[go: up one dir, main page]

CN100405506C - Anisotropic Conductive Materials - Google Patents

Anisotropic Conductive Materials Download PDF

Info

Publication number
CN100405506C
CN100405506C CNB2004100525453A CN200410052545A CN100405506C CN 100405506 C CN100405506 C CN 100405506C CN B2004100525453 A CNB2004100525453 A CN B2004100525453A CN 200410052545 A CN200410052545 A CN 200410052545A CN 100405506 C CN100405506 C CN 100405506C
Authority
CN
China
Prior art keywords
anisotropic conductive
polyaniline
adhesive
conductive material
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100525453A
Other languages
Chinese (zh)
Other versions
CN1779868A (en
Inventor
陈杰良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Original Assignee
Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hongfujin Precision Industry Shenzhen Co Ltd, Hon Hai Precision Industry Co Ltd filed Critical Hongfujin Precision Industry Shenzhen Co Ltd
Priority to CNB2004100525453A priority Critical patent/CN100405506C/en
Publication of CN1779868A publication Critical patent/CN1779868A/en
Application granted granted Critical
Publication of CN100405506C publication Critical patent/CN100405506C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06Polymers
    • H01L2924/078Adhesive characteristics other than chemical
    • H01L2924/0781Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811Extrinsic, i.e. with electrical conductive fillers

Landscapes

  • Wire Bonding (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

The present invention relates to an anisotropy conducting material for electronic packaging, which comprises an insulating adhesive and conducting particles dispersed on the adhesive, wherein the conducting particles are carbon nanotubes mixed with metal particles and polyaniline. The polyaniline can be the polyaniline containing metallic ions, and hydrogen atoms in the molecule chain of the polyaniline can be displaced by the metallic ions. Because the carbon nanotubes-conducting particles which have nanometer dimension and are mixed with the metal particles are adopted, the anisotropy conducting material of the present invention has large contacting surface area when being connected with a semiconductor element and a substrate. Because the polyaniline has good electric conductivity and adhesiveness, the carbon nanotubes can be well electrically bonded with the semiconductor element and the substrate.

Description

各向异性导电材料 Anisotropic Conductive Materials

【技术领域】 【Technical field】

本发明涉及一种电子封装材料,尤其涉及一种应用于各向异性导电粘接材料。The invention relates to an electronic packaging material, in particular to an anisotropic conductive adhesive material.

【背景技术】 【Background technique】

从20世纪80年代中后期开始,电子产品正朝着便捷式、小型化、网络化和多媒体化方向发展。为了满足市场需要,电子封装技术必须向高密度化、高速度化方向发展。电子封装主要包括片式元件封装和IC封装。Since the middle and late 1980s, electronic products have been developing in the direction of portability, miniaturization, networking and multimedia. In order to meet the needs of the market, electronic packaging technology must develop in the direction of high density and high speed. Electronic packaging mainly includes chip component packaging and IC packaging.

片式元件封装是应用最早、产量最大的表面组装元件,其封装主要采用表面粘接技术(Surface Mounted Technology,SMT)。Chip component packaging is the earliest surface mount component with the largest output, and its packaging mainly adopts Surface Mounted Technology (SMT).

IC封装从1958年发展至今,期间发展出多种封装技术:第一代封装是插孔元件封装型式(Pin Through Hole,PTH);第二代封装,即表面粘接技术,其是通过以缩小封装体积和增加I/O脚数,但基本上两者都以导线架为载体,利用金线连接芯片电极和导线架上的引脚,属于外围的封装方式,在封装体积的缩减和I/O脚数的增加上仍有其限制;第三代封装,为面矩阵式(AreaArray),由于使用面矩阵封装以及有机基板载体的引进,大幅增加了I/O脚数、高速率、高功率以及超薄型化的要求;第四代封装,为裸晶封装(Bare Die),是采用将裸晶直接放入封装基质中,避免了损害芯片效率的焊接过程以及影响硅核性能的溶化步骤。其主要包括两种封装方式:一种是板载芯片技术(Chip on Board,COB),另一种是覆晶技术(Flip Chip)。IC packaging has been developed since 1958, during which a variety of packaging technologies have been developed: the first generation of packaging is the pin through hole component packaging type (Pin Through Hole, PTH); the second generation of packaging, that is, surface bonding technology, is adopted to shrink Package volume and increase the number of I/O pins, but basically both use the lead frame as the carrier, use gold wires to connect the chip electrodes and the pins on the lead frame, which belongs to the peripheral packaging method, in the reduction of package volume and I/O The increase in the number of O pins still has its limitations; the third-generation package is AreaArray. Due to the use of area matrix packaging and the introduction of organic substrate carriers, the number of I/O pins, high speed, and high power have been greatly increased. And ultra-thin requirements; the fourth generation of packaging, Bare Die, is to put the bare die directly into the packaging matrix, avoiding the welding process that damages the efficiency of the chip and the melting step that affects the performance of the silicon core . It mainly includes two packaging methods: one is chip on board technology (Chip on Board, COB), and the other is flip chip technology (Flip Chip).

