CN100369277C - led - Google Patents
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- CN100369277C CN100369277C CNB2004101027050A CN200410102705A CN100369277C CN 100369277 C CN100369277 C CN 100369277C CN B2004101027050 A CNB2004101027050 A CN B2004101027050A CN 200410102705 A CN200410102705 A CN 200410102705A CN 100369277 C CN100369277 C CN 100369277C
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- 239000004065 semiconductor Substances 0.000 claims abstract description 113
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 description 29
- 238000010586 diagram Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- CODVACFVSVNQPY-UHFFFAOYSA-N [Co].[C] Chemical compound [Co].[C] CODVACFVSVNQPY-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000000904 thermoluminescence Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
A light emitting diode is provided, wherein a first semiconductor layer is disposed on a substrate, a second semiconductor layer is disposed on the first semiconductor layer, and the second semiconductor layer and the first semiconductor layer are of different doping types. In addition, the second electrode is disposed on the second semiconductor layer, and the first electrode is disposed on the first semiconductor layer and surrounds the second electrode. In addition, the dielectric layer is arranged on the substrate and electrically insulates the first electrode from the second electrode. The reset circuit is arranged on the dielectric layer and connected to the first electrode and the second electrode so as to provide a first extension electrode and a second extension electrode on the dielectric layer. The LED can avoid the current choking phenomenon and has higher reliability and better luminous efficiency.
Description
Technical field
The invention relates to a kind of semiconductor element, and particularly about the invention of a kind of light-emitting diode (LED).
Background technology
Light-emitting diode belongs to a kind of semiconductor element, the material of its luminescence chip mainly uses III-V family chemical element, as: gallium phosphide (GaP), GaAs (GaAs), gallium nitride compound semiconductors such as (GaN), its principle of luminosity is to convert electrical energy into light, just compound semiconductor is applied electric current, by combining of electronics and hole, the energy of surplus is disengaged with the form of light, and reach luminous effect.Because the luminescence phenomenon of light-emitting diode is not by adding thermoluminescence or Discharge illuminating, but it is luminous to belong to cold property, thus the life-span of light-emitting diode reach more than 100,000 hours, and need not warm-up time (idling time).In addition, light-emitting diode have reaction speed fast (be about 10-9 second), volume little, power-saving, pollute low (not containing mercury), high reliability, be fit to advantages such as batch process, therefore its applicable field of institute is very extensive, for example needs the Dashboard illumination, traffic lights of scanner lamp source, Backlight For Liquid Crystal Display Panels or the front light-source automobile of reaction at a high speed and general lighting device etc.
Known light-emitting diode is main material with gallium nitride (GaN), and forms by the mode manufacturing of orientation growth of crystals (epitaxy).Wherein, light-emitting diode mainly comprises substrate (substrate), semiconductor layer (semi-conductivelayer), two external electrodes, and also comprises two bond courses (confinement layer) that have N type and the doping of P type respectively in the semiconductor layer and be positioned at two luminescent layers (active layer) between bond course.When external electrode is applied forward bias voltage drop, the electric current semiconductor layer of can flowing through, and in luminescent layer, produce combining of electronics and hole, and then make luminescent layer luminous.
In recent years, along with the luminous efficiency of light-emitting diode constantly improves, make that light-emitting diode is existing and replace the fluorescent lamp of tradition and the trend of incandescent lamp bulb gradually, and the manufacturing of light-emitting diode is also gradually towards high power and large-area trend development.Yet, because the electrode of known large area light emitting diode is not to be desirable configuration in design, for example the spacing between two electrodes does not wait, and the CURRENT DISTRIBUTION inequality in the light-emitting diode when make driving, and then cause the luminous efficiency of light-emitting diode not good.In addition, owing to have the be jammed phenomenon of (crowding effect) of electric current when driving near the electrode, therefore when local electric current is excessive, just may causes electrode or near semiconductor layer to be damaged, and make that light-emitting diode can't normal operation.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of light-emitting diode, it can evenly distribute electric current by special electrode design, and the phenomenon that can avoid electric current to be jammed, thereby has higher reliability and preferable luminous efficiency.
