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CN100412934C - Active matrix display device and driving method thereof - Google Patents

Active matrix display device and driving method thereof Download PDF

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CN100412934C
CN100412934C CNB2004800027259A CN200480002725A CN100412934C CN 100412934 C CN100412934 C CN 100412934C CN B2004800027259 A CNB2004800027259 A CN B2004800027259A CN 200480002725 A CN200480002725 A CN 200480002725A CN 100412934 C CN100412934 C CN 100412934C
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transistor
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drive transistor
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CN1742309A (en
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J·R·赫克托尔
M·J·蔡尔兹
D·A·费什
M·T·约翰逊
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Koninklijke Philips NV
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Abstract

一种有源矩阵显示装置使用非晶硅驱动晶体管来驱动电流流过LED显示元件。第一和第二电容串联连接在驱动晶体管的栅极与源极之间,输入到像素的数据被提供给第一与第二电容间的结点。将第二电容充电到像素数据电压,并将驱动晶体管阈值电压存储到第一电容上。该像素安排允许将阈值电压存储到第一电容上,并且在每次寻址像素时都可以进行这种存储操作,从而补偿与老化有关的阈值电压改变。

Figure 200480002725

An active matrix display device uses amorphous silicon drive transistors to drive current through the LED display elements. The first and second capacitors are connected in series between the gate and the source of the driving transistor, and data input to the pixel is provided to a node between the first and second capacitors. The second capacitor is charged to the pixel data voltage, and the threshold voltage of the driving transistor is stored on the first capacitor. This pixel arrangement allows the threshold voltage to be stored on the first capacitor, and this storage can be done each time the pixel is addressed, thereby compensating for age-related changes in the threshold voltage.

Figure 200480002725

Description

有源矩阵显示装置及其驱动方法 Active matrix display device and driving method thereof

本发明涉及有源矩阵显示装置,特别(但非排他性地)涉及具有与每个像素相关的薄膜开关晶体管的有源矩阵电致发光显示装置。The present invention relates to active matrix display devices, in particular (but not exclusively) to active matrix electroluminescent display devices having a thin film switching transistor associated with each pixel.

采用电致发光、发光显示元件的矩阵显示装置是众所周知的。显示元件可包括例如使用聚合物材料的有机薄膜电致发光元件,或者使用传统的III-V半导体化合物的发光二极管(LED)。最近在有机电致发光材料、特别是聚合物材料中的发展表明,它们实际可用于视频显示装置。这些材料一般包括夹在一对电极之间的一层或多层半导体共轭聚合物,其中一个电极是透明的,另一电极具有适于将空穴或电子注入聚合物层中的材料。Matrix display devices employing electroluminescent, light-emitting display elements are well known. The display elements may comprise, for example, organic thin film electroluminescent elements using polymer materials, or light emitting diodes (LEDs) using conventional III-V semiconductor compounds. Recent developments in organic electroluminescent materials, especially polymeric materials, have shown that they can actually be used in video display devices. These materials typically include one or more layers of semiconducting conjugated polymers sandwiched between a pair of electrodes, one of which is transparent and the other has a material suitable for injecting holes or electrons into the polymer layer.

可利用CVD处理或者简单地通过使用可溶共轭聚合物溶液的旋涂技术来制造聚合物材料。还可以使用喷墨印刷。有机电致发光材料显示出类似二极管的I-V属性,从而能同时提供显示功能和开关功能,并且可用在无源型显示器中。或者,这些材料可用于有源矩阵显示装置,其中每个像素包括一个显示元件和一个用于控制通过该显示元件的电流的开关装置。Polymer materials can be fabricated using CVD processing or simply by spin-coating techniques using solutions of soluble conjugated polymers. Inkjet printing can also be used. Organic electroluminescent materials exhibit diode-like I-V properties, thereby providing both display and switching functions, and can be used in passive type displays. Alternatively, these materials may be used in active matrix display devices in which each pixel includes a display element and a switching means for controlling the current flow through the display element.

这类显示装置具有电流驱动的显示元件,从而常规的模拟驱动方案包括向显示元件提供可控电流。已知提供一个电流源晶体管作为像素结构的一部分,被提供给电流源晶体管的栅极电压确定流过显示元件的电流。在寻址阶段之后,存储电容保持该栅极电压。Such display devices have current driven display elements such that conventional analog drive schemes involve supplying controllable currents to the display elements. It is known to provide a current source transistor as part of the pixel structure, the gate voltage supplied to the current source transistor determining the current flowing through the display element. After the addressing phase, the storage capacitor maintains this gate voltage.

图1表示用于有源矩阵寻址的电致发光显示装置的一种已知的像素电路。该显示装置包括具有方块1所示的均匀间隔的像素的行和列矩阵阵列的面板,其中像素包括位于相交的行(选择)地址导线组4与列(数据)地址导线组6之间的交点处的电致发光显示元件2以及相关的开关装置。为了简单,图中仅示出少数几个像素。实际上,可以有数百个像素行和列。由包括与各导线组的端部相连的行扫描驱动器电路8和列数据驱动器电路9的外围驱动电路通过行和列地址导线组来寻址像素1。Figure 1 shows a known pixel circuit for an active matrix addressed electroluminescent display device. The display device comprises a panel having a matrix array of rows and columns of uniformly spaced pixels shown in block 1, wherein the pixels comprise intersections between intersecting sets of row (select) address conductors 4 and sets of column (data) address conductors 6 The electroluminescent display element 2 and the associated switching device. For simplicity, only a few pixels are shown in the figure. In fact, there can be hundreds of pixel rows and columns. The pixels 1 are addressed via the row and column address conductor sets by a peripheral driver circuit comprising a row scan driver circuit 8 and a column data driver circuit 9 connected to the ends of the respective conductor sets.

电致发光显示元件2包括在此表示为二极管元件(LED)并包括一对电极的有机发光二极管,在该对电极之间夹有一个或多个有机电致发光材料有源层。所述阵列的显示元件与相关的有源矩阵电路一起装在绝缘载体的一侧上。显示元件的阴极或阳极由透明导电材料形成。该载体为诸如玻璃之类的透明材料,显示元件2的最靠近基板的电极可以由诸如ITO之类的透明导电材料构成,从而由电致发光层产生的光透射过这些电极和载体,以便可由处于载体另一侧处的观看者观看到。通常,有机电致发光材料层的厚度处于100nm与200nm之间。可用于元件2的适当的有机电致发光材料的典型例子是公知的,并且在EP-A-0717446中已有描述。还可以使用如WO96/36959中所描述的共轭聚合物材料。The electroluminescent display element 2 comprises an organic light emitting diode, denoted here as a diode element (LED), and comprising a pair of electrodes between which one or more active layers of organic electroluminescent material are sandwiched. The display elements of the array are mounted on one side of an insulating carrier together with associated active matrix circuitry. The cathode or anode of the display element is formed of a transparent conductive material. The carrier is a transparent material such as glass, and the electrode closest to the substrate of the display element 2 can be made of a transparent conductive material such as ITO, so that the light generated by the electroluminescent layer is transmitted through these electrodes and the carrier, so that it can be obtained by A viewer at the other side of the carrier sees it. Typically, the thickness of the organic electroluminescent material layer is between 100 nm and 200 nm. Typical examples of suitable organic electroluminescent materials that can be used for element 2 are known and described in EP-A-0717446. Conjugated polymer materials as described in WO96/36959 may also be used.

图2以一种简化的示意形式表示出已知像素和用于提供电压编程操作的驱动电路安排。每个像素1包括EL显示元件2及相关的驱动器电路。该驱动器电路具有地址晶体管16,该地址晶体管16通过行导线4上的行地址脉冲而被导通。当地址晶体管16被导通时,列导线6上的电压可传递到像素的其余部分。特别是,地址晶体管16将列导线电压提供给电流源20,该电流源20包括驱动晶体管22和存储电容24。列电压被提供给驱动晶体管22的栅极,即便在行地址脉冲结束之后,仍由存储电容24将栅极保持在该电压。驱动晶体管22从电源线26吸取电流。Figure 2 shows in a simplified schematic form a known pixel and driver circuit arrangement for providing voltage programming operations. Each pixel 1 comprises an EL display element 2 and associated driver circuitry. The driver circuit has an address transistor 16 which is switched on by a row address pulse on the row conductor 4 . When address transistor 16 is turned on, the voltage on column conductor 6 can be passed to the rest of the pixel. In particular, address transistor 16 supplies the column conductor voltage to current source 20 , which includes drive transistor 22 and storage capacitor 24 . The column voltage is supplied to the gate of the drive transistor 22, and the gate is held at this voltage by the storage capacitor 24 even after the end of the row address pulse. Drive transistor 22 draws current from power supply line 26 .

迄今为止,用于LED显示器的大多数有源矩阵电路使用的是低温多晶硅(LTPS)TFT。这些装置的阈值电压在时间上是稳定的,不过从一个像素到另一像素按照随机的方式改变。这就在图像中产生不能接收的静态噪声。为了克服该问题,已经提出了多种电路。在一个例子中,在每次寻址像素时,像素电路测量提供电流的TFT的阈值电压,以克服这种从像素到像素的改变。这类电路针对的是LTPS TFT,并使用p型装置。不能用氢化非晶硅(a-Si:H)装置来制造这类电路,所述装置当前限于n型装置。To date, most active-matrix circuits for LED displays use low-temperature polysilicon (LTPS) TFTs. The threshold voltage of these devices is stable in time, but varies in a random fashion from one pixel to another. This produces unacceptable static noise in the image. In order to overcome this problem, various circuits have been proposed. In one example, each time a pixel is addressed, the pixel circuitry measures the threshold voltage of the TFT supplying the current to overcome this pixel-to-pixel variation. Such circuits target LTPS TFTs and use p-type devices. Such circuits cannot be fabricated with hydrogenated amorphous silicon (a-Si:H) devices, which are currently limited to n-type devices.

