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CH379001A - Halbleiteranordnung, insbesondere Transistor, mit einem einkristallinen Grundkörper - Google Patents

Halbleiteranordnung, insbesondere Transistor, mit einem einkristallinen Grundkörper

Info

Publication number
CH379001A
CH379001A CH948460A CH948460A CH379001A CH 379001 A CH379001 A CH 379001A CH 948460 A CH948460 A CH 948460A CH 948460 A CH948460 A CH 948460A CH 379001 A CH379001 A CH 379001A
Authority
CH
Switzerland
Prior art keywords
base body
semiconductor arrangement
crystal base
particular transistor
transistor
Prior art date
Application number
CH948460A
Other languages
English (en)
Inventor
Nagorsen Hans
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH379001A publication Critical patent/CH379001A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1203Rectifying Diode
    • H01L2924/12036PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
CH948460A 1959-09-23 1960-08-22 Halbleiteranordnung, insbesondere Transistor, mit einem einkristallinen Grundkörper CH379001A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES65067A DE1104618B (de) 1959-09-23 1959-09-23 Halbleiteranordnung mit einkristallinem Grundkoerper mit mindestens einem pn-UEbergang und mit mehreren Elektroden

Publications (1)

Publication Number Publication Date
CH379001A true CH379001A (de) 1964-06-30

Family

ID=7497729

Family Applications (1)

Application Number Title Priority Date Filing Date
CH948460A CH379001A (de) 1959-09-23 1960-08-22 Halbleiteranordnung, insbesondere Transistor, mit einem einkristallinen Grundkörper

Country Status (2)

Country Link
CH (1) CH379001A (de)
DE (1) DE1104618B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287610A (en) * 1965-03-30 1966-11-22 Bendix Corp Compatible package and transistor for high frequency operation "compact"

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778173A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device and manufacture thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB807582A (en) * 1954-12-27 1959-01-21 Clevite Corp High power junction transistor
DE1784806U (de) * 1957-11-02 1959-03-12 Siemens Ag Gasdichtes gehaeuse fuer elektrische halbleiteranordnung mit einkristallinem grundkoerper.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3287610A (en) * 1965-03-30 1966-11-22 Bendix Corp Compatible package and transistor for high frequency operation "compact"

Also Published As

Publication number Publication date
DE1104618B (de) 1961-04-13

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