Another object of the present invention provides a kind of light-emitting diode, and it puts the extension electrode that circuit provides better position by reseting, and is beneficial to light-emitting diode and extraneous engaging.
Another purpose of the present invention provides a kind of light-emitting diode, and it is put circuit and come a plurality of luminescence units of serial or parallel connection by reseting, and then reaches large tracts of landization, and makes the equally distributed purpose of electric current.
Based on above-mentioned or other purpose, the present invention proposes a kind of light-emitting diode, for example comprises substrate, first semiconductor layer, second semiconductor layer, first electrode and second electrode.First semiconductor layer is arranged on the substrate, and second semiconductor layer is arranged on first semiconductor layer, and wherein second semiconductor layer exposes region outside first semiconductor layer, and second semiconductor layer is different dopant profile with first semiconductor layer.In addition, second electrode is arranged on second semiconductor layer, and first electrode is arranged on the outer peripheral areas of first semiconductor layer that second semiconductor layer exposed, and around second electrode.
Based on above-mentioned or other purpose, the present invention also proposes another kind of light-emitting diode, for example comprises substrate, first semiconductor layer, a plurality of second semiconductor layer, a plurality of first electrode, a plurality of second electrode, dielectric layer and the layer that reroutes.First semiconductor layer is arranged on the substrate, and second semiconductor layer is arranged on first semiconductor layer, and wherein second semiconductor layer exposes the subregion of first semiconductor layer, and second semiconductor layer is different dopant profile with first semiconductor layer.In addition, each second electrode is arranged on second semiconductor layer, and first electrode is arranged on the subregion of first semiconductor layer that second semiconductor layer exposed, and wherein each first electrode is around at least one second electrode.In addition, dielectric layer is arranged on the substrate, and wherein dielectric layer covers first semiconductor layer and second semiconductor layer, and dielectric layer exposes first electrode and second electrode, and makes first electrode and the second electrode electric insulation.Reset and put circuit and be arranged on the dielectric layer, wherein reset and put circuit and be connected to first electrode and second electrode, and reset and put circuit and have first extension electrode and second extension electrode.
Based on above-mentioned explanation, first electrode of the present invention's light-emitting diode and second electrode process particular design, so that electric current evenly distributes, and the phenomenon that can avoid electric current to be jammed.In addition, the extension electrode that circuit can provide better position is put in reseting of the present invention, is beneficial to light-emitting diode and extraneous engaging, and a plurality of luminescence units of serial or parallel connection simultaneously, to reach the purpose of large tracts of landization.
State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Embodiment
[first embodiment]
Please respectively with reference to Figure 1A and 1B, wherein Figure 1A is the schematic top plan view of a kind of light-emitting diode of the present invention's first embodiment, and Figure 1B is the A-A ' profile of Figure 1A.Light-emitting diode 100 for example has substrate 102, and substrate 102 is provided with first semiconductor layer 110 and second semiconductor layer 120, and wherein second semiconductor layer 120 is arranged on first semiconductor layer 110, and exposes region outside first semiconductor layer 110.In addition, first semiconductor layer 110 is the doping of different kenels with second semiconductor layer 120, in a preferred embodiment, first semiconductor layer 110 and second semiconductor layer 120 for example are respectively that the N type mixes and the P type mixes, in another preferred embodiment, first semiconductor layer 110 and second semiconductor layer 120 for example are respectively that the P type mixes and the N type mixes, to engage (P-N junction) face in generation P-N between first semiconductor layer 110 and second semiconductor layer 120.
