CN100413938C - Au/CdSe heterostructure quantum dots and preparation method thereof - Google Patents
Au/CdSe heterostructure quantum dots and preparation method thereof Download PDFInfo
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Abstract
本发明Au/CdSe异质结构量子点及其制备方法,特征是用四辛基溴化氨的甲苯溶液萃取HAuCl4·4H2O水溶液,待水层无色后静置分层,将上层甲苯溶液洗涤后收集并加入十二烷基硫醇,搅拌至溶液变为无色,即为金源溶液;将CdSe量子点的甲苯溶液和金源溶液混合,搅拌至变棕色;将粗产物提纯,即得到平均粒径为2.0nm的Au颗粒和平均粒径为3.4nm的CdSe颗粒结合在一起形成的异质结构量子点;本发明实现了室温大气氛下Au/CdSe异质结构量子点的规模化制备;本发明的Au/CdSe异质结构量子点同时具有金属、半导体的光吸收特性及特殊的不对称结构,在纳米电子器件、光敏传感器和太阳能电池领域具有广阔的应用前景。Au/CdSe heterostructure quantum dots and the preparation method thereof in the present invention are characterized in that the HAuCl 4 ·4H 2 O aqueous solution is extracted with tetraoctyl ammonium bromide toluene solution, the water layer is colorless and left standing for stratification, and the upper layer of toluene After the solution is washed, collect and add dodecyl mercaptan, stir until the solution becomes colorless, which is the gold source solution; mix the toluene solution of CdSe quantum dots with the gold source solution, and stir until it turns brown; purify the crude product, That is, the heterostructure quantum dots formed by combining Au particles with an average particle diameter of 2.0nm and CdSe particles with an average particle diameter of 3.4nm; the present invention realizes the scale of Au/CdSe heterostructure quantum dots at room temperature chemical preparation; the Au/CdSe heterostructure quantum dots of the present invention have both metal and semiconductor light absorption properties and a special asymmetric structure, and have broad application prospects in the fields of nanoelectronic devices, photosensitive sensors and solar cells.
Description
技术领域: Technical field:
本发明属于量子点技术领域,特别涉及Au/CdSe异质结构量子点及其制备方法。The invention belongs to the technical field of quantum dots, in particular to Au/CdSe heterostructure quantum dots and a preparation method thereof.
背景技术: Background technique:
近年来,异质结构量子点的研究引起了越来越多研究者的兴趣,特别是对基于金属或者半导体材料的异质结构量子点的研究更加日新月异,原因在于,将两种功能型材料集于一身的纳米结构有着非常新颖的应用前景,其通常具备两种材料的复合特性以及相互耦合特性。金属量子点有着优异的电学性质,在纳米电子器件、电子转移催化等方面提供了开拓的应用视野;而半导体量子点有着优异的光学性质,在生物荧光标记、国防编码、光电器件方面有着深远的应用前景。例如,《美国化学会会志》(Journal of theAmerican Chemical Society 126.5664-5665,2004;Journal of the American Chemical Society127.10269-10275,2005)报道了基于II-VI族半导体硫化物材料的FePt/CdS以及Fe2O3/ZnS、CdS或HgS量子点的热合成制备技术,但制备过程需要严格的惰性气氛以及较高温度(280℃),使得实验不易进行且不能大规模制备产物。美国《纳米快报》(NanoLetters 5.379-382,2005)报道了基于金属Au的Fe3O4/Au量子点的热分解制备技术,其制备过程同样需要严格的惰性气氛以及较高温度(300℃),实验不易进行且不能大规模化。《美国化学会会志》(Journal of the American Chemical Society 127.34-35,2005)报道了基于金属Ag的FePt/Ag,Fe3O4/Ag以及Au/Ag异质结构量子点的制备技术,其制备过程不需要惰性气氛,可以在常温下进行,但仅仅适用基于金属Ag的异质结构量子点的范畴,不能扩展到更多的体系;由于其制备过程在胶束的相界面上完成,有限的相界面空间使得制备过程不易大规模化。In recent years, the research on heterostructure quantum dots has attracted more and more researchers' interest, especially the research on heterostructure quantum dots based on metal or semiconductor materials is changing rapidly, because the combination of two functional materials The all-in-one nanostructure has very novel application prospects, and it usually has the composite characteristics and mutual coupling characteristics of the two materials. Metal quantum dots have excellent electrical properties, providing a broad application horizon in nanoelectronic devices, electron transfer catalysis, etc.; semiconductor quantum dots have excellent optical properties, and have far-reaching applications in bioluminescence labeling, national defense coding, and optoelectronic devices. Application prospect. For example, "Journal of the American Chemical Society" (Journal of the American Chemical Society 126.5664-5665, 2004; Journal of the American Chemical Society 127.10269-10275, 2005) reported FePt/CdS and The thermal synthesis preparation technology of Fe 2 O 3 /ZnS, CdS or HgS quantum dots, but the preparation process requires a strict inert atmosphere and a high temperature (280°C), which makes it difficult to conduct experiments and cannot prepare products on a large scale. The United States "Nano Letters" (NanoLetters 5.379-382, 2005) reported the thermal decomposition preparation technology of Fe 3 O 4 /Au quantum dots based on metal Au. The preparation process also requires strict inert atmosphere and high temperature (300 ° C). , the experiment is not easy to carry out and cannot be scaled up. "Journal of the American Chemical Society" (Journal of the American Chemical Society 127.34-35, 2005) reported the preparation technology of FePt/Ag, Fe 3 O 4 /Ag and Au/Ag heterostructure quantum dots based on metal Ag, which The preparation process does not require an inert atmosphere and can be carried out at room temperature, but it is only applicable to the category of metal Ag-based heterostructure quantum dots and cannot be extended to more systems; because the preparation process is completed on the phase interface of micelles, limited The large phase interface space makes the preparation process difficult to scale up.
