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CN100517738C - 影像感测芯片的封装结构 - Google Patents

影像感测芯片的封装结构 Download PDF

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CN100517738C
CN100517738C CNB2005100360347A CN200510036034A CN100517738C CN 100517738 C CN100517738 C CN 100517738C CN B2005100360347 A CNB2005100360347 A CN B2005100360347A CN 200510036034 A CN200510036034 A CN 200510036034A CN 100517738 C CN100517738 C CN 100517738C
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image sensing
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sensing chip
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matrix
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CN1897288A (zh
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魏史文
吴英政
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Changchun Changguang Shiyuan Investment Co ltd
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Yangxin Technology Co ltd
Hongfujin Precision Industry Shenzhen Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/3201—Structure
    • H01L2224/32012—Structure relative to the bonding area, e.g. bond pad
    • H01L2224/32014—Structure relative to the bonding area, e.g. bond pad the layer connector being smaller than the bonding area, e.g. bond pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

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Abstract

一种影像感测芯片的封装结构，包括一载具、一影像感测芯片、若干引线和一透光板。该载具包括导线架和基体，该导线架包括若干导电片，该基体包括若干侧壁和一底部，该若干侧壁与底部围成一容置腔，该底部形成有若干相互平行间隔的开口，每一导电片分别容置于一开口中，且该导电片的一端从该开口露出；该影像感测芯片包括若干芯片焊垫和一感测区；每一引线的一端连至一导电片，另一端连至影像感测芯片的一芯片焊垫；该透光板设置于基体上；影像感测芯片的感测区周缘涂布有黏胶，该黏胶黏附于透光板上，该黏胶与透光板围成一空腔，感测区位于该空腔内，该影像感测芯片、引线和黏胶均位于容置腔内。

Description

影像感测芯片的封装结构
【技术领域】
本发明是关于一种数码相机用影像感测芯片，尤其是关于一种影像感测芯片的封装结构。
【背景技术】
目前，数码相机和带数码相机的移动电话越来越普及，数码相机不可缺少的核心组件影像感测芯片的需求亦随的与日俱增。同时，消费者亦希望数码相机更加朝小型化、高品质、低价格方向发展，如是，对影像感测芯片封装的制造提出了更高要求。
请参阅图1，一种现有影像感测芯片封装，该影像传感器封装包括若干导电回路130、一基板146、一框架148、一影像传感器芯片152和一透光板158。该导电回路130的截面为ㄈ状，其包括相互电连接的一第一导电部分140、一第二导电部分142和一第三导电部分144。该若干导电回路130间隔设于基板146的边缘，导电回路130的第一、二、三导电部分140、142、144分别从基板146的上表面、下表面和侧面露出。框架148设置于基板146上，且与基板146共同形成一容置空间150。所述影像传感器芯片152包括若干焊垫154，且其设置于该容置空间150内，其为通过黏胶160固定于基板146上，其焊垫154通过若干引线156电连接至导电回路130的第一板140上。透光板158通过粘胶162固定于框架148顶部。
由于上述影像感测芯片152和若干引线156皆容置于基板146与框架148形成的容置空间150内，且为方便打线器操作，故使得容置空间150较大，由此，封装后的容置空间150存在较多粉尘，且于封装过程和影像感测芯片封装安装于镜头和镜头调焦过程中不可避免的震动均会使容置空间150周壁上的粉尘等杂质掉落于影像感测芯片152上，污染影像感测芯片152的感测区，导致品质不良；另，该引线156裸露，易受容置空间150内的粉尘等杂质损害，未得到足够保护；且该导电回路130的第二导电部分142和第三导电部分144均露出外界，因此，外界的湿气等易损和导电回路130，从而影响到该影像感测芯片封装的可靠度。
【发明内容】
鉴于以上内容，提供一种较少被污染、品质较好的影像感测芯片的封装结构实为必要。
一种影像感测芯片的封装结构，包括一载具、一影像感测芯片、若干引线和一透光板。该载具包括一导线架和一基体，该导线架包括若干导电片，该基体包括若干侧壁和一底部，该若干侧壁与底部围成一容置腔，该底部形成有若干相互间隔的开口，每一导电片分别容置于一开口中，且该导电片的一端从该开口露出；该影像感测芯片包括若干芯片焊垫和一感测区；每一引线的一端连接至一导电片，另一端连接至影像感测芯片的一芯片焊垫；该透光板设置于基体上，将容置腔密封；影像感测芯片的感测区周缘涂布有黏胶，该黏胶同时黏附于透光板上，将影像感测芯片的感测区包覆于该黏胶与透光板围成的空腔内，该影像感测芯片、若干引线和黏胶均位于该容置腔内。
相较现有技术，所述影像感测芯片的封装结构的感测区包覆于黏胶形成的较小空腔内，故其极难被污染，从而使该影像感测芯片保持良好品质；该该影像感测芯片的引线被黏胶包覆，得到了良好保护；导线架除其对外界的电性连接处外，其余部分皆被基体包覆其中，可降低湿气等的影响进而提高产品可靠度。
【附图说明】
图1是现有影像感测芯片的封装结构示意图；
图2是本发明较佳实施方式的结构示意图；
图3是本发明较佳实施方式的仰视图。
【具体实施例】
请参阅图2，本发明较佳实施方式影像感测芯片的封装结构包括一影像感测芯片22、一载具(图未标)、若干引线26和一透光板28。该载具包括一导线架20和一基体24，该导线架20与基体24通过嵌入成型法(insert-molding)一体成型而成载具。
该基体24为长方体形，其由塑料材料制成，其包括四侧壁240和一底部243，该四侧壁240与底部243共同围成一容置腔30。该侧壁240包括一上部241和一下部242，若干凹槽(图未标)相互平行间隔地形成于该下部242的与上部241连接处，二相对侧壁240的下部242邻近容置腔30的一侧设有一斜面244。该底部243上开设有若干相互平行间隔的开口245，开口245与凹槽对应。
该导线架20包括若干个导电片，该导电片可为金属片。每一导电片包括一第一板202、一第二板204和一第三板206，该第一板202与第二板20相互平行且间隔错开一定距离，该第三板206相对第一板202和第二板204倾斜一定角度，且连接该第一板202和第二板204。请参阅图3，该导线架20的导电片分成两组，该两组导电片对称分布而设置于基体24的两相对侧壁240上，每一组内的导电片相互间隔平行排列。所述导电片的第一板202嵌卡于基体24的一凹槽内，第二板204插于基体24的一开口245处，该第三板206倚靠设于基体24下部242的斜面244上。第二板204与一印刷电路板相连，从而将导线架20电连接至印刷电路板上，用以将电讯号传递至外部。
该影像感测芯片22的顶面中央设有一感测区222，该感测区222周缘布设有若干芯片焊垫224。该影像感测芯片22设置于基体24的容置腔30内，其为通过黏胶(图未标)固定于基体24的底部243上。
每一引线26的一端连接至影像感测芯片22的一芯片焊垫224，另一端连接至导线架20的一导电片的第一板202。该引线26由黄金等导电性较好的金属材料制成，其用于将影像感测芯片22的讯号传输至导线架20。
透光板28为一透光玻璃，其通过黏胶(图未标)固定设置于基体24上，将容置腔30封闭，从而将影像感测芯片22包覆住，使影像感测芯片22透过透光板28接受光讯号，而防止灰尘等杂质落到影像感测芯片22上而污染其感测区222。
影像感测芯片22的感测区222周缘涂布有一整圈延伸至导线架20和基体24的黏胶34，该黏胶34将所有引线26包覆且覆盖导电架20的第三板206和基体24的斜面244侧壁，仅露出基体24的感测区222。该黏胶34还黏附于透光板28上，从而形成一较小的封闭空腔32，使影像感测芯片22的感测区222位于该空腔32内，如此，由于感测区222位于较小的空腔32内，使得感测区222得到极好的保护，很难被污染。所述若干引线26和该黏胶34均位于基体24的容置腔30内。
可以理解，该导线架20的导电片可为分为任意组，只需将其嵌卡于基体24即可；该导线架20的第三板206可不倾斜，而垂直于第一板202和第二板204；导线架20的各导电片可不相互平行，只需其相互不接触即可。

