CN100350008C - Polishing composition - Google Patents
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- CN100350008C CN100350008C CNB2004100076562A CN200410007656A CN100350008C CN 100350008 C CN100350008 C CN 100350008C CN B2004100076562 A CNB2004100076562 A CN B2004100076562A CN 200410007656 A CN200410007656 A CN 200410007656A CN 100350008 C CN100350008 C CN 100350008C
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Abstract
To provide a polishing composition that further increases the polishing speed, reduces the occurrence of defects on the polished surface of a material to be polished, reduces fine undulation on the surface of the material to be polished and makes it smooth.The polishing composition employs colloidal silica as the polishing material and includes methanesulfonic acid, hydrogen peroxide and water and is used for finish-polishing the surface of the substrate for a magnetic disc. Preferably the polishing composition contains a polishing accelerator such as citric acid, maleic acid and malic acid for increasing polishing speed and removing fine undulation on the surface of the substrate in a short time, and further contains phosphoric acid or its salt for reducing the occurrence of defects such as a scratch by forming a protective film on the surface of the substrate. (C)2004,JPO&NCIPI.
Description
Technical field
The present invention relates to a kind of polishing composition that is used to polish such as magnetic disk substrate etc.
Background technology
For the disk as the hard disk that serves as computer memory device, the exigent recording density of doing one's utmost.For this reason, magnetic disk substrate requires to have the surface of good characteristic, and for example, the surface roughness of reduction and the surface imperfection of reduction are as scratch.
Publication number is that the Japanese publication of 2000-109818 and Japanese publication that publication number is 2002-294225 disclose and satisfy the polishing composition that above-mentioned substrate requires after improving.Publication number is that the polishing composition of the Japanese publication of 2000-109818 comprises the alumina particle as abrasive, alkylsulphonic acid and water.Publication number is that the polishing composition in the Japanese publication of 2002-294225 comprises the silicon-dioxide as abrasive, as the hydrogen peroxide of oxygenant, with organic acid, and for example oxysuccinic acid and toxilic acid, and water.
But, often there is very important small ripple with the substrate surface after any polishing in the above-mentioned polishing composition, make slickness descend.In addition, above-mentioned polishing composition can not provide enough substrate polishing speeds.Here, small ripple refers to the trickle degree of irregularity that is created on the substrate surface owing to polishing.
Summary of the invention
Therefore, an object of the present invention is to provide a kind of polishing composition that is more suitable for being used for polishing magnetic disk substrate, and a kind of method of using this polishing composition polishing magnetic disk substrate.
Aforementioned in order to realize with other purposes and according to the intent of the present invention, a kind of polishing composition is provided.This polishing composition comprises silicon-dioxide, methylsulfonic acid, hydrogen peroxide and the water as abrasive.
Another aspect of the present invention provides a kind of finishing method.This method is the magnetic disk substrate that is used for polishing the surface with the surface roughness Ra that is no more than 30 dusts.This method comprises: preparation contains the silicon-dioxide as abrasive, methylsulfonic acid, the polishing composition of hydrogen peroxide and water; With the surface of using this polishing composition to polish described substrate.
The invention provides the method for another kind of polishing magnetic disk substrate.This method comprises: preparation contains the silicon-dioxide as abrasive, methylsulfonic acid, the polishing composition of hydrogen peroxide and water; The polishing substrate surface makes has the surface roughness Ra that is no more than 30 dusts; Make with the surface of the substrate that uses this polishing composition polishing to be polished and to have the surface roughness Ra that is no more than 30 dusts.
Embodiment
Following description will be discussed an embodiment of the invention.
For example, according to the silicon-dioxide that contains of present embodiment, methylsulfonic acid, the polishing composition of hydrogen peroxide and water is used to polish magnetic disk substrate.This substrate comprises that the chemical plating that will be made of nickel-phosphorus is placed on the substrate that forms on the blank that is made of aluminium alloy.
Above-mentioned silicon-dioxide is as the abrasive of mechanical polishing object.The object lesson of silicon-dioxide comprises colloid silica and smokeless silica (fumed silica).This polishing composition can comprise two or more silicon-dioxide.Colloid silica is more suitable for being used as the silicon-dioxide here.Colloid silica is made of in water with colloidal dispersion the amorphous silicon oxide particle of surface charging.Contain polishing composition as the colloid silica of abrasive reducing defective on the substrate surface effectively after the polishing, as the generation of scratch and groove.This colloid silica can obtain by several different methods, for example, to from ultra-fine colloid silica, remove water glass and potassium silicate by ion-exchange, pass through the method for grain growth technology again, with the method for using acid or alkali that alkyl silicon is hydrolyzed, or under moist system the method for heating and decomposition of organic compound.