《美国化学会会志》(Journal of theAmerican ChemicalSociety 124.2049-2055,2002)和中国专利号ZL200310111494.2分别报道了油溶性CdSe量子点的制备技术,但其反应体系并没有涉及到异质结构量子点的制备,仅给出了尺寸可控的CdSe量子点的制备方案。《美国化学会会志》(Journal of theAmerican ChemicalSociety 125.12567-12575,2003)报道了油溶性CdSe/CdS核/壳型量子点,该报导包含两步过程,即第一步制备油溶性CdSe内核量子点,第二步基于CdSe量子点的基础上外延生长CdS外壳层;但由于其采用离子逐层吸附反应(Successive ion layer adsorption and reaction)的技术,使得在CdSe量子点表面外延生长CdS过程中只能得到各向均匀的核/壳型量子点,而不能得到异质结构型量子点。"Journal of the American Chemical Society 124.2049-2055, 2002" and Chinese Patent No. ZL200310111494.2 respectively reported the preparation technology of oil-soluble CdSe quantum dots, but the reaction system did not involve heterostructure quantum dots The preparation of CdSe quantum dots with controllable size is only given. "Journal of the American Chemical Society" (Journal of the American Chemical Society 125.12567-12575, 2003) reported oil-soluble CdSe/CdS core/shell quantum dots, the report includes a two-step process, the first step is to prepare oil-soluble CdSe core quantum dots , the second step is based on the CdSe quantum dots on the basis of epitaxial growth of CdS shell layer; but because of its use of ion layer adsorption reaction (Successive ion layer adsorption and reaction) technology, so that in the CdSe quantum dot surface epitaxial growth CdS process can only Isotropically uniform core/shell quantum dots are obtained, but heterogeneous structure quantum dots cannot be obtained.
到目前为止,尚未见文献报道在温和的条件下均相制备异质结构量子点的方法,特别是金属Au/半导体CdSe异质结构量子点的制备,主要是因为其二者有着严重的晶格失配(晶格失配达到50%),使得外延生长受到阻碍。So far, there has been no literature report on the homogeneous preparation of heterostructure quantum dots under mild conditions, especially the preparation of metal Au/semiconductor CdSe heterostructure quantum dots, mainly because the two have severe lattice Mismatch (lattice mismatch up to 50%) hinders epitaxial growth.
发明内容: Invention content:
本发明的目的是提供一种金属Au/半导体CdSe异质结构量子点及其制备方法,以克服现有异质结构制备技术中条件苛刻、反应不易控制、难以均相大规模制备的缺点,发展一种均相的、可大规模化的、条件温和易于操控的制备途径。The purpose of the present invention is to provide a metal Au/semiconductor CdSe heterostructure quantum dot and its preparation method, to overcome the shortcomings of harsh conditions, difficult reaction control, and difficulty in homogeneous large-scale preparation in the existing heterostructure preparation technology, and to develop A homogeneous, large-scale, mild and easy-to-manipulate preparation route.
