CN100373641C - Packaging structure of light emitting diode - Google Patents
Packaging structure of light emitting diode Download PDFInfo
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- CN100373641C CN100373641C CNB200410059259XA CN200410059259A CN100373641C CN 100373641 C CN100373641 C CN 100373641C CN B200410059259X A CNB200410059259X A CN B200410059259XA CN 200410059259 A CN200410059259 A CN 200410059259A CN 100373641 C CN100373641 C CN 100373641C
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- Prior art keywords
- conductive layer
- led
- emitting diode
- package structure
- depressed part
- Prior art date
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Links
- 238000004806 packaging method and process Methods 0.000 title abstract 6
- 230000000994 depressogenic effect Effects 0.000 claims description 27
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 23
- 238000005452 bending Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 19
- 239000003822 epoxy resin Substances 0.000 claims description 10
- 229920000647 polyepoxide Polymers 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 5
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- -1 acryl Chemical group 0.000 claims description 5
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims description 5
- 239000000292 calcium oxide Substances 0.000 claims description 5
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 5
- 239000003365 glass fiber Substances 0.000 claims description 5
- 239000000741 silica gel Substances 0.000 claims description 5
- 229910002027 silica gel Inorganic materials 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 230000009286 beneficial effect Effects 0.000 claims description 2
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- KGNDCEVUMONOKF-UGPLYTSKSA-N benzyl n-[(2r)-1-[(2s,4r)-2-[[(2s)-6-amino-1-(1,3-benzoxazol-2-yl)-1,1-dihydroxyhexan-2-yl]carbamoyl]-4-[(4-methylphenyl)methoxy]pyrrolidin-1-yl]-1-oxo-4-phenylbutan-2-yl]carbamate Chemical compound C1=CC(C)=CC=C1CO[C@H]1CN(C(=O)[C@@H](CCC=2C=CC=CC=2)NC(=O)OCC=2C=CC=CC=2)[C@H](C(=O)N[C@@H](CCCCN)C(O)(O)C=2OC3=CC=CC=C3N=2)C1 KGNDCEVUMONOKF-UGPLYTSKSA-N 0.000 description 2
- 229940125833 compound 23 Drugs 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
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- 150000001875 compounds Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
一种发光二极管封装结构，包含一基座，此基座上具有一凹陷部。此基座包含一导电层，部分固定于基座中且暴露于凹陷部内。导电层其余部分由内而外延伸，并通过一弯折将导电层延伸至基座底面，其中弯折部分的宽度与导电层其它部分相同或更大。发光二极管芯片固定于凹陷部内，并与导电层电性连接。填入模塑构件于凹陷部内，用以封装发光二极管芯片。该发光二极管封装结构可以减少因温度提升因而对光电组件造成损害，进而增加封装结构的使用寿命。此外，因为封装结构在弯折部分较宽，使得封装结构可以用侧面与载板固定。
A light-emitting diode packaging structure includes a base with a recessed portion. The base includes a conductive layer, a portion of which is fixed in the base and exposed in the recessed portion. The remaining portion of the conductive layer extends from the inside to the outside, and is extended to the bottom surface of the base through a bend, wherein the width of the bend is the same as or greater than that of the remaining portion of the conductive layer. The light-emitting diode chip is fixed in the recessed portion and is electrically connected to the conductive layer. A molding component is filled in the recessed portion to package the light-emitting diode chip. The light-emitting diode packaging structure can reduce damage to optoelectronic components caused by temperature rise, thereby increasing the service life of the packaging structure. In addition, because the packaging structure is wider at the bend, the packaging structure can be fixed to a carrier board by the side.
Description
Technical field
The present invention relates to a kind of package structure for LED, particularly a kind of package structure for LED of improvement.
Background technology
In recent years, the use of light-emitting diode component on lighting field presents the progression growth.For example, light-emitting diode is widely used in mobile phone, PDA and other electronic product.
Please refer to the top view and the end view of known a kind of package structure for LED shown in Figure 1A and the 1B.Light-emitting diode chip for backlight unit 18 is fixed in the depressed part of pedestal 11.Pedestal 11 is fixed two conductive layers 16/17, is used for electrically connecting with light-emitting diode chip for backlight unit 18.Because the demand of technology (conductive layer 16/17 is bent easily), the width of the bending part 16a/17a of conductive layer 16/17 all is designed to little than the other parts of conductive layer 16/17.