不过,已经考虑使用a-Si:H。至少在基板上的较短范围上,非晶硅晶体管中阈值电压的改变较小,不过阈值电压对于电压应力非常敏感。施加高于驱动晶体管所需阈值的高电压,导致阈值电压的较大改变,所述改变取决于所显示图像的信息内容。从而一直导通与非一直导通的非晶硅晶体管的阈值电压之间存在较大差异。在利用非晶硅晶体管驱动的LED显示器中,这种有差异的老化是一个严重的问题。However, a-Si:H has been considered. The change in threshold voltage in amorphous silicon transistors is smaller, at least over a short range across the substrate, although threshold voltage is very sensitive to voltage stress. Applying a high voltage above the threshold required to drive the transistor results in a large change in threshold voltage, which depends on the information content of the displayed image. Therefore, there is a large difference between the threshold voltages of always-on and non-always-on amorphous silicon transistors. This differential aging is a serious problem in LED displays driven by amorphous silicon transistors.

通常,所提出的使用a-Si:H TFT的电路使用电流寻址,而不使用电压寻址。当然,还认识到电流编程的像素可减小或消除基板上的晶体管变化带来的影响。例如,电流编程的像素可使用电流反射镜来对采样晶体管上的栅极源电压进行采样,其中通过采样晶体管驱动所需的像素驱动电流。使用采样的栅极源电压来寻址驱动晶体管。这在一部分上减轻了装置的不均匀性的问题,因为采样晶体管与驱动晶体管在基板上是彼此相邻的,并且彼此能更精确地匹配。另一种电流采样电路使用相同的晶体管进行采样和驱动,从而不需要晶体管匹配,不过需要附加的晶体管和地址线。Typically, the proposed circuits using a-Si:HTFTs use current addressing instead of voltage addressing. Of course, it is also recognized that current programmed pixels can reduce or eliminate the effects of transistor variations on the substrate. For example, a current programmed pixel may use a current mirror to sample the gate-source voltage on a sampling transistor through which the desired pixel drive current is driven. The drive transistor is addressed using the sampled gate-source voltage. This alleviates in part the problem of non-uniformity of the device, since the sampling transistor and the driving transistor are adjacent to each other on the substrate and can be more precisely matched to each other. Another current-sensing circuit uses the same transistors for sampling and driving, eliminating the need for transistor matching, but requiring additional transistors and address lines.

驱动常规LED装置所需的电流十分大,这意味着非晶硅难以用于有源矩阵有机LED显示器。近来,通过使用磷光,OLED和经过溶液处理(solution-processed)的OLED已经显示出极高的效率。参照S.R.Forrest等人的文章“Electrophosphorescent Organic Light EmittingDevices(电致发光有机发光装置)”(52.1 SID 02 Digest,2002年5月,第1357页),和J.P.J.Markham的文章“Highly Efficient SolutionProcessible Dendrimer LED(高效的溶液可处理枝状聚合物LED)”(L-8 SID 02 Digest,2002年5月,第1032页)。从而,这些装置所需的电流处于a-Si TFT可达到的范围之内。不过,其它问题也开始表现出来。The high current required to drive conventional LED devices means that amorphous silicon is difficult to use in active-matrix organic LED displays. Recently, OLEDs and solution-processed OLEDs have shown extremely high efficiencies by using phosphorescence. With reference to the article "Electrophosphorescent Organic Light Emitting Devices (Electroluminescent Organic Light Emitting Devices)" by S.R.Forrest et al. (52.1 SID 02 Digest, May 2002, p. 1357), and the article "Highly Efficient Solution Processible Dendrimer LEDs" by J.P.J.Markham solution can handle dendrimer LEDs)" (L-8 SID 02 Digest, May 2002, p. 1032). Thus, the currents required by these devices are within the reach of a-Si TFTs. However, other problems are beginning to manifest themselves.

磷光有机LED所需的极小电流导致对于大显示器而言列充电时间太长。另一个问题是TFT的阈值电压的稳定性(而非绝对值)。在恒定偏压下,TFT的阈值电压增大,从而简单的恒流电路将在短时间后停止操作。The extremely small current required for phosphorescent organic LEDs results in column charging times that are too long for large displays. Another problem is the stability (rather than the absolute value) of the threshold voltage of the TFT. Under constant bias, the threshold voltage of the TFT increases so that a simple constant current circuit will stop operating after a short time.

因此,在实现适于与具有非晶硅TFT的像素一起使用(甚至用于磷光LED显示器)的寻址方案时仍然存在困难。Difficulties therefore remain in implementing an addressing scheme suitable for use with pixels having amorphous silicon TFTs, even for phosphorescent LED displays.

根据本发明,提供一种包括显示像素阵列的有源矩阵显示装置,每个像素包括:According to the present invention, there is provided an active matrix display device comprising an array of display pixels, each pixel comprising:

电流驱动的发光显示元件;Current-driven light-emitting display elements;

用于驱动电流流过该显示元件的非晶硅驱动晶体管;an amorphous silicon drive transistor for driving current through the display element;

串联连接在驱动晶体管的栅极与源极或漏极之间的第一和第二电容,输入该像素的数据被提供给第一与第二电容之间的结点,从而将第二电容充电到从像素数据电压得出的电压,并且从驱动晶体管阈值电压得出的电压被存储到第一电容上。The first and second capacitors are connected in series between the gate and the source or drain of the drive transistor, and the data input to the pixel is supplied to the junction between the first and second capacitors, thereby charging the second capacitor to a voltage derived from the pixel data voltage, and a voltage derived from the drive transistor threshold voltage is stored on the first capacitor.

该像素安排可将阈值电压存储到第一电容上,并且可在每次寻址像素时进行存储,从而补偿与老化有关的阈值电压改变。因此,提供能每帧时间测量一次提供电流的TFT的阈值电压的非晶硅电路,以补偿老化效应。The pixel arrangement can store the threshold voltage onto the first capacitor, and can do so each time the pixel is addressed, thereby compensating for age-related threshold voltage changes. Therefore, an amorphous silicon circuit is provided that measures the threshold voltage of the TFT supplying the current every frame time to compensate for aging effects.

特别是,本发明的像素布局能克服非晶硅TFT的阈值电压增大,同时对于大的高分辨率AMOLED显示器而言能够在足够短的时间内对像素进行电压编程。In particular, the pixel layout of the present invention can overcome the increased threshold voltage of amorphous silicon TFTs while enabling voltage programming of the pixels in a sufficiently short time for large high resolution AMOLED displays.

每个像素还可以包括一个连接在输入数据线与第一和第二电容间的结点之间的输入第一晶体管。该第一晶体管对将数据电压施加给像素进行定时,以用于将数据电压存储到第二电容上。Each pixel may also include an input first transistor connected between the input data line and a junction between the first and second capacitors. The first transistor times the application of the data voltage to the pixel for storing the data voltage on the second capacitor.

每个像素还可以包括一个连接在驱动晶体管的栅极与漏极之间的第二晶体管。这是用来控制将电流从漏极(可与电源线连接)提供到第一晶体管。从而,通过将第二晶体管导通,可将第一电容充电到栅极-源极电压。可由在一个像素行之间共享的第一栅极控制线来控制第二晶体管。Each pixel may also include a second transistor connected between the gate and drain of the drive transistor. This is used to control the supply of current from the drain (which may be connected to the supply line) to the first transistor. Thus, by turning on the second transistor, the first capacitor can be charged to the gate-source voltage. The second transistor may be controlled by a first gate control line shared between one pixel row.

在一个示例中,第一和第二电容串联连接在驱动晶体管的栅极与源极之间。然后,第三晶体管连接在第二电容的两端,并受在一个像素行之间共享的第三栅极控制线的控制。第二和第三栅极控制线包括单个共享的控制线。In one example, the first and second capacitors are connected in series between the gate and the source of the driving transistor. Then, the third transistor is connected to both ends of the second capacitor, and is controlled by a third gate control line shared among one pixel row. The second and third gate control lines comprise a single shared control line.

或者,第一和第二电容可串联连接在驱动晶体管的栅极与漏极之间。然后,第三晶体管连接在输入端与驱动晶体管的源极之间。可由在一个像素行之间共享的第三栅极控制线来控制该第三晶体管。同样,第二和第三栅极控制线可包括单个共享的控制线。Alternatively, the first and second capacitors may be connected in series between the gate and drain of the driving transistor. Then, a third transistor is connected between the input terminal and the source of the driving transistor. The third transistor may be controlled by a third gate control line shared between one pixel row. Likewise, the second and third gate control lines may comprise a single shared control line.

在每种情况下都使用第三晶体管来短路第二电容,从而仅第一电容能存储驱动晶体管的栅极-源极电压。The third transistor is used in each case to short-circuit the second capacitor so that only the first capacitor can store the gate-source voltage of the drive transistor.

每个像素还可以包括连接在驱动晶体管源极与地电势线之间的第四晶体管。这是用来充当驱动晶体管的电流漏,特别是在像素编程序列期间不照射显示元件。也可以由在一个像素行之间共享的第四栅极控制线来控制第四晶体管。在一个像素行之间可共享地电势线,并且地电势线可包括用于相邻像素行的第四晶体管的第四栅极控制线。Each pixel may further include a fourth transistor connected between the source of the driving transistor and the ground potential line. This is used to act as a current drain for the drive transistors, in particular not to illuminate the display elements during the pixel programming sequence. The fourth transistor may also be controlled by a fourth gate control line shared between one pixel row. The ground potential line may be shared between one pixel row, and the ground potential line may include a fourth gate control line for a fourth transistor of an adjacent pixel row.

