CH395554A - Verfahren zur Herstellung von versetzungsfreiem einkristallinem Silizium durch tiegelfreies Zonenschmelzen - Google Patents

Verfahren zur Herstellung von versetzungsfreiem einkristallinem Silizium durch tiegelfreies Zonenschmelzen

Info

Publication number: CH395554A
Authority: CH; Switzerland
Prior art keywords: free; dislocation; crucible; production; single crystal
Prior art date: 1960-11-25

Application number

CH721561A

Other languages

English (en)

Inventor

Wolfgang Dr Keller

Guenther Dr Ziegler

Original Assignee

Siemens Ag

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1960-11-25

Filing date

1961-06-20

Publication date

1965-07-15

1961-06-20 Application filed by Siemens Ag filed Critical Siemens Ag

1965-07-15 Publication of CH395554A publication Critical patent/CH395554A/de

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/38—Means for extinguishing or suppressing arc
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/38—Means for extinguishing or suppressing arc
- H01H2085/386—Means for extinguishing or suppressing arc with magnetic or electrodynamic arc-blowing
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1084—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Silicon Compounds (AREA)
Fuses (AREA)

CH721561A 1960-11-25 1961-06-20 Verfahren zur Herstellung von versetzungsfreiem einkristallinem Silizium durch tiegelfreies Zonenschmelzen CH395554A (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
DES71415A DE1128413B (de)	1960-11-25	1960-11-25	Verfahren zur Herstellung von zersetzungsfreiem einkristallinem Silicium durch tiegelfreies Zonenschmelzen

Publications (1)

Publication Number	Publication Date
CH395554A true CH395554A (de)	1965-07-15

Family

ID=7502452

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
CH721561A CH395554A (de)	1960-11-25	1961-06-20	Verfahren zur Herstellung von versetzungsfreiem einkristallinem Silizium durch tiegelfreies Zonenschmelzen

Country Status (7)

Country	Link
US (1)	US3175891A (de)
BE (1)	BE610603A (de)
CH (1)	CH395554A (de)
DE (1)	DE1128413B (de)
GB (2)	GB926487A (de)
NL (2)	NL266876A (de)
SE (1)	SE306303B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL6411697A (de) *	1963-10-15	1965-04-20
DE1224273B (de) *	1964-06-23	1966-09-08	Siemens Ag	Vorrichtung zum tiegelfreien Zonenschmelzen
BE789637A (fr) *	1972-10-03	1973-04-03	Elphiac Sa	Procede de fabrication de monocristaux et installation pour executer ceprocede.
DE2356376A1 (de) *	1973-11-12	1975-05-15	Siemens Ag	Verfahren zum herstellen von homogen dotierten siliciumeinkristallen mit n-leitfaehigkeit durch neutronenbestrahlung

1960
- 1960-08-24 GB GB29190/60A patent/GB926487A/en not_active Expired
- 1960-11-25 DE DES71415A patent/DE1128413B/de active Pending
1961
- 1961-06-20 CH CH721561A patent/CH395554A/de unknown
- 1961-07-10 NL NL266876D patent/NL266876A/xx unknown
- 1961-07-10 NL NL61266876A patent/NL139006B/xx unknown
- 1961-08-18 GB GB29981/61A patent/GB926497A/en not_active Expired
- 1961-11-22 BE BE610603A patent/BE610603A/fr unknown
- 1961-11-24 US US157033A patent/US3175891A/en not_active Expired - Lifetime
- 1961-11-25 SE SE11762/61A patent/SE306303B/xx unknown

Also Published As

Publication number	Publication date
BE610603A (fr)	1962-05-22
NL266876A (de)
SE306303B (de)	1968-11-25
GB926487A (en)	1963-05-22
DE1128413B (de)	1962-04-26
US3175891A (en)	1965-03-30
GB926497A (en)	1963-05-22
NL139006B (nl)	1973-06-15

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