CN100392845C - Packaging structure with high adhesiveness between substrate and packaging colloid - Google Patents
Packaging structure with high adhesiveness between substrate and packaging colloid Download PDFInfo
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- CN100392845C CN100392845C CNB200410090685XA CN200410090685A CN100392845C CN 100392845 C CN100392845 C CN 100392845C CN B200410090685X A CNB200410090685X A CN B200410090685XA CN 200410090685 A CN200410090685 A CN 200410090685A CN 100392845 C CN100392845 C CN 100392845C
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- conductive
- substrate
- core layer
- encapsulant
- wire
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- 239000000758 substrate Substances 0.000 title claims abstract description 27
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 22
- 239000000084 colloidal system Substances 0.000 title abstract description 9
- 229910000679 solder Inorganic materials 0.000 claims abstract description 30
- 239000012792 core layer Substances 0.000 claims abstract description 27
- 239000008393 encapsulating agent Substances 0.000 claims abstract description 25
- 239000010410 layer Substances 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 239000000853 adhesive Substances 0.000 claims abstract description 5
- 230000001070 adhesive effect Effects 0.000 claims abstract description 5
- 230000004308 accommodation Effects 0.000 claims description 6
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Abstract
Description
技术领域 technical field
本发明涉及一种封装结构,详言之,本发明涉及一种可增加基板和封装胶体间粘着性的封装结构。The invention relates to a packaging structure, in particular, the invention relates to a packaging structure which can increase the adhesion between the substrate and the packaging colloid.
背景技术 Background technique
参考图1和图2,其分别显示了常规封装结构的上视和剖视示意图,其中图1并未显示封装胶体,图2是图1中2-2方向的剖视图。该常规封装结构1包括一基板11、一半导体芯片12、多条接合线13、一封装胶体14和多个焊球15。Referring to FIG. 1 and FIG. 2 , they respectively show a top view and a schematic cross-sectional view of a conventional packaging structure, wherein FIG. 1 does not show the encapsulant, and FIG. 2 is a cross-sectional view along the direction 2-2 in FIG. 1 . The
该基板11包括一芯层(core layer)111、多个导电迹线(trace)112和一阻焊层(solder mask)113。该芯层111通常由环氧树脂、聚亚酰胺树脂、BT树脂或FR4树脂等常规材质所制成,其具有一上表面和一下表面,该上表面具有一芯片容置区。该等导电迹线112位于该芯层111的上表面,各个该等导电迹线112包含一导电指(finger)1121、一连接线1122和一导通孔(via)114。该导电指1121用以线接合,该连接线1122用以电气连接该导电指1121至该导通孔114。该阻焊层113位于该芯层111上表面,且完全覆盖该等连接线1122和导通孔114,只暴露出该等导电指1121。因此在图1中,该等连接线1122和导通孔114都以虚线表示。The
该半导体芯片12通过一粘着层(图中未示)而贴附于该芯片容置区,该半导体芯片12具有多个接合垫(bonding pad)121。该等接合线13用以电气连接该等接合垫121和该等导电指1121。该封装胶体14包覆该基板11上表面、该半导体芯片12、该等接合线13和部分该阻焊层113。The
该等焊球15位于该芯层111的下表面且暴露于该封装胶体14之外,用以电气连接该半导体芯片12至外界装置。The
参考图3,其显示图1中3-3方向的剖视示意图。由图中可看出,由于该阻焊层113覆盖住该连接线1122,因此在封胶作业完成后,该封装胶体14接触该阻焊层113。因为该封装胶体14与该阻焊层113两种材质间的结合强度不高,加上该阻焊层113覆盖该连接线1122后所形成的平面比较平坦,所以该封装胶体14容易从该基板11剥离,从而造成封装失败。Referring to FIG. 3 , it shows a schematic cross-sectional view along direction 3-3 in FIG. 1 . It can be seen from the figure that since the
因此,有必要提供一种创新且具进步性的高粘着性的封装结构来解决上述问题。Therefore, it is necessary to provide an innovative and progressive packaging structure with high adhesiveness to solve the above problems.
发明内容 Contents of the invention
本发明的目的在于提供一种高粘着性的封装结构,其中的基板上的导电迹线不完全被阻焊层覆盖住,也就是说该导电迹线暴露出一部分而在封胶作业后与封装胶体相接触。因此,可增加封装胶体和基板的粘着力,使得该封装胶体不易从该基板剥离。The object of the present invention is to provide a highly adhesive packaging structure, wherein the conductive traces on the substrate are not completely covered by the solder mask, that is to say, the conductive traces are partially exposed and will be separated from the package after the sealing operation. colloidal contact. Therefore, the adhesive force between the encapsulant and the substrate can be increased, so that the encapsulant is not easily peeled off from the substrate.