在另一种安排中,将电容安排连接在驱动晶体管的栅极与源极之间,并且驱动晶体管的源极与地线相连。驱动晶体管的漏极与显示元件的一端相连,显示元件的另一端与电源线相连。这样就提供了一种复杂度减小的电路,不过电路元件处于显示元件的阳极侧。In another arrangement, the capacitor is arranged to be connected between the gate and the source of the drive transistor, and the source of the drive transistor is connected to ground. The drain of the driving transistor is connected to one end of the display element, and the other end of the display element is connected to the power line. This provides a circuit of reduced complexity, although the circuit elements are on the anode side of the display element.

每个像素还可以包括连接在驱动晶体管的栅极与漏极之间的第二晶体管、连接在第二电容两端的短路晶体管、连接在电源线与驱动晶体管的漏极之间的充电晶体管以及连接在驱动晶体管的栅极与漏极之间的放电晶体管。Each pixel may also include a second transistor connected between the gate and drain of the drive transistor, a short transistor connected across the second capacitor, a charging transistor connected between the power supply line and the drain of the drive transistor, and a A discharge transistor between the gate and drain of the drive transistor.

在本发明的某些电路中,显示元件的与驱动晶体管相反的一端可以与可开关电压线相连。其可以是在一个像素行之间共享的公共阴极线。改变该公共阴极线上的电压的能力需要将其“结构化”,特别是结构化成用于各分离行的分离导线。In some circuits of the invention, the end of the display element opposite the drive transistor may be connected to a switchable voltage line. It may be a common cathode line shared between a row of pixels. The ability to vary the voltage on this common cathode line requires "structuring" it, specifically into separate wires for each separate row.

为了不需要提供结构化电极,并且为了允许阵列的所有像素共享与驱动晶体管相反的公共显示元件电极,每个像素还可以包括第二驱动晶体管。第二驱动晶体管可以被提供在电源线与第一驱动晶体管之间,或者被提供在第一驱动晶体管与显示元件之间。在每种情况下,第二驱动晶体管提供了一种防止在寻址阶段期间照射显示元件的途径,并且不需要改变电源线上或公共显示元件端子上的电压。To eliminate the need to provide structured electrodes, and to allow all pixels of the array to share a common display element electrode opposite the drive transistor, each pixel may also comprise a second drive transistor. The second driving transistor may be provided between the power supply line and the first driving transistor, or between the first driving transistor and the display element. In each case, the second drive transistor provides a way to prevent illuminating the display element during the addressing phase without requiring changes to the voltage on the power supply line or on the common display element terminal.

显示元件可包括电致发光(EL)显示元件,如电致磷光有机电致发光显示元件。The display element may comprise an electroluminescent (EL) display element, such as an electrophosphorescent organic electroluminescent display element.

本发明还提供一种用于驱动包括电流驱动的发光显示像素阵列的有源矩阵显示装置的方法,每个像素包括一个显示元件和一个用于驱动电流流过该显示元件的非晶硅驱动晶体管,该方法包括对于每个像素:The invention also provides a method for driving an active matrix display device comprising an array of current driven light emitting display pixels, each pixel comprising a display element and an amorphous silicon drive transistor for driving current through the display element , the method consists of for each pixel:

驱动电流通过该驱动晶体管到达地,并将第一电容充电到所产生的栅极-源极电压;driving current to ground through the driving transistor, and charging the first capacitor to the generated gate-source voltage;

将第一电容放电直至驱动晶体管截止为止,从而第一电容存储阈值电压;Discharging the first capacitor until the drive transistor is turned off, so that the first capacitor stores a threshold voltage;

将在驱动晶体管的栅极与源极或漏极之间与第一电容串联的第二电容充电到数据输入电压;以及charging a second capacitor connected in series with the first capacitor between the gate and the source or drain of the drive transistor to the data input voltage; and

利用从第一和第二电容两端的电压得出的栅极电压,使用驱动晶体管来驱动电流流过显示元件。A drive transistor is used to drive current through the display element using a gate voltage derived from the voltage across the first and second capacitors.

该方法在每个寻址序列中测量驱动晶体管阈值电压。该方法用于非晶硅TFT像素电路,特别是n型驱动TFT,从而必须实现短的像素编程,以便能寻址大显示器。在该方法中,可通过在流水线式寻址序列中进行的阈值电压测量(也就是令用于相邻行的寻址序列在时间上重叠)或者通过在消隐周期中在帧开头处测量所有阈值电压来实现这一点。The method measures the drive transistor threshold voltage in each addressing sequence. This method is used in amorphous silicon TFT pixel circuits, especially n-type drive TFTs, so short pixel programming must be achieved in order to be able to address large displays. In this approach, threshold voltage measurements can be made in a pipelined addressing sequence (that is, addressing sequences for adjacent rows overlap in time) or by measuring all threshold voltage to achieve this.

在流水线式寻址序列中,通过将连接在数据线与像素输入端之间的地址晶体管切换成导通来实施对第二电容充电的步骤。由公共行地址控制线同时将用于一行中每个像素的地址晶体管导通,并且在用于相邻行的地址晶体管截止之后,基本上立即将用于一行像素的地址晶体管导通。In a pipelined addressing sequence, the step of charging the second capacitor is performed by switching on an address transistor connected between the data line and the pixel input. The address transistors for each pixel in a row are turned on simultaneously by a common row address control line, and the address transistors for a row of pixels are turned on substantially immediately after the address transistors for adjacent rows are turned off.

在消隐周期序列中,在显示帧周期的初始阈值测量周期处,对每个像素的第一电容进行充电,以存储像素驱动晶体管的相应阈值电压,在阈值测量周期后为帧周期的像素驱动周期。In the blanking period sequence, at the initial threshold measurement period of the display frame period, the first capacitor of each pixel is charged to store the corresponding threshold voltage of the pixel drive transistor, and the pixel drive of the frame period after the threshold measurement period cycle.

下面将参照附图通过例子描述本发明,其中:The invention will be described below by way of example with reference to the accompanying drawings, in which:

图1表示一种已知的EL显示装置;Figure 1 shows a known EL display device;

图2为使用输入驱动电压对EL显示像素进行电流寻址的已知像素电路的示意图;2 is a schematic diagram of a known pixel circuit for current addressing of an EL display pixel using an input drive voltage;

图3为用于本发明显示装置的像素布局的第一示例的示意图;3 is a schematic diagram of a first example of a pixel layout for a display device of the present invention;

图4为图3像素布局的第一种操作方法的时序图;Fig. 4 is a timing diagram of the first operation method of the pixel layout in Fig. 3;

图5为图3像素布局的第二种操作方法的时序图;Fig. 5 is a timing diagram of the second operation method of the pixel layout in Fig. 3;

图6为图3像素布局的第三种操作方法的时序图;Fig. 6 is a timing diagram of the third operation method of the pixel layout in Fig. 3;

图7表示用于本发明显示装置的像素布局的第二示例的示意图;7 shows a schematic diagram of a second example of a pixel layout for a display device of the present invention;

图8表示用于图3或7电路的部件数值示例;Figure 8 shows an example of component values for the circuit of Figure 3 or 7;

图9表示具有本发明阈值电压补偿的像素布局的第三示例的示意图;9 shows a schematic diagram of a third example of a pixel layout with threshold voltage compensation of the present invention;

图10为图9的像素布局的操作时序图;FIG. 10 is an operation timing diagram of the pixel layout of FIG. 9;

图11表示具有本发明阈值电压补偿的像素布局的第四示例的示意图;11 shows a schematic diagram of a fourth example of a pixel layout with threshold voltage compensation of the present invention;

图12为图11的像素布局的操作时序图;FIG. 12 is an operation timing diagram of the pixel layout of FIG. 11;

图13表示具有本发明阈值电压补偿的像素布局的第五示例的示意图;13 shows a schematic diagram of a fifth example of a pixel layout with threshold voltage compensation of the present invention;

图14为图13的像素布局的第一种操作方法的时序图;FIG. 14 is a timing diagram of the first operation method of the pixel layout in FIG. 13;

图15为图13的像素布局的第二种操作方法的时序图;FIG. 15 is a timing diagram of the second operation method of the pixel layout in FIG. 13;

图16为图15的时序图的一种修改;Figure 16 is a modification of the timing diagram of Figure 15;

图17表示具有本发明阈值电压补偿的像素布局的第六示例的示意图;17 shows a schematic diagram of a sixth example of a pixel layout with threshold voltage compensation of the present invention;

图18为图17的像素布局的第一种操作方法的时序图;FIG. 18 is a timing diagram of the first operation method of the pixel layout in FIG. 17;

图19为图17的像素布局的第二种操作方法的时序图;FIG. 19 is a timing diagram of the second operation method of the pixel layout in FIG. 17;

图20为图18的时序图的一种修改。FIG. 20 is a modification of the timing diagram of FIG. 18 .

在不同附图中相同附图标记用于相同部件,并将不再重复描述这些部件。The same reference numerals are used for the same components in different drawings, and descriptions of these components will not be repeated.