For the abrasive except that silicon-dioxide, known have cerium oxide, diamond and an aluminum oxide.But those polishing compositions that contain the cerium oxide of replacement of silicon dioxide do not have the ability of high speed polishing substrate.Those polishing compositions that contain the diamond of replacement of silicon dioxide or aluminum oxide often polish the back and cause defective on substrate surfaces, such as scratch and groove.On the contrary, demonstrate the ability of high speed polishing substrate according to the polishing composition that contains as the silicon-dioxide of abrasive of present embodiment, and can after polishing, reduce substrate surface upper surface generation of defects.
Being used for the performance of polishing composition of polishing object and the object surfaces characteristic behind the polished polishing composition greatly is subjected to being included in the influence of the particle diameter of the silicon-dioxide in the polishing composition.Consider that from this point the median size preferable range of the silicon-dioxide that obtains is 0.005～0.5 micron, is 0.01～0.3 micron better from the particular table area that records with the BET method.Can not improve the polishing speed of polishing composition effectively less than 0.005 micron median size, that is to say the polishing speed of the polished polishing composition of object.In addition, because very big polishing resistance tends to produce vibration, this makes high-precision polishing process be difficult to carry out in polissoir.The median size that surpasses 0.5 micron produces deposition in polishing composition, cause the uneven surface of polished object and the scratch on polished surface.In addition, it is expensive having the silicon-dioxide that surpasses 0.5 micron median size.
The content of silicon-dioxide preferably in the scope of 0.01～40% weight, is better in the polishing composition, 0.1～10% weight.The content that is less than 0.01% weight can not improve the polishing speed of polishing composition effectively, and because very big polishing resistance trends towards producing vibration, this makes high-precision polishing process be difficult to carry out.The content that surpasses 40% weight makes silicon-dioxide assemble in polishing composition, causes the reduction of storage power.In addition, it is unfavorable aspect cost to contain the polishing composition of the silicon-dioxide that is no less than 40% weight.
Above-mentioned methylsulfonic acid plays the chemical rightenning object.Can suppress the generation of small ripple on the glossing mera surface according to the polishing composition that contains methylsulfonic acid of present embodiment, and with other acid that contain alternative methylsulfonic acid, polishing composition as ethyl sulfonic acid and/or propanesulfonic acid is compared, and substrate polishing ability better can also be provided.
The content of methylsulfonic acid preferably in the scope of 0.01～40% weight, is better in the polishing composition, 0.1～20% weight.If content is less than 0.01% weight, then polishing composition can not provide sufficiently high polishing speed.If content surpasses 40% weight, then might will be corroded by polissoir, and the cost of polishing composition will raise.
Above-mentioned hydrogen peroxide is as oxygenant, and oxide bulk is to quicken the mechanical polishing of abrasive.For the oxygenant beyond the hydrogen peroxide, known substances is as nitric acid, potassium permanganate and persulphate.But nitric acid can not provide enough oxidation susceptibilities, contains as the potassium permanganate of oxygenant or the polishing composition of persulphate to trend towards producing scratch on polished object.On the contrary, the hydrogen peroxide with enough oxidation susceptibilities is a kind of ep-type material and quite cheap.
The content of hydrogen peroxide preferably in the scope of 0.1～3.0% weight, is better in the polishing composition, 0.5～1.5% weight.If content is less than 0.1% weight, then polishing composition can not provide sufficiently high polishing speed, and trends towards producing defective after the polishing on substrate surface, such as scratch.The polishing composition that contains the hydrogen peroxide that surpasses 3.0% weight is expensive.
Above-mentioned water is as the medium that disperses or dissolves water other components in addition in polishing composition.Preferably the impurity in the water is minimized, and more specifically, be more suitable for using distilled water, pure water or ultrapure water.
Polishing composition according to present embodiment makes by mixed silica, methylsulfonic acid, hydrogen peroxide and water.Addition sequence for related component in mixing can use any order, and all components can add simultaneously.When mixing each component, can use blade type whipping appts or ultra-sonic dispersion device.
