CH588771A5 - - Google Patents

Info

Publication number: CH588771A5
Authority: CH; Switzerland

Application number

CH428675A

Original Assignee

Bulova Watch Co Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1974-04-08

Filing date

1975-04-05

Publication date

1977-06-15

1975-04-05 Application filed by Bulova Watch Co Inc filed Critical Bulova Watch Co Inc

1977-06-15 Publication of CH588771A5 publication Critical patent/CH588771A5/xx

Classifications

- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00369—Modifications for compensating variations of temperature, supply voltage or other physical parameters
- H03K19/00384—Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/354—Astable circuits
- H03K3/3545—Stabilisation of output, e.g. using crystal
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/02—Shaping pulses by amplifying
- H03K5/023—Shaping pulses by amplifying using field effect transistors
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/162—FETs are biased in the weak inversion region

Landscapes

Engineering & Computer Science (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Mathematical Physics (AREA)
Computing Systems (AREA)
General Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Nonlinear Science (AREA)
Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Amplifiers (AREA)
Oscillators With Electromechanical Resonators (AREA)
Logic Circuits (AREA)

CH428675A 1974-04-08 1975-04-05 CH588771A5 (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US459169A US3913026A (en)	1974-04-08	1974-04-08	Mos transistor gain block

Publications (1)

Publication Number	Publication Date
CH588771A5 true CH588771A5 (fr)	1977-06-15

Family

ID=23823688

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CH428675A CH588771A5 (fr)	1974-04-08	1975-04-05

Country Status (7)

Country	Link
US (1)	US3913026A (fr)
JP (1)	JPS50143459A (fr)
CA (1)	CA1027190A (fr)
CH (1)	CH588771A5 (fr)
DE (1)	DE2515309C3 (fr)
FR (1)	FR2275066A1 (fr)
GB (1)	GB1492222A (fr)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3946327A (en) *	1974-10-23	1976-03-23	Rca Corporation	Amplifier employing complementary field-effect transistors
US4071830A (en) *	1975-07-03	1978-01-31	Motorola, Inc.	Complementary field effect transistor linear amplifier
US4016434A (en) *	1975-09-04	1977-04-05	International Business Machines Corporation	Load gate compensator circuit
JPS5931863B2 (ja) *	1976-01-07	1984-08-04	株式会社日立製作所	電圧出力回路
US4093909A (en) *	1976-07-21	1978-06-06	General Electric Company	Method and apparatus for operating a semiconductor integrated circuit at minimum power requirements
JPS53148957A (en) *	1977-05-31	1978-12-26	Nec Corp	Switching circuit
US4135102A (en) *	1977-07-18	1979-01-16	Mostek Corporation	High performance inverter circuits
GB1592800A (en) *	1977-12-30	1981-07-08	Philips Electronic Associated	Linear amplifier
US4201947A (en) *	1978-02-10	1980-05-06	Rca Corporation	Long-tailed-pair connections of MOSFET's operated in sub-threshold region
US4224539A (en) *	1978-09-05	1980-09-23	Motorola, Inc.	FET Voltage level detecting circuit
US4260946A (en) *	1979-03-22	1981-04-07	Rca Corporation	Reference voltage circuit using nested diode means
US4275313A (en) *	1979-04-09	1981-06-23	Bell Telephone Laboratories, Incorporated	Current limiting output circuit with output feedback
US4323846A (en) *	1979-06-21	1982-04-06	Rockwell International Corporation	Radiation hardened MOS voltage generator circuit
US4306185A (en) *	1980-07-01	1981-12-15	Motorola, Inc.	Breakdown voltage protection circuit
JPS5750109A (en) *	1980-09-10	1982-03-24	Toshiba Corp	High impedance circuit for integrated circuit
US4347447A (en) *	1981-04-16	1982-08-31	Mostek Corporation	Current limiting MOS transistor driver circuit
EP0077771A1 (fr) *	1981-04-16	1983-05-04	Mostek Corporation	Circuit de commande de limitation d'intensite
JPS5886362U (ja) *	1981-12-07	1983-06-11	セイコーエプソン株式会社	オ−トカツタ−装置
EP0088291B1 (fr) *	1982-02-26	1985-07-10	Kabushiki Kaisha Toshiba	Circuit de commutation du type MOS
JPS58209206A (ja) *	1982-05-31	1983-12-06	Seiko Instr & Electronics Ltd	電子回路
JPS59151510A (ja) *	1983-02-18	1984-08-30	Hitachi Ltd	Ｃ−ｍｏｓ負荷型増幅器
FR2542526A1 (fr) *	1983-03-09	1984-09-14	American Telephone & Telegraph	Oscillateur a quartz
US4614882A (en) *	1983-11-22	1986-09-30	Digital Equipment Corporation	Bus transceiver including compensation circuit for variations in electrical characteristics of components
US4667256A (en) *	1985-11-25	1987-05-19	Eastman Kodak Company	Circuit for electro-optic modulators
DE19534065A1 (de) *	1995-09-14	1996-07-04	Telefunken Microelectron	Spannungsverstärkerstufe
JP3508401B2 (ja) *	1996-07-12	2004-03-22	富士通株式会社	増幅回路および多段増幅回路
US5990744A (en) *	1997-11-21	1999-11-23	Lucent Technologies Inc.	Wide band process independent gain controllable amplifier stage
GB2416255A (en) *	2004-07-12	2006-01-18	Toumaz Technology Ltd	CMOS current mode logic circuits using subthreshold conduction for low power operation
DE102006008284B3 (de) *	2006-02-22	2007-10-25	Infineon Technologies Ag	Schaltung mit einer Anordnung zur Detektion einer unterbrochenen Anschlussleitung
JP2012203528A (ja) *	2011-03-24	2012-10-22	Seiko Instruments Inc	ボルテージ・レギュレータ
FI20150294A (fi) *	2015-10-23	2017-04-24	Ari Paasio	Matalan tehonkulutuksen logiikkaperhe

