CN100502066C - Light-emitting semiconductor device with light-emitting conversion element - Google Patents
Light-emitting semiconductor device with light-emitting conversion element Download PDFInfo
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- CN100502066C CN100502066C CNB2006101016572A CN200610101657A CN100502066C CN 100502066 C CN100502066 C CN 100502066C CN B2006101016572 A CNB2006101016572 A CN B2006101016572A CN 200610101657 A CN200610101657 A CN 200610101657A CN 100502066 C CN100502066 C CN 100502066C
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- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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Abstract
Light-emitting semiconductor component with a radiation-emitting semiconductor body (1) and a luminescence conversion element (4, 5). The semiconductor body (1) emits radiation in the ultraviolet, blue and/or green region of the spectrum, and the luminescence conversion element (4, 5) converts a part of this radiation into radiation of a greater wavelength. This enables light-emitting diodes which emit mixed-colour, in particular white, light by means of a single light-emitting semiconductor body to be produced. The specially preferred luminescence conversion dye is YAG:Ce.
Description
The application is to be denomination of invention the dividing an application for the Chinese patent application 200310118179.2 of " luminous semiconductor device with luminous inverting element " on June 26th, 1997 applying date of applicant Osram-Puto Semiconductor Co., Ltd..
Technical field
The present invention relates to the luminous semiconductor device of emitted radiation.
Background technology
Such semiconductor device is for example had gained some understanding from the DE 38 04 293 of open file.Introduced the structure of a kind of electric exciting light-emitting diode or laser diode in the literary composition.In this structure, whole emission spectrum of diode emission are passed to the bigger direction of wavelength by a plastic components that is mixed with fluorescigenic change light organic dyestuff.By this measure, make this structure launch the light that another kind is different from the color of light-emitting diode emission.By in plastics, mixing different types of dyestuff, use the light emitting diode construction that just can make the light of emission different colours with a kind of light-emitting diode.
In DE-OS 2 347 289, delivered a kind of infrared (IR) solid state lamp, wherein, on the edge of an IR diode, be coated with fluorescer, thereby made the IR ray of this place emission be transformed into visible light.Adopt the purpose of this measure to be,, in the IR transmitted intensity that reduces the diode emission as small as possible, convert wherein as far as possible little a part of ray to visible light for the purpose of controlling.
In addition, in EP 486 052, delivered a kind of light-emitting diode, wherein, between substrate and one deck active electroluminescent layer, layer of semiconductor optical excitation photosphere is set at least, to be transformed into the light of second wavelength period towards the light of first wavelength period of substrate emission from this active layer, thereby make this light-emitting diode launch the light of various different wave length sections altogether.
In the many rising range of application of light-emitting diode, the display element on the Kfz panel board for example, the interior lighting of aircraft and automobile, and in the light emitting diode indicator that can launch panchromatic light, all strict requirement is proposed light-emitting diode, make it can produce mixed light, particularly white light.
Introduced a kind of planar light source of launching white light in JP-07 176 794-A, the front end of a transparent panel therein is provided with the light-emitting diode of two emission blue lights, to the internal emission light of transparent panel.Scribble the coating of luminescent substance in opposite directions on the surface in two first type surfaces being provided with of opposite two of transparent panels, just can be luminous after it is subjected to diode blue-light excited.The wavelength of the blue light that luminescent substance wavelength of light emitted and diode are launched is different.Adopt the element of this known structure but to be difficult to adopt this mode to be coated with energy so that the fluorescent material of light emitted equal white light.In addition, the reproducibility in production in enormous quantities has become big problem, because as long as the thickness of fluorescence coating is slightly uneven, for example for the rough reason of transparent panel, will cause radiative white color to change.
Summary of the invention
According to basic task of the present invention be: provide a kind of according to the beginning described mode semiconductor device, can evenly launch secondary colour, can adopt the simple process method to produce in enormous quantities, can guarantee the reproducibility feature of device again to the full extent.
Just can finish this task according to the semiconductor device described in first aspect of the present invention.Described according to other aspects of the present invention is favourable structure.Provided the purposes of preferentially selecting for use according to semiconductor device of the present invention of the present invention aspect other.
The emitting semiconductor main body that has according to regulation of the present invention is a kind of sandwich construction, particularly by a kind of Ga that uses
xIn
1-xN or Ga
xAl
1-xThe active semi-conductor sandwich construction that N makes when semiconductor device is worked, is launched a kind of electromagnetic radiation of first wavelength period that is made of ultraviolet, indigo plant and/or green glow spectral coverage.Luminous inverting element will be transformed to a kind of ray of second wavelength period according to following manner from a part of ray of first wavelength period, just by semiconductor device emission hybrid ray, the mixed-color light that particularly is made of the ray of the ray of first wavelength period and second wavelength period.In other words, for example luminous inverting element is that a spectrum segment of only preferentially choosing from the ray of semiconductor body emission in first wavelength period is selected to absorb, and launches at the long wave band (in second wavelength period) of wavelength then.Preferential what select is that wavelength in the semiconductor body emission is a relative maximum of intensity in λ≤520nm ray, and the wavelength period in the spectrum of being selected to absorb by luminous inverting element then is to be in beyond this maximum of intensity.
Employing according to another advantage of the present invention is, some (one or more) can be transformed into a plurality of second wavelength period from first spectrum segment of first wavelength period.Thereby also may produce the advantage of the multiple mixture of colours and colour temperature.
The special advantage that has according to semiconductor device of the present invention be the wave spectrum that produces by luminous conversion and thus emission photochromic do not flow through the keeping within bounds of operating current size of semiconductor body.When the ambient temperature of semiconductor device changes, and when causing well-known operating current intensity to produce acute variation thus, this advantage will have special significant meaning.Particularly a kind of is that the light-emitting diode of semiconductor body of base is very responsive in this respect with GaN.
In addition, can only need an independent control voltage, thereby also can only need an independent control voltage configuration, so make the required setup fee of the control circuit of semiconductor device rest on very little degree according to semiconductor device of the present invention.
In according to the version of especially preferentially selecting for use of the present invention, above semiconductor body or above be provided with a kind of luminous transform layer of partially transparent, just supply the luminous transform layer of partially transparent of usefulness of the semiconductor body divergent-ray of divergent-ray.For the light that guarantees to launch can have unified color certainly, what preferentially select for use is that luminous transform layer is made the structure with such constant thickness, so just have good especially advantage, it is all almost constant for all transmit directions to make the light of all transmit directions of semiconductor body emission pass the path of luminous transform layer.Can arrive thus, the light that semiconductor device is launched on all directions all is the light of same color.A kind of according to improve structure, be that according to another good especially advantage of semiconductor device of the present invention adopt simple method just can reach reproducibility highly, this is significant for a kind of efficient production in enormous quantities.Can be used as luminous transform layer usefulness be for example to be mixed with the layer of varnish or the resin bed of fluorescer.
The version of preferentially selecting for use according to another kind of the present invention is the luminous inverting element of making of the luminous conversion involucrum of partially transparent, this involucrum encases the part (sometimes also encasing the part of conductive lead wire) of semiconductor body at least, and uses as structure involucrum (shell) simultaneously.The advantage of a kind of semiconductor device of form mainly is according to this configuration, can follow to use when carrying out this make and make the production line that light-emitting diode (for example radially light-emitting diode) is habitually practised.The structural elements of involucrum is the used transparent plastic of material replacement general-purpose diode with luminous conversion involucrum.