In order to improve polishing speed by oxidizing reaction, the pH value of polishing composition is in 1～4 scope preferably less than 7 better.If pH is 7 or bigger, then polishing composition can not provide sufficiently high polishing speed.Ph value less than 1 trends towards producing corrosion in polissoir, and therefore requires careful operation.
The polissoir that uses during with aforementioned polishing composition polishing substrate can be a single-sided polishing equipment, also can be twin polisher.For polishing underlay, can use any in non-woven fibre type liner, upper leather type liner, flocked fabric type liner and the fleecy fabric type liner.During polishing, when the polishing composition according to present embodiment was applied on the substrate surface, substrate surface was by the polishing underlay friction.After glossing is finished, washing and dry substrate surface.
In the manufacturing processed of substrate, carry out a plurality of polishing stages usually, be adapted at the last polishing stage according to the polishing composition of present embodiment and use.In other words, this polishing composition is preferred for the last polishing of substrate surface.Use carry out glossing according to the polishing composition in the present embodiment before, preferred substrate has the surface roughness Ra that is no more than 30 dusts.In other words, be preferred for being polished with the glossing of the substrate surface of the surfaceness that is no more than 30 dusts according to the polishing composition of present embodiment.
Present embodiment provides following advantage.
Polishing composition according to present embodiment contains the silicon-dioxide that is useful on the mechanical polishing object, is used for the methylsulfonic acid and the hydrogen peroxide that is used for the mechanical polishing of promote the oxidation silicon of chemical rightenning object; Therefore, this polishing composition has the high speed polishing object, special ability as magnetic disk substrate.In addition, be included in the generation that methylsulfonic acid in the polishing composition can suppress the lip-deep small ripple of glossing mera.Therefore, the polishing composition according to present embodiment is fit to be used for polishing magnetic disk substrate.
This should be conspicuous for those skilled in the art, and under the aim that does not deviate from the scope of the invention, the present invention can embody by other multiple specific forms.Especially it should be understood that the present invention can embody in the following manner.
Polishing composition can further comprise the polishing accelerator that is used for quickening abrasive mechanical polishing.The polishing accelerator can preferably include at least a compound that is selected from the group that is made of citric acid, toxilic acid, maleic anhydride, oxysuccinic acid, oxyacetic acid, succsinic acid, methylene-succinic acid, propanedioic acid, iminodiethanoic acid, gluconic acid, lactic acid, amygdalic acid, tartrate, butenoic acid, nicotinic acid, acetic acid, hexanodioic acid, glycine, Beta Alanine, Histidine, formic acid, oxalic acid and sulfuric acid.The polishing accelerator is more suitable for comprising at least a compound that is selected from the group that is made of citric acid, toxilic acid, oxysuccinic acid, succsinic acid and tartrate; The most suitablely comprise at least a compound that is selected from the group that constitutes by citric acid, toxilic acid and succsinic acid.Citric acid, toxilic acid, oxysuccinic acid, succsinic acid and tartrate quicken the mechanical polishing of abrasive effectively, and citric acid, toxilic acid and succsinic acid improve the storage stability of polishing composition by the decomposition that suppresses hydrogen peroxide.The content of polishing accelerator preferably in the scope of 0.01～40% weight, is more preferably 1～20% weight in the polishing composition.The content that is less than 0.01% weight can not fully improve the mechanical polishing function of abrasive.The content that surpasses 40% weight reaches saturation point the effect of the mechanical polishing function of quickening abrasive in fact.
Polishing composition can further comprise phosphoric acid and phosphoric acid salt.By forming on body surface with protective layer, phosphoric acid and phosphoric acid salt make it can suppress surface imperfection on the polished body surface, as the generation of scratch.Phosphatic object lesson comprises: ammonium phosphate (NH
4) H
2PO
4), Secondary ammonium phosphate ((NH
4)
2HPO
4), triammonium phosphate ((NH
4)
3PO
4), sodium phosphate (NaH
2PO
4), Di-Sodium Phosphate (Na
2HPO
4), tertiary sodium phosphate (Na
3PO
4), potassiumphosphate (KH
2PO
4), Rhodiaphos DKP (K
2HPO
4), Tripotassium phosphate (K
3PO
4).Phosphoric acid and phosphatic content preferably in the scope of 0.01～30% weight, are more preferably 1～10% weight in the polishing composition.The content that is less than 0.01% weight trends towards producing surface imperfection on polished object surfaces, surpasses the increase of the content polishing composition cost aspect of 30% weight.
