film transistor comprises a first grid electrode, a first insulating layer, a semiconductor layer, a source electrode, a drain electrode, a second insulating layer and at least one second grid electrode, wherein the second grid electrode is arranged on the second insulating layer above the semiconductor layer, and the second grid electrode is electrically connected with the first grid electrode. The second gate electrode can reduce a leakage current phenomenon through the thin film transistor.
Description
Technical field
The present invention relates to a kind of array base palte (array substrate) and display unit (displaydevice), and particularly relevant for a kind of thin-film transistor array base-plate (TFT array substrate) and electronic ink display device (E-ink display device).
Background technology
Along with the fast development of Display Technique, the display unit of many novelties constantly is developed, and wherein, electronic ink display device has plurality of advantages such as low power consumption, slimming, long-life, deflection, and has the potentiality of development.
The electronic ink display device initial development is in the 1970's, and its characteristic is to comprise many charged beads, and wherein the one side of ball is a white, and another side is a black.When electric field changed, club rotated up and down, and presented different colours.The electronic ink display device of the second generation is to be developed in generation nineteen ninety, and its characteristic is to replace traditional bead with microcapsules (microcapsules), and in microcapsules the oil (oil) and charged white particle of filling color.Make white particle up or move down via the control of external electric field, wherein when white particle up (near reader's direction time) then demonstrate white, when white particle down time the (away from reader's direction time) then shows fuel-displaced color.
Figure 1A is the structural representation of a kind of electronic ink display device of the prior art.Figure 1B is the vertical view of the thin-film transistor array base-plate in the electronic ink display device among Figure 1A, and wherein Figure 1A is the section along the A-A ' line of Figure 1B.Please be simultaneously with reference to Figure 1A and Figure 1B, electronic ink display device 10 comprises thin-film transistor array base-plate 20 and front panel 30, and front panel 30 is disposed at a side of thin-film transistor array base-plate 20.
Thin-film transistor array base-plate 20 comprises substrate 21, multi-strip scanning line 22, many data wires 23, a plurality of thin-film transistor 24, dielectric layer 25 and a plurality of pixel electrodes 26.Wherein, scan line 22 defines a plurality of pixel region 21a with data wire 23 with substrate 21, and each thin-film transistor 24 is arranged in corresponding pixel region 21a, and is electrical connected with corresponding scanning line 22 and data wire 23.Can see that by Figure 1A thin-film transistor 24 has grid 24a, gate insulation layer 24b, semiconductor layer 24c, source electrode 24d and drain electrode 24e.Because 24 of thin-film transistors have single grid 24a and are positioned at semiconductor layer 24c below, so this thin-film transistor 24 is called bottom gate thin film transistor (bottom gate TFT) again.
Referring again to Figure 1A and Figure 1B, dielectric layer 25 covers above-mentioned scan line 22, data wire 23 and thin-film transistor 24, and dielectric layer 25 has opening H and the part drain electrode 24e of exposed film transistor 24.Pixel electrode 26 is disposed on the dielectric layer 25, and pixel electrode 26 electrically connects with thin-film transistor 24 by opening H.Thus, can apply data voltage (data voltage) with thin-film transistor 24 to pixel electrode 26 by scan line 22, data wire 23.It should be noted that pixel electrode 26 can be arranged on the top of thin-film transistor 24 in order to reach best aperture opening ratio.
Hold above-mentionedly, when pixel electrode 26 is applied data voltage, can form electric field between pixel electrode 26 and the transparent electrode layer 34, and drive the ink particulate 36a in the electronic ink material layer 36.In addition, in the process of frame updating, for non-start pixel, can to its grid 24a and corresponding scanning line 22 apply a low gate voltage signal (low gate voltage, Vgl) so that thin-film transistor 24 is in closed condition.
From the above, pixel electrode 26 is tops that correspondence is arranged on thin-film transistor 24, and when therefore applying positive data voltage, pixel electrode 26 can be played the part of another grid of thin-film transistor 24.That is to say that the electric charge redistribution of the electric field that electric charge produced on the pixel electrode 26 in will induced semiconductor layer 24c causes producing passage in semiconductor layer 24c.So, the electric charge on the pixel electrode 26 just can leak via semiconductor layer 24c, promptly produces leakage phenomenon.So the data voltage that is applied on the pixel electrode 26 just can't stably be kept, cause the display quality deterioration of electronic ink display device 10.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of thin-film transistor array base-plate that can reduce leakage phenomenon.
