GB1052447A - - Google Patents
Info
- Publication number
- GB1052447A GB1052447A GB1052447DA GB1052447A GB 1052447 A GB1052447 A GB 1052447A GB 1052447D A GB1052447D A GB 1052447DA GB 1052447 A GB1052447 A GB 1052447A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafer
- current
- zone
- doped
- recombination centres
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000011888 foil Substances 0.000 abstract 3
- 238000005215 recombination Methods 0.000 abstract 3
- 230000006798 recombination Effects 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 230000000694 effects Effects 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 238000009826 distribution Methods 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 239000004922 lacquer Substances 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/645—Combinations of only lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1962S0081478 DE1214790C2 (de) | 1962-09-15 | 1962-09-15 | Leistungsgleichrichter mit einkristallinem Halbleiterkoerper und vier Schichten abwechselnden Leitfaehigkeitstyps |
| FR18571A FR88265E (fr) | 1962-09-15 | 1965-05-26 | Redresseur pnpn pour courants forts et son procédé de fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1052447A true GB1052447A (de) |
Family
ID=25996996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1052447D Active GB1052447A (de) | 1962-09-15 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3349299A (de) |
| CH (1) | CH416839A (de) |
| DE (1) | DE1214790C2 (de) |
| FR (1) | FR88265E (de) |
| GB (1) | GB1052447A (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4081821A (en) * | 1974-12-23 | 1978-03-28 | Bbc Brown Boveri & Company Limited | Bistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivity |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3356543A (en) * | 1964-12-07 | 1967-12-05 | Rca Corp | Method of decreasing the minority carrier lifetime by diffusion |
| US3390022A (en) * | 1965-06-30 | 1968-06-25 | North American Rockwell | Semiconductor device and process for producing same |
| GB1155978A (en) * | 1965-10-28 | 1969-06-25 | Matsushita Electric Ind Co Ltd | Pressure-Responsive Semiconductor Device. |
| DE1614410B2 (de) * | 1967-01-25 | 1973-12-13 | Siemens Ag, 1000 Berlin U. 8000 Muenchen | Halbleiterbauelement |
| US3628107A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with peripheral protective junction |
| GB1410726A (en) * | 1972-01-24 | 1975-10-22 | Licentia Gmbh | Thyristor with increased switching on an switching through speed |
| DE2333429C3 (de) * | 1973-06-30 | 1984-01-05 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Thyristor und Verfahren zu seiner Herstellung |
| JPS5230389A (en) * | 1975-09-03 | 1977-03-08 | Hitachi Ltd | Thyristor |
| US4112458A (en) * | 1976-01-26 | 1978-09-05 | Cutler-Hammer, Inc. | Silicon thyristor sensitive to low temperature with thermal switching characteristics at temperatures less than 50° C |
| JPS594075A (ja) * | 1982-06-30 | 1984-01-10 | Toshiba Corp | サイリスタ |
| GB2359415A (en) * | 2000-02-21 | 2001-08-22 | Westcode Semiconductors Ltd | Profiling of semiconductor wafer to prevent edge breakdown |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3036226A (en) * | 1958-12-15 | 1962-05-22 | Ibm | Negative resistance semiconductor circuit utilizing four-layer transistor |
| NL239104A (de) * | 1958-05-26 | 1900-01-01 | Western Electric Co | |
| US2997604A (en) * | 1959-01-14 | 1961-08-22 | Shockley William | Semiconductive device and method of operating same |
| US2980832A (en) * | 1959-06-10 | 1961-04-18 | Westinghouse Electric Corp | High current npnp switch |
| US3064132A (en) * | 1959-11-10 | 1962-11-13 | Westinghouse Electric Corp | Semiconductor device |
| NL265766A (de) * | 1960-06-10 | |||
| US3124703A (en) * | 1960-06-13 | 1964-03-10 | Figure | |
| US3210560A (en) * | 1961-04-17 | 1965-10-05 | Westinghouse Electric Corp | Semiconductor device |
| NL275313A (de) * | 1961-05-10 |
-
0
- GB GB1052447D patent/GB1052447A/en active Active
-
1962
- 1962-09-15 DE DE1962S0081478 patent/DE1214790C2/de not_active Expired
-
1963
- 1963-06-25 CH CH788363A patent/CH416839A/de unknown
- 1963-09-13 US US308830A patent/US3349299A/en not_active Expired - Lifetime
-
1965
- 1965-05-26 FR FR18571A patent/FR88265E/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4081821A (en) * | 1974-12-23 | 1978-03-28 | Bbc Brown Boveri & Company Limited | Bistable semiconductor component for high frequencies having four zones of alternating opposed types of conductivity |
Also Published As
| Publication number | Publication date |
|---|---|
| FR88265E (fr) | 1967-01-06 |
| DE1214790C2 (de) | 1973-08-30 |
| CH416839A (de) | 1966-07-15 |
| US3349299A (en) | 1967-10-24 |
| DE1214790B (de) | 1966-04-21 |
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