If necessary, polishing composition can further comprise tensio-active agent, stopping agent, thickening material, sequestrant or defoamer.The example of tensio-active agent comprises poly carboxylic acid tensio-active agent and poly-sulfonic acid tensio-active agent, and example comprises Voranol EP 2001 sodium sulfate more specifically.The object lesson of stopping agent comprises benzotriazole.
This polishing composition can prepare the mixture of silicon-dioxide, methylsulfonic acid and water earlier with the blended method, mix with the mixture of previous preparation with hydrogen oxide immediately before use then to prepare.In addition, polishing composition can prepare by instant mixed silica, methylsulfonic acid, hydrogen peroxide and water before use.In these cases, can prevent the decline of the storage stability that the decomposition because of hydrogen peroxide in the polishing composition causes.
This polishing composition can be used to polish the magnetic disk substrate with the Ni-Fe coating that is formed on the aluminium alloy blank, perhaps is used for polishing the magnetic disk substrate that contains norbide or carbon.
This polishing composition can be used to polish magnetic disk substrate object in addition.The example of other objects beyond the magnetic disk substrate comprises the object that contains tungsten, copper, silicon, glass or pottery, and object lesson wherein comprises semiconductor wafer and optical lens.
This polishing composition can prepare by instant dilute with water stock solution before use.Stock solution and being used for dilutes the volume ratio of water of stock solution preferably in the scope of (1: 1)～(1: 7).
Following description will further be discussed the present invention by embodiment and comparing embodiment.
In embodiment 1～15, polishing composition makes by colloid mixture silicon-dioxide, methylsulfonic acid, hydrogen peroxide, organic acid, phosphoric acid salt and water.Among the embodiment 16 and 17, polishing composition makes by colloid mixture silicon-dioxide, methylsulfonic acid, hydrogen peroxide, organic acid and water.In embodiment 18 and 19, polishing composition makes by colloid mixture silicon-dioxide, methylsulfonic acid, hydrogen peroxide, phosphoric acid salt and water.In embodiment 20, polishing composition makes by colloid mixture silicon-dioxide, methylsulfonic acid, hydrogen peroxide and water.In comparing embodiment 1～5, polishing composition makes by any and the water in colloid mixture silicon-dioxide, methylsulfonic acid and the hydrogen peroxide.In comparing embodiment 6 and 7, polishing composition makes by colloid mixture silicon-dioxide, a kind of other alkylsulphonic acids, organic acid, phosphoric acid salt and water except that methylsulfonic acid.In comparing embodiment 8～10, preparation contains the polishing composition of the aluminum oxide of replacing silicon oxide.Embodiment 1～8 and 11～20 and comparing embodiment 1～7 in, using median size is 0.02 micron colloid silica.In embodiment 9, the use median size is 0.05 micron a colloid silica.In embodiment 10, the use median size is 0.08 micron a colloid silica.In comparing embodiment 8～10, the use median size is 0.5 micron a aluminum oxide.Concrete component in each polishing composition of table 1 expression.In the table 1, MSA represents methylsulfonic acid, and ESA represents ethyl sulfonic acid, and PSA represents propanesulfonic acid.