Another object of the present invention provides a kind of above-mentioned thin-film transistor array base-plate that utilizes, and promotes the electronic ink display device of display quality.
For realizing above-mentioned or other purpose, the present invention proposes a kind of thin-film transistor array base-plate, and its structure has comprised substrate, multi-strip scanning line, many data wires and a plurality of pixel.Scan line and data wire are disposed on the substrate.Each pixel is electrically connected at least one distribution and at least one data wiring of scanning, and each pixel comprises thin-film transistor and the pixel electrode that electrically connects with thin-film transistor, and pixel electrode is the top that is positioned at thin-film transistor, and wherein thin-film transistor comprises first grid, first insulating barrier, semiconductor layer, source electrode, drain electrode, second insulating barrier and at least one second grid.First grid and corresponding scanning line electrically connect.First insulating barrier covers first grid.Semiconductor layer is disposed on first insulating barrier of the first grid earthwork.Source electrode and drain configuration cover semiconductor layer on semiconductor layer and partly, and source electrode and corresponding data line electrically connect.Second insulating barrier covers source electrode, drain electrode and semiconductor layer.Second grid is disposed on second insulating barrier of semiconductor layer top, and second grid and first grid are electrical connected.
According to the described thin-film transistor array base-plate of one embodiment of the invention, wherein first insulating barrier and second insulating barrier have one first opening, and this first opening exposed portion first grid is so that second grid electrically connects first grid by first opening.
Described according to one embodiment of the invention, thin-film transistor array base-plate also comprises many common leads, and these are disposed on the substrate.Each common lead is parallel with scan line, and between two adjacent scan lines.
According to the described thin-film transistor array base-plate of one embodiment of the invention, wherein the material of pixel electrode be selected from indium tin oxide, indium-zinc oxide, metal and combination thereof wherein one.
The present invention proposes a kind of electronic ink display device in addition, and it comprises above-mentioned thin-film transistor array base-plate, and a front panel.Wherein, front panel is disposed at a side of thin-film transistor array base-plate, and comprises a capping, a transparent electrode layer and an electronic ink material layer.Transparent electrode layer is disposed at the capping below, and electronic ink material layer is disposed between transparent electrode layer and the thin-film transistor array base-plate.
According to the described electronic ink display device of one embodiment of the invention, wherein first insulating barrier and second insulating barrier have one first opening, and the first opening exposed portion first grid is so that second grid electrically connects first grid by first opening.
Described according to one embodiment of the invention, electronic ink display device also comprises many common leads, and these common conductor configurations are on substrate.Each common lead is parallel with scan line, and between two adjacent scan lines.
According to the described electronic ink display device of one embodiment of the invention, wherein the material of pixel electrode be selected from indium tin oxide, indium-zinc oxide, metal and combination thereof one of them.
According to the described electronic ink display device of one embodiment of the invention, wherein electronic ink material layer comprises a plurality of electric ink particles and a transparent fluid.
According to the described electronic ink display device of one embodiment of the invention, above-mentioned electric ink particle comprises a plurality of dark colored particles and a plurality of light tone particle, wherein, those dark colored particles and light tone distribution of particles in transparent fluid, and respectively carry different electrically.
According to the described electronic ink display device of one embodiment of the invention, also comprise a plurality of microcapsules, above-mentioned dark colored particles, light tone particle and transparent fluid are to be enclosed in the microcapsules.
According to the described electronic ink display device of one embodiment of the invention, also comprise a plurality of micro grooves, dark colored particles, light tone particle and transparent fluid are to be placed in the micro groove scope.
According to the described electronic ink display device of one embodiment of the invention, wherein electronic ink material layer comprises a plurality of electric ink particles, and one side of something of each electric ink particle is a light tone, and another one side of something is dark-coloured, and respectively carry different electrically.
