CN100530709C - Led接合结构以及led接合结构的制造方法 - Google Patents
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Abstract
一种LED芯片，包括适合热超声或热压接合的焊垫，例如Sn、AuSn或其它金属。焊垫的物理尺寸被选定为不管是否有焊剂，都可以减少或防止在热压或热超声接合的过程中焊料被挤出。在一些实施例中，AuSn焊垫被设计成可接受30g至70g或更大的作用力而不会被挤出。
Description
临时申请的交叉引用
本申请要求于2004年4月28日提交的序号为No.60/565960、名称为“具有小体积焊垫的LED”的美国临时申请的权益。
背景技术
本发明涉及半导体器件，具体地说，涉及一种以结向下(junction-down)的结构安装在基座(submount)上的发光二极管。
GaN基发光二极管(LED)通常包括其上沉积着多个GaN基外延层的绝缘或半导体衬底，例如SiC或蓝宝石。外延层包括具有在受到激励时发光的p-n结的有源区。一般的LED是衬底侧朝下地安装在基座上，基座也被称作封装或引线框架(以下称作“基座”)。图4示意性地示出了常规的LED，它具有n型SiC衬底10以及有源区12，该有源区12包括生长在衬底上并被仿制成台面(mesa)的n-GaN基层14和p-GaN基层16。金属p电极18沉积在p-GaN层16上，并且在p电极18上，焊接线28形成在焊垫20上。导电衬底上的n电极22利用导电的环氧树脂26与金属基座24连接。在常规的工艺中，导电的环氧树脂26(通常为加银环氧树脂)被沉积在基座上，并且LED被压入到环氧树脂26中。然后使环氧树脂热固化，使其变硬，形成用于LED芯片的稳定且导电的底座。有源区12内产生的光大部分被传输到衬底中并被环氧树脂26吸收。
LED的结向下(或“倒装芯片”)安装包括将LED衬底侧朝上地安装在基座上。然后，光通过透明衬底提取和放射。对于安装SiC基LED来说，结向下安装是特别理想的技术。由于SiC具有比GaN高的折射率，有源区内产生的光在GaN/SiC的界面处不会向内反射(即反射回GaN基层)。SiC基LED的结向下安装可以改善现有技术中已知的某些芯片倒装技术的效果。SiC LED的结向下封装还具有其它的优点，例如改善热损耗，根据芯片的特定应用，这可能是需要的。
美国专利No.6,169,294描述了一种以倒装芯片定位方式安装在导电硅衬底上的III族(Group III)氮基LED，其蓝宝石生长衬底形成二极管的发光面。采用焊料金属以将二极管的外延区附着到导电衬底上。
日本公开No.58207682使用位于发光二极管的金电极的一个表面上的铅-锡焊料层，来提高接合的可靠性。这一结构使得金电极中的焊料层可以利用最小压焊与基座良好连接。
美国专利申请公开No.20030045015描述了一种倒装芯片接合技术，采用具有特定几何图案的导电环氧树脂来避免LED的外延有源层之间或当中的分路或短路。
日本公开No.2002280415描述了一种倒装芯片的定位技术，其中金属触点将同样的材料(金)用在所有的前驱体元件(precursorelement)上，之后进行与超声波结合的热压接合。
结向下安装的一个问题如图5所示。即，当采用常规技术把芯片结向下地安装在导电的基座或封装上时，导电的模片(die)附着材料26沉积在芯片和/或基座24上，并且芯片被压入到基座24内。或者，导电的模片附着材料26可以包括焊料，例如Sn或Au/Sn，在这种情况下，通过热压接合将芯片接合到基座24上。
热压接合是一种利用热和压力将器件安装到衬底或基座上、由此在器件和基座之间产生导电接合的技术。通常，采用真空筒夹来夹取该器件，并将其物理地放置成与基座相接触，该基座由能够与所采用的焊料共同形成合金的材料制成。一旦器件与基座接触，作用力就通过筒夹被施加给器件。通过热和压力的结合，焊料与基座熔合成合金，这样器件就被焊接在适当的位置上。为了形成这种接合，该器件必须包括由Sn等金属制成的金属垫层，该金属垫层在被施加热和压力的情况下与基座形成合金接合。也可以采用具有足够低熔点的其它金属和合金，例如Au/Sn、Pb/Sn和Ag/Sn。一些适当的基座材料可以是银和金。
通常的热压工艺利用大约30至50g的最小作用力将模片接合到基座上。但是，这一作用力可能会导致一些熔融的接合金属被挤出，从而在n型衬底和p-n结周围的基座之间形成并联电路，影响了器件的操作。
因此，如图5所示，导电的模片附着材料26会被挤出并与器件中的n型层14和10接触，从而形成使有源区中的p-n结短路的肖特基二极管连接，而这并不是所希望得到的结果。因此，需要改进LED的设计以改善结向下安装。
发明内容
一种LED芯片，包括适合热超声或热压接合的焊垫，例如Sn、AuSn或其它金属。焊垫的物理尺寸被选定为不管有无焊剂，都可以减少或防止在热压或热超声接合的过程中焊料被挤出。在一些实施例中，AuSn焊垫被设计成可接受30g至70g或更大的作用力而不会被挤出。
本发明的特定实施例提供了一种具有焊垫的LED芯片，其中焊垫的总体积小于约3×10-5mm3。本发明的另一些实施例提供了一种具有焊垫的LED芯片，其中焊垫的总体积小于约2.5×10-5mm3。
在本发明的特定实施例中，焊垫可以形成为以下形状：具有基本呈方形或矩形的周边的平行六面体、具有基本呈圆形的周边的圆柱体，或具有彼此相对的平行表面和基本呈星形的周边的多面体。根据LED芯片的形状，其它的周边形状也是可以和需要的。
本发明的方法实施例包括以下步骤：制造LED芯片，该LED芯片具有第一表面、第一表面上的外延台面区和外延区上的金属欧姆触点；在金属欧姆触点上形成焊垫，使焊垫的总体积小于约3×10-5mm3；以及采用热超声或热压接合将LED芯片接合到金属基座上。本发明其它方法实施例包括以下步骤：制造LED芯片，该LED芯片具有第一表面、第一表面上的外延台面区和外延区上的金属欧姆触点；在金属欧姆触点上形成焊垫，使焊垫的总体积小于约2.5×10-5mm3；以及采用热超声或热压接合将LED芯片接合到金属基座上。
附图说明
图1是在接合之前示出的本发明实施例的侧视图。
图2是在接合之后示出的本发明实施例的侧视图。
图3A-3D是本发明实施例的底视图。
图4是传统的LED芯片结构的侧视图。
图5是传统的“倒装芯片”LED芯片结构的侧视图。
具体实施方式
下面将参照示出了本发明实施例的附图对本发明进行详细说明。本发明不应当被视为限于这里所阐述的实施例，提供这些实施例是使本发明的公开详尽而全面，并且能够将本发明的范围完全转达给本领域技术人员。相同的附图标记自始至终都表示同样的元件。此外，图中所示的不同的层和区域是示意性地示出的。本领域技术人员应当理解的是，本发明是针对半导体晶片和切割芯片进行说明的，但这些芯片可被切割成任意尺寸。因此，本发明并不限于附图所示的相对尺寸和间距。此外，图中的某些特征以放大的尺寸示出，以便使附图清晰，便于解释。