Table 1
| Embodiment 1 | Colloid silica 3wt% | MSA 1wt％ | H 2O 2 0.45wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Embodiment 2 | Colloid silica 3wt% | MSA 1wt％ | H 2O 2 0.9wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Embodiment 3 | Colloid silica 3wt% | MSA 1wt％ | H 2O 2 1.5wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Embodiment 4 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 0.45wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Embodiment 5 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 0.9wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Embodiment 6 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Embodiment 7 | Colloid silica 5wt% | MSA 2wt％ | H 2O 2 0.9wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Embodiment 8 | Colloid silica 8wt% | MSA 1wt％ | H 2O 2 0.9wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Embodiment 9 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Embodiment 10 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Embodiment 11 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | Oxysuccinic acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Embodiment 12 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | Tartrate 1wt% | (NH 4) 2HPO 4 0.4tw％ |
| Embodiment 13 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | Toxilic acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Embodiment 14 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | Citric acid 1wt% | (NH 4) 3PO 4 0.4wt％ |
| Embodiment 15 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | Citric acid 1wt% | Na 3PO 4 0.4wt％ |
| Embodiment 16 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | Citric acid 1wt% | - |
| Embodiment 17 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | Oxysuccinic acid 1wt% | |
| Embodiment 18 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | - | (NH 4) 2HPO 4 0.4wt％ |
| Embodiment 19 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | - | (NH 4) 3PO 4 0.4wt％ |
| Embodiment 20 | Colloid silica 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | - | - |
| Comparative example 1 | Colloid silica 5wt% | - | H 2O 2 1.5wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Comparative example 2 | Colloid silica 5wt% | - | H 2O 2 1.5wt％ | Citric acid 1wt% | - |
| Comparative example 3 | Colloid silica 5wt% | - | H 2O 2 1.5wt％ | - | (NH 4) 2HPO 4 0.4wt％ |
| Comparative example 4 | Colloid silica 5wt% | MSA 1wt％ | - | - | - |
| Comparative example 5 | Colloid silica 5wt% | MSA 1wt％ | - | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Comparative example 6 | Colloid silica 3wt% | ESA 1wt％ | H 2O 2 0.9wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Comparative example 7 | Colloid silica 3wt% | PSA 1wt％ | H 2O 2 0.9wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Comparative example 8 | Aluminum oxide 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | Citric acid 1wt% | (NH 4) 2HPO 4 0.4wt％ |
| Comparative example 9 | Aluminum oxide 5wt% | MSA 1wt％ | H 2O 2 1.5wt％ | - | - |
| Comparative example 10 | Aluminum oxide 5wt% | MSA 1wt％ | - | - | - |
Under the polishing condition below, on substrate surface, carry out glossing by the polishing composition that uses embodiment 1～15 and comparing embodiment 1～10 respectively.
Polishing condition:
Polished substrate: substrate with φ 3.5 inches (about 95mm) of the nickel-phosphorus coating that is formed on the aluminium alloy blank, this substrate tentatively has been polished to has the Ra value that is about 10 dusts, measures with the noncontact surface finish measurement equipment " Chapman MP2000PLUS " that Chapman (U.S.) makes.
Polissoir: twin polisher, " SFDL-9B ", and SPEEDFAM Co., Ltd. makes.
Polishing load: 80g/cm
2
Following fixed base revolution: 40 rev/mins
The supply of polishing composition: 100 ml/min
Polishing underlay: the upper leather type polishing underlay " N0058 " that Kanebo company makes
Polishing time: 4 minutes
Polished substrate number: 10
For the glossing that carries out under these conditions, polishing speed calculates according to following equation.The evaluation degree determined from the polishing speed that calculates is represented on the hurdle that table 2 acceptance of the bid is entitled as " polishing speed ", based on four grades in " polishing speed " hurdle in the table 3.
Polishing speed [micron/minute]=reduction [g] ÷ (area [cm of polished substrate surface of substrate because of polishing
2Density [the g/cm of] * nickel-phosphorus coating
3] * polishing time [minute] * 10
4
The lip-deep scratch number of glossing mera uses " MicroMax VMX2100 " to measure.The hurdle that table 2 acceptance of the bid is entitled as " scratch " represent from use 10 sample measurements to the evaluation degree determined of the mean value of scratch number, based on four grades in " scratch " hurdle in the table 3.
The lip-deep small ripple size of glossing mera uses " Chapman MP2000PLUS " to measure.The hurdle that table 2 acceptance of the bid is entitled as " small ripple " represent from use 10 sample measurements to the evaluation degree determined of the mean value of small ripple size, based on four grades in " small ripple " hurdle in the table 3.Here, when measuring small ripple, measuring wavelength set is 80～400 microns, and the magnification of object lens is set at 10 times.