本发明的Au/CdSe异质结构量子点的制备方法,其特征在于:在室温、空气气氛下,用0.8~1.2mmol/L的四辛基溴化氨的甲苯溶液萃取20~30mmol/L的HAuCl4·4H2O水溶液,该四辛基溴化氨的甲苯溶液/溶有HAuCl4·4H2O的水溶液的体积比为5/1~5/3;待水层无色后,静置至溶液分层,将上层鲜红色的甲苯溶液洗涤后收集;加入十二烷基硫醇,使其体积分数为0.7%~1%,搅拌至溶液变为无色,即为金源溶液;然后将颗粒浓度为1.0×10-3~1.5×10-3mmol/L的CdSe量子点的甲苯溶液和金源溶液按照8/1~12/1的体积比混合、搅拌,体系由亮红色迅速变为暗红色、最后逐渐变至棕色,即得到粗产物;将粗产物提纯,即得到Au/CdSe异质结构量子点。The preparation method of the Au/CdSe heterostructure quantum dots of the present invention is characterized in that: at room temperature and in an air atmosphere, 20 to 30 mmol/L of tetraoctyl ammonium bromide is extracted with a toluene solution of 0.8 to 1.2 mmol/L. HAuCl 4 4H 2 O aqueous solution, the volume ratio of the toluene solution of tetraoctylammonium bromide/the aqueous solution dissolved in HAuCl 4 4H 2 O is 5/1~5/3; after the water layer is colorless, let it stand When the solution is separated, wash and collect the bright red toluene solution in the upper layer; add dodecyl mercaptan to make its volume fraction 0.7% to 1%, and stir until the solution becomes colorless, which is the gold source solution; then Mix and stir the toluene solution of CdSe quantum dots with a particle concentration of 1.0×10 -3 to 1.5×10 -3 mmol/L and the gold source solution at a volume ratio of 8/1 to 12/1, and the system changes rapidly from bright red to It is dark red, and finally gradually changes to brown to obtain a crude product; the crude product is purified to obtain Au/CdSe heterostructure quantum dots.
可将该产物溶解在非极性溶剂中保存,所述非极性溶剂包括甲苯、氯仿或正己烷。The product can be stored dissolved in a non-polar solvent including toluene, chloroform or n-hexane.
本发明的Au/CdSe异质结构量子点,其特征在于:其中80%~90%为单个Au颗粒和单个CdSe颗粒结合在一起形成的哑铃状二聚体型异质结构量子点;10%~15%为两个Au颗粒和单个CdSe颗粒同时结合在一起形成的三聚体型异质结构量子点;其余为没有形成异质结构的孤立型前驱物CdSe量子点;其中Au颗粒的平均粒径为2nm,CdSe颗粒的平均粒径为3.4nm,颗粒尺寸标准方差<20.0%。The Au/CdSe heterostructure quantum dot of the present invention is characterized in that: 80% to 90% of it is a dumbbell-shaped dimer type heterostructure quantum dot formed by combining a single Au particle and a single CdSe particle; 10% to 15% % is a trimer-type heterostructure quantum dot formed by combining two Au particles and a single CdSe particle at the same time; the rest is an isolated precursor CdSe quantum dot without forming a heterostructure; the average particle size of the Au particles is 2nm , the average particle diameter of CdSe particles is 3.4nm, and the standard deviation of particle size is less than 20.0%.
本发明方法通过将金源溶液从水相萃取到油相进而形成了与油溶性CdSe量子点的均相体系,同时利用十二烷基硫醇的弱还原特性,将甲苯相金源溶液中的鲜红色三价金离子还原为更为活泼的无色的一价金离子,使得金源溶液在室温下便能在CdSe量子点表面自催化形成Au颗粒,进而制备出Au/CdSe异质结构量子点。本发明方法不同于现有技术中的高温、惰性气氛下的热合成和热分解方法,本发明中的金源溶液在CdSe量子点表面自催化形成异质结构量子点的过程中不需要惰性气氛的保护,在室温下即可进行,易于操作和控制;也不同于现有技术中的胶束相界面反应的制备技术,本发明方法的制备过程在同一个油相甲苯环境中完成,可以实现大规模化制备。同时,本发明方法由于采用了一价金在CdSe量子点表面自催化的制备路线,突破了现有技术不能适用于晶格失配达到50%的Au和CdSe体系的缺陷,实现了Au、CdSe材料在量子点体系中的异质链接,该体系至今尚未见文献报道。本发明的Au/CdSe异质结构量子点同时具有金属、半导体的光吸收特性,这种特性以及其特殊的不对称结构使其在纳米电子器件、光敏传感器和太阳能电池领域具有广阔的应用前景。The method of the present invention forms a homogeneous system with oil-soluble CdSe quantum dots by extracting the gold source solution from the water phase to the oil phase. The bright red trivalent gold ions are reduced to more active colorless monovalent gold ions, so that the gold source solution can self-catalyze the formation of Au particles on the surface of CdSe quantum dots at room temperature, and then prepare Au/CdSe heterostructure quantum dots. point. The method of the present invention is different from the thermal synthesis and thermal decomposition methods under high temperature and inert atmosphere in the prior art, and the gold source solution in the present invention does not require an inert atmosphere in the process of self-catalyzing the formation of heterostructure quantum dots on the surface of CdSe quantum dots The protection can be carried out at room temperature, easy to operate and control; also different from the preparation technology of micellar phase interface reaction in the prior art, the preparation process of the method of the present invention is completed in the same oil phase toluene environment, can realize Large-scale preparation. At the same time, because the method of the present invention adopts the self-catalyzed preparation route of monovalent gold on the surface of CdSe quantum dots, it breaks through the defect that the prior art cannot be applied to Au and CdSe systems whose lattice mismatch reaches 50%, and realizes Au, CdSe The heterogeneous linkage of materials in the quantum dot system has not been reported in the literature so far. The Au/CdSe heterostructure quantum dot of the present invention has both metal and semiconductor light absorption characteristics, and this characteristic and its special asymmetric structure make it have broad application prospects in the fields of nanoelectronic devices, photosensitive sensors and solar cells.