随着IC封装技术的演进,在芯片粘接方面也从采用打线接合(WireBonding)到卷带式自动接合(Tape Automated Bonding,TAB),一直演进到现在的覆晶接合(Flip Chip Bonding)。With the evolution of IC packaging technology, the chip bonding has also evolved from Wire Bonding to Tape Automated Bonding (TAB) to the current Flip Chip Bonding.

打线接合是最早也是目前应用最广的技术,该技术首先将芯片固定在导线架上,再以细金属线将芯片上的电路和导线架上的引脚相连接。卷带式自动接合是将芯片与高分子卷带上的金属电路相连接。覆晶接合主要是于芯片的金属垫上生成I/O凸块,而于基板上生成与I/O凸块相对应的焊点,接着将芯片翻转对准基板上的对应焊点,进而将芯片与基板所有I/O点进行接合。Wire bonding is the earliest and most widely used technology. This technology first fixes the chip on the lead frame, and then connects the circuit on the chip with the pins on the lead frame with thin metal wires. Tape-and-reel automatic bonding is to connect the chip to the metal circuit on the polymer tape. Flip-chip bonding is mainly to generate I/O bumps on the metal pad of the chip, and generate solder joints corresponding to the I/O bumps on the substrate, and then flip the chip to align with the corresponding solder joints on the substrate, and then place the chip Bonds to all I/O points on the substrate.

但是,上述芯片粘接方法中,都只能点对点进行焊接,所以具有焊接工艺复杂,速度慢的缺点。However, in the above chip bonding methods, only point-to-point soldering can be performed, so the soldering process is complicated and the speed is slow.

1997年,日本新力化学公司开发一种能将若干电极一并连接的各向异性导电膜(Anisotropic Conducting Film,ACF)(下文简称ACF)并将其商品化,其最初应用于计算器用液晶显示器(Liquid Crystal Display,LCD)与碳印刷配线的连接,后来普及应用于LCD与软式印刷电路板(Flexible Print Circuit,FPC)的连接。目前,ACF广泛应用于以TAB方式装配的大型、中型LCD模块,以及应用于COB和Flip Chip的连接。In 1997, Japan's Xinli Chemical Co., Ltd. developed and commercialized an anisotropic conductive film (Anisotropic Conducting Film, ACF) (hereinafter referred to as ACF) that can connect several electrodes together. It was initially applied to liquid crystal displays for calculators ( The connection between Liquid Crystal Display (LCD) and carbon printed wiring was later popularized for the connection between LCD and Flexible Printed Circuit (FPC). At present, ACF is widely used in large and medium-sized LCD modules assembled in TAB mode, as well as in the connection of COB and Flip Chip.

ACF是指将起导通作用的导电粒子均匀分散到带绝缘性能的粘附性粘合剂中并制备而成的薄膜。其连接原理是,将ACF夹在粘附体端子之间。在此状态下对其加热加压,由此去除端子上过多的粘合剂,利用夹在端子间的导电粒子使其具备导通性能,再通过粘合剂同时维持其粘合性能和对相邻端子间进行绝缘。ACF refers to a film prepared by uniformly dispersing conductive particles that play a conductive role in an adhesive adhesive with insulating properties. The connection principle is that the ACF is sandwiched between the adherend terminals. In this state, heat and pressurize it to remove excess adhesive on the terminal, use the conductive particles sandwiched between the terminals to make it have conduction performance, and then pass the adhesive while maintaining its adhesive performance and resistance. Insulate between adjacent terminals.