Employing is during according to other favourable versions of semiconductor device of the present invention and above-mentioned two versions of preferentially selecting for use, luminous transform layer or luminous conversion involucrum are the transparent materials that is mixed with a kind of fluorescer at least with a kind of, plastics for example, preferentially selecting for use is epoxy resin (plastics and the fluorescer preferentially selected for use are seen the following stated).When adopting this method, the most economical with the manufacturing cost that adopts luminous inverting element.Used for this reason manufacturing process does not compare with the production line of light-emitting diode can add a large sum of expense in addition.
What adopt that the improvement structure of especially preferentially selecting for use of of the present invention or said structure form needs to consider in advance is that the wavelength of this wavelength period or second wavelength period will be far longer than the wavelength of first wavelength period.
What will consider especially is, complimentary to one another between one second spectrum segment of first wavelength period and one second wavelength period.Adopt such way, can be from a unified colored light sources, particularly the semiconductor body from a unified blue light-emitting produces mixed light, particularly white light.For example, the part of the ray from the blue coloured light spectral coverage of semiconductor body emission is transformed into the sodium yellow spectral coverage of the complementary color of blue look for the semiconductor body that makes blue light-emitting produces white light.By selecting suitable luminous inverting element, particularly granularity, concentration for use, change the colour temperature or the color bits of white light whereby by selecting suitable fluorescer, fluorescer for use.In addition, this structure also helps provides a kind of possibility, promptly adopts the possibility of mixing fluorescer, thereby can help tone is adjusted to point-device degree.So same, for example by means of the fluorescer uneven distribution, make luminous inverting element produce inhomogeneous structure.By above-mentioned measure, the different length that can help passing for light luminous inverting element path compensate.
By the version of the semiconductor device preferentially selected for use according to the present invention, make other members in luminous inverting element or the member involucrum can be, and don't can exert an influence wavelength conversion with adaptive with one or more dyestuffs.Can use the habitual dyestuff of general-purpose diode, for example azo dyes, anthraquinone dye or perinaphthenone (Perinon) dyestuff for this reason.
In order to prevent that luminous inverting element is subjected to the influence of too high radiation dose, by favourable transformation for semiconductor device, perhaps by the above-mentioned version of preferentially selecting for use, adopt on part surface to major general's semiconductor body, for example plastic transparent outer cover encases, and is coated with luminous transform layer in its surface, so as to the radiodensity that reduces luminous inverting element, then reduce its radiation dose, according to the difference of material therefor, to producing desirable influence in useful life of luminous inverting element.
In by measure and version thereof of especially preferentially selecting for use of the present invention, adopt a kind of semiconductor body of launching such ray, promptly the wavelength of emission spectrum emitted between 420nm and 460nm, particularly at the 430nm place (for example with Ga
xAl
1-xN be the basis semiconductor body), perhaps at the 450nm place (for example with Ga
xIn
1-xN is the semiconductor body on basis) maximum of intensity of appearance.Adopt like this, just help producing nearly all color and secondary colour in the C.I.E. color table according to semiconductor device of the present invention.Herein the semiconductor body of divergent-ray be with as listed above mainly be to use the electroluminescence semi-conducting material, but also can be with a kind of other electroluminescent materials, for example polymeric material is made.
During in the improvement structure that other are especially preferentially selected for use of the present invention and in its version, luminous conversion involucrum or luminous transform layer are made with a kind of varnish or plastics, for example are to make with a kind of silicones, thermoplastics or thermoset plastic material (epoxy resin and acrylic acid resin) that swashs in the device involucrum at light.For example can also make top lid member, as the usefulness of luminous conversion involucrum with thermoplastics.Above listed material can adopt simple method to mix one or more fluorescers.
In semiconductor body being arranged on a breach, or among a prefabricated shell, and when indentation, there covers with a top cover that scribbles luminous transform layer, just can realize especially simply according to semiconductor device of the present invention.A kind of semiconductor device like this can be made on common production line in enormous quantities.Must do this only just among this shell, install semiconductor body after on shell, install again, for example the cladding element of making of layer of varnish or casting resin layer perhaps covers the prefabricated cover plate of making of thermoplastics.Also can use the shell breach of transparent material instead, for example use the transparent plastic packing, the special like this wavelength that can not change from the light of semiconductor body emission; If be ready, can also make luminous mapped structure in advance.
For the reason that realizes especially easily, the improvement structure of especially preferentially selecting for use according to semiconductor device of the present invention be with semiconductor body be arranged on one prefabricated or installed already in the shell of lead frame, and using shell at least, the casting resin of partially transparent fills up, before the cast breach, mix fluorescer in advance.Owing to use the pours that is mixed with fluorescer to pour into a mould semiconductor body, just equal to be provided with luminous inverting element.
For making the material that luminous inverting element especially preferentially selects for use is the epoxy resin that is mixed with one or more fluorescers.Also can adopt polymethyl methacrylate (PMMA) substituted epoxy resin.
Can in PMMA, be mixed with organic dye by simple mode.Wanting to make transmitting green, yellow and red, can use according to semiconductor device of the present invention, is the dye molecule of base with perinaphthene alkene (Perylen) for example.Can also be by mixing the semiconductor device that the metal-organic method of 4f-is made emission UV, visible or infrared light.Particularly by mixing Eu
3+For the metal organic chelate (λ ≈ 620nm) of base can realize red-emitting, according to semiconductor device of the present invention.Red-emitting, can be mixed with Ti in advance by mixing the sapphire chelate of 4f-or mixing according to semiconductor device of the present invention, that particularly launch the semiconductor body of blue light
+ 3The method manufacturing that mixes of sapphire.
Adopt so a kind of mode help making the emission white light according to semiconductor body of the present invention, promptly by suitably selecting for use fluorescer will be transformed into the wave band of complementary color by the blue streak of semiconductor body emission, particularly Lan Se and yellow wave band or be transformed into the stack three coloured light, for example blue, green and ruddiness.So just can produce gold-tinted, perhaps produce green glow and ruddiness by fluorescer.Consequent white color (tone in the CIE-color table) can be by suitably selecting dyestuff and the concentration change thereof that mixes usefulness for use.
Be suitable for doing the emission white light, according to the fluorescer of semiconductor device by using of the present invention be the perinaphthene alkene fluorescer of BASF Lumogen F 300 1 classes of the BASF Lumogen F 083, the BASF Lumogen F 240 that jaundice light is used that use of green light, the usefulness that glows for example.These fluorescers can adopt simple mode to mix, for example in the transparent resin.
The method of preferentially selecting for use that a kind of semiconductor body that utilizes blue light-emitting is made the semiconductor device of green light is to replace UO in the luminous inverting element with borosilicate glass
2 ++
Employing is for according to semiconductor device of the present invention and to carry out the improved improvement structure that another is preferentially selected for use for the structure of above-mentioned favourable version be to mix the optical scatter that is referred to as diffusant in addition in other transmission components of luminous inverting element or structure involucrum.Can help making the coloring of semiconductor device and emissivity to reach optimization by this way.
