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CH407051A - Process for growing crystals from a melt and apparatus for carrying out this process - Google Patents

Process for growing crystals from a melt and apparatus for carrying out this process

Info

Publication number
CH407051A
CH407051A CH499660A CH499660A CH407051A CH 407051 A CH407051 A CH 407051A CH 499660 A CH499660 A CH 499660A CH 499660 A CH499660 A CH 499660A CH 407051 A CH407051 A CH 407051A
Authority
CH
Switzerland
Prior art keywords
melt
carrying
growing crystals
crystals
growing
Prior art date
Application number
CH499660A
Other languages
German (de)
Inventor
Okkerse Boudewijn
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH407051A publication Critical patent/CH407051A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH499660A 1959-05-05 1960-05-02 Process for growing crystals from a melt and apparatus for carrying out this process CH407051A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL238924 1959-05-05

Publications (1)

Publication Number Publication Date
CH407051A true CH407051A (en) 1966-02-15

Family

ID=19751707

Family Applications (1)

Application Number Title Priority Date Filing Date
CH499660A CH407051A (en) 1959-05-05 1960-05-02 Process for growing crystals from a melt and apparatus for carrying out this process

Country Status (5)

Country Link
US (1) US3033660A (en)
CH (1) CH407051A (en)
DE (1) DE1136670B (en)
GB (1) GB953538A (en)
NL (1) NL238924A (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3241925A (en) * 1960-08-19 1966-03-22 Union Carbide Corp Apparatus for growing solid homogeneous compositions
DE1217926B (en) * 1963-08-17 1966-06-02 Siemens Ag Method for avoiding streaks in metal or semiconductor crystals
DE1251721B (en) * 1963-10-28 1967-10-12 Siemens Aktiengesellschaft, Berlin und München München Method for producing semiconductor stalls, preferably semiconductor stalls with adjustable, for example constant, foreign matter concentration
DE1245318B (en) * 1963-11-16 1967-07-27 Siemens Ag Apparatus for producing crystals by pulling them from the melt
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
US3493348A (en) * 1966-07-01 1970-02-03 Ibm Buoyant device in crystal growing
US3471266A (en) * 1967-05-29 1969-10-07 Tyco Laboratories Inc Growth of inorganic filaments
US3765843A (en) * 1971-07-01 1973-10-16 Tyco Laboratories Inc Growth of tubular crystalline bodies
US3853489A (en) * 1971-11-08 1974-12-10 Tyco Laboratories Inc A non-wetting aid for growing crystalline bodies
BE791024A (en) * 1971-11-08 1973-05-07 Tyco Laboratories Inc PROCESS FOR DEVELOPING CRYSTALS FROM A BATH OF A MATERIAL
US3755011A (en) * 1972-06-01 1973-08-28 Rca Corp Method for depositing an epitaxial semiconductive layer from the liquid phase
US3870477A (en) * 1972-07-10 1975-03-11 Tyco Laboratories Inc Optical control of crystal growth
US4125425A (en) * 1974-03-01 1978-11-14 U.S. Philips Corporation Method of manufacturing flat tapes of crystalline silicon from a silicon melt by drawing a seed crystal of silicon from the melt flowing down the faces of a knife shaped heated element
US4000030A (en) * 1975-06-09 1976-12-28 International Business Machines Corporation Method for drawing a monocrystal from a melt formed about a wettable projection
DE3480721D1 (en) * 1984-08-31 1990-01-18 Gakei Denki Seisakusho METHOD AND DEVICE FOR PRODUCING SINGLE CRYSTALS.
JPH0628234B2 (en) * 1984-10-05 1994-04-13 株式会社日立製作所 GaAs single crystal and semiconductor device
US5733805A (en) * 1984-10-05 1998-03-31 Hitachi, Ltd. Method of fabricating semiconductor device utilizing a GaAs single crystal
JPS6379790A (en) * 1986-09-22 1988-04-09 Toshiba Corp Crystal pulling up device
GB8718643D0 (en) * 1987-08-06 1987-09-09 Atomic Energy Authority Uk Single crystal pulling
US4968380A (en) * 1989-05-24 1990-11-06 Mobil Solar Energy Corporation System for continuously replenishing melt
US5650008A (en) * 1995-12-01 1997-07-22 Advanced Materials Processing, Llc Method for preparing homogeneous bridgman-type single crystals
JP4059943B2 (en) * 1996-10-24 2008-03-12 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Melt receive of semiconductor single crystal manufacturing equipment
US6809027B2 (en) * 2002-06-06 2004-10-26 International Business Machines Corporation Self-aligned borderless contacts
CN103764880B (en) * 2011-08-26 2016-10-26 康萨克公司 Consumable electrode vacuum arc smelting process is utilized to carry out refine metalloid
CN112853471A (en) * 2021-01-15 2021-05-28 广州皇标科技有限公司 Single crystal furnace for processing photovoltaic cell
CN112899773A (en) * 2021-01-15 2021-06-04 广州皇标科技有限公司 Silicon preparation method for processing photovoltaic cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1552884A (en) * 1925-04-08 1925-09-08 Schnurpfeil Hans Pot for melting glass
NL107897C (en) * 1953-05-18
US2793103A (en) * 1954-02-24 1957-05-21 Siemens Ag Method for producing rod-shaped bodies of crystalline material

Also Published As

Publication number Publication date
DE1136670B (en) 1962-09-20
GB953538A (en) 1964-03-25
NL238924A (en)
US3033660A (en) 1962-05-08

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