The trend of electronic products such as following mobile phone and PDA is that the required luminous power of light-emitting diode certainly will be more and more higher.Follow the light-emitting diode high power and what come is the high heat problem of lead.Above-mentioned mentioned package structure for LED, conductive layer 16/17 are the approach of light-emitting diode chip for backlight unit 18 conduction power supplys.Yet the width design of the bending part 16a/17a of conductive layer 16/17 obviously is unable to cope with the demand of high heat.
Therefore, how to design the good package structure for LED of heat radiation, become the challenge that manufacturer need face.
Summary of the invention
Therefore purpose of the present invention is exactly that a kind of package structure for LED of improvement is being provided, in order to increase the useful life of encapsulating structure.
According to above-mentioned purpose of the present invention, a kind of package structure for LED is proposed.This encapsulating structure comprises a pedestal, and has a depressed part on this pedestal.This pedestal also comprises a conductive layer, and partial fixing is in pedestal and be exposed in the depressed part.The conductive layer remainder extends from inside to outside, and by a bending conductive layer is extended to base bottom surface, and wherein the width of bending part is identical with the conductive layer other parts or bigger.Light-emitting diode chip for backlight unit is fixed in the depressed part, and electrically connects with conductive layer.Insert molded structure in depressed part, in order to the encapsulation LED chip.
Specifically, the invention provides a kind of package structure for LED, comprise at least: a pedestal has a depressed part; One conductive layer is fixed in this pedestal and part is exposed in this depressed part, and remainder extends from inside to outside, and by a bending this conductive layer is extended to base bottom surface, and wherein the width of this bending part is identical with these conductive layer other parts; One light-emitting diode chip for backlight unit is fixed in this depressed part, and is connected with this conductive layer; And a molded structure, insert in this depressed part, in order to encapsulate this light-emitting diode chip for backlight unit.
According to the package structure for LED of above-mentioned conception, wherein this pedestal material combination that is epoxy resin, glass fibre, titanium oxide, calcium oxide, liquid crystal polymer, pottery or above-mentioned material.
According to the package structure for LED of above-mentioned conception, wherein this molded structure material combination that is epoxy resin, acryl, silica gel or above-mentioned material.
According to the package structure for LED of above-mentioned conception, wherein this molded structure covers in the mode of pressing mold, encapsulating or adhesion and inserts in this depressed part.
According to the package structure for LED of above-mentioned conception, wherein this conductive layer comprises gold, silver, copper, platinum, aluminium, nickel, tin or magnesium.
The present invention also provides a kind of package structure for LED, comprises at least: a pedestal has a depressed part; One conductive layer is fixed in this pedestal and part is exposed in this depressed part, and remainder extends from inside to outside, and by a bending this conductive layer is extended to base bottom surface, and wherein the width of this bending part is big than this conductive layer other parts width; One light-emitting diode chip for backlight unit is fixed in this depressed part, and is connected with this conductive layer; And a molded structure, insert in this depressed part, in order to encapsulate this light-emitting diode chip for backlight unit.
According to the package structure for LED of above-mentioned conception, wherein this pedestal material combination that is epoxy resin, glass fibre, titanium oxide, calcium oxide, liquid crystal polymer, pottery or above-mentioned material.
According to the package structure for LED of above-mentioned conception, wherein this molded structure material combination that is epoxy resin, acryl, silica gel or above-mentioned material.
According to the package structure for LED of above-mentioned conception, wherein this molded structure covers in the mode of pressing mold, encapsulating or adhesion and inserts in this depressed part.
According to the package structure for LED of above-mentioned conception, wherein these conduction series of strata contain gold, silver, copper, platinum, aluminium, nickel, tin or magnesium.
The present invention also provides a kind of package structure for LED, comprises at least: a pedestal has a depressed part; One conductive layer, be fixed in this pedestal and partly and be exposed in this depressed part, remainder extends from inside to outside, and by one the bending this conductive layer is extended to base bottom surface, wherein the width of this bending part is big than this conductive layer other parts width, and have at least one v-notch, be beneficial to bending process; One light-emitting diode chip for backlight unit is fixed in this depressed part, and is connected with this conductive layer; And a molded structure, insert in this depressed part, in order to encapsulate this light-emitting diode chip for backlight unit.