A kind of particularly advantageous version according to semiconductor device of the present invention is to mix a kind of inorganic fluorescer at least a portion transparent epoxy resin of luminous inverting element.Best method just adopts straightforward procedure to make inorganic fluorescer and epoxy resin form compound.A kind of inorganic fluorescer that especially preferentially select for use, that be used for making the semiconductor device that emits white light is phosphorus YAG:Ce (Y
3Al
5O
12: Ce
3+).This fluorescer can adopt simple especially method to mix mutually with the transparent epoxy resin of habitually practising in LED technology.Other can be considered as the garnet that doped with rare-earth elements is arranged that fluorescer is used, as Y
3Ga
5O
12: Ce
3+, Y (Al, Ga)
5O
12: Ce
3+, Y (Al, Ga)
5O
12: Tb
3+And the sulfide such as the SrS:Ce that are mixed with the alkaline-earth metal of rare earth element
3+, Na, SrS:Ce
3+, Cl, SrS:CeCl
3, CaS:Ce
3+And SrSe:Ce
3+
In addition, be mixed with the sulfo-gallate of rare earth element, for example CaGa
2S
4: Ce
3+, SrGa
2S
4: Ce
3+Be particularly suitable for generating dissimilar mixed-color light.Also can consider to use the aluminate that is mixed with rare earth element, for example YAlO
3: Ce
3+, YGaO
3: Ce
3+, Y (Al, Ga) O
3: Ce
3+And the orthosilicate M that is mixed with rare earth element
2SiO
5: Ce
3+(M:Sc, Y, Sc) Y for example
2SiO
5Ce
3+The compound of all yttriums can substitute with scandium or lanthanum in principle.
Another one can with the version according to semiconductor device of the present invention be to adopt the luminescence component of the involucrum that pure inorganic material makes at least, that is to say, be luminous conversion involucrum or the luminous transform layer that adopts pure inorganic material to make.Therefore, luminous inverting element is to mix inorganic fluorescer make in the material to the transparent or partially transparent of temperature stabilization with a kind of.Particularly use a kind of advantageous method to mix in the unorganic glass (for example silex glass) of low melting glass that a kind of Phos makes.A kind of method of preferentially selecting for use of making so luminous transform layer is the Sol-Gel-technology, and adopting this technology is with whole luminous transform layer, is not only the material that inorganic fluorescer also mixes to some extent and can carries out in one procedure.
In order to improve mixing by the ray of the ray of first wavelength period of semiconductor body emission and second wavelength period of passing through luminous conversion, and radiative look uniformity, to in according to semiconductor device of the present invention, adopt favourable measure, in luminous involucrum or luminous transform layer and/or mix a kind of dyestuff of blue light-emitting in other elements of structure involucrum in addition, so as to reducing alleged orientation characteristic by the semiconductor body divergent-ray.Orientation characteristic is to instigate the ray of semiconductor body emission to present a kind of transmit direction of preferentially selecting for use.
In an a kind of measure of preferentially selecting for use according to semiconductor device of the present invention, adopt inorganic fluorescer powder to achieve the above object, the fluorescer of this moment can dissolving in the material (substrate) around it.In addition, the refractive index of inorganic fluorescer and the material around it is different.So just increased a favourable part, promptly the part of the light that is not absorbed by fluorescer can not be subjected to keeping within bounds of fluorescer granularity and produce scattering.Will reduce the orientation characteristic of semiconductor body divergent-ray greatly like this, thereby make the ray of unabsorbed ray and the luminous conversion of process be able to even mixing, the result causes producing three-dimensional evenly look and presses.
Owing to make luminous conversion involucrum or used epoxy resin and the inorganic fluorescer (Y of luminous transform layer
3Al
5O
12: Ce
3+) mix mutually, so a kind of launch white light, can realize in particularly preferred mode according to semiconductor device of the present invention.Part by the blue look ray of semiconductor body emission is displaced to yellow spectrum segment by inorganic fluorescer, thereby is pushed to the wavelength period with blue look complementation.By the melting concn of suitable selection dyestuff, can change the tone (color bits in the CIE color table) of white light.
Inorganic fluorescer YAG:Ce also has an other advantage, promptly can become a kind of refractive index therefrom at the insoluble pigment about 1.84 (granularity is in 10 μ m).Also can produce a kind of scattering effect like this except wavelength generation conversion, the result causes making the ray of the diode of launching blue light and the gold-tinted of process conversion emission to carry out good mixing.
In another improvement structure of preferentially selecting for use according to semiconductor device of the present invention, and in the above-mentioned favourable version, the member that sees through ray to other one of luminous inverting element or structure involucrum increases in addition and is mixed with the optical scatter that is called diffusant.Adopt such way, help the further optimization of look pressure and semiconductor device emitting performance.
Special good advantage is, launching the semiconductor device of white light and said structure form thereof, main according to the present invention is that the luminous efficiency of semiconductor body of the blue light-emitting made of base and the luminous efficiency of an incandescent lamp bulb have comparativity with GaN.Its reason is that the outside quantum output variable of this semiconductor body has only a few percent, and on the other hand the luminous efficiency of organic dye molecule through being everlasting more than 90%.In addition, compare with incandescent lamp bulb according to semiconductor device of the present invention, its in useful life speciality, very solid, operating voltage is less.
Favourable part in addition is, owing to the sensitivity of naked eyes along with the increase of wavelength is increased, so human eye for according to the resolution capability of semiconductor device brightness of the present invention with for being unkitted comparing of luminous inverting element, although semiconductor device equally all is housed, but can obviously improves for the former.
In addition, the favourable part according to the principle of the invention also is also can make visible emitting into when a semiconductor body except the emission ultraviolet rays.The brightness of the light of semiconductor body emission is obviously improved.
The said herein notion that makes semiconductor body launch blue light by luminous conversion can also help utilizing the multi-stage light emitting inverting element to be expanded according to ultraviolet → indigo plant → green → Huang → red order.At this moment, according to sequencing the luminous inverting element of multiple spectrum being selected emission is set in the semiconductor body back.
The dye molecule that can also adopt favourable mode that multiple different spectrum selection is launched mixes among the transparent plastic of luminous inverting element in the lump.So just can produce very wide coloured light spectrum.
Special use YAG:Ce to make special benefits luminous conversion dyestuff, that launch the semiconductor device of white light according to the present invention to be, this fluorescer is subjected to blue-light excited meeting produces about 100nm between the absorption of spectrum and emission passing.This back suction that can cause reducing the light of launching for fluorescer is greatly received, and the result causes the raising of luminous efficiency.In addition, YAG:Ce has (for example UV-) high stability (mainly being to be higher than the organic fluorescence agent) of favourable light and heat chemistry, so be suitable for the diode that emits white light that is manufactured on the open air and uses in high temperature section.
Up to now, YAG:Ce obviously is being a most suitable a kind of fluorescer aspect back suction receipts, optical efficiency, photochemical stability and the manufacturing processing.And it is believed that and to be used for using at the garnet that is mixed with the phosphorus of Ce, particularly be mixed with Ce.