为达到上述目的,本发明提供一种高粘着性的封装结构,其包括:一基板、半导体芯片、多条接合线和一封装胶体。To achieve the above object, the present invention provides a highly adhesive packaging structure, which includes: a substrate, a semiconductor chip, a plurality of bonding wires and an encapsulating compound.
该基板包括一芯层、多个导电迹线和一阻焊层。该芯层具有一上表面,该上表面具有一芯片容置区。该等导电迹线位于该芯层的上表面,各个该等导电迹线包含一导电指和一连接线,该导电指用以线接合,该连接线用以电气连接该导电指至一预定位置,该连接线包括一内侧部分和一外侧部分。该阻焊层位于该芯层上表面的外缘周围,且覆盖该连接线的外侧部分。The substrate includes a core layer, a plurality of conductive traces and a solder resist layer. The core layer has an upper surface, and the upper surface has a chip accommodation area. The conductive traces are located on the upper surface of the core layer, each of the conductive traces includes a conductive finger and a connecting wire, the conductive finger is used for wire bonding, and the connecting wire is used to electrically connect the conductive finger to a predetermined position , the connection line includes an inner portion and an outer portion. The solder resist layer is located around the outer edge of the upper surface of the core layer and covers the outer portion of the connecting wire.
该半导体芯片通过一粘着层而贴附于该芯片容置区,该半导体芯片具有多个接合垫。该等接合线用以电气连接该等接合垫和该等导电指。该封装胶体包覆该基板上表面、该半导体芯片、该等接合线和部分该阻焊层,该封装胶体直接接触该连接线的内侧部分。The semiconductor chip is attached to the chip accommodation area through an adhesive layer, and the semiconductor chip has a plurality of bonding pads. The bonding wires are used to electrically connect the bonding pads and the conductive fingers. The packaging colloid covers the upper surface of the substrate, the semiconductor chip, the bonding wires and part of the solder resist layer, and the packaging colloid directly contacts the inner part of the connecting wires.
附图说明 Description of drawings
图1显示常规封装结构的上视示意图,其中并未显示封装胶体;Figure 1 shows a schematic top view of a conventional packaging structure, where the packaging colloid is not shown;
图2显示图1中2-2方向的剖视示意图;Fig. 2 shows a schematic cross-sectional view of direction 2-2 in Fig. 1;
图3显示图1中3-3方向的剖视示意图;Figure 3 shows a schematic cross-sectional view of the direction 3-3 in Figure 1;
图4显示根据本发明优选实施例的封装结构的上视示意图,其中并未显示封装胶体;Fig. 4 shows a schematic top view of a packaging structure according to a preferred embodiment of the present invention, wherein the packaging colloid is not shown;
图5显示图4中5-5方向的剖视示意图;和Figure 5 shows a schematic cross-sectional view of the direction 5-5 in Figure 4; and
图6显示图4中6-6方向的剖视示意图。FIG. 6 shows a schematic cross-sectional view along the direction 6-6 in FIG. 4 .
具体实施方式 Detailed ways
参考图4和图5,其分别显示根据本发明优选实施例的封装结构的上视和剖视示意图,其中图4并未显示封装胶体。该封装结构2包括一基板21、一半导体芯片22、多条接合线23、一封装胶体24和多个焊球25。Referring to FIG. 4 and FIG. 5 , they respectively show a top view and a schematic cross-sectional view of a package structure according to a preferred embodiment of the present invention, wherein FIG. 4 does not show the encapsulant. The
该基板21包括一芯层211、多个导电迹线212和一阻焊层213。该芯层211通常由环氧树脂、聚亚酰胺树脂、BT树脂或FR4树脂等常规材质所制成,其具有一上表面和一下表面,该上表面具有一芯片容置区。该等导电迹线212位于该芯层211的上表面,各个该等导电迹线212包含一导电指2121和一连接线2122,该导电指2121用以线接合,该连接线2122用以电气连接该导电指2121至一预定位置,该预定位置通常是一导通孔214的位置。该连接线2122可以分为一内侧部分2122a和一外侧部分2122b,该内侧部分2122a连接至该导电指2121,该外侧部分2122b连接至该导通孔214。该阻焊层213位于该芯层211上表面的外缘周围,且覆盖该连接线2122的外侧部分2122b,也就是说该连接线2122的内侧部分2122a并未被该阻焊层213所覆盖,该连接线2122的内侧部分2122a暴露于该阻焊层213之外。因此,该连接线2122的内侧部分2122a是以实线表示,该连接线2122的外侧部分2122b是以虚线表示。The
该半导体芯片22是通过一粘着层而贴附于该芯片容置区,该半导体芯片22具有多个接合垫221。该等接合线23用以电气连接该等接合垫221和该等导电指2121。该封装胶体24包覆该基板21上表面、该半导体芯片22、该等接合线23和部分该阻焊层213,该封装胶体24直接接触该连接线2122的内侧部分2122a。该等焊球25位于该芯层211的下表面且暴露于该封装胶体24之外,用以电气连接该半导体芯片22至外界装置。The
