CH379001A - Halbleiteranordnung, insbesondere Transistor, mit einem einkristallinen Grundkörper - Google Patents
Halbleiteranordnung, insbesondere Transistor, mit einem einkristallinen GrundkörperInfo
- Publication number
- CH379001A CH379001A CH948460A CH948460A CH379001A CH 379001 A CH379001 A CH 379001A CH 948460 A CH948460 A CH 948460A CH 948460 A CH948460 A CH 948460A CH 379001 A CH379001 A CH 379001A
- Authority
- CH
- Switzerland
- Prior art keywords
- base body
- semiconductor arrangement
- crystal base
- particular transistor
- transistor
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES65067A DE1104618B (de) | 1959-09-23 | 1959-09-23 | Halbleiteranordnung mit einkristallinem Grundkoerper mit mindestens einem pn-UEbergang und mit mehreren Elektroden |
Publications (1)
Publication Number | Publication Date |
---|---|
CH379001A true CH379001A (de) | 1964-06-30 |
Family
ID=7497729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH948460A CH379001A (de) | 1959-09-23 | 1960-08-22 | Halbleiteranordnung, insbesondere Transistor, mit einem einkristallinen Grundkörper |
Country Status (2)
Country | Link |
---|---|
CH (1) | CH379001A (de) |
DE (1) | DE1104618B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3287610A (en) * | 1965-03-30 | 1966-11-22 | Bendix Corp | Compatible package and transistor for high frequency operation "compact" |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5778173A (en) * | 1980-11-04 | 1982-05-15 | Hitachi Ltd | Semiconductor device and manufacture thereof |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB807582A (en) * | 1954-12-27 | 1959-01-21 | Clevite Corp | High power junction transistor |
DE1784806U (de) * | 1957-11-02 | 1959-03-12 | Siemens Ag | Gasdichtes gehaeuse fuer elektrische halbleiteranordnung mit einkristallinem grundkoerper. |
-
1959
- 1959-09-23 DE DES65067A patent/DE1104618B/de active Pending
-
1960
- 1960-08-22 CH CH948460A patent/CH379001A/de unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3287610A (en) * | 1965-03-30 | 1966-11-22 | Bendix Corp | Compatible package and transistor for high frequency operation "compact" |
Also Published As
Publication number | Publication date |
---|---|
DE1104618B (de) | 1961-04-13 |
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