According to the present invention particularly advantageous be to be particularly suitable for the power consumption that panchromatic LED shows little, be suitable in the Kfz car or aircraft cabin intraoral illumination and in the illumination of the display unit of Kfz panel board etc. or liquid crystal display, using.
Description of drawings
According to other features of the present invention, advantage and practicality referring to the explanation of following 9 embodiment in conjunction with Fig. 1 to 14.
Fig. 1 is the constructed profile according to semiconductor device first embodiment of the present invention;
Fig. 2 is the constructed profile according to semiconductor device second embodiment of the present invention;
Fig. 3 is the constructed profile according to semiconductor device the 3rd embodiment of the present invention;
Fig. 4 is the constructed profile according to semiconductor device the 4th embodiment of the present invention;
Fig. 5 is the constructed profile according to semiconductor device the 5th embodiment of the present invention;
Fig. 6 is the constructed profile according to semiconductor device the 6th embodiment of the present invention;
Fig. 7 is an emission spectrum schematic diagram of launching the semiconductor body of blue light that has with GaN a sandwich construction that is base;
Fig. 8 is the emission spectrum schematic diagram according to the semiconductor device of two emission white lights of the present invention;
Fig. 9 is the generalized section of the semiconductor body of emission blue light;
Figure 10 is the constructed profile according to semiconductor device the 7th embodiment of the present invention;
Figure 11 is the emission spectrum schematic diagram according to semiconductor device of the present invention that emission mixes ruddiness;
Figure 12 be the emission white light according to other the emission spectrum schematic diagram of semiconductor device of the present invention;
Figure 13 is the constructed profile according to semiconductor device the 8th embodiment of the present invention;
Figure 14 is the constructed profile according to semiconductor device the 9th embodiment of the present invention.
Part same or a same purpose in each figure is marked with same label.
Embodiment
Luminous semiconductor device shown in Figure 1 has a semiconductor body 1, back side contact 11, a front contact 12 and a sandwich construction 7 that is stacked to by different laminations, wherein also has the active area of an at least a ray of emission (for example ultraviolet, indigo plant or green) in the semiconductor device operating state.
Shown in Figure 9 is the example that is suitable for as a kind of sandwich construction 7 of the element among this element and the embodiment that all are introduced afterwards.Among the figure, one deck is set on the substrate made from SiC 18 scribbles AlN-or GaN-layer 19, the GaN-layer 20 of one deck n-conducting, the Ga of one deck n-conducting
xAl
1-xN-or Ga
xIn
1-xGaN-or one deck Ga of N-layer 21, an other n-conducting
xIn
1-xThe Ga of N-layer 22, one deck p-conducting
xAl
1-xN-layer or Ga
xIn
1-xThe sandwich construction of the GaN-layer 24 of N-layer 23 and one deck p-conducting.On a first type surface 25 of GaN-layer 24, and on a first type surface 26 of substrate 18 a Metal Contact part 27,28 is set respectively, this is that employing used material in the conductive contact piece of habitual emitting semiconductor technology is made.
Also can adopt other semiconductor bodies of thinking to be fit to according to others skilled in the art as using according to semiconductor device of the present invention.This is equally applicable to all embodiment of the following stated.
In the embodiment in figure 1, semiconductor body adopts a kind of electrically conducting adhesive, and for example a kind of brazing metal or adhesives are fixed on its bottom surface contact 11 on first conductive lead wire 2.Front contact 12 adopts a binding metal silk 14 to be connected with one second conductive lead wire 3.
A part of line segment of semiconductor body 1 unappropriated surface and conductive lead wire 2 and 3 is directly encased with a kind of luminous conversion involucrum 5.This involucrum be preferentially select for use a kind of in transparent LED, use be mixed with fluorescer 6, preferentially select for use the transparent plastic that is mixed with inorganic fluorescer (preferentially select for use be epoxy resin or also can use polymethyl methacrylate) to make; The device that emits white light is preferentially selected Y for use
3Al
5O
12: Ce
3+(YAG:Ce) blending.
Be according to the embodiment of semiconductor component of the present invention and the difference of Fig. 1 that shown in Fig. 2 the part line segment of semiconductor body 1 and conductive lead wire 2 and 3 is not with a kind of luminous coversion material but encases with a kind of transparent involucrum 15.This involucrum can not make the beam wavelength of semiconductor body 1 emission change; Be with a kind of, for example habitual epoxy resin or acrylate or another kind of material that can printing opacity in light-emitting diode technology, for example unorganic glass is made.
Coating one deck luminous transform layer 4 on this transparent involucrum 15 as shown in Figure 2, encases the whole surface of involucrum 15, also can only encase this surperficial part with luminous transform layer 4.Luminous transform layer 4 remains usefulness, is for example made by a kind of transparent plastic that is mixed with fluorescer 6 (for example epoxy resin, varnish or methyl methacrylate).The semiconductor device that emits white light so also is preferentially to select for use YAG:Ce as fluorescer.
The distinctive advantage of this embodiment is, the path of being passed luminous inverting element by the ray of semiconductor body emission equates substantially.Erect image is recurrent like that, and when the accurate tone of the light of being launched by semiconductor device will depend on the length in this path, this length will play the effect of particular importance.
The output coupling of the light that is sent for the luminous transform layer 4 that improves among Fig. 2 can be provided with a lentiform nappe 29 (dotting) on a side of this device, the total reflection of emission light in luminous transform layer 4 inside is used for decaying.This lentiform nappe 29 can then, for example be bonded on the luminous transform layer 4 with transparent plastic or glass manufacturing, perhaps directly is made as the overall structure of the member of luminous transform layer 4.
In the embodiment shown in fig. 3, first and second lead-in wires the 2, the 3rd are embedded in printing opacity or prefabricated, as to leave a breach 9 pedestal 8.So-called " prefabricated " is meant, adopted that for example injection moulding is connected base 8 the finished product structure that forms on the lead-in wire 2,3 in advance before semiconductor body being installed on the lead-in wire 2.Base 8 is, for example made by a kind of plastics of printing opacity, and breach 9 is to make the speculum (sometimes by the suitable coating on breach 9 inwalls) that is used for reflecting the usefulness of the ray of being launched at the semiconductor body duration of work according to its shape.Such base 8 is as for the usefulness of the conductive plate of mounted thereto light-emitting diode.Be to adopt before semiconductor body is installed, for example injection moulding is installed in base on the conductive strips (lead frame) of conductive lead wire 2,3.
Embodiment in the positive print 2 is such, in order to improve the optical coupling that comes self-luminous transform layer 4, also a lentiform nappe 29 (dotting) can be set above it herein, is used for decaying in the total reflection of the light of luminous transform layer 4 emissions.This nappe can be used the transparent plastic manufacturing, is bonded at, and above for example luminous transform layer 4, perhaps makes an overall structure jointly with luminous transform layer 4.
As shown in figure 10, in a kind of version of especially preferentially selecting for use, breach 9 usefulness are a kind of contain fluorescer epoxy resin, that is to say it is with a kind of luminous involucrum 5 fillings, form the structure of luminous inverting element.Just can save a cover plate 17 and/or a lentiform nappe 29 in the case.In addition, also have another kind of way as shown in figure 13, for example with first conductive lead wire 2 by punching press in the scope of semiconductor body 1 with the interior structure that makes a reflective mirror 34, middle with a kind of luminous conversion involucrum 5 fillings.