图3表示根据本发明的第一种像素安排。在各优选实施例中,每个像素具有一个电致发光(EL)显示元件2和串联连接在电源线26与阴极线28之间的非晶硅驱动晶体管TD。驱动晶体管TD用于驱动电流流过显示元件2。Figure 3 shows a first pixel arrangement according to the invention. In preferred embodiments, each pixel has an electroluminescent (EL) display element 2 and an amorphous silicon drive transistor T D connected in series between a power supply line 26 and a cathode line 28 . The driving transistor T D is used to drive current to flow through the display element 2 .

第一电容C1与第二电容C2串联连接在驱动晶体管TD的栅极与源极之间。输入到像素的数据被提供给第一与第二电容之间的结点30,并将第二电容C2充电到像素数据电压,如下面所述。第一电容C1用于在其上存储驱动晶体管阈值电压。The first capacitor C1 and the second capacitor C2 are connected in series between the gate and the source of the driving transistor TD . Data input to the pixel is provided to the junction 30 between the first and second capacitors, and charges the second capacitor C2 to the pixel data voltage, as described below. The first capacitor C1 is used to store the driving transistor threshold voltage thereon.

输入晶体管A1连接在输入数据线32与第一和第二电容间的结点30之间。该第一晶体管对将数据电压施加给像素进行定时,以用于将数据电压存储到第二电容C2上。The input transistor A1 is connected between the input data line 32 and the junction 30 between the first and second capacitors. The first transistor clocks the application of the data voltage to the pixel for storing the data voltage on the second capacitor C2 .

第二晶体管A2连接在驱动晶体管TD的栅极与漏极之间。这是用来控制将电流从电源线26提供给第一电容C1。从而,通过将第二晶体管A2导通,可将第一电容C1充电到驱动晶体管TD的栅极-源极电压。The second transistor A2 is connected between the gate and the drain of the driving transistor TD . This is used to control the supply of current from the power supply line 26 to the first capacitor C 1 . Thus, by turning on the second transistor A2 , the first capacitor C1 can be charged to the gate-source voltage of the driving transistor TD .

第三晶体管A3连接在第二电容C2的两端。这是用来将第二电容短路,从而仅第一电容能存储驱动晶体管TD的栅极-源极电压。The third transistor A3 is connected to both ends of the second capacitor C2 . This is to short-circuit the second capacitor so that only the first capacitor can store the gate-source voltage of the drive transistor TD .

第四晶体管A4连接在驱动晶体管TD的源极与地之间。这是用来充当驱动晶体管的电流漏,特别是在像素编程序列期间不照射显示元件。The fourth transistor A4 is connected between the source of the driving transistor TD and ground. This is used to act as a current drain for the drive transistors, in particular not to illuminate the display elements during the pixel programming sequence.

电容24可包括一个附加的存储电容(如图2的电路),或者可包括显示元件的自电容。Capacitor 24 may comprise an additional storage capacitor (as in the circuit of FIG. 2), or may comprise the self-capacitance of the display element.

由与晶体管A1到A4的栅极相连的相应行导线来控制晶体管A1到A4。如下面将要进一步描述的,可共享某些行导线。从而对像素阵列的寻址包括依次寻址各像素行,并且数据线32包括列导线,从而按照传统的方式依次寻址各行而同时寻址一整行像素。Transistors A1 to A4 are controlled by respective row conductors connected to the gates of transistors A1 to A4 . As will be described further below, certain row conductors may be shared. Addressing of the pixel array thus involves sequentially addressing rows of pixels, and data lines 32 comprise column conductors, thereby addressing rows sequentially while simultaneously addressing an entire row of pixels in a conventional manner.

图3的电路可按照多种不同方式操作。首先将描述基本操作,然后解释将所述基本操作扩展到提供流水线式寻址的方法。流水线式寻址意味着在相邻行的控制信号之间存在某种定时重叠。The circuit of Figure 3 can operate in a number of different ways. The basic operation will be described first, and then the method of extending the basic operation to provide pipelined addressing will be explained. Pipelined addressing means that there is some timing overlap between the control signals of adjacent rows.

只有驱动晶体管TD在恒流模式下使用。电路中的所有其它TFT A1到A4都用作操作于短占空比的开关。从而,这些装置中的阈值电压漂移较小,不会影响电路性能。图4中表示时序图。曲线A1到A4表示施加给各晶体管的栅极电压。曲线“28”表示施加给阴极线28的电压,曲线“数据”的空白部分表示数据信号在数据线32上的定时。阴影区域表示数据线32上没有数据的时间。从下面的描述显然可以看出,在该时间期间内可以施加用于其它像素行的数据,以便将数据几乎连续地施加给数据线32,从而呈现流水线式操作。Only the drive transistor TD is used in constant current mode. All other TFTs A 1 to A 4 in the circuit are used as switches operating at short duty cycles. Consequently, threshold voltage shifts in these devices are small and do not affect circuit performance. A timing chart is shown in FIG. 4 . Curves A1 to A4 represent the gate voltages applied to the respective transistors. Curve "28" represents the voltage applied to cathode line 28, and the blank portion of curve "Data" represents the timing of the data signal on data line 32. The shaded area represents the time when there is no data on the data line 32 . As will be apparent from the description below, data for other pixel rows may be applied during this time period so that data is applied to data line 32 almost continuously, thereby exhibiting a pipelined operation.

该电路操作用于将驱动晶体管TD的阈值电压存储到C1上,然后将数据电压存储到C2上,从而TD的栅极-源极电压为数据电压加上阈值电压。The circuit operates to store the threshold voltage of drive transistor TD on C1 and then store the data voltage on C2 such that the gate-source voltage of TD is the data voltage plus the threshold voltage.

该电路操作包括以下步骤。The circuit operation includes the following steps.

使用于显示器的一行中的像素的阴极(线28)处于一个在整个寻址序列过程中足以保持LED反向偏压的电压。在图4的曲线“28”中其为正脉冲。The cathodes (line 28) for the pixels in one row of the display are at a voltage sufficient to keep the LEDs reverse biased throughout the addressing sequence. In curve "28" of FIG. 4 it is a positive pulse.

地址线A2和A3变成高电平,以使相关的TFT导通。这就将电容C2短路,并将电容C1的一侧与电源线相连,将其另一侧与LED阳极相连。Address lines A2 and A3 go high to turn on the associated TFT. This shorts capacitor C2 and connects one side of capacitor C1 to the power line and the other side to the LED anode.

然后,地址线A4变成高电平,使其TFT导通。这就使LED的阳极处于地电平,并在驱动TFT TD上产生大的栅极-源极电压。由此将C1充电,不过C2没有被充电,因为其保持短路。Then, the address line A4 becomes high level, turning on its TFT. This puts the anode of the LED at ground level and generates a large gate-source voltage across the driving TFT TD . C1 is thus charged, but C2 is not charged as it remains short circuited.

接下来,地址线A4变成低电平,使相应的TFT截止,并且驱动TFT TD将电容C1放电,直至其到达其阈值电压为止。由此,将驱动晶体管TD的阈值电压存储到C1上。同样,第二电容C2上没有电压。Next, address line A4 goes low, turns off the corresponding TFT, and drives TFT TD to discharge capacitor C1 until it reaches its threshold voltage. Thus, the threshold voltage of the drive transistor TD is stored on C1 . Likewise, there is no voltage on the second capacitor C2 .

使A2为低电平,以隔离测得的第一电容C1上的阈值电压,并且使A3处于低电平,从而使第二电容C2不再被短路。 A2 is made low to isolate the measured threshold voltage on the first capacitor C1 , and A3 is made low so that the second capacitor C2 is no longer shorted.

然后,使A4再次处于高电平,以将阳极与地相连。然后将数据电压施加给第二电容C2,同时通过A1上的高电平脉冲使输入晶体管导通。Then, bring A4 high again to connect the anode to ground. Then the data voltage is applied to the second capacitor C 2 , and at the same time, the input transistor is turned on by the high level pulse on A 1 .

最后,A4变成低电平,随后使阴极减小到地电平。然后,LED阳极浮动到其工作点。Finally, A4 goes low, subsequently reducing the cathode to ground. Then, the LED anode floats to its operating point.

或者可以在使A2和A3处于低电平之后并且使A4处于高电平之前使阴极减小到地电平。Or the cathode can be brought down to ground after taking A2 and A3 low and before bringing A4 high.

寻址序列可以是流水线式的,从而在任何一个时刻可对多于一行像素进行编程。从而,线A2到A4以及行向阴极线28上的寻址信号可与针对不同行的相同信号重叠。因此,寻址序列的长度不表示长的像素编程时间,并且有效的行时间仅由当地址线A1为高电平时充电第二电容C2所需的时间限制。该时间周期与用于标准有源矩阵寻址序列的时间周期相同。寻址的其它部分意味着总帧时间将仅由显示器前几行所需的设置时间(set-up time)稍加延长。不过,在帧消隐周期内很容易进行这种设置,因此阈值电压测量所需的时间不是问题。The addressing sequence can be pipelined so that more than one row of pixels can be programmed at any one time. Thus, the addressing signals on lines A2 through A4 and the row-wise cathodic line 28 can overlap with the same signals for different rows. Thus, the length of the addressing sequence does not imply a long pixel programming time, and the effective row time is limited only by the time required to charge the second capacitor C2 when the address line A1 is high. This time period is the same as that used for a standard active matrix addressing sequence. The other part of addressing means that the total frame time will be extended only slightly by the set-up time required for the first few lines of the display. However, this setup is easily done during the frame blanking period, so the time required for the threshold voltage measurement is not an issue.

在图5的时序图中表示出流水线式寻址。其中已经将用于晶体管A2到A4的控制信号组合成单个曲线,不过操作与参照图4所描述的相同。图5中“数据”曲线表示几乎连续地使用数据线32向连续行提供数据。Pipelined addressing is shown in the timing diagram of FIG. 5 . Therein the control signals for transistors A2 to A4 have been combined into a single curve, but the operation is the same as described with reference to FIG. 4 . The "data" curve in FIG. 5 shows that data line 32 is used nearly continuously to provide data to successive rows.