According to the package structure for LED of above-mentioned conception, wherein this pedestal material combination that is epoxy resin, glass fibre, titanium oxide, calcium oxide, liquid crystal polymer, pottery or above-mentioned material.
According to the package structure for LED of above-mentioned conception, wherein this molded structure material combination that is epoxy resin, acryl, silica gel or above-mentioned material.
According to the package structure for LED of above-mentioned conception, wherein this molded structure covers in the mode of pressing mold, encapsulating or adhesion and inserts in this depressed part.
According to the package structure for LED of above-mentioned conception, wherein this conductive layer comprises gold, silver, copper, platinum, aluminium, nickel, tin or magnesium.
From the above, use package structure for LED of the present invention and can reduce because of temperature increase thereby to photoelectric subassembly and cause damage, and then increase the useful life of encapsulating structure.In addition, because encapsulating structure at the bending part broad, makes encapsulating structure to fix with side and support plate.
Description of drawings
For above and other objects of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and conjunction with figs. is described in detail below:
Figure 1A and 1B illustrate the top view and the end view of known a kind of package structure for LED;
Fig. 2 A and 2B explanation are according to the top view and the end view of a kind of package structure for LED of a preferred embodiment of the present invention;
Fig. 3 explanation is according to the fixing schematic diagram of a kind of package structure for LED of a preferred embodiment of the present invention; And
Fig. 4 explanation is according to the fixing schematic diagram of the another kind of package structure for LED of a preferred embodiment of the present invention.
11: pedestal
15: molded structure
16: conductive layer
16a: conductive layer kink
17: conductive layer
17a: conductive layer kink
18: light-emitting diode chip for backlight unit
21: pedestal
23: welding compound
25: molded structure
26: conductive layer
26a:V type otch
27: conductive layer
27a:V type otch
28: light-emitting diode chip for backlight unit
29: conducting terminal
31a/31b: lead
Embodiment
In order to improve the not good situation of known package structure for LED radiating efficiency, preferred embodiment of the present invention proposes a kind of novel package structure.This novel package structure, its conductive layer does not reduce its width in the part of bending.In addition, easier in order to make bending process, this preferred embodiment is at bending design one v-notch.
Please refer to Fig. 2 A and 2B, it illustrates according to the top view of a kind of package structure for LED of a preferred embodiment of the present invention and end view.Pedestal 21 has a depressed part, as the fixing usefulness of photoelectric subassembly.The material of pedestal 21 can be materials such as epoxy resin, glass fibre, titanium oxide, calcium oxide, liquid crystal polymer, pottery.Light-emitting diode chip for backlight unit 28 electrically connects with conductive layer 26/27 respectively by lead 31a/31b.Conductive layer 26/27 also comprises v-notch 26a/27a in the part of bending, makes bending process easier.In addition, conductive layer 26/27 the width of bending part and conductive layer 26/27 other with wide or bigger.Insert materials such as epoxy resin, acryl, silica gel by the mode of pressing mold, encapsulating or adhesion, form molded structure 25, light-emitting diode chip for backlight unit 28 is packaged in this depressed part.
Technical staff in this field knows that semiconductor optoelectronic component is when the conduction action, its part energy can produce heat energy, and its heat energy can occurrence temperature promote if continue to be accumulated on the photoelectric subassembly, thereby photoelectric subassembly caused damage, and then reduce the life-span that it uses.So how its heat energy is effectively led and leads to an important topic.Generally speaking, radiating effect is directly proportional with the sectional area of its transmitter, so the present invention becomes homogeneous or bigger width in the zone design that conductive layer 26/27 extends outside the pedestal, can promote the effect in its heat radiation.
Please refer to Fig. 3, the schematic diagram after its explanation is fixed according to a kind of package structure for LED of a preferred embodiment of the present invention.The structure 20 of finishing encapsulation among Fig. 2 A is fixing with the conducting terminal 29 on the support plate 22 by welding compound 23 (such as tin cream).
Please refer to Fig. 4, the schematic diagram after its explanation is fixed according to the another kind of package structure for LED of a preferred embodiment of the present invention.In this figure, the structure of finishing encapsulation among Fig. 2 A is fixing with the conducting terminal on side and the support plate 22 29 by welding compound 23 (such as tin cream).This package structure for LED is because of the kink 26/27 of conductive layer reduced width not, so can fix with side and the conducting terminal 29 on the support plate 22.