Shown in Figure 4 is a kind of radially example of the another kind of manufacture method of diode that is called.Among the figure, semiconductor body 1 be by, for example the welding or the bonding method, be fixed among a kind of mirror construction parts 16 that make with first conductive lead wire 2.The structure of this shell shape is a shape habitual in light-emitting diode technology, so no longer elaborate herein.
The luminous transform layer 4 of coating one deck on this transparent involucrum 15.Used for this reason material still can be plastics or the unorganic glass that adopts in above-described embodiment, adds the relevant dyestuff at these place row.
The total that is made of semiconductor body 1, a part of conductive lead wire 2,3, transparent involucrum 15 and luminous transform layer 4 directly encases with another kind of transparent involucrum 10.The wavelength of the ray that sees through luminous transform layer 4 emissions is changed.This involucrum remains, and for example adopts transparent epoxy resin habitual in light-emitting diode technology or unorganic glass to make.
Embodiment shown in Figure 5 and the main difference part among Fig. 4 are that the vacant surface of semiconductor body 1 directly encases with a luminous conversion involucrum 5, and then encase with another kind of transparent involucrum 10.In Fig. 5, also draw a semiconductor body 1 as example, another contact-making surface of wherein making contact without the lower edge but using semiconductor multilayer structure 7 instead is made contact, and one second of The latter connects metal wire 14 and is connected with its affiliated conductive lead wire 2 or 3.Self-evident, also can replace such semiconductor body 1 with other embodiment of this paper introduction.Otherwise, the embodiment among Fig. 5 can certainly be used in the aforementioned embodiment.
Also to be explained for this self-evident situation herein, the way of planform analogy Fig. 1 embodiment that also can Fig. 5 is used is made a luminous conversion involucrum 5 of integral body, thereby replaces the way that the transparent involucrum 10 of luminous conversion involucrum 5 and another is used in combination.
In the embodiment of Fig. 6, directly on semiconductor body 1, be coated with the luminous transform layer 4 of one deck (available above listed material).The another kind of transparent involucrum 10 of this semiconductor body 1 and a part of conductive lead wire 2,3 usefulness encases, and the wavelength of the ray that sees through luminous transform layer 4 emissions is changed.This involucrum remains, and for example adopts transparent epoxy resin habitual in light-emitting diode technology or glass to make.
Have the luminous transform layer 4 of one deck like this but do not have the semiconductor body 1 of involucrum to also help certainly to adopt fully shell shape habitual in semiconductor technology (for example SMD shell, radially shell (seeing also Fig. 5)).
At the embodiment shown in Figure 14 is according to a semiconductor device of the present invention, and a transparent channel member 35 is set on semiconductor body 1, and Here it is at one of semiconductor body 1 outside bag groove 36.Groove shape parts 35 for example make with transparent epoxy resin or unorganic glass, and, for example adopt injection moulding, conductive lead wire 2,3 is encapsulated in together with semiconductor body 1 makes.In such bag groove 36, comprise and scribble one deck and remain the luminous transform layer made from epoxy resin or unorganic glass 4, wherein be mixed with above listed inorganic fluorescer particle.Adopt the advantage of this structure to be, can be to guarantee that structure is very simple, fluorescer can not accumulate in advance and not consider in the manufacture process of semiconductor device, for example near the position semiconductor body.Groove shape parts 35 can certainly be made separately separately, also can use instead, and the way that for example covers on the semiconductor body 1 is fixed on the casing component.
Among the embodiment that more than all, introduces, reach optimization in order to make color get involved radiative degree, in order to make itself and luminous inverting element (luminous conversion involucrum 5 or luminous transform layer 4) suitable, sometimes in transparent involucrum 15 and/or transparent involucrum 10, mix optical scatter, the most advantageously mix diffusant.Example as such diffusant is the filler of mineral, particularly CaF
2, TiO
2, SiO
2, CaCO
3Or BaSO
4, perhaps also can use organic pigment.These materials can adopt simple method to mix among the above-mentioned plastics.
Shown in Fig. 7,8 and 12 be a kind of blue light of semiconductor body emission emission spectrum (Fig. 7) (luminous maximum at λ=430nm) or emitting white light of adopting that a kind of such semiconductor body makes, according to the emission spectrum of semiconductor device of the present invention (Fig. 8 and Figure 12).Respectively unit mark wavelength X on abscissa; On ordinate, mark a kind of relative electroluminescence (EL) intensity respectively.
Only some is for conversion into the long wavelength period of wavelength to the ray of being launched by semiconductor body shown in Figure 7, thereby produces the white light of secondary colour.The curve 30 that is represented by dotted lines in Fig. 8 is the emission spectrum according to a kind of semiconductor device of the present invention, and this ray is formed by two kinds of auxiliary wavelength period (Lan Hehuang), total emission be white light.Spectrum among the figure about 400 and 430nm between (indigo plant) and about 550 and 580nm between (Huang) maximum appears respectively.Emission spectrum according to semiconductor device of the present invention of whole piece curve 31 expressions, white is to be mixed by three kinds of wavelength period (by blue, green, the red stack that constitutes three looks).Emission spectrum among the figure for example about 430nm about (indigo plant), 500nm about (green) and 615nm (red) locate to have respectively a maximum.
Emission shown in Figure 11 in addition is by the emission spectrum according to semiconductor device of the present invention of the mixed light of blue light (a kind of maximum of wavelength is at about 470nm) and ruddiness (a kind of maximum of wavelength is about 620nm) formation.Emission light is pressed total look of human eye and is magenta.Still be equivalent to shown in Figure 7 by the semiconductor body emission spectrum emitted herein.
Shown in Figure 12 be one emit white light, according to semiconductor device of the present invention, possess the emission emission spectrum shown in Figure 7 semiconductor body, wherein used fluorescer is YAG:Ce.In the ray of semiconductor body emission, have only sub-fraction to be transformed into the long wavelength period of wavelength, thereby produce mixed white light.Curve 31 to 33 with different dotted lines among Fig. 8 is emission spectrum of representing according to semiconductor device of the present invention.Luminous inverting element, luminous inverting element is wherein made with epoxy resin, contains the YAG:Ce of variable concentrations.Each emission spectrum a maximum of intensity occurring between the λ=420nm and λ=430 of blue coloured light spectral coverage, between λ=520 of green light spectral coverage and λ=545 respectively, and most of emission band that wherein contains the maximum of intensity of a longer wavelength all is in the sodium yellow spectral coverage.As seen adopt according to semiconductor device of the present invention and need only the concentration of passing through to change the fluorescer in the epoxy resin simply by obvious in Figure 12 curve, just can change the CIE-color bits in the white light.
In addition, garnet, sulfo-gallic acid, the alkaline-earth metal-sulfide aluminate that is mixed with Ce directly can also be coated on the semiconductor body, will it not be dispersed in epoxy resin or the glass.
An other special benefits of above-mentioned inorganic fluorescer is, the concentration of fluorescer in epoxy resin for example can will not be subjected to keeping within bounds of solubility as the organic fluorescence agent.Thereby do not need with very thick luminous inverting element.