附图说明: Description of drawings:
图1是本发明实施例1产物Au/CdSe异质结构量子点的透射电子显微镜照片;Fig. 1 is the transmission electron micrograph of the product Au/CdSe heterostructure quantum dot of
图2是Au/CdSe异质结构量子点的颗粒形态统计图;Figure 2 is a statistical diagram of particle morphology of Au/CdSe heterostructure quantum dots;
图3是Au/CdSe异质结构量子点中Au颗粒的尺寸分布图;Figure 3 is a size distribution diagram of Au particles in Au/CdSe heterostructure quantum dots;
图4是Au/CdSe异质结构量子点中CdSe颗粒的尺寸分布图;Figure 4 is a size distribution diagram of CdSe particles in Au/CdSe heterostructure quantum dots;
图5是Au/CdSe异质结构量子点的高分辨透射电镜照片;Figure 5 is a high-resolution transmission electron microscope photo of Au/CdSe heterostructure quantum dots;
图6是Au/CdSe异质结构量子点的电子衍射照片;Figure 6 is an electron diffraction photo of Au/CdSe heterostructure quantum dots;
图7是Au/CdSe异质结构量子点的X射线能量散射谱图;Fig. 7 is the X-ray energy scattering spectrogram of Au/CdSe heterostructure quantum dot;
图8是Au/CdSe异质结构量子点的紫外-可见吸收光谱图。Fig. 8 is an ultraviolet-visible absorption spectrum diagram of Au/CdSe heterostructure quantum dots.
具体实施方式: Detailed ways:
实施例1:Example 1:
一、先制备平均粒径为3.4nm的油溶性CdSe量子点。1. Prepare oil-soluble CdSe quantum dots with an average particle size of 3.4 nm.
采用《美国化学会会志》(Journal of the American Chemical Society 125.12567-12575,2003)报导的方法(也可采用中国专利号ZL200310111494.2公开的方法)制备油溶性CdSe量子点,仅做该报导中的第一步制备油溶性CdSe内核量子点的步骤,而不做第二步的外延生长CdS壳层的步骤,具体步骤为:将2mmol的硒粉、0.472g的三正丁基膦(TBP)加入到1.37g的十八碳烯中,加热到100℃,待溶液变至无色后降温至室温,制得硒的储备液;0.2mmol的CdO、0.8mmol的硬脂酸和2g的十八碳烯混合放置于25ml的三口烧瓶中,加热到200℃,待溶液变至透明后降温至室温,加入1.5g的十八胺和0.5g的氧化三正辛基膦(TOPO),在惰性气氛下加热到280℃,在2秒内将硒的全部储备液注入,随后将反应体系在250℃保温30秒,停止加热并冷却到室温;在上述体系中加入6ml正己烷,120转/秒离心,弃去下层沉淀后,在溶液中加入8ml丙酮,静置10分钟使产物沉淀下来,120转/秒离心,舍弃上层清夜,沉淀用5ml甲苯溶解,再加入5ml甲醇混合均匀,120转/秒离心,再次舍弃上层清夜后,沉淀用85ml的甲苯溶解,即得到颗粒浓度为1.18×10-3mmol/L的CdSe量子点的甲苯溶液,密封、避光保存备用。The method reported in "Journal of the American Chemical Society 125.12567-12575, 2003" (the method disclosed in Chinese Patent No. ZL200310111494.2 can also be used) was used to prepare oil-soluble CdSe quantum dots, only for this report The first step of preparing the oil-soluble CdSe core quantum dot step, without doing the second step of the epitaxial growth CdS shell step, the specific steps are: 2mmol of selenium powder, 0.472g of tri-n-butylphosphine (TBP) Add it to 1.37g of octadecene, heat to 100°C, cool down to room temperature after the solution turns colorless, and prepare a stock solution of selenium; 0.2mmol of CdO, 0.8mmol of stearic acid and 2g of octadecene Carbene mixed and placed in a 25ml three-necked flask, heated to 200°C, cooled to room temperature after the solution became transparent, added 1.5g of octadecylamine and 0.5g of tri-n-octylphosphine oxide (TOPO), in an inert atmosphere