[go: up one dir, main page]

CN102738352A - Led packaging structure - Google Patents

Led packaging structure Download PDF

Info

Publication number
CN102738352A
CN102738352A CN2011100913590A CN201110091359A CN102738352A CN 102738352 A CN102738352 A CN 102738352A CN 2011100913590 A CN2011100913590 A CN 2011100913590A CN 201110091359 A CN201110091359 A CN 201110091359A CN 102738352 A CN102738352 A CN 102738352A
Authority
CN
China
Prior art keywords
heat dissipation
dissipation element
led
led chip
encapsulating structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2011100913590A
Other languages
Chinese (zh)
Other versions
CN102738352B (en
Inventor
蔡明达
陈靖中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Original Assignee
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rongchuang Energy Technology Co ltd, Zhanjing Technology Shenzhen Co Ltd filed Critical Rongchuang Energy Technology Co ltd
Priority to CN201110091359.0A priority Critical patent/CN102738352B/en
Priority to TW100114548A priority patent/TWI447974B/en
Publication of CN102738352A publication Critical patent/CN102738352A/en
Application granted granted Critical
Publication of CN102738352B publication Critical patent/CN102738352B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Led Device Packages (AREA)

Abstract

本发明提供一种LED封装结构，其包括一个第一散热元件、一个第二散热元件、两个电极、一个LED芯片以及一个封装层。所述第一散热元件用以设置所述两个电极以及所述LED芯片,并使所述两个电极与所述LED芯片达成电性连接。所述第二散热元件坎置于所述第一散热元件内,并位于所述LED芯片的相对位置。所述封装层,覆盖所述LED芯片。本发明的所述第二散热元件能通过所述第一散热元件加快所述LED芯片的热能对外传导散热，藉以提高LED封装结构的使用寿命。

Figure 201110091359

The present invention provides an LED packaging structure, which includes a first heat dissipation element, a second heat dissipation element, two electrodes, an LED chip and an encapsulation layer. The first heat dissipation element is used to arrange the two electrodes and the LED chip, and make the two electrodes and the LED chip electrically connected. The second heat dissipation element is placed in the first heat dissipation element and is located at a position opposite to the LED chip. The encapsulation layer covers the LED chip. The second heat dissipation element of the present invention can accelerate the external conduction and heat dissipation of the heat energy of the LED chip through the first heat dissipation element, thereby improving the service life of the LED package structure.

Figure 201110091359

Description

LED封装结构LED package structure

技术领域 technical field

本发明涉及一种LED封装结构，尤其涉及一种具有较佳散热效能的LED封装结构。 The invention relates to an LED packaging structure, in particular to an LED packaging structure with better heat dissipation performance.

背景技术 Background technique

LED产业是近几年最受瞩目的产业之一，发展至今，LED产品已具有节能、省电、高效率、反应时间快、寿命周期时间长、且不含汞、具有环保效益等优点。然而LED高功率、亮度与高密度封装的运用趋势下，其散热问题面临愈来愈严峻的考验，如果不适时解决将严重影响LED的寿命。LED封装结构中通常会使用LED芯片的载体基板协助散热，例如采用陶瓷基板或是金属基板。这些具有散热效能的基板因材料特性限制而有一定的散热效率，LED为一高热流密度的点光源，仅靠陶瓷或是金属材料散热，无法将热点快速扩散，对于维护LED使用寿命的成效上仍显不足。另外，LED封装结构的电极也是一个高传热率的材料，因此当LED以表面黏着技术SMT(Surface Mount Technology)设置于电路板时，焊接的高温可能造成所谓爬锡问题(又称SMT灯芯效应) ，而产生焊接的缺陷。所以如何有效快速的提高LED的散热效率，仍然是企业需要解决的问题。 The LED industry is one of the industries that has attracted the most attention in recent years. Up to now, LED products have the advantages of energy saving, power saving, high efficiency, fast response time, long life cycle, mercury-free, and environmental protection benefits. However, under the application trend of high power, brightness and high density packaging of LED, its heat dissipation problem is facing more and more severe tests. If it is not solved in time, it will seriously affect the life of LED. In the LED packaging structure, the carrier substrate of the LED chip is usually used to assist heat dissipation, such as a ceramic substrate or a metal substrate. These substrates with heat dissipation performance have a certain heat dissipation efficiency due to the limitation of material characteristics. LED is a point light source with high heat flux density. Only ceramic or metal materials can dissipate heat, and hot spots cannot be quickly spread. It is effective in maintaining the service life of LEDs. Still not enough. In addition, the electrode of the LED packaging structure is also a material with high heat transfer rate. Therefore, when the LED is installed on the circuit board with the surface mount technology SMT (Surface Mount Technology), the high temperature of the soldering may cause the so-called tin climbing problem (also known as the SMT wick effect. ), resulting in welding defects. Therefore, how to effectively and quickly improve the heat dissipation efficiency of LEDs is still a problem that enterprises need to solve.