应当理解的是，当提到某个元件例如层、区域或衬底位于另一元件“之上”或延伸到“其上”时，是指该元件可以直接位于另一元件之上或直接延伸到其上，或者也可以存在介入元件。相反，当提到某个元件“直接”位于另一元件“之上”，或“直接”延伸到“其上”时，则是指不存在介入元件。还应当理解的是，当提到某个元件与另一个元件“连接”或“结合”时，是指该元件可以直接与另一元件连接或结合，或者也可以存在介入元件。相反，当提到某个元件与另一元件“直接连接”或“直接结合”时，是指不存在介入元件。特别地，例如焊垫之类的金属层可以被描述成形成在欧姆触点“上”。本领域技术人员应当理解的是，可以将介入层，例如阻挡层、粘附层和/或反射层设置在焊垫和欧姆触点之间。
应当理解的是，尽管这里可以采用术语“第一”、“第二”等来描述不同的元件、组件、区域、层和/或部分，但这些元件、组件、区域、层和/或部分不应当受到这些术语的限制。这些术语仅用于将一个元件、组件、区域、层或部分与另一个区域、层或部分区分开。因此，在不脱离本发明的教导的情况下，下面所述的第一元件、组件、区域、层或部分也可以被称作第二元件、组件、区域、层或部分。
此外，这里也可以采用相对的术语，例如“下部”或“底部”以及“上部”或“顶部”来说明如附图所示的一个元件与另一个元件的关系。应当理解的是，相对术语意在包含除附图所示方向之外的装置的不同方向。例如，如果图中所示的装置被翻转，则描述成位于另一元件“下部”的元件则被定位成位于该另一元件的“上部”。因此，根据图中的方向的不同，示例性的术语“下部”包括了“下部”和“上部”两个方向。同样，如果在一个图中的器件被翻转，则描述成位于另一元件“下面”或“之下”的元件将被定位成位于该另一部件“之上”。因此，示例性的术语“下面”或“之下”包括了上和下两个方向。
这里参照作为本发明理想化实施例的示意图的截面图来描述本发明的实施例。同样，例如由于制造技术和/或公差，偏离图示的形状是可以预料到的。因此，本发明的实施例不应当被视为限于这里图示的区域内的特定形状，而是包括例如由制造导致的形状偏差。例如，图示为矩形的蚀刻区域通常具有锥形、圆形或曲线形的特征。因此，图示的区域实质上是示意性的，它们的形状不用于图示器件的区域的精确形状，也不用于限制本发明的范围。
除非另外进行限定，这里采用的所有术语(包括技术术语和科学术语)都与本发明所属技术领域的普通技术人员通常理解的含义相同。进一步应当理解的是，诸如那些在通常使用的字典中定义的术语应当被解释为具有与相关技术领域的上下文中的含义一致的含义，并且不能在理想化或过分形式化的意义上进行解释，除非这里特别明确地这样限定。
本领域技术人员还应当理解，所提到的设置成“邻近于”另一特征的结构或特征可以具有与邻近特征重叠或位于邻近特征之下的部分。
现在说明本发明的实施例，总体上参照碳化硅基衬底上的氮化镓基发光二极管。不过，本领域技术人员应当理解的是，本发明的多个实施例可以采用衬底与外延层的多种不同组合。例如，所述组合可以包括GaP衬底上的AlGalnP二极管；GaAs衬底上的InGaAs二极管；GaAs衬底上的AlGaAs二极管；SiC或蓝宝石(Al2O3)衬底上的SiC二极管；和/或氮化镓、碳化硅、氮化铝、蓝宝石、氧化锌和/或其它衬底上的氮基二极管。
图1示出了具有成一定形状的衬底的LED芯片。特别地，图1所示的LED芯片30具有包括第一表面21和第二表面23的衬底10。由沉积在第一表面21上的外延层形成有源区12。欧姆触点18形成在p型区16上。n型电极22形成在衬底10的第二表面23上。外延区14、16和欧姆触点层18被蚀刻成台面隔离结构25。欧姆触点层18可以包括其它金属层，例如阻挡层、粘附层和/或镜面层。
在一些实施例中，LED芯片的第一表面21的宽度可以大约为300μm或更大。在一些实施例中，台面结构25的宽度可以大约为250μm或更大。
LED芯片30还包括金属垫31，芯片30通过金属垫31可以热超声接合或热压接合到基座24上。垫31优选包括Au或适当的金属合金，例如Au/Sn、Pb/Sn、Sn、Sn/Ag。热超声接合利用热、压力和超声波振动的组合将芯片接合到基座上。
在图3A示出的一个实施例中，焊垫31包括具有基本呈圆形的截面和高度h1约为2μm的圆柱体。焊垫的直径可以小于台面25宽度的一半。在一个实施例中，圆形焊垫的直径为120μm。在该实施例中，焊垫的体积可以小于大约2.3×10-5mm3。在一些实施例中，焊垫里金属的体积可小于大约3×10-5mm3。在另一实施例中，焊垫里金属的体积可小于大约2.5×10-5mm3。因此，图3A所示的圆柱形焊垫可以具有大约200μm的直径，其高度为大约0.95μm或更小。在一些实施例中，图3A所示的圆柱形焊垫可以具有大约200μm的直径，其高度为大约0.8μm或更小。
在图3B所示的另一些实施例中，焊垫31可以包括高度大约为1.2μm、截面基本呈方形的平行六面体。方形焊垫的宽度小于台面25的宽度的约2/3。在一个实施例中，该方形焊垫可具有大约150μm的宽度，由此形成的体积大约为2.7×10-5mm3。如同图3A所示的实施例，在一些实施例中，焊垫里金属的体积可小于约3×10-5mm3，且在另一些实施例中，焊垫里金属的体积可小于约2.5×10-5mm3。
在图3C所示的另一些实施例中，焊垫31包括多面体，该多面体具有彼此相对的平行表面和形状呈四角星状的、定位为使得四个顶点沿着芯片表面的对角线延伸的周边。根据LED芯片的形状，其它的周边形状也是可以和需要的。在这种情况下，从焊垫边缘到台面边缘的距离优选不小于50μm。在一些实施例中，焊垫可为1.5至2.0μm厚。如同图3A和3B所示的实施例，在一些实施例中，焊垫里金属的体积可小于约3×10-5mm3，在另一些实施例中，焊垫里金属的体积可小于约2.5×10-5mm3。
在图3D所示的另一些实施例中，焊垫31包括多面体，该多面体具有彼此相对的平行表面和形状为具有向芯片边缘延伸的基本呈矩形的区域的十字形的周边。在这种情况下，从焊垫的矩形区域的边缘到台面边缘的距离优选大约为20μm。在一些实施例中，焊垫可为0.5μm厚。在这些实施例中，焊垫里金属的体积可小于约3×10-5mm3，在另一些实施例中，焊垫里金属的体积可小于约2.5×10-5mm3。
当芯片被焊接到衬底上时，焊垫部分融化，变形成如图2所示的新尺寸。在一个实施例中，在安装芯片之前形成的焊垫31的高度、宽度和形状被选定为使焊垫31中的材料的总体积小于在通过施加30～70g的作用力进行热超声接合或热压接合之后、欧姆触点层18和基座24之间所形成的体积。例如，在图2所示的实施例中，焊垫31的材料体积小于高度h2乘以台面25的面积(等于w2×w2)。
在热压或热超声接合中，施加到芯片的作用力会影响芯片和基座之间的接合强度。尽管施加较小的作用力可以导致较少的焊料挤出，但较小的作用力也可能导致较低的接合强度。通常，利用芯片和基座之间的接合的横向切变强度(shear strength)来衡量接合强度。在一些应用中，可接受140g的切变强度。大一点的切变强度也是合乎需要的。例如，为了安装横向尺寸为300μm×300μm级的芯片，需要300～600g的切变强度。
在附图和说明书中已经公开了本发明的实施例，尽管采用了专用的术语，但仅在一般的和描述性的意义上来使用这些术语，并不起限定作用。
Claims (26)