Heating to 280°C under low temperature, inject all the stock solution of selenium within 2 seconds, then keep the reaction system at 250°C for 30 seconds, stop heating and cool to room temperature; add 6ml of n-hexane to the above system, and centrifuge at 120 rpm , after discarding the lower precipitate, add 8ml of acetone to the solution, let it stand for 10 minutes to precipitate the product, centrifuge at 120 rpm, discard the upper clear night, dissolve the precipitate with 5ml of toluene, then add 5ml of methanol to mix evenly, 120 rpm After centrifuging and discarding the supernatant, the precipitate was dissolved with 85ml of toluene to obtain a toluene solution of CdSe quantum dots with a particle concentration of 1.18×10 -3 mmol/L, which was sealed and kept away from light for future use.
二、制备Au/CdSe异质结构量子点。2. Preparation of Au/CdSe heterostructure quantum dots.
1、配置用于制备Au/CdSe异质结构量子点的金源溶液,步骤为:取24.5mmol/L的HAuCl4·4H2O水溶液8ml置于分液漏斗中,加入20ml含200mg四辛基溴化氨的甲苯溶液,该四辛基溴化氨的甲苯溶液/溶有HAuCl4·4H2O的水溶液的体积比为5/1~5/3;用力振摇萃取,待下层水溶液无色后,静置10分钟,至溶液分层,舍弃下层的水溶液;洗涤上层的甲苯溶液,即加入10ml去离子水并用力振荡3分钟,静置10分钟,至溶液分层,舍弃下层水溶液,如此反复3次;移出分液漏斗中鲜红色的甲苯溶液,取其10ml,加入80微升的十二烷基硫醇,磁力搅拌10分钟,溶液逐渐变为无色,即得到金源溶液。该步骤中的四辛基溴化氨的甲苯溶液浓度可以分布在0.8~1.2mmol/L,HAuCl4·4H2O水溶液浓度可以分布在20~30mmol/L,十二烷基硫醇可以分布在70~100微升,均可制备出无色的金源溶液。1. Configure the gold source solution for preparing Au/CdSe heterostructure quantum dots. The steps are: take 8ml of 24.5mmol/L HAuCl 4 4H 2 O aqueous solution and place it in a separatory funnel, add 20ml containing 200mg tetraoctyl The toluene solution of ammonium bromide, the volume ratio of the toluene solution of tetraoctyl ammonium bromide/the aqueous solution dissolved in HAuCl 4 4H 2 O is 5/1~5/3; shake vigorously to extract, and the lower aqueous solution is colorless After that, let it stand for 10 minutes until the solution is separated, discard the aqueous solution of the lower layer; wash the toluene solution of the upper layer, that is, add 10ml deionized water and vibrate vigorously for 3 minutes, and let it stand for 10 minutes until the solution is separated, discard the aqueous solution of the lower layer, so Repeat 3 times; remove the bright red toluene solution in the separatory funnel, take 10ml of it, add 80 microliters of dodecyl mercaptan, and magnetically stir for 10 minutes, the solution gradually becomes colorless, and the gold source solution is obtained. The concentration of the toluene solution of tetraoctylammonium bromide in this step can be distributed in 0.8~1.2mmol/L, the concentration of HAuCl 4 ·4H 2 O aqueous solution can be distributed in 20~30mmol/L, and dodecyl mercaptan can be distributed in 70-100 microliters can prepare a colorless gold source solution.