Table 2
| Polishing speed | Scratch | Small ripple | |
| Embodiment 1 | ◎ | ◎ | ○ |
| Embodiment 2 | ◎ | ◎ | ○ |
| Embodiment 3 | ◎ | ◎ | ○ |
| Embodiment 4 | ◎ | ◎ | ○ |
| Embodiment 5 | ◎ | ◎ | ○ |
| Embodiment 6 | ◎ | ◎ | ○ |
| Embodiment 7 | ◎ | ◎ | ○ |
| Embodiment 8 | ◎ | ◎ | ○ |
| Embodiment 9 | ◎ | ◎ | ○ |
| Embodiment 10 | ◎ | ◎ | ○ |
| Embodiment 11 | ◎ | ◎ | ○ |
| Embodiment 12 | ◎ | ◎ | ○ |
| Embodiment 13 | ◎ | ◎ | ○ |
| Embodiment 14 | ◎ | ◎ | ○ |
| Embodiment 15 | ◎ | ◎ | ○ |
| Embodiment 16 | ◎ | ○ | ○ |
| Embodiment 17 | ◎ | ○ | ○ |
| Embodiment 18 | ○ | ◎ | ○ |
| Embodiment 19 | ○ | ◎ | ○ |
| Embodiment 20 | ○ | ○ | ○ |
| The comparative example 1 | △ | ◎ | ○ |
| The comparative example 2 | △ | ◎ | △ |
| The comparative example 3 | × | ○ | × |
| The comparative example 4 | × | × | × |
| The comparative example 5 | × | × | × |
| The comparative example 6 | ○ | ◎ | △ |
| The comparative example 7 | ○ | ◎ | △ |
| The comparative example 8 | ◎ | × | △ |
| The comparative example 9 | ◎ | × | × |
| The comparative example 10 | ◎ | × | × |
Table 3
| Judgement criteria | Polishing speed [micron/minute] | Scratch [number] | Small ripple [dust] |
| ◎ | Be not less than 0.13 | Less than 50 | - |
| ○ | 0.10～0.13 | 50～100 | Less than 0.7 |
| △ | 0.08～0.10 | 100～200 | 0.7～1.0 |
| × | Less than 0.08 | Be not less than 200 | Be not less than 1.0 |
As shown in table 2, in embodiment 1～20, any evaluation result of polishing speed, scratch and small ripple all is good.On the contrary, in comparing embodiment 1～10, at least one evaluation result in polishing speed, scratch and the small ripple is bad.
Therefore, currently execute example and embodiment should be considered to exemplary with nonrestrictive, the present invention is not subjected to the restriction of details given herein, and can change in the scope of the claim of enclosing and equivalence.
Claims (9)
1. a polishing composition comprises silicon-dioxide, methylsulfonic acid, hydrogen peroxide and water as abrasive.
2. polishing composition as claimed in claim 1 further comprises and contains at least a polishing accelerator that is selected from the compound in the group that is made of citric acid, toxilic acid, maleic anhydride, oxysuccinic acid, oxyacetic acid, succsinic acid, methylene-succinic acid, propanedioic acid, iminodiethanoic acid, gluconic acid, lactic acid, amygdalic acid, tartrate, butenoic acid, nicotinic acid, acetic acid, hexanodioic acid, glycine, L-Ala, Histidine, formic acid, oxalic acid and sulfuric acid.
3. polishing composition as claimed in claim 1 further comprises and contains at least a polishing accelerator that is selected from the compound in the group that is made of citric acid, toxilic acid, oxysuccinic acid, succsinic acid and tartrate.
4. polishing composition as claimed in claim 1 further comprises and contains at least a polishing accelerator that is selected from the compound in the group that is made of citric acid, toxilic acid and succsinic acid.
5. polishing composition as claimed in claim 1 further comprises phosphoric acid or phosphoric acid salt.
6. polishing composition as claimed in claim 1 is characterized in that, described silicon-dioxide is colloid silica.
7. polishing composition as claimed in claim 1 is characterized in that, described polishing composition is used for polishing at last the surface of magnetic disk substrate.
8. a method of polishing magnetic disk substrate is characterized in that, described substrate has the surface of the surfaceness that is no more than 30 dusts, and described method comprises:
Preparation contains the polishing composition of silicon-dioxide, methylsulfonic acid, hydrogen peroxide and water as abrasive; With the described surface of using described polishing composition polishing substrate.