1.一种LED芯片(30)，包括：
至少包括p型层和n型层的外延区(14，16)；
形成在所述p型层或n型层中的至少一个上的欧姆触点(18)；
形成在欧姆触点上的金属焊垫(31)；以及
接合在所述焊垫上的基座(24)，
其特征在于，
所述焊垫(31)的高度、宽度和形状限定了所述焊垫内的材料的总体积，该总体积小于所述欧姆触点(18)和所述基座(24)之间所形成的体积，并且其中所述焊垫的总体积小于3×10-5mm3。
2.如权利要求1所述的LED芯片，其中所述焊垫包括Au、Au/Sn、Pb/Sn、Sn或Sn/Ag。
3.如权利要求1所述的LED芯片，其中所述焊垫的总体积小于2.5×10-5mm3。
4.如权利要求1所述的LED芯片，其中所述焊垫被形成的形状为具有呈方形的周边的平行六面体。
5.如权利要求4所述的LED芯片，其中外延区的宽度大于等于250μm，并且其中焊垫的高度小于等于1.2μm、宽度小于等于150μm。
6.如权利要求1所述的LED芯片，其中焊垫被形成的形状为圆柱体。
7.如权利要求6所述的LED芯片，其中外延区的宽度大于等于250μm，并且其中焊垫的高度小于等于2μm、直径小于外延区宽度的一半。
8.如权利要求7所述的LED芯片，其中焊垫的直径小于等于120μm。
9.如权利要求1所述的LED芯片，其中焊垫被形成的形状为具有相对的平行表面和星形的周边的多面体。
10.如权利要求9所述的LED芯片，其中从焊垫的边缘到外延区的边缘的距离至少为50μm。
11.一种组装有权利要求1所述的芯片的LED，其特征在于：
所述LED芯片和所述基座之间的接合的切变强度超过140g。
12.如权利要求11所述的LED，其中外延区包括周界，并且所述焊垫包括完全位于该外延区的周界内的金属焊料。
13.如权利要求11所述的LED，其中焊垫的总体积小于欧姆触点和基座之间的空间体积。
14.如权利要求11所述的LED，其中LED芯片和基座之间的接合的切变强度超过300g。
15.一种制造LED的方法，包括：
将LED芯片(30)接合到基座(24)上；
其中所述LED芯片具有：至少包括p型层和n型层的外延区(14，16)；形成在所述p型层或n型层中的至少一个上的欧姆触点(18)，以及形成在欧姆触点上的焊垫(31)，
其特征在于，
利用热压或热超声接合来执行接合步骤；
焊垫(31)是金属，并且
焊垫(31)的总体积小于3×10-5mm3。
16.如权利要求15所述的方法，其中将LED芯片接合到基座上的步骤包括向LED芯片施加30至70g的作用力。
17.如权利要求16所述的方法，包括施加为50g的作用力。
18.如权利要求15所述的方法，其中所述LED芯片包括衬底，并且欧姆触点形成在外延区的与衬底相对的表面上。
19.如权利要求15所述的方法，其中焊垫的总体积小于2.5×10-5mm3。
20.如权利要求15所述的方法，其中焊垫被形成的形状为具有呈方形的周边的平行六面体。
21.如权利要求20所述的方法，其中外延区的宽度大于等于250μm，并且其中焊垫的高度小于等于1.2μm、宽度小于等于150μm。
22.如权利要求15所述的方法，其中焊垫被形成的形状为具有呈圆形的周边的圆柱体。
23.如权利要求22所述的方法，其中外延区的宽度大于等于250μm，并且其中焊垫的高度小于等于2μm、直径小于外延区宽度的一半。
24.如权利要求23所述的方法，其中焊垫的直径小于等于120μm。
25.如权利要求15所述的方法，其中焊垫被形成的形状为具有相对的平行表面和星形或十字形的周边的多面体。
26.如权利要求25所述的方法，其中从焊垫的边缘到外延区的边缘的距离至少为20μm。
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Families Citing this family (91)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD582064S1 (en) * | 2004-12-07 | 2008-12-02 | Matsushita Electric Industrial Co., Ltd. | Lighting fixture with light emitting diode |
| WO2007081719A2 (en) | 2006-01-05 | 2007-07-19 | Illumitex, Inc. | Separate optical device for directing light from an led |
| SG135074A1 (en) | 2006-02-28 | 2007-09-28 | Micron Technology Inc | Microelectronic devices, stacked microelectronic devices, and methods for manufacturing such devices |
| US20070241339A1 (en) * | 2006-04-12 | 2007-10-18 | Jui-Kang Yen | Light-emitting diode with low thermal resistance |
| US7573074B2 (en) | 2006-05-19 | 2009-08-11 | Bridgelux, Inc. | LED electrode |
| US7737455B2 (en) | 2006-05-19 | 2010-06-15 | Bridgelux, Inc. | Electrode structures for LEDs with increased active area |
| TWI305960B (en) * | 2006-06-16 | 2009-02-01 | Opto Tech Corp | Light emitting diode and method manufacturing the same |
| TWI318013B (en) | 2006-09-05 | 2009-12-01 | Epistar Corp | A light emitting device and the manufacture method thereof |
| JP4211828B2 (ja) * | 2006-09-12 | 2009-01-21 | 株式会社日立製作所 | 実装構造体 |
| KR20090064474A (ko) | 2006-10-02 | 2009-06-18 | 일루미텍스, 인크. | Ｌｅｄ 시스템 및 방법 |
| JP2011512037A (ja) | 2008-02-08 | 2011-04-14 | イルミテックス， インコーポレイテッド | エミッタ層成形のためのシステムおよび方法 |
| JP2010526425A (ja) * | 2008-05-20 | 2010-07-29 | パナソニック株式会社 | 半導体発光装置、並びに、これを用いた光源装置及び照明システム |
| TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
| US8202741B2 (en) * | 2009-03-04 | 2012-06-19 | Koninklijke Philips Electronics N.V. | Method of bonding a semiconductor device using a compliant bonding structure |
| TWI407596B (zh) * | 2009-03-06 | 2013-09-01 | Advanced Optoelectronic Tech | 側邊散熱型發光二極體及其製程 |
| US8096671B1 (en) | 2009-04-06 | 2012-01-17 | Nmera, Llc | Light emitting diode illumination system |
| US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
| US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
| US8240545B1 (en) | 2011-08-11 | 2012-08-14 | Western Digital (Fremont), Llc | Methods for minimizing component shift during soldering |
| US8794501B2 (en) | 2011-11-18 | 2014-08-05 | LuxVue Technology Corporation | Method of transferring a light emitting diode |
| US9620478B2 (en) | 2011-11-18 | 2017-04-11 | Apple Inc. | Method of fabricating a micro device transfer head |
| US8518204B2 (en) * | 2011-11-18 | 2013-08-27 | LuxVue Technology Corporation | Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer |
| US8349116B1 (en) | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
| US8573469B2 (en) | 2011-11-18 | 2013-11-05 | LuxVue Technology Corporation | Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer |
| US9773750B2 (en) | 2012-02-09 | 2017-09-26 | Apple Inc. | Method of transferring and bonding an array of micro devices |
| US9548332B2 (en) | 2012-04-27 | 2017-01-17 | Apple Inc. | Method of forming a micro LED device with self-aligned metallization stack |
| US9105492B2 (en) | 2012-05-08 | 2015-08-11 | LuxVue Technology Corporation | Compliant micro device transfer head |
| US9034754B2 (en) | 2012-05-25 | 2015-05-19 | LuxVue Technology Corporation | Method of forming a micro device transfer head with silicon electrode |
| US8415771B1 (en) | 2012-05-25 | 2013-04-09 | LuxVue Technology Corporation | Micro device transfer head with silicon electrode |
| JP2014013855A (ja) * | 2012-07-05 | 2014-01-23 | Mitsubishi Electric Corp | 半導体発光装置の製造方法および半導体発光装置 |
| US8415767B1 (en) | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant bipolar micro device transfer head with silicon electrodes |
| US8415768B1 (en) | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant monopolar micro device transfer head with silicon electrode |
| US8569115B1 (en) | 2012-07-06 | 2013-10-29 | LuxVue Technology Corporation | Method of forming a compliant bipolar micro device transfer head with silicon electrodes |
| US8791530B2 (en) | 2012-09-06 | 2014-07-29 | LuxVue Technology Corporation | Compliant micro device transfer head with integrated electrode leads |
| US9162880B2 (en) | 2012-09-07 | 2015-10-20 | LuxVue Technology Corporation | Mass transfer tool |
| US8941215B2 (en) | 2012-09-24 | 2015-01-27 | LuxVue Technology Corporation | Micro device stabilization post |
| US8835940B2 (en) | 2012-09-24 | 2014-09-16 | LuxVue Technology Corporation | Micro device stabilization post |
| US9558721B2 (en) | 2012-10-15 | 2017-01-31 | Apple Inc. | Content-based adaptive refresh schemes for low-power displays |