1995年7月1日公告的中国台湾专利第250592号揭示一种各向异性导电粘接膜,包含一种绝缘粘附剂、分散于该绝缘粘附剂中的导电粒子,和分散于该绝缘粘附剂中的透明、球形的玻璃粒子。其中的导电粒子为金属粒子,如镍、铝、银等粒子。China Taiwan Patent No. 250592 published on July 1, 1995 discloses an anisotropic conductive adhesive film, comprising an insulating adhesive, conductive particles dispersed in the insulating adhesive, and dispersed in the insulating adhesive. Transparent, spherical glass particles in an adhesive. The conductive particles are metal particles, such as nickel, aluminum, silver and other particles.

1996年6月1日公告的中国台湾专利第277152号揭示一种制造各向异性导电性树脂膜的方法,其包括胶粘导电性颗粒在位于载体上的胶粘层上并固定于其中,和在导电性颗粒间充填与胶粘材料不兼容的树脂,该膜通过均匀分散于平面方向中的导电性颗粒而仅于厚度方向具有导电性,用以在具有微细电极的大量电子零件的对置电极间的电联。其中,该导电性颗粒为覆有金属薄膜的塑料颗粒。China Taiwan Patent No. 277152 published on June 1, 1996 discloses a method of manufacturing an anisotropic conductive resin film, which includes adhering conductive particles on an adhesive layer on a carrier and fixing therein, and The conductive particles are filled with a resin that is incompatible with the adhesive material, and the film has conductivity only in the thickness direction through the conductive particles uniformly dispersed in the plane direction, and is used for facing a large number of electronic parts with fine electrodes. Electrical connections between electrodes. Wherein, the conductive particles are plastic particles covered with a metal film.

2003年3月21日公告的中国台湾专利第525252号揭示一种各向异性导电连接材料,其包含有绝缘性的粘附剂和导电性粒子,该导电性粒子是以金属层包覆高分子核材粒子的表面所形成的粒子,导电性粒子的平均粒径是钝化膜的高度与半导体元件电极的高度的差1.5倍以上。China Taiwan Patent No. 525252 published on March 21, 2003 discloses an anisotropic conductive connecting material, which contains an insulating adhesive and conductive particles. The conductive particles are polymers coated with a metal layer. In the particles formed on the surface of the core material particles, the average particle diameter of the conductive particles is 1.5 times or more the difference between the height of the passivation film and the height of the semiconductor element electrode.

但是,上述先前专利的导电性粒子尺寸都为微米级,该大颗粒的导电粒子与半导体元件和基板连接时,粘附性较差。However, the sizes of the conductive particles in the above-mentioned prior patents are all in the micron order, and the large conductive particles have poor adhesion when connected to semiconductor elements and substrates.

所以,提供一种具有较佳粘附性的纳米级导电颗粒的各向异性导电材料实为必要。Therefore, it is necessary to provide an anisotropic conductive material having nanoscale conductive particles with better adhesion.

【发明内容】 【Content of invention】

本发明的目的在于提供一种具有较佳粘附性的导电颗粒的各向异性导电材料。The object of the present invention is to provide an anisotropic conductive material having conductive particles with better adhesion.

为实现本发明目的,本发明提供一种应用于电子封装的各向异性导电材料,包括绝缘性的粘附剂和分散于该粘附剂的导电粒子,该导电粒子为掺杂有金属粒子和聚苯胺的碳纳米管。To achieve the purpose of the present invention, the present invention provides an anisotropic conductive material applied to electronic packaging, comprising an insulating adhesive and conductive particles dispersed in the adhesive, the conductive particles are doped with metal particles and Carbon nanotubes of polyaniline.

其中,该聚苯胺可为含有金属离子的聚苯胺,其分子链中的氢原子被金属离子置换。Wherein, the polyaniline may be polyaniline containing metal ions, and hydrogen atoms in its molecular chain are replaced by metal ions.

与现有技术相比较,本发明的各向异性导电材料由于采用具有纳米尺寸的掺杂有金属粒子和聚苯胺的碳纳米管导电颗粒,使之与半导体元件和基板连接时具有较大的接触表面积,且置换铜或铁离子后的聚苯胺具有较佳的导电性和粘附性,使碳纳米管更好的电粘接于半导体元件和基板。Compared with the prior art, the anisotropic conductive material of the present invention has a larger contact with the semiconductor element and the substrate due to the use of nano-sized carbon nanotube conductive particles doped with metal particles and polyaniline. The surface area, and the polyaniline after replacing copper or iron ions has better conductivity and adhesion, so that carbon nanotubes can be better electrically bonded to semiconductor elements and substrates.