9. method of polishing magnetic disk substrate, described method comprises:
Preparation contains the polishing composition of silicon-dioxide, methylsulfonic acid, hydrogen peroxide and water as abrasive;
The polishing substrate surface makes has the surface roughness Ra that is no more than 30 dusts; With
Use described polishing composition to polish the surface of the substrate that is polished.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003054867A JP4202157B2 (en) | 2003-02-28 | 2003-02-28 | Polishing composition |
| JP2003054867 | 2003-02-28 |
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|---|---|
| CN1532245A CN1532245A (en) | 2004-09-29 |
| CN100350008C true CN100350008C (en) | 2007-11-21 |
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|---|---|---|---|---|
| JP2006077127A (en) * | 2004-09-09 | 2006-03-23 | Fujimi Inc | Polishing composition and polishing method using the composition |
| EP1828333B1 (en) * | 2004-12-22 | 2011-10-19 | Showa Denko K.K. | Polishing composition and polishing method |
| JP2006315160A (en) * | 2005-05-16 | 2006-11-24 | Fuji Electric Holdings Co Ltd | Finish polishing method for glass substrate of magnetic disk |
| US20070068902A1 (en) * | 2005-09-29 | 2007-03-29 | Yasushi Matsunami | Polishing composition and polishing method |
| JP2008053371A (en) * | 2006-08-23 | 2008-03-06 | Fujifilm Corp | Polishing method of semiconductor device |
| US7955522B2 (en) * | 2008-02-26 | 2011-06-07 | General Electric Company | Synergistic acid blend extraction aid and method for its use |
| US8247326B2 (en) * | 2008-07-10 | 2012-08-21 | Cabot Microelectronics Corporation | Method of polishing nickel-phosphorous |
| JP5617387B2 (en) | 2010-07-06 | 2014-11-05 | 富士電機株式会社 | Method for manufacturing substrate for perpendicular magnetic recording medium, and substrate for perpendicular magnetic recording medium manufactured by the manufacturing method |
| CN102373014A (en) * | 2010-08-24 | 2012-03-14 | 安集微电子（上海）有限公司 | Chemical-mechanical polishing solution |
| JP6222907B2 (en) * | 2012-09-06 | 2017-11-01 | 株式会社フジミインコーポレーテッド | Polishing composition |
| SG11201509227PA (en) | 2013-05-15 | 2015-12-30 | Basf Se | Chemical-mechanical polishing compositions comprising n,n,n',n'-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid |
| US10745589B2 (en) * | 2016-06-16 | 2020-08-18 | Versum Materials Us, Llc | Chemical mechanical polishing (CMP) of cobalt-containing substrate |
| JP7058097B2 (en) * | 2017-09-29 | 2022-04-21 | 株式会社フジミインコーポレーテッド | Method for manufacturing polishing composition and magnetic disk substrate |
| CN109778190A (en) * | 2017-11-10 | 2019-05-21 | 深圳市华星光电技术有限公司 | A kind of Cu-MoTi etching solution |
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|---|---|---|---|---|
| JP2000109818A (en) * | 1998-10-02 | 2000-04-18 | Kao Corp | Composition of abrasive solution |
| CN1291630A (en) * | 1999-09-28 | 2001-04-18 | 不二见株式会社 | Polishing composition used for manufacturing storage hard disk and polishing method |
| CN1369530A (en) * | 2001-01-31 | 2002-09-18 | 不二见株式会社 | Polishing compsns. and polishing method using same |
| JP2002294225A (en) * | 2001-03-29 | 2002-10-09 | Fujimi Inc | Polishing composition and manufacturing method of memory hard disk using the same |
-
2003
- 2003-02-28 JP JP2003054867A patent/JP4202157B2/en not_active Expired - Lifetime
-
2004
- 2004-02-26 CN CNB2004100076562A patent/CN100350008C/en not_active Expired - Fee Related
- 2004-02-27 MY MYPI20040668 patent/MY143042A/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000109818A (en) * | 1998-10-02 | 2000-04-18 | Kao Corp | Composition of abrasive solution |
| CN1291630A (en) * | 1999-09-28 | 2001-04-18 | 不二见株式会社 | Polishing composition used for manufacturing storage hard disk and polishing method |
| CN1369530A (en) * | 2001-01-31 | 2002-09-18 | 不二见株式会社 | Polishing compsns. and polishing method using same |
| JP2002294225A (en) * | 2001-03-29 | 2002-10-09 | Fujimi Inc | Polishing composition and manufacturing method of memory hard disk using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| MY143042A (en) | 2011-02-28 |
| JP2004263074A (en) | 2004-09-24 |
| CN1532245A (en) | 2004-09-29 |
| JP4202157B2 (en) | 2008-12-24 |
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