Surely not will be confined on these embodiment for explanation by the foregoing description according to semiconductor device of the present invention according to the present invention.Be with light-emitting diode chip for backlight unit or laser diode chip example in example as semiconductor body, it is also understood that into, for example be the polymer LED of the corresponding spectrum of emission.
Claims (30)
1. luminous semiconductor device comprises:
A semiconductor body (1), it sends electromagnetic radiation when described semiconductor device is worked; At least one first lead-in wire and at least one second electrical lead (2,3), they are connected with described semiconductor body (1) conduction; And a luminous inverting element that contains at least a fluorescent material,
It is characterized in that:
Described semiconductor body (1) has one group of semiconductor layer (7), and they are suitable for the electromagnetic radiation of sending first wavelength period when semiconductor device is worked, and wherein comprise the radiation of ultraviolet spectral range,
Described luminous inverting element is transformed into visible light with at least a portion of the radiation of this ultraviolet spectral range.
2. according to the luminous semiconductor device of claim 1, it is characterized in that: described luminous inverting element (4,5) contains at least a inorganic fluorescent material (6).
3. according to the luminous semiconductor device of claim 2, it is characterized in that: described inorganic fluorescent material is from one group of material that wherein comprises rare earth doped garnet, rare earth doped alkaline earth sulfide, rare earth doped sulfo-gallate, rare earth doped aluminate and rare earth doped orthosilicate.
4. according to the luminous semiconductor device of claim 2, it is characterized in that: described inorganic fluorescent material (6) is from the garnet material of one group of doped Ce element.
5. according to the luminous semiconductor device of claim 2, it is characterized in that: described inorganic fluorescent material is YAG:Ce.
6. according to the luminous semiconductor device of claim 2, it is characterized in that: described inorganic fluorescent material is injected in the binder that is made of epoxy resin or acrylic acid resin.
7. according to the luminous semiconductor device of claim 2, it is characterized in that: described inorganic fluorescent material is injected in the binder that is made of silicone material.
8. according to the luminous semiconductor device of each claim among the claim 1-7, it is characterized in that: from the main transmit direction of described semiconductor device, described luminous inverting element is arranged on described semiconductor body (1) afterwards.
9. luminous semiconductor device according to Claim 8, it is characterized in that: described semiconductor body (1) is arranged in the cavity (9) of drain pan (8), and this cavity (9) is filled by luminous inverting element at least in part.
10. luminous semiconductor device according to Claim 8, it is characterized in that: be provided with a luminous conversion involucrum (5) as luminous inverting element, this luminous conversion involucrum surrounds at least a portion of described semiconductor body (1) and the subregion of described first and second electrical leads (2,3).
11. luminous semiconductor device according to Claim 8 is characterized in that: in the top of described semiconductor body (1) or on the surface of described semiconductor body (1), be provided with at least the luminous transform layer of one deck (4) as luminous inverting element.
12. the luminous semiconductor device according to each claim among the claim 2-5 is characterized in that: described inorganic fluorescent material directly is coated on the described semiconductor body.
13. luminous semiconductor device according to Claim 8 is characterized in that: described semiconductor body (1) is arranged in the cavity (9) of drain pan (8), and this cavity (9) is furnished with a cover layer with luminous transform layer (4).
14. luminous semiconductor device according to Claim 8 is characterized in that: second wavelength period of described visible light contains the wavelength X greater than first wavelength period at least in part.
15. luminous semiconductor device according to Claim 8, it is characterized in that: the radiation of a branch of first wavelength period of being sent by described semiconductor body (1) and the visible light that is obtained by the ultraviolet light frequency conversion are in the spectral region of complementary colours at least in part, thereby produce white light.
16. luminous semiconductor device according to Claim 8, it is characterized in that: the radiation of a branch of first wavelength period of being sent by described semiconductor body (1) and the visible light that is obtained by the ultraviolet light frequency conversion produce the fluorescent three group of an addition, so that therefrom send white light when semiconductor device is worked.
17. luminous semiconductor device according to Claim 8 is characterized in that: described luminous inverting element comprises a plurality of layers with different wave length conversion characteristics.
18. the luminous semiconductor device according to claim 2 is characterized in that: described inorganic fluorescent material is injected in the binder that is made of thermoplastic or thermosets.
19. the luminous semiconductor device according to claim 2 is characterized in that: described inorganic fluorescent material is injected in the binder that is made of the low melting point unorganic glass.
20. the luminous semiconductor device according to each claim among the claim 2-7 is characterized in that: described inorganic fluorescent material has the mean particle size of 10 μ m.
21. luminous semiconductor device according to Claim 8 is characterized in that: described luminous inverting element contains multiple different organic and/or inorganic fluorescent material (6).
22. luminous semiconductor device according to Claim 8 is characterized in that: a described luminous inverting element and/or a transparent involucrum (10,15) have optical scatter.
23. luminous semiconductor device according to Claim 8 is characterized in that: a described luminous inverting element and/or a transparent involucrum (10,15) contain the fluorescent material of at least a blue light-emitting.
24. luminous semiconductor device according to Claim 8, it is characterized in that: described luminous inverting element comprises organic or inorganic with wavelength conversion effect or organic and inorganic pigment molecular, and described luminous inverting element comprises organic or inorganic with wavelength conversion effect or organic and inorganic pigment molecular.
25. luminous semiconductor device according to Claim 8 is characterized in that: described luminous inverting element contains one or more luminous 4f-metallo-organic compounds.
26. have the LED display unit of a plurality of luminous semiconductor devices according to Claim 8.
27. have the lighting device of a plurality of luminous semiconductor devices according to Claim 8.
28. have the liquid crystal display illumination of at least one luminous semiconductor device according to Claim 8.
29. have the panchromatic LED display unit of a plurality of luminous semiconductor devices according to Claim 8.
30. have the interior lighting of the aircraft cockpit of a plurality of luminous semiconductor devices according to Claim 8.