By the preferred embodiment of the invention described above as can be known, use package structure for LED of the present invention and can reduce Yin Wendu and go up and promote thereby photoelectric subassembly is caused damage, and then increase the useful life of encapsulating structure.In addition, because encapsulating structure at the bending part broad, makes encapsulating structure to fix with side and support plate.
Though the present invention discloses as above with a preferred embodiment; yet it is not in order to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; when can being used for a variety of modifications and variations, so protection scope of the present invention is as the criterion when looking defining of claims scope.
Claims (5)
1. package structure for LED wherein comprises at least:
One pedestal has a depressed part;
One conductive layer, be fixed in this pedestal and partly and be exposed in this depressed part, remainder extends from inside to outside, and by one the bending this conductive layer is extended to base bottom surface, wherein the width of this bending part is big than this conductive layer other parts width, and have at least one v-notch, be beneficial to bending process;
One light-emitting diode chip for backlight unit is fixed in this depressed part, and is connected with this conductive layer; And
One molded structure is inserted in this depressed part, in order to encapsulate this light-emitting diode chip for backlight unit.
2. package structure for LED as claimed in claim 1 is characterized in that, this pedestal material is the combination of epoxy resin, glass fibre, titanium oxide, calcium oxide, liquid crystal polymer, pottery or above-mentioned material.
3. package structure for LED as claimed in claim 1 is characterized in that, this molded structure material is the combination of epoxy resin, acryl, silica gel or above-mentioned material.
4. package structure for LED as claimed in claim 1 is characterized in that, this molded structure covers in the mode of pressing mold, encapsulating or adhesion and inserts in this depressed part.
5. package structure for LED as claimed in claim 1 is characterized in that this conductive layer comprises gold, silver, copper, platinum, aluminium, nickel, tin or magnesium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410059259XA CN100373641C (en) | 2004-06-15 | 2004-06-15 | Packaging structure of light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410059259XA CN100373641C (en) | 2004-06-15 | 2004-06-15 | Packaging structure of light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1713404A CN1713404A (en) | 2005-12-28 |
| CN100373641C true CN100373641C (en) | 2008-03-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200410059259XA Expired - Fee Related CN100373641C (en) | 2004-06-15 | 2004-06-15 | Packaging structure of light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100373641C (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101393948B (en) * | 2007-09-18 | 2010-06-02 | 宏齐科技股份有限公司 | Front and back clamping type light emitting diode packaging structure and packaging method thereof |
| CN103904203A (en) * | 2012-12-26 | 2014-07-02 | 鸿富锦精密工业（深圳）有限公司 | Light-emitting diode |
| CN111834510A (en) * | 2019-04-17 | 2020-10-27 | 深圳市明格科技有限公司 | LED package bracket |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5040868A (en) * | 1989-05-31 | 1991-08-20 | Siemens Aktiengesellschaft | Surface-mountable opto-component |
| JP2001205995A (en) * | 2000-01-26 | 2001-07-31 | Nihon Funen Co Ltd | Method for manufacturing panel |
| US6376902B1 (en) * | 1997-07-29 | 2002-04-23 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optoelectronic structural element |
| CN1492521A (en) * | 2002-09-05 | 2004-04-28 | ���ǻ�ѧ��ҵ��ʽ���� | Semiconductor device and optical device using said semiconductor device |
-
2004
- 2004-06-15 CN CNB200410059259XA patent/CN100373641C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5040868A (en) * | 1989-05-31 | 1991-08-20 | Siemens Aktiengesellschaft | Surface-mountable opto-component |
| US6376902B1 (en) * | 1997-07-29 | 2002-04-23 | Osram Opto Semiconductors Gmbh & Co. Ohg | Optoelectronic structural element |
| JP2001205995A (en) * | 2000-01-26 | 2001-07-31 | Nihon Funen Co Ltd | Method for manufacturing panel |
| CN1492521A (en) * | 2002-09-05 | 2004-04-28 | ���ǻ�ѧ��ҵ��ʽ���� | Semiconductor device and optical device using said semiconductor device |
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| Publication number | Publication date |
|---|---|
| CN1713404A (en) | 2005-12-28 |
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Granted publication date: 20080305 Termination date: 20190615 |