在图4和5的方法中,阈值测量操作与显示操作组合,从而依次对每行像素进行阈值测量和显示。In the methods of FIGS. 4 and 5 , the threshold measurement operation is combined with the display operation, so that each row of pixels is sequentially thresholded and displayed.

图6表示一种方法的时序图,其中对于显示器中的所有像素在帧开始时测量阈值电压。图6中的曲线与图4中的曲线相应。该方法的优点在于不需要结构化阴极(即,如实现图4和5的方法所需的那样,不同的阴极线28用于不同行),不过其缺点在于泄漏电流会造成某种图像不均匀。该方法的电路图依然为图3。Figure 6 shows a timing diagram of a method in which threshold voltages are measured at the beginning of a frame for all pixels in a display. The curve in FIG. 6 corresponds to the curve in FIG. 4 . The advantage of this approach is that it does not require structured cathodes (i.e. different cathode lines 28 for different rows, as is required to implement the approach of Figures 4 and 5), but the disadvantage is that leakage currents can cause some image non-uniformity . The circuit diagram of this method is still shown in FIG. 3 .

如图6中所示,信号A2、A3、A4和用于图6中阴极线28的信号在消隐周期中被提供给显示器中的所有像素,以执行阈值电压测量。在消隐周期中,信号A4同时被提供给每个像素,从而所有信号A2到A4同时被提供给所有行。在此期间,没有数据可以被提供给像素,从而对应于图6底部的数据曲线的阴影部分。As shown in Figure 6, the signals A2 , A3 , A4 and the signal for cathode line 28 in Figure 6 are provided to all pixels in the display during the blanking period to perform threshold voltage measurements. During the blanking period, signal A4 is supplied to each pixel simultaneously, so that all signals A2 to A4 are supplied to all rows simultaneously. During this period, no data can be provided to the pixel, corresponding to the shaded portion of the data curve at the bottom of FIG. 6 .

在随后的寻址周期中,数据分别被依次提供给每行,如信号A1。图6中A1上的脉冲序列表示用于连续行的脉冲,并且通过将数据施加给数据线32来对每个脉冲进行定时。In the subsequent addressing period, data is sequentially provided to each row, eg, signal A 1 . The pulse train on A1 in FIG. 6 represents pulses for successive rows, and each pulse is timed by applying data to data line 32 .

图3中的电路具有大量行,用于控制晶体管和结构化阴极线(如果需要的话)。图7表示减小了所需行数的一种电路修改。各时序图表示出信号A2和A3非常相似。仿真表明,实际上可使A2和A3相同,从而仅需要一条地址线。通过将与图3中晶体管A4相关的地线与前一行中的地址线A4连接,可进一步减小行数。图7中的电路表示用于第n行和第n-1行的地址线。The circuit in Figure 3 has a large number of rows for control transistors and structured cathode lines (if required). Figure 7 shows a circuit modification which reduces the number of rows required. The timing diagrams show that signals A2 and A3 are very similar. Simulations have shown that A2 and A3 can actually be made identical so that only one address line is required. The number of rows can be further reduced by connecting the ground line associated with transistor A4 in FIG. 3 to address line A4 in the previous row. The circuit in Fig. 7 shows address lines for row n and row n-1.

图8表示在示例仿真中使用的用于图3电路的部件数值。以μm为单位给出晶体管的长度(L)和宽度(W)尺寸。寻址时间为16μs(即A1导通的时间)。利用比驱动TFT上的阈值高5V的电压,电路将高达1.5μA的电流提供给LED。TFT迁移率为0.41cm2/Vs。假设在顶部发射结构中为全孔径,则使用在400μm×133μm尺寸的像素中效率为10Cd/A的LED(目前可得到的超黄聚合物效率(Super-yellow PolymerEfficiency))将得到280Cd/m2FIG. 8 shows component values for the circuit of FIG. 3 used in an example simulation. The length (L) and width (W) dimensions of the transistor are given in μm. The addressing time is 16μs (that is, the time when A 1 is turned on). With a voltage 5V above the threshold on the driver TFT, the circuit delivers up to 1.5µA to the LED. The TFT mobility is 0.41 cm 2 /Vs. Using an LED with an efficiency of 10 Cd/A in a pixel size of 400 μm x 133 μm (Super-yellow Polymer Efficiency currently available) would give 280 Cd/m 2 assuming a full aperture in a top emitting structure .

该仿真表明,阈值电压(用于驱动晶体管)从4V改变到高达10V时,仅产生10%的输出电流改变。可计算出在室温下这种显示器的寿命为60,000小时,在40℃时寿命为8000小时。This simulation shows that changing the threshold voltage (for driving the transistor) from 4V up to 10V produces only a 10% change in output current. The lifetime of such a display can be calculated to be 60,000 hours at room temperature and 8000 hours at 40°C.

图9表示图3电路的一种修改。尽管在本申请中没有进行详细描述,不过图9的电路在其中每个像素具有交替操作的两个或多个驱动晶体管的像素电路中具有特别的用途。可以以一种简单的方式通过减少部件数量将图9的电路复制到单个像素中。这可以通过使某些TFT具有双重功能来实现。在提供多个驱动晶体管时,需要对多个驱动TFT的源极或栅极进行独立控制,并且用于控制两个驱动TFT的所有TFT必须都工作在通常截止的基础上(即具有低占空比),除非这些TFT本身具有某种VT漂移校正。FIG. 9 shows a modification of the circuit of FIG. 3. FIG. Although not described in detail in this application, the circuit of FIG. 9 has particular utility in pixel circuits in which each pixel has two or more drive transistors operating alternately. The circuit of Figure 9 can be replicated in a single pixel in a simple manner by reducing the number of components. This can be achieved by making certain TFTs dual-functional. When multiple drive transistors are provided, independent control of the sources or gates of the multiple drive TFTs is required, and all TFTs used to control the two drive TFTs must operate on a normally off basis (i.e., have a low duty cycle). ratio), unless these TFTs themselves have some kind of VT drift correction.

图3中与地址线A4相连的TFT较大,因为其需要在寻址周期中使由驱动TFT提供的电流通过。从而,该TFT是双重目的TFT的一个理想的候选,即同时用作驱动TFT和寻址TFT。遗憾的是,图3中所示的电路不能实现这一点。The TFT connected to the address line A4 in FIG. 3 is large because it needs to pass the current supplied by the driving TFT during the address period. Thus, this TFT is an ideal candidate for a dual purpose TFT, ie used as both a driving TFT and an addressing TFT. Unfortunately, the circuit shown in Figure 3 cannot achieve this.

在图9中,使用相同的附图标记表示与图3电路中相同的部件,并不再进行重复描述。In FIG. 9, the same components as those in the circuit of FIG. 3 are denoted by the same reference numerals, and the description thereof will not be repeated.

在该电路中,第一和第二电容C1和C2串联连接在驱动晶体管TD的栅极与漏极之间。而且,将像素输入提供给电容之间的结点。用于存储阈值电压的第一电容C1连接在驱动晶体管栅极与输入端之间。用于存储数据输入电压的第二电容C2直接连接在像素输入端与电源线(晶体管漏极与其相连)之间。与控制线A3相连的晶体管同样用于为第一电容C1提供充电路径,第一电容C1将第二电容C2旁路,从而仅使用电容C1来存储阈值栅极-源极电压。In this circuit, first and second capacitors C1 and C2 are connected in series between the gate and drain of the driving transistor TD . Also, the pixel input is provided to the junction between the capacitors. The first capacitor C1 for storing the threshold voltage is connected between the gate of the driving transistor and the input terminal. The second capacitor C2 for storing the data input voltage is directly connected between the pixel input terminal and the power line (to which the drain of the transistor is connected). The transistor connected to the control line A3 is also used to provide a charging path for the first capacitor C1 , which bypasses the second capacitor C2 so that only capacitor C1 is used to store the threshold gate-source voltage .

图10中表示电路操作,并具有以下步骤:Circuit operation is represented in Figure 10 and has the following steps:

在整个寻址序列过程中,使显示器一行中像素的阴极处于足以保持LED反向偏压的电压。During the entire addressing sequence, the cathodes of the pixels in one row of the display are brought to a voltage sufficient to keep the LEDs reverse biased.

地址线A2和A3变为高电平,以将相关的TFT导通,这样做将C1与C2的并联组合与电源线相连。The address lines A2 and A3 go high to turn on the associated TFT, which in doing so connects the parallel combination of C1 and C2 to the power supply line.

然后地址线A4变为高电平,以将其TFT导通,这样做使LED的阳极处于地电平,并在驱动TFT TD上产生大的栅极-源极电压。The address line A4 then goes high to turn on its TFT, which in doing so puts the LED's anode at ground and creates a large gate-source voltage across the drive TFT TD .

接下来,地址线A4变为低电平,以使TFT截止,并且驱动TFT TD对并联电容C1+C2放电,直至其达到阈值电压为止。Next, the address line A4 goes low to turn off the TFT, and drives the TFT TD to discharge the parallel capacitance C1 + C2 until it reaches the threshold voltage.

然后,A2和A3变为低电平,以隔离所测量的阈值电压。 A2 and A3 then go low to isolate the measured threshold voltage.

之后,A1导通,并将数据电压存储到电容C1上。Afterwards, A 1 is turned on, and stores the data voltage on the capacitor C 1 .