Refer again to Figure 1A and 1B, for example be provided with second electrode 140 on second semiconductor layer 120.And region is provided with first electrode 130 outside first semiconductor layer 110, and first electrode 130 is around second electrode 140.Wherein, the shape of second electrode 140 for example is a rectangle, and first electrode 130 for example is the rectangular box-like electrode corresponding to second electrode 140.When first electrode 130 and second electrode 140 are applied forward bias voltage drop, just can produce combining of electronics and hole on the P-N composition surface of first semiconductor layer 110 and second semiconductor layer 120, and transfer energy to light and penetrate.
From the above, the present invention's first electrode 130 is provided with around second electrode 140, so that have comparatively even CURRENT DISTRIBUTION between first electrode 130 and second electrode 140, and the phenomenon that can avoid electric current to be jammed.What deserves to be mentioned is, in a preferred embodiment, first electrode 130 also for example can be along the profile that encloses outside second electrode 140 and around second electrode 140, so that equate apart from maintenance between first electrode 130 and second electrode 140, and then obtains better driving effect.Certainly, according to the present invention's feature, the shape of second electrode 140 and first electrode 130 is except can be rectangle shown in Figure 1A and rectangle frame, and it also for example can be circle and annulus, polygon and polygon frame or other corresponding combination.
Based on above-mentioned explanation, the present invention's first electrode and the setting of second electrode can provide uniform CURRENT DISTRIBUTION, and the phenomenon that can avoid near the electric current of electrode to be jammed, so that light-emitting diode has preferable luminous efficiency.Yet, in follow-up technology, light-emitting diode usually can be again with other for example element such as fin or line carrier plate engage.Therefore, for the carrying out that helps to engage, the present invention also can carry out the action of rewiring (redistribution) on the electrode of above-mentioned light-emitting diode, it for example comprises little shadow (lithography), Wet-type etching (wet etching) or dry-etching (dry etching), and evaporation technologies such as (evaporation), and on light-emitting diode, form extension electrode with preferable bonding station.
Please respectively with reference to figure 2A and 2B, wherein Fig. 2 A is the schematic top plan view of light-emitting diode after rewiring of Figure 1A, and Fig. 2 B is the A-A ' profile of Fig. 2 A.Shown in Fig. 2 A and 2B, dielectric layer 150 is arranged on the substrate 102, and cover first semiconductor layer 110 and second semiconductor layer 120, wherein dielectric layer 150 exposes first electrode 130 and second electrode 140, and make first electrode 130 and second electrode, 140 electric insulations, and the material of dielectric layer 150 for example is an insulation material commonly used such as silica, silicon nitride, and it can also use quasi cobalt carbon diaphragm (diamond-like carbon) with high coefficient of heat transfer or the diamond material as dielectric layer 150.In addition, dielectric layer 150 is provided with one and resets and put circuit (redistributing circuit) 160, and this resets and puts circuit 160 and for example have first extension electrode 162 and second extension electrode 164, wherein first extension electrode 162 and second extension electrode 164 lay respectively at the relative both sides of substrate 102, and first extension electrode 162 is connected to first electrode 130 downwards, and 164 extensions of second extension electrode are connected to second electrode 140.
The present invention's light-emitting diode can provide extension electrode respectively in its relative both sides, thereby help the carrying out of follow-up joint action after rewiring.Please refer to Fig. 3, light-emitting diode that the figure shows the present invention and schematic diagram after heat abstractor engages.As shown in Figure 3, light-emitting diode 100 engages with metal fin 180 to cover crystal type, and can be connected to the external world by metal fin 180.Wherein, first extension electrode 162 and second extension electrode 164 for example are connected to metal fin 180 by soldered ball 170 respectively, and the material of metal fin 180 for example is the metal that copper, silver etc. are easy to heat conduction.Because first extension electrode 162 and second extension electrode 164 are positioned at the relative both sides of light-emitting diode 100, so help engaging of metal fin 180 and light-emitting diode 100.In addition, in other embodiment of the present invention, light-emitting diode 100 also for example can directly engage with drive circuit board (not expressing among the figure) or other line carrier plate (not expressing among the figure), wherein put circuit 160 by reseting of the present invention, but the last contact of corresponding circuits plate (not expressing among the figure) is adjusted first extension electrode 162 and second extension electrode 164 to desired position, and the last configuration of circuit board (not expressing among the figure) also can have more elasticity because of the adjustment of first extension electrode 162 and second extension electrode 164.
