CH426742A - Verfahren zum Herstellen von einkristallinem Silizium - Google Patents
Verfahren zum Herstellen von einkristallinem SiliziumInfo
- Publication number
- CH426742A CH426742A CH30561A CH30561A CH426742A CH 426742 A CH426742 A CH 426742A CH 30561 A CH30561 A CH 30561A CH 30561 A CH30561 A CH 30561A CH 426742 A CH426742 A CH 426742A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- single crystal
- crystal silicon
- silicon
- crystal
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES66651A DE1124028B (de) | 1960-01-15 | 1960-01-15 | Verfahren zum Herstellen von einkristallinem Silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH426742A true CH426742A (de) | 1966-12-31 |
Family
ID=7498973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH30561A CH426742A (de) | 1960-01-15 | 1961-01-10 | Verfahren zum Herstellen von einkristallinem Silizium |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3239372A (de) |
| CH (1) | CH426742A (de) |
| GB (2) | GB926807A (de) |
| NL (3) | NL271203A (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3330251A (en) * | 1955-11-02 | 1967-07-11 | Siemens Ag | Apparatus for producing highest-purity silicon for electric semiconductor devices |
| DE1444526B2 (de) * | 1962-08-24 | 1971-02-04 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zum Abscheiden eines halb leitenden Elements |
| US3862020A (en) * | 1970-12-07 | 1975-01-21 | Dow Corning | Production method for polycrystalline semiconductor bodies |
| US4549926A (en) * | 1982-01-12 | 1985-10-29 | Rca Corporation | Method for growing monocrystalline silicon on a mask layer |
| IN157312B (de) * | 1982-01-12 | 1986-03-01 | Rca Corp | |
| US4482422A (en) * | 1982-02-26 | 1984-11-13 | Rca Corporation | Method for growing a low defect monocrystalline layer on a mask |
| US4578142A (en) * | 1984-05-10 | 1986-03-25 | Rca Corporation | Method for growing monocrystalline silicon through mask layer |
| US4592792A (en) * | 1985-01-23 | 1986-06-03 | Rca Corporation | Method for forming uniformly thick selective epitaxial silicon |
| US4698316A (en) * | 1985-01-23 | 1987-10-06 | Rca Corporation | Method of depositing uniformly thick selective epitaxial silicon |
| JP2651146B2 (ja) * | 1987-03-02 | 1997-09-10 | キヤノン株式会社 | 結晶の製造方法 |
| ES2331283B1 (es) * | 2008-06-25 | 2010-10-05 | Centro De Tecnologia Del Silicio Solar, S.L. (Centsil) | Reactor de deposito de silicio de gran pureza para aplicaciones fotovoltaicas. |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1025845B (de) * | 1955-07-29 | 1958-03-13 | Wacker Chemie Gmbh | Verfahren zur Herstellung von reinstem Silicium |
| DE1054436B (de) * | 1956-02-11 | 1959-04-09 | Pechiney Prod Chimiques Sa | Verfahren zur Herstellung von kompaktem Silicium hohen Reinheitsgrades |
-
0
- NL NL260072D patent/NL260072A/xx unknown
- NL NL131048D patent/NL131048C/xx active
- NL NL271203D patent/NL271203A/xx unknown
-
1961
- 1961-01-09 US US81607A patent/US3239372A/en not_active Expired - Lifetime
- 1961-01-10 CH CH30561A patent/CH426742A/de unknown
- 1961-01-13 GB GB1517/61A patent/GB926807A/en not_active Expired
-
1963
- 1963-08-08 GB GB31276/63A patent/GB1016578A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB926807A (en) | 1963-05-22 |
| NL260072A (de) | |
| GB1016578A (en) | 1966-01-12 |
| NL131048C (de) | |
| US3239372A (en) | 1966-03-08 |
| NL271203A (de) |
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