最后,A4变为低电平,随后使阴极下降到地电平。Finally, A4 goes low, which subsequently drops the cathode to ground.

同样如上所述,可使用该电路在消隐周期中执行流水线式寻址或阈值测量。Also as described above, this circuit can be used to perform pipelined addressing or threshold measurements during blanking periods.

从而电压Vdata-VT被存储到驱动TFT的栅极-漏极上。因此:Thus the voltage V data -V T is stored on the gate-drain of the driving TFT. therefore:

II == ββ 22 (( VV gsgs -- VV TT )) 22 == ββ 22 (( VV dsds -- VV dgd g -- VV TT )) 22 == ββ 22 (( VV dsds -- VV datadata )) 22

从而,消除了阈值电压依赖性。注意,此时电流取决于LED阳极电压。Thus, the threshold voltage dependence is eliminated. Note that the current depends on the LED anode voltage at this point.

上述电路具有相当大量的部件(由于驱动TFT的独立的栅极和源极)。仅具有一个独立节点(即源极或栅极)的电路可以使部件数更少。下面描述的电路使用在LED阴极侧的电路,并使用独立的源极电压以实现具有恢复功能的阈值电压测量电路。参照图11描述阈值电压测量电路,并且图12中为时序图。The circuit described above has a relatively high number of components (due to the separate gates and sources driving the TFTs). Circuits with only one independent node (i.e. source or gate) allow for a lower parts count. The circuit described below uses the circuit on the cathode side of the LED and uses an independent source voltage to implement a threshold voltage measurement circuit with a recovery function. The threshold voltage measurement circuit is described with reference to FIG. 11 , and in FIG. 12 is a timing chart.

在图11的电路中,每个像素具有串联连接在驱动晶体管TD的栅极与地线之间的第一和第二电容C1、C2。驱动晶体管的源极与地线相连,不过在组合两个电路时,每个驱动晶体管的源极与相应的控制线相连。输入到像素的数据同样被提供给第一与第二电容之间的结点。In the circuit of Fig. 11, each pixel has a first and a second capacitance C1 , C2 connected in series between the gate of the drive transistor TD and ground. The sources of the drive transistors are connected to ground, but when combining the two circuits, the source of each drive transistor is connected to the corresponding control line. Data input to the pixel is also provided to the junction between the first and second capacitors.

短路晶体管连接在第二电容C2的两端,并受线A2的控制。如同前面的电路,这样做可将栅极-源极电压存储到电容C1上,从而旁路电容C2。与控制线A4相关的充电晶体管连接在电源线50与驱动晶体管TD的漏极之间。其与同控制线A3相关并且连接在驱动晶体管的栅极与漏极之间的放电晶体管一起为电容C1提供充电路径。The short-circuit transistor is connected across the second capacitor C2 and is controlled by the line A2 . As with the previous circuit, this stores the gate-source voltage on capacitor C1 , thereby bypassing capacitor C2 . The charging transistor associated with control line A4 is connected between power supply line 50 and the drain of drive transistor TD . It provides a charging path for capacitor C1 together with a discharge transistor associated with control line A3 and connected between the gate and drain of the drive transistor.

该电路操作如下:保持A2和A3为高电平,然后A4短暂地保持高电平以将阴极拉到高电平,并将电容C1充电到高的栅极-源极电压。电源线为地电平,以向LED施加反向偏压。然后TD放电到其阈值电压(与线A3相关的放电晶体管被导通),并且将其存储到C1上。接下来,使A2和A3处于低电平,使A1处于高电平,并将数据传送到C2上。然后使电源线再次处于高电平,以点亮LED。The circuit operates as follows: hold A2 and A3 high, then hold A4 high briefly to pull the cathode high and charge capacitor C1 to a high gate-source voltage. The power line is ground level to reverse bias the LED. TD is then discharged to its threshold voltage (the discharge transistor associated with line A3 is turned on) and stored onto C1 . Next, make A2 and A3 low, make A1 high, and transfer the data onto C2 . Then bring the power line high again to light up the LED.

同样,可以将寻址序列流水线化,或者在场消隐周期内测量阈值电压。Likewise, the addressing sequence can be pipelined, or the threshold voltage can be measured during the vertical blanking period.

在上面图3、7和9的共阴极电路中,需要结构化阴极以便在寻址周期期间能够将各单独行的阴极切换到不同的电压。In the common cathode circuits of Figures 3, 7 and 9 above, structured cathodes are required to be able to switch the cathodes of the individual rows to different voltages during the addressing period.

图13表示图3电路的第一种修改,其中不需要结构化阴极。在电源线26与第一驱动晶体管TD之间,提供与第一驱动晶体管TD串联的第二驱动晶体管TSFigure 13 shows a first modification of the circuit of Figure 3 in which no structured cathode is required. Between the power supply line 26 and the first drive transistor TD , a second drive transistor Ts is provided in series with the first drive transistor TD .

在该电路中,在电源线26(而不是阴极线28)上提供可切换的电压,这是用来将第二驱动晶体管TS切换成截止。图14中表示出操作定时。In this circuit, a switchable voltage is provided on the supply line 26 (instead of the cathode line 28), which is used to switch the second drive transistor T S off. Operation timings are shown in FIG. 14 .

如图所示,该电路的操作与图4电路的操作类似。取代用于切断显示元件的阴极28,使电源线26在寻址序列期间处于低电平。这样就将第二驱动晶体管TS截止,第二驱动晶体管TS是一种通过将其栅极与漏极连接在一起的二极管连接。As shown, the operation of this circuit is similar to that of the circuit of FIG. 4 . Instead of switching off the cathode 28 of the display element, the power line 26 is brought low during the addressing sequence. This turns off the second drive transistor T S which is diode-connected by connecting its gate and drain together.

在晶体管A2-A4导通时,在周期的初始部分电源线26为高电平,因为在此期间使用电源线对电容C1充电,并且在此期间第二驱动晶体管TS必须是导通的。该初始周期对于要被充电的电容C1来说足够长。When transistors A2 - A4 are conducting, the supply line 26 is high for the initial part of the cycle, because the supply line is used to charge capacitor C1 during this period, and the second drive transistor Ts must be conducting during this period. pass. This initial period is long enough for the capacitor C1 to be charged.

当电源线被切换到低电平时,第二地址晶体管TS截止。结果,不需要将第四晶体管A4切换成截止。When the power line is switched to low level, the second address transistor T S is turned off. As a result, there is no need to switch the fourth transistor A4 off.

同样,按照与参照图5所述相似的方式,如图15中所示,寻址可以是流水线式的。Also, addressing may be pipelined as shown in FIG. 15 in a manner similar to that described with reference to FIG. 5 .

图15的寻址方案不允许光输出有任何操作循环(duty cycling)。这是一种由此并非在所有时间都照射驱动晶体管的技术。这样就能够减小阈值电压漂移,并且还能够改善运动描绘(motion portrayal)。为了提供驱动晶体管的操作循环,如图16中表示地那样修改图15的操作定时。The addressing scheme of Figure 15 does not allow any duty cycling of the light output. This is a technique whereby the drive transistor is not illuminated all the time. This reduces threshold voltage drift and also improves motion portrayal. In order to provide the operating cycle of the drive transistor, the operating timing of FIG. 15 is modified as represented in FIG. 16 .

如参照图14所描述的那样,在电容C1被充电之后,使电源线26上的电压处于低电平,从而切断到显示元件2的电流。第一驱动晶体管TD依然将具有高于阈值的栅极-源极电压,并且通过晶体管A2和A3来去除该电压,从而驱动晶体管TD的源极-漏极电流去除电容C1上的电荷,直至达到阈值电压为止。As described with reference to FIG. 14 , after the capacitor C1 is charged, the voltage on the power supply line 26 is made low, thereby cutting off the current to the display element 2 . The first drive transistor TD will still have a gate-source voltage above threshold, and this voltage is removed through transistors A2 and A3 , so that the source-drain current of drive transistor TD is removed by capacitor C1 charge until the threshold voltage is reached.

在图16的方案中,电源线仅在一部分(例如一半)帧周期内保持高电平。如图16中所示,在帧周期中随后的某一时刻,电源线26被切换到低电平。为了确保在帧周期的其余时间内驱动晶体管TD被切换成截止,在电源线被切换到低电平之后,如图所示的那样在控制线上提供用于晶体管A2和A3的脉冲。In the scheme of FIG. 16, the power line is kept high only for a part (eg, half) of the frame period. As shown in FIG. 16, at some later point in the frame period, the power line 26 is switched low. To ensure that the drive transistor TD is switched off for the remainder of the frame period, after the power line is switched low, pulses are provided on the control line for transistors A2 and A3 as shown .

在图13的例子中,第四晶体管A4连接到地线。不过,该晶体管可以与前一行的电源线26相连(而非如图13中那样与地相连)。图16的定时可实现这一点,因为当测量前一行的各驱动TFT的阈值电压时,电源线处于地电平。在第四晶体管导通的时间内,可使用该周期(图16中标记为27)来充当下一像素行的地线。从而,当用于前一行的电源线为低电平时,A4的寻址周期处于该周期内。In the example of FIG. 13, the fourth transistor A4 is connected to ground. However, the transistor could be connected to the power line 26 of the previous row (instead of being connected to ground as in Figure 13). The timing of Figure 16 achieves this because the power supply line is at ground level when measuring the threshold voltages of the drive TFTs of the previous row. During the time that the fourth transistor is on, this period (labeled 27 in Figure 16) can be used to act as ground for the next row of pixels. Thus, the address cycle of A4 is in that cycle when the power line for the previous row is low.

