CH381327A - Unipolartransistor und Verfahren zur Herstellung desselben - Google Patents
Unipolartransistor und Verfahren zur Herstellung desselbenInfo
- Publication number
- CH381327A CH381327A CH55660A CH55660A CH381327A CH 381327 A CH381327 A CH 381327A CH 55660 A CH55660 A CH 55660A CH 55660 A CH55660 A CH 55660A CH 381327 A CH381327 A CH 381327A
- Authority
- CH
- Switzerland
- Prior art keywords
- making
- same
- unipolar transistor
- unipolar
- transistor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/919—Compensation doping
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thyristors (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES61490A DE1133474B (de) | 1959-01-27 | 1959-01-27 | Unipolartransistor mit zwei Steuerzonen |
US855171A US3152294A (en) | 1959-01-27 | 1959-11-24 | Unipolar diffusion transistor |
US395450A US3380154A (en) | 1959-01-27 | 1964-09-10 | Unipolar diffusion transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
CH381327A true CH381327A (de) | 1964-08-31 |
Family
ID=27212650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH55660A CH381327A (de) | 1959-01-27 | 1960-01-19 | Unipolartransistor und Verfahren zur Herstellung desselben |
Country Status (8)
Country | Link |
---|---|
US (1) | US3380154A (de) |
BE (1) | BE587009A (de) |
CH (1) | CH381327A (de) |
DE (1) | DE1133474B (de) |
FR (1) | FR1242770A (de) |
GB (1) | GB896730A (de) |
NL (1) | NL246032A (de) |
SE (1) | SE300849B (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7354052B2 (en) * | 2004-03-02 | 2008-04-08 | Honda Motor Co., Ltd. | Suspension device |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA272437A (en) * | 1925-10-22 | 1927-07-19 | Edgar Lilienfeld Julius | Electric current control mechanism |
US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
DE1015153B (de) * | 1951-08-24 | 1957-09-05 | Western Electric Co | Halbleiter-Verstaerker mit einem Koerper aus Einkristall-Halbleitermaterial |
DE966276C (de) * | 1953-03-01 | 1957-07-18 | Siemens Ag | Halbleiteranordnung mit wenigstens zwei Steuerelektroden oder Steuerelektrodengruppenfuer elektronische Abtast- oder Schaltanordnungen |
NL202404A (de) * | 1955-02-18 | |||
BE547274A (de) * | 1955-06-20 | |||
BE555318A (de) * | 1956-03-07 | |||
US2814853A (en) * | 1956-06-14 | 1957-12-03 | Power Equipment Company | Manufacturing transistors |
AT202600B (de) * | 1956-12-13 | 1959-03-10 | Philips Nv | Feldeffekt-Transistor und Verfahren zur Herstellung eines solchen Transistors |
US2967985A (en) * | 1957-04-11 | 1961-01-10 | Shockley | Transistor structure |
US3010033A (en) * | 1958-01-02 | 1961-11-21 | Clevite Corp | Field effect transistor |
US2952896A (en) * | 1958-04-11 | 1960-09-20 | Texas Instruments Inc | Fabrication techniques for transistors |
US3041213A (en) * | 1958-11-17 | 1962-06-26 | Texas Instruments Inc | Diffused junction semiconductor device and method of making |
US3148284A (en) * | 1959-01-30 | 1964-09-08 | Zenith Radio Corp | Semi-conductor apparatus with field-biasing means |
-
0
- NL NL246032D patent/NL246032A/xx unknown
-
1959
- 1959-01-27 DE DES61490A patent/DE1133474B/de active Pending
- 1959-12-17 FR FR813341A patent/FR1242770A/fr not_active Expired
-
1960
- 1960-01-19 CH CH55660A patent/CH381327A/de unknown
- 1960-01-21 GB GB2299/60A patent/GB896730A/en not_active Expired
- 1960-01-27 SE SE802/60A patent/SE300849B/xx unknown
- 1960-01-27 BE BE587009A patent/BE587009A/fr unknown
-
1964
- 1964-09-10 US US395450A patent/US3380154A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US3380154A (en) | 1968-04-30 |
NL246032A (de) | |
BE587009A (fr) | 1960-05-16 |
DE1133474B (de) | 1962-07-19 |
GB896730A (en) | 1962-05-16 |
FR1242770A (fr) | 1960-09-30 |
SE300849B (de) | 1968-05-13 |
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