CH357470A - Verfahren zur Herstellung von Halbleitervorrichtungen - Google Patents
Verfahren zur Herstellung von HalbleitervorrichtungenInfo
- Publication number
- CH357470A CH357470A CH357470DA CH357470A CH 357470 A CH357470 A CH 357470A CH 357470D A CH357470D A CH 357470DA CH 357470 A CH357470 A CH 357470A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor devices
- manufacturing semiconductor
- manufacturing
- devices
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2711156A GB801442A (en) | 1956-09-05 | 1956-09-05 | Improvements in or relating to semi-conductor devices |
GB26120/58A GB891934A (en) | 1958-08-14 | 1958-08-14 | Improvements in or relating to semi-conductor devices |
GB40175/58A GB907942A (en) | 1958-12-12 | 1958-12-12 | Improvements in or relating to transistors |
GB1262761A GB909377A (en) | 1961-04-07 | 1961-04-07 | Improvements in or relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
CH357470A true CH357470A (de) | 1961-10-15 |
Family
ID=27448152
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH357470D CH357470A (de) | 1956-09-05 | 1957-09-05 | Verfahren zur Herstellung von Halbleitervorrichtungen |
CH8166259A CH377449A (de) | 1956-09-05 | 1959-12-10 | Transistor |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH8166259A CH377449A (de) | 1956-09-05 | 1959-12-10 | Transistor |
Country Status (6)
Country | Link |
---|---|
US (2) | US2939205A (de) |
BE (1) | BE560551A (de) |
CH (2) | CH357470A (de) |
DE (1) | DE1158179B (de) |
FR (1) | FR1189146A (de) |
NL (1) | NL276978A (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3176376A (en) * | 1958-04-24 | 1965-04-06 | Motorola Inc | Method of making semiconductor device |
US3095622A (en) * | 1958-06-11 | 1963-07-02 | Clevite Corp | Apparatus for manufacture of alloyed semiconductor devices |
US3073006A (en) * | 1958-09-16 | 1963-01-15 | Westinghouse Electric Corp | Method and apparatus for the fabrication of alloyed transistors |
NL249576A (de) * | 1959-03-18 | |||
US3186046A (en) * | 1959-06-10 | 1965-06-01 | Clevite Corp | Apparatus for the preparation of alloy contacts |
CH376187A (de) * | 1959-10-13 | 1964-03-31 | Transistor Ag | Verfahren zur Herstellung eines Halbleiter-Schaltelementes |
US3150013A (en) * | 1960-02-17 | 1964-09-22 | Gen Motors Corp | Means and method for fabricating semiconductor devices |
DE1132660B (de) * | 1960-07-06 | 1962-07-05 | Intermetall | Legierungsvorrichtung zum Herstellen von Halbleiteranordnungen durch gleich-zeitiges Anlegieren von Elektroden an einander gegenueberliegenden Flaechen eines Halbleiterplaettchens |
DE1464669B1 (de) * | 1961-03-06 | 1971-02-04 | Itt Ind Gmbh Deutsche | Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet |
NL278601A (de) * | 1961-05-25 | |||
US3210225A (en) * | 1961-08-18 | 1965-10-05 | Texas Instruments Inc | Method of making transistor |
US3253098A (en) * | 1963-10-24 | 1966-05-24 | Allis Chalmers Mfg Co | Mechanical actuator with permanent magnet |
US3409482A (en) * | 1964-12-30 | 1968-11-05 | Sprague Electric Co | Method of making a transistor with a very thin diffused base and an epitaxially grown emitter |
US3538401A (en) * | 1968-04-11 | 1970-11-03 | Westinghouse Electric Corp | Drift field thyristor |
US3619736A (en) * | 1970-06-22 | 1971-11-09 | Mitsumi Electric Co Ltd | Alloy junction transistor and a method of making the same |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE500302A (de) * | 1949-11-30 | |||
GB688866A (en) * | 1950-10-19 | 1953-03-18 | Gen Electric Co Ltd | Improvements in or relating to crystal rectifiers |
GB697869A (en) * | 1951-05-11 | 1953-09-30 | Post Office | Improvements in or relating to methods of mounting piezo-electric elements |
US2758261A (en) * | 1952-06-02 | 1956-08-07 | Rca Corp | Protection of semiconductor devices |
US2756483A (en) * | 1953-05-11 | 1956-07-31 | Sylvania Electric Prod | Junction forming crucible |
US2811653A (en) * | 1953-05-22 | 1957-10-29 | Rca Corp | Semiconductor devices |
DE1036393B (de) * | 1954-08-05 | 1958-08-14 | Siemens Ag | Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren |
US2895058A (en) * | 1954-09-23 | 1959-07-14 | Rca Corp | Semiconductor devices and systems |
NL204361A (de) * | 1955-04-22 | 1900-01-01 | ||
US2796563A (en) * | 1955-06-10 | 1957-06-18 | Bell Telephone Labor Inc | Semiconductive devices |
US2777101A (en) * | 1955-08-01 | 1957-01-08 | Cohen Jerrold | Junction transistor |
NL121810C (de) * | 1955-11-04 | |||
BE555318A (de) * | 1956-03-07 | |||
GB800296A (en) * | 1956-11-19 | 1958-08-20 | Texas Instruments Inc | Manufacture of junction-containing silicon crystals |
US2953488A (en) * | 1958-12-26 | 1960-09-20 | Shockley William | P-n junction having minimum transition layer capacitance |
US2937324A (en) * | 1959-02-05 | 1960-05-17 | Westinghouse Electric Corp | Silicon carbide rectifier |
-
0
- BE BE560551D patent/BE560551A/xx unknown
- NL NL276978D patent/NL276978A/xx unknown
-
1957
- 1957-08-29 US US681045A patent/US2939205A/en not_active Expired - Lifetime
- 1957-09-03 FR FR1189146D patent/FR1189146A/fr not_active Expired
- 1957-09-05 CH CH357470D patent/CH357470A/de unknown
-
1959
- 1959-12-04 DE DEI17331A patent/DE1158179B/de active Pending
- 1959-12-07 US US857983A patent/US3040219A/en not_active Expired - Lifetime
- 1959-12-10 CH CH8166259A patent/CH377449A/de unknown
Also Published As
Publication number | Publication date |
---|---|
US2939205A (en) | 1960-06-07 |
US3040219A (en) | 1962-06-19 |
CH377449A (de) | 1964-05-15 |
NL276978A (de) | |
DE1158179B (de) | 1963-11-28 |
FR1189146A (fr) | 1959-09-29 |
BE560551A (de) |
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