Applications Claiming Priority (3)
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| DE19625622A DE19625622A1 (en) | 1996-06-26 | 1996-06-26 | Light radiating semiconductor constructional element |
| DE19625622.4 | 1996-06-26 | ||
| DE19638667.5 | 1996-09-20 |
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|---|---|---|---|
| CN2003101181792A Division CN1534803B (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device with light-emitting conversion element |
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| CN100502066C true CN100502066C (en) | 2009-06-17 |
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| CNB2005100917295A Expired - Lifetime CN100442555C (en) | 1996-06-26 | 1997-06-26 | Radiation-emitting semiconductor device and device containing the semiconductor device |
| CNB2006101016500A Expired - Lifetime CN100435369C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device with light-emitting conversion element |
| CN200610101860XA Expired - Lifetime CN1917240B (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor component with luminescence conversion element |
| CNB2006100999800A Expired - Lifetime CN100514684C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device and device containing the same |
| CN200610101629.0A Expired - Lifetime CN1893136B (en) | 1996-06-26 | 1997-06-26 | Light radiating semiconductor device and arrangement containing same |
| CNB2005100917280A Expired - Lifetime CN100565945C (en) | 1996-06-26 | 1997-06-26 | The semiconductor chip of divergent-ray and comprise the device of this semiconductor chip |
| CNB2005100917308A Expired - Lifetime CN100433382C (en) | 1996-06-26 | 1997-06-26 | Single covering element for semiconductor device outer case and apparatus containing the same |
| CNB2006100999783A Expired - Lifetime CN100557833C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device and device including the light-emitting semiconductor device |
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| CNB2005100917295A Expired - Lifetime CN100442555C (en) | 1996-06-26 | 1997-06-26 | Radiation-emitting semiconductor device and device containing the semiconductor device |
| CNB2006101016500A Expired - Lifetime CN100435369C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device with light-emitting conversion element |
| CN200610101860XA Expired - Lifetime CN1917240B (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor component with luminescence conversion element |
| CNB2006100999800A Expired - Lifetime CN100514684C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device and device containing the same |
| CN200610101629.0A Expired - Lifetime CN1893136B (en) | 1996-06-26 | 1997-06-26 | Light radiating semiconductor device and arrangement containing same |
| CNB2005100917280A Expired - Lifetime CN100565945C (en) | 1996-06-26 | 1997-06-26 | The semiconductor chip of divergent-ray and comprise the device of this semiconductor chip |
| CNB2005100917308A Expired - Lifetime CN100433382C (en) | 1996-06-26 | 1997-06-26 | Single covering element for semiconductor device outer case and apparatus containing the same |
| CNB2006100999783A Expired - Lifetime CN100557833C (en) | 1996-06-26 | 1997-06-26 | Light-emitting semiconductor device and device including the light-emitting semiconductor device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI489055B (en) * | 2012-06-29 | 2015-06-21 | Advanced Optoelectronic Tech | LED light bar |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19638667C2 (en) | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mixed-color light-emitting semiconductor component with luminescence conversion element |
| KR100537349B1 (en) | 1996-06-26 | 2006-02-28 | 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 | Light-emitting semiconductor component with luminescence conversion element |
| DE19803936A1 (en) * | 1998-01-30 | 1999-08-05 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Expansion-compensated optoelectronic semiconductor component, in particular UV-emitting light-emitting diode and method for its production |
| DE19829197C2 (en) | 1998-06-30 | 2002-06-20 | Siemens Ag | Component emitting and / or receiving radiation |
| DE19836943B9 (en) * | 1998-08-17 | 2008-01-31 | Osram Opto Semiconductors Gmbh | Photoluminescent layer in the optical and adjacent spectral regions |
| US6204523B1 (en) * | 1998-11-06 | 2001-03-20 | Lumileds Lighting, U.S., Llc | High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range |
| DE19934126A1 (en) * | 1999-07-23 | 2001-01-25 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Fluorescent oxide for forming white LEDs, includes cerium-activated garnet-based oxide with terbium addition |
| EP1234140B2 (en) † | 1999-11-18 | 2015-11-25 | Philips Lighting North America Corporation | Systems and methods for generating and modulating illumination conditions |
| TW530424B (en) * | 2000-02-09 | 2003-05-01 | Nippon Leiz Corp | Light source device |
| WO2001062868A1 (en) * | 2000-02-23 | 2001-08-30 | Technische Universität Dresden | Photo-luminescence layer in the optical spectral region and in adjacent spectral regions |
| DE10032453A1 (en) * | 2000-07-04 | 2002-01-24 | Vishay Semiconductor Gmbh | Radiation emitting component used for producing white light has pigments of one or more luminescent dyes arranged in and/or on a glass housing |
| DE10109349B4 (en) * | 2001-02-27 | 2012-04-19 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component |
| DE10112542B9 (en) * | 2001-03-15 | 2013-01-03 | Osram Opto Semiconductors Gmbh | Radiation-emitting optical component |
| US6841802B2 (en) | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
| US7554258B2 (en) | 2002-10-22 | 2009-06-30 | Osram Opto Semiconductors Gmbh | Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body |
| KR101280003B1 (en) | 2002-12-25 | 2013-07-05 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | Light emitting element device, light receiving element device, optical apparatus, fluoride crystal, process for producing fluoride crystal and crucible |
| DE10261908B4 (en) * | 2002-12-27 | 2010-12-30 | Osa Opto Light Gmbh | Method for producing a conversion light-emitting element based on semiconductor light sources |
| DE10305093A1 (en) * | 2003-02-07 | 2004-08-19 | BSH Bosch und Siemens Hausgeräte GmbH | Method and device for determining and monitoring contamination states of different liquids |
| US7633093B2 (en) | 2003-05-05 | 2009-12-15 | Lighting Science Group Corporation | Method of making optical light engines with elevated LEDs and resulting product |
| US7528421B2 (en) | 2003-05-05 | 2009-05-05 | Lamina Lighting, Inc. | Surface mountable light emitting diode assemblies packaged for high temperature operation |
| US7157745B2 (en) | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
| US7777235B2 (en) | 2003-05-05 | 2010-08-17 | Lighting Science Group Corporation | Light emitting diodes with improved light collimation |
| EP2400566B1 (en) * | 2003-11-04 | 2014-02-26 | Panasonic Corporation | Semiconductor light emitting device, lighting module, lighting apparatus |
| DE102005020695B4 (en) * | 2004-04-30 | 2006-06-22 | Optotransmitter-Umweltschutz-Technologie E.V. | Radiation emitting device with variable spectral properties, superimposes beams from luminescent dyes with different absorption spectra excited by LEDs with different emission spectra |
| DE102004042461A1 (en) | 2004-08-31 | 2006-03-30 | Novaled Gmbh | Top-emitting, electroluminescent device with frequency conversion centers |
| EP1808909A1 (en) | 2006-01-11 | 2007-07-18 | Novaled AG | Electroluminescent light-emitting device |