| US9236815B2 (en) | 2012-12-10 | 2016-01-12 | LuxVue Technology Corporation | Compliant micro device transfer head array with metal electrodes |
| US9159700B2 (en) | 2012-12-10 | 2015-10-13 | LuxVue Technology Corporation | Active matrix emissive micro LED display |
| US9255001B2 (en) | 2012-12-10 | 2016-02-09 | LuxVue Technology Corporation | Micro device transfer head array with metal electrodes |
| US9029880B2 (en) | 2012-12-10 | 2015-05-12 | LuxVue Technology Corporation | Active matrix display panel with ground tie lines |
| US9178123B2 (en) | 2012-12-10 | 2015-11-03 | LuxVue Technology Corporation | Light emitting device reflective bank structure |
| US9105714B2 (en) | 2012-12-11 | 2015-08-11 | LuxVue Technology Corporation | Stabilization structure including sacrificial release layer and staging bollards |
| US9166114B2 (en) | 2012-12-11 | 2015-10-20 | LuxVue Technology Corporation | Stabilization structure including sacrificial release layer and staging cavity |
| US9391042B2 (en) | 2012-12-14 | 2016-07-12 | Apple Inc. | Micro device transfer system with pivot mount |
| US9314930B2 (en) | 2012-12-14 | 2016-04-19 | LuxVue Technology Corporation | Micro pick up array with integrated pivot mount |
| US9153171B2 (en) | 2012-12-17 | 2015-10-06 | LuxVue Technology Corporation | Smart pixel lighting and display microcontroller |
| US9095980B2 (en) | 2013-02-25 | 2015-08-04 | LuxVue Technology Corporation | Micro pick up array mount with integrated displacement sensor |
| US9308649B2 (en) | 2013-02-25 | 2016-04-12 | LuxVue Techonology Corporation | Mass transfer tool manipulator assembly |
| US9252375B2 (en) | 2013-03-15 | 2016-02-02 | LuxVue Technology Corporation | Method of fabricating a light emitting diode display with integrated defect detection test |
| US8791474B1 (en) | 2013-03-15 | 2014-07-29 | LuxVue Technology Corporation | Light emitting diode display with redundancy scheme |
| US9484504B2 (en) | 2013-05-14 | 2016-11-01 | Apple Inc. | Micro LED with wavelength conversion layer |
| US9217541B2 (en) | 2013-05-14 | 2015-12-22 | LuxVue Technology Corporation | Stabilization structure including shear release posts |
| US9136161B2 (en) | 2013-06-04 | 2015-09-15 | LuxVue Technology Corporation | Micro pick up array with compliant contact |
| KR102049635B1 (ko) | 2013-06-12 | 2019-11-28 | 로히니, 엘엘씨. | 피착된 광-생성 소스에 의한 키보드 백라이팅 |
| US8987765B2 (en) | 2013-06-17 | 2015-03-24 | LuxVue Technology Corporation | Reflective bank structure and method for integrating a light emitting device |
| US8928021B1 (en) | 2013-06-18 | 2015-01-06 | LuxVue Technology Corporation | LED light pipe |
| US9111464B2 (en) | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
| US9035279B2 (en) | 2013-07-08 | 2015-05-19 | LuxVue Technology Corporation | Micro device with stabilization post |
| US9296111B2 (en) | 2013-07-22 | 2016-03-29 | LuxVue Technology Corporation | Micro pick up array alignment encoder |
