CN100365496C - Active device matrix substrate and repairing method thereof - Google Patents

Abstract

An active device matrix substrate comprises a substrate, a plurality of scanning lines, a plurality of data lines and a plurality of pixel units. The scanning lines and the data lines are all arranged on the substrate, wherein between any two adjacent scanning lines, each data line is provided with a first line segment, a second line segment and a connecting line segment for connecting the first line segment and the second line segment. The pixel units are arranged on the substrate and are respectively and electrically connected with the corresponding scanning lines and the corresponding data lines, wherein between any two adjacent scanning lines, the first line segment and the second line segment of each data line are respectively positioned below the two adjacent pixel units.

Description

Active device matrix substrate and repair method thereof

technical field

The invention relates to an active device matrix substrate and a repair method thereof, in particular to an active device matrix substrate capable of improving the display quality of a liquid crystal display panel and a repair method thereof.

Background technique

Early display devices made of cathode ray tubes (cathode ray tube, CRT) had disadvantages such as large volume, heavy weight, high radiation, and poor image quality. Therefore, new flat-panel display technologies have been continuously developed. These newly developed flat-panel displays have the advantages of thinness, power saving, low radiation, full color, etc., including liquid crystal displays (liquid crystal displays, LCDs), plasma displays (plasma display panels, PDPs), organic electroluminescent displays (organic electroluminescent display, OELD), etc. Among these newly developed flat-panel displays, liquid crystal displays are the most common and the technology is the most mature. All mobile phones, digital cameras, notebook computers, and LCD TVs have their application ranges. Generally speaking, a liquid crystal display mainly includes a liquid crystal display panel and a backlight module. The liquid crystal display panel mainly includes a thin film transistor array substrate and a color filter substrate.

FIG. 1A is a schematic diagram illustrating the structure of a conventional thin film transistor array substrate. 1B is a schematic cross-sectional view of the thin film transistor array substrate shown in FIG. 1A along the section line a-b, and FIG. 2 is a schematic structural view of a liquid crystal display panel fabricated using the thin film transistor array substrate shown in FIG. 1A . Please refer to FIG. 1A and FIG. 1B at the same time. The thin film transistor array substrate 100 includes a glass substrate 110, a plurality of scanning lines 120, a plurality of data lines 130, a plurality of pixel units 140 and at least one repair line 150 (as shown in FIG. 2 . ). Wherein, the scan line 120, the data line 130, the pixel unit 140 and the repair line 150 are all configured on the glass substrate 110, and the pixel unit 140 is electrically connected to the corresponding scan line 120 and the data line 130, and each pixel unit 140 includes a TFT 142 and a transparent conductive electrode (such as indium tin oxide (ITO)) 144 .

During the manufacturing process of the thin film transistor array substrate 100 , it is inevitable that some disconnection defects will occur. These disconnection defects can be detected by an array test process, and can be repaired by laser chemical vapor deposition (laser CVD) in a repair process. However, not all disconnection defects are suitable for repairing by laser chemical vapor deposition. For example, a high aperture ratio process using a low dielectric insulating layer or when the disconnection defect is detected after the liquid crystal cell is formed.

The stray capacitance _Cpd (Capacitancebetween pixel and data line) between the data line 130 and the transparent conductive electrode 144 is one of the main factors affecting the aperture ratio. When the effect of the stray capacitance _Cpd is too large, the transparent conductive electrode 144 The electric charge held on the terminal is easily affected by the adjacent data line 130, resulting in a cross talk effect. In order to reduce the stray capacitance C _pd effect and increase the aperture ratio, many methods have been studied, one of which is to add an insulating layer with a low dielectric constant (insulator layer) between the data line 130 and the transparent conductive electrode 144. ) (not shown), the thickness of the insulating layer on the data line is about 1 to 3 microns when the dielectric constant is 3.5, so that the transparent conductive electrode 144 can straddle the data line 130 to increase the aperture ratio. The low dielectric insulating layer (insulator layer) used in the above method may include organic, inorganic, photo-sensitivity and non-photo-sensitivity materials, and the like. In order to effectively reduce the stray capacitance C _pd effect in the process, the insulating layer between the transparent conductive electrode 144 and the data line 130 usually needs to have a thickness of more than 1-3 microns (μm). When the data line 130 is disconnected in the process , using the traditional front repair method, it is necessary to dig through a 1-3 micron (μm) thick insulating layer to repair the disconnected data line 130, so it is easy to produce other defects during the repair process, which affects the transparent conductive near the repair position. Normal display of electrode 144.