发明内容 Contents of the invention

有鉴于此，有必要提供一种可加快散热效率、避免爬锡反应的LED封装结构。 In view of this, it is necessary to provide an LED packaging structure that can accelerate heat dissipation efficiency and avoid tin-scaling reaction.

一种LED封装结构，其包括一个第一散热元件、一个第二散热元件、两个电极、一个LED芯片以及一个封装层。所述第一散热元件用以设置所述两个电极以及所述LED芯片, 并使所述两个电极与所述LED芯片达成电性连接。所述第二散热元件坎置于所述第一散热元件内, 并位于所述LED芯片的相对位置。所述封装层, 覆盖所述LED芯片。 An LED encapsulation structure, which includes a first heat dissipation element, a second heat dissipation element, two electrodes, an LED chip and an encapsulation layer. The first heat dissipation element is used to arrange the two electrodes and the LED chip, and make the two electrodes electrically connected to the LED chip. The second heat dissipation element is placed in the first heat dissipation element and is located at a position opposite to the LED chip. The encapsulation layer covers the LED chip.

上述LED封装结构，由于所述第二散热元件位于所述第一散热元件内，并相对于所述LED芯片的位置，可直接将所述第一散热元件所传导的热量迅速对外传出，增加所述LED封装结构对外散热的效率，从而提高其使用寿命的维护。 The above LED packaging structure, because the second heat dissipation element is located in the first heat dissipation element and relative to the position of the LED chip, can directly transfer the heat conducted by the first heat dissipation element to the outside quickly, increasing The efficiency of external heat dissipation of the LED packaging structure improves the maintenance of its service life.

附图说明 Description of drawings

图1是本发明第一实施方式LED封装结构的剖视图。 Fig. 1 is a cross-sectional view of an LED package structure according to a first embodiment of the present invention.

图2是图1第一实施方式LED封装结构俯视图。 Fig. 2 is a top view of the LED package structure in the first embodiment shown in Fig. 1 .

图3是本发明第二实施方式LED封装结构的剖视图。 Fig. 3 is a cross-sectional view of an LED package structure according to a second embodiment of the present invention.

图4是图3第二实施方式LED封装结构俯视图。 Fig. 4 is a top view of the LED package structure in the second embodiment of Fig. 3 .

图5是本发明第三实施方式LED封装结构的剖视图。 Fig. 5 is a cross-sectional view of an LED package structure according to a third embodiment of the present invention.

主要元件符号说明 Description of main component symbols

LED封装结构LED package structure 10、20、3010, 20, 30 第一散热元件first cooling element 12、22、3212, 22, 32 凹槽groove 120、220120, 220 顶面top surface 122、222、322122, 222, 322 底面bottom surface 124、224124, 224 侧面side 126、226126, 226 第二散热元件second cooling element 14、24、3414, 24, 34 电极electrode 15、25、3515, 25, 35 LED芯片LED chips 16、26、3616, 26, 36 导电线conductive thread 162、262162, 262 封装层encapsulation layer 18、28、3818, 28, 38 凹坑pit 2929 反射杯reflector cup 3939

如下具体实施方式将结合上述附图进一步说明本发明。 The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.

具体实施方式 Detailed ways

下面将结合附图对本发明作一具体介绍。 The present invention will be described in detail below in conjunction with the accompanying drawings.