Thin-film transistor on the thin-film transistor array base-plate proposed by the invention, the second grid that it has first grid and electrically connects with first grid, and second grid is arranged between semiconductor layer and the pixel electrode.So the electric field that electric charge produced on the second grid maskable pixel electrode makes can not produce passage in the semiconductor layer.That is to say that the on off state of thin-film transistor can not be subjected to the influence of pixel electrode, and then can reduce leakage phenomenon.In addition, even the scope in the complete respective pixel of pixel electrode zone and be arranged on the top of thin-film transistor also can not influence the operation of thin-film transistor, and then can promote aperture ratio of pixels.In addition, utilize thin-film transistor array base-plate proposed by the invention and the electronic ink display device made will have superior display quality.
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below.
Description of drawings
Figure 1A is the structural representation of a kind of electronic ink display device of prior art;
Figure 1B is the vertical view of the thin-film transistor array base-plate in the electronic ink display device among Figure 1A, and wherein Figure 1A is the section along the A-A ' line of Figure 1B;
Fig. 2 A is the vertical view of a kind of thin-film transistor array base-plate in the preferred embodiment of the present invention;
Fig. 2 B is the generalized section along the B-B ' line among Fig. 2 A;
Fig. 2 C is the generalized section along the C-C ' line among figure Fig. 2 A;
Fig. 3 A is the structural representation of a kind of electronic ink display device in the preferred embodiment of the present invention;
Fig. 3 B is for being the structural representation of the electronic ink display device of another embodiment.
Wherein, Reference numeral:
10,200,200a: electronic ink display device 20,100: thin-film transistor array base-plate
21,110: substrate 21a, 110a: pixel region
22,120: scan line 23,130: data wire
24,142: thin-film transistor 24a: grid
24b: gate insulation layer 24c: semiconductor layer
24d, 142d: source electrode 24e, 142e: drain electrode
25,150: dielectric layer 26,144: pixel electrode
30,300: front panel 32,310: capping
34,320: transparent electrode layer 36,330,330 ': electronic ink material layer
36a, 330a: electric ink particulate 140: pixel
142a: first grid 142b: first insulating barrier
142c: semiconductor layer 142f: second insulating barrier
142g: second grid 160: common lead
330a ': microcapsules 330a '-1: dark colored particles
330a '-2: light tone particle 330a '-3: transparent fluid
H: opening H1: first opening
H2: the second opening L1: channel layer
L2: ohmic contact layer
Embodiment
Fig. 2 A is the vertical view of a kind of thin-film transistor array base-plate in the preferred embodiment of the present invention.Fig. 2 B is the generalized section along the B-B ' line among Fig. 2 A.Fig. 2 C is the generalized section along the C-C ' line among Fig. 2 A.
Earlier jointly with reference to Fig. 2 A and Fig. 2 B, thin-film transistor array base-plate 100 comprises substrate 110, multi-strip scanning line 120, many data wires 130 and a plurality of pixel 140.Wherein, scan line 120 is disposed on the substrate 110 with data wire 130.Pixel 140 is electrically connected to corresponding scan line 120 and corresponding data wire 130, and pixel 140 comprises thin-film transistor 142 and the pixel electrode 144 that electrically connects with thin-film transistor 142, and pixel electrode 144 is the tops that are positioned at thin-film transistor 142.Thin-film transistor 142 comprises first grid 142a, the first insulating barrier 142b, semiconductor layer 142c, source electrode 142d, drain electrode 142e, the second insulating barrier 142f and at least one second grid 142g.First grid 142a and corresponding scanning line 120 electrically connect.The first insulating barrier 142b covers first grid 142a.Semiconductor layer 142c is disposed on the first insulating barrier 142b of first grid 142a top.Source electrode 142d is disposed at semiconductor layer 142c with drain electrode 142e and upward and partly covers semiconductor layer 142c, and source electrode 142d and corresponding data line 130 electrically connect.The second insulating barrier 142f covers source electrode 142d, drain electrode 142e and semiconductor layer 142c.Second grid 142g is disposed on the second insulating barrier 142f of semiconductor layer 142c top, and second grid 142g and first grid 142a are electrical connected.
It should be noted that this thin-film transistor 142 has first grid 142a and second grid 142g, second grid 142g is between semiconductor layer 142c and pixel electrode 144, and second grid 142g is electrical connected with first grid 142a.