In addition, when the disconnection defect is detected after the thin film transistor substrate 100 and the color filter substrate (not shown) are assembled and liquid crystals (not shown) are injected, the thin film transistor array (TFT array) caused by the disconnection ) end has been covered in the entire liquid crystal cell (cell), so laser chemical vapor deposition cannot be used to repair the broken line. In order to avoid forming bright lines on the liquid crystal display panel (not shown), there is another The best repairing method is to repair the liquid crystal display panel through the repairing line 150 of the thin film transistor array substrate 100 .

Please refer to FIG. 2 , the liquid crystal display panel 200 is made of the above thin film transistor array substrate 100 and has a plurality of scanning lines 120 , a plurality of data lines 130 and a repairing line 150 . When it is found that the liquid crystal display panel 200 has a defect of disconnection, it must be repaired through the repair line 150 . For example, when a damaged data line 130 is detected on the liquid crystal display panel 200, the repair line 150 and the damaged data line 130 can be welded by laser at the welding points 150a and 150b respectively, so that the damaged data line 130 Most of the functions of the data line 130 can be recovered through the repair line 150 .

However, since the number of repair lines 150 of the liquid crystal display panel 200 is usually limited, the number of data lines 130 that can be repaired is limited. When the above breakpoint is reached, the liquid crystal display panel 200 cannot be repaired, so that the number of broken wire defects that can be repaired is limited. In addition, the size of the panel is getting bigger and bigger, and the length of the repairing line 150 is getting longer and longer, which leads to signal delay and signal attenuation after the signal is transmitted over a long distance, resulting in poor display images of the liquid crystal display panel 200 .

Contents of the invention

In view of the above, an object of the present invention is to provide an active device matrix substrate capable of improving the display quality of a liquid crystal display panel.

Another object of the present invention is to provide a method for repairing active device matrix substrates capable of repairing disconnection of multiple data lines or two or more breaks in a single data line, and avoiding signal delay and signal attenuation; The invention can be repaired on the back of the matrix substrate of the active device, and can reduce other defects generated during the repair.

The invention provides an active device matrix substrate, which includes a substrate, multiple scanning lines, multiple data lines and multiple pixel units. Both the scanning lines and the data lines are arranged on the substrate, wherein between any two adjacent scanning lines, each data line has a first line segment, a second line segment and a connection connecting the first line segment and the second line segment line segment. The pixel units are arranged on the substrate and are respectively electrically connected to the corresponding scanning lines and data lines, wherein between any two adjacent scanning lines, the first line segment and the second line segment of each data line are respectively located in the adjacent below the two-pixel unit.

According to the active device matrix substrate described in the preferred embodiment of the present invention, each pixel unit includes, for example, an active device and a pixel electrode. The pixel electrodes are electrically connected to corresponding scanning lines and data lines through active devices.

According to the active device matrix substrate described in the preferred embodiment of the present invention, between any two adjacent scan lines, the first line segment and the second line segment of each data line are respectively located below the adjacent two pixel electrodes .

The active device matrix substrate according to the preferred embodiment of the present invention, for example, further includes a plurality of common lines disposed on the substrate, and the common lines can be formed on the substrate simultaneously with the scanning lines, wherein each pixel electrode is connected to the corresponding The common line constitutes a storage capacitor.

According to the active device matrix substrate according to the preferred embodiment of the present invention, the pixel electrode is, for example, a rectangular electrode.

According to the active device matrix substrate described in the preferred embodiment of the present invention, wherein the pixel electrode has two first electrode parts, respectively located on both sides of a first reference line and connected to each other, and these first electrode parts are symmetrical to the first electrode part a reference line.

According to the active device matrix substrate of the preferred embodiment of the present invention, the shape of the first electrode parts is, for example, parallelogram.

According to the active device matrix substrate described in the preferred embodiment of the present invention, each first electrode portion has two second electrode portions, which are respectively located on both sides of a second reference line and connected to each other, and these second electrodes Partially symmetrical about the second reference line.

According to the active device matrix substrate of the preferred embodiment of the present invention, the shapes of the second electrode portions are, for example, parallelograms.

According to the active device matrix substrate described in the preferred embodiment of the present invention, it also includes a plurality of repairing line groups arranged on the substrate, wherein each repairing line group corresponds to one of the connecting line segments, and each repairing line group includes, for example, a A first repair line and a second repair line. The first repair line and the second repair line are electrically insulated from the data line, and the first repair line and the second repair line are respectively located on the opposite side of the corresponding connecting line segment, and these repairing lines and connecting line segments are not on the same layer as the data line Formed together when the metal lines are formed. In the case of the present invention, the first repair line, the second repair line and the connecting line segment are formed together when making the scan line, so the ends of the first repair line and the second repair line are respectively located at the corresponding data line first. One segment and below the second segment.