| US9087764B2 (en) | 2013-07-26 | 2015-07-21 | LuxVue Technology Corporation | Adhesive wafer bonding with controlled thickness variation |
| US9070387B1 (en) | 2013-08-23 | 2015-06-30 | Western Digital Technologies, Inc. | Integrated heat-assisted magnetic recording head/laser assembly |
| US9153548B2 (en) | 2013-09-16 | 2015-10-06 | Lux Vue Technology Corporation | Adhesive wafer bonding with sacrificial spacers for controlled thickness variation |
| US9367094B2 (en) | 2013-12-17 | 2016-06-14 | Apple Inc. | Display module and system applications |
| US9768345B2 (en) | 2013-12-20 | 2017-09-19 | Apple Inc. | LED with current injection confinement trench |
| US9450147B2 (en) | 2013-12-27 | 2016-09-20 | Apple Inc. | LED with internally confined current injection area |
| US9583466B2 (en) | 2013-12-27 | 2017-02-28 | Apple Inc. | Etch removal of current distribution layer for LED current confinement |
| US9542638B2 (en) | 2014-02-18 | 2017-01-10 | Apple Inc. | RFID tag and micro chip integration design |
| US9583533B2 (en) | 2014-03-13 | 2017-02-28 | Apple Inc. | LED device with embedded nanowire LEDs |
| TWI550909B (zh) | 2014-03-21 | 2016-09-21 | A flip chip type light emitting diode and a method for manufacturing the same, and a flip chip type structure thereof | |
| US9522468B2 (en) | 2014-05-08 | 2016-12-20 | Apple Inc. | Mass transfer tool manipulator assembly with remote center of compliance |
| US9318475B2 (en) | 2014-05-15 | 2016-04-19 | LuxVue Technology Corporation | Flexible display and method of formation with sacrificial release layer |
| US9741286B2 (en) | 2014-06-03 | 2017-08-22 | Apple Inc. | Interactive display panel with emitting and sensing diodes |
| US9624100B2 (en) | 2014-06-12 | 2017-04-18 | Apple Inc. | Micro pick up array pivot mount with integrated strain sensing elements |
| US9570002B2 (en) | 2014-06-17 | 2017-02-14 | Apple Inc. | Interactive display panel with IR diodes |
| US9425151B2 (en) | 2014-06-17 | 2016-08-23 | Apple Inc. | Compliant electrostatic transfer head with spring support layer |
| CN104104009B (zh) * | 2014-07-08 | 2017-12-01 | 北京工业大学 | 一种p型金属电极制备焊料的半导体激光器 |
| US9828244B2 (en) | 2014-09-30 | 2017-11-28 | Apple Inc. | Compliant electrostatic transfer head with defined cavity |
| US9042048B1 (en) | 2014-09-30 | 2015-05-26 | Western Digital (Fremont), Llc | Laser-ignited reactive HAMR bonding |
| US9705432B2 (en) | 2014-09-30 | 2017-07-11 | Apple Inc. | Micro pick up array pivot mount design for strain amplification |
| US9902023B1 (en) | 2014-10-28 | 2018-02-27 | Western Digital (Fremont), Llc | Systems and devices for achieving high throughput attachment and sub-micron alignment of components |
| US9257138B1 (en) | 2014-10-28 | 2016-02-09 | Western Digital (Fremont), Llc | Slider assembly and method of manufacturing same |
| US9478583B2 (en) | 2014-12-08 | 2016-10-25 | Apple Inc. | Wearable display having an array of LEDs on a conformable silicon substrate |
| CN108770368B (zh) | 2016-01-15 | 2022-04-12 | 罗茵尼公司 | 透过设备上的罩盖进行背光照明的设备和方法 |
| KR101962472B1 (ko) | 2018-06-18 | 2019-03-26 | 주식회사 삼화테크 | 공정챔버의 연결구조 |