Light-emitting diode based on the first above-mentioned embodiment, the present invention also can make a plurality of luminescence units on same substrate, to obtain the light-emitting diode of large tracts of land (light-emitting area), wherein the luminescence unit of indication comprises elements such as first semiconductor layer, second semiconductor layer, first electrode and second electrode on the substrate herein.In addition,, and reset the wires design of putting circuit, also can make different annexations such as having parallel connection, series connection between the luminescence unit, so that multiple driving effect to be provided by the set-up mode of first electrode between different luminescence units and second electrode.Second embodiment to the, four embodiment hereinafter are illustrated several dissimilar large area light emitting diode of enumerating the present invention respectively.
[second embodiment]
Please respectively with reference to figure 4A and 4B, wherein Fig. 4 A is the schematic top plan view of a kind of large area light emitting diode of the present invention's second embodiment, and Fig. 4 B is the B-B ' profile of Fig. 4 A.For example be formed with a plurality of first semiconductor layers 210 on the substrate 202 of light-emitting diode 200, and each first semiconductor layer 210 is provided with second semiconductor layer 220.In addition, be respectively arranged with first electrode 230 and second electrode 240 on first semiconductor layer 210 and second semiconductor layer 220, and each first electrode 230 is around 240 settings of second electrode, with a plurality of luminescence unit 200a of forming array arrangement.
Then, please respectively with reference to figure 5A, 5B and 6, wherein Fig. 5 A resets schematic top plan view after putting circuit for the light-emitting diode of Fig. 4 A in formation, and Fig. 5 B is the B-B ' profile of Fig. 5 A, and Fig. 6 is the connecting circuit schematic diagram of luminescence unit 200a.Put circuit 260 and can connect by reseting, and with the luminescence unit 200a parallel connection of each row, and reset and put circuit 260 and also extend first extension electrode 262 and second extension electrode 264 both sides to substrate 202 with the luminescence unit 200a of delegation.
[the 3rd embodiment]
Please respectively with reference to figure 7A and 7B, wherein Fig. 7 A is the schematic top plan view of a kind of large area light emitting diode of the present invention's the 3rd embodiment, and Fig. 7 B is the C-C ' profile of Fig. 7 A.For example be formed with a plurality of luminescence unit 300a on the substrate 302 of light-emitting diode 300, wherein first electrode 330 of each luminescence unit 300a adjoins each other, and each first electrode 330 is around second electrode 340.
In addition, please respectively with reference to figure 8A, 8B and 9, wherein Fig. 8 A resets schematic top plan view after putting circuit for the light-emitting diode of Fig. 7 A in formation, and Fig. 8 B is the C-C ' profile of Fig. 8 A, and Fig. 9 is the connecting circuit schematic diagram of luminescence unit 300a.Wherein, first electrode 330 of each luminescence unit 300a interconnects, and puts circuit 360 and be connected to first extension electrode 362 by reseting.In addition, second electrode 340 of each luminescence unit 300a is put circuit 360 and is connected to second extension electrode 364 by reseting, so that each luminescence unit 300a is parallel with one another.
[the 4th embodiment]
Please respectively with reference to figure 10A and 10B, wherein Figure 10 A is the schematic top plan view of a kind of large area light emitting diode of the present invention's the 4th embodiment, and Figure 10 B is the D-D ' profile of Figure 10 A.For example be formed with first semiconductor layer 410 on the substrate 402 of light-emitting diode 400, and first semiconductor layer 410 is provided with a plurality of second semiconductor layers 420.In addition, each second semiconductor layer 420 is provided with a plurality of second electrodes 440, and first electrode 430 on first semiconductor layer 410 is provided with around second electrode 440 on each second semiconductor layer, to constitute a plurality of luminescence unit 400a.