According to the active device matrix substrate described in the preferred embodiment of the present invention, between any two adjacent scanning lines, the first repairing line and the second repairing line next to each data line are respectively located on the adjacent two pixel electrodes below.

The invention proposes a method for repairing an active device matrix substrate, which uses a laser welding method (laser welding) to repair the back of the active device matrix substrate. The repair method includes welding the end of the first repair line or the end of the second repair line to the corresponding first line segment and the second line segment, so that data information can continue to be transmitted through the connection of the repair line. And since the data line in each pixel unit has a corresponding repair line, it can be repaired for each defective unit.

To sum up, in the active device matrix substrate of the present invention, between any two adjacent scan lines, the first line segment and the second line segment of each data line are respectively located below the adjacent two pixel electrodes, These pixel electrodes and the data lines are separated by one or more layers of organic or non-organic, photosensitive or non-photosensitive insulating layers (insulator layer), with dot inversion (dot inversion) or row inversion (column inversion) and other driving methods Afterwards, the effect of the parasitic capacitance can be offset to improve the display quality of the liquid crystal display panel. In addition, each pixel unit has a corresponding repair mechanism, which can repair multiple broken lines, and compared with the peripheral wiring repair method that bypasses the display area, the repair method of the active device matrix substrate proposed by the present invention is less easy Cause signal delay and signal attenuation.

In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments are described below in detail with accompanying drawings.

Description of drawings

FIG. 1A is a schematic diagram illustrating the structure of a thin film transistor array substrate in the prior art.

FIG. 1B is a schematic cross-sectional view of the thin film transistor array substrate shown in FIG. 1A along the section line a-b.

FIG. 2 is a schematic diagram illustrating the structure of a liquid crystal display panel fabricated by using the thin film transistor array substrate of FIG. 1A .

FIG. 3A is a schematic diagram illustrating the structure of an active device matrix substrate according to a first embodiment of the present invention.

3B , 3C and 3D are schematic cross-sectional views of the active device matrix substrate shown in FIG. 3A along section lines a-b, c-d and e-f, respectively.

FIG. 3E is a schematic diagram illustrating a repairing method for the active device matrix substrate shown in FIG. 3A .

FIG. 4A is a schematic diagram illustrating the structure of an active device matrix substrate according to a second embodiment of the present invention.

4B , 4C and 4D are schematic cross-sectional views of the active device matrix substrate shown in FIG. 4A along section lines a-b, c-d and e-f, respectively.

FIG. 5A is a schematic diagram illustrating the structure of an active device matrix substrate according to a third embodiment of the present invention.

5B , 5C and 5D are schematic cross-sectional views of the active device matrix substrate shown in FIG. 5A along section lines a-b, c-d and e-f, respectively.

FIG. 6A is a schematic diagram illustrating the structure of an active device matrix substrate according to a fourth embodiment of the present invention.

6B , 6C and 6D are schematic cross-sectional views of the active device matrix substrate shown in FIG. 6A along section lines a-b, c-d and e-f, respectively.

FIG. 7A is a schematic diagram illustrating the structure of an active device matrix substrate according to a fifth embodiment of the present invention.

7B , 7C and 7D are schematic cross-sectional views of the active device matrix substrate shown in FIG. 7A along section lines a-b, c-d and e-f, respectively.

FIG. 8A is a schematic diagram illustrating the structure of an active device matrix substrate according to a sixth embodiment of the present invention.

8B , 8C and 8D are schematic cross-sectional views of the active device matrix substrate shown in FIG. 8A along section lines a-b, c-d and e-f, respectively.

FIG. 9A is a schematic diagram illustrating the structure of an active device matrix substrate according to a seventh embodiment of the present invention.

9B , 9C and 9D are schematic cross-sectional views of the active device matrix substrate shown in FIG. 9A along section lines a-b, c-d and e-f, respectively.