Mode about first grid 142a and second grid 142g are electrical connected is exemplified below.Please jointly with reference to Fig. 2 A and Fig. 2 C, in one embodiment, the first insulating barrier 142b and the second insulating barrier 142f of thin-film transistor 142 have one first opening H1.This first opening H1 exposes first grid 142a partly.In the case, second grid 142g promptly can electrically connect first grid 142a by the first opening H1.Certainly, the present invention is not limited to above-mentioned mode, also can utilize other suitable mode to electrically connect first grid 142a and second grid 142g.
Shown in Fig. 2 B,, first grid 142a during conducting membrane transistor 142, on second grid 142g, also applied the voltage identical simultaneously with first grid 142a when being applied voltage.Hold above-mentioned, when making pixel electrode 144 be applied with positive data voltage when thin-film transistor 142 unlatchings, because second grid 142g is configured between semiconductor layer 142c and the pixel electrode 144, so will be shielded by second grid 142g by the electric field that electric charge produced on the pixel electrode 144, also be produced leakage phenomenon with regard to not making semiconductor layer 142c produce passage.In other words, the on off state of thin-film transistor 142 can not be subjected to the influence of pixel electrode 144, and only relevant with the voltage signal that puts on first grid 142a.
Compared to existing technologies, the semiconductor layer 142c among the present invention can not be subjected to the influence of pixel electrode 144 and produce passage, so the electric charge on the pixel electrode 144 just can not leak via semiconductor layer 142c.In other words, the phenomenon that thin-film transistor array base-plate 100 can reduce leakage current takes place, and makes the data voltage that is applied on the pixel electrode 144 can keep the long time.In addition, because thin-film transistor 142 is double-grid structures, so even the scope of the regional 110a of pixel electrode 144 complete respective pixel and being provided with, pixel electrode 144 also can not influence the on off state of thin-film transistor 142.Thus, can promote the aperture opening ratio and the display area of each pixel 140.
Please continue the A with reference to Fig. 2, in one embodiment, the material of substrate 110 for example is glass, quartz or other suitable material.Scan line 120 can be metal, alloy with the material of data wire 130, or other suitable electric conducting material.
In preferred embodiment, first grid 142a is identical retes with scan line 120.The material of the first insulating barrier 142b and the second insulating barrier 142f can be silica, silicon nitride, silicon oxynitride or other suitable dielectric material.The material of semiconductor layer 142c can be amorphous silicon, polysilicon or other suitable semiconductor material.In one embodiment, semiconductor layer 142c comprises a channel layer L1 and an ohmic contact layer L2, and ohmic contact layer L2 is disposed between channel layer L1, source electrode 142d and the drain electrode 142e, and the material of ohmic contact layer L2 can be through doped amorphous silicon.Source electrode 142d for example is chromium, aluminium alloy or other suitable electric conducting material with the material of drain electrode 142e, and source electrode 142d, drain electrode 142e are identical retes with data wire 130.Second grid 142g is metal, alloy or other suitable electric conducting material.The material of pixel electrode 144 can be indium tin oxide (indium tin oxide, ITO), indium-zinc oxide (indium zincoxide, IZO), one of metal, above-mentioned material combination or other suitable electric conducting material.
In addition, in order to promote the usefulness that each pixel electrode 144 keeps data voltage, in one embodiment, the thin-film transistor array base-plate 100 that is illustrated as Fig. 2 A can comprise many common leads 160, these common leads 160 are disposed on the substrate 110, each common lead 160 is parallel with scan line 120, and between adjacent two scan lines 120.More specifically, each pixel electrode 144 constitutes storage capacitors (storage capacitor) with the common lead 160 that is positioned at these pixel electrode 144 belows, and it is more stable that the data voltage that is applied on each pixel electrode 144 is able to, and further makes each pixel 140 obtain better display effect.But in other embodiments, thin-film transistor array base-plate is the common lead of tool not also, looks closely demand and decides.
