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CH482299A - Verfahren zum Dotieren eines Siliciumkörpers - Google Patents

Verfahren zum Dotieren eines Siliciumkörpers

Info

Publication number
CH482299A
CH482299A CH35166A CH35166A CH482299A CH 482299 A CH482299 A CH 482299A CH 35166 A CH35166 A CH 35166A CH 35166 A CH35166 A CH 35166A CH 482299 A CH482299 A CH 482299A
Authority
CH
Switzerland
Prior art keywords
doping
silicon body
silicon
Prior art date
Application number
CH35166A
Other languages
English (en)
Inventor
Joachim Dipl Phys Dathe
Mueller Wolfgang Dr Dipl-Phys
Ghosh-Dastidar Shib
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH482299A publication Critical patent/CH482299A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/974Substrate surface preparation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Formation Of Insulating Films (AREA)
CH35166A 1965-01-13 1966-01-11 Verfahren zum Dotieren eines Siliciumkörpers CH482299A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0094987 1965-01-13

Publications (1)

Publication Number Publication Date
CH482299A true CH482299A (de) 1969-11-30

Family

ID=7519067

Family Applications (1)

Application Number Title Priority Date Filing Date
CH35166A CH482299A (de) 1965-01-13 1966-01-11 Verfahren zum Dotieren eines Siliciumkörpers

Country Status (8)

Country Link
US (1) US3498853A (de)
AT (1) AT259016B (de)
CH (1) CH482299A (de)
DE (1) DE1544257A1 (de)
FR (1) FR1463489A (de)
GB (1) GB1115101A (de)
NL (1) NL6516911A (de)
SE (1) SE334421B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764004A1 (de) * 1968-03-20 1971-04-08 Siemens Ag Verfahren zum Herstellen eines Hochfrequenztransistors aus Silicium
DE2408829C2 (de) * 1974-02-23 1984-03-22 Ibm Deutschland Gmbh, 7000 Stuttgart Bor-Ionenquell-Material und Verfahren zu seiner Herstellung
CN104557532B (zh) * 2015-01-13 2017-03-01 西安力邦制药有限公司 二联苯衍生物及其应用
CN114823977B (zh) * 2022-04-25 2024-02-23 中国科学技术大学 氧化镓光电探测器的制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon
US3147152A (en) * 1960-01-28 1964-09-01 Western Electric Co Diffusion control in semiconductive bodies
NL260906A (de) * 1960-02-12
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
US3210225A (en) * 1961-08-18 1965-10-05 Texas Instruments Inc Method of making transistor
GB1052379A (de) * 1963-03-28 1900-01-01
US3258359A (en) * 1963-04-08 1966-06-28 Siliconix Inc Semiconductor etch and oxidation process
US3255056A (en) * 1963-05-20 1966-06-07 Rca Corp Method of forming semiconductor junction

Also Published As

Publication number Publication date
GB1115101A (en) 1968-05-29
AT259016B (de) 1967-12-27
DE1544257A1 (de) 1970-03-26
US3498853A (en) 1970-03-03
FR1463489A (fr) 1966-12-23
NL6516911A (de) 1966-07-14
SE334421B (de) 1971-04-26

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Legal Events

Date Code Title Description
PL Patent ceased