Explanation of main component symbols

100: TFT array substrate

110: glass substrate

120, 320: scan line

130, 330, 430, 530, 630, 730, 830, 930: data cable

140, 340, 440, 640, 740: pixel units

142: thin film transistor

144: transparent conductive electrode

150: Repair line

150a, 150b, 332a, 332b, 332a', 332a", 334a, 334b, 334b', 33b", 432a, 432b, 434a, 434b, 532a, 532b, 534a, 534b: welding points

200: LCD display panel

300, 400, 500, 600, 700, 800, 900: active device matrix substrate

310: Substrate

330a: Disconnection

332, 432, 532, 632, 732, 832, 932: the first line segment

334, 434, 534, 634, 734, 834, 934: second line segment

336, 436, 536: connecting line segments

342: Active Devices

344, 444, 644, 744: pixel electrodes

350, 450, 550, 650, 750: repair line group

352, 452, 552, 652, 752: the first repair line

354, 454, 554, 654, 754: second repair line

460, 660, 760: public lines

644a, 644b, 744a, 744b: first electrode portion

644c, 744c: first reference line

744a', 744b': second electrode part

744c: Second Reference Line

a, b, c: local area

Detailed ways

first embodiment

FIG. 3A is a schematic diagram illustrating the structure of an active device matrix substrate according to a first embodiment of the present invention. 3B , 3C and 3D are schematic cross-sectional views of the active device matrix substrate shown in FIG. 3A along section lines a-b, c-d and e-f, respectively. Please refer to FIG. 3A to FIG. 3D at the same time. The active device matrix substrate 300 of this embodiment includes a substrate 310 , a plurality of scan lines 320 , a plurality of data lines 330 and a plurality of pixel units 340 . The relative positions, detailed structures and materials of the substrate 310 , the scan lines 320 , the data lines 330 and the pixel units 340 will be further described below.

The substrate 310 is, for example, a glass substrate, a quartz substrate, or a substrate of other suitable materials. The scanning lines 320 are disposed on the substrate 310 and may be aluminum alloy wiring or wiring formed of other suitable conductive materials. The data lines 330 are disposed on the substrate 310 and may be wirings formed of chromium metal lines, aluminum alloy lines or other suitable conductive materials. Between any two adjacent scan lines 320 , each data line 330 has a first line segment 332 , a second line segment 334 and a connecting line segment 336 , and the connecting line segment 336 connects the first line segment 332 and the second line segment 334 . The pixel unit 340 is arranged on the substrate 310, and is electrically connected to the corresponding scanning line 320 and the data line 330 respectively, wherein between any two adjacent scanning lines 320, the first line segment 332 and the second line segment of each data line 330 334 are respectively located below the two pixel units 340 adjacent to the data line 330 .

In this embodiment, the pixel unit 340 includes an active device 342 and a pixel electrode 344 . The active device 342 is, for example, a thin film transistor or other tri-polar switching devices. The pixel electrode 344 is electrically connected to the corresponding scanning line 320 and the data line 330 through the active device 342. The pixel electrode 344 is, for example, a transmissive electrode, a reflective electrode or a transflective electrode. electrode), and the material of the pixel electrode 344 can be indium tin oxide, indium zinc oxide (indium zine oxide, IZO), metal or other transparent or opaque conductive materials. In addition, between any two adjacent scan lines 320 , the first line segment 332 and the second line segment 334 of each data line 330 are respectively located below the two pixel electrodes 344 adjacent to the data line 330 .

In order to repair the data lines 330 of the active device matrix substrate 300 when broken, the active device matrix substrate 300 of this embodiment includes multiple sets of repairing wire groups 350 , and these repairing wire groups 350 are arranged on the substrate 310 . Each repair line group 350 is configured corresponding to one connecting line segment 336 , and each repair line group 350 includes a first repair line 352 and a second repair line 354 . The materials of the first repairing line 352 and the second repairing line 354 are, for example, aluminum alloy or other suitable conductive materials, and are respectively located on opposite sides of the corresponding connecting line segment 336, and the ends of the first repairing line 352 and the second repairing line 354 They are respectively located below the corresponding first line segment 332 and the second line segment 334 . Moreover, between any two adjacent scanning lines 320 , the first repairing line 352 and the second repairing line 354 next to each data line 330 are respectively located under two pixel electrodes 344 adjacent to the data line 330 . It is worth mentioning that the first repair line 352, the second repair line 354 and the connecting line segment 336 are not formed at the same time as the data line 330, and the first repairing line 352, the second repairing line 354 and the connecting line segment 336 can The line 320, a shielding layer (not shown) or a common line (not shown) are formed together.

When one of the data lines 330 is broken, the active device matrix substrate 300 can be repaired by using the first repair line 352 or the second repair line 354 of the repair line group 350 . The method of repairing the active device matrix substrate 300 is to weld the end of the first repairing line 352 or the end of the second repairing line 354 to the corresponding first line segment 332 and second line segment 334 . The method of patching is described in more detail below.