| JP7168280B2 (ja) * | 2018-06-26 | 2022-11-09 | 住友電工デバイス・イノベーション株式会社 | 半導体装置、および、半導体チップの搭載方法 |
| JP7166818B2 (ja) * | 2018-07-13 | 2022-11-08 | スタンレー電気株式会社 | 光半導体素子 |
| KR102705350B1 (ko) | 2019-10-15 | 2024-09-12 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
| CN111128940A (zh) * | 2019-12-31 | 2020-05-08 | 苏州长光华芯光电技术有限公司 | 封装结构、半导体器件及封装方法 |
| US11682659B2 (en) | 2020-02-21 | 2023-06-20 | Samsung Display Co., Ltd. | Display device and fabricating method for display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6169294B1 (en) * | 1998-09-08 | 2001-01-02 | Epistar Co. | Inverted light emitting diode |
| US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58207682A (ja) | 1982-05-28 | 1983-12-03 | Hitachi Ltd | 発光素子の電極構造 |
| JP3708319B2 (ja) * | 1998-02-03 | 2005-10-19 | 松下電器産業株式会社 | 半導体発光装置 |
| US6812502B1 (en) | 1999-11-04 | 2004-11-02 | Uni Light Technology Incorporation | Flip-chip light-emitting device |
| US20020068373A1 (en) | 2000-02-16 | 2002-06-06 | Nova Crystals, Inc. | Method for fabricating light emitting diodes |
| US6483196B1 (en) | 2000-04-03 | 2002-11-19 | General Electric Company | Flip chip led apparatus |
| AT413062B (de) | 2000-07-12 | 2005-10-15 | Tridonic Optoelectronics Gmbh | Verfahren zur herstellung einer led-lichtquelle |
| JP2002280415A (ja) | 2001-03-16 | 2002-09-27 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| TW492202B (en) | 2001-06-05 | 2002-06-21 | South Epitaxy Corp | Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge |
| US6787435B2 (en) | 2001-07-05 | 2004-09-07 | Gelcore Llc | GaN LED with solderable backside metal |
| US6888167B2 (en) | 2001-07-23 | 2005-05-03 | Cree, Inc. | Flip-chip bonding of light emitting devices and light emitting devices suitable for flip-chip bonding |
| US6747298B2 (en) | 2001-07-23 | 2004-06-08 | Cree, Inc. | Collets for bonding of light emitting diodes having shaped substrates |
| US20030057421A1 (en) | 2001-09-27 | 2003-03-27 | Tzer-Perng Chen | High flux light emitting diode having flip-chip type light emitting diode chip with a transparent substrate |
| TW535307B (en) | 2002-03-04 | 2003-06-01 | United Epitaxy Co Ltd | Package of light emitting diode with protective diode |
| DE10214210B4 (de) | 2002-03-28 | 2011-02-10 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip zur Flip-Chip-Montage auf einen lotbedeckten Träger und Verfahren zu dessen Herstellung |
| TW554553B (en) | 2002-08-09 | 2003-09-21 | United Epitaxy Co Ltd | Sub-mount for high power light emitting diode |
| US6958498B2 (en) | 2002-09-27 | 2005-10-25 | Emcore Corporation | Optimized contact design for flip-chip LED |
| US6895677B2 (en) | 2002-12-16 | 2005-05-24 | First Down Laser Systems, Llc | System for operating one or more lasers to project a visible line onto a surface |
| US6846497B2 (en) * | 2003-01-30 | 2005-01-25 | National Starch And Chemical Investment Holding Corporation | Rapidly expanding starches with altered crystalline structure |
| US20040173808A1 (en) | 2003-03-07 | 2004-09-09 | Bor-Jen Wu | Flip-chip like light emitting device package |