Claims (9)

1.一种影像感测芯片的封装结构，其包括一载具、一影像感测芯片、若干引线和一透光板，该影像感测芯片包括若干芯片焊垫和一感测区，其特征在于：该载具包括一导线架和一基体，该导线架包括若干导电片，该基体包括若干侧壁和一底部，该若干侧壁和底部共同围成一容置腔，该底部形成有若干相互平行间隔的开口，每一导电片分别容置于一开口中，且该导电片的一端从该开口露出；每一引线的一端连接至一导电片，另一端连接至影像感测芯片的一芯片焊垫；该透光板设置于基体上，从而将所述容置腔封闭；该影像感测芯片和所有引线均位于该容置腔内，影像感测芯片的感测区周缘涂布有黏胶，该黏胶同时黏附于透光板上，将影像感测芯片的感测区包覆于该黏胶与透光板围成的空腔内。
2.如权利要求第1所述的影像感测芯片的封装结构，其特征在于：该导线架与基体通过嵌入成型法一体成型。
3.如权利要求第1所述的影像感测芯片的封装结构，其特征在于：该导电片包括一第一板、一第二板和一第三板，该第一板与第二板相互平行且间隔一定错开距离，该第三板相对第一板和第二板倾斜一定角度，其连接该第一板和第二板。
4.如权利要求第1所述的影像感测芯片的封装结构，其特征在于：该基体由塑料材料制成。
5.如权利要求第3所述的影像感测芯片的封装结构，其特征在于：该基体为长方体形，所述侧壁包括一下部和一上部，若干凹槽相互间隔开设于下部与上部连接处，该下部邻近容置腔的一侧设有一斜面，所述底部开设的开口与凹槽相对应，导电片的第一板嵌卡于基体的所述凹槽处，第二板设于基体的所述开口处，第三板倚靠设于该斜面。
6.如权利要求第1所述的影像感测芯片的封装结构，其特征在于：该影像感测芯片的感测区位于影像感测芯片的顶部中央，所述芯片焊垫分布于该感测区的周缘。
7.如权利要求第6所述的影像感测芯片的封装结构，其特征在于：该导线架的导电片分成两组，该两组导电片相互平行、对称设置于影像感测芯片两侧，每一组内的导电片相互平行间隔排列。
8.如权利要求第1所述的影像感测芯片的封装结构，其特征在于：该透光板为透光玻璃，其进一步通过黏胶固定至基体上。
9.如权利要求第5所述的影像感测芯片的封装结构，其特征在于：该黏胶包覆所有引线，且覆盖导线架的第三板和基体的斜面上。
CNB2005100360347A 2005-07-15 2005-07-15 影像感测芯片的封装结构 Active CN100517738C (zh)

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US11/448,570 US7554184B2 (en) 2005-07-15 2006-06-07 Image sensor chip package

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CN100483726C (zh) * 2006-07-28 2009-04-29 鸿富锦精密工业（深圳）有限公司 影像感测器封装及其应用的数码相机模组
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