| DE102006015115A1 (en) * | 2006-03-31 | 2007-10-04 | Osram Opto Semiconductors Gmbh | Electronic module, has units and body covered with electrical insulating layer, where units have surfaces that are electrically conductive and connected by one unit with contact area of body and by path structure |
| DE102007002003B4 (en) * | 2007-01-08 | 2013-11-21 | Johnson Controls Automotive Electronics Gmbh | Indicating instrument, in particular for a motor vehicle, and method for producing a display instrument |
| DE102007057710B4 (en) * | 2007-09-28 | 2024-03-14 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Radiation-emitting component with conversion element |
| DE102008006988A1 (en) * | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
| DE102008026841A1 (en) * | 2008-02-22 | 2009-08-27 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
| DE102008020882A1 (en) * | 2008-04-25 | 2009-10-29 | Ledon Lighting Jennersdorf Gmbh | Light emitting device, has inhomogeneous light source and wavelength converting element positioned in relation to each other such that pre-defined optical characteristics of light is achieved by device |
| DE102008025756B4 (en) * | 2008-05-29 | 2023-02-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | semiconductor device |
| US7868340B2 (en) | 2008-05-30 | 2011-01-11 | Bridgelux, Inc. | Method and apparatus for generating white light from solid state light emitting devices |
| DE102008045882A1 (en) * | 2008-09-04 | 2010-03-11 | Esw Gmbh | Dummy exploding |
| DE102008057720B4 (en) * | 2008-11-17 | 2024-10-31 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | radiation-emitting device |
| KR100996446B1 (en) * | 2010-05-24 | 2010-11-25 | 엘지이노텍 주식회사 | Light emitting device, method for fabricating the light emitting device and light emitting device package |
| DE102010026343A1 (en) * | 2010-07-07 | 2012-03-29 | Osram Opto Semiconductors Gmbh | Component and method for manufacturing a device |
| DE102010047156A1 (en) * | 2010-09-30 | 2012-04-05 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
| DE102011003969B4 (en) * | 2011-02-11 | 2023-03-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Process for producing an optoelectronic component |
| DE102011001928A1 (en) * | 2011-04-08 | 2012-10-11 | Lumitech Produktion Und Entwicklung Gmbh | Color conversion element and lamp |
| DE102011101052A1 (en) | 2011-05-09 | 2012-11-15 | Heraeus Materials Technology Gmbh & Co. Kg | Substrate with electrically neutral region |
| DE102011078906A1 (en) * | 2011-07-11 | 2013-01-17 | Osram Opto Semiconductors Gmbh | METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT BY MEANS OF SPRAYING |
| US9624426B2 (en) * | 2011-08-04 | 2017-04-18 | Philips Lighting Holding B.V. | Light converter and lighting unit comprising such light converter |
| TWI626395B (en) * | 2013-06-11 | 2018-06-11 | 晶元光電股份有限公司 | Illuminating device |
| JP6323650B2 (en) * | 2013-12-20 | 2018-05-16 | セイコーエプソン株式会社 | Surface emitting laser and atomic oscillator |
| DE102014117764A1 (en) * | 2014-12-03 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Radiation-emitting optoelectronic semiconductor component and method for its production |
| KR102451208B1 (en) * | 2015-02-04 | 2022-10-06 | 메르크 파텐트 게엠베하 | Electro-Optical Switching Elements and Display Devices |
| DE102018121324A1 (en) * | 2018-08-31 | 2020-03-05 | Osram Opto Semiconductors Gmbh | Sol gels as binders for the production of conversion elements |
| CN111312881A (en) * | 2020-02-27 | 2020-06-19 | 盐城东山精密制造有限公司 | A kind of integral molding LED device and its manufacturing method |
| DE102020206897A1 (en) | 2020-06-03 | 2021-12-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | OPTOELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3316109A (en) * | 1963-03-11 | 1967-04-25 | Westinghouse Electric Corp | Coating composition |
| US3440471A (en) * | 1966-03-16 | 1969-04-22 | Gen Telephone & Elect | Electroluminescent cell matrix material of improved stability |
| JPS48102585A (en) * | 1972-04-04 | 1973-12-22 | ||
| US3774086A (en) * | 1972-09-25 | 1973-11-20 | Gen Electric | Solid state lamp having visible-emitting phosphor at edge of infrated-emitting element |
| US4599537A (en) * | 1982-04-30 | 1986-07-08 | Shigeaki Yamashita | IR light emitting apparatus with visible detection means |
| US4479886A (en) * | 1983-08-08 | 1984-10-30 | Gte Products Corporation | Method of making cerium activated yttrium aluminate phosphor |
| IT1183061B (en) * | 1984-07-31 | 1987-10-05 | Zambon Spa | COMPOUNDS EQUIPPED WITH ANTI-ALLERGIC ACTIVITY |
| DE3804293A1 (en) * | 1988-02-12 | 1989-08-24 | Philips Patentverwaltung | ARRANGEMENT WITH AN ELECTROLUMINESCENCE OR LASER DIODE |
| DE9013615U1 (en) * | 1990-09-28 | 1990-12-06 | AEG Niederspannungstechnik GmbH & Co KG, 24534 Neumünster | Electroluminescence or laser diode |
| JPH04186679A (en) * | 1990-11-16 | 1992-07-03 | Daido Steel Co Ltd | light emitting diode |
| JP2666228B2 (en) * | 1991-10-30 | 1997-10-22 | 豊田合成株式会社 | Gallium nitride based compound semiconductor light emitting device |
| JPH05152609A (en) * | 1991-11-25 | 1993-06-18 | Nichia Chem Ind Ltd | Light emitting diode |
| US5379186A (en) * | 1993-07-06 | 1995-01-03 | Motorola, Inc. | Encapsulated electronic component having a heat diffusing layer |
| JPH0738150A (en) * | 1993-07-22 | 1995-02-07 | Toshiba Corp | Semiconductor light emitting device |
| JPH0799345A (en) * | 1993-09-28 | 1995-04-11 | Nichia Chem Ind Ltd | Light emitting diode |
| JPH07176794A (en) * | 1993-12-17 | 1995-07-14 | Nichia Chem Ind Ltd | Planar light source |
| CN2184257Y (en) * | 1994-02-21 | 1994-11-30 | 中国科学院半导体研究所 | Coupler for semi-conductor light emission and testing |
| JP3116727B2 (en) * | 1994-06-17 | 2000-12-11 | 日亜化学工業株式会社 | Planar light source |
| CN1108819A (en) * | 1994-10-26 | 1995-09-20 | 欧姆龙株式会社 | Semiconductor shining unit and optical device using semiconductor shining unit |
-
1996
- 1996-06-26 DE DE19625622A patent/DE19625622A1/en not_active Ceased
-
1997
- 1997-06-26 CN CNB2006101016572A patent/CN100502066C/en not_active Expired - Lifetime
- 1997-06-26 CN CNB2005100917295A patent/CN100442555C/en not_active Expired - Lifetime
- 1997-06-26 CN CNB2006101016500A patent/CN100435369C/en not_active Expired - Lifetime
- 1997-06-26 CN CN200610101860XA patent/CN1917240B/en not_active Expired - Lifetime
- 1997-06-26 CN CNB2006100999800A patent/CN100514684C/en not_active Expired - Lifetime
- 1997-06-26 CN CN200610101629.0A patent/CN1893136B/en not_active Expired - Lifetime
- 1997-06-26 CN CNB2005100917280A patent/CN100565945C/en not_active Expired - Lifetime
- 1997-06-26 CN CNB2005100917308A patent/CN100433382C/en not_active Expired - Lifetime
- 1997-06-26 CN CNB2006100999783A patent/CN100557833C/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI489055B (en) * | 2012-06-29 | 2015-06-21 | Advanced Optoelectronic Tech | LED light bar |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100514684C (en) | 2009-07-15 |
| CN1881637A (en) | 2006-12-20 |
| CN100565945C (en) | 2009-12-02 |
| CN1917240A (en) | 2007-02-21 |
| CN1893136B (en) | 2014-03-12 |
| CN100442555C (en) | 2008-12-10 |
| CN1905226A (en) | 2007-01-31 |
| CN1722486A (en) | 2006-01-18 |
| CN1917240B (en) | 2012-05-23 |
| CN1722485A (en) | 2006-01-18 |
| CN1913183A (en) | 2007-02-14 |
| CN1983651A (en) | 2007-06-20 |
| DE19625622A1 (en) | 1998-01-02 |
| CN100433382C (en) | 2008-11-12 |
| CN100435369C (en) | 2008-11-19 |
| CN1738067A (en) | 2006-02-22 |
| CN1893136A (en) | 2007-01-10 |
| CN100557833C (en) | 2009-11-04 |
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