2、制备Au/CdSe异质结构量子点,步骤为:取5ml颗粒浓度为1.18×10-3mmol/L的CdSe量子点的甲苯溶液置于容积为25ml的圆底烧瓶中,磁力搅拌下加入0.5ml金源溶液,反应体系由鲜红色迅速转为暗红色,搅拌10~20分钟后逐渐变至棕色,提纯。该步骤中,CdSe量子点的颗粒浓度可以分布在1.0×10-3~1.5×10-3mmol/L,CdSe量子点和金源溶液的体积比可以分布在8/1~12/1,均可制备出Au/CdSe异质结构量子点。2. To prepare Au/CdSe heterostructure quantum dots, the steps are: take 5ml of the toluene solution of CdSe quantum dots with a particle concentration of 1.18×10 -3 mmol/L, put them in a 25ml round bottom flask, and add 0.5ml gold source solution, the reaction system turns from bright red to dark red rapidly, and gradually turns to brown after stirring for 10-20 minutes, and is purified. In this step, the particle concentration of CdSe quantum dots can be distributed in the range of 1.0×10 -3 to 1.5×10 -3 mmol/L, and the volume ratio of CdSe quantum dots and gold source solution can be distributed in the range of 8/1 to 12/1, which means Au/CdSe heterostructure quantum dots can be prepared.
3、提纯步骤为:粗产物加入6ml甲醇,溶液出现混浊,在120转/秒下离心10分钟,舍弃上层清夜;沉淀再用5ml甲苯溶解,加入5ml甲醇在120转/秒下离心,舍弃上层清夜,沉淀即为产物,可将其溶解于甲苯、氯仿或正己烷等非极性溶剂中保存。3. The purification steps are: add 6ml of methanol to the crude product, the solution is turbid, centrifuge at 120 rpm for 10 minutes, discard the upper clear night; dissolve the precipitate with 5ml of toluene, add 5ml of methanol and centrifuge at 120 rpm, discard the upper layer After clearing the night, the precipitate is the product, which can be dissolved in non-polar solvents such as toluene, chloroform or n-hexane for preservation.
三、对Au/CdSe异质结构量子点进行分析:3. Analysis of Au/CdSe heterostructure quantum dots:
图1为Au/CdSe异质结构量子点的透射电镜照片,图中颜色较深的颗粒为Au颗粒,颜色较浅的颗粒为CdSe颗粒,可见Au颗粒和CdSe颗粒已经结合在一起形成结构不对称的Au/CdSe异质结构量子点,且呈现均匀的单分散状态;图2为Au/CdSe异质结构量子点的颗粒类型统计图,图中显示产物中有84.6%的颗粒形成了一个CdSe颗粒和一个Au颗粒耦连的哑铃状二聚体型异质结构量子点,另有12.1%的颗粒形成了一个CdSe颗粒和两个Au颗粒同时耦连的三聚体型异质结构量子点,仅有3.3%的颗粒仍然保持着最初的孤立型CdSe量子点形态;经过许多次实验结果的统计发现,其中哑铃型二聚体异质结构量子点的比例都分布在80%~90%,三聚体的异质结构量子点的比例都分布在10%~15%,其余为没有形成异质结构的孤立型前驱物CdSe量子点;异质结构量子点的高产率说明本发明的制备方法是非常有效的;图3为Au/CdSe异质结构量子点中Au颗粒的尺寸分布统计图,图中可见Au颗粒平均尺寸为2.0nm;图4为Au/CdSe异质结构量子点中CdSe颗粒的尺寸分布统计图,图中可见CdSe颗粒平均尺寸为3.4nm;图3和图4的统计分布中,颗粒尺寸标准方差<20.0%;图5为Au/CdSe异质结构量子点的高分辨电镜照片,图中清晰可见异质结构量子点中Au颗粒部分和CdSe颗粒部分的晶格条纹像;图6为Au/CdSe异质结构量子点的电子衍射图,图中可见除了六角密堆结构的硒化镉的(002)、(110)、(112)和(213)4个晶面的衍射环外,还清晰可见面心立方结构(fcc)的金的(111)和(220)面;图7为Au/CdSe异质结构量子点的X射线能量散射谱图,图中同时出现了Cd元素、Se元素和Au元素的信号,定量分析的结果是Cd∶Se∶Au为34∶34∶32;图8为Au/CdSe异质结构量子点的紫外-可见吸收光谱图,图中大于650nm的长波段区域呈现出了Au的连续吸收特性,在585nm附近的吸收峰没有CdSe量子点敏锐,是由于异质结构量子点中Au颗粒和CdSe颗粒耦合的结果,在小于500nm的短波长区域呈现出的强吸收来源于Au颗粒和CdSe颗粒的共同贡献。综上可知,Au/CdSe异质结构量子点在结构上体现了特殊的不对称形态,在紫外-可见吸收谱上体现了Au、CdSe的耦合特性。Figure 1 is a transmission electron microscope photo of Au/CdSe heterostructure quantum dots. The darker particles in the figure are Au particles, and the lighter particles are CdSe particles. It can be seen that the Au particles and CdSe particles have been combined to form structural asymmetry. Au/CdSe heterostructure quantum dots, and presents a uniform monodisperse state; Figure 2 is the particle type statistical diagram of Au/CdSe heterostructure quantum dots, the figure shows that 84.6% of the particles in the product form a CdSe particle Dumbbell-shaped dimer-type heterostructure quantum dots coupled with an Au particle, another 12.1% of the particles formed a trimer-type heterostructure quantum dots coupled with a CdSe particle and two Au particles at the same time, only 3.3 % of the particles still maintain the original isolated CdSe quantum dot