图13的电路在电源线26与第一驱动晶体管TD之间添加了第二驱动晶体管。该第二驱动晶体管将通过与第一驱动晶体管TD相同的电流,从而不需要阈值补偿。栅极-源极电压将浮动到第二驱动晶体管所需的电平,以便提供第一驱动晶体管TD所要求的电流。The circuit of FIG. 13 adds a second drive transistor between the power supply line 26 and the first drive transistor TD . This second drive transistor will pass the same current as the first drive transistor TD , so threshold compensation is not required. The gate-source voltage will float to the level required by the second drive transistor TD to provide the current required by the first drive transistor TD .

另一种选择是在第一驱动晶体管TD与显示元件之间添加第二驱动晶体管,这同样是为了不需要提供结构化阴极。此外,同样不需要对第二驱动晶体管进行特定补偿。Another option is to add a second drive transistor between the first drive transistor T D and the display element, again in order not to provide a structured cathode. Furthermore, no specific compensation for the second drive transistor is likewise required.

图17中表示出该电路的一个例子。第二驱动晶体管TS的栅极通过第四晶体管A4接地,第五晶体管A5连接在第五晶体管的栅极与漏极之间。在其它方面,该电路与图3相同,并且按照相同方式操作。An example of this circuit is shown in FIG. 17 . The gate of the second driving transistor TS is grounded through the fourth transistor A4 , and the fifth transistor A5 is connected between the gate and the drain of the fifth transistor. In other respects the circuit is the same as in Figure 3 and operates in the same manner.

从下面的描述显然可以看出,该电路不需要在显示元件的公共阴极端或在电源线上提供切换电压。As will be apparent from the description below, the circuit does not require switching voltages to be provided at the common cathode terminals of the display elements or on the supply lines.

如图18中所示,在寻址阶段开始时,晶体管A2-A5都被切换成导通。对于图3的电路,这样做将电容C1充电到使驱动晶体管TD导通的电平,并将电容C2短路。驱动晶体管TD的源极通过第四和第五晶体管A4、A5接地。在此期间,第二驱动晶体管TS截止,这是因为栅极通过第四晶体管A4耦合到地。As shown in Figure 18, at the beginning of the addressing phase, transistors A2 - A5 are all switched on. For the circuit of Figure 3, doing this charges capacitor C1 to a level that turns on drive transistor TD and shorts capacitor C2 . The source of the driving transistor T D is grounded through the fourth and fifth transistors A 4 , A 5 . During this time, the second drive transistor TS is off because the gate is coupled to ground through the fourth transistor A4 .

然后使第五晶体管A5的栅极处于低电平,从而将其切换成截止。按照与图3电路相同的方式,通过驱动晶体管(因为源极-栅极电压不变)的驱动电流对电容C1进行放电,直至阈值电压被存储为止。从而,驱动晶体管源极上的电压为低于阈值电压的电源线电压,其在C1两端下降。The gate of the fifth transistor A5 is then brought low, thereby switching it off. In the same manner as the circuit of Figure 3, the drive current through the drive transistor (since the source-gate voltage does not change) discharges capacitor C1 until the threshold voltage is stored. Thus, the voltage on the source of the drive transistor is the supply line voltage below the threshold voltage, which drops across C1 .

然后将晶体管A2和A3切换成截止,以便将各电容隔离。在A1上施加寻址脉冲之前,第五地址晶体管再次被导通。这样做通过第四和第五晶体管将驱动晶体管TD的源极(从而将数据存储电容C2的一端)拉到地电平,从而在寻址阶段期间可将数据电压存储到C2上。Transistors A2 and A3 are then switched off to isolate the respective capacitors. The fifth address transistor is turned on again before the address pulse is applied on A1 . Doing so pulls the source of drive transistor TD (and thus one end of data storage capacitor C2 ) to ground through the fourth and fifth transistors so that a data voltage can be stored on C2 during the addressing phase.

在寻址脉冲结束时晶体管A4截止,以便允许第二驱动晶体管TS导通(因为其栅极不再保持地电平),并且驱动显示元件。Transistor A4 is turned off at the end of the address pulse to allow the second drive transistor TS to turn on (because its gate is no longer held at ground level) and drive the display element.

在寻址结束时晶体管A5也截止。这样A5就保持短占空比,以防止操作过程中发生显著的老化。A5的栅极-源极和栅极-漏极寄生电容能够使第二驱动晶体管保持导通。Transistor A5 is also off at the end of addressing. This keeps the duty cycle of A5 short to prevent significant aging during operation. The gate-source and gate-drain parasitic capacitances of A5 are able to keep the second drive transistor turned on.

按照与上面所述相同的方式,可使用流水线式寻址,并且在图19中表示出流水线式寻址。In the same manner as described above, pipelined addressing can be used and is shown in FIG. 19 .

图20表示对参照图18所述的时序的一种修改。在此情形中,在晶体管A2和A3被切换成截止以将电容隔离之后,与用于A1的寻址脉冲同时,第五地址晶体管被导通。在寻址脉冲的开始部分,数据线32带有地电压(如底部曲线所示)。从而,在寻址阶段的开始部分,电容C1与C2之间的结点也接地,从而使电容C2的两侧都接地。因此,即使A3截止,在C2两端也没有电压。这样有助于确保在将数据信号加载到C2上之后,驱动晶体管TD的阈值电压被保留在C1两端。FIG. 20 shows a modification to the timing described with reference to FIG. 18 . In this case, the fifth address transistor is turned on simultaneously with the address pulse for A1 after transistors A2 and A3 are switched off to isolate the capacitance. At the beginning of the address pulse, the data line 32 is at ground voltage (as shown by the bottom curve). Thus, at the beginning of the addressing phase, the junction between capacitors C1 and C2 is also grounded, thereby grounding both sides of capacitor C2 . So even though A3 is off, there is no voltage across C2 . This helps to ensure that the threshold voltage of drive transistor TD is retained across C1 after the data signal is loaded onto C2 .

所述具体电路布局存在可以按照相同方式工作的其它修改。本质上,本发明提供一种能将阈值电压存储到一个电容上并且将数据信号存储到另一电容上的电路,这些电容串联连接在驱动晶体管的栅极与源极或漏极之间。为了将阈值电压存储到第一电容上,该电路能使用来自第一电容的电荷驱动该驱动晶体管,直至该驱动晶体管截止为止,此时第一电容存储一个从所述阈值栅极-源极电压得出的电压。There are other modifications to the specific circuit layout that can work in the same manner. Essentially, the present invention provides a circuit capable of storing a threshold voltage on one capacitor and a data signal on another capacitor connected in series between the gate and source or drain of a drive transistor. To store a threshold voltage onto the first capacitor, the circuit can drive the drive transistor with charge from the first capacitor until the drive transistor turns off, at which point the first capacitor stores a gate-source voltage from the threshold resulting voltage.

所述电路可用于目前可获得的LED装置。不过,电致发光(EL)显示元件可包括电致磷光有机电致发光显示元件。本发明可将a-Si:H用于有源矩阵OLED显示器。The circuit can be used in currently available LED devices. However, the electroluminescent (EL) display element may include an electrophosphorescent organic electroluminescent display element. The present invention can use a-Si:H for active matrix OLED displays.

上面仅示出用n型晶体管实现上述电路,并且这些都将是非晶硅装置。尽管优选用非晶硅制造n型装置,不过当然可以用p型装置来实现供替换的电路。Only n-type transistors are shown above to implement the above circuits, and these will all be amorphous silicon devices. Although amorphous silicon is preferably used to fabricate n-type devices, it is of course possible to implement alternative circuits with p-type devices.

本领域技术人员显然可想到多种其它修改。Various other modifications will be apparent to those skilled in the art.

Claims (35)