FIG. 3E is a schematic diagram of a repairing method for the active device matrix substrate shown in FIG. 3A . Referring to FIG. 3E , when a data line 330 on the active device matrix substrate 300 is broken, and the broken position is marked as a broken line 330a, it can be repaired by laser welding. When it is detected that in the local area a marked in FIG. 3E, a data line 330 is broken, and the broken line 330a is located between the welding point 332a and the welding point 332b (or between the welding point 332b and the welding point 334b), you can first One end of the first line segment 332 and the first repair line 352 is welded with a laser at the welding point 332a, and the other end of the second line segment 334 and the first repair line 352 is welded with a laser at the welding point 334b, so that the current can flow along The data line 330 is turned on by the first repair line 352 .

In another situation, if the display panel is driven in a dot inversion or column inversion mode, after the welding points 332a and 334b are welded by laser, since the data line 330 passes through the first repair The line 352 is turned on, and the pixel electrode 344 covers the first repairing line 352 , so there will be a parasitic capacitance C _pd between the pixel electrode 344 on the right of the local area a and the first repairing line 352 in the local area a. In order to balance this parasitic capacitance C _pd , in the partial region b indicated in FIG. The other end of the second wire segment 334 is welded to the second repair wire 354 . Thus, between the local area a and the local area b, the parasitic capacitance C pd _between the pixel electrode 344 and the first repairing line 352 on the right is the same as the parasitic capacitance C _pd between the pixel electrode 344 and the second repairing line 354 on the left. When the active device matrix substrate 300 is driven by dot inversion or row inversion, the effects of the parasitic capacitance C _pd on both sides of the pixel electrode 344 can cancel each other out.

As mentioned above, if the broken line 330a is located between the welding point 334a and the welding point 334b or between the welding point 334b and the welding point 332b, the first line segment 332 and the second patch can be welded by laser at the welding point 332b first. One end of the line 354 is welded to the other end of the second line segment 334 and the second repair line 354 at the welding point 334 a by laser. After the welding points 332b and 334a are laser welded, in the partial area c indicated in FIG. "Use the laser to weld the second line segment 334 and the other end of the first repair line 352. The advantages of configuring the repair line group 350 will be further described below.

Since each repair line group 350 corresponds to a connecting line segment 336, the first repairing line 352 and the second repairing line 354 are respectively located on the opposite side of the corresponding connecting line segment 336, and the ends of the first line segment 352 and the second line segment 354 They are respectively located below the corresponding first line segment 332 and the second line segment 334 . The first repairing line 352 and the second repairing line 354 can be used to repair the broken data line 330, and can also be used to block light leakage. As far as the repairing function is concerned, compared with the prior art, no matter how many data lines 330 are broken in the pixel display area of the active device matrix substrate 300, these broken data lines 330 can be repaired. The repaired active device matrix substrate 300 also has no problems of signal delay and signal attenuation.

In addition, these repairs do not need to use laser chemical vapor deposition, but use laser welding (laser welding), which can be repaired by laser welding on the back of the glass after the liquid crystal cell is formed. Therefore, the present invention can be used for repairing when using a high aperture ratio process using a low dielectric insulating layer (a thickness of 1-3 microns or more), and when the disconnection defect is detected after the liquid crystal cell is assembled.

It is worth mentioning that although the present embodiment illustrates that the first line segment 332 , the second line segment 334 and the connecting line segment 336 are straight lines, they may also be in different shapes according to requirements in other embodiments.

second embodiment

FIG. 4A is a schematic structural diagram of an active device matrix substrate according to a second embodiment of the present invention. 4B , 4C and 4D are schematic cross-sectional views of the active device matrix substrate of FIG. 4A along the section lines a-b, c-d and e-f, respectively. Please refer to FIGS. 4A to 4D at the same time. The active device matrix substrate 400 of this embodiment is similar to the active device matrix substrate 300 of the first embodiment. The active device matrix substrate 400 of this embodiment includes a substrate 310 , a plurality of scan lines 320 , a plurality of data lines 430 and a plurality of pixel units 440 .