Please respectively with reference to figure 11A, 11B and 12, wherein Figure 11 A resets schematic top plan view after putting circuit for the light-emitting diode of Figure 10 A in formation, and Figure 11 B is the D-D ' profile of Figure 11 A, and Figure 12 is the connecting circuit schematic diagram of luminescence unit 400a.Wherein, first electrode 430 of each luminescence unit 400a adjoins each other, and put circuit 460 and be connected to first extension electrode 462 by reseting, and second electrode 440 puts circuit 460 and is connected to second extension electrode 464 by reseting, so that luminescence unit 400a is parallel with one another.
In sum, the present invention's light-emitting diode has following feature and advantage at least:
(1) first electrode and the two or two electrode process particular design, so that electric current can evenly distribute, so the phenomenon that can avoid electric current to be jammed, and can have higher reliability and preferable luminous efficiency.
(2) can put the extension electrode that circuit provides better position by reseting, be beneficial to light-emitting diode and extraneous engaging.
(3) can put a plurality of luminescence units of circuit serial or parallel connection by reseting, so that the type of drive of difference to be provided, and then reach large tracts of landization, and make the equally distributed purpose of electric current.
Though the present invention with preferred embodiment openly as above; right its is not in order to limit the present invention; the ordinary skill of any technical field that the present invention belongs to; without departing from the spirit and scope of the invention; when can doing a little change and retouching, so the present invention's protection range attached claims person of defining after looking is as the criterion.
Description of drawings
Figure 1A is the schematic top plan view of a kind of light-emitting diode of the present invention's first embodiment.
Figure 1B is the A-A ' profile of Figure 1A.
Fig. 2 A is the schematic top plan view of light-emitting diode after rewiring of Figure 1A.
Fig. 2 B is the A-A ' profile of Fig. 2 A.
Fig. 3 is the present invention's light-emitting diode and schematic diagram after heat abstractor engages.
Fig. 4 A is the schematic top plan view of a kind of large area light emitting diode of the present invention's second embodiment.
Fig. 4 B is the B-B ' profile of Fig. 4 A.
Fig. 5 A resets schematic top plan view after putting circuit for the light-emitting diode of Fig. 4 A in formation.
Fig. 5 B is the B-B ' profile of Fig. 5 A.
Fig. 6 is the connecting circuit schematic diagram of the luminescence unit of Fig. 5 A.
Fig. 7 A is the schematic top plan view of a kind of large area light emitting diode of the present invention's the 3rd embodiment.
Fig. 7 B is the C-C ' profile of Fig. 7 A.
Fig. 8 A resets schematic top plan view after putting circuit for the light-emitting diode of Fig. 7 A in formation.
Fig. 8 B is the C-C ' profile of Fig. 8 A.
Fig. 9 is the connecting circuit schematic diagram of the luminescence unit of Fig. 8 A.
Figure 10 A is the schematic top plan view of a kind of large area light emitting diode of the present invention's the 4th embodiment.
Figure 10 B is the D-D ' profile of Figure 10 A.
Figure 11 A resets schematic top plan view after putting circuit for the light-emitting diode of Figure 10 A in formation.
Figure 11 B is the D-D ' profile of Figure 11 A.
Figure 12 is the connecting circuit schematic diagram of the luminescence unit of Figure 11 A.