1. 一种包括显示像素阵列的有源矩阵装置,每个像素包括:1. An active matrix device comprising an array of display pixels, each pixel comprising: 电流驱动的发光显示元件(2);A current-driven light-emitting display element (2); 用于驱动电流流过显示元件的非晶硅驱动晶体管(TD);An amorphous silicon drive transistor (T D ) for driving current through the display element; 串联连接在驱动晶体管的栅极与源极或漏极之间的第一和第二电容(C1,C2),输入到像素的数据被提供给第一与第二电容(C1,C2)之间的结点,从而将第二电容(C2)充电到一个从像素数据电压得出的电压,并且将一个从驱动晶体管阈值电压得出的电压存储到第一电容(C1)上。The first and second capacitors (C 1 , C 2 ) are connected in series between the gate and the source or drain of the driving transistor, and the data input to the pixel is supplied to the first and second capacitors (C 1 , C 2 ). 2 ) to charge the second capacitor (C 2 ) to a voltage derived from the pixel data voltage and to store a voltage derived from the drive transistor threshold voltage to the first capacitor (C 1 ) superior. 2. 如权利要求1所述的装置,其中每个像素还包括连接在输入数据线(32)与第一和第二电容(C1,C2)间的结点之间的输入第一晶体管(A1)。2. A device as claimed in claim 1, wherein each pixel further comprises an input first transistor connected between the input data line (32) and the junction between the first and second capacitors (C 1 , C 2 ) (A 1 ). 3. 如权利要求1或2所述的装置,其中驱动晶体管(TD)的漏极与电源线(26)相连。3. The device as claimed in claim 1 or 2, wherein the drain of the drive transistor (T D ) is connected to the power supply line (26). 4. 如权利要求1或2所述的装置,其中每个像素还包括连接在驱动晶体管的栅极与漏极之间的第二晶体管(A2)。4. A device as claimed in claim 1 or 2, wherein each pixel further comprises a second transistor ( A2 ) connected between the gate and drain of the drive transistor. 5. 如权利要求4所述的装置,其中由在一个像素行之间共享的第一栅极控制线来控制第二晶体管(A2)。5. A device as claimed in claim 4, wherein the second transistor ( A2 ) is controlled by a first gate control line shared between one row of pixels. 6. 如权利要求1或2所述的装置,其中第一和第二电容(C1,C2)串联连接在驱动晶体管(TD)的栅极与源极之间。6. The device as claimed in claim 1 or 2, wherein the first and the second capacitance (C 1 , C 2 ) are connected in series between the gate and the source of the driving transistor (T D ). 7. 如权利要求6所述的装置,其中每个像素还包括连接在第二电容(C2)两端的第三晶体管(A3)。7. A device as claimed in claim 6, wherein each pixel further comprises a third transistor ( A3 ) connected across the second capacitor ( C2 ). 8. 如权利要求7所述的装置,其中由在一个像素行之间共享的第三栅极控制线来控制第三晶体管。8. The device of claim 7, wherein the third transistor is controlled by a third gate control line shared between one row of pixels. 9. 如权利要求8所述的装置,其中第二和第三栅极控制线包括单个共享的控制线。9. The apparatus of claim 8, wherein the second and third gate control lines comprise a single shared control line. 10. 如权利要求1或2所述的装置,其中第一和第二电容(C1,C2)串联连接在驱动晶体管(TD)的栅极与漏极之间。10. The device as claimed in claim 1 or 2, wherein the first and the second capacitance (C 1 , C 2 ) are connected in series between the gate and the drain of the driving transistor (T D ). 11. 如权利要求10所述的装置,其中每个像素还包括连接在输入端与驱动晶体管(TD)的源极之间的第三晶体管(A3)。11. A device as claimed in claim 10, wherein each pixel further comprises a third transistor ( A3 ) connected between the input terminal and the source of the drive transistor ( TD ). 12. 如权利要求11所述的装置,其中由在一个像素行之间共享的第三栅极控制线来控制第三晶体管(A3)。12. A device as claimed in claim 11, wherein the third transistor ( A3 ) is controlled by a third gate control line shared between one row of pixels. 13. 如权利要求12所述的装置,其中第二和第三栅极控制线包括单个共享的控制线。13. The apparatus of claim 12, wherein the second and third gate control lines comprise a single shared control line. 14. 如权利要求1或2所述的装置,其中每个像素还包括连接在驱动晶体管源极与地电势线之间的第四晶体管(A4)。14. A device as claimed in claim 1 or 2, wherein each pixel further comprises a fourth transistor ( A4 ) connected between the source of the drive transistor and the ground potential line. 15. 如权利要求14所述的装置,其中由在一个像素行之间共享的第四栅极控制线来控制第四晶体管(A4)。15. A device as claimed in claim 14, wherein the fourth transistor ( A4 ) is controlled by a fourth gate control line shared between one row of pixels. 16. 如权利要求1或2所述的装置,其中所述所述第一和第二电容(C1,C2)连接在驱动晶体管(TD)的栅极与源极之间,并且驱动晶体管的源极连接到地线。16. The device according to claim 1 or 2, wherein said first and second capacitors (C 1 , C 2 ) are connected between the gate and source of a drive transistor (T D ) and drive The source of the transistor is connected to ground. 17. 如权利要求16所述的装置,其中驱动晶体管(TD)的漏极与显示元件(2)的一端相连,显示元件的另一端与电源线相连。17. The device as claimed in claim 16, wherein the drain of the driving transistor (T D ) is connected to one end of the display element (2), and the other end of the display element is connected to a power line. 18. 如权利要求16所述的装置,其中每个像素还包括连接在第二电容(C2)两端的第二短路晶体管(A2)。18. A device as claimed in claim 16, wherein each pixel further comprises a second short-circuit transistor ( A2 ) connected across the second capacitor ( C2 ). 19. 如权利要求16所述的装置,其中每个像素还包括连接在驱动晶体管的栅极与漏极之间的第三晶体管(A3)。19. A device as claimed in claim 16, wherein each pixel further comprises a third transistor ( A3 ) connected between the gate and drain of the drive transistor. 20. 如权利要求19所述的装置,其中由在一个像素行之间共享的栅极控制线来控制第三晶体管(A3)。20. A device as claimed in claim 19, wherein the third transistor ( A3 ) is controlled by a gate control line shared between one row of pixels. 21. 如权利要求16所述的装置,其中每个像素还包括连接在电源线(50)与驱动晶体管的漏极之间的第四充电晶体管(A4)。21. The device as claimed in claim 16, wherein each pixel further comprises a fourth charge transistor ( A4 ) connected between the power supply line (50) and the drain of the drive transistor. 22. 如权利要求1或2所述的装置,其中每个像素还包括第二驱动晶体管(TS)。22. A device as claimed in claim 1 or 2, wherein each pixel further comprises a second drive transistor ( TS ). 23. 如权利要求22所述的装置,其中在电源线(26)与第一驱动晶体管(TD)之间提供所述第二驱动晶体管。23. The device as claimed in claim 22, wherein the second drive transistor is provided between a power supply line (26) and the first drive transistor ( TD ). 24. 如权利要求23所述的装置,其中第二驱动晶体管的栅极与漏极连接在一起。24. The apparatus of claim 23, wherein the gate and drain of the second driving transistor are connected together. 25. 如权利要求22所述的装置,其中在第一驱动晶体管(TD)与显示元件(2)之间提供所述第二驱动晶体管。25. A device as claimed in claim 22, wherein the second drive transistor is provided between the first drive transistor ( TD ) and the display element (2). 26. 如权利要求25所述的装置,其中晶体管(A5)连接在第二驱动晶体管(TS)的栅极与漏极之间。26. A device as claimed in claim 25, wherein the transistor ( A5 ) is connected between the gate and the drain of the second driving transistor ( TS ). 27. 如权利要求25所述的装置,其中每个像素还包括连接在第二驱动晶体管(TS)的栅极与地电势线之间的第四晶体管(A4)。27. A device as claimed in claim 25, wherein each pixel further comprises a fourth transistor ( A4 ) connected between the gate of the second drive transistor ( TS ) and the ground potential line. 28. 如权利要求1或2所述的装置,其中驱动晶体管(TD)包括n型晶体管。28. The device as claimed in claim 1 or 2, wherein the drive transistor (T D ) comprises an n-type transistor. 29. 如权利要求1或2所述的装置,其中所述显示元件包括电致发光(EL)显示元件。29. The device of claim 1 or 2, wherein the display element comprises an electroluminescent (EL) display element. 30. 如权利要求29所述的装置,其中所述电致发光(EL)显示元件包括电致磷光有机电致发光显示元件。30. The device of claim 29, wherein the electroluminescent (EL) display element comprises an electrophosphorescent organic electroluminescent display element. 31. 一种用于驱动一个包括电流驱动的发光显示像素阵列的有源矩阵显示装置的方法,其中每个像素包括一个显示元件(2)和一个用于驱动电流流过该显示元件的非晶硅驱动晶体管(TD),该方法对于每个像素包括:31. A method for driving an active matrix display device comprising an array of current-driven light-emitting display pixels, wherein each pixel comprises a display element (2) and an amorphous Silicon drive transistor (T D ), the method for each pixel consists of: 驱动电流通过驱动晶体管(TD)到达地,并将第一电容(C1)充电到所产生的栅极-源极电压;drive current through the drive transistor (T D ) to ground and charge the first capacitor (C 1 ) to the resulting gate-source voltage; 对第一电容(C1)进行放电,直至驱动晶体管截止为止,从而第一电容存储阈值电压;Discharging the first capacitor (C 1 ) until the drive transistor is turned off, so that the first capacitor stores a threshold voltage; 将在驱动晶体管的栅极与源极或漏极之间与第一电容串联的第二电容(C2)充电到数据输入电压;以及charging a second capacitor (C 2 ) connected in series with the first capacitor between the gate and source or drain of the drive transistor to the data input voltage; and 利用从第一和第二电容(C1,C2)两端的电压得出的栅极电压,使用驱动晶体管(TD)来驱动电流流过显示元件。A drive transistor (T D ) is used to drive current through the display element using a gate voltage derived from the voltage across the first and second capacitors (C 1 , C 2 ). 32. 如权利要求31所述的方法,其中通过将连接在数据线与像素输入端之间的地址晶体管(A1)切换成导通,实施所述对第二电容进行充电的步骤。32. A method as claimed in claim 31, wherein said step of charging the second capacitance is carried out by switching an address transistor ( A1 ) connected between the data line and the pixel input into conduction. 33. 如权利要求32所述的方法,其中通过公共行地址控制线将一行中每个像素的地址晶体管同时切换成导通。33. The method of claim 32, wherein the address transistors of each pixel in a row are simultaneously switched on by a common row address control line. 34. 如权利要求33所述的方法,其中在用于相邻行的地址晶体管被截止之后立即将用于一行像素的地址晶体管导通。34. The method of claim 33, wherein an address transistor for a row of pixels is turned on immediately after an address transistor for an adjacent row is turned off. 35. 如权利要求31所述的方法,其中对每个像素的第一电容(C1)进行充电,以在显示帧周期的初始阈值测量周期存储像素驱动晶体管的相应阈值电压,帧周期的像素驱动周期在阈值测量周期之后。35. A method as claimed in claim 31 , wherein the first capacitor (C 1 ) of each pixel is charged to store the corresponding threshold voltage of the pixel drive transistor during the initial threshold measurement period of the display frame period, the pixel of the frame period The drive period follows the threshold measurement period.
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