请参阅图1，所示为本发明第一实施方式LED封装结构10，其包括一个第一散热元件12、一个第二散热元件14、两个电极15、一个LED芯片16以及一个封装层18。所述第一散热元件12具有一个顶面122以及相对的一个底面124，所述顶面122用以设置所述两个电极15以及所述LED芯片16, 所述LED芯片16通过导电线162与所述两个电极15达成电性连接。所述底面124用以坎置所述第二散热元件14，使所述第二散热元件14与所述LED芯片16相对设置。所述两个电极15一个为正电极，一个为负电极,分别设置于所述顶面122的两侧，并由所述顶面122 延伸至所述第一散热元件12的侧面126。所述两个电极15的电极厚度在所述顶面122的中央部位形成一个凹槽120，所述凹槽120用以设置所述LED芯片16。所述凹槽120的面积大于所述第二散热元件14的面积(如图2中虚线所标示), 所述LED芯片16的面积则小于所述第二散热元件14的面积。所述第一散热元件12的材料是硅、陶瓷或高导热的绝缘材料。所述第二散热元件14的材料是金属或高导热材料。所述第一散热元件12的热传导速率小于所述第二散热元件14的热传导速率。所述封装层18覆盖所述LED芯片16，所述封装层18的材料是透明材质，例如，硅氧树脂(Silicone)或是环氧树脂(Epoxy) 材料。所述封装层18可以包含至少一种荧光粉(图中未标示) 。 Please refer to FIG. 1 , which shows an LED packaging structure 10 according to the first embodiment of the present invention, which includes a first heat dissipation element 12 , a second heat dissipation element 14 , two electrodes 15 , an LED chip 16 and an encapsulation layer 18 . The first heat dissipation element 12 has a top surface 122 and a bottom surface 124 opposite, the top surface 122 is used to set the two electrodes 15 and the LED chip 16, and the LED chip 16 is connected to the LED chip 16 through the conductive wire 162. The two electrodes 15 are electrically connected. The bottom surface 124 is used to mount the second heat dissipation element 14 so that the second heat dissipation element 14 is opposite to the LED chip 16 . One of the two electrodes 15 is a positive electrode and the other is a negative electrode, which are respectively arranged on both sides of the top surface 122, and extend from the top surface 122 to the side surface 126 of the first heat dissipation element 12. The electrode thickness of the two electrodes 15 forms a groove 120 at the center of the top surface 122 , and the groove 120 is used for disposing the LED chip 16 . The area of the groove 120 is larger than the area of the second heat dissipation element 14 (as indicated by the dotted line in FIG. 2 ), and the area of the LED chip 16 is smaller than the area of the second heat dissipation element 14. The material of the first heat dissipation element 12 is silicon, ceramic or insulating material with high thermal conductivity. The material of the second heat dissipation element 14 is metal or high thermal conductivity material. The heat conduction rate of the first heat dissipation element 12 is smaller than the heat conduction rate of the second heat dissipation element 14 . The encapsulation layer 18 covers the LED chip 16, and the material of the encapsulation layer 18 is a transparent material, such as silicone or epoxy. The encapsulation layer 18 may contain at least one phosphor (not shown in the figure).

上述第一实施方式LED封装结构10，所述LED芯片16位于所述第一散热元件12的顶面122上，其发光运作所产生的高热，通过所述第一散热元件12进行散热。所述第二散热元件14坎置于所述第一散热元件12内，并位于所述LED芯片的相对位置处，所述LED芯片16处产生的高热将可通过所述第一散热元件12后，再藉由所述第二散热元件14对外散热。所述第二散热元件14的热传导速率是大于所述第一散热元件12，因此所述第二散热元件14可以且通过所述第一散热元件12加速对所述LED芯片处产生的高热进行散热。相较于一般散热元件固定的散热速率，本实施方式LED封装结构10能更快速地对所述LED芯片16处产生的高热进行散热。所述第二散热元件14的快速散热作用，显然更能有效地维护所述LED封装结构10的使用寿命，并维持其良好的发光效能。 In the above-mentioned LED package structure 10 of the first embodiment, the LED chip 16 is located on the top surface 122 of the first heat dissipation element 12 , and the high heat generated by its light-emitting operation is dissipated through the first heat dissipation element 12 . The second heat dissipation element 14 is placed in the first heat dissipation element 12 and is located at a position opposite to the LED chip. The high heat generated at the LED chip 16 can pass through the first heat dissipation element 12 , and then use the second heat dissipation element 14 to dissipate heat to the outside. The heat conduction rate of the second heat dissipation element 14 is greater than that of the first heat dissipation element 12, so the second heat dissipation element 14 can and through the first heat dissipation element 12 accelerate the heat dissipation of the high heat generated at the LED chip . Compared with the fixed heat dissipation rate of general heat dissipation elements, the LED package structure 10 of this embodiment can dissipate the high heat generated at the LED chip 16 more quickly. The rapid heat dissipation effect of the second heat dissipation element 14 obviously can more effectively maintain the service life of the LED package structure 10 and maintain its good luminous efficacy.