The main element description of symbols
100: light-emitting diode
102: substrate
110: the first semiconductor layers
120: the second semiconductor layers
130: the first electrodes
140: the second electrodes
150: dielectric layer
160: reset and put circuit
162: the first extension electrodes
164: the second extension electrodes
170: soldered ball
180: metal fin
200: light-emitting diode
200a: luminescence unit
202: substrate
210: the first semiconductor layers
220: the second semiconductor layers
230: the first electrodes
240: the second electrodes
260: reset and put circuit
262: the first extension electrodes
264: the second extension electrodes
300: light-emitting diode
300a: luminescence unit
302: substrate
330: the first electrodes
340: the second electrodes
360: reset and put circuit
362: the first extension electrodes
364: the second extension electrodes
400: light-emitting diode
400a: luminescence unit
402: substrate
410: the first semiconductor layers
420: the second semiconductor layers
430: the first electrodes
440: the second electrodes
460: reset and put circuit
462: the first extension electrodes
464: the second extension electrodes
Claims (15)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNB2004101027050A CN100369277C (en) | 2004-12-28 | 2004-12-28 | led |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004101027050A CN100369277C (en) | 2004-12-28 | 2004-12-28 | led |
Publications (2)
| Publication Number | Publication Date |
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| CN1797798A CN1797798A (en) | 2006-07-05 |
| CN100369277C true CN100369277C (en) | 2008-02-13 |
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| CNB2004101027050A Expired - Fee Related CN100369277C (en) | 2004-12-28 | 2004-12-28 | led |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101428053B1 (en) * | 2007-12-13 | 2014-08-08 | 엘지이노텍 주식회사 | Semiconductor light emitting device and fabrication method thereof |
| CN102270633B (en) * | 2011-07-29 | 2013-11-20 | 贵州大学 | High-power flip-chip array LED chip and manufacturing method thereof |
| TWI583019B (en) * | 2015-02-17 | 2017-05-11 | 新世紀光電股份有限公司 | Light emitting diode and manufacturing method thereof |
Citations (6)
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|---|---|---|---|---|
| JPH06232626A (en) * | 1993-02-02 | 1994-08-19 | A T R Koudenpa Tsushin Kenkyusho:Kk | Slot coupling type microstrip antenna |
| US5563422A (en) * | 1993-04-28 | 1996-10-08 | Nichia Chemical Industries, Ltd. | Gallium nitride-based III-V group compound semiconductor device and method of producing the same |
| US5691738A (en) * | 1994-03-30 | 1997-11-25 | Nippondenso Co., Ltd. | Thin-film electroluminescent display and method of fabricating same |
| CN2419688Y (en) * | 2000-05-12 | 2001-02-14 | 华上光电股份有限公司 | A compound semiconductor component electrode structure |
| US6531376B1 (en) * | 2002-04-17 | 2003-03-11 | Semiconductor Components Industries Llc | Method of making a semiconductor device with a low permittivity region |
| CN1134848C (en) * | 1999-08-11 | 2004-01-14 | 晶元光电股份有限公司 | Light emitting diode |
-
2004
- 2004-12-28 CN CNB2004101027050A patent/CN100369277C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232626A (en) * | 1993-02-02 | 1994-08-19 | A T R Koudenpa Tsushin Kenkyusho:Kk | Slot coupling type microstrip antenna |
| US5563422A (en) * | 1993-04-28 | 1996-10-08 | Nichia Chemical Industries, Ltd. | Gallium nitride-based III-V group compound semiconductor device and method of producing the same |
| US5691738A (en) * | 1994-03-30 | 1997-11-25 | Nippondenso Co., Ltd. | Thin-film electroluminescent display and method of fabricating same |
| CN1134848C (en) * | 1999-08-11 | 2004-01-14 | 晶元光电股份有限公司 | Light emitting diode |
| CN2419688Y (en) * | 2000-05-12 | 2001-02-14 | 华上光电股份有限公司 | A compound semiconductor component electrode structure |
| US6531376B1 (en) * | 2002-04-17 | 2003-03-11 | Semiconductor Components Industries Llc | Method of making a semiconductor device with a low permittivity region |
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| CN1797798A (en) | 2006-07-05 |
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