The substrate 310 and the scan lines 320 are the same as those described in the first embodiment. Between any two adjacent scan lines 320, each data line 430 includes a first line segment 432, a second line segment 434, and a connecting line segment 436, and the first line segment 432 and the second line segment 434 are approximately C-shaped line segments or The line segment is approximately U-shaped, and the straight connecting line segment 436 connects the first line segment 432 and the second line segment 434 . The first line segment 432 on one side of the scan line 320 is connected to the second line segment 434 on the other side of the scan line 320 by a straight connecting line segment 436 . The first repairing line 452 and the second repairing line 454 of the repairing line group 450 cooperate with the first line segment 432, the second line segment 434 and the connecting line segment 436 to be bent into an approximately C-shaped line segment or an approximately U-shaped line segment, so that the second line segment Ends of a repairing line 452 are respectively located below the corresponding first line segments 432 , and ends of the second repairing lines 454 are respectively located below the corresponding second line segments 434 . In addition, the active device matrix substrate 400 includes a plurality of common lines 460, which are arranged on the substrate 310, which can be formed simultaneously with the scan lines 320, and can be formed of aluminum alloy wiring or other suitable conductor materials. Each rectangular pixel electrode 444 and the corresponding common line 460 form a storage capacitor.

Same as the first embodiment, between any two adjacent scan lines 320 , the first line segment 432 and the second line segment 434 of each data line 430 are respectively located below the two pixel units 440 adjacent to the data line 330 . In more detail, the first line segment 432 and the second line segment 434 of each data line 430 are respectively located below the two pixel electrodes 444 adjacent to the data line 330 . Therefore, after matching the driving methods such as dot inversion or row inversion, the display unevenness of the liquid crystal display panel (not shown) fabricated with the active device matrix substrate 400 can be improved.

When a data line 430 is broken in the active device matrix substrate 400, it can be repaired by laser welding. For example, if the fractured position of the data line 430 is located on the first line segment 432, the first line segment 432 and an end of the first repair line 452 are first welded at the welding point 432a with a laser, and at the welding point 432b, the laser is used to weld The other end of the first line segment 432 is welded to the first repair line 452 . Then, at the diagonal positions of the pixel electrodes 444 covering the first repairing line 452 , the two ends of the second repairing line 454 are respectively welded to the second line segment 434 covering the second repairing line 454 . In this way, the effects of the parasitic capacitance C _pd can be canceled out by driving methods such as dot inversion or row inversion.

The advantages of the active device matrix substrate 400 of this embodiment are the same as those described in the first embodiment, so they will not be repeated here.

third embodiment

FIG. 5A is a schematic structural diagram of an active device matrix substrate according to a third embodiment of the present invention. 5B , 5C and 5D are schematic cross-sectional views of the active device matrix substrate of FIG. 5A along the section lines a-b, c-d and e-f, respectively. Please refer to FIG. 5A to FIG. 5D at the same time. The active device matrix substrate 500 of this embodiment is similar to the active device matrix substrate 400 of the second embodiment, except that: between any two adjacent scanning lines 320, each The data line 530 has a first line segment 532 , a second line segment 534 and two connecting line segments 536 . The two connecting line segments 536 are both straight lines, and connect the first line segment 532 and the second line segment 534 that are approximately C-shaped or approximately U-shaped. The first line segment 532 on one side of the scan line 320 is connected to the second line segment 534 on the other side of the scan line 320 by two straight connecting line segments 536 . Ends of the first repairing lines 552 of the repairing line group 550 are respectively located below the corresponding first line segments 532 , and ends of the second repairing lines 554 are respectively located below the corresponding second line segments 534 .

The difference between the second embodiment and the third embodiment lies in the cross over of the data line 530 and the scan line 320 or the data line 530 and the common line 460 . In the third embodiment, the data line 530 crosses the scan line 320 and the common line 460 at two places, so when the disconnection occurs in a certain section of the crossover area, data can be transmitted continuously through another section. The repair method of other active device matrix substrates 500 is the same as the repair method of the above-mentioned active device matrix substrate 400, and the advantages that the active device matrix substrate 500 has are the same as those described in the first embodiment, so they are not discussed here. Recap.

Fourth embodiment

FIG. 6A is a schematic structural diagram of an active device matrix substrate according to a fourth embodiment of the present invention. 6B , 6C and 6D are schematic cross-sectional views of the active device matrix substrate shown in FIG. 6A along section lines a-b, c-d and e-f, respectively. Please refer to FIG. 6A to FIG. 6D at the same time. The difference between the active device matrix substrate 600 of this embodiment and the active device matrix substrate 500 of the third embodiment is that in this embodiment, the pixels of the pixel unit 640 The electrode 644 has first electrode portions 644a, 644b respectively located on both sides of a first reference line 644c and connected to each other. These first electrode portions 644a, 644b are symmetrical to the first reference line 644c, and the first electrode portion 644a The shape of , 644b is, for example, a parallelogram.