请再参阅图3，是本发明第二实施方式LED封装结构的剖视图。所述LED封装结构20基本上与所述第一实施方式LED封装结构10相同，其包括一个第一散热元件22、一个第二散热元件24、两个电极25、一个LED芯片26以及一个封装层28。所述第一散热元件22具有一个顶面222以及相对的一个底面224，所述顶面222用以设置所述两个电极25以及所述LED芯片26, 所述LED芯片26通过导电线262与所述两个电极25达成电性连接。所述底面224用以坎置所述第二散热元件24，使所述第二散热元件24与所述LED芯片26相对设置。所述两个电极25的电极厚度在所述顶面222的中央部位形成一个凹槽220，所述凹槽220用以设置所述LED芯片26。所述封装层28覆盖所述LED芯片26。不同在于；所述两个电极25自所述顶面222两侧延伸至所述第一散热元件22的侧面226，所述两个电极25的电极厚度与所述底面224之间形成凹坑29。所述凹坑29在所述LED封装结构20设置于电路板时，所述凹坑29可以提供作为焊料的容置空间，防止焊料循着所述电极25传导焊接时的高温而产生的爬锡现象。另外，所述凹坑29的防爬锡作用，使所述第二散热元件24的面积可以增加以提高所述LED封装结构20在设置于电路板时的对外散热效率。所述第二散热元件24的面积大于所述凹槽220的面积(如图4所示)，使所述第二散热元件24延伸靠近所述第一散热元件22的侧面226，增加焊接时的散热效率，维护所述LED封装结构20。 Please refer to FIG. 3 again, which is a cross-sectional view of the LED package structure according to the second embodiment of the present invention. The LED packaging structure 20 is basically the same as the LED packaging structure 10 of the first embodiment, which includes a first heat dissipation element 22, a second heat dissipation element 24, two electrodes 25, an LED chip 26 and an encapsulation layer 28. The first heat dissipation element 22 has a top surface 222 and a bottom surface 224 opposite, the top surface 222 is used to set the two electrodes 25 and the LED chip 26, and the LED chip 26 is connected to the LED chip 26 through the conductive wire 262 The two electrodes 25 are electrically connected. The bottom surface 224 is used to mount the second heat dissipation element 24 so that the second heat dissipation element 24 is opposite to the LED chip 26 . The electrode thickness of the two electrodes 25 forms a groove 220 at the center of the top surface 222 , and the groove 220 is used for disposing the LED chip 26 . The encapsulation layer 28 covers the LED chip 26 . The difference is that the two electrodes 25 extend from both sides of the top surface 222 to the side surface 226 of the first heat dissipation element 22 , and a pit 29 is formed between the electrode thickness of the two electrodes 25 and the bottom surface 224 . When the LED packaging structure 20 is placed on the circuit board, the pit 29 can provide a space for solder to prevent the solder from following the electrode 25 to conduct soldering due to high temperature. Phenomenon. In addition, the anti-creeping effect of the recess 29 can increase the area of the second heat dissipation element 24 to improve the external heat dissipation efficiency of the LED packaging structure 20 when it is arranged on a circuit board. The area of the second heat dissipation element 24 is larger than the area of the groove 220 (as shown in FIG. 4 ), so that the second heat dissipation element 24 extends close to the side 226 of the first heat dissipation element 22, increasing the welding time. Heat dissipation efficiency, maintaining the LED package structure 20 .

