CH263777A - Verfahren zur Herstellung eines halbleitenden Materials für Kristallgleichrichter. - Google Patents
Verfahren zur Herstellung eines halbleitenden Materials für Kristallgleichrichter.Info
- Publication number
- CH263777A CH263777A CH263777DA CH263777A CH 263777 A CH263777 A CH 263777A CH 263777D A CH263777D A CH 263777DA CH 263777 A CH263777 A CH 263777A
- Authority
- CH
- Switzerland
- Prior art keywords
- production
- semiconducting material
- crystal rectifiers
- rectifiers
- crystal
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S420/00—Alloys or metallic compositions
- Y10S420/903—Semiconductive
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Contacts (AREA)
- Conductive Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB16431/41A GB577976A (en) | 1941-12-19 | 1941-12-19 | Improvements in the manufacture of silicon material for crystal contacts |
Publications (1)
Publication Number | Publication Date |
---|---|
CH263777A true CH263777A (de) | 1949-09-15 |
Family
ID=10077194
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH263777D CH263777A (de) | 1941-12-19 | 1946-08-21 | Verfahren zur Herstellung eines halbleitenden Materials für Kristallgleichrichter. |
Country Status (6)
Country | Link |
---|---|
US (1) | US2428992A (de) |
BE (1) | BE466804A (de) |
CH (1) | CH263777A (de) |
FR (1) | FR927777A (de) |
GB (1) | GB577976A (de) |
NL (1) | NL67322C (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1012696B (de) * | 1954-07-06 | 1957-07-25 | Siemens Ag | Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE503719A (de) * | 1950-06-15 | |||
NL178757B (nl) * | 1952-06-02 | British Steel Corp | Werkwijze en inrichting voor het continu produceren van een metaalstrook uit metaalpoeder. | |
BE531626A (de) * | 1953-09-04 | |||
US3010857A (en) * | 1954-03-01 | 1961-11-28 | Rca Corp | Semi-conductor devices and methods of making same |
US2859141A (en) * | 1954-04-30 | 1958-11-04 | Raytheon Mfg Co | Method for making a semiconductor junction |
US2957788A (en) * | 1955-02-08 | 1960-10-25 | Rca Corp | Alloy junction type semiconductor devices and methods of making them |
GB794128A (en) * | 1955-08-04 | 1958-04-30 | Gen Electric Co Ltd | Improvements in or relating to methods of forming a junction in a semiconductor |
US3097068A (en) * | 1959-05-29 | 1963-07-09 | Union Carbide Corp | Crystallization of pure silicon platelets |
NL260152A (de) * | 1960-01-18 |
-
0
- BE BE466804D patent/BE466804A/xx unknown
- NL NL67322D patent/NL67322C/xx active
-
1941
- 1941-12-19 GB GB16431/41A patent/GB577976A/en not_active Expired
-
1942
- 1942-12-10 US US468577A patent/US2428992A/en not_active Expired - Lifetime
-
1946
- 1946-06-11 FR FR927777D patent/FR927777A/fr not_active Expired
- 1946-08-21 CH CH263777D patent/CH263777A/de unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1012696B (de) * | 1954-07-06 | 1957-07-25 | Siemens Ag | Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges |
Also Published As
Publication number | Publication date |
---|---|
US2428992A (en) | 1947-10-14 |
FR927777A (fr) | 1947-11-10 |
GB577976A (en) | 1946-06-11 |
NL67322C (de) | |
BE466804A (de) |
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