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CH401918A - Verfahren zum Herstellen von langgestreckten, insbesondere bandförmigen Halbleiterkörpern - Google Patents

Verfahren zum Herstellen von langgestreckten, insbesondere bandförmigen Halbleiterkörpern

Info

Publication number
CH401918A
CH401918A CH1454061A CH1454061A CH401918A CH 401918 A CH401918 A CH 401918A CH 1454061 A CH1454061 A CH 1454061A CH 1454061 A CH1454061 A CH 1454061A CH 401918 A CH401918 A CH 401918A
Authority
CH
Switzerland
Prior art keywords
shaped semiconductor
semiconductor bodies
particular band
producing elongated
elongated
Prior art date
Application number
CH1454061A
Other languages
English (en)
Inventor
Werner Dr Spielmann
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH401918A publication Critical patent/CH401918A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH1454061A 1961-03-09 1961-12-14 Verfahren zum Herstellen von langgestreckten, insbesondere bandförmigen Halbleiterkörpern CH401918A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES72899A DE1222476B (de) 1961-03-09 1961-03-09 Verfahren zum Herstellen von langgestreckten, insbesondere dendritischen Halbleiterkoerpern durch Ziehen aus einer Schmelze

Publications (1)

Publication Number Publication Date
CH401918A true CH401918A (de) 1965-11-15

Family

ID=7503551

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1454061A CH401918A (de) 1961-03-09 1961-12-14 Verfahren zum Herstellen von langgestreckten, insbesondere bandförmigen Halbleiterkörpern

Country Status (4)

Country Link
US (1) US3275419A (de)
CH (1) CH401918A (de)
DE (1) DE1222476B (de)
GB (1) GB932758A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617392A (en) * 1968-10-29 1971-11-02 Semimetals Inc Power control for crystal growing
GB1434527A (en) * 1972-09-08 1976-05-05 Secr Defence Growth of crystalline material
US4220626A (en) * 1978-04-13 1980-09-02 Monsanto Company RF Induction heating circuits for float zone refining of semiconductor rods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE962006C (de) * 1954-07-01 1957-04-18 Siemens Ag Verfahren zum induktiven Schmelzen, insbesondere Zonenziehen, von Halbleitern mittels einer Hochfrequenzspule
US2927008A (en) * 1956-10-29 1960-03-01 Shockley Transistor Corp Crystal growing apparatus
FR1235341A (fr) * 1958-03-05 1960-07-08 Siemens Ag Procédé et appareil de fabrication continue de tiges mono-cristallines minces
DE1153908B (de) * 1958-04-22 1963-09-05 Siemens Ag Verfahren und Vorrichtung zum tiegellosen Zonenschmelzen mit Abstandsaenderung der Stabenden
GB904100A (en) * 1959-09-11 1962-08-22 Siemens Ag A process for zone-by-zone melting of a rod of semi-conductor material using an induction coil as the heating means and an automatic arrangement for controlling the current through the coil
NL255530A (de) * 1959-09-11
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods

Also Published As

Publication number Publication date
GB932758A (en) 1963-07-31
US3275419A (en) 1966-09-27
DE1222476B (de) 1966-08-11

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