【附图说明】 【Description of drawings】

图1是本发明的各向异性导电膜示意图。Fig. 1 is a schematic diagram of an anisotropic conductive film of the present invention.

Figure C20041005254500051
2是本发明使用状态的各向异性导电膜示意图。picture
Figure C20041005254500051
2 is a schematic diagram of the anisotropic conductive film in the use state of the present invention.

图3是本发明的ACF应用于半导体封装的连接结构示意图。FIG. 3 is a schematic diagram of the connection structure of the ACF of the present invention applied to a semiconductor package.

图4A至图4F是本发明ACF应用于覆晶封装的步骤示意图。4A to 4F are schematic diagrams of the steps of applying the ACF of the present invention to flip-chip packaging.

【具体实施方式】 【Detailed ways】

下面将结合附图对本发明作进一步的详细说明。The present invention will be further described in detail below in conjunction with the accompanying drawings.

请参阅图1,本发明的各向异性导电膜10,包括绝缘性的粘附剂12和纳米导电粒子14,该纳米导电粒子14分散于粘附剂12。Referring to FIG. 1 , the anisotropic conductive film 10 of the present invention includes an insulating adhesive 12 and nano conductive particles 14 dispersed in the adhesive 12 .

该粘附剂12可为环氧树脂、酚醛树脂、含有氢氧基的聚脂树脂、含有氢氧基的丙烯酸树脂。本发明的粘附剂12于加热或以紫外线(UV)照射下可以硬化的电绝缘树脂均可使用,并无特别的限制。另外,在粘附剂12中可添加硬化剂。基于硬化温度、时间、保持稳定性等考量,优选使用环氧树脂。该环氧树脂可以选自双酚醛型环氧树脂,环氧漆用酚醛树脂或分子内具有至少两个环氧乙烷基的环氧化合物。The adhesive 12 can be epoxy resin, phenolic resin, polyester resin containing hydroxyl groups, or acrylic resin containing hydroxyl groups. The adhesive 12 of the present invention can be any electrically insulating resin that can be cured under heating or ultraviolet (UV) irradiation, and there is no special limitation. In addition, a hardener may be added to the adhesive 12 . Based on the considerations of curing temperature, time, maintaining stability, etc., it is preferable to use epoxy resin. The epoxy resin can be selected from bisphenol-formaldehyde epoxy resins, phenolic resins for epoxy paints or epoxy compounds with at least two oxirane groups in the molecule.

该纳米导电粒子14为掺杂有金属粒子和聚苯胺的碳纳米管,其中,该聚苯胺可为含有金属离子的聚苯胺,其分子链中的氢原子被金属离子置换。该碳纳米管可为柱状的多壁碳纳米管或单壁碳纳米管,其至少一端开口,以利于在碳纳米管内部掺杂金属粒子和聚苯胺,该掺杂金属粒子包括金、银、铜、镍或铁等金属粒子。The nano conductive particles 14 are carbon nanotubes doped with metal particles and polyaniline, wherein the polyaniline can be polyaniline containing metal ions, and the hydrogen atoms in its molecular chain are replaced by metal ions. The carbon nanotubes can be columnar multi-walled carbon nanotubes or single-walled carbon nanotubes, at least one end of which is open to facilitate the doping of metal particles and polyaniline inside the carbon nanotubes. The doped metal particles include gold, silver, Metal particles such as copper, nickel or iron.

本发明的各向异性导电膜10的制备,包括下列步骤:The preparation of the anisotropic conductive film 10 of the present invention comprises the following steps:

首先,提供掺杂金属粒子的碳纳米管,其可由电弧放电法或激光烧蚀法制备。First, carbon nanotubes doped with metal particles are provided, which can be prepared by an arc discharge method or a laser ablation method.

其次,将掺杂金属粒子的碳纳米管与聚苯胺相混合,使聚苯胺渗入碳纳米管内部。该聚苯胺具有较佳的导电性和粘附性,其结构如下式所示:Second, the carbon nanotubes doped with metal particles are mixed with polyaniline, so that the polyaniline penetrates into the interior of the carbon nanotubes. The polyaniline has better conductivity and adhesion, and its structure is shown in the following formula:

