CH580339A5 - - Google Patents
Info
- Publication number
- CH580339A5 CH580339A5 CH1724074A CH1724074A CH580339A5 CH 580339 A5 CH580339 A5 CH 580339A5 CH 1724074 A CH1724074 A CH 1724074A CH 1724074 A CH1724074 A CH 1724074A CH 580339 A5 CH580339 A5 CH 580339A5
- Authority
- CH
- Switzerland
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/241—Asymmetrical thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1724074A CH580339A5 (de) | 1974-12-23 | 1974-12-23 | |
DE2507104A DE2507104C2 (de) | 1974-12-23 | 1975-02-19 | Thyristor für hohe Frequenzen |
JP50149411A JPS6012789B2 (ja) | 1974-12-23 | 1975-12-15 | 2つの安定状態を有する高周波用の半導体素子 |
US05/642,551 US4081821A (en) | 1974-12-23 | 1975-12-19 | Bistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1724074A CH580339A5 (de) | 1974-12-23 | 1974-12-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH580339A5 true CH580339A5 (de) | 1976-09-30 |
Family
ID=4423856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1724074A CH580339A5 (de) | 1974-12-23 | 1974-12-23 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4081821A (de) |
JP (1) | JPS6012789B2 (de) |
CH (1) | CH580339A5 (de) |
DE (1) | DE2507104C2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5942989B2 (ja) * | 1977-01-24 | 1984-10-18 | 株式会社日立製作所 | 高耐圧半導体素子およびその製造方法 |
US4278476A (en) * | 1979-12-05 | 1981-07-14 | Westinghouse Electric Corp. | Method of making ion implanted reverse-conducting thyristor |
JPS57201076A (en) * | 1981-06-03 | 1982-12-09 | Fuji Electric Corp Res & Dev Ltd | Photo-arc thyristor |
JPS5896764A (ja) * | 1981-12-03 | 1983-06-08 | Toshiba Corp | ゲ−トタ−ンオフサイリスタ |
EP0283788A1 (de) * | 1987-03-09 | 1988-09-28 | Siemens Aktiengesellschaft | Abschaltbares Leistungshalbleiterbauelement |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL272752A (de) * | 1960-12-20 | |||
GB1052447A (de) * | 1962-09-15 | |||
US3277352A (en) * | 1963-03-14 | 1966-10-04 | Itt | Four layer semiconductor device |
DE1514520B1 (de) * | 1965-07-30 | 1971-04-01 | Siemens Ag | Steuerbares Halbleiterbauelement |
DE1514655A1 (de) * | 1965-12-30 | 1969-08-28 | Siemens Ag | Lawinendiode zur Schwingungserzeugung unter quasistationaeren Bedingungen unterhalb der Grenzfrequenz fuer den Laufzeitfall |
DE1589453A1 (de) * | 1966-06-28 | 1970-04-02 | Asea Ab | Halbleiteranordnung |
US3900771A (en) * | 1970-11-25 | 1975-08-19 | Gerhard Krause | Transistor with high current density |
US3914781A (en) * | 1971-04-13 | 1975-10-21 | Sony Corp | Gate controlled rectifier |
US3943549A (en) * | 1972-03-15 | 1976-03-09 | Bbc Brown, Boveri & Company, Limited | Thyristor |
-
1974
- 1974-12-23 CH CH1724074A patent/CH580339A5/xx not_active IP Right Cessation
-
1975
- 1975-02-19 DE DE2507104A patent/DE2507104C2/de not_active Expired
- 1975-12-15 JP JP50149411A patent/JPS6012789B2/ja not_active Expired
- 1975-12-19 US US05/642,551 patent/US4081821A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE2507104C2 (de) | 1984-08-09 |
US4081821A (en) | 1978-03-28 |
JPS5186983A (en) | 1976-07-30 |
DE2507104A1 (de) | 1976-07-01 |
JPS6012789B2 (ja) | 1985-04-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased | ||
PL | Patent ceased |