In sum, in thin-film transistor array base-plate 100 of the present invention, its thin-film transistor 142 is double-grid structures.Owing to the electric field that electric charge produced on the second grid 142g maskable pixel electrode 144 that is arranged at 144 of semiconductor layer 142c and pixel electrodes.So semiconductor layer 142c can not be subjected to the influence of pixel electrode 144 and produce passage.That is to say that the electric charge on the pixel electrode 144 can not leak out via semiconductor layer 142c when thin-film transistor 142 settings are closed.So thin-film transistor array base-plate 100 of the present invention will have following advantage: the phenomenon that can reduce leakage current takes place, and the voltage that is applied on the pixel electrode 144 can be therefore more stable, and can promote the aperture opening ratio and the display area of each pixel 140.
Above-mentioned thin-film transistor array base-plate 100 can be used for forming an electronic ink display device.Fig. 3 A is the structural representation of a kind of electronic ink display device in the preferred embodiment of the present invention.Shown in Fig. 3 A, electronic ink display device 200 comprises above-mentioned thin-film transistor array base-plate 100 and front panel 300, and front panel 300 is disposed at a side of thin-film transistor array base-plate 100, and front panel 300 comprises a capping 310, a transparent electrode layer 320 and an electronic ink material layer 330.Transparent electrode layer 320 is disposed at capping 310 belows, and electronic ink material layer 330 then is disposed between transparent electrode layer 320 and the thin-film transistor array base-plate 100.
About each member of thin-film transistor array base-plate 100 as mentioned above, do not repeated at this.It should be noted that the electronic ink display device 200 of doing as Fig. 3 A has above-mentioned thin-film transistor array base-plate 100, particularly thin-film transistor 142 wherein has double-grid structure.Therefore, be arranged at the electric field that electric charge produced on the second grid 142g maskable pixel electrode 144 of 144 of semiconductor layer 142c and pixel electrodes, make semiconductor layer 142c can not be subjected to the influence of pixel electrode 144 and produce passage.That is to say that the electric charge on the pixel electrode 144 can not let out via semiconductor layer 142c, therefore can reduce the phenomenon of leakage current when thin-film transistor 142 settings are closed.
Because the phenomenon of leakage current reduces, the voltage that is applied on the pixel electrode 144 can keep the long time, and each pixel can stably be shown.In addition, even the scope of the complete respective pixel of pixel electrode 144 zone 110a and being provided with does not influence the operation of thin-film transistor 142 yet, and then can promote each aperture ratio of pixels and display area.
Referring again to Fig. 3 A, in one embodiment, the material of capping 310 can be glass, quartz, acryl or other suitable material.The material of transparent electrode layer 320 for example is indium tin oxide, indium-zinc oxide or other transparent material that can conduct electricity.
In one embodiment, electronic ink material layer 330 comprises a plurality of electric ink particle 330a, and one side of something of each electric ink particle 330a is a light tone, and another one side of something is dark-coloured, and respectively carry different electrically.When the electric field between pixel electrode 144 and the transparent electrode layer 320 changed, the electric ink particle 330a in the electronic ink material layer 330 just can be driven, and makes electronic ink display device 200 display frames.
Electronic ink material layer 330 is not defined as above-mentioned kind, and Fig. 3 B is the structural representation of the electronic ink display device of another embodiment.In the electronic ink display device 200a of this embodiment, contain a plurality of dark colored particles 330a '-1, a plurality of light tone particle 330a '-2 and a transparent fluid 330a '-3 in the electronic ink material layer 330 '.Wherein, these dark colored particles 330a '-1 and light tone particle 330a '-2 are distributed among the transparent fluid 330a '-3, and respectively carry different electrically.When the electric field between pixel electrode 144 and the transparent electrode layer 320 changed, dark colored particles 330a '-1 and light tone particle 330a '-2 just can move up or down according to direction of an electric field, and then made each pixel show required picture.In a further embodiment, dark colored particles 330a '-1, light tone particle 330a '-2 and transparent fluid 330a '-3 can be enclosed among a plurality of microcapsules 330a '.