Figure C20041005254500061
Figure C20041005254500061

另外,也可将含有金属离子的聚苯胺与掺杂金属粒子的碳纳米管混合。含有金属离子的聚苯胺的制备:将该聚苯胺加于氯化氢溶液中,在适当温度下加入铜、铁、镍或金等金属粒子,可于聚苯胺聚合物的分子链上置换出与氮原子共键的氢原子(如上式所示),生成含有金属离子的聚苯胺,其具有更佳的导电性和粘附性,其结构如下式所示(A表示金属离子):Alternatively, polyaniline containing metal ions and carbon nanotubes doped with metal particles may be mixed. Preparation of polyaniline containing metal ions: add the polyaniline to the hydrogen chloride solution, add metal particles such as copper, iron, nickel or gold at an appropriate temperature, and replace the nitrogen atom with the molecular chain of the polyaniline polymer. Co-bonded hydrogen atoms (as shown in the above formula) generate polyaniline containing metal ions, which has better conductivity and adhesion, and its structure is shown in the following formula (A represents metal ions):

Figure C20041005254500062
Figure C20041005254500062

最后,将掺杂金属粒子和聚苯胺的碳纳米管与粘附剂12相混合,制成ACF。Finally, the carbon nanotubes doped with metal particles and polyaniline were mixed with the adhesive 12 to make ACF.

本发明的ACF使用时,使半导体元件和电路基板的电极互相面对,在其间介入各向异性导电膜10,利用热压技术使两者机构式固定,并使面对的电极之间(Z轴方向)产生电连接,邻接的电极之间(X,Y轴方向)保持绝缘状态。如图2所示,其为本发明处于使用状态的ACF。When the ACF of the present invention is used, the electrodes of the semiconductor element and the circuit substrate are made to face each other, an anisotropic conductive film 10 is interposed therebetween, the two are mechanically fixed by hot pressing technology, and the (Z Axis direction) is electrically connected, and the adjacent electrodes (X, Y axis direction) are kept in an insulated state. As shown in Fig. 2, it is the ACF in use according to the present invention.

请参阅图3,本发明的第一实施例,本发明的ACF应用于半导体封装,ACF连接对象为半导体元件34和电路基板36。Please refer to FIG. 3 , the first embodiment of the present invention, the ACF of the present invention is applied to a semiconductor package, and the ACF is connected to a semiconductor element 34 and a circuit substrate 36 .

半导体元件34一面形成多个电极342,该多个电极342周围具有钝化膜344,其中电极342的厚度比钝化膜344厚度小。该电极342可使用铝、铜等金属,该钝化膜344可由聚醯亚胺树脂、聚苯丙环丁烯等树脂制成。电路基板36,在与该半导体元件34的电极342对应的位置具有多个电极362。该电路基板36可选自环氧树脂、玻璃基板等树脂基板,该多个电极362可选自铝、铜等一般导体。A plurality of electrodes 342 are formed on one side of the semiconductor element 34 , and a passivation film 344 is formed around the plurality of electrodes 342 , wherein the thickness of the electrodes 342 is smaller than the thickness of the passivation film 344 . The electrode 342 can be made of aluminum, copper and other metals, and the passivation film 344 can be made of polyimide resin, polystyrene cyclobutene and other resins. The circuit board 36 has a plurality of electrodes 362 at positions corresponding to the electrodes 342 of the semiconductor element 34 . The circuit substrate 36 can be selected from resin substrates such as epoxy resin and glass substrate, and the plurality of electrodes 362 can be selected from common conductors such as aluminum and copper.

将本发明的ACF放置于被连接构件即半导体元件34和电路基板36之间,该半导体元件34和电路基板36的电极342和362分别互相对准。如图3箭头所示,从半导体元件34和电路基板36两外侧相对加压并加热。在加压并加热下,ACF的电绝缘树脂32具有可塑性,最后使电极与纳米导电粒子31接触,并将多余的电绝缘树脂32集中在未存在有电极342和362的部分。多个纳米导电粒子31与两端的电极342、362充分接触,由于纳米颗粒具有较大的表面积和该纳米导电粒子31内部和端口的聚苯胺具有较佳的粘附性,使半导体元件34和电路基板36具有更佳的粘接效果。加热加压后需要对分散有碳纳米管导电粒子的ACF进行硬化,可通过激光或紫外线(UV)照射ACF,使绝缘树脂32和聚苯胺硬化,最后可获得半导体元件34和电路基板36面对的电极间的电连接,相邻电极间的电绝缘,且半导体元件34和电路基板36之间具有较佳的机械固定。The ACF of the present invention is placed between the connected member, that is, the semiconductor element 34 and the circuit substrate 36 whose electrodes 342 and 362 are aligned with each other, respectively. As indicated by arrows in FIG. 3 , pressure and heat are applied from both outsides of the semiconductor element 34 and the circuit board 36 . Under pressure and heat, the electrical insulating resin 32 of the ACF has plasticity, and finally the electrodes are in contact with the nano conductive particles 31, and the excess electrical insulating resin 32 is concentrated in the part where the electrodes 342 and 362 do not exist. A plurality of conductive nano particles 31 are fully in contact with the electrodes 342, 362 at both ends. Because the nanoparticles have a larger surface area and the polyaniline inside and at the port of the conductive nano particles has better adhesion, the semiconductor element 34 and the circuit The substrate 36 has a better bonding effect. After heating and pressing, it is necessary to harden the ACF dispersed with carbon nanotube conductive particles. The ACF can be irradiated with laser or ultraviolet (UV) to harden the insulating resin 32 and polyaniline, and finally the semiconductor element 34 and the circuit substrate 36 can be obtained. Electrical connection between electrodes, electrical insulation between adjacent electrodes, and better mechanical fixation between the semiconductor element 34 and the circuit substrate 36 .

