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CH412816A - Process for the continuous production of dendritic semiconductor crystals and apparatus for carrying out the process - Google Patents

Process for the continuous production of dendritic semiconductor crystals and apparatus for carrying out the process

Info

Publication number
CH412816A
CH412816A CH1287960A CH1287960A CH412816A CH 412816 A CH412816 A CH 412816A CH 1287960 A CH1287960 A CH 1287960A CH 1287960 A CH1287960 A CH 1287960A CH 412816 A CH412816 A CH 412816A
Authority
CH
Switzerland
Prior art keywords
carrying
continuous production
semiconductor crystals
dendritic
dendritic semiconductor
Prior art date
Application number
CH1287960A
Other languages
German (de)
Inventor
L Longini Richard
I Jr Bennett Allan
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of CH412816A publication Critical patent/CH412816A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH1287960A 1959-11-19 1960-11-17 Process for the continuous production of dendritic semiconductor crystals and apparatus for carrying out the process CH412816A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85413459A 1959-11-19 1959-11-19

Publications (1)

Publication Number Publication Date
CH412816A true CH412816A (en) 1966-05-15

Family

ID=25317822

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1287960A CH412816A (en) 1959-11-19 1960-11-17 Process for the continuous production of dendritic semiconductor crystals and apparatus for carrying out the process

Country Status (2)

Country Link
CH (1) CH412816A (en)
GB (1) GB913676A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4022652A (en) * 1974-09-26 1977-05-10 Tokyo Shibaura Electric Co., Ltd. Method of growing multiple monocrystalline layers
US4078897A (en) * 1975-04-11 1978-03-14 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US4186173A (en) * 1975-04-11 1980-01-29 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US6143633A (en) * 1995-10-05 2000-11-07 Ebara Solar, Inc. In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4022652A (en) * 1974-09-26 1977-05-10 Tokyo Shibaura Electric Co., Ltd. Method of growing multiple monocrystalline layers
US4078897A (en) * 1975-04-11 1978-03-14 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US4186173A (en) * 1975-04-11 1980-01-29 Leybold-Heraeus Gmbh & Co. Kg Apparatus for producing monocrystals
US6143633A (en) * 1995-10-05 2000-11-07 Ebara Solar, Inc. In-situ diffusion of dopant impurities during dendritic web growth of crystal ribbon

Also Published As

Publication number Publication date
GB913676A (en) 1962-12-28

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