最后，请再参阅图5，是本发明第三实施方式LED封装结构的剖视图。所述LED封装结构30基本上与所述第一实施方式LED封装结构10相同，其包括一个第一散热元件32、一个第二散热元件34、两个电极35、一个LED芯片36以及一个封装层38。由于基本结构特征相同因此不再赘述。不同在于；所述第一散热元件32的所述顶面322上具有一个反射杯39设置，所述反射杯39环绕于所述顶面322的周缘。所述反射杯39是以模造成型(Molding)方式成型，有助于提升所述LED封装结构30的发光效能。所述反射杯39的材料是塑料或是高分子的材料，例如，PPA(Polyphthalamide) 塑料或是环氧树脂材料。 Finally, please refer to FIG. 5 , which is a cross-sectional view of the LED package structure according to the third embodiment of the present invention. The LED packaging structure 30 is basically the same as the LED packaging structure 10 of the first embodiment, which includes a first heat dissipation element 32, a second heat dissipation element 34, two electrodes 35, an LED chip 36 and an encapsulation layer 38. Since the basic structural features are the same, they will not be repeated here. The difference is that a reflection cup 39 is provided on the top surface 322 of the first heat dissipation element 32 , and the reflection cup 39 surrounds the periphery of the top surface 322 . The reflective cup 39 is formed by molding, which helps to improve the luminous efficiency of the LED packaging structure 30 . The material of the reflective cup 39 is plastic or polymer material, for example, PPA (Polyphthalamide) plastic or epoxy resin material.

综上，本发明LED封装结构的所述第二散热元件位于所述第一散热元件内，并位于所述LED芯片的相对位置上，且所述第二散热元件的热传导速率是大于所述第一散热元件，使所述LED芯片产生的高热可藉由所述第二散热元件加速对外传导，从而可增加所述LED封装结构对外散热的效率，提高其维护使用的寿命。 To sum up, the second heat dissipation element of the LED packaging structure of the present invention is located inside the first heat dissipation element and at a position opposite to the LED chip, and the heat conduction rate of the second heat dissipation element is greater than that of the first heat dissipation element. A heat dissipation element, so that the high heat generated by the LED chip can be accelerated to the outside through the second heat dissipation element, thereby increasing the heat dissipation efficiency of the LED package structure and improving its maintenance and service life.

另外，本领域技术人员还可在本发明精神内做其它变化，当然，这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。 In addition, those skilled in the art can also make other changes within the spirit of the present invention. Of course, these changes made according to the spirit of the present invention should be included within the scope of protection claimed by the present invention.

Claims (13)

1. LED encapsulating structure; It comprises one first heat dissipation element, second heat dissipation element, two electrodes, a led chip and an encapsulated layer, and said first heat dissipation element is in order to being provided with said two electrodes and said led chip, and makes said two electrodes and said led chip reach electric connection; The said second heat dissipation element bank places in said first heat dissipation element; And being positioned at the relative position of said led chip, said encapsulated layer covers said led chip.
2. LED encapsulating structure as claimed in claim 1; It is characterized in that: said first heat dissipation element; Have an end face and a relative bottom surface, said end face is in order to be provided with said two electrodes and said led chip, and said second heat dissipation element is put in order to bank in said bottom surface.
3. LED encapsulating structure as claimed in claim 1 is characterized in that: said first heat dissipation element, material are the insulating material of silicon, pottery or high heat conduction.
4. LED encapsulating structure as claimed in claim 1 is characterized in that: said first heat dissipation element, thermal conduction rate is less than the thermal conduction rate of said second heat dissipation element.
5. LED encapsulating structure as claimed in claim 1 is characterized in that: said second heat dissipation element, material are metal or highly heat-conductive material.
6. LED encapsulating structure as claimed in claim 1; It is characterized in that: said two electrodes, one is positive electrode, one is negative electrode; Both sides by the said first heat dissipation element end face extend to the side; The thickness of electrode of said two electrodes forms a groove at the central part of said end face, and said groove is provided with said led chip, and said led chip is reached electric connection through conductor wire and said two electrodes.
7. LED encapsulating structure as claimed in claim 6 is characterized in that: said groove, area are greater than the area of said second heat dissipation element, and the area of said led chip is less than the area of said second heat dissipation element.
8. LED encapsulating structure as claimed in claim 6 is characterized in that: the thickness of electrode of said two electrodes, between the side of said first heat dissipation element and said bottom surface, form pit, and make the area of the area of said second heat dissipation element greater than said groove.
9. LED encapsulating structure as claimed in claim 1 is characterized in that: said encapsulated layer, material are transparent materials, comprise silica resin (Silicone) or epoxy resin (Epoxy) material.
10. LED encapsulating structure as claimed in claim 1 is characterized in that: said encapsulated layer comprises at least a fluorescent material.
11. LED encapsulating structure as claimed in claim 1 is characterized in that: said first heat dissipation element, have a reflector setting, said reflector is surrounded on the end face periphery of said first heat dissipation element.
12. LED encapsulating structure as claimed in claim 11 is characterized in that: said reflector is with the moulding of mould model mode.
13. LED encapsulating structure as claimed in claim 11 is characterized in that: said reflector, material are plastics or high molecular material, for example, and PPA (Polyphthalamide) plastics or epoxide resin material.
CN201110091359.0A 2011-04-13 2011-04-13 LED encapsulation structure Expired - Fee Related CN102738352B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201110091359.0A CN102738352B (en) 2011-04-13 2011-04-13 LED encapsulation structure
TW100114548A TWI447974B (en) 2011-04-13 2011-04-27 Structure of the led package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110091359.0A CN102738352B (en) 2011-04-13 2011-04-13 LED encapsulation structure