请一并参阅图4A至图4F,本发明的第二实施例,在覆晶封装技术中,本发明ACF的应用步骤:Please refer to FIG. 4A to FIG. 4F together, the second embodiment of the present invention, in the flip-chip packaging technology, the application steps of the ACF of the present invention:

步骤一,如图4A所示,将电绝缘性的胶粘层42通过涂覆或其它方式形成于基质树脂膜43表面。Step 1, as shown in FIG. 4A , an electrically insulating adhesive layer 42 is formed on the surface of the matrix resin film 43 by coating or other means.

步骤二,如图4B所示,纳米导电粒子41通过胶粘物质的胶粘力分布且固定于该胶粘层42表面。Step 2, as shown in FIG. 4B , the nano conductive particles 41 are distributed and fixed on the surface of the adhesive layer 42 through the adhesive force of the adhesive substance.

步骤三,如图4C所示,将粘附剂溶液填充于纳米导电粒子41间隙。因为纳米导电粒子41固定于胶粘层42,于粘附剂溶液中不移动,所以于涂覆时颗粒不凝聚,颗粒均匀排列于平面上,随后干燥溶剂形成一层粘接层40。粘接层40和分散于该粘接层40的纳米导电粒子41组成本发明的ACF。Step 3, as shown in FIG. 4C , filling the gap of the conductive nano particles 41 with the adhesive solution. Because the nano conductive particles 41 are fixed on the adhesive layer 42 and do not move in the adhesive solution, the particles do not agglomerate during coating, and the particles are uniformly arranged on a plane, and then the solvent is dried to form an adhesive layer 40 . The adhesive layer 40 and the nano conductive particles 41 dispersed in the adhesive layer 40 constitute the ACF of the present invention.

步骤四,如图4D所示,连接电路时,需将粘接层40转移于芯片49表面,该表面设有多个电极490。可将该粘接层40压向芯片49表面,再沿粘接层40和胶粘层42间的接口剥离出胶粘层42。因为粘接层40与胶粘层42物质彼此不兼容,所以其料层容易沿接口彼此分离。Step 4, as shown in FIG. 4D , when connecting the circuit, the adhesive layer 40 needs to be transferred to the surface of the chip 49 , and the surface is provided with a plurality of electrodes 490 . The adhesive layer 40 can be pressed to the surface of the chip 49 , and then the adhesive layer 42 can be peeled off along the interface between the adhesive layer 40 and the adhesive layer 42 . Because the materials of the adhesive layer 40 and the adhesive layer 42 are not compatible with each other, the material layers thereof are easily separated from each other along the interface.

步骤五,如图4E所示,将步骤四制得的粘接层40与芯片49与电路基板48相连接。该电路基板与芯片电极490相应位置设有电极480。通过校准两电路的电极,在压合设备45,46作用下向两电路进行加压并且加热,通过纳米导电粒子41形成电连接。Step five, as shown in FIG. 4E , connect the adhesive layer 40 prepared in step four with the chip 49 and the circuit substrate 48 . The circuit substrate is provided with electrodes 480 corresponding to the chip electrodes 490 . By aligning the electrodes of the two circuits, the two circuits are pressurized and heated under the action of the pressing equipment 45 , 46 , and the electrical connection is formed through the nano conductive particles 41 .