In another embodiment, dark colored particles 330a '-1, light tone particle 330a '-2 and transparent fluid 330a '-3 are placed in a plurality of micro grooves (microcup) scope.In another embodiment, dark colored particles 330a '-1, light tone particle 330a '-2 and transparent fluid 330a '-3 can not be subjected to the restriction of side direction structure and move in active region.Certainly, in other embodiments, dark colored particles 330a '-1, light tone particle 330a '-2 and transparent fluid 330a '-3 can cooperate various framework to dispose.Hold above-mentionedly,, and make it have good display quality because electronic ink display device 200 uses above-mentioned thin-film transistor array base-plate 100.
In sum, thin-film transistor array base-plate, electronic ink display device proposed by the invention have following advantage at least:
(1) thin-film transistor in the thin-film transistor array base-plate of the present invention, it is by the effect of double-grid structure, and can reduce the leakage current that leaks out via thin-film transistor in the specified down periods.
(2) owing to leakage current reduces, so the voltage quasi position that is applied on pixel electrode can be therefore better stable.
(3) even pixel electrode cover film transistor and being provided with does not influence the operation of thin-film transistor, so the present invention can promote each aperture ratio of pixels and display area yet.
(4) because the leakage current of thin-film transistor array base-plate proposed by the invention is less, the display unit of making so utilize this thin-film transistor array base-plate can have good display quality.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; being familiar with those of ordinary skill in the art ought can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (10)
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| CNB200610149946XA CN100547800C (en) | 2006-10-19 | 2006-10-19 | Thin film transistor array substrate and electronic ink display device |
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| CNB200610149946XA CN100547800C (en) | 2006-10-19 | 2006-10-19 | Thin film transistor array substrate and electronic ink display device |
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| CN100547800C true CN100547800C (en) | 2009-10-07 |
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| JP5371341B2 (en) * | 2007-09-21 | 2013-12-18 | 株式会社半導体エネルギー研究所 | Electrophoretic display device |
| CN101950113B (en) * | 2009-07-10 | 2013-06-19 | 元太科技工业股份有限公司 | Display panel |
| CN102473733B (en) * | 2009-07-18 | 2015-09-30 | 株式会社半导体能源研究所 | The method of semiconductor device and manufacture semiconductor device |
| KR101977152B1 (en) | 2010-04-02 | 2019-05-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
| CN102130136B (en) * | 2010-11-25 | 2013-04-10 | 华映视讯（吴江）有限公司 | Pixel structure and bigrid pixel structure |
| CN104319279B (en) | 2014-11-10 | 2017-11-14 | 京东方科技集团股份有限公司 | Array base palte and its manufacture method, display device |
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| CN110233169B (en) * | 2019-06-19 | 2021-08-03 | 京东方科技集团股份有限公司 | Pixel definition layer, display device, array substrate and manufacturing method thereof |
| CN110690228B (en) * | 2019-09-06 | 2022-03-08 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and display panel |
| JP7444436B2 (en) | 2020-02-05 | 2024-03-06 | 三国電子有限会社 | liquid crystal display device |
| CN113777847B (en) * | 2021-09-10 | 2024-12-10 | 京东方科技集团股份有限公司 | Array substrate and display device |
| CN114995008A (en) * | 2022-04-25 | 2022-09-02 | 江西兴泰科技有限公司 | Ink screen TFT backplane |
| CN115188831B (en) | 2022-09-09 | 2022-12-23 | 惠科股份有限公司 | Thin film transistor structure, display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040012023A1 (en) * | 2002-07-16 | 2004-01-22 | Te-Cheng Chung | Thin film transistor liquid crystal display and method of forming the same |
| US20040191970A1 (en) * | 2003-03-28 | 2004-09-30 | Au Optronics Corp. | Dual gate layout for thin film transistor |
| CN1751393A (en) * | 2003-02-14 | 2006-03-22 | 佳能株式会社 | Solid-state imaging equipment and radiation imaging equipment |
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- 2006-10-19 CN CNB200610149946XA patent/CN100547800C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040012023A1 (en) * | 2002-07-16 | 2004-01-22 | Te-Cheng Chung | Thin film transistor liquid crystal display and method of forming the same |
| CN1751393A (en) * | 2003-02-14 | 2006-03-22 | 佳能株式会社 | Solid-state imaging equipment and radiation imaging equipment |
| US20040191970A1 (en) * | 2003-03-28 | 2004-09-30 | Au Optronics Corp. | Dual gate layout for thin film transistor |
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