Publications (2)

Publication Number Publication Date
CN102738352A true CN102738352A (en) 2012-10-17
CN102738352B CN102738352B (en) 2016-01-06

Family

ID=46993484

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110091359.0A Expired - Fee Related CN102738352B (en) 2011-04-13 2011-04-13 LED encapsulation structure

Country Status (2)

Country Link
CN (1) CN102738352B (en)
TW (1) TWI447974B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103545426A (en) * 2013-10-31 2014-01-29 桂林福冈新材料有限公司 LED bracket
CN103560198A (en) * 2013-11-08 2014-02-05 桂林机床电器有限公司 LED packaging structure
CN107994108A (en) * 2017-12-26 2018-05-04 深圳市灏天光电有限公司 A kind of anti-fracture stent and its production method
CN110970375A (en) * 2018-09-29 2020-04-07 珠海格力电器股份有限公司 Packaging structure and preparation method thereof

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1612369A (en) * 2003-10-30 2005-05-04 京瓷株式会社 Light-emitting element reception package, light-emitting device and lighting device
US20050205889A1 (en) * 2004-03-16 2005-09-22 Hsing Chen Light emitting diode package with high power
CN1828951A (en) * 2005-03-03 2006-09-06 宏齐科技股份有限公司 Diode packaging structure for preventing short circuit and manufacturing method thereof
US20070126020A1 (en) * 2005-12-03 2007-06-07 Cheng Lin High-power LED chip packaging structure and fabrication method thereof
US20070292979A1 (en) * 2003-02-07 2007-12-20 Sanyo Electric Co., Ltd. Semiconductor device and method of fabricating the same
CN101127377A (en) * 2006-08-16 2008-02-20 晶元光电股份有限公司 Light emitting diode device and light emitting chip
CN101252163A (en) * 2008-03-27 2008-08-27 潮州三环（集团）股份有限公司 SMD high power LED ceramic packaging base
CN101276869A (en) * 2008-05-04 2008-10-01 潮州市三江电子有限公司 Ceramic heat radiation substrate for sheet-shaped LED encapsulation
CN101350390A (en) * 2008-08-21 2009-01-21 旭丽电子(广州)有限公司 A kind of LED packaging structure
US20090052483A1 (en) * 2007-08-20 2009-02-26 Young Optics Inc. Optoelectronic semiconductor package and method for attaching heat dissipation element thereto
US20090061550A1 (en) * 2005-07-20 2009-03-05 Samsung Electro-Mechanics Co., Ltd. Led package and fabricating method thereof
JP2009094303A (en) * 2007-10-10 2009-04-30 Nec Access Technica Ltd Through-hole structure and printed circuit board using the same
US20090302344A1 (en) * 2003-04-01 2009-12-10 Sharp Kabushiki Kaisha Light-emitting apparatus package, light-emitting apparatus, backlight apparatus, and display apparatus
CN101814569A (en) * 2009-02-23 2010-08-25 Lg伊诺特有限公司 Light emitting device package

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5060172B2 (en) * 2007-05-29 2012-10-31 岩谷産業株式会社 Semiconductor light emitting device
TWM386441U (en) * 2010-03-18 2010-08-11 Uei Shy Entpr Co Ltd Integrated one-piece ceramic heat dissipation device