步骤六,如图4F所示,硬化粘接层40和纳米导电粒子41,最后可获得被连接构件面对的电极间的电连接,相邻电极间的电绝缘,且被连接构件间具有较佳的机械固定。Step 6, as shown in FIG. 4F, harden the adhesive layer 40 and the nano-conductive particles 41, and finally the electrical connection between the electrodes facing the connected members can be obtained, the electrical insulation between adjacent electrodes, and the connected members have a relatively high Good mechanical fixation.

本实施例可采用覆晶技术的电路基板包括陶瓷、硅芯片、高分子积层板以及玻璃等。覆晶技术的应用范围包括高阶计算机、PCMCIA卡、军事设备、个人通讯产品、钟表以及液晶显示器等,当覆晶技术应用于液晶显示器上时,由于基板是玻璃,也被称为COG(Chip On Glass)。In this embodiment, the circuit substrates that can adopt the flip-chip technology include ceramics, silicon chips, polymer laminates, and glass. The application range of flip-chip technology includes high-end computers, PCMCIA cards, military equipment, personal communication products, clocks and liquid crystal displays, etc. When flip-chip technology is applied to liquid crystal displays, because the substrate is glass, it is also called COG (Chip On Glass).

可以理解的是,本发明的ACF同样适用于LCD与软式印刷电路板的封装、以TAB方式装配的大型、中型LCD模块封装,以及板载芯片(COB)封装。It can be understood that the ACF of the present invention is also applicable to the packaging of LCD and flexible printed circuit boards, the packaging of large and medium-sized LCD modules assembled in a TAB manner, and the packaging of chip-on-board (COB).

本发明的各向异性导电材料由于采用具有纳米尺寸的掺杂有金属粒子和聚苯胺的碳纳米管导电颗粒,使之与半导体元件和基板连接时具有较大的接触表面积,且置换金属离子后的聚苯胺具有更佳的导电性和粘附性,使碳纳米管更好的电粘接于半导体元件和基板。The anisotropic conductive material of the present invention adopts nanometer-sized carbon nanotube conductive particles doped with metal particles and polyaniline, so that it has a larger contact surface area when it is connected with a semiconductor element and a substrate, and after replacing metal ions Polyaniline has better conductivity and adhesion, which makes carbon nanotubes better electrically bonded to semiconductor components and substrates.

Claims (8)

1. anisotropic conductive material comprises the adhesive of insulating properties and is scattered in the conducting particles of this adhesive, it is characterized in that this conducting particles is the carbon nano-tube that is doped with metallic and polyaniline.
2. anisotropic conductive material as claimed in claim 1 is characterized in that the hydrogen atom in this polyaniline molecule chain is replaced by metal ion.
3. anisotropic conductive material as claimed in claim 1 is characterized in that this adhesive is hardenable electric insulation resin.
4. anisotropic conductive material as claimed in claim 3 is characterized in that this electric insulation resin comprises epoxy resin, phenolic resins, contains the alkyd resin of hydroxy or contains the acrylic resin of hydroxy.
5. anisotropic conductive material as claimed in claim 1 is characterized in that this adhesive is added with curing agent.
6. anisotropic conductive material as claimed in claim 1 is characterized in that carbon nano-tube comprises Single Walled Carbon Nanotube and multi-walled carbon nano-tubes.
7. anisotropic conductive material as claimed in claim 1 is characterized in that metallic comprises gold, silver, copper, nickel or ferrous metal particle.
8. anisotropic conductive material as claimed in claim 2 is characterized in that this metal ion comprises copper, iron, nickel or gold ion.
CNB2004100525453A 2004-11-26 2004-11-26 Anisotropic Conductive Materials Expired - Fee Related CN100405506C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2004100525453A CN100405506C (en) 2004-11-26 2004-11-26 Anisotropic Conductive Materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2004100525453A CN100405506C (en) 2004-11-26 2004-11-26 Anisotropic Conductive Materials

Publications (2)

Publication Number Publication Date
CN1779868A CN1779868A (en) 2006-05-31
CN100405506C true CN100405506C (en) 2008-07-23

Family

ID=36770128

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100525453A Expired - Fee Related CN100405506C (en) 2004-11-26 2004-11-26 Anisotropic Conductive Materials

Country Status (1)

Country Link
CN (1) CN100405506C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110085558A (en) * 2018-01-26 2019-08-02 力成科技股份有限公司 Encapulant composition, semiconductor packages and its manufacturing method