shape; after many experiments, it is found that the proportion of dumbbell-shaped dimer heterostructure quantum dots is distributed between 80% and 90%, and the proportion of trimer The proportion of heterostructure quantum dots is distributed between 10% and 15%, and the rest are isolated precursor CdSe quantum dots that do not form heterostructure; the high yield of heterostructure quantum dots shows that the preparation method of the present invention is very effective ; Fig. 3 is the statistical diagram of size distribution of Au particles in Au/CdSe heterostructure quantum dots, the average size of visible Au particles in the figure is 2.0nm; Fig. 4 is the size distribution statistics of CdSe particles in Au/CdSe heterostructure quantum dots The figure shows that the average size of CdSe particles is 3.4nm; in the statistical distribution of Figures 3 and 4, the standard deviation of particle size is <20.0%; Figure 5 is a high-resolution electron microscope photo of Au/CdSe heterostructure quantum dots, in the The lattice fringe images of the Au particle part and the CdSe particle part in the heterostructure quantum dots are clearly visible; Figure 6 is the electron diffraction pattern of the Au/CdSe heterostructure quantum dots, except for the hexagonal close-packed structure of cadmium selenide. In addition to the diffraction rings of the four crystal planes (002), (110), (112) and (213), the (111) and (220) planes of gold with a face-centered cubic structure (fcc) can also be clearly seen; Figure 7 shows the X-ray energy scattering spectrum of /CdSe heterostructure quantum dots, the signal of Cd element, Se element and Au element appears in the figure at the same time, the result of quantitative analysis is that Cd:Se:Au is 34:34:32; Figure 8 It is the ultraviolet-visible absorption spectrum diagram of Au/CdSe heterostructure quantum dots. The long-wavelength region larger than 650nm in the figure shows the continuous absorption characteristics of Au. The absorption peak near 585nm is not as sharp as that of CdSe quantum dots. It is due to the heterogeneity As a result of the coupling of Au particles and CdSe particles in the structural quantum dots, the strong absorption in the short wavelength region of less than 500nm comes from the joint contribution of Au particles and CdSe particles. In summary, the Au/CdSe heterostructure quantum dots have a special asymmetric shape in the structure, and the coupling characteristics of Au and CdSe in the ultraviolet-visible absorption spectrum.
本发明在均相、常温、空气气氛的温和条件下,高效率地制备出了Au/CdSe异质结构量子点,克服了Au、CdSe之间的晶格失配,实现了现有技术中无法完成的Au和CdSe的异质结构量子点的外延生长,提供了一种可大规模制备异质结构量子点的途径。本发明产物Au/CdSe异质结构量子点具有特殊的不对称结构,以及金属、半导体的光吸收耦合特性,在纳米电子器件、光敏传感器和太阳能电池领域具有广阔的应用前景。The present invention efficiently prepares Au/CdSe heterostructure quantum dots under the mild conditions of homogeneous phase, normal temperature and air atmosphere, overcomes the lattice mismatch between Au and CdSe, and achieves The completed epitaxial growth of Au and CdSe heterostructure quantum dots provides a way to prepare heterostructure quantum dots on a large scale. The Au/CdSe heterostructure quantum dots produced by the invention have a special asymmetric structure and light absorption and coupling properties of metals and semiconductors, and have broad application prospects in the fields of nanoelectronic devices, photosensitive sensors and solar cells.