In addition, the first line segment 632 and the second line segment 634 of the data line 630 are approximately C-shaped, and the first line segment 632 and the second line segment 634 are bent along the edge of the pixel electrode 644 so that the first line segment 632 and the second line segment The line segments 634 are respectively located below the two pixel electrodes 444 adjacent to the data line 630 . The first repair line 652 and the second repair line 654 of the repair line group 650 are also bent along the edge of the pixel electrode 644, so that the ends of the first repair line 652 are located below the corresponding first line segment 632, and the second Ends of the repair lines 654 are respectively located below the corresponding second line segments 634 .

The repair method of the active device matrix substrate 600 is the same as the repair method of the above-mentioned active device matrix substrate 400, and the advantages of the active device matrix substrate 600 are the same as those described in the first embodiment, so they will not be repeated here. stated.

fifth embodiment

FIG. 7A is a schematic structural diagram of an active device matrix substrate according to a fifth embodiment of the present invention. FIG. 7B , FIG. 7C and FIG. 7D are schematic cross-sectional views of the active device matrix substrate of FIG. 7A along section lines a-b, c-d and e-f, respectively. Please refer to FIGS. 7A to 7D at the same time. The active device matrix substrate 700 of this embodiment is similar to the active device matrix substrate 600 of the fourth embodiment. The difference is that in this embodiment, the pixel electrode 744 of the pixel unit 740 There are first electrode portions 744a, 744b respectively located on both sides of a first reference line 744c and connected to each other, these first electrode portions 744a, 744b are symmetrical to the first reference line 744c, and the first electrode portions 744a, 744b The shape is a parallelogram. In addition, the first electrode parts 744a, 744b respectively have second electrode parts 744a', 744b' located on both sides of a second reference line 744c' and connected to each other, and these second electrode parts 744a', 744b' are symmetrical On the second reference line 744c', and the shape of the second electrode portion 744a', 744b' is a parallelogram. The first line segment 732 and the second line segment 734 of the data line 730 have the same shape, and both are bent along the edge of the pixel electrode 744, so that the first line segment 732 and the second line segment 734 are located opposite to the data line 730 respectively. Below the adjacent two pixel electrodes 744 . The repair line group 750 includes two first repair lines 752 and two second repair lines 754 . Ends of the two first repair lines 752 are located below the corresponding first line segment 732 , and ends of the two second repair lines 754 are located below the corresponding first line segment 734 .

The method for repairing the active device matrix substrate 700 is similar to the method for repairing the above-mentioned active device matrix substrate 400 . For example, if the break of the data line 730 is located on the first line segment 732, the two ends of the corresponding first repair line 752 are first welded by laser, and then the first electrode part 744a covering the first repair line 752 The first repair line 752 is welded to the first line segment 732 covering the first repair line 752 at a diagonal position.

The advantages of the active device matrix substrate 700 are the same as those described in the first embodiment, so they will not be repeated here.

Sixth embodiment

FIG. 8A is a schematic structural diagram of an active device matrix substrate according to a sixth embodiment of the present invention. 8B , 8C and 8D are schematic cross-sectional views of the active device matrix substrate of FIG. 8A along the section lines a-b, c-d and e-f, respectively. Please refer to FIG. 8A to FIG. 8D at the same time. The active device matrix substrate 800 of this embodiment is a modification of the active device matrix substrate 700 of the fifth embodiment. In the active device matrix substrate 700, the shapes of the first line segment 732 and the second line segment 734 are the same, but in the active device matrix substrate 800, the shapes of the first line segment 832 and the second line segment 834 of the data line 830 are mutually compatible. symmetrical, and the rest are the same as the active device matrix substrate 700 .

The repair method of the active device matrix substrate 800 is the same as the repair method of the above-mentioned active device matrix substrate 700, and the advantages of the active device matrix substrate 800 are the same as those described in the first embodiment, so they will not be repeated here. stated.

Seventh embodiment

FIG. 9A is a schematic structural diagram of an active device matrix substrate according to a seventh embodiment of the present invention. FIG. 9B , FIG. 9C and FIG. 9D are schematic cross-sectional views of the active device matrix substrate of FIG. 9A along section lines a-b, c-d and e-f, respectively. Please refer to FIG. 9A to FIG. 9D at the same time. The active device matrix substrate 900 of this embodiment is similar to the active device matrix substrate 700 of the fifth embodiment. The difference is that in this embodiment, the first line segment 932 The shape is approximately C-shaped, and the shape of the second line segment 934 is approximately the number 3. In addition, unlike the active device matrix substrate 700 in FIG. 7A having two first repair lines 752 and two second repair lines 754, the active device matrix substrate 900 in FIG. 9A has a first repair line 752 and A second repair line 754.