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3289093A (en) *	1964-02-20	1966-11-29	Fairchild Camera Instr Co	A. c. amplifier using enhancement-mode field effect devices
US3508084A (en) *	1967-10-06	1970-04-21	Texas Instruments Inc	Enhancement-mode mos circuitry
US3518584A (en) *	1968-07-25	1970-06-30	Bell Telephone Labor Inc	Gyrator circuit utilizing a plurality of cascaded pairs of insulated-gate,field effect transistors
US3823332A (en) *	1970-01-30	1974-07-09	Rca Corp	Mos fet reference voltage supply
JPS5211199B1 (fr) *	1970-05-27	1977-03-29
US3638047A (en) *	1970-07-07	1972-01-25	Gen Instrument Corp	Delay and controlled pulse-generating circuit
FR2143553B1 (fr) *	1971-06-29	1974-05-31	Sescosem
JPS5334701B2 (fr) *	1971-09-30	1978-09-21
US3775693A (en) *	1971-11-29	1973-11-27	Moskek Co	Mosfet logic inverter for integrated circuits
US3789246A (en) *	1972-02-14	1974-01-29	Rca Corp	Insulated dual gate field-effect transistor signal translator having means for reducing its sensitivity to supply voltage variations
US3806741A (en) *	1972-05-17	1974-04-23	Standard Microsyst Smc	Self-biasing technique for mos substrate voltage

1974
- 1974-04-08 US US459169A patent/US3913026A/en not_active Expired - Lifetime
1975
- 1975-04-02 CA CA223,615A patent/CA1027190A/fr not_active Expired
- 1975-04-04 FR FR7510635A patent/FR2275066A1/fr active Granted
- 1975-04-05 CH CH428675A patent/CH588771A5/xx not_active IP Right Cessation
- 1975-04-08 DE DE2515309A patent/DE2515309C3/de not_active Expired
- 1975-04-08 JP JP50042724A patent/JPS50143459A/ja active Pending
- 1975-04-08 GB GB14433/75A patent/GB1492222A/en not_active Expired

Also Published As

Publication number	Publication date
GB1492222A (en)	1977-11-16
FR2275066B1 (fr)	1978-02-03
CA1027190A (fr)	1978-02-28
FR2275066A1 (fr)	1976-01-09
DE2515309C3 (de)	1978-03-16
DE2515309A1 (de)	1975-10-16
DE2515309B2 (de)	1977-07-28
JPS50143459A (fr)	1975-11-18
US3913026A (en)	1975-10-14

Publication	Publication Date	Title
AU495883B2 (fr)	1977-03-03
AR198563A1 (fr)	1974-06-28
AU7463174A (fr)	1976-04-29
BG20903A1 (fr)	1976-01-20
BG20454A1 (fr)	1975-12-05
AU479624A (fr)	1975-08-28
AU479683A (fr)	1975-07-10
AU480470A (fr)	1975-01-30
AU481065A (fr)	1974-09-12
AU481340A (fr)	1975-10-02
AU481580A (fr)	1975-09-04
AU481825A (fr)	1975-03-13
BG20915A1 (fr)	1976-01-20
BE827113A (fr)	1975-07-16
BE836340A (fr)	1976-04-01
BG19609A2 (fr)	1975-10-10
BG19619A1 (fr)	1975-10-10
BG19638A1 (fr)	1975-10-10
BG19680A1 (fr)	1975-10-10
BG19690A1 (fr)	1975-10-10
BG19739A1 (fr)	1975-10-10
BG19774A1 (fr)	1975-10-10
BG19962A1 (fr)	1975-10-30
BG19987A1 (fr)	1975-10-30
BG19990A1 (fr)	1977-05-20

Legal Events

Date	Code	Title	Description
1980-12-31	PL	Patent ceased
2024-10-31	PL	Patent ceased