| US7141828B2 (en) | 2003-03-19 | 2006-11-28 | Gelcore, Llc | Flip-chip light emitting diode with a thermally stable multiple layer reflective p-type contact |
| US7358539B2 (en) | 2003-04-09 | 2008-04-15 | Lumination Llc | Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts |
| US20040211972A1 (en) | 2003-04-22 | 2004-10-28 | Gelcore, Llc | Flip-chip light emitting diode |
| KR100568269B1 (ko) | 2003-06-23 | 2006-04-05 | 삼성전기주식회사 | 플립-칩 본딩용 질화갈륨계 발광 다이오드 및 그 제조방법 |
| TWI312582B (en) | 2003-07-24 | 2009-07-21 | Epistar Corporatio | Led device, flip-chip led package and light reflecting structure |
| DE102004036295A1 (de) | 2003-07-29 | 2005-03-03 | GELcore, LLC (n.d.Ges.d. Staates Delaware), Valley View | Flip-Chip-Leuchtdioden-Bauelemente mit Substraten, deren Dicke verringert wurde oder die entfernt wurden |
| US7119372B2 (en) | 2003-10-24 | 2006-10-10 | Gelcore, Llc | Flip-chip light emitting diode |
| KR100624416B1 (ko) | 2003-12-23 | 2006-09-18 | 삼성전자주식회사 | 플립칩형 질화물계 발광소자 및 그 제조방법 |
| US7179670B2 (en) | 2004-03-05 | 2007-02-20 | Gelcore, Llc | Flip-chip light emitting diode device without sub-mount |
| US6897489B1 (en) | 2004-03-10 | 2005-05-24 | Hui Peng | (AlGa)InPN high brightness white or desired color LED's |
| TWI260795B (en) | 2004-03-22 | 2006-08-21 | South Epitaxy Corp | Flip chip type- light emitting diode package |
-
2005
- 2005-04-26 US US11/114,639 patent/US7462861B2/en active Active
- 2005-04-27 CA CA002564309A patent/CA2564309A1/en not_active Abandoned
- 2005-04-27 JP JP2007510944A patent/JP2007535823A/ja active Pending
- 2005-04-27 KR KR1020067024874A patent/KR101130151B1/ko active Active
- 2005-04-27 CN CN200580013439.7A patent/CN100530709C/zh active Active
- 2005-04-27 WO PCT/US2005/014493 patent/WO2005106497A2/en active Application Filing
- 2005-04-27 EP EP05740313A patent/EP1741146A2/en not_active Ceased
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2008
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-
2009
- 2009-11-09 US US12/614,700 patent/US8076670B2/en active Active
-
2012
- 2012-08-31 JP JP2012191477A patent/JP2013033969A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6169294B1 (en) * | 1998-09-08 | 2001-01-02 | Epistar Co. | Inverted light emitting diode |
| US6486499B1 (en) * | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
Also Published As
| Publication number | Publication date |
|---|---|
| US7462861B2 (en) | 2008-12-09 |
| KR20070013315A (ko) | 2007-01-30 |
| US20050253154A1 (en) | 2005-11-17 |
| JP2007535823A (ja) | 2007-12-06 |
| CA2564309A1 (en) | 2005-11-10 |
| KR101130151B1 (ko) | 2012-03-28 |
| CN101208807A (zh) | 2008-06-25 |
| WO2005106497A3 (en) | 2006-06-22 |
| US7642121B2 (en) | 2010-01-05 |
| JP2013033969A (ja) | 2013-02-14 |
| EP1741146A2 (en) | 2007-01-10 |
| US20090068774A1 (en) | 2009-03-12 |
| WO2005106497A2 (en) | 2005-11-10 |
| US8076670B2 (en) | 2011-12-13 |
| US20100052004A1 (en) | 2010-03-04 |
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