参考图6,其显示图4中6-6方向的剖视示意图。由图中可看出,由于该阻焊层213并未覆盖该连接线2122的内侧部分2122a,因此在封胶作业完成后,该封装胶体24直接接触该连接线2122的内侧部分2122a和该芯层211的上表面。因为该封装胶体24与该芯层211间的结合强度优于该封装胶体24与该阻焊层213间的结合强度,加上该连接线2122的内侧部分2122a所形成的凹凸外形可增加表面粗糙度,所以该封装胶体24不易从该基板21剥离。Referring to FIG. 6 , it shows a schematic cross-sectional view along direction 6-6 in FIG. 4 . It can be seen from the figure that since the
上述实施例仅为说明本发明的原理和其功效,而非用以限制本发明。因此,所属领域技术人员可在不违背本发明的精神的情况下对上述实施例进行修改和变化。本发明的权利范围应如后述的权利要求所列。The above-mentioned embodiments are only for illustrating the principles and effects of the present invention, but not for limiting the present invention. Therefore, those skilled in the art can make modifications and changes to the above-described embodiments without departing from the spirit of the present invention. The scope of rights of the present invention should be listed in the following claims.
Claims (6)
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CNB200410090685XA CN100392845C (en) | 2004-11-12 | 2004-11-12 | Packaging structure with high adhesiveness between substrate and packaging colloid |
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CNB200410090685XA CN100392845C (en) | 2004-11-12 | 2004-11-12 | Packaging structure with high adhesiveness between substrate and packaging colloid |
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CN101882607B (en) * | 2009-05-08 | 2012-06-13 | 日月光半导体制造股份有限公司 | Packaging structure of chip with conductor layer |
TWI447873B (en) * | 2011-12-21 | 2014-08-01 | 矽品精密工業股份有限公司 | Package structure, package substrate and method of forming same |
US8633588B2 (en) * | 2011-12-21 | 2014-01-21 | Mediatek Inc. | Semiconductor package |
TWI822230B (en) * | 2022-08-05 | 2023-11-11 | 友達光電股份有限公司 | Luminous panel |
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CN1355568A (en) * | 2000-11-27 | 2002-06-26 | 矽品精密工业股份有限公司 | Chip Stack Package Structure |
TW533518B (en) * | 2002-05-21 | 2003-05-21 | Siliconware Precision Industries Co Ltd | Substrate for carrying chip and semiconductor package having the same |
TW564534B (en) * | 2002-10-14 | 2003-12-01 | Siliconware Precision Industries Co Ltd | Chip carrier |
US20040084205A1 (en) * | 2002-11-05 | 2004-05-06 | Siliconware Precision Industries, Ltd., | Warpage-preventive circuit board and method for fabricating the same |
CN1505126A (en) * | 2002-11-29 | 2004-06-16 | ӡ�����Ƽ��ɷ�����˾ | Integrated circuit manufacturing method provided with rewiring parts and corresponding integrated circuit |
CN1525544A (en) * | 2003-02-24 | 2004-09-01 | 三星电机株式会社 | Package substrate manufactured using electrolytic leadless plating process, and method for manufacturing the same |
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CN1355568A (en) * | 2000-11-27 | 2002-06-26 | 矽品精密工业股份有限公司 | Chip Stack Package Structure |
TW533518B (en) * | 2002-05-21 | 2003-05-21 | Siliconware Precision Industries Co Ltd | Substrate for carrying chip and semiconductor package having the same |
TW564534B (en) * | 2002-10-14 | 2003-12-01 | Siliconware Precision Industries Co Ltd | Chip carrier |
US20040084205A1 (en) * | 2002-11-05 | 2004-05-06 | Siliconware Precision Industries, Ltd., | Warpage-preventive circuit board and method for fabricating the same |
CN1505126A (en) * | 2002-11-29 | 2004-06-16 | ӡ�����Ƽ��ɷ�����˾ | Integrated circuit manufacturing method provided with rewiring parts and corresponding integrated circuit |
CN1525544A (en) * | 2003-02-24 | 2004-09-01 | 三星电机株式会社 | Package substrate manufactured using electrolytic leadless plating process, and method for manufacturing the same |
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