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| CN102071209B (en) * | 2010-12-06 | 2013-03-27 | 王深明 | Nanometer gene transfer material |
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| CN104437549B (en) * | 2014-11-20 | 2017-01-04 | 北京理工大学 | A kind of preparation method of efficient photocatalytic water composite catalyst |
| CN104882542B (en) * | 2015-05-28 | 2017-06-06 | 福州大学 | It is a kind of based on metal/have the preparation method of the casing nuclear quantum dot light-operated thin film transistor (TFT) of semiconductor-quantum-point composite construction |
| CN105655136B (en) * | 2015-12-28 | 2018-03-09 | 华侨大学 | A kind of preparation method of quantum dot sensitized solar cell to electrode |
| CN105505373A (en) * | 2015-12-28 | 2016-04-20 | Tcl集团股份有限公司 | Luminous Janus colloid and manufacturing method thereof |
| CN110479319B (en) * | 2019-08-14 | 2022-05-03 | 武汉工程大学 | Au/CuSe tangential heterogeneous nano material and preparation method thereof |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000054340A1 (en) * | 1999-03-11 | 2000-09-14 | Imperial College Of Science, Technology And Medicine | Radiation concentrator for a photovoltaic device |
| US6501091B1 (en) * | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
| WO2003012006A1 (en) * | 2001-07-30 | 2003-02-13 | The Board Of Trustees Of The University Of Arkansas | Colloidal nanocrystals with high photoluminescence quantum yields and methods of preparing the same |
| CN1403379A (en) * | 2002-10-10 | 2003-03-19 | 武汉大学 | Prepn of CdSe/CdS or CdSe/ZnS core-shell quantum dot |
| CN1547238A (en) * | 2003-12-02 | 2004-11-17 | 武汉大学 | Preparation method of CdSe quantum dots |
| US20050045867A1 (en) * | 2002-10-30 | 2005-03-03 | Ozkan Cengiz S. | Nanoscale heterojunctions and methods of making and using thereof |
| CN1624069A (en) * | 2004-06-22 | 2005-06-08 | 武汉大学 | A method for water-solubilization of oil-soluble quantum dots |
| CN1693208A (en) * | 2005-04-28 | 2005-11-09 | 复旦大学 | Preparation method of water-soluble CdSe/CdS core/shell quantum dots |
| CN1789372A (en) * | 2005-12-28 | 2006-06-21 | 武汉大学 | Method for preparing CdSe quantum |
-
2006
- 2006-07-07 CN CNB2006100863618A patent/CN100413938C/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6501091B1 (en) * | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
| WO2000054340A1 (en) * | 1999-03-11 | 2000-09-14 | Imperial College Of Science, Technology And Medicine | Radiation concentrator for a photovoltaic device |
| WO2003012006A1 (en) * | 2001-07-30 | 2003-02-13 | The Board Of Trustees Of The University Of Arkansas | Colloidal nanocrystals with high photoluminescence quantum yields and methods of preparing the same |
| CN1403379A (en) * | 2002-10-10 | 2003-03-19 | 武汉大学 | Prepn of CdSe/CdS or CdSe/ZnS core-shell quantum dot |
| US20050045867A1 (en) * | 2002-10-30 | 2005-03-03 | Ozkan Cengiz S. | Nanoscale heterojunctions and methods of making and using thereof |
| CN1547238A (en) * | 2003-12-02 | 2004-11-17 | 武汉大学 | Preparation method of CdSe quantum dots |
| CN1624069A (en) * | 2004-06-22 | 2005-06-08 | 武汉大学 | A method for water-solubilization of oil-soluble quantum dots |
| CN1693208A (en) * | 2005-04-28 | 2005-11-09 | 复旦大学 | Preparation method of water-soluble CdSe/CdS core/shell quantum dots |
| CN1789372A (en) * | 2005-12-28 | 2006-06-21 | 武汉大学 | Method for preparing CdSe quantum |
Non-Patent Citations (5)
| Title |
|---|
| Encapsulation of CdSe/ZnSe Quantum Dots by LiposomeComplexes. SHAN, GUI-YE, et al.Chinese Journal of Chemistry,Vol.23 . 2005 * |
| Synthesis and Characterization of a 1:6 Au-CdSeNanocomposite. Scott L, et al.Chemistry of Materials,Vol.15 . 2003 * |
| Synthesis and Characterization of Au/Bi Core/ShellNanocrystals: Aprecursor toward Ⅱ-ⅣNanowires. James w, et al.The Journal of Physical Chemistry B,No.108. 2004 * |
| Synthesis of Core/Shell Nanoparticles of Au/CdSe via Au-CdBialloy Precursor. wei Lu, et al.Langmuir,Vol.21 . 2005 * |
| 硒化镉发光量子点的制备及其在有机发光器件中的应用. 刘弘伟.发光学报,第26卷第3期. 2005 * |
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