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI287805B (en) 2005-11-11 2007-10-01 Ind Tech Res Inst Composite conductive film and semiconductor package using such film
JP5764732B2 (en) * 2008-10-03 2015-08-19 島根県 Heat resistant high thermal conductive adhesive
WO2010115085A1 (en) * 2009-04-03 2010-10-07 Alcoa Inc. Conductive solid film material
DE102010002447A1 (en) * 2010-02-26 2011-09-01 Tutech Innovation Gmbh Adhesive with anisotropic electrical conductivity and process for its preparation and use
CN107342117B (en) * 2017-07-18 2019-03-12 深圳市华星光电技术有限公司 Anisotropic conductive film and preparation method thereof
CN109796903B (en) * 2019-03-08 2024-06-21 深圳市润沃自动化工程有限公司 Anisotropic conductive adhesive structure and production method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002008451A (en) * 2000-06-23 2002-01-11 Ryoji Mishima Anisotropic conductive polymer
CN1343755A (en) * 2001-10-26 2002-04-10 中国科学院长春应用化学研究所 Process for preparing liquid crystal orientated film from polyimide containing photosensitive terminating agent
US6632380B1 (en) * 1997-07-25 2003-10-14 Zipperling Kessler & Co. (Gmbh & Co.) Chemical compounds made of intrinsically conductive polymers and metals
CN1522287A (en) * 2001-06-29 2004-08-18 3M Devices, compositions and methods for adhesives with enhanced performance by adding organophilic clay components

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6632380B1 (en) * 1997-07-25 2003-10-14 Zipperling Kessler & Co. (Gmbh & Co.) Chemical compounds made of intrinsically conductive polymers and metals
JP2002008451A (en) * 2000-06-23 2002-01-11 Ryoji Mishima Anisotropic conductive polymer
CN1522287A (en) * 2001-06-29 2004-08-18 3M Devices, compositions and methods for adhesives with enhanced performance by adding organophilic clay components
CN1343755A (en) * 2001-10-26 2002-04-10 中国科学院长春应用化学研究所 Process for preparing liquid crystal orientated film from polyimide containing photosensitive terminating agent

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110085558A (en) * 2018-01-26 2019-08-02 力成科技股份有限公司 Encapulant composition, semiconductor packages and its manufacturing method

Also Published As

Publication number Publication date
CN1779868A (en) 2006-05-31

Similar Documents

Publication Publication Date Title
TWI323901B (en) Anisotropic conductive material
TWI452401B (en) Anisotropic conductive film, and connected structure and manufacturing method for the same
JP4513024B2 (en) Multilayer anisotropic conductive film
JP2001011503A (en) Novel conductive fine particles and uses of the fine particles
WO2013129437A1 (en) Method for manufacturing connection element, and anisotropic electroconductive adhesive
CN100405506C (en) Anisotropic Conductive Materials
JP3847693B2 (en) Manufacturing method of semiconductor device
JP5816456B2 (en) Anisotropic conductive connection material, film laminate, connection method and connection structure
JP3581618B2 (en) Conductive fine particles, anisotropic conductive adhesive, and conductive connection structure
JP2010251336A (en) Anisotropic conductive film and method for manufacturing connection structure using the same
JP2001164210A (en) Anisotropic conductive film and electronic equipment using the same
KR101157599B1 (en) Conductive particle for anisotropic conductive film and anisotropic conductive film including the conductive particle
JP2004335663A (en) Method for manufacturing different direction electric conduction film
KR100735211B1 (en) Anisotropic conductive film with conductive particles with excellent connection reliability
KR101211753B1 (en) Method and device for connecting electronic parts using high frequency electromagnetic field
JP2004131780A (en) Metal fine particles and adhesives, films and electric circuit boards using the fine particles
JP5608504B2 (en) Connection method and connection structure
JP4378788B2 (en) IC chip connection method
CN113785027A (en) Adhesive composition
CN217405124U (en) Novel anisotropic conductive film
KR20090094622A (en) Conductive ball with easily pressed down, method of mamufacturing thereof and anisotropic conductive film using the same
JP2007018760A (en) Anisotropic conduction film for glass base plate connection
JP2005019274A (en) Method for producing anisotropic conductive film
Matsuda et al. Interconnection technologies of anisotropic conductive films and their application to flexible electronics
JPS63299242A (en) Connection of semiconductor device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080723

Termination date: 20171126

CF01 Termination of patent right due to non-payment of annual fee