The repair method of the active device matrix substrate 900 is the same as the repair method of the above-mentioned active device matrix substrate 400, and the advantages of the active device matrix substrate 900 are the same as those described in the first embodiment, so they will not be repeated here. stated.

In summary, the active device matrix substrate of the present invention and its repair method have at least the following advantages:

1. In the active device matrix substrate proposed by the present invention, the repair lines are formed together when the metal lines on a different layer from the data lines are formed. In the embodiment of the present invention, the repair lines are formed together when the scan lines are manufactured. In addition, the repair lines can be formed together when other shielding layers or common lines are manufactured. Using the method for repairing the matrix substrate of the active device proposed by the present invention to repair broken lines can repair multiple broken lines or a single data line with more than two breakpoints, and will not cause problems of signal delay and signal attenuation.

2. The repairing action of the present invention does not need to use laser chemical vapor deposition, but uses laser welding (laser welding), which can be repaired by laser welding on the back of the glass after the liquid crystal cell (cell) is formed. Therefore, the present invention can be used for repairing the high aperture ratio process using a low dielectric insulating layer, or when the disconnection defect is detected after the liquid crystal cell is assembled.

3. In the active device matrix substrate proposed by the present invention, between any two adjacent scanning lines, the first line segment and the second line segment of each data line are respectively located below the two adjacent pixel electrodes, and the matching point Driving methods such as inversion or column inversion can offset the effect of parasitic capacitance, so as to improve the display quality of the liquid crystal display panel.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Those skilled in the art may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection should be determined by what is defined in the claims.

Claims (13)

1. active device matrix base board comprises:

One substrate;

The multi-strip scanning line is disposed on this substrate;

Many data lines are disposed on this substrate, and between the wherein in office two adjacent sweep traces, each data line has the line segment that is connected that one first line segment, one second line segment and connect this first line segment and this second line segment; And

A plurality of pixel cells, be disposed on this substrate, and be electrically connected with corresponding this sweep trace and this data line respectively, between the wherein in office two adjacent sweep traces, this of each data line first line segment and this second line segment lay respectively at the below of two pixel cells that are adjacent;

Many assembly place the patch cord group on this substrate, and wherein each patch cord group connects line segment corresponding to one of them, and each patch cord group comprises one first patch cord and one second patch cord,

Wherein this first patch cord and this second patch cord and this data line electrical isolation, and this first patch cord and this second patch cord lay respectively at the offside of this corresponding connection line segment.

2. active device matrix base board as claimed in claim 1, wherein each pixel cell comprises:

One active device; And

One pixel electrode is electrically connected with corresponding scanning line and data line by this active device.

3. active device matrix base board as claimed in claim 2, between the wherein in office two adjacent sweep traces, this of each data line first line segment and this second line segment lay respectively at the below of two pixel electrodes that are adjacent.

4. active device matrix base board as claimed in claim 2 also comprises many concentric lines, is disposed on this substrate.

5. active device matrix base board as claimed in claim 2, wherein this pixel electrode is a rectangular electrode.

6. active device matrix base board as claimed in claim 2, wherein this pixel electrode has 2 first electrodes partly, lay respectively at one first reference line both sides and be connected to each other, and described first electrode partly is symmetrical in this first reference line.

7. active device matrix base board as claimed in claim 6, wherein said first electrode partly be shaped as parallelogram.

8. active device matrix base board as claimed in claim 6, wherein each first electrode partly has two and lays respectively at one second reference line both sides and second electrode connected to one another partly, and described second electrode partly is symmetrical in this second reference line.

9. active device matrix base board as claimed in claim 8, wherein said second electrode partly be shaped as parallelogram.

10. active device matrix base board as claimed in claim 1, between the wherein in office two adjacent sweep traces, the below that this first patch cord that each data line is other and this second patch cord lay respectively at two pixel electrodes that are adjacent.

11. the method for repairing and mending of an active device matrix base board, be suitable for repairing the data line in the described active device matrix base board of claim 10, the method for repairing and mending of this active device matrix base board comprises the end and corresponding this first line segment and this second line segment of terminal or this second patch cord that connects this first patch cord.

12. the method for repairing and mending of active device matrix base board as claimed in claim 11 wherein connects end and corresponding this first line segment and/or this second line segment that end and corresponding this first line segment and this second line segment of terminal or this second patch cord of this first patch cord comprise this first patch cord of laser welding.

13. the method for repairing and mending of active device matrix base board as claimed in claim 11, the end that wherein connects terminal or this second patch cord of this first patch cord comprises with the end of this second patch cord of laser welding and corresponding this first line segment and/or this second line segment with corresponding this first line segment and this second line segment.

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