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070292979A1 (en) * 2003-02-07 2007-12-20 Sanyo Electric Co., Ltd. Semiconductor device and method of fabricating the same
US20090302344A1 (en) * 2003-04-01 2009-12-10 Sharp Kabushiki Kaisha Light-emitting apparatus package, light-emitting apparatus, backlight apparatus, and display apparatus
CN1612369A (en) * 2003-10-30 2005-05-04 京瓷株式会社 Light-emitting element reception package, light-emitting device and lighting device
US20050205889A1 (en) * 2004-03-16 2005-09-22 Hsing Chen Light emitting diode package with high power
CN1828951A (en) * 2005-03-03 2006-09-06 宏齐科技股份有限公司 Diode packaging structure for preventing short circuit and manufacturing method thereof
US20090061550A1 (en) * 2005-07-20 2009-03-05 Samsung Electro-Mechanics Co., Ltd. Led package and fabricating method thereof
US20070126020A1 (en) * 2005-12-03 2007-06-07 Cheng Lin High-power LED chip packaging structure and fabrication method thereof
CN101127377A (en) * 2006-08-16 2008-02-20 晶元光电股份有限公司 Light emitting diode device and light emitting chip
US20090052483A1 (en) * 2007-08-20 2009-02-26 Young Optics Inc. Optoelectronic semiconductor package and method for attaching heat dissipation element thereto
JP2009094303A (en) * 2007-10-10 2009-04-30 Nec Access Technica Ltd Through-hole structure and printed circuit board using the same
CN101252163A (en) * 2008-03-27 2008-08-27 潮州三环（集团）股份有限公司 SMD high power LED ceramic packaging base
CN101276869A (en) * 2008-05-04 2008-10-01 潮州市三江电子有限公司 Ceramic heat radiation substrate for sheet-shaped LED encapsulation
CN101350390A (en) * 2008-08-21 2009-01-21 旭丽电子(广州)有限公司 A kind of LED packaging structure
CN101814569A (en) * 2009-02-23 2010-08-25 Lg伊诺特有限公司 Light emitting device package

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103545426A (en) * 2013-10-31 2014-01-29 桂林福冈新材料有限公司 LED bracket
CN103560198A (en) * 2013-11-08 2014-02-05 桂林机床电器有限公司 LED packaging structure
CN107994108A (en) * 2017-12-26 2018-05-04 深圳市灏天光电有限公司 A kind of anti-fracture stent and its production method
CN110970375A (en) * 2018-09-29 2020-04-07 珠海格力电器股份有限公司 Packaging structure and preparation method thereof

Also Published As

Publication number Publication date
TWI447974B (en) 2014-08-01
TW201242123A (en) 2012-10-16
CN102738352B (en) 2016-01-06

Similar Documents

Publication Publication Date Title
CN101645478A (en) Light emitting diode (LED) radiating structure
CN100435361C (en) Packaging structure of semiconductor light emitting element
CN201568775U (en) LED light source module with asymmetric light distribution
CN102194807A (en) Light-emitting diode packaging structure and manufacturing method thereof
CN101740678A (en) Solid state light-emitting element and light source module
CN102738352B (en) LED encapsulation structure
CN101126863A (en) Light-emitting diode light source module with heat radiation structure
CN106601898A (en) Light-emitting diode packaging structure
US8907371B2 (en) Light emitting diode package and light emitting device having the same
KR100929325B1 (en) Heat dissipation LED package
CN101777549A (en) Package module structure of compound semiconductor element and manufacturing method thereof
CN108305927B (en) Inorganic encapsulation direct-insert type deep ultraviolet LED
CN106098919A (en) High-thermal-conductivity and high-insulation LED light engine packaging structure and preparation method
CN104103734A (en) Light-emitting diode packaging structure
CN103715190B (en) Luminescent device
KR100764461B1 (en) Semiconductor package with buffer layer
CN101609864A (en) Light emitting diode packaging structure and packaging method
CN207883721U (en) A kind of LED light bar with excellent heat dispersion performance
CN103311422A (en) Light emitting diode element
CN103000794A (en) LED package structure
CN201112407Y (en) High-power light-emitting diode structure
CN103855282A (en) Led
TWI591860B (en) Light emitting diodes package structure for high-voltage power supply
CN103247742A (en) LED heat radiation substrate and manufacturing method thereof
CN101581404B (en) Light-emitting element module

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160106

Termination date: 20200413